KR20160050522A - Plasma deposition apparatus - Google Patents

Abstract

Disclosed is a plasma deposition apparatus capable of depositing a thin film at a low temperature when manufacturing a flexible OLED display. The present invention provides a plasma deposition apparatus which includes a shower head having a plurality of through-holes in an inductive coupled plasma generating device, and thus allows a reaction gas to be uniformly distributed, thereby improving deposition uniformity. Furthermore, by-products created in a chamber can be cleaned even without having a separate remote plasma source.

Description

[0001] Plasma deposition apparatus [0002]

The present invention relates to a high density plasma deposition apparatus, and more particularly, to a high density plasma deposition apparatus for an OLED flexible device in which a thin film for an OLED flexible device is deposited at a low temperature using a high density inductively coupled plasma will be.

Techniques for manufacturing thin films are divided into physical vapor deposition (PVD) using a physical method and chemical vapor deposition (CVD) using a chemical method.

Physical vapor deposition (PVD) is a method in which a material is evaporated while generating a beam or gas flow to deposit a thin film on a substrate, and a chemical vapor deposition (CVD) method is used to deposit a gaseous mixture on a heated substrate surface And the product is deposited on the surface of the substrate.

Chemical vapor deposition (CVD) is a chemical vapor deposition (CVD) process, which involves decomposition of a reactive gas injected into a reactor according to a reaction energy source, thermal CVD using thermal energy during thin film deposition, An inductively coupled plasma CVD (ICPCVD) method in which a film is deposited by forming a high-density plasma, and the like are classified into an inductively coupled plasma enhanced chemical vapor deposition (ICPCVD) method and a plasma enhanced chemical vapor deposition (PECVD) method.

FIG. 1 is a view for explaining a general organic chemical vapor deposition apparatus.

Referring to FIG. 1, a general organic chemical vapor deposition apparatus includes a chamber body 100 including an upper cover 110 and a lower main body 120. The substrate 130 is put into the chamber body 100 and the inside can be maintained in a vacuum state while being sealed by sealing.

The upper electrode 111 is located under the upper cover 110 and the lower electrode 121 is formed at the bottom of the lower body 120. The upper electrode . And a showerhead 112 arranged below the upper electrode 111 and spaced apart from the upper electrode 111 by a predetermined distance.

The upper electrode 111 is formed with a gas passage 113 through which a reaction gas supplied from an external gas supply unit (not shown) flows into the upper electrode 111. The gas injected into the gas passage 113 passes through the showerhead 112 The gas is injected into the chamber body 100 through the gas passage. A high frequency power is applied to the upper electrode 111 from a high frequency power source 114 and a high frequency power source 114 reacts with the gas injected into the chamber body 100 to generate a plasma.

When the deposition process is repeated by the generated plasma, the inside of the chamber body 100 is contaminated by byproducts generated during the process, and a remote plasma source (Remote Plasma Source) disposed above the chamber body 100 is used to periodically clean the inside of the chamber body 100. [ The cleaning process is performed by the RPS 140.

Organic chemical vapor deposition equipment (PECVD) has a relatively high deposition rate and a shower head, which is superior in deposition uniformity. However, the density of the thin film is lower than that of ICPCVD (Inductively Coupled Plasma Chemical Vapor Deposition), and the WET (Wet Etch Rate) is relatively large. In addition, when the deposition process is repeated, a remote plasma device (RPS) is installed to periodically clean the inside of the process chamber because the deposition material is deposited on the process chamber wall to cause internal contamination.

2 is a view for explaining a conventional inductively coupled plasma chemical vapor deposition apparatus.

2, a general inductively coupled plasma chemical vapor deposition apparatus includes a chamber body 200 including an upper lid 210 and a lower main body 220. The substrate 230 is introduced into the chamber body 200, and the interior of the chamber body 200 can be maintained in a vacuum state while being sealed by sealing.

The chamber body 200 can be divided into a plasma generating portion 250 at an upper portion and a processing chamber 260 at a lower portion by a frame 240 including a dielectric window 241. [

A high frequency antenna 251 is disposed in the plasma generator 250 and a high frequency power source 252 is connected to the high frequency antenna 251 to apply high frequency power for plasma generation. A gas supply line 242 for supplying a process gas and a nozzle 243 are connected to the frame 240 to supply the process gas into the process chamber 260. The processing chamber 260 also includes a lower electrode 261 that supports the substrate 230 and is arranged to fix the substrate 230 to be processed.

