KR20150120549A - Roll to Roll apparatus for etching and Controlling method thereof - Google Patents

Roll to Roll apparatus for etching and Controlling method thereof Download PDF

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Publication number
KR20150120549A
KR20150120549A KR1020140045818A KR20140045818A KR20150120549A KR 20150120549 A KR20150120549 A KR 20150120549A KR 1020140045818 A KR1020140045818 A KR 1020140045818A KR 20140045818 A KR20140045818 A KR 20140045818A KR 20150120549 A KR20150120549 A KR 20150120549A
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South Korea
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roll
conductive layer
thin film
liquid
unit
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KR1020140045818A
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Korean (ko)
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박용석
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주식회사 디엠에스
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Publication of KR20150120549A publication Critical patent/KR20150120549A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

The present invention can simplify a complicated manufacturing process, and can form a conductive pattern having continuous thin film characteristics with excellent contour sharpness through physical interaction between a process liquid and a base film while continuously forming a conductive pattern A roll-to-roll etching apparatus and a control method thereof
To this end, the present invention relates to a transfer roll for transferring a first thin film in a state where a conductive layer is coated on an upper surface of a resin layer having a recessed pattern space; And a process unit for removing an excess conductive layer, which is a conductive layer other than the conductive pattern coated on the pattern space, of the conductive layer, and a control method therefor.

Description

Technical Field The present invention relates to a roll-to-roll etching apparatus and a control method thereof,

The present invention relates to a roll-to-roll etching apparatus and a control method thereof, and more particularly, to a roll-to-roll etching apparatus and a control method thereof that simplify a complicated manufacturing process and can continuously form a conductive pattern, The present invention relates to a roll-to-roll etching apparatus capable of forming a conductive pattern with excellent uniformity and uniform film characteristics and a control method thereof.

In order to mass-produce a next-generation solar cell element, a next-generation system semiconductor, and a high-brightness optical film element for a display, a technique capable of continuously forming fine patterns on a large area on a film substrate is required.

In general, a photolithography method is used as an example of a method of forming a conductive pattern used in an electronic device.

However, in the photolithography process, it is inconvenient to repeat a basic process such as vapor deposition, exposure, development, and etching several times or several times, and there is a waste of material and a complicated process, There is a problem that it is difficult to design the large-area mask in a short time according to a new pattern.

In order to overcome the shortcomings of the photolithography method, a flexible polymer substrate such as a film including at least one of paper, paper, polyimide, There has been developed a technique of stably forming a conductive pattern on a substrate by forming a conductive pattern in the form of a fluid or a paste in a part or more and heat-treating and baking or sintering the conductive pattern.

However, when the conductive pattern is heat-treated, there is a problem that the flexible substrate is thermally deformed physically or chemically, and the whole process time is long, which is inefficient. Recently, a technique of sintering a pattern using a laser or a microwave has been attempted. However, a laser has a disadvantage in that it is difficult to process a large area pattern and a microwave has a long process time.

SUMMARY OF THE INVENTION The present invention provides a roll-to-roll etching apparatus and a control method thereof capable of forming a conductive pattern having excellent thin-film characteristics and excellent edge sharpness through physical interaction between a process liquid and a base film .

Another object of the present invention is to provide a roll-to-roll etching apparatus and a control method thereof that can simplify a complicated manufacturing process for forming a pattern and continuously form a conductive pattern to increase productivity.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including: a transfer roll for transferring a first thin film having a conductive layer coated on a top surface of a resin layer having a recessed pattern space; And a process unit for removing the surplus conductive layer, which is the remaining conductive layer except for the conductive pattern coated on the pattern space, of the conductive layer.

The process unit may include a process roll on which the first thin film is wound and a process liquid spray nozzle that ejects the process liquid onto the first thin film to remove the excess conductive layer.

Here, the process liquid may be formed on the basis of the difference between the height from the bottom surface of the first thin film to the top surface of the redundant conductive layer and the height from the bottom surface of the first thin film to the top surface of the conductive pattern, The redundant conductive layer can be removed while interacting with the redundant conductive layer between the first thin films.

In particular, when the first thin film rotates along the process roll, the excess conductive layer may be removed while being worn out due to friction with the abrasive grains included in the process solution.

Wherein the process roll includes a first process roll and a second process roll disposed at a distance from the first process roll and the second process roll, wherein the process unit is disposed between the first process roll and the second process roll, And a process speed adjusting unit capable of adjusting the process speed by measuring the tension.

Wherein the process speed adjusting unit includes a control roll disposed between the first process roll and the second process roll and wound with the first thin film, a control roll moving body for moving the position of the control roll, And a load cell for measuring a tensile force applied to the load cell.

The process liquid includes a conductive layer protective liquid for protecting the conductive pattern and a conductive layer etchant for removing the excess conductive layer, wherein the conductive layer protective liquid and the conductive layer etchant may be sprayed independently of each other.

Wherein the process liquid spray nozzle comprises: a protective liquid spray nozzle for spraying the conductive layer protective liquid onto the first thin film wound on the first process roll; and a protective liquid spray nozzle for spraying the conductive layer etchant on the first And an etchant spraying nozzle for spraying onto the thin film.

The roll-to-roll etching apparatus further includes a protective liquid storage tank storing the conductive layer protective liquid, and an etchant storage tank storing the conductive layer etching solution, wherein the protective liquid storage tank and the etchant storage tank are independently And may be separately connected to the protective liquid spraying nozzle and the etchant spraying nozzle.

