KR20150077146A - Apparatus for processing inductively coupled plasma and method for cleaning thereof - Google Patents

Apparatus for processing inductively coupled plasma and method for cleaning thereof Download PDF

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Publication number
KR20150077146A
KR20150077146A KR1020130166054A KR20130166054A KR20150077146A KR 20150077146 A KR20150077146 A KR 20150077146A KR 1020130166054 A KR1020130166054 A KR 1020130166054A KR 20130166054 A KR20130166054 A KR 20130166054A KR 20150077146 A KR20150077146 A KR 20150077146A
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South Korea
Prior art keywords
lead
variable capacitor
antenna
chamber
capacitor units
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KR1020130166054A
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Korean (ko)
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이창근
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엘아이지인베니아 주식회사
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Publication of KR20150077146A publication Critical patent/KR20150077146A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

The present invention relates to an inductively coupled plasma processing apparatus for plasma-processing a substrate by generating a plasma by an induction field and a cleaning method therefor. An inductively coupled plasma processing apparatus in accordance with the present invention includes a chamber, an antenna disposed outside the dielectric window outside the chamber, a lead disposed over the chamber and receiving the antenna, and a plurality of Wherein the variable capacitor unit is arranged such that an arrangement height of the variable capacitor unit is smaller than or equal to a turning radius of the lead. Thus, by disposing the variable capacitor unit separately from the accommodation space for accommodating the antenna, the radius of rotation of the lead can be reduced by reducing the height of the lead, so that the work space required for the lead cleaning process can be reduced.

Description

TECHNICAL FIELD [0001] The present invention relates to an inductively coupled plasma processing apparatus,

Field of the Invention [0002] The present invention relates to an inductively coupled plasma processing apparatus, and more particularly, to an inductively coupled plasma processing apparatus for generating a plasma by an induction field to perform plasma processing on a substrate.

An inductively coupled plasma processing apparatus is a manufacturing apparatus used in an etching process for etching in a semiconductor and a display manufacturing process or a deposition process for depositing a deposition material. The inductively coupled plasma processing apparatus used in the etching process of the semiconductor and the display manufacturing process is advantageous in that the etching efficiency with respect to the metal is relatively superior to that of the reactive ion etching apparatus or the charge coupled plasma etching apparatus.

Here, the inductively coupled plasma processing apparatus is advantageous in that the etching efficiency with respect to the metal is relatively higher than that with the reactive ion etching apparatus or the capacitively coupled plasma etching apparatus, but there is a difficulty in using the inductively coupled plasma processing apparatus for etching large area substrates. In detail, since the inductively coupled plasma processing apparatus used for etching a large area substrate has non-uniform plasma, a variable capacitor (VVC: Vacuum Variable Capacitor) has been applied to improve it.

Meanwhile, the variable capacitor used in the inductively coupled plasma apparatus is connected to and driven by the driving unit. In particular, the variable capacitor and the driving unit are disposed in the receiving space of the lead accommodating the antenna connected to the RF power source.

When the variable capacitor and the driving unit are accommodated in the receiving space of the lead together with the antenna, the leads have a certain height. In this way, since the lead has a constant height, the radius of rotation increases according to the height of the lead during cleaning of the lead, which may lead to an inefficient problem that the working space for cleaning the lead becomes large.

Korean Patent Publication No. 10-2010-0053253; Inductively coupled plasma antenna

SUMMARY OF THE INVENTION An object of the present invention is to provide an inductively coupled plasma processing apparatus improved in structure to reduce a height of a lead to reduce a turning radius of a lead during cleaning of a lead, and a cleaning method therefor.

According to an aspect of the present invention, there is provided a plasma display apparatus comprising: a chamber according to the present invention; an antenna disposed outside the dielectric window outside the chamber; a lead disposed above the chamber and receiving the antenna; Wherein the arrangement height of the variable capacitor unit is smaller than or equal to the radius of rotation of the lead. The inductively coupled plasma processing apparatus according to claim 1, wherein the variable capacitor unit comprises a plurality of variable capacitor units.