When a processing gas is supplied to the processing chamber 260 and power is supplied to the antenna 251 from the RF power supply 252, an electric field induced by the magnetic field generated by the antenna 251 reacts with the processing gas to generate a high- do.

Although the deposition rate of the ICPD is relatively low, it is advantageous to deposit a high density film by the generated high density plasma. However, because of the difficulty of antenna design and the fact that the gas nozzle must be installed in the frame supporting the dielectric window, it is difficult to achieve the deposition distribution due to the limitation of arrangement, and the remote plasma device (RPS) There is a disadvantage that it can not be used as a mass production facility because it is difficult to mount it by the antenna disposed at the upper part.

Korean Patent Publication No. 10-2009-0052819

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems of the prior art. In other words, the present invention provides a plasma deposition apparatus improved in deposition distribution by uniformly distributing radicals and main reaction gases generated in plasma by a showerhead having a plurality of through holes formed in an inductively coupled plasma generating apparatus.

According to an aspect of the present invention, there is provided a plasma deposition apparatus comprising: a chamber body; A processing chamber provided by the chamber body for plasma processing the accommodated substrate to be processed; A plasma generator for generating a plasma in the process chamber; A support base disposed in the chamber body for supporting the substrate to be processed; A showerhead disposed above the support portion in the treatment chamber to separate the treatment chamber into an upper first region and a lower second region; And a first gas supply unit installed to supply a first gas to the first region of the processing chamber, wherein the showerhead has a plurality of through holes for allowing a first radical of the first region to pass therethrough, And a second gas supply line configured to supply a second gas to the second region.

According to the present invention, a thin film for an OLED flexible device can be deposited at a low temperature using a high-density inductively coupled plasma, and a shower head can be provided in the treatment chamber to improve the deposition distribution, And can be effectively applied to a deposition process. In addition, it is possible to produce a strong thin film which is difficult to penetrate oxygen and moisture, and thus it can be applied to an organic sealing process of an OLED.

FIG. 1 is a view for explaining a general organic chemical vapor deposition apparatus.
2 is a view for explaining a conventional inductively coupled plasma chemical vapor deposition apparatus.
3 is a view for explaining a plasma deposition apparatus of the present invention.
4 is a top plan view of the shower head of the present invention.
5 is a cross-sectional view showing the configuration of the showerhead of the present invention.
6 is a view for explaining the upper plate of the electrostatic chuck electrode of the present invention.
7 is a view for explaining the lower plate of the electrostatic chuck electrode of the present invention.
8 is a view showing a measurement position of a substrate according to an experimental example of the present invention.
9 is a result of simulating the temperature deviation of the electrostatic chuck electrode of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Referring to the accompanying drawings, the same or corresponding components are denoted by the same reference numerals, .

3 is a view for explaining a plasma deposition apparatus of the present invention.

Referring to FIG. 3, the chamber body 300 of the plasma deposition apparatus according to the present invention provides an environment for performing a plasma deposition process on the substrate 301 and a space for generating and reacting plasma. At this time, the chamber body 300 may have a rectangular shape as a whole to be suitable for the target substrate 301 having a rectangular plate shape. However, the shape of the chamber body 300 in the present invention may be changed according to the type and shape of the target substrate 301 to be subjected to the plasma processing.

The chamber body 300 may include an upper lid 310, a frame 320, and a lower body 330.

The chamber body 300 is divided into an upper lid 310 and a lower main body 330 by a frame 320. The upper lid 310 includes a plasma generating part 340 in which a high frequency antenna 341 is disposed And the lower main body 330 includes a treatment chamber 350 in which a shower head 360 and a support portion 370 are disposed.

The high frequency antenna 341 of the plasma generating unit 340 is a means for inducing an electric field for generating a plasma in the process chamber 350 by receiving the high frequency power from the first high frequency power source 342 and has a coil- , The shape, the number and the arrangement of the antenna 341 can be appropriately selected according to the process to be performed.

