KR20160047783A - Multiband 2-port antenna - Google Patents

Multiband 2-port antenna Download PDF

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Publication number
KR20160047783A
KR20160047783A KR1020140144144A KR20140144144A KR20160047783A KR 20160047783 A KR20160047783 A KR 20160047783A KR 1020140144144 A KR1020140144144 A KR 1020140144144A KR 20140144144 A KR20140144144 A KR 20140144144A KR 20160047783 A KR20160047783 A KR 20160047783A
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South Korea
Prior art keywords
radiating element
parasitic element
parasitic
radiating
antenna
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KR1020140144144A
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Korean (ko)
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KR101632275B1 (en
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오경섭
김영필
김상진
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주식회사 감마누
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Priority to KR1020140144144A priority Critical patent/KR101632275B1/en
Priority to PCT/KR2015/008881 priority patent/WO2016064080A1/en
Publication of KR20160047783A publication Critical patent/KR20160047783A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/52Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements

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Abstract

The present invention relates to a multi-band antenna, including a ground plate, a first radiating element of an inverted-F type formed on the ground plate, a second radiating element of a reverse- A first radiating element of F (Inverted-F) type, a first parasitic element formed at a predetermined distance from one end of the first radiating element and the second radiating element, and a second parasitic element And a second parasitic element formed spaced apart from the first parasitic element.

Description

Multi-band two-port antenna {MULTIBAND 2-PORT ANTENNA}

BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to a multi-band antenna, and more particularly, to a multi-band two-port antenna having an excellent isolation effect.

In recent years, the use of multiple frequency bands in antennas has become commonplace. As the wireless communication technology has developed, the 4G LTE (Long Term Evolution) used in Korea has developed a multi input multi output (MIMO) antenna . In such a MIMO antenna, a plurality of antennas are indispensably used to provide a service of multiple frequency bands, thereby causing interference between the antennas. If interference occurs between the antennas, radiation patterns of the antennas may be distorted, or unintended mutual coupling phenomena may occur between the antennas, so that securing an isolation level between the antennas is becoming an important issue.

In order to secure the isolation of the antennas, a method of arranging the antennas while keeping the distances between the antennas at a certain distance or more has been used. However, due to the problem of the internal space of the mobile communication devices, these methods are no longer available . Therefore, recently, a method of forming a wall by arranging a separation part for securing the isolation between the antenna and the antenna, or forming a ground wall by changing the ground structure is used. However, as a MIMO antenna used for 4G LTE In order to implement a multi-band antenna, two or more antennas must be disposed in a space smaller than half a wavelength, so that the space constraint is considerably larger than that of other antennas. do.

Korean Patent Publication No. 10-2013-0088289 (Aug. 2013)

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a multi-band antenna having an excellent isolation effect.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

The multi-band antenna according to an embodiment of the present invention includes a ground plate, a first radiating element of an inverted-F type formed on the ground plate, a second radiating element formed symmetrically with the first radiating element, A second radiating element of an inverted-F (Inverted-F) type, a first parasitic element formed at a predetermined distance from one end of the first radiating element and the second radiating element, And a second parasitic element spaced apart from the first parasitic element by a predetermined distance.

The semiconductor device may further include a third parasitic element formed adjacent to the second parasitic element.

In addition, the first radiating element and the second radiating element may include openings.

The first parasitic element may be formed in a loop type.

The second parasitic element may include a 2-1 parasitic element part formed at a predetermined angle with the ground plate and a 2-2 parasitic element part formed at one end of the 2-1 parasitic element.

The first parasitic element may include an opening, and may be formed at a predetermined angle with the ground plate between the first radiating element and the second radiating element.

In addition, the first parasitic element may be formed in a slot type in the ground plate between the first radiating element and the second radiating element.

The third parasitic element may be formed on the rear surface of the second parasitic element, and may be formed at a predetermined angle with the ground plate.

The first radiating element may further include a tuning element extending from one surface of the first radiating element.

INDUSTRIAL APPLICABILITY According to the present invention, an excellent isolation degree is secured in a multi-band antenna, so that it is possible to downsize the antenna size.

In addition, since it can cover both the low frequency band and the high frequency band, it is possible to provide a multi-band antenna suitable for 4G LTE communication network.

The effects of the present invention are not limited to the above-mentioned effects, and various effects can be included within the range that is obvious to a person skilled in the art from the following description.

