KR101613798B1 - Shower head for vapor deposition equipment - Google Patents

Abstract

Disclosed is a shower head for a vapor deposition device capable of depositing a thin film in a low temperature, when an OLED flexible display is manufactured. The shower head comprises: a plurality of through-holes placed in an inductively coupled plasma generation device; and a main gas provision unit. Accordingly, the shower head is configured to evenly distribute reaction gas to enhance a deposition distribution rate.

Description

SHOWER HEAD FOR VAPOR DEPOSITION EQUIPMENT

The present invention relates to a showerhead for a deposition apparatus, and more particularly, to a showerhead for a deposition apparatus, and more particularly, to a thin film deposition apparatus for an OLED flexible device using a high density inductively coupled plasma Shower head.

Techniques for manufacturing thin films are divided into physical vapor deposition (PVD) using a physical method and chemical vapor deposition (CVD) using a chemical method.

Physical vapor deposition (PVD) is a method in which a material is evaporated while generating a beam or gas flow to deposit a thin film on a substrate, and a chemical vapor deposition (CVD) method is used to deposit a gaseous mixture on a heated substrate surface And the product is deposited on the surface of the substrate.

Chemical vapor deposition (CVD) is a chemical vapor deposition (CVD) process, which involves decomposition of a reactive gas injected into a reactor according to a reaction energy source, thermal CVD using thermal energy during thin film deposition, An inductively coupled plasma CVD (ICPCVD) method in which a film is deposited by forming a high-density plasma, and the like are classified into an inductively coupled plasma enhanced chemical vapor deposition (ICPCVD) method and a plasma enhanced chemical vapor deposition (PECVD) method.

FIG. 1 is a view for explaining a general organic chemical vapor deposition apparatus.

Referring to FIG. 1, a general organic chemical vapor deposition apparatus includes a chamber body 100 including an upper cover 110 and a lower main body 120. The substrate 130 is put into the chamber body 100 and the inside can be maintained in a vacuum state while being sealed by sealing.

The upper electrode 111 is located under the upper cover 110 and the lower electrode 121 is formed at the bottom of the lower body 120. The upper electrode . And a showerhead 112 arranged below the upper electrode 111 and spaced apart from the upper electrode 111 by a predetermined distance.

The upper electrode 111 is formed with a gas passage 113 through which a reaction gas supplied from an external gas supply unit (not shown) flows into the upper electrode 111. The gas injected into the gas passage 113 passes through the showerhead 112 The gas is injected into the chamber body 100 through the gas passage. A high frequency power is applied to the upper electrode 111 from a high frequency power source 114 and a high frequency power source 114 reacts with the gas injected into the chamber body 100 to generate a plasma.

When the deposition process is repeated by the generated plasma, the inside of the chamber body 100 is contaminated by byproducts generated during the process, and a remote plasma source (Remote Plasma Source) disposed above the chamber body 100 is used to periodically clean the inside of the chamber body 100. [ The cleaning process is performed by the RPS 140.

Organic chemical vapor deposition equipment (PECVD) has a relatively high deposition rate and a shower head, which is superior in deposition uniformity. However, the density of the thin film is lower than that of ICPCVD (Inductively Coupled Plasma Chemical Vapor Deposition), and the WET (Wet Etch Rate) is relatively large. In addition, when the deposition process is repeated, a remote plasma device (RPS) is installed to periodically clean the inside of the process chamber because the deposition material is deposited on the process chamber wall to cause internal contamination.

2 is a view for explaining a conventional inductively coupled plasma chemical vapor deposition apparatus.

2, a general inductively coupled plasma chemical vapor deposition apparatus includes a chamber body 200 including an upper lid 210 and a lower main body 220. The substrate 230 is introduced into the chamber body 200, and the interior of the chamber body 200 can be maintained in a vacuum state while being sealed by sealing.

