KR20150084327A - Solar cell module - Google Patents

Abstract

A solar cell module according to an embodiment of the present invention includes: first and second rear side junction solar cells which include, respectively, first to fourth pads for a first electrode located on the rear side of a semi-conductive substrate, and first to fourth pads for a second electrode located on the rear side of the semi-conductive substrate; and an interconnector which connects the first and second rear side junction solar cells, electrically, wherein the interconnector includes a bridge portion located in a space between the first and second rear side junction solar cells, and a conductive metal including first to fourth tab portions protruding from the bridge portion toward the pad for the first electrode of the first rear side junction solar cell and the pad for the second electrode of the second rear side junction solar cell. The first to fourth tab portions are joined to the pad for the first electrode of the first rear side junction solar cell and the pad for the second electrode of the second rear side junction solar cell, respectively.

Description

Solar cell module {SOLAR CELL MODULE}

The present invention relates to a solar cell module having a plurality of interdigitated back contact (IBC) solar cells.

Recently, as energy resources such as oil and coal are expected to be depleted, interest in renewable energy to replace them has increased, and solar cells that produce electric energy from solar energy are attracting attention.

A typical solar cell has a substrate and an emitter layer each of which is made of a semiconductor of a different conductive type such as a p-type and an n-type, and electrodes respectively connected to the substrate and the emitter. At this time, a p-n junction is formed at the interface between the substrate and the emitter.

When light is incident on such a solar cell, electrons in the semiconductor become free electrons (hereinafter referred to as 'electrons') due to a photoelectric effect, and electrons and holes are attracted to n Type semiconductor and the p-type semiconductor, for example, toward the emitter portion and the substrate, respectively. And the transferred electrons and holes are collected by the respective electrodes electrically connected to the substrate and the emitter portion.

In recent years, an interdigitated back contact solar cell, which improves the efficiency of the solar cell by increasing the light receiving area by forming the electronic current collector and the collector current collector on the rear surface of the substrate, that is, Is being developed.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a solar cell module capable of suppressing occurrence of a current loss and capable of obtaining high output.

A solar cell module according to an embodiment of the present invention includes first to fourth first electrode pads (first electrodes) disposed on the rear surface of a semiconductor substrate, first and second electrodes A first rear-junction solar cell and a second rear-junction solar cell each including a fourth pad for a fourth electrode (second electrode); And an interconnector electrically connecting the first rear-surface solar cell and the second rear-surface solar cell, wherein the interconnector includes a bridge portion located in a space between the first and second rear- And a first to a fourth tab portion protruding from the bridge portion toward the first electrode pad of the first rear-bonding solar cell and the second electrode pad of the second rear-surface solar cell, And the first to fourth tab portions are respectively bonded to the first electrode pad of the first rear-bonding solar cell and the second electrode pad of the second rear-bonding solar cell, respectively.

At least one surface of the conductive metal may be coated with a coating layer comprising tin-based solder.

The solar cell module includes a light-transmissive front substrate positioned on a front surface side of a rear-joining solar cell, a rear substrate positioned on a back surface side of the rear-joining solar cell, and a rear substrate disposed between the front substrate and the rear substrate And may further include a sealing material for sealing the plurality of rear-bonding solar cells.

The pads for the first electrode and the pads for the second electrode may each be comprised of 5 to 100, and the interconnector includes the same number of tabs as the number of the pads for the first electrode and the pads for the second electrode .

At this time, the number of pads for the first electrode and the number of pads for the second electrode may increase as the size of the semiconductor substrate increases and the required output of the solar cell increases.

For example, a semiconductor substrate having a size of 3 inches may be provided with four first electrode pads and four second electrode pads. In a semiconductor substrate having a size of 4 inches, six first electrodes A pad for a first electrode and a pad for a second electrode may be provided on a semiconductor substrate having a size of 5 inches.

However, the number of pads for the first electrode and the number of pads for the second electrode may be variously changed within the range of 4 to 100 according to the size of the semiconductor substrate or the required output power of the solar cell.

The pads for the first electrode may be located on the first corner of the rear surface of the semiconductor substrate and the pads for the second electrode may be located on the second corner of the rear surface of the semiconductor substrate facing the first corner.

Alternatively, the pads for the first electrode may be located at the first corner and the second corner, respectively, of the rear surface of the semiconductor substrate, and the pads for the second electrode may be located at the center of the rear surface of the semiconductor substrate.