FIG. 1 is a front view of a multi-band antenna according to an embodiment of the present invention. Referring to FIG.
FIG. 2 is a side view of a multi-band antenna according to an embodiment of the present invention. Referring to FIG.
3 and 4 are views showing a multi-band antenna according to another embodiment of the present invention.
FIG. 5 is a graph illustrating an isolation diagram of a multi-band antenna according to an exemplary embodiment of the present invention. Referring to FIG.
6 is a graph illustrating VSWR of a multi-band antenna according to an exemplary embodiment of the present invention measured at a first feeder.
7 is a graph illustrating VSWR of a multi-band antenna according to an exemplary embodiment of the present invention measured at a second feeder.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. The embodiments described above are provided so that those skilled in the art can easily understand the technical idea of the present invention and thus the present invention is not limited thereto and the detailed description of the related known structure or function may be considered to blur the gist of the present invention Detailed description thereof will be omitted.

In the drawings, the same or similar elements are denoted by the same reference numerals, and the same reference numerals are used throughout the drawings to refer to the same or like elements. It should be noted that the elements have the same reference numerals as much as possible even if they are displayed on different drawings.

In addition, the expression " comprising " is intended to merely denote that such elements exist as an 'open expression', and should not be understood as excluding additional elements.

FIG. 1 is a front view of a multi-band antenna 100 according to an embodiment of the present invention. Referring to FIG.

The multiband antenna 100 includes a ground plate 10, a first radiating element 20, a second radiating element 30, a first parasitic element 40 and a second parasitic element 50.

1, an octagonal ground plate 10 can be identified. However, the ground plate 10 may have various shapes depending on the shape and arrangement of the antenna elements formed on the ground plate 10, . It is preferable that the ground plate 10 has a minimum of extra space between one end of the ground plate 10 and the antenna element formed in the vicinity of the one end in order to miniaturize the overall antenna size.

 1, a first radiating element 20 of an inverted F antenna type is connected to the ground plate 10, and a first radiating element 20 is formed on a part of the ground plate 10, As shown in Fig.

The first radiating element 20 may be formed of a conductive material and may have various lengths depending on the frequency of transmission and reception. The first radiating element 20 may be formed of various types of antennas. When the first radiating element 20 is formed of a planar inverted F antenna as shown in FIG. 1, An opening 21 on the radiating element for transmitting and receiving multiple frequency bands and a supporting part such as a plastic rod for holding and fixing can be formed. Herein, the first radiating element 20 can be configured to transmit and receive multiple frequency bands by controlling the formation position, length, and area of the opening 21, The first frequency band (698 to 960 MHz) and the second frequency band (1.710 to 2.688 GHz) are satisfied.

Meanwhile, the first radiating element 20 may further include a tuning element 22 capable of performing frequency matching. Referring to FIG. 1, a plurality of tuning elements 22 extending from one surface of the first radiating element 20 can be identified, and frequency matching can be performed by adjusting the position, number, and length of the tuning element 22 . The forming method, forming position, number and length of the tuning element 22 can be variously adjusted as needed.

Finally, the first radiating element 20 receives the feed signal through the first feeder 24. The first feeder 24 can transmit a feed signal to the first radiator 20 using a feed cable, and various kinds of feed means such as a coaxial cable can be used.

Similarly, a second radiating element 30 may be formed on a part of the ground plate 10. Specifically, the second radiating element 30 may be formed at a symmetrical position spaced apart from the first radiating element 20 by a predetermined distance. Referring to FIG. 1, a flat (patch) inverted-F antenna type second radiating element 20 having a shape symmetrical with a first radiating element 20 of a flat plate (patch) (30) is formed at a position symmetrical to the position where the first radiating element (20) is formed. Other features such as the opening, support and tuning element of the second radiating element 30 are the same as those of the first radiating element 30 described above. However, in the case of power feeding, the power feed signal is received through the second power feeder 34 separately from the first power feeder 24.

As described above, the first radiating element 20 and the second radiating element 30, which are symmetrical to each other, are formed at symmetrical positions on the ground plate 10, so interference may occur between the two radiating elements . In this case, the radiation patterns of the two radiating elements are distorted due to interference, or isolation is required to prevent unintended mutual coupling phenomena. Hereinafter, the first parasitic element 40, the second parasitic element 50, and the third parasitic element 60 for ensuring isolation will be described with reference to FIG.

FIG. 2 is a side view of a multi-band antenna 100 according to an embodiment of the present invention. FIGS. 3 and 4 illustrate a multi-band antenna 100 according to another embodiment of the present invention. FIG.

