KR20150077115A - Apparatus for processing flexible substrate and method of processing flexible substrate using the same - Google Patents

Abstract

The present invention provides an apparatus for processing a flexible substrate and a method for processing a flexible substrate using the same to allow the flexible substrate to be processed in a roll-to-roll way in an independent space by separating a process area for transmission of the flexible substrate and processing of the flexible substrate. The apparatus for processing a flexible substrate comprises: a chamber having a plurality of process areas formed thereon; a substrate supply roll disposed inside the chamber to supply the flexible substrate to the plurality of process areas; a substrate recovery roll disposed inside the chamber to draw out the flexible substrate from the substrate supply roll and recover the flexible substrate; a rotational stage disposed inside the chamber, and supporting a curved surface of the flexible substrate between the substrate supply roll and the substrate recovery roll to rotate and transmit the flexible substrate; inductively coupled plasma (ICP) antennas disposed on the plurality of process areas, respectively, wherein plasma is generated in the plurality of process areas by RF power applied to the ICP antennas. Therefore, according to the present invention, the apparatus for processing a flexible substrate and the method for processing a flexible substrate using the same are capable of improving productivity using the roll-to-roll way.

Description

TECHNICAL FIELD [0001] The present invention relates to a flexible substrate processing apparatus and a flexible substrate processing method using the flexible substrate processing apparatus and a flexible substrate processing method using the flexible substrate processing apparatus. ≪ Desc / Clms Page number 1 >

The present invention relates to a flexible substrate processing apparatus and a flexible substrate processing method using the same, and more particularly, to a flexible substrate processing apparatus for processing a flexible substrate and a flexible substrate processing method using the same.

In general, a flexible display is a display made of a flexible substrate such as plastic. Such a flexible display is regarded as a next generation technology of the present display market because it can be folded, bent or rolled into a rolled shape with excellent display characteristics.

In addition, since the flexible display can be continuously manufactured using a roll-to-roll system in comparison with a display manufactured using a conventional glass substrate in a cluster system, the flexible display can reduce the manufacturing cost and improve the productivity due to mass production The market is expected to attract.

Such a roll-to-roll manufacturing method of a conventional flexible display has already been disclosed in Korean Patent Laid-Open Publication No. 2009-0068670, a roll rheol substrate transfer apparatus, a wet etching apparatus and a circuit board manufacturing apparatus (2009.06.29) Lt; / RTI >

The disclosed invention includes a plurality of rollers to enable continuous fabrication of the substrate. However, the present invention has a problem that the roller disposed in the area where the etching process is performed may be directly exposed to the etching gas or the plasma, and the roller may be damaged during the etching process for the substrate.

Korean Patent Publication No. 2009-0068670; Roll rupture substrate transfer device, wet etching device including the same and circuit board manufacturing device (2009.06.29)

An object of the present invention is to provide a flexible substrate processing apparatus in which a roller for transferring a substrate is not directly exposed to a plasma, and a flexible substrate processing method using the same.

A flexible substrate processing apparatus according to the present invention includes a chamber in which a plurality of process regions are formed and a substrate supply roll disposed inside the chamber for supplying a flexible substrate to the plurality of process regions, A substrate recovery roll for withdrawing the flexible substrate and for withdrawing the flexible substrate, and a rotator for rotating and transferring the flexible substrate by supporting the flexible substrate on a curved surface between the substrate supply roll and the substrate recovery roll, And an ICP (Inductively Coupled Plasma) antenna disposed in the plurality of process regions, respectively, and plasma is generated by the RF power applied to the ICP antenna in the plurality of process regions.

Wherein the substrate supply roll and the substrate recovery roll are provided on one side of the rotation stage, the flexible substrate is supplied in a horizontal direction from the substrate supply roll toward the rotation stage, and the processed flexible substrate is transferred from the rotation stage to the substrate And can be recovered horizontally toward the recovery roll.

Wherein the substrate supply roll and the substrate recovery roll are provided at one side of the rotation stage, the flexible substrate is supplied from the substrate supply roll in the vertical direction toward the rotation stage, and the processed flexible substrate is transferred from the rotation stage to the substrate And can be recovered vertically toward the recovery roll.

