KR20160035781A - Gas sensor array - Google Patents

Gas sensor array Download PDF

Info

Publication number
KR20160035781A
KR20160035781A KR1020140127519A KR20140127519A KR20160035781A KR 20160035781 A KR20160035781 A KR 20160035781A KR 1020140127519 A KR1020140127519 A KR 1020140127519A KR 20140127519 A KR20140127519 A KR 20140127519A KR 20160035781 A KR20160035781 A KR 20160035781A
Authority
KR
South Korea
Prior art keywords
heating
sensing
gas sensor
sensor array
electrode patterns
Prior art date
Application number
KR1020140127519A
Other languages
Korean (ko)
Inventor
박준식
박광범
Original Assignee
전자부품연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 전자부품연구원 filed Critical 전자부품연구원
Priority to KR1020140127519A priority Critical patent/KR20160035781A/en
Publication of KR20160035781A publication Critical patent/KR20160035781A/en

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/78—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
    • G01N21/783—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour for analysing gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electrochemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

The present invention relates to a gas sensor array capable of sensing various types of gases. The gas sensor array is able to perform a normal gas detecting operation by enabling power to normally be supplied to other heating electrode patterns even if a part of the heating electrode patterns formed on a membrane is damaged. A membrane layer is formed on an upper part of a silicone substrate wherein a part is etched. A plurality of heating electrode pads, the heating electrode patterns extended from each heating electrode pad, and a plurality of heating units heated by the power supplied by each heating electrode patterns are formed on the upper part of the membrane layer. A plurality of detection layers enclosing a detection electrode pattern and a part of the detection electrode pattern are formed on an upper part of an insulation layer enclosing the heating units and the heating electrode patterns. Each of the heating units is connected to the heating electrode patterns in a row in order for the power in a parallel method to be supplied to the heating units.

Description

Gas sensor array {GAS SENSOR ARRAY}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor micro gas sensor, and more particularly, to a gas sensor array capable of sensing various types of gases.

Gas sensors are classified into solid electrolyte, contact combustion, electrochemical, and semiconductor type. Recently, most of them have been studied as semiconductor type micro gas sensor. This is because the semiconductor type micro gas sensor is manufactured or integrated on a silicon chip, so that it is excellent in compatibility with a general IC, can be manufactured at a low cost, and exhibits high-efficiency operation characteristics.

The semiconductor micro gas sensor detects the presence or absence of gas above a predetermined concentration by measuring a change in electric conductivity of the sensing material when the specific gas is adsorbed on the sensing material of the gas sensor.

1 is a cross-sectional view of a semiconductor micro gas sensor. As shown in the figure, a semiconductor type micro gas sensor has a first insulating film 21 formed on a silicon substrate 10 from which a central region 11 is removed, and a second insulating film A heating electrode pattern 30 is formed on the first insulating film 21 floating in the central region 11 of the removed silicon substrate and covers the heating electrode pattern 30, An insulating film 40 is formed on the first insulating film 21. A sensing electrode pattern 50 is formed on the insulating film 40 of the central region 11 of the removed silicon substrate, A sensing layer 60 is formed on the insulating layer 40 to surround the pattern 50.

In the semiconductor micro gas sensor having such a structure, since the specific gas must be maintained at a specific temperature or higher in order to be adsorbed to the sensing film 60 of the micro gas sensor, the heating electrode pattern 30 formed on the first insulating film 21, Generates heat to a temperature at which the sensing film 60 can exhibit optimal sensitivity. When the sensing film 60 heated to a predetermined temperature by the heating electrode pattern 30 is exposed to the gas, the gas adsorbs to the metal oxide of the sensing film 60 to cause a reaction, . At this time, a change in resistance of the metal oxide generated by the gas adsorption is detected by the sensing electrode pattern 50 to detect a specific gas.

