KR20160054171A - Method for fabricating gating hysteresis-free carbon nanotube sensor - Google Patents

Method for fabricating gating hysteresis-free carbon nanotube sensor Download PDF

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KR20160054171A
KR20160054171A KR1020140153385A KR20140153385A KR20160054171A KR 20160054171 A KR20160054171 A KR 20160054171A KR 1020140153385 A KR1020140153385 A KR 1020140153385A KR 20140153385 A KR20140153385 A KR 20140153385A KR 20160054171 A KR20160054171 A KR 20160054171A
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electrodes
insulating film
carbon nanotube
ots
swcnt
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KR1020140153385A
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Korean (ko)
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KR101646081B1 (en
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변영태
김선호
전영민
이제행
김재성
박민철
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한국과학기술연구원
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Priority to PCT/KR2015/000196 priority patent/WO2016072557A1/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
    • G01N27/3275—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction
    • G01N27/3278—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction involving nanosized elements, e.g. nanogaps or nanoparticles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02606—Nanotubes

Abstract

(B) forming a plurality of electrodes on the insulating film; (c) forming an OTS film on the insulating film; and (d) depositing a carbon film on the electrodes. The method includes the steps of: A method for manufacturing a carbon nanotube sensor, comprising the step of adsorbing nanotube particles.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a manufacturing method of a gantry hysteresis free carbon nanotube sensor,

The present invention relates to a semiconductor nanosensor using carbon nanotubes, and more particularly, to a method of manufacturing a carbon nanotube sensor capable of removing gating hysteresis by an economical method while improving the performance of a sensor.

Carbon nanotubes (CNTs) are known to have a current density of 1000 times that of copper and carrier mobility of 10 times that of silicon. Therefore, it is widely used as a material for a high-sensitivity / high-speed electronic device. In particular, since the semiconducting properties of carbon nanotubes have been reported in 1998, carbon nanotube-based field effect transistor (FET) devices have been prepared and are now being applied to field effect transistor devices. In addition, a highly sensitive chemical / biosensor can be fabricated using the change in electrical conductivity due to the interaction between the detection material and the carbon nanotubes. Unlike conventional solid state sensors, carbon nanotube sensors operate at room temperature and have a sensitivity more than 1000 times higher than solid state sensors. Because carbon nanotube-based sensors are nanoscale, they can greatly reduce the size of chemical sensors and can greatly improve chemical reactivity.

1 is a graph for explaining electrical characteristics of a single-walled carbon nanotube (SWCNT) device according to the prior art. The characteristics of such conventional SWCNT devices are disclosed in " Simple Assembling Techniques of Single-Walled Carbon Nanotubes Using Only Photolithography " in " Journal of the Korean Physical Society, Vol. .

Referring to FIG. 1, the gating effect of a bottom-gate transistor is shown when the source-drain voltage V SD is 0.1V, 0.3V, and 0.5V, respectively. In Fig. 1, the transistor exhibits typical p-type characteristics, i.e., the sode-drain current increases at negative gate voltages and no source-drain current flows at positive gate voltages. In Fig. 1, the source-drain current (I SD ) was measured at 12 to 75 nA when V SD = 0.1V to 0.5V.

In a typical p-type FET device, current flows at a negative gate voltage, whereas when the gate voltage is greater than 0 V, no current flows. However, in the transistor of FIG. 1, the gate voltage at which the current becomes minimum when the source-drain voltage V SD is 0.1 V, 0.3 V, and 0.5 V, respectively, is about -2 V instead of 0 V. This phenomenon means that the charge induced by the applied gate voltage does not contribute 100% to the current, so there is a loss of charge.

The cause of the above problem is described in a paper entitled " Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect Transistors "in" NANO LETTERS, Vol. 3, No. 2, 193-198 " That is, CNT FETs exhibit hysteresis in electrical properties because water molecules around the CNTs (including water constrained to the surface of SiO 2 near CNTs) charge trapping. This hysteresis lasts even in vacuum because the water constrained to the SiO 2 surface does not completely fall in vacuum at room temperature. FIG. 2A is a graph showing a hysteresis of a conventional CNT FET in ambient air, and FIG. 2B is a graph showing hysteresis after a CNT FET according to FIG. 2A is pumped in vacuum. Referring to FIGS. 2A and 2B, it can be seen that the hysteresis appearing in the ambient air is significantly reduced in the high vacuum (10 -7 Torr), but does not completely disappear after four days.