The rotary stage is provided with a drum, and the flexible substrate can be supported on the curved surface of the drum.

The plurality of ICP antennas may be disposed parallel to the tangent line of the rotating stage and may be individually controlled.

The flexible substrate processing apparatus may further include a plasma sensing unit disposed between the plurality of ICP antennas and the rotation stage and sensing a generation time point and a disappearing time point of the plasma.

A slip portion for reducing the frictional force generated between the flexible substrate and the rotary stage is formed on the rotary stage, the slip portion includes a first groove formed in an oblique direction with respect to a moving direction of the flexible substrate, And a second groove formed in an oblique direction with respect to the traveling direction and intersecting with the first groove.

An inert gas may be introduced into the first and second grooves.

The chamber may include a first chamber in which the substrate supply roll and the substrate recovery roll are disposed inside and a second chamber in which the rotation stage is disposed inside and the ICP antenna is supported.

The second chamber may be maintained at a lower pressure than the first chamber.

Wherein the chamber includes a buffer chamber disposed between the first chamber and the second chamber and maintained at a higher pressure than the second chamber and the buffer chamber discharges particles that can be introduced from the second chamber to the outside can do.

The process gas may be an etching gas or a deposition gas.

The flexible substrate processing method according to the present invention comprises the steps of: (a) releasing a flexible substrate from a substrate supply roll disposed in a chamber; and (b) supporting the flexible substrate on a curved surface of a rotating stage disposed inside the chamber. (C) generating plasma on the flexible substrate based on a process gas, the ICP antenna being disposed in each of a plurality of process areas formed in the chamber, the process gas being provided to the plurality of process areas, respectively And (d) recovering the flexible substrate into a substrate recovery roll disposed within the chamber.

In the step (c), the plurality of ICP antennas disposed in parallel to the tangent of the rotation stage are individually controlled, and the plasma can be sequentially generated with respect to the flexible substrate.

In the step (c), the generation timing and the disappearance timing of the plasma may be sensed in each of the plurality of process areas.

Wherein the chamber comprises a first chamber in which the substrate supply roll and the substrate recovery roll are disposed inside and a second chamber in which the rotation stage is disposed inside and the ICP antenna is supported, The second chamber may be maintained at a lower pressure than the first chamber.

Wherein the chamber includes a buffer chamber disposed between the first chamber and the second chamber and maintained at a higher pressure than the second chamber, the buffer chamber including particles that can flow from the second chamber into the buffer chamber, It can be discharged to the outside.

In the step (c), an etching process or a deposition process may be performed on the flexible substrate.

In the step (c), the pre-processing, the main processing, and the post-processing may be sequentially performed on the flexible substrate.

The flexible substrate processing apparatus according to the present invention and the flexible substrate processing method using the same can not only improve the productivity by using the roll-to-roll method but also prevent the roller for transferring the substrate from being directly exposed to the plasma, So that the maintenance can be facilitated.

The technical effects of the present invention are not limited to the effects mentioned above, and other technical effects not mentioned can be clearly understood by those skilled in the art from the following description.

1 is a schematic view showing a flexible substrate processing apparatus according to the present embodiment,
2 is a cross-sectional view schematically showing a buffer chamber according to the present embodiment,
3 is a cross-sectional perspective view showing a rotation stage of the flexible substrate processing apparatus according to the present embodiment,
4 is a schematic view showing a flexible substrate processing apparatus according to another embodiment,
5 is a schematic view showing a flexible substrate processing apparatus according to another embodiment,
6 is a flowchart showing a flexible substrate processing method according to this embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present embodiments are not limited to the embodiments described below, but may be implemented in various forms. In addition, the shape of elements and the like in the drawings may be exaggerated for clarity, and elements denoted by the same reference numerals in the drawings denote the same elements.