According to another embodiment of the process unit provided in the roll-to-roll etching apparatus according to the present invention, the process liquid includes a mixed solution of a conductive layer protective liquid for protecting the conductive pattern and a conductive layer etchant for removing the excess conductive layer Wherein the process liquid injection nozzle comprises: a first injection nozzle for spraying the mixing process liquid onto the first thin film wound on the first process roll; and a second injection nozzle for winding the liquid mixture on the second process roll And a second injection nozzle for spraying the first thin film on the first thin film.

The roll-to-roll etching apparatus includes a mixing process liquid storage tank storing the mixing process liquid, a mixing process liquid supply pipe connecting the mixing process liquid storage tank, the first injection nozzle and the second injection nozzle, A mixing process liquid pump disposed on the mixing process liquid supply pipe and a mixing process liquid filter for filtering the mixing process liquid on the mixing process liquid supply pipe.

Further, the processing unit may include a first processing unit and a second processing unit disposed next to each other, wherein the roll-to-roll etching apparatus is disposed between the first processing unit and the second processing unit, And a process condition adjusting unit for adjusting a process condition in the second process unit after measuring the process degree of the thin film passed through the process unit.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including: a transfer step of transferring a first thin film having a conductive layer coated on a top surface of a resin layer having a recessed pattern space; And an etching step of removing an excess conductive layer, which is a conductive layer other than the conductive pattern coated on the pattern space, of the conductive layer.

The etching process includes a process liquid spraying step of spraying a process liquid onto the first thin film wound on the process roll to remove the surplus conductive layer, a step of spraying the process liquid from the bottom surface of the first thin film to the upper surface of the surplus conductive layer The process liquid interacts with the redundant conductive layer between the process roll and the first thin film on the basis of the difference between the height of the redundant conductive layer and the height from the bottom surface of the first thin film to the top surface of the conductive pattern, The excess conductive layer removing step of removing the excess conductive layer.

The process roll also includes a first process roll and a second process roll disposed at spaced apart intervals, wherein the etch process step includes the steps of: locating the control roll positioned between the first process roll and the second process roll, And controlling the process speed by moving the process speed adjusting step.

Further, the process unit may include a first process unit and a second process unit disposed adjacent to each other, and the control method of the roll-to-roll etching apparatus may include a process condition adjustment And a process condition adjusting step of adjusting a process condition in the second process unit after measuring a process degree of the thin film passed through the first process unit through the unit.

The roll-to-roll etching apparatus and its control method according to the present invention have the following effects.

First, based on the difference in physical height between the redundant conductive layer and the conductive pattern in the conductive layer, the redundant conductive layer is removed through the interaction between the process liquid and the redundant conductive layer, so that the etching solution used in the chemical corrosion method is not used There is an advantage that a thin film excellent in the contour sharpness of an environmentally friendly but conductive pattern can be obtained.

Secondly, the etching process is simplified by removing the excess metal layer based on the difference in physical height between the conductive pattern and the redundant metal layer, and the etching process for removing the excess metal layer is continuously performed in one device line, There is an advantage.

Third, there is an advantage that the etching rate can be more efficiently performed by controlling the process speed of the thin film by measuring the tensile force applied to the thin film by providing a process speed adjusting unit.

Fourth, in the etching apparatus having a plurality of process units, a process condition adjusting unit is installed to check the process progress of the thin film passed through the preceding process unit in real time, and based on this, There is an advantage that the process situation can be controlled more efficiently.

1 is a view showing a first embodiment of a roll-to-roll etching apparatus according to the present invention.
FIG. 2 is a view showing a main part of a process unit provided in the roll-to-roll etching apparatus of FIG. 1;
3 is a flowchart showing a control method of the roll-to-roll etching apparatus of FIG.
4 is a view showing a second embodiment of a roll-to-roll etching apparatus according to the present invention.
5 is a flowchart showing a control method of the roll-to-roll etching apparatus of FIG.
6 is a view showing a third embodiment of a roll-to-roll etching apparatus according to the present invention.
7 is a view showing a main part of a process unit provided in the roll-to-roll etching apparatus of FIG.
8 is a flowchart showing a control method of the roll-to-roll etching apparatus of FIG.

Hereinafter, preferred embodiments of the present invention in which the above-mentioned problems to be solved can be specifically realized will be described with reference to the accompanying drawings. In describing the embodiments, the same names and the same symbols are used for the same configurations, and additional description therefor will be omitted below.

Referring to FIGS. 1 and 2, a first embodiment of a roll-to-roll etching apparatus according to the present invention will be described.

The roll-to-roll etching apparatus includes a conductive pattern 30 coated on the pattern space 21 in a first thin film having an upper surface of a resin layer 20 having a recessed pattern space 21 coated with a conductive layer 30 Which is the remaining conductive layer excluding the remaining conductive layer 33.

Hereinafter, the first thin film is a thin film to be transferred to the previous stage of the first process roll 210, which is a detailed structure of the process unit 200 provided in the roll-to-roll etching apparatus, And a second process thin film (Q2), which is a thin film transferred to the previous stage of the second process roll (220) after passing through the one process roll (210).

First, the process until the first process thin film Q1 is formed will be briefly described as follows.

The resin layer 20 is coated on the upper surface of the flexible base film 10 and the pattern space 21 is recessed from the upper surface of the resin layer 20.

Here, the process of forming the pattern space 21 is performed by a stamping process of a pattern space forming unit (not shown) having a relief pattern corresponding to the pattern space 21. Of course, the forming process of the pattern space 21 may be performed in various ways.