The high frequency power supplied from the first RF power supply 342 is supplied to the antenna 310 through the power feed line 344 disposed in the upper lid 310 via the first matching unit 343 provided on the upper lid 310, 341). The first matching unit 343 adjusts a load impedance by the antenna 341 and a plasma impedance caused by the plasma generated by the antenna 341 to an impedance matching with an internal impedance of the first RF power supply 342, Thereby minimizing the loss of power applied from the first RF power supply 342 to the antenna 341.

When high frequency power is applied to the antenna 341 from the first RF power supply 342, an electric field induced by the magnetic field generated by the antenna 341 reacts with the process gas to generate plasma. Since the electric field induced by the magnetic field of the antenna 341 can reduce the electric field lost to the wall of the chamber body 300 by the magnetic field, it is possible to generate a high density plasma compared to the electric field generated by the organic chemical vapor deposition equipment (PECVD) .

When high frequency power is applied to the antenna 341, an induction electric field for generating plasma is formed inside the chamber body 300, and a positive charge and a negative charge are alternately applied to the surface of the antenna 341 at a high frequency The storage electric field can be formed.

At this time, the storage electric field is a means for igniting the initial plasma, but sputtering causes damages to the dielectric window 321 disposed between the plasma and the antenna 341 and reduces the uniformity of the plasma It may have a negative effect such as knocking.

The gap between the antenna 341 and the dielectric window 321 may be adjusted or the shape and structure of the antenna 341 or the dielectric window 321 may be changed to prevent the negative influence of the electric field on the dielectric window 321 The influence can be minimized. By minimizing the influence of the electric field applied to the dielectric window 321, it is possible to more effectively transfer the energy due to the high frequency power to the plasma through inductive coupling.

The frame 320 includes a dielectric window 321 arranged to allow the magnetic field generated by the antenna 341 to flow into the processing chamber 350 and a first dielectric layer 322 which reacts with the induced electric field to emit a first gas And a gas supply unit 322.

The frame 320 may have the same shape as the dielectric window 321 and an opening 323 smaller in size than the dielectric window 321. The dielectric window 321 is disposed at the opening 323 of the frame 320 and is supported by the frame 320 and is provided on substantially the same horizontal plane at the top of the chamber body 300.

The shape of the dielectric window 321 may be a circle, an ellipse, a triangle, or a rectangle, and may be arranged in a rectangular shape. In addition, the dielectric window 321 may have one or more number of divided shapes, and may be one of four, five, six, eight, nine, or more.

The first gas supply unit 322 includes a first gas discharge port 324 that discharges a first gas toward the substrate 301 from the upper portion of the chamber body 300. The first gas discharge port 324 includes a frame 320 of the first and second embodiments.

When the plasma deposition apparatus is applied to the large-sized chamber body 300, the dielectric window 321 and the frame 320 may be composed of a plurality of regions, and thus at least one first jet port 324 may be provided .

However, in the ICPVD using the antenna 341, since the first gas supply unit 322 for injecting the first gas is installed in the frame 320 supporting the dielectric window 321, the flexible OLED equipment In the same large area and asymmetric structure, the distribution of the deposition rate can not be achieved because of the limitation of the first jet port arrangement.

Accordingly, in the present invention, the shower head 360, which is an advantage of the organic chemical vapor deposition equipment, is included in the treatment chamber 350 to uniformly distribute the first gas to improve the deposition distribution.

FIG. 4 is a top plan view of the shower head of the present invention, and FIG. 5 is a cross-sectional view of the showerhead of the present invention.

Referring to FIGS. 4 and 5, the shower head 360 according to the present invention may be formed so that a plurality of plates overlap. Preferably, two plates may be formed to overlap.

A plurality of through holes 403 are formed in the upper plate 401 of the two plates and a plurality of through holes 403 may be formed at uniform intervals from the upper surface to the lower surface of the upper plate 401. However, The size and spacing may vary depending on the process conditions.

A plurality of through holes 403 are formed in the lower plate 402 at uniform intervals from the upper surface to the lower surface of the lower plate 402 and the plurality of through holes 403 of the upper plate 401 and the lower plate 402 May be formed so as to overlap each other when the two plates are overlapped.

In addition, the shower head 360 may be provided with a second gas supply part 406 for injecting a second gas. A second gas supply line 404 may be formed on the lower surface of the upper plate 401 of the shower head 360 and connected to the plurality of second air outlets 405 in the lateral direction of the shower head 360, Each of the second air outlets 405 is a downward air outflow which is blocked by the upper part and injects a second gas supplied from a gas supply source (not shown) toward the substrate 301 through the second gas supply line 404.

