KR20150082135A - Etching composition for copper and molibdenum containing film - Google Patents

Abstract

The present invention relates to an etching liquid composition capable of preventing a defect of wiring short circuit while keeping an etching speed for a copper film and an etching speed for a molybdenum-contained film high even when the thickness of the copper film is thick at the time of etching a copper and molybdenum-contained film, the etching liquid composition for the copper and molybdenum-contained film including hydrogen peroxide and persulfate as oxidizer, comprising: 0.5 to 2.5 parts by weight of persulfate with respect to 100 parts by weight of hydrogen peroxide.

Description

[0001] ETCHING COMPOSITION FOR COPPER AND MOLIBDENUM CONTAINING FILM [0002]

The present invention relates to an etchant composition of a copper and molybdenum or molybdenum alloy film (hereinafter simply referred to as a copper / molybdenum-containing film), particularly to an etchant composition of a copper and molybdenum containing film used as an electrode of a TFT-LCD display.

A semiconductor device and a fine circuit such as a TFT-LCD are formed by uniformly applying a photoresist to a conductive metal film such as aluminum, an aluminum alloy, a copper and a copper alloy formed on a substrate, an insulating film such as a silicon oxide film or a silicon nitride film, After a light is irradiated through an engraved mask, a photoresist of a desired pattern is formed through development, a pattern is transferred to a metal film or an insulating film under the photoresist by dry or wet etching, and then unnecessary photoresist is removed by a peeling process Lt; RTI ID = 0.0 > lithography < / RTI >

Gate and data metallization of large displays use copper metal with lower resistance and environmental friendliness than conventional aluminum and chromium wiring. However, copper has a low adhesion to glass substrate and silicon insulating film and diffuses into silicon film, and titanium, molybdenum and the like are used as the lower barrier metal.

Korean Patent Laid-Open Publication Nos. 2006-0064881 and 2006-0099089 disclose etchants for copper / molybdenum-containing films based on hydrogen peroxide, which are related to etchant compositions that can be used in simultaneous etching of copper films and molybdenum containing films have. However, as the etchant is repeatedly etched and the metal content of the etchant increases, the etch characteristics such as the taper angle, the sidewall, and the straightness of the etch are lost, and the metal content of the etchant is low, .

In particular, the high quality and large size of the display involves an increase in the thickness of the copper metal used in the wiring. Due to the high quality, the pixel size is reduced, the wiring width is gradually reduced, and the wiring resistance must be reduced due to the enlargement. For this purpose, the thickness of the copper metal used for wiring is inevitably increased.

If the thickness of the copper metal is increased, the etching process time may become longer and the production capacity may be reduced. If the etching speed is increased, there is a high possibility that the wiring short-circuit failure occurs.

Patent Publication No. 2006-0064881 (published on June 14, 2006) Patent Publication No. 2006-0099089 (published on September 19, 2006)

It is an object of the present invention to provide an etchant composition which is capable of maintaining a process time at a high etch rate even when the thickness of the copper metal is increased during etching of the copper / molybdenum-containing film,

The etchant composition of the copper / molybdenum-containing film according to one aspect of the present invention is an etchant composition of a copper and molybdenum-containing film containing hydrogen peroxide and persulfate as oxidizing agents and 0.5 to 10 parts by weight of persulfate per 100 parts by weight of hydrogen peroxide .

According to a preferred embodiment of the present invention, the etchant composition comprises 15 to 30% by weight of hydrogen peroxide, based on the total weight of the composition; 0.05 to 3% by weight persulfate; 0.1 to 3 wt% of an etching inhibitor; 0.1 to 5% by weight of a chelating agent; From 0.01 to 2% by weight of an etching additive comprising at least one compound selected from the group consisting of inorganic acids, organic acids and salts thereof; 0.01 to 2% by weight of a fluorine compound; And water so that the total weight of the composition is 100% by weight.

The persulfate may be selected from the group consisting of sodium persulfate, potassium persulfate, ammonium persulfate, and mixtures thereof.