The semiconductor micro gas sensor having such a structure is used for efficiently discharging the heat generated in the heating electrode pattern 30 in the central region of the silicon substrate 10 at the position where the heating electrode pattern 30 is formed, (Membrane) structure in which the membrane 11 is removed.

Since the conventional semiconductor micro gas sensor configured as described above detects one kind of gas, it is necessary to use a module composed of a plurality of gas sensor elements in order to detect various kinds of gas. In this case, a plurality of gas sensor elements It is disadvantageous in that the mounting density is lowered due to the complicated circuit configuration, the volume is increased, and the power consumption is also increased.

To solve these drawbacks, there is a "micro gas sensor array and its manufacturing method (Patent Registration No. 10-0843169) filed and registered by the present applicant ". As shown in FIG. 2, the present exemplary embodiment includes a plurality of sensing materials 150, which change the electric conductivity of the sensing material 150 by contacting with a gas on one substrate, a plurality of sensing materials 150 that transmit a change in the electrical conductivity of the sensing material 150 to the outside The sensing electrode patterns 141 and 142 are formed and the heating electrode patterns 120 are formed to simultaneously heat the plurality of sensing materials 150 and the ground electrode patterns 160 are formed so that the sensing electrode patterns 141 and 142 are commonly grounded. .

In this exemplary patent, since the heating electrode pattern 120 simultaneously heats a plurality of sensing materials 150, consumption of power consumption can be reduced, and the plurality of sensing electrode patterns 141 and 142 can be commonly grounded, Since the same kind of gas and multiple gases can be detected through a plurality of gas sensors, it is possible to increase the reliability of gas measurement. However, since the heating electrode pattern 120 passes under a plurality of sensing materials 150, When the heating electrode pattern 120 is broken, there occurs a problem that the gas sensing operation is not performed in the plurality of sensing materials 150 positioned at the rear end.

In addition, since the sensing material 150 is located adjacent to the sensing material 150, thermal interference may occur between the adjacent sensing materials 150, thereby deteriorating gas sensing accuracy. In addition, a plurality of sensing materials must be prepared according to the type of gas to be sensed It is holding.

Korean Patent Publication No. 10-0843169

SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems, and it is an object of the present invention to provide a method for detecting a gas, The present invention relates to a gas sensor array,

Still another object of the present invention is to provide a gas sensor array capable of minimizing the transfer of heat between adjacent sensing units, thereby enhancing gas sensing precision.

It is another object of the present invention to provide a gas sensor array capable of sensing various gases by forming a plurality of sensing units made of metal oxides and adjusting the sensing sensitivity according to the gas types by heating the sensing units at different operating temperatures.

According to an aspect of the present invention, there is provided a gas sensor array including:

A plurality of heating electrode pads, heating electrode patterns extending from the heating electrode pads, and a power source supplied through the heating electrode patterns are provided on the membrane layer, And a plurality of sensing films are formed on the upper portion of the insulating layer surrounding the heating electrode patterns and the plurality of heating portions,

Wherein each of the plurality of heating units is connected in parallel with the heating electrode patterns so that the parallel heating power is supplied to the plurality of heating units,

Further, the gas sensor array further includes a heat blocking hole penetrating the membrane layer and the insulating layer between the adjacent heating units to block heat transfer between adjacent heating units .

As another modified embodiment, in order to minimize the heat generated in the heating unit of the gas sensor array from flowing out to the outside through the membrane layer, Can be further formed.

In the above-described gas sensor arrays, the plurality of heating units are heated to different operating temperatures,

Wherein the plurality of heating units use a platinum material to minimize deterioration due to an oxidation reaction of the sensing film at a high temperature operation,

One sensing electrode pattern of the pair of sensing electrode patterns extends from the common electrode pad and branches to each sensing film and the remaining sensing electrode pattern extends from each sensing membrane and is connected to the respective sensing electrode pads.

The sensing material used for the sensing layer is a semiconductor metal oxide mixed with a noble metal additive.

