KR20150122544A - Method for manufacturing cylinder mold having micro pattern with slope cutting face, etching apparatus and etching method - Google Patents

Abstract

The present invention relates to a method for manufacturing a mold having a micro pattern of a diagonal etching cross section on a cylindrical surface, and an etching apparatus and an etching method. More specifically, the method for manufacturing a mold having a micro pattern of a diagonal etching cross section on a cylindrical surface is configured to etch a side wall of an etching pattern into a curve surface shape or to etch the side wall so that stepped portions are formed on the side wall, by controlling an irradiation direction of an ion beam in an etching process on the outer circumferential surface of the cylindrical mold. According to an embodiment of the present invention, the etching apparatus comprises: a cover for accommodating a cylindrical mold having a coated surface on which photoresist is coated and an exposed surface on which the photoresist is not coated; a supporter for supporting the cylindrical mold in the vertical direction; a rotation driving unit for rotating the cylindrical mold by transmitting rotation power to the supporter; a plurality of ion guns installed on the cover, and for forming an etching pattern on the exposed surface by emitting the ion beam onto the outer circumferential surface of the cylindrical mold through a bar-type opening portion formed in the longitudinal direction of the cylindrical mold; and a beam direction control unit for controlling an irradiation direction of the ion beam for the outer circumferential surface by rotating the ion guns in the vertical direction regarded as the axis in a process for forming the etching pattern so that the side wall of the etching pattern is etched into a curved surface or stepped portions are formed on the side wall.

Description

[0001] METHOD FOR MANUFACTURING CYLINDER MOLD HAVING MICRO PATTERN WITH SLOPE CUTTING FACE, ETCHING APPARATUS AND ETCHING METHOD [0002]

The present invention relates to a method of manufacturing a mold having a fine pattern of an oblique directional etching cross-section on a cylindrical surface, an etching apparatus and an etching method, and more particularly, to a method of etching a cylindrical mold by adjusting the irradiation direction of an ion beam To an etching apparatus and an etching method for a mold having a fine pattern of a slanting directional etching cross section on a surface of a cylinder on which side walls of the etching pattern are etched in a curved shape or a step is formed on a side wall.

In general, surface treatment using ions having energy is essential in the fields of semiconductor processing, MEMS and NEMS mass production, pattern transfer technology, and hard coating. Ion impact is used in various fields such as cleaning, activation of the substrate surface, change in wettability, improvement in hardness, deposition of various films, and semiconductor doping process by ion implantation.

Typically, all ion processing can be divided into the following two types. First, there is a method of extracting an ion beam from an ion source and sending it to a substrate placed at a certain distance in a vacuum chamber. This method transfers the ion beam and the substrate separately or at the same time to obtain the desired result, and the ion charge can be neutralized by the auxiliary electron emitter. Examples of such techniques include ion beam application deposition, ion beam etching or milling, and ion beam implantation. Second, there is a device in which a workpiece is placed in a plasma atmosphere and electrically biased to a certain negative potential. Here, the ions are accelerated to the inside of the sheath formed in front of the workpiece, and DC, RF, and bias supplied by pulses are used to induce such acceleration. PVD, PECVD, PI3D, RIE, etc. belong to this technical category.

Ion etching, that is, ion etching, which is one of such ion processing, is a method in which ions having energy are mainly irradiated on the surface of a workpiece in the form of a beam, and the surface is etched by sputtering. Many applications for ion processing include semiconductor processing, nanostructure formation, surface structure formation, and surface roughness improvement.

Conventionally, etching of a workpiece using such an ion beam has been mainly applied to a flat substrate. In recent years, direct imprinting using a cylindrical metal mold has been studied for patterning of a nanometer scale, It is also applied to molds.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method of manufacturing a mold having an oblique directional etching cross-section on a cylindrical surface of a cylindrical metal mold, the side wall of which has a curved side or a step, and which forms an etching pattern.

It is to be understood that the present invention is not limited to the above-described embodiments and that various changes and modifications may be made without departing from the spirit and scope of the present invention as defined by the following claims .

According to an aspect of the present invention, there is provided a semiconductor device comprising: a cover for accommodating a cylindrical mold having a coated surface to which a photoresist is applied and an exposed surface to which the photoresist is not applied; A pedestal supporting the cylindrical metal in a vertical direction; A rotation driving unit for transmitting rotation force to the pedestal to rotate the cylindrical mold; A plurality of ion guns provided on the cover and irradiating an ion beam to an outer peripheral surface of the cylindrical metal through a bar type opening formed in the longitudinal direction of the cylindrical metal mold to form an etching pattern on the exposed surface; And a beam direction for adjusting the irradiation direction of the beam with respect to the outer peripheral surface by rotating the ion gun about the vertical direction in the process of forming the etching pattern so that the side wall of the etching pattern is etched or etched with a step difference, And an adjusting unit may be provided.

According to another aspect of the present invention, there is provided a mold supporting apparatus comprising: a mold supporting unit for supporting a cylindrical mold having a coated surface to which a photoresist is applied and an exposed surface to which the photoresist is not applied; A rotation driving unit for transmitting rotation force to the mold support unit to rotate the cylindrical mold; A beam irradiating unit for irradiating the cylindrical mold with a beam so as to form an etched pattern on the exposed surface; And a beam direction adjusting unit for adjusting an irradiation direction of the beam irradiating unit to adjust an angle at which the sidewalls of the etching pattern are etched.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: rotating a cylindrical mold having a coated surface to which a photoresist is applied and an exposed surface to which the photoresist is not applied; Irradiating the cylindrical mold with a beam so as to form an etched pattern on the exposed surface; And adjusting an irradiation direction of the beam to adjust an angle at which the sidewalls of the etching pattern are etched.