The chamber body 200 can be divided into a plasma generating portion 250 at an upper portion and a processing chamber 260 at a lower portion by a frame 240 including a dielectric window 241. [

A high frequency antenna 251 is disposed in the plasma generator 250 and a high frequency power source 252 is connected to the high frequency antenna 251 to apply high frequency power for plasma generation. A gas supply line 242 for supplying a process gas and a nozzle 243 are connected to the frame 240 to supply the process gas into the process chamber 260. The processing chamber 260 also includes a lower electrode 261 that supports the substrate 230 and is arranged to fix the substrate 230 to be processed.

When a processing gas is supplied to the processing chamber 260 and power is supplied to the antenna 251 from the RF power supply 252, an electric field induced by the magnetic field generated by the antenna 251 reacts with the processing gas to generate a high- do.

Although the deposition rate of the ICPD is relatively low, it is advantageous to deposit a high density film by the generated high density plasma. However, because of the difficulty of antenna design and the fact that the gas nozzle must be installed in the frame supporting the dielectric window, it is difficult to achieve the deposition distribution due to the limitation of arrangement, and the remote plasma device (RPS) There is a disadvantage that it can not be used as a mass production facility because it is difficult to mount it by the antenna disposed at the upper part.

Korean Patent Publication No. 10-2009-0052819

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems of the prior art. That is, a showerhead having a plurality of through-holes and a main gas supply unit is provided in the inductively-coupled plasma generator to uniformly distribute the radicals and the main gas generated in the plasma, thereby improving the deposition distribution. .

According to an aspect of the present invention, there is provided a shower head for a deposition apparatus, comprising: a body; A plurality of through holes formed in a face of the body to allow the source gas generated at one side to pass to the other side; And a main gas supply unit disposed in the body to supply main gas to the other side of the body.

According to the present invention, a thin film for an OLED flexible device can be deposited at a low temperature using a high-density inductively coupled plasma, and a shower head can be provided in the treatment chamber to improve the deposition distribution, And can be effectively applied to a deposition process. In addition, it is possible to produce a strong thin film which is difficult to penetrate oxygen and moisture, and thus it can be applied to an organic sealing process of an OLED.

FIG. 1 is a view for explaining a general organic chemical vapor deposition apparatus.
2 is a view for explaining a conventional inductively coupled plasma chemical vapor deposition apparatus.
3 is a view for explaining a plasma deposition apparatus of the present invention.
FIG. 4A is a plan view of a shower head cut to explain a showerhead of the present invention. FIG.
FIG. 4B is a bottom view of the shower head cut to illustrate the showerhead of the present invention. FIG.
FIG. 5 is a view showing a configuration of an upper side plate of a showerhead for explaining a first embodiment according to a plurality of through holes according to the present invention. FIG.
6 is a view showing the upper plate structure of a showerhead for explaining a second embodiment according to the plurality of through holes according to the present invention.
7 is a view showing a configuration of an upper side plate of a shower head for explaining a third embodiment according to a plurality of through holes according to the present invention.
FIG. 8 is a cross-sectional view of a lower side plate of a shower head for explaining a first embodiment according to the main gas nozzle of the present invention. FIG.
9 is a cross-sectional view of a showerhead for explaining a first embodiment according to the main gas injection port of the present invention.
10 is a view showing the structure of the upper side plate of the shower head for explaining the second embodiment according to the main gas injection port of the present invention.
11 is a cross-sectional view of a showerhead for explaining a second embodiment according to the main gas nozzle of the present invention.
12 is a view showing a measurement position of a substrate according to an experimental example of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Referring to the accompanying drawings, the same or corresponding components are denoted by the same reference numerals, .

3 is a view for explaining a plasma deposition apparatus of the present invention.

Referring to FIG. 3, the chamber body 300 of the plasma deposition apparatus according to the present invention provides an environment for performing a plasma deposition process on the substrate 301 and a space for generating and reacting plasma. At this time, the chamber body 300 may have a rectangular shape as a whole to be suitable for the target substrate 301 having a rectangular plate shape. However, the shape of the chamber body 300 in the present invention may be changed according to the type and shape of the target substrate 301 to be subjected to the plasma processing.