In addition, the flexible substrate to be processed by the flexible substrate processing apparatus according to this embodiment, which will be described below, can withstand a high process temperature and can have a low coefficient of thermal expansion (CTE), excellent chemical resistance, As the material, FRP (Fiber Reinforced Plastic), PET, PEN, PC, PES, AryLite, COC and the like can be used. The flexible substrate may be provided with a predetermined pattern for forming a thin film transistor, and the flexible substrate may be wound and rolled. At this time, a barrier film for protecting the pattern formed on the surface of the substrate may be adhered to the roll-shaped substrate.

The present embodiment describes a flexible substrate processing apparatus that generates inductively coupled plasma (ICP). However, the flexible substrate processing apparatus according to the present invention performs processing on a flexible substrate by generating plasma And it can be applied to other flexible substrate processing apparatuses in advance.

Fig. 1 is a configuration diagram briefly showing a flexible substrate processing apparatus according to the present embodiment.

1, a flexible substrate processing apparatus 100 according to the present embodiment includes a substrate supply unit 110, a substrate collection unit 130, a first chamber 150, a second And includes a chamber 170 and a buffer chamber 190.

First, the substrate supply unit 110 supplies the flexible substrate S. The substrate supply unit 110 may include a substrate supply roll 111 and a barrier discharge roll 113.

 The flexible substrate S provided in the form of a roll may be supported on the substrate feed roll 111. And the barrier discharge rolls 113 are disposed on one side of the substrate supply roll 111. [ The barrier discharge roll 113 is wound around the barrier film B1 that is peeled from the flexible substrate S. [

And a lip roll LR may be disposed between the substrate feed roll 111 and the barrier discharge roll 113. [ The lip roll LR is formed so that bubbles are prevented from being generated between the flexible substrate S and the barrier film B 1 when the barrier film B 1 peeled off from the flexible substrate S is adhered to the flexible substrate S again do.

More specifically, in order to confirm in advance the tension of the flexible substrate S in the process of setting the initial equipment, the flexible substrate S is unwound from the substrate supply roll 111, and the barrier film (B1) . The flexible substrate S on which the barrier film B1 has been peeled off can be recovered in the substrate supply roll 111 by again bonding the barrier film B1 for the actual process. At this time, the lip roll LR can prevent bubbles from being generated between the flexible substrate S and the barrier film B1 which are to be adhered again.

 On the other hand, the substrate recovery unit 130 winds the flexible substrate S wound on the substrate supply roll 111. The substrate recovery unit 130 may include a substrate recovery roll 131 and a barrier supply roll 133.

A drive motor (not shown) may be installed on the substrate recovery roll 131 to provide power to the flexible substrate S to be wound on the substrate recovery roll 131. The flexible substrate S supported on the substrate supply roll 111 in the form of a roll can be withdrawn from the substrate supply roll 111 and recovered to the substrate recovery roll 131 in accordance with the rotation of the substrate recovery roll 131. [ The barrier supply roll 133 is disposed on one side of the substrate recovery roll 131. The barrier supply roll 133 supplies the barrier film (B2) for protecting the surface of the flexible substrate (S). Thus, the surface of the flexible substrate S can be protected by attaching the barrier film B2 to the surface of the flexible substrate S recovered in the substrate recovery roll 131. [

And a lip roll LR may be disposed between the substrate recovery roll 131 and the barrier supply roll 133. [ The lip roll LR prevents bubbles from being generated between the flexible substrate S and the barrier film B2 during the process of adhering the flexible substrate S and the barrier film B2.

The substrate supply unit 110 and the substrate recovery unit 130 are disposed inside the first chamber 150. Here, the first chamber 150 provides a clean environment by shielding the space to which the flexible substrate S is transferred from the outside. A first exhaust pump (not shown) for exhausting the interior of the chamber is connected to the first chamber 150 so that the interior of the first chamber 150 can be maintained at a predetermined pressure (for example, 10 ^-2 Torr) have.

In the second chamber 170, a series of processing steps for the flexible substrate S are performed. Since the second chamber 170 has a structure that communicates with the first chamber 150 by the buffer chamber 190, the gas or particles supplied to the inside of the second chamber 170 can flow into the first chamber 150 Can be introduced.