In the above etching composition, the etching inhibitor may be at least one selected from the group consisting of furane, thiophene, pyrrole, oxazole, imidazole, pyrazole, triazole, Tetrazole, 5-aminotetrazole, methyltetrazole, piperazine, methylpiperazine, hydroxyethylpiperazine, pyrrolidine, and the like. a compound selected from the group consisting of pyrrolidine, alloxan, benzofurane, benzothiophene, indole, benzimidazole, benzpyrazole, tolutriazole, Hydrotoluenesulfonic acid, hydrotolutriazole, hydroxytolutriazole, and mixtures thereof.

The chelating agent may be a compound containing a carboxylic acid group or a phosphonic acid group together with an amino group in a molecule.

The chelating agent may be at least one selected from the group consisting of iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetrinitrilacetic acid, aminotris (methylenephosphonic acid) aminotris (methylenephosphonic acid), (1-hydroxyethane-1,1-diyl) bis (phosphonic acid), ethylenediamine tetra Ethylenediamine tetra (methylene phosphonic acid), diethylenetriamine penta (methylene phosphonic acid), alanine, glutamic acid, aminobutyric acid, glycine glycine, and mixtures thereof.

Wherein the etch additive is selected from the group consisting of inorganic acids including sulfuric acid, nitric acid, phosphoric acid, hydrochloric acid and hydrofluoric acid; Organic acids including acetic acid, formic acid, butanoic acid, citric acid, glycolic acid, oxalic acid, malonic acid, pentanoic acid, propionic acid, tartaric acid, gluconic acid, glycosic acid and succinic acid; Salts of said inorganic or organic acids; And a mixture thereof.

The etching additive may be selected from the group consisting of potassium hydrogen sulfate, sodium hydrogen sulfate, sodium sulfate, potassium sulfate, ammonium sulfate, and mixtures thereof. ≪ / RTI >

The fluorine compound may be a compound dissociated to generate F ^- or HF ₂ ^- .

The fluorine compound may be selected from the group consisting of HF, NaF, KF, AlF ₃ , HBF ₄ , NH ₄ F, NH ₄ HF ₂ , NaHF ₂ , KHF ₂ , NH ₄ BF _4, .

The water may be deionized water having a resistivity value of 18 M? / Cm or more.

The etchant composition may further comprise additives selected from the group consisting of a hydrous stabilizer, an etching stabilizer, a glass etch inhibitor, and mixtures thereof.

Other details of the embodiments of the present invention are included in the following detailed description.

The etchant composition according to the present invention can be used for etching a copper / molybdenum-containing film used as a TFT-LCD display electrode while maintaining the copper film etching rate at 140 Å / s or higher and the molybdenum-containing film etching rate at 15 Å / Can be controlled.

FIG. 1 is a photograph of a cross section of a specimen after etching a copper / molybdenum film using an etching solution composition according to Example 1 with a scanning electron microscope. FIG.
FIG. 2 is a photograph of a cross section of a specimen after etching a copper / molybdenum film using an etching solution composition according to Comparative Example 1 with a scanning electron microscope. FIG.
FIG. 3 is a photograph of a copper / molybdenum wiring short-circuit observed using a scanning electron microscope using the etching composition according to Comparative Example 3. FIG.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

Hereinafter, the etchant composition of a copper / molybdenum-containing film according to an embodiment of the present invention will be described in more detail.

The etchant composition of the present invention can simultaneously etch the copper / molybdenum containing film. Here, the term "copper / molybdenum-containing film" refers to a copper film and a molybdenum film, or a copper film and a molybdenum alloy film. The molybdenum alloy is an alloy of molybdenum and various metals, preferably titanium, tantalum, chromium, neodymium, Indium or tin, and most preferably an alloy with titanium.

The present invention provides an etchant composition for a copper and molybdenum-containing film comprising hydrogen peroxide and persulfate as an oxidizing agent, wherein 0.5 to 10 parts by weight of persulfate is added per 100 parts by weight of the hydrogen peroxide.