The chamber body 300 may include an upper lid 310, a frame 320, and a lower body 330.

The chamber body 300 is divided into an upper lid 310 and a lower main body 330 by a frame 320. The upper lid 310 includes a plasma generating part 340 in which a high frequency antenna 341 is disposed And the lower main body 330 includes a treatment chamber 350 in which a shower head 360 and a support portion 370 are disposed.

The high frequency antenna 341 of the plasma generating unit 340 is a means for inducing an electric field for generating a plasma in the process chamber 350 by receiving the high frequency power from the first high frequency power source 342 and has a coil- , The shape, the number and the arrangement of the antenna 341 can be appropriately selected according to the process to be performed.

The high frequency power supplied from the first RF power supply 342 is supplied to the antenna 310 through the power feed line 344 disposed in the upper lid 310 via the first matching unit 343 provided on the upper lid 310, 341). The first matching unit 343 adjusts a load impedance by the antenna 341 and a plasma impedance caused by the plasma generated by the antenna 341 to an impedance matching with an internal impedance of the first RF power supply 342, Thereby minimizing the loss of power applied from the first RF power supply 342 to the antenna 341.

When high frequency power is applied to the antenna 341 from the first RF power supply 342, an electric field induced by the magnetic field generated by the antenna 341 reacts with the process gas to generate plasma. Since the electric field induced by the magnetic field of the antenna 341 can reduce the electric field lost to the wall of the chamber body 300 by the magnetic field, it is possible to generate a high density plasma compared to the electric field generated by the organic chemical vapor deposition equipment (PECVD) .

When high frequency power is applied to the antenna 341, an induction electric field for generating plasma is formed inside the chamber body 300, and a positive charge and a negative charge are alternately applied to the surface of the antenna 341 at a high frequency The storage electric field can be formed.

At this time, the storage electric field is a means for igniting the initial plasma, but sputtering causes damages to the dielectric window 321 disposed between the plasma and the antenna 341 and reduces the uniformity of the plasma It may have a negative effect such as knocking.

The gap between the antenna 341 and the dielectric window 321 may be adjusted or the shape and structure of the antenna 341 or the dielectric window 321 may be changed to prevent the negative influence of the electric field on the dielectric window 321 The influence can be minimized. By minimizing the influence of the electric field applied to the dielectric window 321, it is possible to more effectively transfer the energy due to the high frequency power to the plasma through inductive coupling.

The frame 320 includes a dielectric window 321 disposed to allow the magnetic field generated by the antenna 341 to flow into the processing chamber 350 and a source gas supply unit 322 that reacts with the induced electric field to inject the source gas to generate plasma. (325).

The frame 320 may have the same shape as the dielectric window 321 and an opening 323 smaller in size than the dielectric window 321. The dielectric window 321 is disposed at the opening 323 of the frame 320 and is supported by the frame 320 and is provided on substantially the same horizontal plane at the top of the chamber body 300.

The shape of the dielectric window 321 may be a circle, an ellipse, a triangle, or a rectangle, and may be arranged in a rectangular shape. In addition, the dielectric window 321 may have one or more number of divided shapes, and may be one of four, five, six, eight, nine, or more.

The source gas supply portion 325 may include a source gas passage 322 and a source gas injection hole 324. [ The source gas passage 322 is connected to the source gas injection port 324 for spraying the source gas toward the substrate 301 from the top of the chamber body 300. The source gas injection port 324 is connected to the frame 320, As shown in Fig.

When the plasma deposition apparatus is applied to the large-sized chamber body 300, the dielectric window 321 and the frame 320 may be composed of a plurality of regions, and accordingly, one or more source gas jetting openings 324 may be provided .

However, since the source gas passage 322 is provided in the frame 320 supporting the dielectric window 321, the inductively coupled plasma deposition apparatus (ICPCVD) using the antenna 341 is not suitable for a large-area, asymmetric structure such as a flexible OLED equipment It is impossible to achieve the deposition distribution because of the limitation of the arrangement of the source gas jet orifices 324.