A rear-bonding solar cell includes: a plurality of first electrodes located on a rear surface of a semiconductor substrate and extending perpendicularly to a first edge and a second edge; And a plurality of second electrodes alternately arranged with the first electrodes along the longitudinal direction of the first and second edges at the rear surface of the semiconductor substrate and extending in the same direction as the plurality of first electrodes.

The rear-bonding solar cell includes: a first electrode current collector extending along a longitudinal direction of the first and second corners and connecting ends of the plurality of first electrodes at a first corner; And a second electrode current collecting electrode extending in the same direction as the first electrode current collecting electrode and connecting the ends of the plurality of second electrodes at the second edge side.

The pads for the first electrode may be electrically and physically connected to the first electrode current collecting electrode and the pads for the second electrode may be electrically and physically connected to the second electrode current collecting electrode.

The interval between the electrode pads of the same polarity may be 1 mm to 80 mm and the interval between the electrode pads of the same polarity may be increased or decreased in inverse proportion to the number of pads for the same polarity .

The planar areas of the pads for the first electrode and the pads for the second electrode may be respectively 1 mm 2 to 780 mm 2. The planar area of each of the pads for the first electrode and the planar area of each of the pads for the second electrode may be the same It can be increased or decreased in proportion to the interval between the pads for the electrode.

The pads for the first electrode may be located at equal intervals from the first edge, and the pads for the second electrode may be located at equal intervals from the second edge.

A solar cell module having a rear-bonding solar cell having such a feature can be manufactured by appropriately adjusting the size and the number of the electrode pads of the rear-bonding solar cell according to the size of the semiconductor substrate or the required output power, The output of the solar cell module can be improved.

FIG. 1 is a plan view schematically showing a rear surface of a rear-bonding solar cell according to a first embodiment of the present invention.
Fig. 2 is a partial sectional view in the second direction of Fig. 1. Fig.
FIG. 3 is a cross-sectional view of a main portion of a solar cell module having a rear-bonding solar cell shown in FIG. 1. FIG.
4 is a plan view according to one embodiment of the interconnector used in the solar cell module of FIG.
5 is a graph showing experimental results of joule loss according to the number of electrode pads.
FIG. 6 is a plan view schematically showing a rear surface of a rear-bonding solar cell according to a second embodiment of the present invention.
FIG. 7 is a plan view schematically showing a rear surface of a rear-bonding solar cell according to a third embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It is to be understood that the present invention is not intended to be limited to the specific embodiments but includes all changes, equivalents, and alternatives falling within the spirit and scope of the present invention.

In describing the present invention, the terms first, second, etc. may be used to describe various components, but the components may not be limited by the terms. The terms may only be used for the purpose of distinguishing one element from another.

For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The term "and / or" may include any combination of a plurality of related listed items or any of a plurality of related listed items.

Where an element is referred to as being "connected" or "coupled" to another element, it may be directly connected or coupled to the other element, but other elements may be present in between Can be understood.

On the other hand, when it is mentioned that an element is "directly connected" or "directly coupled" to another element, it can be understood that no other element exists in between.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions may include plural expressions unless the context clearly dictates otherwise.

In the present application, the terms "comprises", "having", and the like are used interchangeably to designate one or more of the features, numbers, steps, operations, elements, components, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, or combinations thereof.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. When a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case directly above another portion but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.

Unless otherwise defined, all terms used herein, including technical or scientific terms, may have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

Terms such as those defined in commonly used dictionaries can be interpreted as having a meaning consistent with the meaning in the context of the relevant art and are, unless expressly defined in the present application, interpreted in an ideal or overly formal sense .

In addition, the following embodiments are provided to explain more fully to the average person skilled in the art. The shapes and sizes of the elements in the drawings and the like can be exaggerated for clarity.

The present invention will now be described with reference to the accompanying drawings.

In the following embodiments, the rear-bonding solar cell in which the first electrode, the second electrode having the opposite polarity to the first electrode, the first electrode collector, and the second electrode collector are both disposed on the rear surface of the semiconductor substrate, (Or a second electrode), a first electrode collector, and a second electrode collector are located on a rear surface of a semiconductor substrate, the second electrode It can also be applied to solar cells with MWT (Metal Wrap Through) structure.

Hereinafter, a rear-bonding solar cell according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG.

FIG. 1 is a schematic view showing a rear surface of a rear-bonding solar cell, and FIG. 2 is a partial sectional view in the second direction of FIG.