It is to be understood that the solution of the problem of the present invention is not limited to the above-mentioned solutions, and the solutions which are not mentioned can be clearly understood by those skilled in the art to which the present invention belongs It will be possible.

According to the present invention, the side walls of the etching pattern formed on the outer circumferential surface of the cylindrical metal can be etched or etched with a curved surface by adjusting the irradiation direction of the ion beam with respect to the outer circumferential surface of the cylindrical metal mold in the plasma etching.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and the accompanying drawings.

1 is a configuration diagram of an etching apparatus according to an embodiment of the present invention.
2 is a side view of an etching apparatus according to an embodiment of the present invention.
3 is a perspective view of a cylindrical mold according to an embodiment of the present invention.
4 is a configuration diagram of an ion gun according to an embodiment of the present invention.
5 and 6 are plan views of an ion gun arrangement according to an embodiment of the present invention.
7 to 9 are plan views of an example of a beam direction adjusting unit according to an embodiment of the present invention.
10 and 11 are side views of the beam direction adjusting unit according to the embodiment of the present invention.
12 is a view illustrating a process of etching a sidewall of the etching pattern according to an embodiment of the present invention with a curved surface.
13 is a view illustrating a process of etching a step on a side wall of an etching pattern according to an embodiment of the present invention.
14 is a flowchart of an etching method according to an embodiment of the present invention.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to be illustrative of the present invention and not to limit the scope of the invention. Should be interpreted to include modifications or variations that do not depart from the spirit of the invention.

Although the terms used in the present invention have been selected in consideration of the functions of the present invention, they are generally used in general terms. However, the present invention is not limited to the intention of the person skilled in the art to which the present invention belongs . However, if a specific term is defined as an arbitrary meaning, the meaning of the term will be described separately. Accordingly, the terms used herein should be interpreted based on the actual meaning of the term rather than on the name of the term, and on the content throughout the description.

The drawings attached hereto are intended to illustrate the present invention easily, and the shapes shown in the drawings may be exaggerated and displayed as necessary in order to facilitate understanding of the present invention, and thus the present invention is not limited to the drawings.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a detailed description of known configurations or functions related to the present invention will be omitted when it is determined that the gist of the present invention may be obscured.

According to an aspect of the present invention, there is provided a semiconductor device comprising: a cover for accommodating a cylindrical mold having a coated surface to which a photoresist is applied and an exposed surface to which the photoresist is not applied; A pedestal supporting the cylindrical metal in a vertical direction; A rotation driving unit for transmitting rotation force to the pedestal to rotate the cylindrical mold; A plurality of ion guns provided on the cover and irradiating an ion beam to an outer peripheral surface of the cylindrical metal through a bar type opening formed in the longitudinal direction of the cylindrical metal mold to form an etching pattern on the exposed surface; And a beam direction for adjusting the irradiation direction of the beam with respect to the outer peripheral surface by rotating the ion gun about the vertical direction in the process of forming the etching pattern so that the side wall of the etching pattern is etched or etched with a step difference, And an adjusting unit may be provided.

According to another aspect of the present invention, there is provided a mold supporting apparatus comprising: a mold supporting unit for supporting a cylindrical mold having a coated surface to which a photoresist is applied and an exposed surface to which the photoresist is not applied; A rotation driving unit for transmitting rotation force to the mold support unit to rotate the cylindrical mold; A beam irradiating unit for irradiating the cylindrical mold with a beam so as to form an etched pattern on the exposed surface; And a beam direction adjusting unit for adjusting an irradiation direction of the beam irradiating unit to adjust an angle at which the sidewalls of the etching pattern are etched.

The beam direction adjusting unit may adjust the irradiation direction of the beam irradiating unit according to any one of the etching depth of the etching pattern, the irradiation time of the beam, and the thickness of the photoresist exhausted by the beam.

The beam direction adjusting unit adjusts the irradiation direction at a first angle when any one of the beam directions is equal to or less than a predetermined reference value so as to form a step on the sidewall, Can be adjusted.

The beam direction adjusting unit may continuously adjust the irradiation direction from the first angle to the second angle according to any one of the directions so that the side wall is formed into a curved surface.

The first angle and the second angle may be oblique to the outer circumferential surface, and the second angle may be larger than the first angle.

The beam irradiating unit includes a plurality of beam guns arranged to surround the cylindrical metal mold. The plurality of beam guns have openings for emitting the beam in the same direction as the longitudinal direction of the cylindrical metal mold, The beam can be irradiated to the outer peripheral surface of the cylindrical metal mold at the same angle.

And a cover for receiving the cylindrical metal mold and provided with the plurality of beam guns on the wall surface thereof, wherein the beam direction adjusting unit is provided on an upper portion or a lower portion of the cover, and rotates in cooperation with the plurality of beam guns And a rotation input unit for rotating the connection unit.

The connection unit may include a first member that receives a rotational force from the rotation input unit and rotates with the same rotation axis as the rotation axis of the cylindrical mold, and a second member that rotates the first member by connecting the first member and the plurality of beam guns, And a second member for interlocking rotation of the plurality of beam guns.