Here, the arrangement length of the plurality of variable capacitor units is preferably equal to or smaller than the rotation radius of the leads.

The width of the lead with respect to the cross-sectional area is a, and the height is b, the radius of rotation r of the lead may include the following equation.

≪ Equation &

Figure pat00001
, (a, b > 0)

When the arrangement length of the plurality of variable capacitor units is c and the arrangement height of the variable capacitor units is d, the rotation radius r1 of the plurality of variable capacitor units with respect to the center of the leads is expressed by the following equation Including,

≪ Equation &

Figure pat00002
, (c, d > 0)

It is preferable that r1 is equal to or smaller than r.

The lead includes a lead frame disposed on the upper portion of the chamber and on which the dielectric window is seated, a first upper lead spaced apart from the lead frame by a predetermined distance and opposed to the lead frame, A side lead which is connected to the upper lead to form a receiving space for receiving the antenna, and a side lead which is disposed in an upper center region of the first upper lead so as to be shorter than an arrangement length of the first upper lead, And a second upper lead supporting a plurality of the variable capacitor units in a separate space for the variable capacitor unit.

And the plurality of variable capacitor units are collectively arranged in the central region of the lead.

Preferably, the antenna may be branched into a plurality of pieces in the direction of the surface of the lead from the center of the lead intersecting with the axis of rotation of the lead.

More preferably, the plurality of antennas branched in the direction of the sheet surface of the lead have the same length.

According to another aspect of the present invention, there is provided a plasma display apparatus comprising: a chamber according to the present invention; an antenna disposed outside the dielectric window outside the chamber; a lead disposed above the chamber and receiving the antenna; A plasma processing apparatus comprising an inductively coupled plasma processing apparatus having a plurality of variable capacitor units, the method comprising the steps of: slidably moving parallel to an installation surface of the chamber with respect to the chamber; Rotating the lead so that the upper and lower portions of the lead are reversed with respect to the center of the lead; and a step of sliding the lead to move the upper surface of the chamber In the cleaning method of the inductively coupled plasma processing apparatus according to the present invention. Even made.

Here, when the width of the cross section of the lead is a and the height is b, the radius of rotation r of the lead may include the following equation.

≪ Equation &

Figure pat00003
, (a, b > 0)

When the arrangement length of the plurality of variable capacitor units is c and the arrangement height of the variable capacitor units is d, the rotation radius r1 of the plurality of variable capacitor units with respect to the center of the leads is expressed by the following equation Including,

≪ Equation &

Figure pat00004
, (c, d > 0)

It is preferable that r1 is equal to or smaller than r.

The details of other embodiments are included in the detailed description and drawings.

The effects of the inductively coupled plasma processing apparatus according to the present invention are as follows.

First, by disposing the variable capacitor unit separately from the accommodation space for accommodating the antenna, the radius of rotation of the lead can be reduced by reducing the height of the lead, so that the work space required for the lead cleaning process can be reduced.

Secondly, the working space necessary for the cleaning process of the leads can be reduced according to the turning radius of the leads, so that the working load due to the rotation of the leads can be reduced, so that usability of the product can be improved.

1 is a schematic cross-sectional view of an inductively coupled plasma processing apparatus according to an embodiment of the present invention,
FIG. 2 is a block diagram of a main part of an inductively coupled plasma processing apparatus according to an embodiment of the present invention,
FIG. 3 is a schematic configuration diagram of an antenna of an inductively coupled plasma processing apparatus according to an embodiment of the present invention,
FIG. 4 is a rear perspective view of the variable capacitor unit shown in FIG. 1,
5 is a cross-sectional view of the lead, antenna and variable capacitor unit regions shown in Fig. 1,
6 is an operational cross-sectional view of the lead, antenna and variable capacitor unit regions shown in FIG. 3,
7 is a flowchart illustrating a cleaning method of an inductively coupled plasma processing apparatus according to an embodiment of the present invention.