Referring to the drawings, a rear-bonding solar cell 100 includes a first conductive type semiconductor substrate 110, a light receiving surface of a semiconductor substrate 110, for example, a front dielectric layer 120 formed on a front surface, An antireflection film 130 formed on the semiconductor substrate 120, a first doping portion 141 formed on the other surface, that is, a back surface of the semiconductor substrate 110 and doped with impurities of the first conductivity type at a high concentration, A second doping portion 142 formed on the rear surface of the semiconductor substrate 110 at a position adjacent to the first doping portion 141 and highly doped with an impurity of the second conductivity type opposite to the first conductivity type, A rear dielectric layer 150 that exposes a portion of the first doping region 141 and a portion of the second doping region 142 and a plurality of electrodes 160 for electrons that are electrically connected to the first doping region 141 exposed by the rear dielectric layer 150 (Hereinafter, referred to as a "first electrode") and electrically connected to the second doped portion 142 exposed by the rear dielectric layer 150 A plurality of electronic pads 160b positioned on the first edge E1 side of the rear surface of the semiconductor substrate 110, hereinafter, referred to as 'first electrodes' And a plurality of conductive pads 170b (hereinafter referred to as 'second pad') disposed on the second edge E2 facing the first edge E1 of the rear surface of the semiconductor substrate 110, Quot;).

Here, the first edge E1 of the semiconductor substrate 110 refers to a corner located on the left side in the first direction X-X 'and the second edge E2 corresponds to the edge located on the left side in the first direction X- X ') to the right.

Therefore, the first edge E1 and the second edge E2 are each formed to be long in the second direction Y-Y 'orthogonal to the first direction X-X'.

The plurality of first electrodes 160 extend in a direction orthogonal to the first edge E1 and the second edge E2 of the semiconductor substrate 110, that is, in the first direction X-X ' The two electrodes 170 alternate with the first electrode 160 along the longitudinal direction Y-Y 'of the first edge E1 and the second edge E2, that is, in the second direction Y-Y' And extends in the same direction as the plurality of first electrodes 160, that is, in the first direction (X-X ').

The left ends of the plurality of first electrodes 160 are electrically connected to the first electrode pad 160b at the first edge E1 side and the right ends of the plurality of second electrodes 170 are electrically connected to the second edge E1 to the second electrode pad 170b.

The light receiving surface of the semiconductor substrate 110 may be formed as a texturing surface having a plurality of protrusions 111. In this case, the front dielectric layer 120 and the anti-reflection film 130 are also formed as a textured surface.

The semiconductor substrate 110 is made of a first conductive type, for example, n-type single crystal silicon. Alternatively, the semiconductor substrate 110 may have a p-type conductivity type and may be made of polycrystalline silicon. In addition, the semiconductor substrate 110 may be formed of a semiconductor material other than silicon.

Since the light receiving surface of the semiconductor substrate 110 is formed as a texturing surface having a plurality of projections and depressions 111, the light absorption rate is increased and the efficiency of the solar cell is improved.

The front dielectric layer 120 formed on the light receiving surface of the semiconductor substrate 110 on which the plurality of protrusions and depressions 111 are formed is made of a material such as impurities of pentavalent elements such as phosphorus (P), arsenic (As), antimony (Sb) ), And can act as a front surface field (FSF) similar to a back surface field (BSF). Therefore, electrons and holes separated by incident light are prevented from recombining and disappearing on the surface of the light receiving surface of the semiconductor substrate 110.

The antireflection film 130 formed on the surface of the front dielectric layer 120 is formed of a silicon nitride film (SiNx), a silicon oxide film (SiO ₂ ), or the like. The antireflection film 130 reduces the reflectance of incident sunlight and increases the selectivity of a specific wavelength region, thereby enhancing the efficiency of the solar cell.

The n-type impurities are doped at a higher concentration than the semiconductor substrate 110 in the plurality of first doping portions 141 formed on the rear surface of the semiconductor substrate 110 and the plurality of second doping portions 142 are doped with p- And is doped at a high concentration. Accordingly, the second doping portion 142 forms a p-n junction with the n-type semiconductor substrate 110.

The first doping portion 141 and the second doping portion 142 serve as a path for movement of carriers (electrons and holes).

The rear dielectric layer 150 that exposes a portion of the first doping portion 141 and the second doping portion 142 may be formed of a silicon oxide film (SiO ₂ ), a silicon nitride film (SiN x), or a combination thereof.