The first member and the second member may be coupled in the form of a step gear to adjust the direction of the plurality of beam guns stepwise or may be connected in a link form to continuously adjust the direction of the plurality of beam guns.

A vacuum chamber for accommodating the cylindrical metal mold; A plasma source part for supplying plasma to the beam irradiation part; And a power supply unit for applying a bias voltage to the cylindrical metal mold, wherein the beam irradiation unit comprises: a plasma sheath unit connected to the plasma source unit to extract ions from the plasma to generate an ion beam; A grid portion for focusing the beam, and an ion guide portion formed of a conductive material and receiving the bias voltage from the power source portion and emitting the ion beam in a predetermined direction.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: rotating a cylindrical mold having a coated surface to which a photoresist is applied and an exposed surface to which the photoresist is not applied; Irradiating the cylindrical mold with a beam so as to form an etched pattern on the exposed surface; And adjusting an irradiation direction of the beam to adjust an angle at which the sidewalls of the etching pattern are etched.

Further, in the adjusting step, the irradiation direction of the beam can be adjusted according to any one of the etching depth of the etching pattern, the irradiation time of the beam, and the thickness of the photoresist consumed by the beam.

In the adjusting step, the irradiation direction may be adjusted to a first angle when any one of the first and second angles is equal to or less than a predetermined reference value so that a step is formed on the sidewall, and when the angle is equal to or greater than the predetermined reference value, Can be adjusted.

Further, in the adjusting step, irradiation of the beam can be stopped while adjusting the irradiation direction.

Further, in the adjusting step, the irradiation direction may be continuously adjusted from the first angle to the second angle according to the one of the sides so that the side wall is formed into a curved surface.

Further, in the adjusting step, irradiation of the beam can be maintained while adjusting the irradiation direction.

The first angle and the second angle may be oblique to the outer circumferential surface, and the second angle may be larger than the first angle.

The irradiating step may include extracting ions from a plasma to generate an ion beam, focusing the ion beam, and emitting the ion beam in a certain direction.

Hereinafter, an etching apparatus 1000 according to an embodiment of the present invention will be described.

2 is a side view of an etching apparatus 1000 according to an embodiment of the present invention. FIG. 3 is a cross-sectional view of an etching apparatus 1000 according to an embodiment of the present invention. And is a perspective view of the mold 100.

1 and 2, the etching apparatus 1000 includes a vacuum chamber 1100, a vacuum pump 1120, a plasma source unit 1140, an inner cover 1200, a mold support unit 1300, a mold rotation driving unit 1400, a beam irradiating unit 1500, a beam direction adjusting unit 1600, and a power source unit 1700.

The vacuum chamber 1100 provides a space in which a plasma atmosphere is formed. For this, the inner space of the vacuum chamber 1100 can be maintained in a substantially vacuum state. For example, when the vacuum pump 1120 is connected to one side of the vacuum chamber 1100 and a negative pressure is applied to the inside of the vacuum chamber 1100, the internal space of the vacuum chamber 1100 can be in a vacuum state. When the inside of the vacuum chamber 1100 becomes a high vacuum, it becomes easy to generate plasma from the source gas or to maintain the plasma atmosphere during the etching process.

Further, the vacuum chamber 1100 may be electrically insulated to maintain a plasma atmosphere formed therein.

The plasma source part 1140 can create a plasma atmosphere inside the vacuum chamber 1100. To this end, the plasma source portion 1140 may include a gas inlet 1142 and a plasma generator 1144.

The gas inlet 1142 may be constituted by a flow channel connected to one side of the vacuum chamber 1100 from the gas supply source R storing the source gas and a valve for opening and closing the flow channel. When the valve is opened, the source gas can be introduced into the inner space of the vacuum chamber 1100 from the gas supply source (R). As the source gas, an inert gas may be mainly used, and typical examples thereof include argon (Ar) and nitrogen (N ₂ ). However, since the source gas can be appropriately selected as required, the kind of the source gas is not limited to the above-mentioned examples, or is not limited to the inert gas.

The plasma generator 1144 may apply energy to the source gas supplied to the inside of the vacuum chamber 1100 to transition it to a plasma state. Particularly, since the inside of the vacuum chamber 1100 is in a high vacuum state, when electrons of high voltage are applied to the source gas, electrons are easily accelerated, so that it is easy to generate plasma. A representative example of the plasma generator 1144 is an inductively coupled plasma (ICP) generator. The ICP generator may be composed of a coil type antenna and an RF power source for applying radio frequency (RF) power to the antenna. When high-frequency power is applied to the antenna by the RF power source, electrical energy is applied to the source gas and a plasma is generated. In addition, the plasma generator 1144 may be a capacitor coupled plasma (CCP) generator including an electrode type antenna and an RF power source for applying RF power thereto.

The inner cover 1200 is located in the inner space of the vacuum chamber 1100 and can provide a space in which the etching process for the cylindrical metal mold 100 is performed. In general, the inner cover 1200 may be provided as a tubular structure having a polygonal or circular cross-section such that the cylindrical metal mold 100 is received therein. Here, the inner cover 1200 can isolate the inner space in which the cylindrical metal mold 100 is accommodated from the plasma atmosphere of the vacuum chamber 1100. The beam irradiating unit 1500 can etch the surface of the cylindrical mold 100 by extracting ions from the external plasma atmosphere of the inner cover 1200 and irradiating ions inside the inner cover 1200 in the form of a beam. Further, the inner cover 1200 can be electrically insulated as in the case of the vacuum chamber 1100. Accordingly, the plasma formed in the space between the inner cover 1200 and the vacuum chamber 1100 can be prevented from moving in a specific direction.