Accordingly, in the present invention, the shower head 360, which is an advantage of the organic chemical vapor deposition apparatus, is included in the processing chamber 350 to uniformly form the distribution of the source gas and improve the deposition distribution.

FIG. 4A is a plan view of a showerhead to explain the showerhead of the present invention, and FIG. 4B is a bottom view of the showerhead of the showerhead to explain the showerhead of the present invention.

4A and 4B, the shower head 360 of the present invention may include a body 400, a plurality of through holes 402, and a main gas supply unit 509.

At least two separate plates may be coupled to the body 400, and preferably the upper plate 401 and the lower plate 501, which are two separate plates, may be combined.

A plurality of through holes 402 may be formed in the upper side plate body 401 and the lower side plate 501 and a plurality of through holes 402 may be formed to overlap the upper side plate body 401 and the lower side plate body 501 have. The main gas supply part 509 may include a main gas passage 503 and a main gas injection port 502. The main gas supply part 509 may include a main gas supply part 509, .

5 to 11 are views for explaining a configuration of a showerhead according to an embodiment of the present invention.

5 to 11, a plurality of through-holes 402 may be formed in the two plate-like upper plate bodies 401, and a plurality of through-holes 402 may have a predetermined size And can be uniformly formed from the upper surface to the lower surface of the upper side plate body 401 at regular intervals.

6 and 7, the first through holes 402a and the second through holes 402b may be formed in different sizes. The second through holes 402b may be formed in the first through holes 402a. ≪ / RTI >

In general, the deposition equipment has a tendency that the uniformity of deposition in the outer region of the substrate 301 is lower than that of the inner region. Since the chamber body 300 of the equipment using the plasma is grounded, the edge area of the outer region of the substrate 301, which is relatively close to the chamber body 300, The uniformity tends to be low.

6, the first through hole 402a is formed at the outermost portion corresponding to the outer region of the target substrate 301, and the inner region is formed of a material having a diameter smaller than that of the first through hole 402a 2 through holes 402b are formed at uniform intervals so that the radicals in the first region 361 can pass more radicals to the outer region than the inner region. 7, the first through hole 402c may be formed at a position corresponding to a corner area having particularly low uniformity even in the outer region of the substrate to be processed, The second through holes 402d having a diameter smaller than that of the second through holes 402d may be formed.

A plurality of through holes 402 may be formed in the lower plate body 501 and a plurality of through holes 402 of the upper plate body 401 and the lower plate body 501 may be formed to overlap each other .

8, the lower plate 501 may include a plurality of main gas injection ports 502 for injecting main gas, and a plurality of main gas injection ports 502 may be formed in the lower plate 501, They can be arranged at uniform intervals corresponding to the size. A main gas passage 503 which is drawn in the lateral direction of the body 400 and connected to the plurality of main gas injection ports 502 may be formed on the upper surface of the lower plate body 501 between the plurality of through holes 402, The furnace 503 can be supplied with gas from two or more inlets 504. Preferably, two inlets 504 may be formed at positions symmetrical to each other laterally of the body 400, as in the embodiment of FIG.

Each of the plurality of main gas injection openings 502 is divided into a plurality of groups 510 sequentially so as to uniformly inject the main gas injection. Each of the plurality of groups 510 is connected to the main gas passage 503, The main gas introduced into the two inlet ports 504 may be uniformly distributed to the plurality of main gas injection ports 502 so that a uniform gas flow rate may be injected from the plurality of main gas injection ports 502. However, the number of the injection ports forming the plurality of groups 510 is not limited to the drawings, and may be variously changed according to the user.

A lower surface of the lower plate body 501 may include a plurality of through holes 402 and a sealing member 512 for sealing surrounding the main gas supply portion 509. A sealing groove 511 may be formed on the lower surface of the lower plate 501 so that the sealing member 512 can be stably mounted and retained. But the size, position and shape of the sealing groove 511 can be changed substantially in various ways. Also, the sealing member 512 is preferably formed of a non-metal material, and an elastic O-ring may be used, but is not limited thereto.