The rear dielectric layer 150 may serve as a BSF that prevents recombination of carriers separated into electrons and holes and reduces the amount of light that is reflected to the inside of the solar cell to prevent incident light from being lost to the outside.

The backside dielectric layer 150 may be formed as a single layer, but may have a multi-layer structure such as a bilayer or triple layer.

The first electrode 160 is formed on the first doped portion 141 not covered with the rear dielectric layer 150 and the rear dielectric layer 150 adjacent to the first doped portion 141, A second electrode 170 is formed on the second undoped portion 142 and the rear dielectric layer 150 adjacent to the second doped portion 142.

In the rear surface of the semiconductor substrate 110, first to fourth first electrode pads 160b electrically connected to a plurality of first electrodes are formed on the first edge E1 on the left side of FIG. 1 And first to fourth pads 170b for the second electrode which are electrically connected to the plurality of second electrodes 170 are formed on the second edge E2 located on the right side of FIG. The fourth pad 160b for the first electrode is electrically and physically connected to the first electrode current collector 160a extending in the second direction Y-Y ', and the first to fourth electrodes 160b, The pad 170b for use is electrically and physically connected to the second electrode current collecting electrode 170a extending in the second direction.

Here, the pads 160b and 170b are formed to be larger in area than the electrodes 160, 160a, 170, and 170a, have a larger thickness, or have excellent conductivity.

Since the pads 160b and 170b are formed in a larger area or thicker than the electrodes 160 and 160a and 170 and 160a and are formed of a material having excellent conductivity, 160, 160a, 170, and 160a.

Therefore, the tab portion of the interconnector can be stably bonded to the pad of the solar cell, and the current generated in the solar cell can be well transmitted to the interconnector.

In the rear-bonding solar cell having such a structure, the first through fourth first electrode pads 160b and the first through fourth second electrode pads 170b have the following characteristics.

More specifically, the first electrode pad 160b and the second electrode pad 170b are provided in various numbers within a range of 4 to 100 according to the size of the semiconductor substrate 110, And the number of pads increases as the required output size increases.

For example, the rear-bonding solar cell 100 of the present embodiment includes a semiconductor substrate 110 having a size of 3 inches, and on the rear surface of the semiconductor substrate 110, The pads 160b and the first to fourth pads 170b for the second electrode are located.

The first to fourth first electrode pads 160b are located at the same interval D1 from the first edge E1 and the first to fourth second electrode pads 170b are positioned at the second Are positioned at the same distance D2 from the edge E2.

At this time, the interval D1 between the first edge E1 and the first electrode pad 160b and the interval D2 between the second edge E2 and the second electrode pad 170b may be equal to each other However, they may be different.

The interval D3 between the electrode pads of the same polarity can be variously changed within the range of 1 mm to 80 mm, and the interval D3 between the electrode pads of the same polarity for the electrodes of the same polarity It can be increased or decreased in inverse proportion to the number of pads.

For example, as the number of electrode pads of the same polarity increases, the interval D3 between the electrode pads of the same polarity decreases, and conversely, as the number of pads for the same polarity decreases, The spacing D3 between the electrodes increases.

The planar area of the first electrode pad 160b and the second electrode pad 170b may be variously formed within a range of 1 mm2 to 780 mm2. The planar area of the first electrode pad 160b and the second The planar area of the electrode pad 170b can be increased or decreased in proportion to the interval D3 between pads for the same polarity.

For example, when the distance D3 between the electrode pads of the same polarity is increased, the planar area of the pads is increased, and when the spacing D3 between the pads for the same polarity is decreased, the planar area of the pads is decreased.

Similarly, the plane of the first electrode pad 160b and the plane of the second electrode pad 170b may increase or decrease in inverse proportion to the number of pads.

For example, as the number of pads increases, the planarity of each pad decreases, and as the number of pads decreases, the planarity of each pad increases.

However, the planarity of the pad may be formed to be constant regardless of the number of the pads and the interval between the pads of the same polarity.

As shown in FIG. 5, the rear-bonding solar cell having such a structure has a joule loss of about 70% reduced compared with the case where three first electrode pads and two second electrode pads are provided have.

In this case, the relative loss is reduced by about 70% when the joule loss is reduced by about 70%. When the joule loss is 100% when three first and second electrode pads are provided, It means that about 70% of the joule loss occurs in the rear-bonding solar cell in which four pads for the first electrode and four pads for the second electrode are provided.

Accordingly, since the loss occurring when current is transferred between neighboring solar cells is reduced as compared with the conventional solar cell module, the output of the solar cell module including a plurality of rear junction solar cells is improved.