However, in the present embodiment, the internal pressure is maintained at a lower pressure than the internal pressure of the first chamber 150 by the second exhaust pump (not shown) connected to the second chamber 170 at one side. Accordingly, the gas or particles in the second chamber 170 may not flow out into the first chamber 150. The detailed configuration of the second chamber 170 will be described in detail with reference to the accompanying drawings.

The buffer chamber 190 may be disposed between the first chamber 150 and the second chamber 170. For example, the buffer chamber 190 includes a first buffer chamber 191 disposed between the outlet 150a of the first chamber 150 and an inlet 170a of the second chamber 170, a second chamber 170 And a second buffer chamber 193 disposed between the outlet 170c of the first chamber 150 and the inlet 150c of the first chamber 150. Here, the first and second buffer chambers 191 and 193 may have the same configuration. Hereinafter, a single buffer chamber 190 will be described.

2 is a cross-sectional view schematically showing a buffer chamber according to the present embodiment.

As shown in FIG. 2, the buffer chamber 190 may be disposed between the first chamber 150 and the gate valve G of the second chamber 170. Here, a third exhaust pump (not shown) for exhausting the interior of the chamber is connected to the buffer chamber 190. At this time, the internal pressure of the buffer chamber 190 is maintained at a higher pressure than the internal pressure of the second chamber 170, and may be maintained at a lower pressure than the internal pressure of the first chamber 150. Thus, the buffer chamber 190 can be prevented from introducing gas or particles from the second chamber 170.

The buffer chamber 190 may be supplied with an inert gas capable of blocking gas or particles introduced from the second chamber 170. Here, the inert gas may be a nitrogen (N2) gas as shown in FIG. 2, and at least one diffusion plate 190a may be disposed inside the buffer chamber 190. FIG.

The diffusion plate 190a diffuses the inert gas introduced into the buffer chamber 190 inside the buffer chamber 190. For this purpose, a plurality of diffusion holes 190b may be formed in the diffusion plate 190a. The diffusion plates 190a may be disposed in pairs so as to face each other in the buffer chamber 190. The space between the pair of diffusion plates 190a may be a transport path through which the flexible substrate S is transported Can be formed. An idle roller 181 for guiding and supporting the flexible substrate S may be disposed in the buffer chamber 190.

Accordingly, the buffer chamber 190 discharges the inert gas and the gas or particles introduced from the second chamber 170 together with the third exhaust pump to the outside of the chamber even if the gas or particles are introduced from the second chamber 170 . Accordingly, the buffer chamber 190 prevents gas or particles from entering the first chamber 150, thereby preventing the interior of the first chamber 150 from being contaminated.

However, in the present embodiment, the internal pressure of the buffer chamber 190 is maintained at a higher pressure than the internal pressure of the second chamber 170 and is maintained at a lower pressure than the internal pressure of the first chamber 150, The chamber 190 may be connected to a first exhaust pump that is evacuating the interior of the first chamber 150 such that the internal pressure maintains the same pressure as the internal pressure of the first chamber 150.

The second chamber 170 is provided with a rotation stage 171, a plasma generating unit 173, a barrier rib 175 and a plasma sensing unit 177.

First, the gates G1 and G2 are disposed at the entrance 170a and the exit 170c side of the second chamber 170. The gates G1 and G2 can open and close the second chamber 170 to form an entry / exit path of the flexible substrate S. [

3 is a cross-sectional perspective view showing a rotation stage of the flexible substrate processing apparatus according to the present embodiment.

As shown in FIG. 3, the rotating stage 171 is disposed inside the second chamber 170. The rotation stage 171 supports the flexible substrate S and can rotate and transfer the flexible substrate S from the substrate supply unit 110 (see FIG. 1) to the substrate recovery unit 130 (see FIG. 1). Here, the rotary stage 171 is provided as a drum so that the flexible substrate S is continuously transferred to the plasma generating portion 173.