If hydrogen peroxide is used in excess of 30 wt% as a sole oxidizing agent for increasing the etching speed of thick copper wiring in the hydrogen peroxide-based etching composition, it is difficult to control the decomposition reaction of the etchant and it is difficult to eliminate defects due to wiring shortage. Accordingly, the present invention reduces the wiring short-circuit failure while improving the etch rate by using two types of oxidizing agents at the same time.

According to a preferred embodiment of the present invention, the etchant composition comprises 15 to 30% by weight of hydrogen peroxide, based on the total weight of the composition; 0.05 to 3% by weight persulfate; 0.1 to 3 wt% of an etching inhibitor; 0.1 to 5% by weight of a chelating agent; From 0.01 to 2% by weight of an etching additive comprising at least one compound selected from the group consisting of inorganic acids, organic acids and salts thereof; 0.01 to 2% by weight of a fluorine compound; And water so that the total weight of the composition is 100% by weight.

Hereinafter, each component of the etchant composition of the copper / molybdenum-containing film according to one embodiment of the present invention will be described in more detail.

a) Hydrogen peroxide

In the etchant composition of the present invention, hydrogen peroxide acts as a main oxidizing agent for copper and a molybdenum or molybdenum alloy.

The hydrogen peroxide may be included in an amount of 15 to 30% by weight based on the total weight of the etchant composition. If hydrogen peroxide is contained in an amount less than 15% by weight, the oxidation ability of the copper and molybdenum alloy is insufficient, and the etching may not be performed. If the hydrogen peroxide is contained in excess of 30% by weight, the etching speed becomes too fast. It is preferable that the etching rate is 20 to 30% by weight because it can realize an appropriate etching speed and can prevent etch residue and etch failure and also reduce CD loss and process control.

b) persulfate

The persulfate that can be used in the etchant composition according to the present invention may be selected from the group consisting of sodium persulfate, potassium persulfate, ammonium persulfate, and mixtures thereof. But is not limited thereto.

If the content of persulfate is less than 0.5 parts by weight based on 100 parts by weight of hydrogen peroxide, a desired etching rate, that is, a copper film etching rate of 140 angstroms or more and a molybdenum containing film etching rate of 15 angstroms or more can not be obtained, The number of defects in which the wiring is short-circuited increases. Therefore, the content of persulfate relative to 100 parts by weight of hydrogen peroxide is 0.5 to 10 parts by weight, preferably 0.5 to 8 parts by weight or 0.5 to 7 parts by weight.

c) Etch inhibitor

In the etchant composition of the present invention, the etch inhibitor reduces the CD loss of the pattern by controlling the etch rate of the copper, molybdenum or molybdenum alloy, increases the process margin, and provides the etch profile with appropriate taper angles.

Specifically, the etching inhibitor is a monocyclic heterocyclic compound containing at least one heteroatom selected from oxygen, sulfur and nitrogen in the molecule, or a heterocyclic compound having a condensed structure of the monocyclic heterocycle and the benzene ring Lt; / RTI > The monocyclic heterocyclic compound may be a heterocyclic aromatic compound or a heterocyclic aliphatic compound having a monocyclic structure having 1 to 10 carbon atoms. Specific examples thereof include furan, thiophene, pyrrole, Such as oxazole, imidazole, pyrazole, triazole, tetrazole, 5-aminotetrazole, or methyltetrazole, and the like. A heterocyclic aromatic compound; But are not limited to, heterocyclic aliphatic compounds such as piperazine, methylpiperazine, hydroxyethylpiperazine, pyrrolidine, and alloxan. no. The heterocyclic compound having a condensation structure of benzene with a monocyclic hetero ring containing at least one hetero atom selected from oxygen, sulfur and nitrogen in the molecule may be benzofurane, benzothiophene, Indole, benzimidazole, benzpyrazole, tolutriazole, hydrotolutriazole, or hydroxytolutriazole, and the like can be mentioned. However, , But are not limited thereto. These compounds may be used singly or in combination of two or more.