As shown in FIG. 9, a plurality of main gas injection ports 502 may be formed with at least one inclined surface in which the inlet 505 and the outlet 506 are formed in the inward direction. The inclined surface 507 formed in the inlet 505 can minimize the gas flow resistance when the main gas is supplied to the inlet 505 through the main gas passage 503 and the inclined surface 508 formed in the outlet 506 The pressure loss due to the gas flow can be minimized when the gas introduced through the inlet 505 is ejected through the outlet 506. [

Each of the plurality of main gas injection openings 502 is a downwardly directed lower discharge opening and injects the main gas supplied from the inlet 504 toward the substrate 301 through the main gas passage 503.

10 and 11 are views for explaining another embodiment according to the arrangement of a plurality of main gas injection orifices. 10 and 11, a main gas passage 503a may be formed between the plurality of through holes 402 on the lower surface of the upper plate 401a of the body 400, and the main gas passage 503a may be formed by a shower Gas can be supplied from one inlet 504a formed in the lateral direction of the head 360. [ Each of the plurality of main gas injection openings 502a formed in the lower side plate 501a is a downward blowing opening with the top closed and the main gas supplied from the inlet 504a is supplied to the target substrate 301 through the main gas supply line 503a ) Direction.

The plurality of main gas injection ports 502a may be formed by dividing the showerhead 360 into zones by the main gas passage 503a. Preferably, the inner region 503b, the middle region 503c, and the outer region 503d may be formed separately, but the present invention is not limited thereto. Since the divided regions of the plurality of main gas injection orifices 502a can suppress the gas supply through taping or the like for each zone, gas control can be performed for each zone during the deposition process of the substrate 301 to be processed.

The body 400 is disposed between the plasma generator 340 and the supporting table 370 such that the processing chamber 350 can be divided into a first region 361 on one side and a second region 362 on the other side And preferably may be disposed proximate the support stand.

The first region 361 is a region between the plasma generating portion 340 and the showerhead 360 and generates a first plasma by an induced electric field generated by the antenna 341 and a source gas injected from the source gas injection port 324 And a first radical is generated for the deposition process by the first plasma. The gas injected from the source gas injection hole 324 for the process may be any one of N 2, H 2, NH 3, O 2, and N 2 O, but is not limited thereto.

The second region 362 is a region between the showerhead 360 and the support portion 370 and the first radical generated by the first plasma is supplied through the plurality of through holes 402 formed in the showerhead 360 2 < / RTI > The moved first radical reacts with the main gas injected from a plurality of main gas injection ports 502 of the shower head 360 to deposit a thin film on the substrate 301. The main gas injected to deposit the thin film on the substrate 301 at the plurality of main gas injection ports 502 may be SiH4, but is not limited thereto.

A first plasma is generated by a source gas injected from a source gas injection hole 324 formed in the frame 320 and a first radical generated by the first plasma and a plurality of main gas injection holes The gas distribution can be more uniform than that of the conventional gas injection method using only the gas injection port provided in the frame 320, and the deposition distribution can be improved.

When the thin film deposition process is completed on the substrate 301, a thin film is formed not only on the substrate 301 but also on a part of the wall of the chamber body 300 or a part of the part in the chamber body 300. The thin film formed in the chamber body 300 is thickened by repeating several steps and is separated from the wall of the chamber body 300 to be included in the substrate in the process, thereby causing a defect in the thin film on the substrate. For this reason, when the deposition process is completed, periodic cleaning must be performed to remove the by-products in the chamber body 300.

Typically, chemical vapor deposition (CVD) equipment uses a remote plasma device (RPS) as a cleaning device for cleaning within this chamber 300. However, since the remote plasma apparatus RPS must be installed above the chamber body 300, in the inductively coupled plasma chemical vapor deposition apparatus (ICPCVD) in which the antenna 341 is installed on the upper part, the space for installing the remote plasma apparatus (RPS) And there is a lot of difficulty in the installation. Further, a dielectric is provided under the antenna 341 to make it impossible to install a filling port of the remote plasma apparatus (RPS).