According to the above-mentioned problem solving means, the gas sensor array of the present invention adopts the method of connecting each of the plurality of heating portions in parallel with the heating electrode patterns, so that even if a part of the heating portion is broken and the power is cut off, It has the effect of gas detection by operating,

A heat shielding hole penetrating between the membrane layer and the insulating layer is formed between the adjacent heating portions to prevent mutual heat transmission between the adjacent heating portions 350, thereby enhancing gas sensing accuracy.

In addition, heat shielding is additionally formed in the vicinity of the heating part, thereby minimizing heat loss to the outside and minimizing the driving power consumption of the gas sensor.

Further, according to the present invention, since a plurality of sensing units made of metal oxide are formed and different operating temperatures of the sensing units are heated to detect various gases by adjusting the sensing sensitivity according to the gas types, It is possible to solve the inconvenience that must be done.

In addition, by bundling one sensing electrode pattern with a common electrode, the number of wire bonding can be minimized when the gas sensor array is wire-bonded packaged.

1 is a cross-sectional exemplary view of a semiconductor type micro gas sensor;
2 is a plan view of a micro gas sensor array shown in the exemplary patent.
3 is a plan view of a gas sensor array according to an embodiment of the invention.
4 is a cross-sectional exemplary view of a gas sensor array according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

3 illustrates a top view of a gas sensor array in accordance with an embodiment of the present invention, and FIG. 4 illustrates a cross-sectional view of a gas sensor array in accordance with an embodiment of the present invention.

Referring to FIGS. 3 and 4, a gas sensor array 300 according to an embodiment of the present invention includes a silicon substrate 310 on which a partially etched silicon substrate 310 is formed, The heating electrode patterns 330 extending from the heating electrode pads 330 and the heating electrode patterns 340 extending from the heating electrode pads 330 and the heating electrode patterns 340 are formed on the membrane layer 320, And a pair of sensing electrode patterns 360 are formed on the insulation layer 345 covering the heating electrode pattern 340 and the heating unit 350 and the sensing electrode patterns 360 A plurality of sensing films 370 (also referred to as sensing portions) are formed. For reference, the heating electrode window 335 shown in FIG. 4 shows a portion where the insulating layer 345 is opened to supply power to the heating electrode pad 330.

3, the gas sensor array 300 having the above-described configuration may be configured such that the parallel heating power is supplied to the plurality of heating units 350, Lt; RTI ID = 0.0 > 340 < / RTI >

3, the heating electrode pattern 340 extending from each of the pair of heating electrode pads 330 is connected to each heating unit 350 (not shown) to supply power to each of the plurality of heating units 350. That is, To the heating unit 350 in a manner that branches to the heating unit 350.

When each of the heating units 350 is connected in parallel with the heating electrode patterns 340, the remaining heating units 350 are connected in parallel to the power source, And has a characteristic capable of maintaining the operation continuously. It is preferable that the heating unit 350 is manufactured using a platinum material to minimize the deterioration due to the oxidation reaction of the sensing film 370 in a high-temperature operation.

For example, in order to minimize the use of gas sensing materials, various types of gas sensing materials must be used to detect various gases. However, in the embodiment of the present invention, the plurality of heating units 350 are heated to different operating temperatures, So that the gas can be detected.

For example, tin oxide (< RTI ID = 0.0 >

Figure pat00001
), Zinc oxide (ZnO), tungsten oxide (
Figure pat00002
), Titanium oxide (
Figure pat00003
) React with the gas to cause a resistance change. Semiconductor metal oxides are characterized in that the sensing sensitivity varies depending on the type of gas, and the sensitivity of gas detection varies depending on the operating temperature of one gas. For example, if tungsten oxide is used as the sensing material, the sensitivity to nitrogen dioxide gas is high at 450 ° C and low at 300 ° C, while sensitivity to HCHO gas is low at 450 ° C and vice versa at 300 ° C. Therefore, assuming that there are two sensors that react at 300 ° C and 400 ° C using the same sensing material, it is possible to distinguish between nitrogen dioxide gas and HCHO gas. Accordingly, in the embodiment of the present invention, the plurality of heating units 350 are heated to different operating temperatures so that various kinds of gases can be detected by the sensing film 370.