The cylindrical metal mold 100 may be provided in the form of a cylinder having a hollow 160 formed therein. As the outer peripheral surface 120 is etched, Lt; / RTI > In some cases, the hollow 160 may not be formed in the cylindrical metal mold 100. As the material of the cylindrical metal mold 100, aluminum (Al) can be mainly used. The aluminum material has a relatively low density in the metal, which is advantageous in weight reduction and has an advantage in that it can provide sufficient strength in comparison with the density.

The cylindrical mold 100 may be supported by the mold supporting portion 1300. The mold supporting portion 1300 can support the cylindrical metal mold 100 inside the inner cover 1200. The mold support portion 1300 may be provided in the form of a stage having a protrusion at the center of the inner cover 1200. The protrusion is inserted into the hollow 160 of the cylindrical mold 100, So that the cylindrical mold 100 can be supported.

On the other hand, the mold supporting portion 1300 receives the rotational force from the mold rotation driving portion 1400 and can rotate the cylindrical mold 100. The mold supporting portion 1300 has a structure rotatable by a means such as a ball bearing and rotates together with the cylindrical mold 100 by receiving rotational force from a mold rotation driving portion 1400 provided in the form of a rotating means such as a motor. When the cylindrical metal mold 100 is rotated in the etching process, the entire outer peripheral surface 120 of the cylindrical metal mold 100 can be uniformly etched.

The beam irradiating unit 1500 may be composed of a single ion gun 1520 or a plurality of ion guns 1520. Each ion gun 1520 may be installed in the inner space or wall surface of the inner cover 1200. When there are a plurality of ion guns 1520, each ion gun 1520 may be arranged to surround the cylindrical metal mold 100 at a predetermined angle about the rotational axis of the cylindrical metal mold 100.

The ion gun 1520 can irradiate the ions extracted from the plasma toward the cylindrical mold 100 in the form of a beam. For this, one side of the ion gun 1520 is connected to the outer space of the inner cover 1200 having plasma, and the other side can be connected to the inner space of the inner cover 1200 on which the cylindrical metal mold 100 is placed.

Also, the ion gun 1520 may be provided as a bar type extending in the same direction as the longitudinal direction of the cylindrical metal mold 100. [ In this bar type ion gun 1520, an opening 1522b for emitting an ion beam toward the cylindrical metal mold 100 may be formed to have substantially the same length as the cylindrical metal mold 100. This is to allow the ion beam to be irradiated over the entire outer circumferential surface 120 of the cylindrical metal mold 100.

A brief description of the principle that the ion gun 1520 irradiates the ion beam is as follows. As described above, a plasma atmosphere is formed inside the vacuum chamber 1100, and the inside of the inner cover 1200 located inside the vacuum chamber 1100 is isolated from the plasma atmosphere. Here, the ion gun 1520 may be installed such that one side is connected to the outside of the inner cover 1200 and the other side is connected to the inside of the inner cover 1200. At this time, a bias power is applied to induce positive ions in the source gas of the plasma state at a portion of the ion gun 1520 which is connected to the inside of the inner cover 1200. The ion gun 1520 irradiates the ion beam by accelerating and inducing the induced positive ions toward the cylindrical mold 100 while passing through the ion gun 1520.

The power supply unit 1700 serves to apply the bias power described above. The power supply unit 1700 applies bias power to the ion gun 1520 as described above, but may also apply a bias power to the cylindrical mold 100. When a bias power source such as the ion gun 1520 is applied to the cylindrical metal mold 100, the ions emitted from the ion gun 1520 fly in a space having the same potential, so that the direction of the ion beam can be linearly controlled. The bias power source may be a DC power source, a single pole, or an RF self bias using a dipole pulse power source, an RF power source, a monopole repetitive pulse bias, a dipole repetition pulse bias, or the like.

The beam direction adjusting unit 1600 may control the direction in which the ion gun 1520 faces to adjust the irradiation direction of the ion beam. The ion gun 1520 is arranged to irradiate a beam toward the cylindrical mold 100. The beam direction adjusting unit 1600 adjusts the direction of the ion gun 1520 so that the ion beam is directed to the cylindrical mold 100 The angle of incidence on the outer circumferential surface 120 can be adjusted. For example, the beam direction adjustment unit 1600 may adjust the direction of the ion beam by rotating the ion gun 1520 at a specific angle with respect to the same direction as the rotation axis.

Hereinafter, the ion gun 1520 according to the embodiment of the present invention will be described in detail.

4 is a configuration diagram of the ion gun 1520 according to the embodiment of the present invention.

Referring to FIG. 4, the ion gun 1520 may include an ion guide portion 1522, a grid portion 1524, and a sheath portion 1526. The ion gun 1520 may be installed on the wall surface of the inner cover 1200 or one side of the ion gun 1520 may be located inside the inner cover 1200 and the other side of the ion gun 1520 may be located inside the inner cover 1200. [ The ion guide portion 1522 may be positioned toward the inside of the inner cover 1200 and the sheath portion 1526 may be positioned to be connected to the outside of the inner cover 1200. [ The grid portion 1524 is disposed between the ion guide portion 1522 and the sheath portion 1526.