Therefore, in the ICPVD of the present invention, a remote plasma apparatus (RPS) is not separately provided. In the first region 361 divided by the showerhead 360, the second region 361 for the cleaning process Byproducts in the chamber body 300 can be cleaned by generating a plasma.

After the thin film deposition process is repeated on the substrate 301 to form the byproducts in the chamber body 300, the substrate is moved to the outside of the chamber body 300, The cleaning gas is injected into the process chamber 350. The gas for the byproduct cleaning may be any one of NF3, SF6, and Ar, but is not limited thereto.

When the cleaning gas is injected, the first RF power source 342 is applied to the antenna 341 and the second plasma is generated in the first region 361 by the electric field induced by the antenna 341. The second radical generated by the second plasma is moved to the second region 362 through the plurality of through holes 402 formed in the shower head 360 and the moved second radicals are injected into the chamber body 300 The attached byproducts react and are exhausted to the outside of the chamber body 300 through the exhaust device 380 in a gaseous state.

Therefore, since the byproduct can be cleaned without separately providing the remote plasma apparatus (RPS) for cleaning the by-product in the chamber body 300, the installation cost for the remote plasma apparatus (RPS) can be reduced, can do.

The substrate support unit 370 may include an electrostatic chuck electrode 371, an insulator case 374, a ground electrode (not shown) 375).

The electrostatic chuck electrode 371 holds the substrate 301 while holding the substrate 301, and maintains the temperature of the substrate.

In general, organic chemical vapor deposition equipment (PECVD) has a relatively low plasma density, so that there is no significant problem in maintaining the temperature of the substrate even during the process of a large-area substrate. However, the inductively coupled plasma chemical vapor deposition (ICPCVD) using a relatively high process temperature causes the substrate to warp due to the high temperature, and an electrostatic chuck (ESC) is used to fix the entire surface of the substrate do.

One end is connected to the lower surface of the electrostatic chuck electrode 371 and the other end is connected to the second matching device 391 to transmit the bias high frequency power to the electrostatic chuck electrode 371 by the second high frequency power source 392 A connecting member 393 may be included.

The coupling member 393 may be formed with a coupling groove 394 so that the coupling height of the coupling member 393 with respect to the second matching unit 391 can be changed in accordance with the height of the support base 370.

 Since the showerhead 360 is disposed in the process chamber 350 and is divided into the first region 361 and the second region 362, the ICPVD method of the present invention can reduce the deposition rate and the deposition rate of the deposited thin film The quality can be lower than that of general inductively coupled plasma chemical vapor deposition equipment (ICPCVD).

 In order to increase the deposition rate and the quality of the deposited thin film, the bias power is applied to the electrostatic chuck electrode 371 by using the second high frequency power source 392, thereby increasing the deposition rate and the thin film robustness.

The support base 370 includes an insulating case 374 surrounding the electrostatic chuck electrode 371 except for the upper portion of the electrostatic chuck electrode 371 and an insulating case 374 for insulating the electrostatic chuck electrode 371 from the plasma. Grounded electrodes 375 may be included.

The ground electrode 375 may include a height changing means 395 which can change the height of the supporting table 370. The height of the supporting table 370 may be changed by the height changing means to improve the deposition distribution of the substrate .

<Experimental Example>

In order to evaluate the performance of the inductively coupled plasma chemical vapor deposition apparatus employing the showerhead according to the present invention, a test was performed aiming at a deposition rate of SiNx thin film of not less than 500 Å / min and a deposition distribution of not more than ± 10%.

Tables 1 and 12 show test data on the plasma deposition apparatus of the present invention.