The first parasitic element 40 is formed on a part of the ground plate 10 in order to ensure isolation between the first radiating element 20 and the second radiating element 30. In this case, as shown in FIG. 3, the first parasitic element 40 can be formed as a wall type between the first radiating element 20 and the second radiating element 30 to secure an isolation degree. However, Can also be formed by the method. Referring to FIG. 2, it can be seen that the first parasitic element 40 is formed at a predetermined distance from one end of the first radiating element 20 and one end of the second radiating element 30. Specifically, the first parasitic element plays a role of securing the isolation degree in the first frequency band (698 to 960 MHz), which is the low frequency band covered by the first and second radiating elements (20, 30). Specifically, since the first frequency band (698 to 960 MHz) is a low frequency band, the length of the antenna is inevitably long, and the radiating element on the upper side is formed with respect to the opening 21 of the first radiating element 20 1-1 radiating element section 22 and the lower radiating element is called a 1-2 radiating element section 23 in order to ensure a sufficient antenna length value in the first frequency band (698 to 960 MHz) It is necessary to use both the first radiating element section 22 and the first radiating element section 23, In this case, the total length of the first-first radiating element section 22 and the first-second radiating element section 23 is? / 4. On the other hand, the H-field coupling prevents a strong current from flowing into the first radiating element portion 22 and influences the current flowing directly to the second radiating element 30 through the ground The first parasitic element 40 is formed. That is, if a part of the current flowing through the ground flows into the first parasitic element 40, a part of the total current flowing into the ground can be canceled, and as a result, the degree of isolation can be increased. In addition, when the first parasitic element 40 is formed as shown in FIG. 2, the space of the first parasitic element 40 is smaller than that of the first parasitic element 40, so that other antenna elements formed on the ground plate 10 can be arranged efficiently.

Further, the first parasitic element 40 can be formed in a loop type. When the first parasitic element 40 is formed in a loop type, a strong current flowing through the 1-1 radiating element portion 22 of the first radiating element 2 by the H-field coupling described above is grounded The second radiating element 30 can be prevented from flowing into the second radiating element 30, and the second radiating element 30 can be more effectively coupled. Therefore, for effective coupling, the first parasitic element 40 is required to be formed higher than the height of the first and second radiating elements 20, 30 and not to contact with each other. If the first parasitic element is formed as a loop type, it may further include a support for fixing and supporting the ground plate 10.

If the first parasitic element 40 is formed as a wall type between the first radiating element 20 and the second radiating element 30 as shown in FIG. 3, the first parasitic element 40 may be formed as a wall type including a loop The first parasitic element 40 may be formed at a predetermined angle with respect to the ground plate 10 in place of the loop, (Slot) type.

The second parasitic element 50 is also formed on a part of the ground plate 10 in order to secure the isolation between the first radiating element 20 and the second radiating element 30. Referring to FIG. 2, it can be seen that the second parasitic element 50 is formed at a predetermined distance from the other end of the first radiating element 20 and the second radiating element 30. That is, when the ground plate 10 is taken as a reference, the second parasitic element 50 may be formed at a position opposite to the position where the first parasitic element 40 is formed. For example, if the first parasitic element 40 is formed at the 12 o'clock position of the ground plate 10, the second parasitic element 50 is preferably formed at 6 o'clock, It is preferable that the second parasitic element 50 is formed at the 9 o'clock position if the first parasitic element 50 is formed at the 3 o'clock direction of the ground plate 10. [ Hereinafter, the reason will be described in detail.

 In order to secure a sufficient antenna length value in the first frequency band (698 to 960 MHz) which is a low frequency band, the first to fifth radiating element portions 22 and 23, including the opening portion 21, All of them should be used. In this case, unlike the first radiating element 22, a high voltage is formed in the first radiating element 23 by the E-field coupling. A second parasitic element 50 is formed to prevent this voltage from directly affecting the second radiating element 30. That is, if a part of the voltage is transferred to the second parasitic element 50 by the coupling effect, a part of the total voltage can be canceled, and as a result, the degree of isolation can be increased.

2, the second parasitic element 50 is formed in a bar type rather than a loop type, unlike the first parasitic element 40, which is formed by the first and second radiating elements 20 and 30 ). ≪ / RTI > That is, since the distance between one ends of the first and second radiating elements 20 and 30 in which the first parasitic elements are formed is closer to the distance between the other ends of the first and second radiating elements 20 and 30 in which the second parasitic elements are formed , The first parasitic element 40 is formed in a loop type, and the second parasitic element 50 is formed in a bar type. However, FIG. 2 is only one embodiment of the radiating element arrangement, and it is needless to say that the second parasitic element 50 can also be formed in a loop type in consideration of the distance between the radiating elements.