The sheath portion 1526 can be connected to the outside of the inner cover 1200, i.e., the inner space of the vacuum chamber 1100, which is a plasma atmosphere. For example, the sheath portion 1526 may be provided on the outer surface of the outer wall of the inner cover 1200. The sheath portion 1526 can receive ions from the plasma existing outside the inner cover 1200. As described later, bias power is applied to the ion guide portion 1522 and the cylindrical metal mold 100 to induce positive ions from the plasma. The sheath portion 1526 serves to allow the introduced positive ions to flow into the ion gun 1520 Can be performed.

The ion guide part 1522 is provided with a conductive material such as a cushion material or an aluminum material and receives a bias power from the power source part 1700 to induce ions from the plasma. The ion guide portion 1522 may include an opening 1522b formed toward the inside of the inner cover 1200 and a channel 1522a connected from the opening 1522b. In the conduit 1522a, the ions introduced through the sheath portion 1526 are accelerated and the opening 1522b focuses the accelerated ions together with the grid portion 1524 so as to be emitted as a beam toward the cylindrical mold 100 have.

The grid portion 1524 may be provided between the ion guide portion 1522 and the sheath portion 1526 in the form of a partition wall having a smaller width than the sheath portion 1526. The grid portion 1524 may limit the path of the ions introduced from the sheath portion 1526 and perform the function of focusing ions with the beam.

5 and 6 are plan views of an arrangement of ion guns 1520 in accordance with an embodiment of the present invention.

Referring to FIGS. 5 and 6, a plurality of ion guns 1520 may be provided so as to surround the cylindrical metal mold 100. These plurality of ion guns 1520 can be dispersed and arranged at the same angle about the rotation axis of the cylindrical metal mold 100 between adjacent ion guns 1520. [ For example, referring to FIG. 5, the four ion guns 1520 may be arranged to surround the cylindrical metal mold 100 at an angle of 90 degrees with respect to each other. As another example, referring to FIG. 6, And can be arranged to surround the cylindrical metal mold 100 with an angle of view. It is obvious that the number of ion guns 1520 can be appropriately increased or decreased as needed.

The ion guns 1520 surrounding and surrounding the cylindrical metal mold 100 can irradiate the surface of the cylindrical metal mold 100, that is, the outer circumferential surface 120 with the same incident angle. Generally, in the etching using the ion beam, it is preferable that the incident angle of the ion beam with respect to the surface of the workpiece is vertical. In the present invention, however, the incident angle may be a diagonal direction, not a vertical direction. For example, the incident angle may be between 0 and 90 degrees. When the ion beam is irradiated in the oblique direction as described above, the end face of the etching pattern 140 formed by etching the cylindrical metal mold 100 has the side wall 142 etched in the oblique direction instead of the conventional vertical side wall 142 . The etching pattern 140 having the sidewall 142 in the oblique direction has optical, physical, and chemical properties different from those of the etching pattern 140 having the conventional vertical cross section.

Hereinafter, the beam direction adjusting unit 1600 according to the embodiment of the present invention will be described in detail.

7 to 9 are plan views of an example of a beam direction adjusting unit 1600 according to an embodiment of the present invention.

The beam direction adjustment unit 1600 can adjust the beam irradiation direction of the beam irradiation unit 1500. Specifically, the beam direction adjuster 1600 can rotate the ion gun 1520 in the same direction as the rotation axis, and accordingly, the direction in which the opening 1522b of the ion gun 1520 and the channel 1522a face is changed The beam irradiation direction of the ion gun 1520 can be adjusted. When the irradiation direction of the ion beam is adjusted as described above, the incident angle at which the ion beam is incident on the surface of the cylindrical metal mold 100 can be adjusted.

7 to 9, the beam direction adjusting unit 1600 may include a connection unit 1620 and an ion gun rotation driving unit 1640. Here, the beam direction adjusting unit 1600 generates power from the ion gun rotation driving unit 1640, and the connection unit 1620 receives the force to rotate the ion gun 1520, thereby adjusting the irradiation direction of the ion beam.

Referring to FIG. 7, the connection portion 1620 may include a first member 1622 and a second member 1624. The second member 1624 is provided in a rotatable structure receiving an external force from the ion gun rotation driving unit 1640. For example, the second member 1624 may be disposed on the upper side of the cylindrical metal mold 100 in the form of a circular rotating plate. The first member 1622 can couple the ion gun 1520 with the second member 1624 and adjust the direction of the ion gun 1520 according to the rotation of the second member 1624. [ For example, the first member 1622 may be provided as a member of a link type whose one side is fastened to the edge of the circular rotary plate and the other side is fastened to the ion gun 1520. When the circular rotary plate is rotated, one side of the first member 1622 moves and the ion gun 1520 fastened to the other side can be rotated. The first member 1622 is provided so as to correspond to each ion gun 1520 and is arranged in a symmetrical structure so that all of the ion guns 1520 rotate at the same angle so that the incidence angles of the ion beams of the ion guns 1520 are all the same .

In FIG. 7, four first members 1622 are shown connected to four ion guns 1520, respectively. In contrast, when the number of ion guns 1520 is changed, The number can also be changed. 8 shows the structure of the connection portion 1620 when there are eight ion guns 1520. FIG.