The rotation stage 171 rotates from the inlet 170a side to the outlet 170c side of the second chamber 170 while the flexible substrate S carried into the second chamber 170 is supported on the curved surface . Here, the rotation stage 171 may be rotatably provided. To this end, the rotation axis of the rotation stage 171 is arranged to penetrate the side wall of the second chamber 170. At this time, a sealing member 170e is disposed between the rotation shaft and the side wall of the second chamber 170. [ The sealing member 170e maintains the pressure inside the second chamber 170 and allows the rotation stage 171 to rotate. Here, the sealing member 170e may be provided with a magnetic fluid seal.

Further, the rotating stage 171 can be heated or cooled to approximately 25 to 50 占 폚 according to the process. Thus, the rotating stage 171 may be provided with a heating unit 171a and a cooling unit 171c.

First, the heating portion 171a is disposed in the inner space of the rotation stage 171. [ Here, the heating unit 171a heats the inner space of the rotation stage 171, so that the flexible substrate S can be heated by radiant heat. At this time, the heating unit 171a may be provided with a heating cable or a heating coil.

The cooling unit 171c may be provided on the outer wall of the rotary stage 171 forming the curved surface of the rotary stage 171 so that the flexible substrate S may be cooled. Here, the cooling section 171c may be formed as a cooling channel on the outer wall of the rotating stage 171. [ The cooling section 171c may include a coolant inlet / outlet section 171ca. The refrigerant inlet / outlet portion 171ca is disposed on the rotary shaft of the rotary stage 171 so that cooling fluid can be supplied to and discharged from the cooling portion 171c. Here, the refrigerant inlet / outlet portion 171ca may be provided with a slip ring.

A slip portion 171g for reducing a frictional force between the curved surface of the rotary stage 171 and the flexible substrate S may be formed on the curved surface of the rotary stage 171. [

That is, the slip portion 171g includes a first groove 171ga formed in an oblique direction with respect to the traveling direction of the flexible substrate S and a second groove 171g formed in the oblique direction with respect to the traveling direction of the flexible substrate S, And a second groove 171gc formed to intersect with the first groove 171g. The first and second grooves 171ga and 171gc may be formed in plural numbers. The slip portion 171g prevents the entire surface area of the flexible substrate S from being in surface contact with the rotating stage 171 to alleviate the frictional force between the curved surface of the rotating stage 171 and the flexible substrate S .

In addition, a gas inlet hole (not shown) may be provided in a region where the first and second grooves 171ga and 171gc intersect to allow the inert gas to flow into the first and second grooves 171ga and 171gc. Thus, the flexible substrate S can be slipped and transported from the curved surface of the rotating stage 171. [

Referring to FIG. 1 again, as described above, the present embodiment describes a processing apparatus for generating an inductively coupled plasma. The plasma generating unit 173 may be an ICP antenna, and the second chamber 170 ) May be introduced into the etching gas or deposition gas for the process. Accordingly, the plasma generating unit 173 can perform an etching process or a deposition process for the flexible substrate S based on a process gas such as an etching gas or a deposition gas. Therefore, a high frequency power for generating inductively coupled plasma is applied to the plasma generating unit 173. Here, the configuration of the plasma generating unit 173 can be understood by a well-known technique, and thus a detailed description thereof will be omitted.

The plasma generating part 173 may be disposed such that one surface of the plasma generating part 173 facing the rotating stage 171 is parallel to the tangent of the rotating stage 171. For example, the plasma generating portion 173 is disposed apart from the curved surface of the rotating stage 171. Here, the plasma generating part 173 is installed on the outer wall of the second chamber 170 so as to face the rotating stage 171. The side wall of the second chamber 170 disposed between the plasma generating part 173 and the rotating stage 171 may be made of a dielectric material such as quartz. In this case, the plasma generating part 173 may be an ICP antenna. have.

Further, the plasma generating portion 173 may be provided in plural so that a plurality of processes can be performed on the flexible substrate S being transported. The plurality of plasma generators 173 may be individually controlled. Accordingly, maintenance processing and substrate processing can be facilitated by the plurality of plasma generators 173 in the processing apparatus 100. For example, when the operation of one of the plurality of plasma generating units is stopped, a continuous process for the flexible substrate S may be possible by using another plasma generating unit.