The plurality of second jet ports 405 may be formed in the lower plate 402 and the showerhead 360 may be divided into zones by the second gas supply line 404. The substrate 404 may be divided into an inner region 404a, an intermediate region 404b, and an outer region 404c in the direction of the substrate 301, but the present invention is not limited thereto. Since the divided region of the second jet port 405 can suppress gas supply through taping or the like for each zone, it is possible to control the gas for each zone during the deposition process of the substrate 301 to be processed.

The arrangement position of the shower head 360 may be disposed between the plasma generating part 340 and the support part 370 so that the process chamber 350 can be divided into the first area 361 and the second area 362 , Preferably close to the support stand.

The first region 361 is a region between the plasma generating portion 340 and the shower head 360. The first region 361 is formed by the induction electric field generated by the antenna 341 and the first gas injected from the first gas supplying portion 322, A plasma is generated, and a first radical is generated for the deposition process by the first plasma. The gas injected from the first gas supply part 322 for the process may be any one of N 2, H 2, NH 3, O 2 and N 2 O, but is not limited thereto.

The second region 362 is a region between the showerhead 360 and the support portion 370. The first radical generated by the first plasma is supplied through the plurality of through holes 403 formed in the showerhead 360 2 < / RTI > The moved first radical reacts with the second gas injected from the second gas supply unit 406 of the shower head 360 to deposit a thin film on the substrate 301 to be processed. The second gas injected to deposit the thin film on the substrate 301 in the second gas supply unit 406 may be SiH4, but is not limited thereto.

The first plasma generated by the first gas supply part 322 formed in the frame 320 and the first radical generated by the first plasma and the second radical generated by the second gas supply part 406 formed on the shower head 360 Since the film is deposited by reacting the second gas, a uniform gas distribution can be formed as compared with the gas injection method using only the gas nozzle provided in the frame 320 in the past, and the deposition distribution can be improved.

When the thin film deposition process is completed on the substrate 301, a thin film is formed not only on the substrate 301 but also on a part of the wall of the chamber body 300 or a part of the part in the chamber body 300. The thin film formed in the chamber body 300 is thickened by repeating several steps and is separated from the wall of the chamber body 300 to be included in the substrate in the process, thereby causing a defect in the thin film on the substrate. For this reason, when the deposition process is completed, periodic cleaning must be performed to remove the by-products in the chamber body 300.

Typically, chemical vapor deposition (CVD) equipment uses a remote plasma device (RPS) as a cleaning device for cleaning within this chamber 300. However, since the remote plasma apparatus RPS must be installed above the chamber body 300, in the inductively coupled plasma chemical vapor deposition apparatus (ICPCVD) in which the antenna 341 is installed on the upper part, the space for installing the remote plasma apparatus (RPS) And there is a lot of difficulty in the installation. Further, a dielectric is provided under the antenna 341 to make it impossible to install a filling port of the remote plasma apparatus (RPS).

Therefore, in the ICPVD of the present invention, a remote plasma apparatus (RPS) is not separately provided. In the first region 361 divided by the showerhead 360, the second region 361 for the cleaning process Byproducts in the chamber body 300 can be cleaned by generating a plasma.

After the substrate is transferred to the outside of the chamber body 300 when the thin film deposition process is repeated on the target substrate 301 and the byproducts are formed in the chamber body 300, And the cleaning gas for cleaning the by-product is sprayed into the process chamber 350. The gas for the byproduct cleaning may be any one of NF3, SF6, and Ar, but is not limited thereto.

When the cleaning gas is injected, the first RF power source 342 is applied to the antenna 341 and the second plasma is generated in the first region 361 by the electric field induced by the antenna 341. The second radical generated by the second plasma is moved to the second region 362 through the plurality of through holes 403 formed in the shower head 360 and the moved second radicals are injected into the chamber body 300 The attached byproducts react and are exhausted to the outside of the chamber body 300 through the exhaust device 380 in a gaseous state.

As described above, since the inductively coupled plasma chemical vapor deposition apparatus (ICPCVD) of the present invention can clean the byproducts without separately providing a remote plasma apparatus (RPS) for cleaning by-products in the chamber body 300, the remote plasma apparatus RPS) can be reduced, and the configuration of the equipment can be simplified.