Next, the conductive layer 30 is coated on the upper surface of the resin layer 20 to form the first process thin film Q1. Here, as the conductive layer 30, a metal layer may be used, and the metal layer may be deposited through a sputtering method. Of course, the conductive layer 30 may be coated by any method.

A region of the conductive layer 30 to be coated on the pattern space 21 becomes the conductive pattern 31 and an area excluding the conductive pattern 31 becomes an excess conductive layer 33. [

The height of the excess conductive layer 33 to the upper surface of the base film 10 is greater than the height of the conductive pattern 31 to the upper surface. In addition, the conductive pattern 31 is coated on the lower region of the pattern space 21.

When the first process thin film Q1 formed through the above-described process is supplied to the roll-to-roll etching apparatus, the roll-to-roll etching apparatus performs an etching process for removing the redundant conductive layer 33. [

The conductive pattern 31 is coated on a pattern space of a negative angle formed by a relief pattern of embossed patterns and the excess conductive layer 33 is formed on the basis of a physical height difference between the conductive pattern 31 and the redundant conductive layer 33 The conductive pattern can be formed at the correct position of the flexible substrate.

The roll-to-roll etching apparatus includes a winding roll 410 for winding the first process thin film Q1, a process chamber 100 in which the etching process is performed, a second process thin film Q1, 33, a process liquid supply unit 300 for supplying a process liquid for the etching process, a winding roll 420 for winding the thin film on which the etching process has been completed, And conveying rolls for conveying the thin film during its execution.

The process chamber 100 includes a chamber housing 110 defining a space therein, a partition wall 115 partitioning the inner space of the chamber housing 110, (Not shown).

The inner space of the chamber housing 110 is partitioned into a first space 111 and a second space 113 by the separation wall 115 and the first space 111 and the second space 113 are separated from each other, A detailed process of the etching process is performed.

The process liquid storage tank 120 includes a protective liquid storage tank 121 for storing a conductive layer protective liquid for protecting the conductive pattern 31 and a conductive layer etchant for removing the excess conductive layer 33. [ And an etchant storage tank 123 to be stored.

The protective liquid storage tank 121 is disposed below the first space 111 and the etchant storage tank 123 is disposed below the second space 113. Here, the protective liquid storage tank 121 and the etchant storage tank 123 are independently provided so that the conductive layer protective solution and the conductive layer etchant are not mixed with each other.

The winding roll 410 is disposed at the front end of the process chamber 100 and the winding roll 420 is disposed at the rear end of the process chamber 100. [

A first transport roll 431 for transporting the thin film is disposed in a region of the first space 111 adjacent to the take-up roll 410. The second take-up roll 431 of the second space 113 The second transport roll 433 is disposed in the area adjacent to the second transport roll 433.

The process unit 200 includes a process roll in which the first thin film is wound and a process liquid spray nozzle that ejects the process liquid to the first thin film to remove the excess conductive layer 33.

The process roll includes a first process roll 210 and a second process roll 220 disposed at a distance from each other.

The process liquid spray nozzle includes a protective liquid spray nozzle 240 for spraying the conductive layer protective liquid onto the first process film Q1 wound around the first process roll 210, And an etchant spray nozzle 250 for spraying the second process thin film Q2 wound on the second process roll 220.

The process unit 200 may further include a first pressurizing unit 210 rotating the first process roll 210 with the first process film Q1 interposed therebetween to pressurize the first process thin film Q1, Roll 260 and a second press roll 270 rotating together with the second process roll 220 with the second process film Q2 interposed therebetween.

The protective liquid spray nozzle 240 and the etchant injection nozzle 250 are individually connected to the protective liquid storage tank 121 and the etchant storage tank 123 via the process liquid supply unit 300 .

The protective liquid spray nozzle 240 sprays the conductive layer protective liquid onto the first process thin film Q1 before the conductive layer etching liquid is sprayed. The protective layer liquid sprayed onto the first process thin film (Q1) through the protective liquid spray nozzle (240) is returned to the protective liquid storage tank (121).

The protective liquid layer 40 formed of the conductive layer protecting liquid protects the conductive pattern 31 from the conductive layer etching solution when the excess conductive layer 33 is removed.

The first process roll 210 is disposed at a front end of the second process roll 220 and is positioned at a position opposite to the protective liquid spray nozzle 240. The first process roll 210 is rotated in a state where the first process thin film Q1 is wound, Thereby guiding the movement of the one process thin film Q1.

The etchant injection nozzle 250 injects a conductive layer etching solution onto the upper surface of the protective liquid layer 40 to remove the excess conductive layer 33. Here, the upper surface of the protective liquid layer 40 is disposed at a position lower than the bottom surface of the excess conductive layer 33. The conductive layer etchant injected onto the second process thin film (Q2) through the etchant injection nozzle (250) is recovered to the etchant storage tank (123).

The second process roll 220 may be formed in a state where the second process thin film Q2 coated with the protective liquid layer 40 is wound at a position opposite to the etchant injection nozzle 250, (Q2).

Here, the conductive layer etchant is disposed between the second process roll 220 and the redundant conductive layer 33, and extends from the bottom surface of the second process thin film Q2 to the upper surface of the redundant conductive layer 33 Through the interaction with the redundant conductive layer 33 on the basis of the difference in physical height between the bottom surface of the second process thin film Q2 and the top surface of the conductive pattern 31, ).

When the second process film Q2 rotates while being wound around the second process roll 220, the excess conductive layer 33 is worn out due to friction with the abrasive particles 1 contained in the conductive layer etching solution Removed.