The plurality of plasma generators 173 generate inductively coupled plasma for one region of the flexible substrate S. Thus, in the processing apparatus 100, the flexible substrate S is transferred and can be continuously processed. The plurality of plasma generators 173 can divide the flexible substrate S by regions and generate and control a separate plasma in each region. Accordingly, the plurality of plasma generators 173 can perform the continuous process for the flexible substrate S without stopping the transfer of the flexible substrate S, and can reduce the process time for the flexible substrate S There is an advantage.

Meanwhile, the barrier ribs 175 may define a generation region of the inductively coupled plasma generated by the plurality of plasma generating portions 173. In other words, the barrier ribs 175 allow a plurality of process regions to be formed in the second chamber 170. Here, the partition 175 may extend from the side wall of the second chamber 170 to the curved surface of the rotating stage 171 between the plurality of plasma generating portions 173. At this time, the partition 175 is disposed so that one end facing the rotation stage 171 is separated from the curved surface of the rotation stage 171 by a space through which the flexible substrate S can pass.

The plasma sensing unit 177 may be disposed in a region partitioned by the barrier ribs 175, respectively. The plasma sensing unit 177 can confirm the plasma state. Here, the plasma sensing unit 177 senses the generation time point and the disappearance time point of the inductively coupled plasma in the area where each is disposed. Accordingly, the plasma sensing unit 177 can detect the progress of the etching or deposition process on the flexible substrate S during transport. Accordingly, in the processing apparatus 100, the divisional transferring time of the flexible substrate S passing through the partitioned region and the entire transferring time of the flexible substrate S passing through the entire divided region can be controlled, There is an advantage that a more precise process can be performed.

The idler roller 181, the load cell 183, and the tension adjuster 183 for smoothly transferring the flexible substrate S from the substrate supply unit 110 to the substrate recovery unit 130 are provided in the first chamber 150, A roller 185 may be disposed.

At first, the idle roller 181 is provided between the substrate supply unit 110 and the substrate recovery unit 130 to form a transport path of the flexible substrate S. The load cell 183 is mounted on the rotary shaft of the idler roller 181 and can sense the pressure transmitted to the rotary shaft of the idler roller 181 and the tension of the flexible substrate S.

In addition, the tension adjusting roller 185 may be provided at least from the substrate supplying unit 110 to the substrate collecting unit 130. For example, the tension adjusting roller 185 may be provided on the inlet side of the first chamber 150 and on the outlet side of the first chamber 150, respectively. The tension regulating roller 185 controls the tension of the flexible substrate S to be supplied and recovered in parallel to the flexible substrate S based on the tension of the flexible substrate S sensed by the load cell 183. [ can do. Here, the tension adjusting roller 185 may be configured such that the surface of the flexible substrate S on which the flexible substrate S is in contact is subjected to a silicone treatment so that the tension of the flexible substrate S can be adjusted according to the rotation speed control.

1, two idler rollers 181 are arranged between the substrate feed roll 111 and the buffer chamber 190, and one idler roller 181 is disposed between the buffer chamber 190 and the substrate recovery unit 130, The number of the idle rollers 181 and the number of the tension adjusting rollers 185 is not limited to the number of the rollers of the present invention And should not be construed as limiting the scope of the rights.

On the other hand, as described above, since the predetermined pattern is already formed on the surface of the flexible substrate S and the flexible substrate S is provided in the form of a roll in which the barrier film B1 is adhered, It may remain.

A drying unit 187 for drying the flexible substrate S may be disposed between the substrate feed roll 111 and the first buffer chamber 191 to remove the moisture remaining on the flexible substrate S. [ A heating unit 189 for stabilizing the temperature of the flexible substrate S may be installed between the drying unit 187 and the first buffer chamber 191 by heating the flexible substrate S through the drying unit 187 have.