The etch inhibitor may be contained in an amount of 0.1 to 3% by weight, preferably 0.1 to 2% by weight based on the total weight of the etchant composition. When the etching inhibitor is contained in an amount of less than 0.1% by weight, the etching rate is difficult to control, the ability to control the taper angle is reduced, and the process margin is low, There is a problem of inefficiency due to a decrease in speed.

d) chelating agent

In the etchant composition of the present invention, the chelating agent forms a chelate with metal ions such as copper ions, molybdenum, or alloy ions thereof generated during the etching process, thereby inactivating the chelating agent, thereby preventing occurrence of side reactions by these metal ions, So that the etching characteristics can be maintained. Particularly, in the case of a copper layer, if a large amount of copper ions remain in the etching solution composition, there is a problem that a passivation film is formed and oxidized and not etched. However, formation of a passivation film of copper ion can be prevented when the chelating agent is added. In addition, the chelating agent can prevent the decomposition reaction of hydrogen peroxide itself and increase the stability of the etching solution. Therefore, if no chelating agent is added to the etching solution composition, the oxidized metal ions are activated during the etching process, the etching characteristics of the etching solution are easily changed, and the decomposition reaction of hydrogen peroxide is promoted, so that heat generation and explosion may occur.

The chelating agent may be a compound containing a carboxylic acid group or a phosphonic acid group together with an amino group in a molecule. Specific examples include iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetrinitrilacetic acid, aminotris (methylenephosphonic acid), aminotris (methylenephosphonic acid) (1-hydroxyethane-1,1-diyl) bis (phosphonic acid), ethylenediaminetetra (methylenephosphonic acid) ( ethylenediamine tetra (methylene phosphonic acid), diethylenetriamine penta (methylene phosphonic acid), alanine, glutamic acid, aminobutyric acid, or glycin ), And the like. One of these may be used alone, or a mixture of two or more thereof may be used.

The chelating agent may be contained in an amount of 0.1 to 5% by weight, preferably 0.1 to 3% by weight based on the total weight of the etchant composition. When the chelating agent is contained in an amount of less than 0.1 wt%, the amount of the metal ion that can be deactivated is too small to have an ability to control the hydrogen peroxide decomposition reaction. When the chelating agent is contained in an amount exceeding 5 wt%, the chelating agent can not be expected to deactivate the metal. There is a problem.

e) etching additive

The etch additive serves as a co-oxidant for copper and molybdenum or molybdenum alloys and improves the taper profile. As the etching additive, an inorganic acid, an organic acid, or a salt thereof may be used, and either one of them or a mixture of two or more thereof may be used.

The organic acid may be acetic acid, formic acid, butanoic acid, citric acid, glycolic acid, oxalic acid, malonic acid, pentanoic acid, propionic acid, tartaric acid, gluconic acid, glycolic acid , Or succinic acid, and the like. The salts also refer to salts of the aforementioned inorganic or organic acids.

In particular, examples of the sulfate may include potassium hydrogen sulfate, sodium hydrogen sulfate, sodium sulfate, potassium sulfate, ammonium sulfate, and the like.

The etching additive may be contained in an amount of 0.1 to 5% by weight, preferably 0.1 to 3% by weight based on the total weight of the etchant composition. When the etching additive is contained in an amount of less than 0.1% by weight, the effect of improving the taper profile by the use of the etching additive is insignificant. If the etching additive is contained in an amount exceeding 5% by weight, the etching property may be deteriorated due to an excessive amount of the etching additive.

f) Fluorine compounds

In the etchant composition of the present invention, the fluorine compound improves the etching rate of the molybdenum-containing film when the copper / molybdenum-containing film is etched at the same time, thereby reducing the tail length and removing the residue of the molybdenum or molybdenum alloy, . Increasing the tail of the molybdenum or molybdenum alloy may reduce the brightness and it should be removed as residues remain on the substrate and underlying film as they reduce electrical shorts, poor wiring and brightness.

As the fluorine compound, a compound capable of being dissociated to generate F ^- or HF ₂ ^- can be used. Specific examples thereof include HF, NaF, KF, AlF ₃ , HBF ₄ , NH ₄ F, NH ₄ HF ₂ , NaHF ₂ , KHF ₂ and NH ₄ BF ₄ . Mixtures may be used.