3, in order to block the heat transfer between the adjacent heating units 350, a heat shielding hole (not shown) penetrating the membrane layer 320 and the insulating layer 345 is formed between the adjacent heating units 350, (400). In addition, in order to minimize the heat generated in the heating unit 350 from flowing out to the outside through the membrane layer 320, as shown in the outside of the heating unit located outside the heating unit 350, 400) is further formed.

3, one of the pair of sensing electrode patterns 360 extends from the sensing unit common electrode pad 380, branches to each sensing layer 370, and the remaining sensing electrode patterns 360 360 extend from each sensing film 370 and are connected to the respective sensing electrode pads 390. By bundling one sensing electrode pattern as a common electrode, the number of wire bonding can be minimized when the gas sensor array is wire-bonded and packaged.

As shown in FIG. 4, each of the heating units 350 is located below the pair of sensing electrode patterns 360 and the sensing film 370 is positioned above the sensing electrode patterns 360, When the resistance of the sensing film 370 varies due to the sensing film 370 having different sensitivity characteristics, the resistance value of the sensing film 370 varies depending on the sensing electrode pattern 360 ). ≪ / RTI >

For reference, the sensing material used for the sensing film 370 may be a mixture of noble metal additives such as Pt and Pd in order to use a semiconductor metal oxide as described above or to minimize sensitivity to environmental factors such as sensitivity and temperature and humidity Semiconductor metal oxides may also be used.

As described above, according to the present invention, each of the heating units 350 is connected in parallel with the heating electrode patterns 340, so that even if a part of the heating unit is broken and the heating unit 350 is turned off, the remaining heating units 350 continuously It has the effect of gas detection by operating,

A heat shielding hole 400 passing through the membrane layer 320 and the insulating layer 345 is formed between the adjacent heating portions 350 to prevent mutual heat transfer between the adjacent heating portions 350, There is an effect that can be increased. In addition, by minimizing heat loss to the outside, the power consumption of the gas sensor can be minimized.

 While the invention has been shown and described with reference to certain embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined only by the appended claims.

Claims (7)

A plurality of heating electrode pads, heating electrode patterns extending from the heating electrode pads, and a power source supplied through the heating electrode patterns are provided on the membrane layer, And a plurality of sensing films are formed on the upper portion of the insulating layer surrounding the heating electrode patterns and the plurality of heating portions,
Wherein each of the plurality of heating portions is connected in parallel with the heating electrode patterns so that the parallel heating power is supplied to the plurality of heating portions.
2. The gas sensor array according to claim 1, further comprising: a heat shielding hole penetrating the membrane layer and the insulating layer between adjacent heating parts for shielding heat transfer between adjacent heating parts .
The heat shielding structure according to claim 2, further comprising: a heat shielding hole formed on an outer side of a heating unit located outside the plurality of heating units to minimize heat generated in the plurality of heating units from flowing out to the outside through the membrane layer Wherein the gas sensor array is a gas sensor array.
The gas sensor array according to any one of claims 1 to 3, wherein the plurality of heating portions are heated to different operating temperatures.
The gas sensor array according to any one of claims 1 to 3, wherein the plurality of heating units use a platinum material to minimize deterioration due to an oxidation reaction of the sensing film at high temperature operation.
The method of any one of claims 1 to 3, wherein one of the pair of sensing electrode patterns extends from the common electrode pad and branches to each sensing film, and the remaining sensing electrode pattern extends in each sensing film And is connected to an individual sensing electrode pad.
The gas sensor array according to any one of claims 1 to 3, wherein the sensing material used for the sensing film is a semiconductor metal oxide mixed with a noble metal additive.
KR1020140127519A 2014-09-24 2014-09-24 Gas sensor array KR20160035781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020140127519A KR20160035781A (en) 2014-09-24 2014-09-24 Gas sensor array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140127519A KR20160035781A (en) 2014-09-24 2014-09-24 Gas sensor array