1, the drying unit 187 and the heating unit 189 are shown as being provided in a single unit between the substrate supply roll 111 and the first buffer chamber 191. However, The unit 189 is placed between the substrate supply roll 111 and the first buffer chamber 191 and between the second buffer chamber 193 and the substrate recovery roll 131 in the temperature and surface state of the flexible substrate S You can install as many as you like.

An end position controller 120 may be installed on the side from which the flexible substrate S is unwound from the substrate supply roll 111 and the side from which the flexible substrate S is wound toward the substrate recovery roll 131. The end position controller 120 causes the flexible substrate S to be released from the substrate supply roll 111 while the tension of the flexible substrate S is maintained and the tension of the flexible substrate S controlled by the tension adjusting roller 185 And can be wound on the substrate recovery roll 131 in a state of being held.

1, the processing apparatus 100 includes the first chamber 150, the second chamber 170, and the buffer chamber 190. However, in the present invention, The processing apparatus according to the present invention can be composed of a single chamber C as shown in Fig.

In addition, in this embodiment, the first chamber 150, the second chamber 170, and the buffer chamber 190 are connected in the horizontal direction so that the flexible substrate S is supplied in the horizontal direction toward the second chamber 170 , The processed flexible substrate S is recovered in the horizontal direction from the second chamber 170 toward the first chamber 150. However, the processing apparatus is not limited to the first chamber 150, The second chamber 170 and the buffer chamber 190 are connected in the longitudinal direction so that the flexible substrate S is vertically fed toward the second chamber 170 and the processed flexible substrate S is transferred to the second chamber 170. [ And may be recovered in the vertical direction from the first chamber 150 to the first chamber 150.

Hereinafter, a flexible substrate processing method according to the present embodiment will be described with reference to the accompanying drawings.

6 is a flowchart showing a flexible substrate processing method according to this embodiment.

As shown in Fig. 6, the flexible substrate S is provided in the form of a roll and is supported on the substrate supply roll 111. Fig. Thereafter, the process starts as the substrate recovery roll 131 is rotated. Of course, before the process is started, the first chamber 150 is exhausted by the first exhaust pump, the second chamber 170 is exhausted by the second exhaust pump, and the buffer chamber 190 Is exhausted. Accordingly, a process environment in which a low pressure is maintained in the second chamber 170 compared to the first chamber 150 and the buffer chamber 190 may be established (step S11).

Thereafter, the barrier film adhered to the flexible substrate S, which is fed from the substrate feed roll 111, is wound around the barrier discharge roll 113 and discharged therefrom. Then, the flexible substrate S on which the barrier film (B1) is peeled passes through the drying unit 187 and the moisture is removed. The flexible substrate S having passed through the drying unit 187 is heated by the heating unit 171c and the temperature can be stabilized. The flexible substrate S is transferred to the second chamber 170 through the first buffer chamber 191 (step S13). At this time, an inert gas may be introduced into the slip portion 171g.

Thereafter, the flexible substrate S carried into the second chamber 170 is supported on the curved surface of the rotary stage 171 and transported. In the second chamber 170, an inductively coupled plasma is generated by the high frequency power applied to the plasma generating part 173. Here, the plurality of plasma generators 173 disposed in each of the plurality of process regions can generate inductively coupled plasma for one region of the flexible substrate S to be transported.

The flexible substrate S passes between the rotating stage 171 and the plurality of plasma generating portions 173 and can be etched or deposited (S15). At this time, the barrier ribs 175 may divide the plasma generated by the plurality of plasma generating portions 173 to prevent interference between the plasma. Here, the heating unit 171a and the cooling unit 171c can stabilize the temperature of the flexible substrate S by heating or cooling the flexible substrate S, and the plasma sensing unit 177 can stabilize the temperature of the flexible substrate S It is possible to sense the generation time point and the disappearance time point of the inductively coupled plasma.

In addition, in a plurality of process regions, a series of processes for the flexible substrate S being transferred can be sequentially performed by the pre-process, the main process, and the post-process, so that the flexible substrate S, (S) can be processed.