The second parasitic element 50 includes a second 1-1 parasitic element portion 51 formed at a predetermined angle with the ground plate in consideration of the coupling effect between the first radiating element 20 and the second radiating element 30 And a 2-2 parasitic element part 52 formed at one end of the 2-1 parasitic element part. Referring to FIG. 2, it can be seen that the second-2 parasitic element part 52 is formed at both ends of the second-1 parasitic element part 51. [ In this case, since the distance between the second-2 parasitic element section 52 and the first and second radiating elements 20 and 30 becomes close to each other, a coupling effect can be more easily generated. However, this is not essential, and it is needless to say that the second parasitic element part 52 can be formed only by the second parabolic element part 51 without forming the second parasitic element part 52.

As described above, the first parasitic element 40 and the second parasitic element 50 are responsible for ensuring isolation of the first frequency band (698 MHz - 960 MHz), which is a low frequency band. FIG. 5 is a graph illustrating the isolation of a multi-band antenna according to an exemplary embodiment of the present invention. Referring to FIG. Considering the isolation observed in the first frequency band (698-960 MHz), it shows -16.4 dB at 695 MHz, and then increases steadily to -28.3 dB at 960 MHz. It can be said that the degree of isolation of the general multi-band antenna 100 is secured as compared with the isolation degree of -9 to -10 dB.

Finally, a third parasitic element 60 for securing isolation is formed in a part of the ground plate 10. Referring to FIG. 2, it can be seen that the third parasitic element 60 is formed adjacent to the second parasitic element 50.

The third parasitic element 60 secures the isolation degree in the second frequency band (1.710 to 2.688 GHz), which is the high frequency band, unlike the first parasitic element 40. Specifically, the second frequency band (1.710 to 2.688 GHz) uses only the first radiating element portion 22 of the first radiating element 20, and in this case, the length of the first radiating element portion 22 (Including the length of the tuning element when the tuning element is formed) becomes 3? / 4. This is because almost all of the current is radiated before the current flows into the first to second radiation element portions 23. Therefore, in the second frequency band (1.710 to 2.688 GHz), the first parasitic element does not play an important role in securing the isolation. Therefore, the second parasitic element 50 secures the isolation degree in a part of the second frequency band (1.710 to 2.688 GHz) in addition to the first frequency band (698 to 960 MHz). The third parasitic element 60 is formed adjacent to the second parasitic element 50 so that the frequency component is not transmitted from the first radiating element 20 to the second radiating element 30, Additional isolation can be obtained in the frequency range (1.710 to 2.688 GHz). 2, the third parasitic element 60 is formed on the rear surface of the second parasitic element 50 at a predetermined angle with the ground plate 10, wherein the third parasitic element 60 is a monopole It may be an antenna type parasitic element.

As described above, the second parasitic element 50 and the third parasitic element 60 are responsible for ensuring isolation of the second frequency band (1.710 to 2.688 GHz), which is a high frequency band. As can be seen from FIG. 5, the isolation performance measured at the second frequency band (1.710 to 2.688 GHz) shows -22.9 dB at 1.710 GHz, while maintaining the isolation level at -20 dB or less, And -25.4 dB in GHz. It can be said that this also secures a significantly higher degree of isolation than the isolation of the general multi-band antenna 100.

6 and 7 are graphs illustrating VSWR (Voltage Standing Wave Ratio) of a multi-band antenna 100 according to an exemplary embodiment of the present invention. And 7 is a value measured at the second feeder 30. [ In this case, we can confirm that VSWR is 1.55, 1.36 at 1.26, 1.36, 2.688 GHz at 1.68, 1.55, and 1.710 GHZ respectively at 1.57, 1.60, and 690 MHz at 698 MHz, respectively. This is a fairly good result, and the frequency matching is almost complete.

The multi-band antenna 100 according to an embodiment of the present invention described above may include first and second radiating elements 20 and 30 formed at symmetrical positions spaced apart from each other by a predetermined distance in a symmetrical manner, The first to third parasitic elements 40, 50 and 60 formed at the positions of the first to third parasitic elements 40, 50 and 60 can secure a high degree of isolation. This makes it possible to miniaturize the overall size of the antenna. In addition, it can be applied to 4G LTE, and it can be used as an antenna for in-building installation inside a building.