The fluorine compound may be contained in an amount of 0.01 to 2% by weight, preferably 0.01 to 1% by weight based on the total weight of the etchant composition. If the fluorine compound is contained in an amount less than 0.01% by weight, the residue of the molybdenum or molybdenum alloy can not be effectively removed. If the fluorine compound is contained in an amount exceeding 2% by weight, the lower film such as a glass substrate can be etched.

g) water

In the etchant composition of the present invention, water is not particularly limited, but deionized water may be preferable, and deionized water having a specific resistance value of 18 M OMEGA. / Cm or more, which is a degree at which ions are removed in water, may be more preferable.

The water may be included in an amount such that the total weight of the etchant composition is 100% by weight.

h) Other additives

The etchant composition of the copper / molybdenum containing film of the present invention may further comprise any additive commonly used in the etchant composition to improve etch performance. Examples of the additive include a hydrous stabilizer, an etching stabilizer, and a glass etching inhibitor. These may be used singly or in combination of two or more.

The hydrothermal stabilizer acts to control the hydrogen peroxide decomposition reaction when the metal ion content in the etching solution is high by repeating the etching process. Specifically, phosphate, glycol, amines, or a mixture thereof may be used as the above-mentioned water-soluble stabilizer.

When the hydrothermal stabilizer is included in the etchant composition, it may be contained in an amount of 0.1 to 5% by weight, preferably 0.5 to 3% by weight based on the total weight of the composition. When the hydrous stabilizer is contained in an amount of less than 0.1% by weight, the control effect on the hydrogen peroxide decomposition reaction is insignificant, and if it is contained in an amount exceeding 5% by weight, the etching performance may be lowered.

The etching composition of the present invention having the above composition can improve etching characteristics such as taper angle, sidewall and visual straightness during etching of the copper / molybdenum containing film. Accordingly, the etchant composition is useful as an etchant composition for forming a metal wiring pattern when a copper / molybdenum-containing film is used as a metal wiring material for a gate, a source, or a drain electrode constituting a TFT (Thin Film Transistor) of a liquid crystal display Can be used.

The etching method of the copper / molybdenum-containing film using the above-mentioned etchant composition can be carried out by a conventional method.

Depositing a copper / molybdenum containing film on the substrate; Forming a photoresist film on the copper / molybdenum-containing film and patterning the film; And etching the copper / molybdenum-containing film on which the patterned photoresist film is formed by using the etching liquid composition described above. In this case, the copper / molybdenum- / Molybdenum-containing film is not particularly limited.

In addition, the etching method may include forming a semiconductor structure between the substrate and the copper / molybdenum containing film, that is, between the substrate and the copper film or between the substrate and the molybdenum containing film. The semiconductor structure may be a semiconductor structure for a display device such as a liquid crystal display device, a plasma display panel, or the like. Specifically, the semiconductor structure may include one or more layers selected from a dielectric film, a conductive film, and a silicon film such as amorphous or polycrystalline, and these semiconductor structures may be manufactured by a conventional method.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

< Example  1 to 4 and Comparative Example  1 to 4>

The compositions of Examples 1 to 4 and Comparative Examples 1 to 4 according to the present invention were prepared by mixing the respective components with the ingredient contents shown in Table 1 below.

Example
And
Comparative Example Peroxide
Hydrogen
[weight%] Persulfate
[% By weight] Etch inhibitor
[weight%] Chelating agent
[weight%] Etching additive
[% By weight] Fluoride
[weight%] water
[weight %] Example 1 22 APS 0.40 ATZ 1.0 IDA 1.5 SHS 1.0 ABF 0.1 74.00 Example 2 22 APS 0.80 ATZ 1.0 IDA 1.5 SHS 1.0 ABF 0.1 73.60 Example 3 25 APS 0.80 ATZ 1.0 IDA 1.5 SHS 1.0 ABF 0.1 71.60 Example 4 25 APS 1.50 ATZ 1.0 IDA 1.5 SHS 1.0 ABF 0.1 69.90 Comparative Example 1 25 - - ATZ 1.0 IDA 1.5 SHS 1.0 ABF 0.1 71.40 Comparative Example 2 25 APS 0.1 ATZ 1.0 IDA 1.5 SHS 1.0 ABF 0.1 71.30 Comparative Example 3 25 APS 2.7 ATZ 1.0 IDA 1.5 SHS 1.0 ABF 0.1 68.70 Comparative Example 4 35 - - ATZ 1.0 IDA 1.5 SHS 1.0 ABF 0.1 61.40