However, when heating is performed under a dry condition, since a large amount of water is removed, the hysteresis of the FET can be reduced. In particular, it is known that a transistor with little hysteresis can be obtained by protecting the device with a polymer film in which hydrogen is bonded to a sianol group on SiO 2 . FIG. 4 shows that the PMMA-coated SWCNT FET exhibits almost zero hysteresis in the ambient air. However, in this case, there is a problem that the operation characteristic as a sensor is generally lost.

FIGS. 3A and 3B show the characteristics of a SiO 2 etched FET under the SWCNT to remove water molecules bound to the SiO 2 surface. FIG. In FIGS. 3A and 3B, the lifting height of the CNT is about 2 .mu.m. Referring to FIG. 3A, hysteresis is shown when the floated SWCNT FET is in the ambient air, whereas hysteresis disappears in vacuum as shown in FIG. 3B. That is, when the floating SWCNT FET is in vacuum, the hysteresis completely disappears, the current Ids becomes 0 at a gate voltage of 0 V or more, and the current Ids increases at a negative gate voltage. Show.

However, in FIGS. 3A and 3B, the SiO 2 etched FET under the SWCNT has a low efficiency due to a 2 μm air gap. That is, a gate voltage of about 4 times as much as that of the CNT FET of FIGS.

As described above, effective methods for eliminating hysteresis are (1) a method of putting a floated SWCNT FET in a vacuum, and (2) a method of coating CNT with PMMA in the ambient air. However, both of these methods for completely eliminating hysteresis are not suitable for sensing. That is, the former is not suitable for a sensor which is required to have a miniaturization, a low power consumption and a low price because a high vacuum system is required, and the latter is difficult to further circuit integration and is not suitable for applications such as sensing.

Therefore, in a paper titled "High-performance, hysteresis-free carbon nanotube field-effect transistors via directed assembly" in 2006, "APPLIED PHYSICS LETTERS", the device is operated without gating hysteresis while the SWCNT surface is exposed to ambient air. Lt; / RTI > In order to reduce the number of nanotubes assembled on the Au electrode, the SWCNT-FETs are fabricated by dipping the OTS (octadecyltrichlorosilane) thin film and the SWCNT after printing an ODT (octadecanethiol) pattern and lift- The ODT on the Au electrode is removed by annealing. As a result, the gating hysteresis is removed, but the following problems are exposed.

First, in the above process, even if the SWCNT is self-assembled in an area where there is no ODT in the entire area of the Au electrode, there is a problem that a large amount of SWCNT sticks to the entire surface of the large electrode. Since the SWCNT is expensive, this method is not preferable from an economic point of view.

Secondly, according to Fig. 1 (c), it is difficult to say that the high-quality OTS thin film is grown because the SWCNT penetrates the OTS region between the source and drain electrodes. The width of the Au electrode should be reduced to 1-2 μm and the OTS width, which is the gap between the electrodes, should be much larger than the SWCNT length, so that the SWCNTs in the lateral direction are not assembled to neighboring Au patterns beyond the OTS region. That is, it should be 5 μm or more.

Thirdly, annealing at 150-170 ° C for 12 hours to remove the ODT pattern formed on the Au electrode after the SWCNT is assembled is not preferable in view of the time required for the fabrication process.

It is an object of the present invention to provide a method of manufacturing a carbon nanotube sensor capable of removing gating hysteresis by an economical and simple method while improving the performance of a sensor.

(B) forming a plurality of electrodes on the insulating film; (c) forming an OTS film on the insulating film; and (c) forming an insulating film on the insulating film. and d) adsorbing carbon nanotube particles on the electrodes.

At this time, the insulating film is preferably an oxide film.

Particularly, the step (b) preferably includes a step of forming a mask pattern in accordance with a region where an electrode is to be formed on the insulating film, a step of stacking electrodes over the entire surface of the substrate, and a step of lifting off the region where the mask pattern is formed . In the step (b), it is preferable that the plurality of electrodes are arranged in parallel with the rectangular source and drain electrodes having a length greater than the width, and a channel is formed between the source electrode and the drain electrode.

In the step (c), it is preferable that the OTS thin film is formed on the surface of the insulating film by immersing the entire substrate in the OTS solution.

In step (d), the substrate is immersed in a solution in which single-walled carbon nanotubes (SWCNTs) are dispersed so that carbon nanotubes are adsorbed on the OTS film in a floating channel between the electrodes, It is preferable that the carbon nanotubes longer than the length are adsorbed in the floating form.

In addition, after step (d), forming the electrode pad connecting the plurality of electrodes may be further included.

As described above, according to the present invention, since the source electrode and the drain electrode are passivated to the OTS and the SWCNT is suspended thereon, the gating hysteresis of the carbon nanotube sensor can be effectively removed have.