Hereinafter, an inductively coupled plasma processing apparatus and a cleaning method thereof according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, it is to be understood that the present invention is not limited to the disclosed embodiments, but may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. It is provided to fully inform the category.

FIG. 1 is a schematic cross-sectional view of an inductively coupled plasma processing apparatus according to an embodiment of the present invention, FIG. 2 is a block diagram of a main part of an inductively coupled plasma processing apparatus according to an embodiment of the present invention, FIG. 4 is a rear perspective view of the variable capacitor unit shown in FIG. 1; FIG.

1 to 4, an inductively coupled plasma processing apparatus 1 according to an embodiment of the present invention basically includes a chamber 10, an antenna 50, a variable capacitor unit 60, and a lead 200, . The inductively coupled plasma processing apparatus 1 according to the embodiment of the present invention includes a stage 20, an electrostatic chuck 30, a dielectric window 40, an RF power source 70, a matching box 80, a current transformer 90 A signal processing unit 100, a control unit 110, and an input / output unit 120.

The chamber 10 includes a chamber body 11, a plasma processing space 13, a gate 17, and an exhaust hole 19. The chamber body 11 forms a plasma processing space 13 for plasma processing of the substrate S. The gate 17 is provided to enter the plasma processing space 13 inside the chamber body 11 and to draw out the substrate S after plasma processing. An exhaust hole 19 is formed through the chamber body 11 so that the inside of the chamber body 11 is vacuum pumped.

The stage 20 is disposed inside the chamber 10, that is, in the plasma processing space 13. Here, a substrate S (a wafer or a transparent substrate of various sizes) is seated on the stage 20. The electrostatic chuck 30 is disposed between the stage 20 and the substrate S to chuck the substrate S.

The dielectric window 40 is disposed on top of the chamber 10. An antenna 50 to which power is supplied from the RF power source 70 is installed on the dielectric window 40.

The antenna 50 is disposed outside the dielectric window 40 outside the chamber 10. The antenna 50 is connected to the divided area of the lead frame 210. That is, the antenna 50 is branched and connected to each divided area. That is, the antenna 50 includes sub-antennas 50 branched and connected to the respective divided areas. Here, each divided area may be divided into various numbers of areas, such as nine or sixteen, and the antenna 50 may correspond to the sub-antennas 50 correspondingly.

3, the antenna 50 includes a first antenna 51, a second antenna 52, a third antenna 53, and a third antenna 53 branched from the center of the lid 200. In this embodiment, The fourth antenna 54 and the fifth antenna 55, the number of the lower antennas 50 may be changed. It is preferable that the first antenna 51, the second antenna 52, the third antenna 53, the fourth antenna 54 and the fifth antenna 55 are provided so as to have the same length in the direction of the surface of the lead 200 desirable. The first antenna 51, the second antenna 52, the third antenna 53, the fourth antenna 54 and the fifth antenna 55 branched from the center of the lead 200 of the present invention are connected to the variable capacitor unit (60) is disposed in the center region of the lead (200), the lead can be branched from the center of the lead (200) in the direction of the surface of the lead (200). The first antenna 51, the second antenna 52, the third antenna 53, the fourth antenna 54 and the fifth antenna 55 are connected to the lead 200 intersecting the rotation axis of the lead 200, In the direction of the sheet surface of the lead 200, respectively.

The variable capacitor unit 60 is disposed on the top of the lead 200 and arranged in plural to operate for impedance control of the antenna 50. [ The variable capacitor unit 60 is operated to maintain the plasma uniformity inside the chamber 10. The variable capacitor unit 60 includes a variable capacitor 61, a driving unit 63, an external encoder 65, an insulating flange 67, and a cooling unit 69. The driving unit 63 uses a step motor as an embodiment of the present invention, but various known motors such as a servo motor may be used according to a design change. Here, the driving unit 63 is controlled using a PID (Proportional-plus-Integrate-plus-Derivative) controller. The PID controller may be integrally provided in the control unit of the driving unit 63, and thus is not shown separately.