On the other hand, since the conductive pattern 31 is disposed in a lower region on the pattern space 21 and the cross-sectional diameter of the abrasive particle 1 is much larger than the width of the pattern space 21, (1) is not in contact with the conductive pattern (31).

The second process roll 220 is pressed against the excess conductive layer 33 and the pattern space 21 even if the second process roll 220 presses the second process film Q2 during the rotation of the second process roll 220. [ The conductive pattern 31 formed in the lower region of the pattern space 21 is not affected by the abrasive grains 1 because the resin layer 20 formed on the outside of the pattern space 21 acts as a single wall. For example, if it is assumed that the direction of the second process roll 220 is the direction of light, the pattern space 21 corresponds to a shadow region.

The conductive layer 31 rubs against the excess conductive layer 33 due to the difference in physical height between the excess conductive layer 33 and the conductive pattern 31. However, .

In addition, since the conductive pattern 31 is protected by the protective liquid layer 40 in a state in which the conductive pattern 31 is disposed in the lower region of the pattern space 21, friction with the excess conductive layer 33 does not occur .

As a result, the conductive pattern 31 does not interact with the conductive layer etchant due to the difference in the physical height with respect to the excess conductive layer 33 and the protection layer 40, 31) is not only excellent in the profile sharpness but also has the advantage of having uniform electrical characteristics and excellent optical characteristics.

Since the redundant conductive layer 33 is removed by the physical height difference with the conductive pattern 31, the etching solution used in the chemical etching method is not used. Thus, the etching apparatus according to the present embodiment can be applied to an environmentally friendly manufacturing apparatus .

Meanwhile, the process unit 200 may be disposed between the first process roll 210 and the second process roll 220 to adjust the process speed by measuring a tension applied to the second process film Q2 And a process speed adjusting unit.

The process speed controller includes a control roll 230 disposed between the first process roll 210 and the second process roll 220 and wound with the second process film Q2, And a load cell (not shown) for measuring a tensile force applied to the second process thin film Q2.

The regulating roll 230 can be moved up and down, and can be installed on the separating wall 115. The load cell is installed on the control roll 230 to measure a tension applied to the second process thin film Q2.

 The adjusting roll moving member moves the position of the adjusting roll 230 based on the tension of the second process thin film Q2 measured at the load cell. As the position of the control roll 230 is moved, the contact area of the thin film contacting each of the first process roll 210 and the second process roll 220 is changed to change the process speed.

In addition, a control unit separately provided on the basis of the tension of the second process film (Q2) measured by the load cell can adjust the rotation speed of the first feed roll 431 and the second feed roll 433 .

As a result, by measuring the tensile force applied to the thin film by using the process speed adjusting unit and controlling the process speed of the thin film based on the measured tensile force, the etching process can be more efficiently performed and the productivity can be improved.

The process liquid supply unit 300 includes a protective liquid supply unit 310 for connecting the protective liquid storage tank 121 and the protective liquid spray nozzle 240, And an etchant supply body 320 for connecting the etchant injection nozzles.

The protective liquid supply unit 310 includes a protective liquid supply pipe 311 connecting the protective liquid storage tank 121 and the protective liquid spray nozzle 240 and a protective liquid supply pipe 311 provided on the protective liquid supply pipe 311 A protective liquid pump 313 for pumping the conductive layer protective liquid, a protective liquid filter 313 provided on the protective liquid supply pipe 311 for filtering the conductive layer protective liquid, And a protective liquid flow rate control valve 317 disposed on the conductive layer protective liquid 311 for controlling the flow rate of the conductive layer protective liquid.

The etchant supply unit 320 includes an etchant supply pipe 321 for connecting the etchant storage tank 123 and the etchant injection nozzle 250 and an etchant supply pipe 321 for supplying the etchant solution to the etchant supply pipe 321, An etching solution pump 323 installed on the etchant supply pipe 321 for filtering the conductive layer etching solution and an etching solution pump 323 provided on the etchant supply pipe 321, And an etching liquid flow rate control valve 327 for controlling the flow rate of the etching liquid.

A control method of the roll-to-roll etching apparatus according to this embodiment will be described with reference to FIGS. 1 to 3. FIG.

First, the first process thin film Q1 coated with the conductive layer 30 on the upper surface of the resin layer 20 having the recessed pattern space 21 is unwound and transferred to the inside of the process chamber 100 S10).

Next, an etching process step of removing the excess conductive layer 33, which is the remaining conductive layer except for the conductive pattern 31 coated on the pattern space 21, of the conductive layer 30 is performed.

The etching process step includes a process liquid injection step, a surplus conductive layer removal step (S40), and a process speed control step (S50).

The process liquid spraying step is a process of spraying the process liquid onto the upper surface of the thin film to remove the excess conductive layer 33.

Specifically, the process liquid spraying step includes a protective liquid spraying step (S210) of spraying the conductive layer protective liquid onto the first process thin film (Q1) wound on the first process roll (210) And an etching liquid injection step S220 for spraying the conductive layer etching solution onto the second process thin film Q2 wound on the roll 220. [

The protective liquid spraying step S210 is a step of spraying the conductive layer protecting solution for protecting the conductive pattern 31 to the first process thin film Q1 wound on the first process roll 210 before the etching liquid injection step Thereby forming the protective liquid layer 40. [

The etchant injection step s220 is a process of spraying the conductive layer etchant for removing the excess conductive layer 33 onto the second process thin film Q2 wound on the second process roll 220. [

The surplus conductive layer removing step S40 may be performed such that the conductive layer etchant disposed between the second process roll 220 and the redundant conductive layer 33 interferes with the surplus conductive layer 33, The conductive layer 33 is removed.