In addition, since the SWCNT is floating on the OTS layer, the carbon nanotube sensor manufactured by the manufacturing method according to the present invention has an advantage that the surface area of the CNT that can react with the material increases, thereby improving the sensitivity of the sensor.

Further, in the carbon nanotube sensor manufactured by the manufacturing method according to the present invention, because the SWCNT channel is formed by adsorbing the SWCNT longer than the channel length on the source electrode and the drain electrode, the resistance is reduced and the signal So that the noise of the display device is also reduced.

FIG. 1 is a graph for explaining electrical characteristics of a conventional single-walled carbon nanotube device,
FIG. 2A is a graph showing the hysteresis of the conventional CNT FET in the ambient air, FIG. 2B is a graph showing the hysteresis after the CNT FET is pumped in vacuum according to FIG.
FIGS. 3A and 3B are graphs showing characteristics of a SiO 2 etched FET under a SWCNT to remove water molecules bound to the SiO 2 surface according to the prior art,
Figure 4 is a graph showing that prior art PMMA coated SWCNT FETs exhibit near zero hysteresis in ambient air,
5A to 5F are a plan view and a sectional view for explaining a method of manufacturing a carbon nanotube sensor for removing gating hysteresis according to a preferred embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it should be understood that the following embodiments are provided so that those skilled in the art will be able to fully understand the present invention, and that various modifications may be made without departing from the scope of the present invention. It is not.

5A to 5F illustrate a method of manufacturing a carbon nanotube sensor for eliminating gating hysteresis according to a preferred embodiment of the present invention. 5A to 5F, a left side view is a plan view of each step of the carbon nanotube sensor, and each right side view is a sectional view of the carbon nanotube sensor according to a process step.

First, an insulating film 110 is formed on a substrate 100. The substrate 100 may be a silicon (Si) wafer. The insulating film 110 is preferably an oxide film. For forming the oxide film, a SiO 2 thin film may be deposited on the substrate using PECVD or LPCVD, or may be spin coated using SOG (silica-glass). Alternatively, a 300 nm thermal oxide (SiO 2 ) can be grown on a silicon (Si) substrate using a wet thermal furnace at 1050 ° C.

Next, a plurality of electrodes 130 for a carbon nanotube sensor are formed on the insulating film 110. A plurality of electrodes for a carbon nanotube sensor are arranged in parallel in a rectangular shape with a narrow width and a long length, as shown in Figs. 5B and 5C. Preferably, one of the long electrodes is a source electrode and the other is a drain electrode, and a channel is formed between the source electrode and the drain electrode. The width and length of such an electrode pattern can be 1-2 占 퐉 and several tens 占 퐉, respectively.

For forming a plurality of electrodes on the insulating film, a photolithography process may be used, as shown in Figs. 5A to 5C. For example, referring to FIG. 5A, a mask pattern 120 is formed on an insulating film 110 in accordance with an area where an electrode is to be formed. The mask pattern 120 may be a photoresist. 5B, electrodes are stacked over the entire surface of the substrate. For example, PVD or CVD may be used for stacking the electrodes, and Au or the like may be used as the electrode. Then, as shown in FIG. 5C, only the electrode pattern 130 can be left by lifting off the region where the mask pattern is formed.

In the subsequent step, the SWCNT is adsorbed on the electrode pattern. Since the width and the length of the electrode pattern are preferably 1-2 占 퐉 and several 占 퐉, respectively, the SWCNT adsorption area is as small as several tens 占 퐉 2 compared with the prior art. Therefore, in the preferred embodiment of the present invention, when the number of electrode patterns is 10 or less, the amount of SWCNT adsorbed is less than in the prior art, thereby ensuring economical efficiency.

Next, the OTS film 140 is formed on the insulating film 110. The OTS film may be formed by immersing the entire substrate in an electrically neutral OTS (octadecyltrichlorosilane) solution so that the OTS thin film 110 is formed on the surface of the insulating film. The OTS is formed on the insulating film 110 over the entire area of the substrate except for the electrode 130 as shown in FIG. When the OTS film is formed on the insulating film, the water is moved away from the surface of the insulating film and plays a large role in eliminating gating hysteresis due to water.