This PID controller is an automatic controller that performs proportional-integral-derivative control. The PID control can control the operation of the driving unit 63 adjacent to the target value and promptly respond to the disturbance to actively and quickly control the driving unit 63 to the target value.

The external encoder 65 is provided to sense the rotation angle of the variable capacitor 61. The external encoder 65 includes a total of fifty detection holes 65b formed every 7.2 degrees along the circumferential direction of the circular plate 65a and the circular plate 65a. In addition, the external encoder 65 includes a detection sensor 65c in which the light emitting portion and the light receiving portion are positioned on the upper and lower portions of the circular plate 65a, respectively. A Z-scan sensor (not shown) is disposed together with the variable capacitor 61.

The insulating flange 67 extends through an external encoder 65. The cooling section 69 is disposed at the end of the variable capacitor 61 to dissipate the heat of the variable capacitor 61.

The RF power source 70 is connected to the antenna 50. The matching box 80 is arranged to match the impedance applied from the RF power supply 70 to the impedance required for the process. The matching box 80 is also referred to as an impedance automatic matching device. That is, the matching box 80 is used in pre-semiconductor processing, for example, etching process equipment such as embodiments of the present invention.

A current transducer (90) is connected to each antenna (50). The current transformer 90 senses a current change in the antenna 50. The signal processing unit 100 receiving the current value sensed from each of the current transformers 90 is connected to the network. The signal processing unit 100 receives the current value from each of the current transformers 90 and converts it into an analog or digital signal. The control unit 110 receives the converted signal from the signal processing unit 100. At this time, a signal transmitted from the signal processor 100 to the controller 110 may include an identifier for identifying the corresponding antenna 50. Then, the control unit 110 receiving the current value determines whether there is a change in the current value.

The input / output unit 120 is provided for outputting more than the current value determined by the controller 110 to the outside, and for inputting various operation commands related to the driving of the apparatus, if necessary. The input / output unit 120 may include an alarm function for informing an external alarm to an abnormality, or may be a display device for separately displaying an abnormality. The input / output unit 120 may use various input means such as a touch pad and a keyboard.

FIG. 5 is a cross-sectional view of the lead, antenna, and variable capacitor unit regions shown in FIG. 1, and FIG. 6 is an operational cross-sectional view of the lead, antenna, and variable capacitor unit regions shown in FIG.

The lid 200 is disposed above the chamber 10 and accommodates the antenna 50, as shown in Figs. A plurality of variable capacitor units (60) are disposed in the central region of the lead (200) on the lead (200). A plurality of variable capacitor units 60 are disposed in an upper portion of the lead 200 in a space independent of the antenna 50. In an embodiment of the present invention, the lead 200 includes a lead frame 210, a first upper lead 220, a second upper lead 230, a side lead 250, a receiving space 270, 280). The lead frame 210 is disposed with a dielectric window 40 and seals the top of the chamber 10. The first upper lead 220 is disposed opposite the dielectric window 40 and defines a receiving space 270 in which the antenna 50 is received. The second upper lead 230 is disposed on the upper portion of the first upper lead 220 to support the plurality of variable capacitor units 60. The second upper lead 230 is provided separately from the accommodation space 270 formed in the first upper lead 220. By disposing the plurality of variable capacitor units 60 in the second upper lead 230 separately provided from the accommodation space 270, noise due to the RF current can be prevented. The side lead 250 interconnects the lead frame 210 and the first upper lead 220 to form a receiving space 270 in which the antenna 50 is received.

Particles or the like may be attached to the lower portion of the lead 200 during the plasma processing process for the substrate S in the chamber 10. If particles adhere to the lower portion of the lead 200, the efficiency of the plasma processing process may decrease and the yield of the substrate S may decrease. Therefore, cleaning of the lower portion of the lead 200 is essential.