Publications (1)

Publication Number Publication Date
KR20160035781A true KR20160035781A (en) 2016-04-01

Family

ID=55799141

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140127519A KR20160035781A (en) 2014-09-24 2014-09-24 Gas sensor array

Country Status (1)

Country Link
KR (1) KR20160035781A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107561121A (en) * 2016-07-01 2018-01-09 普因特工程有限公司 Miniature more array applicator devices and miniature more sensor arrays
KR20180024139A (en) * 2016-08-29 2018-03-08 전자부품연구원 Micro gas sensor and micro gas sensor module
KR20180024863A (en) * 2016-08-31 2018-03-08 엘지이노텍 주식회사 Gas sensing module and sensing device
KR20190009918A (en) * 2017-07-20 2019-01-30 엘지전자 주식회사 A semiconductor gas sensor
KR20190012373A (en) * 2017-07-27 2019-02-11 전자부품연구원 Gas sensor and gas sensor array having a heat insulating structure and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107561121A (en) * 2016-07-01 2018-01-09 普因特工程有限公司 Miniature more array applicator devices and miniature more sensor arrays
US10433370B2 (en) 2016-07-01 2019-10-01 Point Engineering Co., Ltd. Micro multi-array heater and micro multi-array sensor
KR20180024139A (en) * 2016-08-29 2018-03-08 전자부품연구원 Micro gas sensor and micro gas sensor module
KR20180024863A (en) * 2016-08-31 2018-03-08 엘지이노텍 주식회사 Gas sensing module and sensing device
KR20190009918A (en) * 2017-07-20 2019-01-30 엘지전자 주식회사 A semiconductor gas sensor
KR20190012373A (en) * 2017-07-27 2019-02-11 전자부품연구원 Gas sensor and gas sensor array having a heat insulating structure and manufacturing method thereof

Similar Documents

Publication Publication Date Title
US9170225B2 (en) Obtaining selectivity in gas sensors via a sensor array system composed of P and N type material
KR20160035781A (en) Gas sensor array
JP6335140B2 (en) Multi-function potentiometric gas sensor array with integrated temperature control and temperature sensor
EP2645091B1 (en) Integrated circuit comprising a gas sensor
KR100843169B1 (en) Micro gas sensor array and fabricating method the same
KR101135404B1 (en) Micro platform for gas sensor array
CN104807855A (en) Micro-electromechanical gas sensing device
CN107110802B (en) Sensor-based system and device
EP3449246B1 (en) Sensor
RU2718133C1 (en) Gas-sensitive detector
KR101431471B1 (en) Low power consumption type gas sensor
KR101268028B1 (en) Gas sensor
US9939397B2 (en) Sensor for detecting oxidizable gases
CN107727713B (en) Micro-sensor
US20100270595A1 (en) Device for Detection of a Gas or Gas Mixture and Method for Manufacturing Such a Device
US20210188625A1 (en) Semiconductor chip
JP2008545953A (en) Gas sensor array operating circuit device
US7295126B2 (en) Perforated plane moisture sensor
US11506624B2 (en) Capacitive gas sensors and manufacturing method thereof
KR101666572B1 (en) Hot sensor package
CN108155179B (en) Semiconductor device with gas detection function
JP4205601B2 (en) Carbon monoxide gas sensor and method for manufacturing P-type semiconductor
KR100783765B1 (en) Silicon carbide semiconductor gas sensor device and the manufacturing method
EP2793018A1 (en) Thermal conductivity based gas sensor
KR20190012373A (en) Gas sensor and gas sensor array having a heat insulating structure and manufacturing method thereof

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application