In Table 1, APS: ammonium persulfate, ATZ: 5-aminotetrazole, IDA: iminodiacetic acid, SHS: sodium hydrogen sulfate, ABF: Ammonium bifluoride, and the content of each component is in parts by weight.

< Test Example : Etching  Performance evaluation>

In order to evaluate the effect of the etching solution according to the present invention, a copper film and a molybdenum alloy film were sequentially deposited on the glass substrate so as to have a thickness of 4000 Å and 300 Å, respectively, and then a photolithography process was performed to form a pattern.

Etchant compositions of Examples 1 to 4 and Comparative Example 1 Etching was carried out in an equipment (Mini-etcher ME-001) capable of spraying using the etchant composition. After the etching, the etching characteristics of the copper / molybdenum alloy film were observed using a scanning electron microscope (S-4800, manufactured by Hitachi, Ltd.).

Copper / molybdenum alloy film The degree of local overcorrection of the copper / molybdenum film according to the etchant type was observed by scanning electron microscopy after etching the copper / molybdenum alloy film specimen of 5 × 5cm size.

To measure the CD loss, 30% over etch of the measured etch time was performed.

To evaluate the stability, 5,000 ppm of copper powder was dissolved in each etching solution, and the temperature change was measured while maintaining at 32 ° C for 48 hours.

The results are shown in Table 2 below.

Example
And
Comparative Example Etch end point (seconds) Etching speed (Å / s) CD bias
(탆) Wiring short
Count
(ea) Temperature change Copper molybdenum
alloy Copper molybdenum
alloy Example 1 28 15 141 20 0.63 0 none Example 2 27 15 148 20 0.61 0 none Example 3 25 13 150 23 0.65 0 none Example 4 23 11 164 27 0.68 0 none Comparative Example 1 40 21 100 14 0.60 0 none Comparative Example 2 35 22 114 14 0.71 0 none Comparative Example 3 23 13 174 23 0.75 15 Temperature rise Comparative Example 4 26 15 154 20 0.65 12 Temperature rise

As shown in Table 2, the etching solution compositions of Examples 1 to 4 according to the present invention had excellent results in terms of etch rate, seed loss, wiring shortage, and temperature rise as compared with the etching solution compositions of Comparative Examples 1 to 4 Respectively.

In particular, in Comparative Example 1, when the hydrogen peroxide alone oxidizing agent was used, and in Comparative Example 2, the desired etching rate was not obtained when the persulfate oxidizing agent content was too small. Comparative Example 3 shows that when the persulfate oxidizing agent content is excessively large, and Comparative Example 4 shows that when the hydrogen peroxide content is excessively large, the wiring short-circuit occurs and can not be used.

FIG. 1 is a photograph of a piece of a specimen after etching a copper / molybdenum film using a etchant composition according to Example 1 by a scanning electron microscope, and FIG. 2 is a photograph of a copper / A photograph of the cross section of the specimen after etching the molybdenum film with a scanning electron microscope. It can be confirmed that the etchant composition of Comparative Example 1 was not etched sufficiently.

FIG. 3 is a photograph of a wiring short-circuit observed by a scanning electron microscope after etching a copper / molybdenum film using the etching composition according to Comparative Example 3. FIG. As shown in Fig. 3, when the composition of Comparative Example 3 was used, a wiring short circuit was observed while the etching rate was good.

From the above experimental results, it can be confirmed that the etching solution composition according to the present invention enables a stable etching process at a high etching rate in etching the copper / molybdenum-containing film.