That is, in the surplus conductive layer removing step S40, the height from the bottom surface of the second process thin film Q2 to the upper surface of the redundant conductive layer 33 and the height from the bottom surface of the second process thin film Q2 The conductive layer etchant interacts with the excess conductive layer 33 between the second process roll 220 and the second process thin film Q2 on the basis of the height difference to the upper surface of the conductive pattern 31 The excess conductive layer 33 is removed.

The step of adjusting the process speed S50 may include measuring a tension applied to the second process film Q2 and controlling the tension of the first process roll 210 and the second process roll 220 And an adjusting roll moving step of adjusting the position of the adjusting roll 230 disposed between the adjusting rolls.

In the adjusting roll moving step, the position of the adjusting roll 230 is moved so that the contact area where the thin film contacts the first process roll 210 and the second process roll 220 is changed, do.

Of course, in the process speed control step S50, the rotation speeds of the first conveying roll 431 and the second conveying roll 433 are set to be < RTI ID = 0.0 > The process speed of the thin film may be adjusted.

The process speed adjusting step (S50) may be performed during the process liquid injection step and the surplus conductive layer removing step.

When the etching process is completed, the second thin film Q3 from which the excess conductive layer 33 has been removed is wound and transferred to a subsequent process (S60). The protective liquid layer 40 applied to the second thin film Q3 may be removed in a cleaning process, which is one of the subsequent processes.

As a result, the etching process is simplified by removing the excess metal layer on the basis of the physical height difference between the conductive pattern and the redundant metal layer, and the etching process for removing the excess metal layer is continuously performed in one device line, .

Referring to Fig. 4, a second embodiment of a roll-to-roll etching apparatus according to the present invention will be described.

The roll-to-roll etching apparatus according to the present embodiment differs from the above-described first embodiment in that a plurality of process units are provided, and a process condition adjusting unit is provided between the plurality of process units.

Specifically, the roll-to-roll etching apparatus includes a first process chamber 510 and a second process chamber 520 disposed adjacent to each other, a first process unit 610 and a second process unit 620 disposed adjacent to each other, A first process liquid supply unit 710 for supplying the conductive layer protective liquid and the conductive layer etching liquid to the first process unit 610, a second process liquid supply unit 710 for supplying the conductive layer protective liquid and the conductive layer etchant to the second process unit 620, A first process liquid storage tank 511 disposed in a lower region of the first process chamber 510, a second process liquid storage tank 511 disposed in a lower region of the second process chamber 520, Two process liquid storage tanks 521, and a process condition adjustment unit.

A winding roll 410 is disposed at a front end of the first process chamber 510 and a winding roll 420 is disposed at a rear end of the second process chamber 520.

The first process unit 610 is disposed in the first process chamber 510 and the second process unit 620 is disposed in the second process chamber 520. In the first process chamber 620, The process condition adjusting unit is disposed between the chamber 510 and the second process chamber 520.

A first transfer roll 431 and a second transfer roll 433 for transferring a thin film are disposed in the first process chamber 510. Inside the second process chamber 520, A third conveying roll 435 and a fourth conveying roll 437 are disposed.

The first process liquid supply unit 710 is installed on the first process chamber 510 and the second process liquid supply unit 720 is installed on the second process chamber 520.

The detailed configuration of the first process chamber 510 and the second process chamber 520 is substantially the same as that of the process chamber 100 of the first embodiment described above, The second process unit 620 has substantially the same structure as the process unit 200 of the first embodiment described above, and the first process liquid supply unit 710 and the second process liquid supply unit 720 are described in detail The first process liquid storage tank 511 and the second process liquid storage tank 521 have substantially the same structure as the process liquid supply unit 300 of the first embodiment, And therefore the detailed description thereof will be omitted.

The process condition adjusting unit is disposed between the first process unit 610 and the second process unit 620 to measure the degree of process of the thin film passed through the first process unit 610, 2 < / RTI > process unit 620 to control the process conditions.

The process condition adjusting unit may include a measuring unit 800 for measuring the degree of process of the thin film passed through the first processing unit 610 and a second processing unit 620 based on the measurement result of the measuring unit 800. [ And a control unit (not shown) for controlling the process conditions in the control unit (not shown).

The measuring unit 800 can measure a process area, a process speed, a tension, a supply amount of the process solution supplied to the first process unit 610, and the like to the thin film passed through the first process unit 610 .

For example, the measuring unit 800 includes a light emitting unit 810 disposed outside the one side of the thin film passed through the first processing unit 610 to emit light toward the thin film, And a light receiving unit 820 disposed in a direction opposite to the light emitting unit 810 to receive light passing through the thin film.

Based on the difference between the amount of light emitted from the light emitting unit 810 and the amount of light detected by the light receiving unit 820, the degree of process of the thin film passed through the first processing unit 610, It can be confirmed how much the layer 33 has been removed.

Of course, the present invention is not limited to the above-described embodiment, and the measuring unit 800 measures the amount of reflection of the light irradiated on the thin film passed through the first processing unit 610, , An image of the thin film passed through the first processing unit 610 may be obtained by using a camera to check the process degree of the thin film.

The control unit controls the tension applied to the thin film to be etched by the second processing unit 620 based on the measurement result of the measuring unit 800 or changes the position of the adjusting roll or the rotating speed of the feeding roll The overall process condition is controlled by controlling the process speed or by controlling the supply amount of the process liquid.