On the other hand, the beam direction irradiating unit can adjust the direction of the ion gun 1520 stepwise or continuously in a predetermined angle unit. 7 and 8, the second member 1624 is continuously rotated by the ion gun rotation driver 1640 so that the first member 1622 of the link structure is rotated by the angle of the ion gun 1520 Adjustment can be made continuously.

9, the second member 1624 is provided with a rotating plate structure having gears, and the first member 1622 may be composed of a link 1622a and a gear 1622b. Here, the gear 1622b meshes with the gear of the second member 1624 and rotates in units of steps of the gear, so that the link also adjusts the angle of the ion gun 1520 in steps of the gear, 1520 may be discontinuously adjusted according to a predetermined angle unit instead of being continuously adjusted.

10 and 11 are side views of the beam direction adjusting unit 1600 according to the embodiment of the present invention.

10, the ion gun rotation driving unit 1640 includes a rotational force transmitting portion 1642 including a head 1642a, a rod 1642b, and a body 1642c, a screw 1644 on which a rotational force transmitting portion 1642 is mounted, ), A piston 1646, and a fixed frame 1648.

The fixed frame 1648 is installed on the outer wall of the vacuum chamber 1100 and can provide a space in which the screw 1644 and the piston 1646 are installed. The piston 1646 is installed in the fixed frame 1648 so as to face the outer wall of the vacuum chamber 1100 and the screw 1644 can be installed to extend from the end of the piston 1646 toward the outer wall of the vacuum chamber 1100 .

The piston 1646 may move or rotate the screw 1644. When the screw 1644 moves or rotates, a force can be transmitted to the rotational force transmitting portion 1642 fastened to the screw 1644. The rotational force transmitting portion 1642 includes a body 1642c provided to the screw 1644c and a rod 1642b extending from the body 1642c and a rod 1642b extending from the end of the rod 1642a and connected to the second member 1624. [ (1642a). A force transmitted from the screw 16440 to the body 1642c can rotate the second member 1624 via the rod 1642b and the head 1642a.

11, the ion gun rotation driving unit 1640 may include a cylindrical connection unit 1620 and a motor type ion gun rotation driving unit 1640 or 1644. When the motor generates a rotational force, the rotational force is transmitted to the second member 1624 through the cylinder. When the second member 1624 rotates, the first member 1622 rotates in the direction of the beam of the ion gun 1520 Can be adjusted.

The use of the above-described electronic appliance 1000 can etch a pattern having a step on the sidewall 142 or a curved sidewall 142 on the outer circumferential surface 120 of the cylindrical metal mold 100. Hereinafter, the process of forming the three-dimensional etching pattern 140 on the outer circumferential surface 120 of the cylindrical metal mold 100 will be described.

FIG. 12 is a view illustrating a process of etching the sidewall 142 of the etching pattern 140 according to an embodiment of the present invention. FIG. 13 is a cross-sectional view of the side wall 142 of the etching pattern 140 according to an embodiment of the present invention. 142 in the step of etching the step.

A photoresist may be applied to the outer circumferential surface 120 of the cylindrical mold 100 to correspond to a pattern to be etched. The outer circumferential surface 120 of the cylindrical mold 100 can be distinguished by the coated surface 122 coated with the photoresist and the exposed surface 124 not coated with the photoresist. When the ion beam is irradiated to the outer circumferential surface 120 of the cylindrical mold 100, the coated surface 122 is protected by the photoresist so that the exposed surface 124 is not etched. Generally, when the ion beam 140 is incident on the surface of the ion beam in a vertical direction, the etching pattern 140 is etched to have a vertical section, but when the ion beam is incident in a diagonal direction, the etching pattern 140 has a sidewall 142 Lt; / RTI >

Referring to FIG. 12, the ion beam can be irradiated to the surface at a first angle in an oblique direction with an incident angle of 90 degrees or less. When the ion gun 1520 irradiates the ion beam in an oblique direction to the rotation axis without facing the rotation axis of the cylindrical metal mold 100, the incident angle can be adjusted to the first angle. At this time, the ion beam does not reach the shadow region formed by the thickness of the photoresist of the exposed surface 124 of the cylindrical metal mold 100, so that the ion beam can not be etched. On the other hand, since the ion beam is incident on the oblique line, the bottom surface of the coated surface 122 can be etched. As a result, an etching pattern 140 etched at a first angle is formed on the outer circumferential surface 120 of the cylindrical metal mold 100 which receives the ion beam at the first angle.

In this state, the beam direction adjusting unit 1600 can adjust the irradiation direction of the ion gun 1520 so that the incident angle of the ion beam becomes larger. The incident angle may be a second angle larger than the first angle and smaller than the vertical angle. In this case, in the pattern etched at the first angle, since the incident angle of the portion of the photoresist that has been etched to the lower portion is increased from the first angle to the second angle, a portion of the portion previously etched by the first angle is left as it is, (A left wall surface of the etching pattern 140 shown in the second drawing of Fig. 12). That is, a step is formed in the side wall 142 of the etching pattern 140.

 On the other hand, since the incident angle of the ion beam is increased from the first angle to the second angle in the pattern etched at the first angle and the remaining thickness of the photoresist is lowered as the photoresist is exhausted by the ion beam, A shadow region formed on the surface 124 is reduced to cause a portion of the exposed surface 124 that is not etched to be etched at a second angle, and a portion where the etched portion is etched more deeply, (The right wall surface of the etching pattern 140 shown in the second drawing of FIG. 12).