The embodiments of the present invention described above are disclosed for the purpose of illustration, and the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

10: Ground plate
20: first radiating element 21: opening
22: 1-1 radiating element part 23: 1-2 spinning element part
24: First class all part
30: second radiating element
34: Second class all parts
40: first parasitic element 50: second parasitic element
51: 2-1 parasitic element part 52: 2-2 parasitic element part
60: Third parasitic element
100: multi-band antenna

Claims (9)

Ground plate;
A first radiating element of an inverted-F type formed on the ground plate;
A second radiating element of an inverted-F type formed at a predetermined interval in a symmetrical manner with the first radiating element;
A first parasitic element formed at a predetermined distance from one end of the first radiating element and the second radiating element; And
A second parasitic element formed at a predetermined distance from the other end of the first radiating element and the second radiating element;
Band antenna < RTI ID = 0.0 >
The method according to claim 1,
And a third parasitic element formed adjacent to the second parasitic element.
The method according to claim 1,
Wherein the first radiating element and the second radiating element comprise:
Band antenna comprising an aperture
The method according to claim 1,
Wherein the first parasitic element comprises:
Band type antenna is formed in a loop type.
The method according to claim 1,
Wherein the second parasitic element comprises:
A 2-1 parasitic element part formed at an angle with the ground plate; And
A 2-2 parasitic element formed at one end of the 2-1 parasitic element;
Band antenna < RTI ID = 0.0 >
The method according to claim 1,
Wherein the first parasitic element comprises:
Comprising an opening,
And the antenna is formed at a predetermined angle with the ground plate between the first radiating element and the second radiating element.
The method according to claim 1,
Wherein the first parasitic element comprises:
And a slot antenna formed on the ground plate between the first radiating element and the second radiating element.
3. The method of claim 2,
The third parasitic element includes:
A second parasitic element formed on a rear surface thereof,
And the antenna is formed at a predetermined angle with the ground plate.
The method according to claim 1,
Wherein the first radiating element comprises:
Further comprising a tuning element extending from one surface of the first radiating element
KR1020140144144A 2014-10-23 2014-10-23 Multiband 2-port antenna KR101632275B1 (en)

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KR1020140144144A KR101632275B1 (en) 2014-10-23 2014-10-23 Multiband 2-port antenna
PCT/KR2015/008881 WO2016064080A1 (en) 2014-10-23 2015-08-25 Multiband two-port antenna

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Application Number Priority Date Filing Date Title
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102097049B1 (en) * 2019-05-17 2020-04-03 주식회사 이엠따블유 Anttena module and vehicle having the same
KR102104907B1 (en) * 2020-01-28 2020-05-29 주식회사 알씨엔 8x8 Integrated Multi User MIMO Antenna
KR102206670B1 (en) * 2019-10-11 2021-01-22 (주)휴맥스 Antenna assembly and method of providing frequency adaptive isolation

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KR20040004285A (en) * 2003-12-13 2004-01-13 학교법인 한국정보통신학원 Internal Multi-Band Antenna with Multiple Layers
KR20090093120A (en) * 2008-02-28 2009-09-02 한양대학교 산학협력단 MIMO Array Antenna for Adaptive Isolation
KR20130088289A (en) 2012-01-31 2013-08-08 공성호 Antenna assembly for updating isolation degree
KR20130102170A (en) * 2012-03-07 2013-09-17 주식회사 팬택 Mobile communication terminal with improved isolation

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US9306276B2 (en) * 2011-07-13 2016-04-05 Qualcomm Incorporated Wideband antenna system with multiple antennas and at least one parasitic element
KR101252244B1 (en) * 2011-09-02 2013-04-09 주식회사 이엠따블유 Multi antenna

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040004285A (en) * 2003-12-13 2004-01-13 학교법인 한국정보통신학원 Internal Multi-Band Antenna with Multiple Layers
KR20090093120A (en) * 2008-02-28 2009-09-02 한양대학교 산학협력단 MIMO Array Antenna for Adaptive Isolation
KR20130088289A (en) 2012-01-31 2013-08-08 공성호 Antenna assembly for updating isolation degree
KR20130102170A (en) * 2012-03-07 2013-09-17 주식회사 팬택 Mobile communication terminal with improved isolation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102097049B1 (en) * 2019-05-17 2020-04-03 주식회사 이엠따블유 Anttena module and vehicle having the same
KR102206670B1 (en) * 2019-10-11 2021-01-22 (주)휴맥스 Antenna assembly and method of providing frequency adaptive isolation
KR102104907B1 (en) * 2020-01-28 2020-05-29 주식회사 알씨엔 8x8 Integrated Multi User MIMO Antenna

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