The first electrode pad 160b is located on the first edge E1 side of the semiconductor substrate 110 and the second electrode pad 170b is located on the second edge E2 side of the semiconductor substrate 110 However, at least one pad of the first electrode pad 160b and the second electrode pad 170b may be located at the center of the inner region of the semiconductor substrate.

For example, the first electrode pad 160b may be positioned on the first edge E1 and the second edge E2 of the rear surface of the semiconductor substrate 110, and the second electrode pad 170b may be positioned on the semiconductor Or may be located at the center of the rear surface of the substrate 110. [

Hereinafter, a solar cell module including a rear-bonding solar cell according to a first embodiment of the present invention will be described with reference to FIGS. 3 and 4. FIG.

FIG. 3 is a cross-sectional view of a main portion of the solar cell module, and FIG. 4 is a plan view according to an embodiment of the interconnector used in the solar cell module of FIG.

The solar cell module having a plurality of rear-junction solar cells includes an interconnector 200 for electrically connecting two neighboring rear-junction solar cells, a sealing material 300 sealing the rear-junction solar cell, Permeable front substrate 310 and a back sheet 320. [

Hereinafter, any one of the two rear-bonding solar cells adjacent to each other will be referred to as a first solar cell 100A and the other solar cell will be referred to as a second solar cell 100B.

The interconnector 200 is used to connect the second electrode pad 170b of the first solar cell 100A adjacent to the first electrode pad 160b of the second solar cell 100B.

The interconnect 200 includes a conductive metal 210 and a coating layer 260 including a tin (Sn) -based solder may be formed on at least a front surface of the conductive metal 210 . As an example, the coating layer 260 may be located on the front, back, and sides of the conductive metal 210.

The conductive metal 210 of the interconnector 200 is spaced at a predetermined distance in a second direction Y-Y 'orthogonal to the first direction X-X' (Y-Y ') so as to connect the four tab portions 220 connected to the first tabs 160b and 170b and the four tabs 220 separated in the second direction Y-Y' And a bridge portion 230 located in a space between the first rear-surface solar cell and the second rear-surface solar cell.

4, the four tab portions provided in the conductive metal 210 of the interconnector 200 are connected to the first and second tabs 310 and 320, respectively, located at both ends of the conductive metal 210 in the second direction Y-Y ' The second tab portion 220-2 and the third tab portion 220-3 located between the first tab portion 220-1 and the second tab portion 220-2 and the fourth tab portion 220-3, And each tab portion may be bonded to the corresponding pad by an adhesive agent 250 formed of a tin (Sn) -based solder paste or a silver (Ag) -based conductive paste.

At this time, the intervals between the tabs may be equal to each other. Alternatively, the intervals between the tabs may be different from each other.

A slit 240 or a slot may be formed in the conductive metal 210 to absorb thermal stress applied to the interconnect 200 as shown by a dotted line. The slit 240 or the slot may be formed in various shapes .

The front substrate 310 may be formed of a low iron tempered glass and the back sheet 320 may be formed of Tedlar / PET / Tedlar TPE, Tedlar / PET / EVA TPE, Tedlar / Al foil / Tedlar), Tedlar / PET / Al foil / Tedalr, Tedlar / PET / Oxide / Tedlar TPAP, PEN / Al foil / PET) or polyester (polyester).

Hereinafter, a back-junction solar cell according to another embodiment of the present invention will be described with reference to FIGS. 6 and 7. FIG.

The rear-bonding solar cell shown in FIG. 6 has a semiconductor substrate 100 'of which size is increased by one inch as compared with the rear-facing solar cell shown in FIG. 1, and the rear- Junction semiconductor solar cell shown in the embodiment of FIG.

That is, the semiconductor substrate 110 'of the rear-bonding solar cell shown in FIG. 6 is formed to have a size of 4 inches, and the semiconductor substrate 110' 'of the rear-bonding solar cell shown in FIG. do.

The semiconductor substrate 110 'includes a larger number of the first electrodes 160 and the second electrodes 170 than the semiconductor substrate 110 and has a larger number of the first electrodes 160 and the second electrodes 170 than the semiconductor substrate 110. [ And a pad 160b and a second electrode pad 170b.

However, the number of the first electrode 160 and the second electrode 170 formed on the semiconductor substrate 110 'may be the same as in the first embodiment.