In order to clean the lower portion of the lead 200, after removing the lead 200 from the chamber 10, the lead 200 must be rotated 180 degrees. Here, the lead 200 has a length corresponding to a certain size of the substrate S to be plasma-processed, but the height may be different. That is, if the height of the lead 200 is changed when the length is constant, the turning radius of the lead 200 can be changed. The smaller the turning radius of the lead 200 is, the smaller the work space can be, so that unnecessary space consumption can be prevented. The plurality of variable capacitor units 60 may be disposed in the second upper lead 230 which is a space separate from the antenna 50 so as to be accommodated in the accommodating space 270 in which the antenna 50 is accommodated Can be reduced and the height from the lead frame 210 to the first upper lead 220 can be reduced in detail.

The arrangement height of the plurality of variable capacitor units 60 disposed in the second upper lead 230 to reduce the turning radius of the lead 200 is preferably equal to or less than the radius of rotation of the lead 200. [ The arrangement length of the plurality of variable capacitor units 60 disposed in the second upper lead 230 is preferably equal to or smaller than the radius of rotation of the lead 200. For example, when the width of the lead 200 with respect to the cross-sectional area of the lead 200 is a and the height is b, the radius of curvature r with respect to the cross-sectional area of the lead 200 satisfies Equation (1) below.

&Quot; (1) "

Figure pat00005
, (a, b > 0)

Assuming that the arrangement length of the plurality of variable capacitor units 60 is c and the arrangement height of the variable capacitor units 60 is d, a plurality of variable capacitor units 60 ) Satisfies the following Equation (2). &Quot; (2) "

&Quot; (2) "

Figure pat00006
, (c, d > 0)

When the r of the turning radius of the lead 200 and the turning radius r1 of the plurality of variable capacitor units 60 satisfy the following Equation (3), the lead 200 rotates without interference according to the turning radius r .

R > r1 (r, r1 > 0)

When the turning radius r of the lead 200 is equal to or larger than the turning radius r1 of the plurality of variable capacitor units 60, the turning radius r of the substantial lead 200 is set to be smaller than the turning radius r of the leads 200 when the lead 200 has a certain length 200). That is, as the height of the lead 200 becomes smaller, the turning radius r becomes smaller, and accordingly, the work space for cleaning the lead 200 can be reduced.

7 is a flowchart illustrating a cleaning method of an inductively coupled plasma processing apparatus according to an embodiment of the present invention.

As shown in FIG. 7, the cleaning method of the inductively coupled plasma processing apparatus 1 according to the embodiment of the present invention with such a configuration is as follows.

First, after the plasma processing process for the substrate S inside the chamber 10 is completed, the chamber 10 and the lid 200 are separated from each other (S100). Here, it is preferable that the lead 200 slides relative to the upper portion of the chamber 10 and moves to the work space for cleaning. After separating the chamber 10 and the lid 200, the lid 200 rotates 180 degrees according to the radius of rotation r of the lid 200 (S300). The lead 200 in the embodiment of the present invention includes a first upper lead 220 and a second upper lead 230 and a plurality of variable capacitor units 60 are disposed in the housing 200 in which the antenna 50 is accommodated And is supported by a second upper lead 230 provided independently of the first upper lead 220 forming the space 270. The lead frame 210 which forms the receiving space 270 as the plurality of variable capacitor units 60 are supported by the second upper lead 230, that is, the lead frame 210 which substantially determines the turning radius r of the lead 200 Since the height of the first upper lead 220 can be reduced, the turning radius r of the lead 200 can be reduced.

When the lower surface of the lead 200 is lifted up by the rotation of the lead 200, the lower surface of the lead 200 is cleaned (S500). When the cleaning of the lead 200 is completed, the lead 200 is rotated again (S700). Then, the lead 200 is moved and coupled to the upper portion of the chamber 10 so that the plasma processing process for the substrate S can proceed (S900).