As a result, in the etching apparatus having a plurality of process units, it is possible to check the process progress of the thin film passing through the preceding process unit in real time using the process condition adjusting unit, and control the process conditions of the post- Thereby making it possible to more efficiently control the overall process conditions.

Referring to FIGS. 4 and 5, a control method of the roll-to-roll etching apparatus according to the present embodiment will now be described.

First, a thin film coated with a conductive layer (30 in FIG. 2) is applied to the upper surface of a resin layer (20 in FIG. 2) having a recessed pattern space (21 in FIG. 2) (S100).

Next, a first etching step for primarily removing the redundant conductive layer (33 in FIG. 2), which is a conductive layer other than the conductive pattern (31 in FIG. 2) coated on the pattern space, is performed do.

The first etching step includes a first protective liquid injection step (S210), a first etching liquid injection step (S220), and a surplus conductive layer primary removal step (S230). The first protective liquid jetting step S210, the first etching liquid jetting step S220 and the redundant conductive layer primary removing step S230 are the same as the protective liquid jetting step S20 of the first embodiment, (S30), and the surplus conductive layer removing step (S40), detailed description thereof will be omitted.

The first etching processing step may include a first processing speed adjusting step substantially equivalent to the processing speed adjusting step (S50) of the first embodiment described above.

Next, the process conditions of the second process unit 620 are adjusted based on the measured process degree after measuring the process degree of the thin film passed through the first process unit 610 Is performed (S310, S320).

Next, a second etching step for removing the excess conductive layer of the thin film via the first processing unit 610 is performed.

The second etching step includes a second protective liquid injection step (S410), a second etching liquid injection step (S420), and a surplus conductive layer secondary removal step (S430). The second protective liquid injecting step S410, the second etching liquid injecting step S420 and the redundant conductive layer second removing step S430 are the same as the first embodiment except that the protective liquid jetting step S20, (S30), and the surplus conductive layer removing step (S40), detailed description thereof will be omitted

Next, when the second etching step is completed, the thin film from which the excess conductive layer has been removed is wound (S500)

6 and 7, a third embodiment of a roll-to-roll etching apparatus according to the present invention will be described.

The roll-to-roll etching apparatus according to the present embodiment includes a take-up roll 410, a take-up roll 420, a plurality of feed rolls 431, 433, 435 and 437, a process chamber 1100, A mixing process liquid supply unit 900 for supplying the mixed process liquid to the first process unit 1200 and the second process unit 1300, the first process unit 1200 and the second process unit 1300, And a control unit.

The winding roll 410, the winding roll 420, the feed rolls 31, 433, 435 and 437 and the process condition adjusting unit are constituted by the winding roll 410 of the second embodiment, the winding roll 420 ), The transport rolls 31, 433, 435, 437 and the process condition adjusting unit, detailed description thereof will be omitted.

Here, the mixing process liquid is a mixed solution in which a conductive layer protecting liquid for protecting the conductive pattern 31 and a conductive layer etching liquid for removing the excess conductive layer 33 are mixed.

The process chamber 1100 includes a first chamber housing 1110 and a second chamber housing 1120 forming a separate space therein and a mixing process liquid storage tank 1130 disposed at a lower portion of the process chamber 100 ).

The process condition adjusting unit is disposed between the first chamber housing 1110 and the second chamber housing 1120.

The mixing process solution storage tank 1130 communicates the first chamber housing 1110 with the lower portion of the second chamber housing and the mixing process solution is stored in the mixing process solution storage tank 1130.

As a result, the upper region of the process chamber 1100 is separated into the first chamber housing 1110 and the second chamber housing 1120 to form a separate space, and the lower region of the process chamber 1100 is mixed with one And is communicated with the process liquid storage tank 1130.

The first processing unit 1200 has substantially the same structure as the processing unit of the first embodiment described above. However, both the first injection nozzle 1240 and the second injection nozzle 1250 provided in the first processing unit 1200 inject the mixed solution into the thin film.

Specifically, the first injection nozzle 1240 injects the liquid mixture into the first process film Q1 wound on the first process roll 1210, and the second injection nozzle 1250 injects the mixture The process liquid is sprayed onto the second process thin film Q4 wound on the second process roll 1230. [ Here, a thin film including the first process thin film (Q1) and the second process thin film (Q4) is defined as a first thin film.

 The first process thin film Q1 in this embodiment is the same as the first process thin film Q1 in the first embodiment described above, but the second process thin film Q4 in this embodiment is the same as the above- Which is different from the second process thin film Q2 in the first embodiment.

Specifically, in the second process thin film Q4, the protection liquid layer (40 in Fig. 2) is not separately applied, unlike the first embodiment described above. This is because, when the mixing process liquid is injected into the first process thin film Q1, only the solution corresponding to the conductive layer protecting solution can not form a separate layer.

As a result, the surplus conductive layer 33 is removed between the first process roll 1210 and the first process film Q1 by the abrasive grains 1 included in the mixing process solution, The surplus conductive layer 33 is also removed between the process roll 1220 and the second process film Q4 by the abrasive grains 1 included in the mixing process solution.

Of course, the process speed controller included in the first process unit 1200 may include a thin film wound on the first control roll 1230 disposed between the first process roll 1210 and the second process roll 1220 The tension can be measured and the process speed of the thin film can be controlled based on this measurement.