Next, the carbon nanotube particles 150 are adsorbed on the electrode 130. The method for adsorbing the carbon nanotube particles 150 can be performed by immersing the substrate in a solution in which single wall carbon nanotubes (SWCNTs) are dispersed in dichlorobenzene for a predetermined time to adsorb the SWCNT on the surface of the electrode 130 Method can be used. Since the OTS film 140 is formed on the insulating film 110, the carbon nanotube particles are not adsorbed on the OTS film even if the substrate is entirely immersed in the solution in which the carbon nanotubes (SWCNTs) are dispersed. 5E shows that the carbon nanotubes 150 are adsorbed on the channel between the source electrode and the drain electrode.

Next, an electrode pad connecting the plurality of electrodes is formed. As shown in FIG. 5F, the electrode pad may be formed of a pad connecting a plurality of source electrodes and a pad connecting a plurality of drain electrodes. In the case of forming an electrode, a PVD or CVD process may be performed using Au or the like. .

In the carbon nanotube sensor according to the preferred embodiment of the present invention having channels between such electrodes, since the multiple channels are in a parallel structure, a signal amplification effect is exhibited and a large current signal can be obtained. Since the micrometer-sized multi-channel electrode is connected to the macro-sized electrode pad, it has an advantage that it is easy to apply the electric signal from the outside and measure the current change.

When the carbon nanotube sensor is manufactured as described above, gating hysteresis can be removed.

Specifically, in the carbon nanotube sensor manufactured by the manufacturing method according to the present invention, the source electrode and the drain electrode are passivated to the OTS, and then the SWCNT is suspended thereon. As described in the prior art, water molecules on or near the CNT are the primary cause of the charge trap. However, since it is known that the OTS layer coated on the SiO 2 insulating film effectively removes the hysteresis by the water molecules adsorbed on the CNTs, the gating hysteresis in the carbon nanotube sensor manufactured by the manufacturing method according to the present invention Can be effectively removed.

In addition, since the SWCNT is floating on the OTS layer, the carbon nanotube sensor manufactured by the method of the present invention increases the surface area of the CNT that can react with the material, compared with the conventional structure in which the CNT is attached on the SiO 2 . Therefore, there is an advantage that the sensitivity of the sensor is improved.

In the carbon nanotube sensor manufactured by the manufacturing method according to the present invention, the SWCNT channel has a channel length shorter than that of the conventional network type SWCNT channel because the SWCNT channel is formed by adsorbing the SWCNT on the source electrode and the drain electrode. Loses. Therefore, the resistance is reduced and the signal noise is reduced as compared with the conventional SWCNT network structure.

Moreover, since the ODT line is not used in comparison with the prior art, a 12-hour annealing process is not required. Therefore, the manufacturing process time can be shortened compared with the conventional technique.

100: substrate 110: insulating film
120: photoresist 130: electrode
140: OTS 150: CNT

Claims (8)

(a) forming an insulating film on a substrate;
(b) forming a plurality of electrodes on the insulating film;
(c) forming an OTS film on the insulating film; And
(d) adsorbing the carbon nanotube particles on the electrodes.
The method according to claim 1,
Wherein the insulating film is an oxide film.
The method of claim 1, wherein the step (b)
Forming a mask pattern on the insulating film in accordance with an area where the electrodes are to be formed;
Stacking electrodes over the entire surface of the substrate;
And lifting off the region where the mask pattern is formed.
The method of claim 1, wherein, in step (b)
Wherein the plurality of electrodes are arranged in parallel in a rectangular shape having a longer length than the width, and a channel is formed between the source electrode and the drain electrode.
The method of claim 1, wherein the step (c)
Wherein the OTS thin film is formed on the surface of the insulating film by immersing the entire substrate in the OTS solution.
The method of claim 1, wherein the step (d)
Wherein the substrate is immersed in a solution in which a single wall carbon nanotube (SWCNT) is dispersed so that carbon nanotubes are adsorbed on the OTS film in a floating channel in a channel between the electrodes.
The method of claim 6, wherein the carbon nanotubes longer than the channel length between the electrodes are adsorbed in a floating state.
The method of claim 1, further comprising, after step (d), forming an electrode pad connecting the plurality of electrodes.
KR1020140153385A 2014-11-06 2014-11-06 Method for fabricating gating hysteresis-free carbon nanotube sensor KR101646081B1 (en)

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PCT/KR2015/000196 WO2016072557A1 (en) 2014-11-06 2015-01-08 Carbon nanotube sensor production method for removing gating hysteresis

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KR20180018384A (en) * 2016-08-09 2018-02-21 서울대학교산학협력단 Carbon nanotube based ion sensor and manufacturing method thereof
KR20190019013A (en) * 2017-08-16 2019-02-26 서울대학교산학협력단 Carbon nanotube based ion sensor using stretchable substrate and ion selective membrane and fabrication method thereof

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