In this state, if the incident angle of the ion beam is adjusted to a third angle smaller than the second angle and larger than the second angle, the etching pattern is formed in a manner similar to the case where a step is formed when the first angle is etched and then the second angle is etched A step is further formed on both side walls 142 of the first and second side walls 140 and 140.

The etching pattern 140 having a step on both side walls 142 may be formed on the outer circumferential surface 120 of the cylindrical metal mold 100 when the etching angle of the ion beam is increased discretely.

Alternatively, it is also possible to perform etching while gradually reducing the incident angle of the ion beam during etching. Referring to FIG. 13, there is shown the shape of the etch pattern 140 formed when the incident angle of the ion beam is reduced to the third angle, the second angle, and the first angle during the etching using the ion beam . At this time, the sidewalls 142 formed at the lower portion of the photoresist in the etching pattern 140 are formed to have three surfaces connected to each other at an angle different from each other, and the opposite sidewalls 142 are formed on the sidewalls 142, Can be formed.

12 and 13, the etching is performed at a certain angle to some extent, the irradiation of the ion beam is stopped, the incident angle is adjusted, and the etching process is repeated. That is, the incident angle of the ion beam It is controlled discontinuously. However, if the ion beam is continuously irradiated with the ion beam and the incident angle of the ion beam is continuously adjusted, a curved surface may be formed on the side wall 142 of the etching pattern 140 instead of the step. For example, in Fig. 12, the cylindrical metal mold 100 is rotated while irradiating the ion beam at the first angle, the irradiation of the ion beam is stopped, the incident angle is changed to the second angle, , The irradiation of the ion beam is stopped, the angle of incidence is changed to the third angle, and the etching is proceeded through the re-examination of the ion beam. Alternatively, the ion beam is continuously irradiated with the ion beam to continuously change the angle from the first angle to the third angle So that the etch pattern 140 can be formed to have a curved side wall 142.

Hereinafter, an etching method according to an embodiment of the present invention will be described in detail. Here, the etching method may be for carrying out a method of manufacturing a mold having a fine pattern of an oblique etching cross-section on the surface of a cylinder.

14 is a flowchart of an etching method according to an embodiment of the present invention.

14, the etching method includes a step S110 of mounting and rotating the cylindrical metal mold 100, a step S120 of irradiating the ion beam, a step S120 of forming the etching pattern 140, (S140) of irradiating the ion beam (S130), adjusting the irradiation angle of the ion beam (S140), and controlling and etching the shape of the side wall 142 of the etching pattern 140 . Hereinafter, each step will be described in more detail.

First, the cylindrical mold 100 is held by the mold support unit 1300 and rotated (S110). The mold support portion 1300 can support the cylindrical mold 100 inside the inner cover 1200. [ When the cylindrical mold 100 is fastened and supported by the mold supporting portion 1300, the mold rotation driving portion 1400 rotates the mold supporting portion 1300 to rotate the cylindrical mold 100.

When the mold rotates, the beam irradiating unit 1500 can irradiate the ion beam (S120). The process until the ion beam is irradiated is as follows. First, the vacuum pump 1120 applies a negative pressure to the inside of the vacuum chamber 1100 to form the internal space in a high vacuum state. In this state, the source gas flows into the vacuum chamber 1100 through the gas inlet 1142. When a sufficient amount of sog gas is introduced, a plasma generator 1144 applies electrical energy to the source gas to generate a plasma. At this time, the wall surfaces of the vacuum chamber 1100 and the inner cover 1200 are electrically insulated from each other, and the plasma remains in the space between the vacuum chamber 1100 and the inner cover 1200. In this state, the power supply unit 1700 can apply bias power to the cylindrical mold 100 and the ion gun 1520. [ This bias power source can induce ions from the plasma. The induced ions pass through the ion gun 1520 and can be irradiated to the cylindrical mold 100 in the form of a beam while being accelerated. At this time, the irradiation direction of the ion beam can be adjusted according to the direction in which the opening 1522b of the ion gun 1520 and the channel 1522a are directed. When the ion beam is incident on the outer circumferential surface 120 of the cylindrical metal mold 100, the exposed surface 124 of the outer circumferential surface 120 not coated with the photoresist is etched (S130).

At this time, the irradiation angle of the ion beam can be adjusted to the diagonal direction, not the vertical direction. The ion beam incident in the oblique direction can etch the oblique etching pattern 140 on the surface of the cylindrical metal mold 100. Further, during irradiation of the ion beam, the beam direction adjusting unit 1600 may rotate the direction of the ion gun 1520 to control the angle at which the ion beam is incident on the cylindrical mold 100 (S140). When the incident angle of the ion beam is changed during etching, a step may be formed on the side surface of the etching pattern 140 as described above with reference to FIGS. 12 and 13, or an etching pattern 140 having a curved side surface may be formed (S150) .

Here, the direction of the ion beam may be continuously or discontinuously adjusted. The ion beam direction adjusting unit 1600 adjusts the ion beam irradiation time, the depth of the etching pattern 140, the remaining thickness of the photoresist, and the like The direction of the ion beam can be controlled.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments of the present invention described above can be implemented separately or in combination.

Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: cylindrical mold
1000: etching device
1100: Vacuum chamber
1200: inner cover
1300: mold support
1400:
1500:
1520: Ion gun
1600: Irradiation direction adjusting section
1700:

Claims (19)

A cover for accommodating a cylindrical mold having a coated surface to which a photoresist is applied and an exposed surface to which said photoresist is not applied;
A pedestal supporting the cylindrical metal in a vertical direction;
A rotation driving unit for transmitting rotation force to the pedestal to rotate the cylindrical mold;
A plurality of ion guns provided on the cover and irradiating an ion beam to an outer peripheral surface of the cylindrical metal through a bar type opening formed in the longitudinal direction of the cylindrical metal mold to form an etching pattern on the exposed surface; And
A beam direction adjusting unit for adjusting the irradiation direction of the beam with respect to the outer circumferential surface by rotating the ion gun about a vertical axis in the process of forming the etching pattern so that the side wall of the etching pattern is etched or etched with a step, Containing
Etching device.
A mold support for supporting a cylindrical mold having a coating surface coated with a photoresist and an exposed surface not coated with the photoresist;
A rotation driving unit for transmitting rotation force to the mold support unit to rotate the cylindrical mold;
A beam irradiating unit for irradiating the cylindrical mold with a beam so as to form an etched pattern on the exposed surface; And
And a beam direction adjusting unit for adjusting an irradiation direction of the beam irradiating unit in order to adjust the etching angle of the side wall of the etching pattern
Etching device.
3. The method of claim 2,
The beam direction adjustment unit adjusts the irradiation direction of the beam irradiation unit according to any one of the etching depth of the etching pattern, the irradiation time of the beam, and the exhaustion thickness of the photoresist exhausted by the beam
Etching device.
The method of claim 3,
Wherein the beam direction adjusting unit adjusts the irradiation direction at a first angle when any one of the beam directions is equal to or less than a predetermined reference value so as to form a step on the sidewall and adjusts the irradiation direction at a second angle when the beam angle is greater than or equal to the predetermined reference value doing
Etching device.
The method of claim 3,
Wherein the beam direction adjusting unit continuously adjusts the irradiation direction from the first angle to the second angle according to any one of the directions so that the side wall is formed into a curved surface
Etching device.
6. The method according to any one of claims 4 and 5,
Wherein the first angle and the second angle are oblique to the outer circumferential surface,
Wherein the second angle is larger than the first angle
Etching device.
3. The method of claim 2,
Wherein the beam irradiating portion includes a plurality of beam guns arranged to surround the cylindrical metal mold,
Wherein the plurality of beam guns each have an opening for emitting the beam in the same direction as the longitudinal direction of the cylindrical metal mold and each irradiate the beam at the same angle to the outer circumferential surface of the cylindrical metal mold
Etching device.
8. The method of claim 7,
And a cover on which the cylindrical mold is housed and on which the plurality of beam guns are installed,
The beam direction adjustment unit may include a connection unit installed at an upper portion or a lower portion of the cover and installed to rotate in conjunction with the plurality of beam guns and a rotation input unit for rotating the connection unit
Etching device.
9. The method of claim 8,
Wherein the connection unit includes a first member that receives a rotational force from the rotation input unit and rotates with the same rotation axis as the rotation axis of the cylindrical mold, and a second member that connects the first member and the plurality of beam guns, And a second member for interlocking the rotation of the beam gun
Etching device.
10. The method of claim 9,
Wherein the first member and the second member are coupled in a stepped shape to adjust the direction of the plurality of beam guns in a step unit or a link shape to continuously adjust the direction of the plurality of beam guns
Visual device.
3. The method of claim 2,
A vacuum chamber for accommodating the cylindrical metal mold;
A plasma source part for supplying plasma to the beam irradiation part; And
And a power supply unit for applying a bias voltage to the cylindrical mold,
Wherein the beam irradiator comprises a plasma sheath portion connected to the plasma source portion to extract ions from the plasma to generate an ion beam, a grid portion for focusing the ion beam, and a conductive material, And an ion guide portion for receiving the voltage and emitting the ion beam in a predetermined direction
Etching device.
Rotating a cylindrical mold having a coated surface coated with a photoresist and an exposed surface not coated with the photoresist;
Irradiating the cylindrical mold with a beam so as to form an etched pattern on the exposed surface; And
And adjusting an irradiation direction of the beam to adjust the etching angle of the side wall of the etching pattern
Etching method.
13. The method of claim 12,
In the adjusting step, the irradiation direction of the beam is adjusted according to any one of an etching depth of the etching pattern, an irradiation time of the beam, and an exhaust thickness of the photoresist exhausted by the beam
Etching method.
14. The method of claim 13,
Adjusting the irradiation direction at a first angle when any one of the plurality of steps is equal to or less than a predetermined reference value so as to form a step on the sidewall; doing
Etching method.
15. The method of claim 14,
In the adjusting step, the irradiation of the beam is stopped while adjusting the irradiation direction
Etching method.
14. The method of claim 13,
In the adjusting step, the irradiation direction is continuously adjusted from the first angle to the second angle in accordance with any one of them so that the side wall is formed into a curved surface
Etching method.
17. The method of claim 16,
In the adjusting step, while the irradiation direction is adjusted, irradiation of the beam is maintained
Etching method.
17. The method according to any one of claims 14 to 16,
Wherein the first angle and the second angle are oblique to the outer circumferential surface,
Wherein the second angle is larger than the first angle
Etching method.
13. The method of claim 12,
Wherein the step of irradiating comprises the steps of extracting ions from a plasma to produce an ion beam, focusing the ion beam, and emitting the ion beam in a constant direction
Etching method.

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