The size of the showerhead according to the present experimental example is 1425 mm x 2000 mm, and a plurality of 3264 through holes having a diameter of 20 mm are formed as the upper side plate structure according to the first embodiment. The gap between the through holes is 28 mm x 28 mm, and is configured to cover the entire substrate to be processed. The second injection hole is formed in the same manner as the lower valve element structure according to the second embodiment. The distance from the top of the electrostatic chuck electrode to the bottom of the dielectric window was set to 200 mm. The pressure inside the chamber was maintained at 12 mTorr, SiH4 and NH3 were used as the reaction gas for the plasma treatment, and a power of 13.56 MHz of 6 kW was applied for the plasma reaction, and the reaction proceeded for 120 seconds.

A substrate having a size of 925 mm × 1500 mm was used as a substrate to be processed, and the position of the substrate as shown in FIG. 12 was measured to calculate the deposition rate and the deposition distribution.

Table 1 shows the results of measurement of the deposition thickness in each region.

Sample number Thickness (Å) Deposition rate (Å / min) Deposition distribution (%) One 1197.74 589.95 9.93% 2 1208.78 3 1186.24 4 1206.25 5 1239.17 6 1262.29 7 1239.9 8 1231.88 9 1235.7 10 1224.4 11 1028.03 12 1044.45 13 1033.92

The deposition rate and the distribution of deposition were calculated to be 589.95 Å / min and the deposition distribution of ± 9.93%, respectively. The deposition rate and the deposition distribution were both achieved in the test target.

As described above, the showerhead for an intense equipment of the present invention includes a showerhead having a plurality of through-holes and a main gas supply unit disposed between a support frame and a frame to generate a first plasma for a process in a first area, The radicals generated by the first plasma are transferred to the second processing region through the plurality of through holes of the showerhead and are reacted together with the main gas injected from the showerhead to deposit on the substrate to be processed, Head.

It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

400: body 401: upper plate
402: a plurality of through holes 501: a lower plate
502: main gas injection port 503: main gas passage
504: Inlet port 505: Inlet port
506: air outlet 507, 508:
509: Main gas supply unit 510:
511: sealing groove 512: sealing member

Claims (16)

A shower head for a deposition apparatus,
Body;
A plurality of through holes formed in a face of the body to allow the source gas generated at one side to pass to the other side; And
And a main gas supply unit including a plurality of main gas injection holes and a main gas passage formed in the body and configured to supply main gas to the other side of the body,
Wherein the plurality of main gas injection orifices have at least one inclined surface in which an inlet and an outlet are formed in an inward direction,
Wherein the plurality of main gas injection ports are divided by an inner region, an intermediate region, and an outer region with respect to a chamber plane by the main gas passage, the outer gas region is further divided into an edge region, a short side region and a long side region,
Wherein the body is disposed closer to a supporting portion for supporting a substrate to be processed than a plasma generating portion for generating plasma. delete The method according to claim 1,
Wherein the source gas is radical and reacts with the main gas at the other side of the body to deposit. The method according to claim 1,
Wherein the main body is provided with at least two individual plates, and the main gas passage of the main gas supply part is disposed between the individual plates. The method according to claim 1,
Dividing each of the plurality of main gas injection openings into a plurality of groups,
Wherein the plurality of groups are connected to the main gas passage at uniform intervals, The method according to claim 1,
Wherein the main gas passage has an inlet at a side surface of the body. The method according to claim 1,
Wherein the main gas passage is supplied with gas from two or more inlets. delete The method according to claim 1,
Wherein the plurality of main gas ejection openings are closed downward ejection openings. The method according to claim 1,
Wherein the plurality of main gas ejection openings are arranged at regular intervals. delete The method according to claim 1,
Wherein the plurality of through-holes are disposed at a uniform interval. 13. The method of claim 12,
Wherein the plurality of through holes are formed with a plurality of first through holes having a larger diameter and a plurality of second through holes having a smaller diameter. 14. The method of claim 13,
Wherein the plurality of first through holes having a larger diameter are arranged at the outermost portion and the plurality of second through holes having a smaller diameter are regularly arranged inside the outermost portion. 14. The method of claim 13,
Wherein the plurality of first through-holes having a large diameter are arranged at a portion corresponding to the edge of the substrate to be processed, and a plurality of second through holes having the small-diameter are arranged at the remaining portion. delete

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