The substrate support portion 370 includes an electrostatic chuck electrode 371, an insulator case 374, a grounding plate 372, Electrode 375 as shown in FIG.

The electrostatic chuck electrode 371 holds the substrate 301 while holding the substrate 301, and maintains the temperature of the substrate.

In general, organic chemical vapor deposition equipment (PECVD) has a relatively low plasma density, so that there is no significant problem in maintaining the temperature of the substrate even during the process of a large-area substrate. However, the inductively coupled plasma chemical vapor deposition (ICPCVD) using a relatively high process temperature causes the substrate to warp due to the high temperature, and an electrostatic chuck (ESC) is used to fix the entire surface of the substrate do.

FIG. 6 is a view for explaining an upper plate of the electrostatic chuck electrode of the present invention, and FIG. 7 is a view for explaining a lower plate of the electrostatic chuck electrode of the present invention.

Referring to FIGS. 6 and 7, the electrostatic chuck electrode 371 may include temperature control means 504 and 505. The helium holes 504 are formed in the upper plate 501 to increase the heat transfer efficiency of the target substrate 301 and improve the temperature distribution using the helium gas. .

The helium holes 504 may be divided into zones to inject helium gas toward the target substrate 301 and increase the temperature distribution. Preferably, the inner region 504a and the outer region 505b may be formed separately, but the present invention is not limited thereto.

A coolant pattern 505 for controlling the temperature distribution of the electrostatic chuck electrode 371 may be formed on the lower plate 502. The coolant pattern 505 has two inlets 506 and two outlets 507. When the coolant is injected through the inlet 506, the coolant flows along the coolant pattern 505 formed on the lower plate 502 The electrostatic chuck electrode 371 is cooled and then discharged to the discharge port 507.

The coolant pattern 505 may be divided into zones to improve the temperature distribution of the electrostatic chuck electrodes 371 and is preferably divided into an inner area 505a, an outer area 505b, and an edge area 505c However, the present invention is not limited thereto.

One end of the lower plate 502 is connected to the lower surface of the lower plate 502 and the other end of the lower plate 502 is connected to the second matching unit 391. The second high frequency power source 392 applies bias high frequency power to the electrostatic chuck And a connecting member 393 for transmitting the voltage to the electrode 371 may be included.

The coupling member 393 is formed with a coupling groove 394 so that the connection height with the second matching unit 391 can be changed in accordance with the height of the support base portion 370.

 Since the showerhead 360 is disposed in the process chamber 350 and is divided into the first region 361 and the second region 362, the ICPVD method of the present invention can reduce the deposition rate and the deposition rate of the deposited thin film The quality can be lower than that of general inductively coupled plasma chemical vapor deposition equipment (ICPCVD).

 In order to increase the deposition rate and the quality of the deposited thin film, the bias power is applied to the electrostatic chuck electrode 371 by using the second high frequency power source 392, thereby improving the deposition rate and the thin film robustness.

The support base 370 includes an insulating case 374 surrounding the electrostatic chuck electrode 371 except for the upper portion of the electrostatic chuck electrode 371 and an insulating case 374 for insulating the electrostatic chuck electrode 371 from the plasma. Grounded electrode 375, as shown in FIG.

The ground electrode 375 may include a height changing means 395 which can change the height of the supporting table 370. The height of the supporting table 370 may be changed by the height changing means to improve the deposition distribution of the substrate .

<Experimental Example>

In order to evaluate the performance of the inductively coupled plasma chemical vapor deposition apparatus employing the showerhead and the electrostatic chuck electrode according to the present invention, a test was performed aiming at a deposition rate of SiNx thin film of at least 500 Å / min and a deposition distribution of within ± 10%.

Tables 1 and 8 are test data on the plasma deposition apparatus of the present invention.

The size of the showerhead according to the present experimental example is 1425 mm x 2000 mm, and 3264 holes having a diameter of 20 mm are formed. The interval between the holes is 28 mm x 28 mm, and is configured to cover the entire substrate to be processed. The distance from the top of the electrostatic chuck electrode to the bottom of the dielectric window was set to 200 mm. The pressure inside the chamber was maintained at 12 mTorr, SiH4 and NH3 were used as the reaction gas for the plasma treatment, and a power of 13.56 MHz of 6 kW was applied for the plasma reaction, and the reaction proceeded for 120 seconds.