While the present invention has been particularly shown and described with reference to specific embodiments thereof, those skilled in the art will appreciate that such specific embodiments are merely preferred embodiments and that the scope of the present invention is not limited thereby. something to do. It is therefore intended that the scope of the invention be defined by the claims appended hereto and their equivalents.

Claims (12)

As an etchant composition for a copper-containing and molybdenum-containing film containing hydrogen peroxide and persulfate as oxidizing agents,
And 0.5 to 10 parts by weight of persulfate relative to 100 parts by weight of the hydrogen peroxide. The method according to claim 1,
The etchant composition comprises
15 to 30% by weight hydrogen peroxide;
0.05 to 3% by weight persulfate;
0.1 to 3 wt% of an etching inhibitor;
0.1 to 5% by weight of a chelating agent;
From 0.01 to 2% by weight of an etching additive comprising at least one compound selected from the group consisting of inorganic acids, organic acids and salts thereof;
0.01 to 2% by weight of a fluorine compound; And
Water to make the total weight of the composition 100%
&Lt; / RTI &gt; wherein the copper and molybdenum-containing film have a thickness of less than about &lt; RTI ID = 0.0 & The method according to claim 1,
Wherein the persulfate is a sulfate selected from the group consisting of sodium persulfate, potassium persulfate, ammonium persulfate, and mixtures thereof. The method according to claim 1,
The etch inhibitor may be selected from the group consisting of furane, thiophene, pyrrole, oxazole, imidazole, pyrazole, triazole, tetrazole, 5-aminotetrazole, methyltetrazole, piperazine, methylpiperazine, hydroxyethylpiperazine, pyrrolidine, alooxanthine, and the like. The present invention relates to a process for the preparation of a compound of the formula (I) or a pharmaceutically acceptable salt thereof, including, but not limited to, alloxan, benzofurane, benzothiophene, indole, benzimidazole, benzpyrazole, tolutriazole, hydrotolutriazole ), Hydroxytolutriazole, and mixtures thereof. &Lt; Desc / Clms Page number 19 &gt; The method according to claim 1,
Wherein the chelating agent is a compound containing a carboxylic acid group or a phosphonic acid group together with an amino group in a molecule. The method according to claim 1,
The chelating agent may be selected from the group consisting of iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetrinitrilacetic acid, aminotris (methylenephosphonic acid) methylenephosphonic acid), (1-hydroxyethane-1,1-diyl) bis (phosphonic acid), ethylenediamine tetra (methylenephosphonic acid) (ethylenediamine tetra (methylene phosphonic acid)), diethylenetriamine penta (methylene phosphonic acid), alanine, glutamic acid, aminobutyric acid, glycin ), And mixtures thereof. &Lt; / RTI &gt; The method according to claim 1,
Wherein the etch additive is selected from the group consisting of inorganic acids including sulfuric acid, nitric acid, phosphoric acid, hydrochloric acid and hydrofluoric acid; Organic acids including acetic acid, formic acid, butanoic acid, citric acid, glycolic acid, oxalic acid, malonic acid, pentanoic acid, propionic acid, tartaric acid, gluconic acid, glycosic acid and succinic acid; Salts thereof; And mixtures thereof. &Lt; / RTI &gt; The method according to claim 1,
The etch additive may be selected from the group consisting of potassium hydrogen sulfate, sodium hydrogen sulfate, sodium sulfate, potassium sulfate, ammonium sulfate, The etchant composition of the copper and molybdenum-containing film, which is the sulfate selected. The method according to claim 1,
Wherein the fluorine compound is a compound dissociated to generate F ^- or HF ₂ ^- . The method according to claim 1,
The fluorine compound containing copper and molybdenum, is selected from _{HF, NaF, KF, AlF 3} , HBF 4, NH 4 F, NH 4 HF 2, NaHF 2, KHF 2, NH 4 BF 4 , and mixtures thereof Lt; / RTI &gt; The method according to claim 1,
Wherein the water is deionized water having a resistivity value of 18 M? / Cm or more. The method according to claim 1,
Wherein the composition further comprises an additive selected from the group consisting of hydrothermal stabilizers, etch stabilizers, glass etch inhibitors, and mixtures thereof.

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