Since the second processing unit 1300 has substantially the same structure as the first processing unit 1200, a description thereof will be omitted.

The mixing process liquid supply unit 900 includes a mixing process liquid supply pipe 910, a mixing process liquid pump 930, a mixing process liquid filter 920 and a plurality of flow control valves 941, 942, 943, 944).

The mixing process liquid supply pipe 910 is connected to the first injection nozzle 1240 and the second injection nozzle 1250 provided in the first process unit 1200 and the first injection nozzle 1240 and the second injection nozzle 1250 provided in the second process unit 1300, The injection nozzle and the second injection nozzle are connected to the mixing process liquid storage tank 1130 at the same time.

The mixing process solution pump 930 is installed on the mixing process solution supply pipe 910 to pump the mixing process solution into the first process unit 1200 and the second process unit 1300.

The mixing process liquid filter 920 is installed on the mixing process liquid supply pipe 910 to filter foreign substances contained in the mixing process liquid.

The plurality of flow control valves 941, 942, 943 and 944 are installed on the mixing process liquid supply pipe 910 and are supplied to the first process unit 1200 and the second process unit 1300 Thereby controlling the flow rate of the mixing process liquid.

6 to 8, a control method of the roll-to-roll etching apparatus according to the present embodiment is as follows.

First, the first thin film coated with the conductive layer 30 on the upper surface of the resin layer 20 having the recessed pattern space 21 is drawn and transferred to the inside of the process chamber 1100 (S600).

Next, the redundant conductive layer 33, which is the remaining conductive layer except for the conductive pattern 31 coated on the pattern space 21, is removed from the conductive layer 30 by the first processing unit 1200 A first etching process step is performed

The first etching step S710 includes a first mixing step S710, a second elimination step S720, a second mixing step S730, a surplus conductive layer second removing step S740, .

In the first mixing step S710, the mixing process liquid is primarily injected into the first process thin film Q1 wound on the first process roll 1210 of the first process unit 1200 Process.

The surplus conductive layer primary removal step S720 may include a step of removing the surplus conductive layer 33 and the surplus conductive layer 333 in a process of rotating the first process thin film Q1 in a state of being wound around the first process roll 1210, And removing the excess conductive layer 33 while interacting with each other.

Here, the surplus conductive layer 33 is removed based on the height difference between the conductive pattern 31 and the excess conductive layer 33. Specifically, when the first process thin film (Q1) is rotated in a state of being wound around the first process roll (1210), the excess conductive layer (33) is in contact with the abrasive grains (1) It is worn out and removed.

In the second mixing step S730, the mixing process liquid is secondarily injected into the second process thin film Q4 wound around the second process roll 1220 of the first process unit 1200 Process.

The surplus conductive layer secondary elimination step S740 may include a step of removing the surplus conductive layer 33 and the surplus conductive layer 33 in the course of rotating the second process thin film Q4 in a state of being wound around the second process roll 1220, And secondly removing the excess conductive layer 33 while interacting with each other.

Of course, in the control method of the roll-to-roll etching apparatus according to the present embodiment, the tension of the thin film wound on the first adjusting roll 1230 is measured substantially the same as the process speed adjusting step of the first embodiment described above, A first process speed adjusting step of adjusting the speed may be performed.

Next, a process condition adjustment process for controlling process conditions in the second process unit 1300 based on the measured process degree information after measuring the process degree of the thin film passed through the first process unit 1200 Is performed (S810, S820).

Next, the excess conductive layer 33, which is the remaining conductive layer except for the conductive pattern 31 coated on the pattern space 21 of the conductive layer 30, is removed by the second processing unit 1300 A second etching process step is performed

The second etching step S910 includes a third mixing step S910, a third removing step S920, a fourth mixing step S930, a fourth surplus removing step S940, .

Since the detailed processes of the second etching process step are repeated substantially the same as the detailed processes of the first etching process step, the redundant conductive layer 33 is removed, and a detailed description thereof will be omitted.

However, the process conditions in the second etching process step may be different from the process conditions in the first etching process step due to the change in the process conditions in the process condition adjusting step. For example, rough scratches are formed in the redundant conductive layer 33 in the first etching process step due to the change in the process conditions, while in the second etching process, the redundant conductive layer 33 is finely It will be removed.

Next, when the second etching step is completed, the third thin film Q5 from which the excess conductive layer 33 has been removed is wound and moved to a subsequent step (S1000). Unlike the second thin film Q3 of the first embodiment described above, the third thin film Q5 is not provided with a protective liquid layer (40 in Fig. 2).

As described above, the present invention is not limited to the above-described specific preferred embodiments, and various changes and modifications may be made by those skilled in the art without departing from the scope of the present invention as claimed in the claims. And such variations are within the scope of the present invention.