The semiconductor substrate 110 '' has a larger number of the first electrodes 160 and the second electrodes 170 than the semiconductor substrate 110 ', and the number of the plurality of the first electrodes 160 and the second electrodes 170 is larger than that of the semiconductor substrate 100' And includes a one-electrode pad 160b and a second electrode pad 170b.

However, the number of the first electrode 160 and the second electrode 170 formed on the semiconductor substrate 110 "may be the same as that of the first embodiment described above.

For example, as shown in the figure, the semiconductor substrate 110 'may include first to sixth first electrode pads 160b and first to sixth second electrode pads 170b, The semiconductor substrate 110 "may include first to eighth first electrode pads 160b and first to eighth second electrode pads 170b.

However, the number of the first electrode pads 160b and the number of the second electrode pads 170b provided in the semiconductor substrates 110 'and 110' 'may be variously changed within a range of 100 or less.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.

100A: first solar cell 100B: second solar cell
160: first electrode 170: second electrode
160b: pad for first electrode 170b: pad for second electrode
200: Interconnect connector

Claims (14)

First to fourth pads for first electrodes located on the rear surface of the semiconductor substrate and pads for first to fourth second electrodes located on the rear surface of the semiconductor substrate, a first rear-bonding solar cell and a second rear-bonding solar cell each including a fourth pad for a second electrode; And
The solar cell module according to claim 1, wherein the solar cell module further comprises:
Lt; / RTI >
The interconnector includes a bridge portion located in a space between the first and second rear-bonding solar cells, and a bridge portion between the first rear-electrode solar cell and the second rear- And a first to a fourth tab portion protruding from the bridge portion toward the pad for the second electrode,
Wherein the first to fourth tab portions are bonded to the pads for the first electrode of the first rear-bonding solar cell and the pads for the second electrode of the second rear-bonding solar cell, respectively. The method of claim 1,
And a coating layer including a tin-based solder is disposed on at least one surface of the conductive metal. 3. The method according to claim 1 or 2,
A light transmitting front substrate located on a front surface side of the rear junction solar cell;
A rear substrate positioned on a back surface side of the rear-bonding solar cell; And
And a sealing material disposed between the front substrate and the rear substrate and sealing the plurality of rear-
Further comprising a solar cell module. 4. The method of claim 3,
Wherein the first electrode pads and the second electrode pads are each comprised of 5 to 100, and the interconnector has the same number of tab portions as the number of the first electrode pads and the second electrode pads Including a solar cell module. 5. The method of claim 4,
Wherein the number of pads for the first electrode and the number of pads for the second electrode increase as the size of the semiconductor substrate increases. The method of claim 5,
Wherein the pads for the first electrode are located at a first corner of the rear surface of the semiconductor substrate and the pads for the second electrode are located at a second corner of the rear surface of the semiconductor substrate facing the first edge. The method of claim 6,
A plurality of first electrodes located on a rear surface of the semiconductor substrate and extending perpendicularly to the first and second edges; And
And a plurality of second electrodes alternately arranged with the first electrodes along the longitudinal direction of the first edge and the second edge at the rear surface of the semiconductor substrate and extending in the same direction as the plurality of first electrodes,
Further comprising a solar cell module. 8. The method of claim 7,
A first electrode current collecting electrode extending along the longitudinal direction of the first edge and the second edge and connecting the ends of the plurality of first electrodes at the first edge side; And
A second electrode current collecting electrode extending in the same direction as the first electrode current collecting electrode and connecting ends of the plurality of second electrodes at the second edge side,
Further comprising a solar cell module. 9. The method of claim 8,
Wherein the pads for the first electrode are electrically and physically connected to the first electrode current collecting electrode, and the pads for the second electrode are electrically and physically connected to the second electrode current collecting electrode. 10. The method according to any one of claims 1 to 9,
Wherein a gap between electrode pads of the same polarity is 1 mm to 80 mm. 11. The method of claim 10,
Wherein the interval between the pads of the same polarity is increased or decreased in inverse proportion to the number of pads for the electrode of the same polarity. 11. The method of claim 10,
And the planar areas of the pads for the first electrode and the pads for the second electrode are respectively 1 mm < 2 > to 780 mm < 2 > The method of claim 12,
Wherein a planar area of each of the first electrode pads and a planar area of each of the second electrode pads is increased or decreased in proportion to an interval between pads for the same polarity. The method of claim 13,
Wherein the pads for the first electrode are located at equal distances from the first edge, and the pads for the second electrode are located at equal intervals from the second edge.

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