A substrate having a size of 925 mm x 1500 mm was used as a substrate to be processed, and the position of the substrate as shown in Fig. 8 was measured to calculate the deposition rate and the deposition distribution.

Table 1 shows the results of measurement of the deposition thickness in each region.

Sample number Thickness (Å) Deposition rate (Å / min) Deposition distribution (%) One 1197.74 589.95 9.93% 2 1208.78 3 1186.24 4 1206.25 5 1239.17 6 1262.29 7 1239.9 8 1231.88 9 1235.7 10 1224.4 11 1028.03 12 1044.45 13 1033.92

The deposition rate and the distribution of deposition were calculated to be 589.95 Å / min and the deposition distribution of ± 9.93%, respectively. The deposition rate and the deposition distribution were both achieved in the test target.

The performance of the electrostatic chuck electrode was simulated using a simulation tool aiming at the electrostatic chuck electrode temperature uniformity within 80 ± 5 ℃.

9 is a result of simulating the temperature deviation of the electrostatic chuck electrode by modeling the electrostatic chuck electrode in 3D and using SolidWorks as a temperature simulation tool.

The simulation condition was that the external temperature was 20 ℃ and the size of the bottom plate was modeled as t30 × 1080 × 1660mm and the material was set as A5052. The fluid flowing in the coolant pattern was set to HT200 and the flow rate and temperature of the fluid flowing in the inner region were set to 20 L / min and 80 ° C. and the flow rate and temperature of the fluid flowing in the outer and edge regions were set to 30 L / min and 82 ° C. And the simulation was performed. Simulation results show that the temperature deviation of the electrostatic chuck electrode is within ± 5 ℃ with ± 1.72 ℃.

As described above, in the plasma deposition apparatus of the present invention, a showerhead having a plurality of through-holes is disposed between the support frame and the frame to generate a first plasma for processing in the first region, and a plasma generated by the first plasma The first radical may be transferred to the second processing zone through the plurality of through holes of the showerhead and reacted with the second gas injected from the showerhead to deposit the substrate on the substrate.

In addition, it is possible to reduce the cost by cleaning the by-products generated in the chamber body by using the second radical of the second plasma generated in the first region without separately providing the remote plasma equipment, A plasma deposition apparatus is provided.

It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

300: chamber body 301: substrate to be processed
310: upper cover 320: frame
330: Lower main body 340: Plasma generating part
350: processing chamber 360: shower head
370: Supporting portion 380: Exhausting device

Claims (10)

In the plasma deposition apparatus,
A chamber body;
A processing chamber provided by the chamber body for plasma processing the accommodated substrate to be processed;
A plasma generator for generating a plasma in the process chamber;
A support base disposed in the chamber body for supporting the substrate to be processed;
A showerhead disposed above the support portion in the treatment chamber to separate the treatment chamber into an upper first region and a lower second region; And
And a first gas supply unit installed to supply a first gas to the first region of the processing chamber,
Wherein the showerhead has a plurality of through holes for passing a first radical of the first region and a second gas supply line formed to supply a second gas to the second region, . The method according to claim 1,
Wherein the second gas supply line is drawn in the lateral direction of the showerhead and is disposed in the showerhead, and a plurality of air outlets are connected to the supply line. 3. The method of claim 2,
Wherein each of the plurality of air outlets is a downward air outflow which is blocked at the top. The method according to claim 1,
Wherein the showerhead is disposed closer to the support portion than the plasma generating portion. The method of claim 3,
Wherein the first radical of the first gas and the second gas react in the second region and are deposited on the substrate to be processed. The method according to claim 1,
And the cleaning gas is injected into the first gas supply unit during the cleaning process. 3. The method of claim 2,
Wherein the plurality of air outlets are formed by dividing the showerhead into zones. 3. The method of claim 2,
And the second gas is injected corresponding to the first gas type. 9. The method of claim 8,
Wherein the second gas is injected when the first gas is one of N2, H2, NH3, O2, and N2O. 10. The method of claim 9,
Wherein when the first gas is one of NF3, SF6, and Ar, only the first gas is injected.

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