By disposing the variable capacitor unit separately from the accommodation space for accommodating the antenna, the radius of rotation of the lead can be reduced by reducing the height of the lead, so that the work space required for the lead cleaning process can be reduced.

In addition, the working space necessary for the cleaning process of the leads can be reduced according to the radius of rotation of the leads, so that the working load due to the rotation of the leads can be reduced, thereby improving usability of the product.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, . Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

10: chamber 50: antenna
51: first antenna 53: second antenna
55: third antenna 57: fourth antenna
59: fifth antenna 60: variable capacitor unit
200: lead 210: lead frame
220: first upper lead 230: second upper lead

Claims (11)

A chamber;
An antenna disposed outside the dielectric window outside the chamber;
A lead disposed above the chamber, the lead receiving the antenna;
And a plurality of variable capacitor units disposed on top of the leads and operating for impedance control of the antenna,
Wherein an arrangement height of the variable capacitor unit is smaller than or equal to a turning radius of the lead.
The method according to claim 1,
Wherein an arrangement length of the plurality of variable capacitor units is equal to or smaller than a turning radius of the leads.
3. The method according to claim 1 or 2,
And a radius of curvature r of the lead includes the following equation, where r is a width of the lead and r is a height of the lead.
≪ Equation &
Figure pat00007
, (a, b > 0)
The method of claim 3,
Wherein a plurality of the variable capacitor units have an arrangement length of c and an arrangement height of the variable capacitor unit is d, the plurality of variable capacitor units r1 of the plurality of variable capacitor units with respect to the center of the leads include the following equation ,
≪ Equation &
Figure pat00008
, (c, d > 0)
And r1 is equal to or smaller than r.
3. The method according to claim 1 or 2,
The lead includes:
A lead frame disposed at an upper portion of the chamber, the lead frame having the dielectric window;
A first upper lead spaced apart from the lead frame and disposed opposite to the lead frame;
A side lead connecting the lead frame and the first upper lead to form a receiving space for receiving the antenna;
And a second upper lead which is disposed in an upper central region of the first upper lead so as to be shorter than an arrangement length of the first upper lead and supports the plurality of variable capacitor units in a separate space with respect to the accommodation space, Wherein the inductively coupled plasma processing apparatus comprises:
6. The method of claim 5,
Wherein the plurality of variable capacitor units are collectively arranged in a central region of the leads.
3. The method according to claim 1 or 2,
Wherein the antenna is branched into a plurality of pieces from the center of the lead intersecting with the rotational axis of the lead in the direction of the plate surface of the lead.
8. The method of claim 7,
And the plurality of antennas branched in the plate surface direction of the lead have the same length.
An inductively coupled plasma processing apparatus comprising: a chamber; an antenna disposed outside a dielectric window outside the chamber; a lead disposed over the chamber and receiving the antenna; and a plurality of variable capacitor units disposed on the lead, Including,
Sliding in parallel with the installation surface of the chamber with respect to the chamber;
Rotating the lead such that the upper and lower portions of the lead are inverted with respect to the center of the lead;
Cleaning the lower surface of the lead;
Re-conducting the leads such that the upper and lower portions of the leads are inverted with respect to the center of the leads;
And sliding the lead to place it on the upper surface of the chamber.
10. The method of claim 9,
Wherein a radius of curvature r of the lead is expressed by the following equation when a width and a height of a cross section of the lead are a and b, respectively.
≪ Equation & , (a, b > 0)
11. The method of claim 10,
Wherein a plurality of the variable capacitor units have an arrangement length of c and an arrangement height of the variable capacitor unit is d, the plurality of variable capacitor units r1 of the plurality of variable capacitor units with respect to the center of the leads include the following equation ,
≪ Equation &
Figure pat00010
, (c, d > 0)
Wherein r1 is equal to or smaller than r.
KR1020130166054A 2013-12-27 2013-12-27 Apparatus for processing inductively coupled plasma and method for cleaning thereof KR20150077146A (en)

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