10: base film 20: resin layer
21: pattern space 30: conductive layer
31: Conductive pattern 33: Surplus conductive layer
40: protective liquid layer 100, 1100: process chamber
110: chamber housing 120: process liquid storage tank
121: Protective liquid storage tank 123: Etchant storage tank
200: process unit 210: first process roll
220: second process roll 230: regulating roll
240: protective liquid spray nozzle 250: etchant spray nozzle
300: Process liquid supply unit 310: Protective liquid supply unit
320: Etching solution supply body 410:
420: take-up roll 510: first process chamber
520: second process chamber 610, 1200: first process unit
620, 1300: Second process unit 710: First process liquid supply unit
720: second process liquid supply unit 800:
900: Mixing process liquid supply unit 1130: Mixing process liquid storage tank

Claims (12)

A transfer roll for transferring a first thin film having a conductive layer coated on an upper surface of a resin layer having a recessed pattern space; And,
And a processing unit for removing excess conductive layers which are conductive layers other than the conductive pattern coated on the pattern space among the conductive layers,
Wherein the process unit comprises a process roll on which the first thin film is wound and a process liquid spray nozzle for spraying the process liquid onto the first thin film to remove the excess conductive layer,
Based on the difference in height from the bottom surface of the first thin film to the top surface of the redundant conductive layer and the height from the bottom surface of the first thin film to the top surface of the conductive pattern, Wherein the redundant conductive layer is removed while interacting with the redundant conductive layer between the thin films. The method according to claim 1,
Wherein when the first thin film rotates along the process roll, the excess conductive layer is worn away due to friction with abrasive particles included in the process liquid. The method according to claim 1,
Wherein the process roll includes a first process roll and a second process roll disposed at a distance from the first process roll and the second process roll, wherein the process unit is disposed between the first process roll and the second process roll, Further comprising a process speed adjusting unit capable of adjusting a process speed by measuring a tension. The method of claim 3,
Wherein the process speed adjusting unit includes a control roll disposed between the first process roll and the second process roll and wound with the first thin film, a control roll moving body for moving the position of the control roll, And a load cell for measuring a tension applied to the roll-to-roll etching apparatus. The method of claim 3,
Wherein the process liquid includes a conductive layer protective liquid for protecting the conductive pattern and a conductive layer etchant for removing the excess conductive layer, wherein the conductive layer protective liquid and the conductive layer etchant are independently sprayed,
Wherein the process liquid spray nozzle comprises: a protective liquid spray nozzle for spraying the conductive layer protective liquid onto the first thin film wound on the first process roll; and a protective liquid spray nozzle for spraying the conductive layer etchant on the first And an etchant injection nozzle for spraying the thin film onto the thin film. 6. The method of claim 5,
A protective liquid storage tank in which the conductive layer protecting liquid is stored, and an etchant storage tank in which the conductive layer etching liquid is stored, wherein the protective liquid storage tank and the etchant storage tank are independently provided, And the nozzle and the etchant injection nozzle are individually connected to each other. The method of claim 3,
Wherein the process liquid is a mixture of a conductive layer protective liquid for protecting the conductive pattern and a conductive layer etchant for removing the excess conductive layer,
Wherein the process liquid injection nozzle comprises: a first injection nozzle for spraying the mixing process solution onto the first thin film wound on the first process roll; and a second thin film formed on the first thin film wound on the second process roll, And a second injection nozzle for spraying the droplets onto the substrate. 8. The method of claim 7,
A mixing process liquid supply tank for connecting the mixing process liquid storage tank to the first injection nozzle and the second injection nozzle and a mixing process liquid supply tank for connecting the mixing process liquid supply tank And a mixing process liquid filter for filtering the mixing process liquid on the mixing process liquid supply pipe. 9. The method according to any one of claims 1 to 8,
Wherein the processing unit includes a first processing unit and a second processing unit disposed next to each other and is arranged between the first processing unit and the second processing unit to measure the degree of processing of the thin film via the first processing unit Further comprising a process condition adjusting unit for adjusting a process condition in the second process unit after the first process unit has been removed. A transfer step of transferring a first thin film having a conductive layer coated on an upper surface of a resin layer having a recessed pattern space; And,
And an etching process step of removing an excess conductive layer which is the remaining conductive layer except for the conductive pattern coated on the pattern space of the conductive layer,
Wherein the etching step includes a process liquid spraying step of spraying the process liquid onto the first thin film wound on the process roll to remove the excess conductive layer,
The process liquid is supplied to the process roll from the bottom of the first thin film to the top surface of the redundant conductive layer and from the bottom surface of the first thin film to the top surface of the conductive pattern, And removing an excess conductive layer while interacting with the excess conductive layer between the thin films. 11. The method of claim 10,
Wherein the process roll includes a first process roll and a second process roll disposed at spaced apart intervals, wherein the etching process step moves the position of the control roll disposed between the first process roll and the second process roll Further comprising a process speed adjusting step of adjusting a process speed of the thin film. The method according to claim 10 or 11,
Wherein the processing unit includes a first processing unit and a second processing unit disposed next to each other, wherein the processing unit is disposed between the first processing unit and the second processing unit via the first processing unit Further comprising a process condition adjusting step of adjusting a process condition in the second process unit after measuring a process degree of the thin film.
KR1020140045818A 2014-04-17 2014-04-17 Roll to Roll apparatus for etching and Controlling method thereof KR20150120549A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220144686A (en) * 2021-04-20 2022-10-27 주식회사 참그래핀 The roll-to-roll graphine film manufacturing apparatus provided with twin chamber
CN115558928A (en) * 2022-08-31 2023-01-03 浙江众凌科技有限公司 Evaporation substrate etching device and method based on surface flatness
CN115558928B (en) * 2022-08-31 2024-10-22 浙江众凌科技有限公司 Evaporation substrate etching device and method based on surface flatness

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220144686A (en) * 2021-04-20 2022-10-27 주식회사 참그래핀 The roll-to-roll graphine film manufacturing apparatus provided with twin chamber
CN115558928A (en) * 2022-08-31 2023-01-03 浙江众凌科技有限公司 Evaporation substrate etching device and method based on surface flatness
CN115558928B (en) * 2022-08-31 2024-10-22 浙江众凌科技有限公司 Evaporation substrate etching device and method based on surface flatness

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