Subsequently, the completed flexible substrate S is discharged to the first chamber 150 through the second buffer chamber 193. Thereafter, the flexible substrate S is wound around the substrate recovery roll 131. Here, the barrier supply roll 133 supplies the barrier film (B2) to the flexible substrate (S). Thus, the flexible substrate S is protected by the barrier film B2 on its surface and wound on the substrate recovery roll 131 (step S17).

Therefore, the flexible substrate processing apparatus according to the present embodiment and the flexible substrate processing method using the same can not only improve the productivity by using the roll-to-roll system, but also can be applied to a transfer space for transferring the flexible substrate, And the quality of the product can be improved since the process region to be performed is separated.

In addition, although the present embodiment describes that the flexible substrate is continuously supplied to the inside of the second chamber and the continuous process is performed, the processing apparatus controls the transfer of the flexible substrate and the process for the substrate is performed by step by step Step) method.

In addition, although the present embodiment is characterized in that the first chamber, the second chamber, and the buffer chamber are connected in the lateral direction so that the processing for the flexible substrate is performed in the vertical direction inside the second chamber, the processing apparatus includes the first chamber, The second chamber and the buffer chamber are connected in the longitudinal direction so that processing for the flexible substrate can be processed horizontally inside the second chamber.

An embodiment of the present invention described above and shown in the drawings should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art will be able to modify the technical idea of the present invention in various forms. Accordingly, such improvements and modifications will fall within the scope of the present invention as long as they are obvious to those skilled in the art.

100: Flexible substrate processing apparatus
110:
130: substrate recovery unit
150: first chamber
170: Second chamber
190: buffer chamber

Claims (19)

A chamber in which a plurality of process regions are formed;
A substrate supply roll disposed inside the chamber to supply the flexible substrate to the plurality of process areas;
A substrate recovery roll disposed inside the chamber to withdraw the flexible substrate from the substrate supply roll and recover the flexible substrate;
A rotary stage disposed inside the chamber and supporting the flexible substrate on a curved surface between the substrate supply roll and the substrate recovery roll to rotate and feed the flexible substrate; And
And an ICP (Inductively Coupled Plasma) antenna disposed in each of the plurality of process regions,
Wherein plasma is generated by RF power applied to the ICP antenna in the plurality of process regions.
The method according to claim 1,
Wherein the substrate supply roll and the substrate recovery roll are provided on one side of the rotation stage, the flexible substrate is supplied in a horizontal direction from the substrate supply roll toward the rotation stage, and the processed flexible substrate is transferred from the rotation stage to the substrate And is recovered horizontally toward the recovery roll.
The method according to claim 1,
Wherein the substrate supply roll and the substrate recovery roll are provided at one side of the rotation stage, the flexible substrate is supplied from the substrate supply roll in the vertical direction toward the rotation stage, and the processed flexible substrate is transferred from the rotation stage to the substrate And is vertically recovered toward the recovery roll.
The method according to claim 1,
Wherein the rotating stage is provided with a drum,
Wherein the flexible substrate is supported on a curved surface of the drum.
The method according to claim 1,
Wherein the plurality of ICP antennas are disposed parallel to a tangent line of the rotating stage so that individual control is possible.
The method according to claim 1,
Further comprising a plasma sensing unit disposed between the plurality of ICP antennas and the rotation stage for sensing a generation time point and a disappearing time point of the plasma.
The method according to claim 1,
Wherein the rotation stage is provided with a slip portion for reducing a frictional force generated between the flexible substrate and the rotation stage,
Wherein the slip section is provided with a first groove formed in an oblique direction with respect to a moving direction of the flexible substrate and a second groove formed in an oblique direction with respect to a moving direction of the flexible substrate and intersecting with the first groove The flexible substrate processing apparatus.
8. The method of claim 7,
And an inert gas is introduced into the first and second grooves.
The method according to claim 1,
The chamber
A first chamber in which the substrate supply roll and the substrate recovery roll are disposed inside,
And a second chamber in which the rotation stage is disposed inside and the ICP antenna is supported.
10. The method of claim 9,
Wherein the second chamber is maintained at a lower pressure than the first chamber.
10. The method of claim 9,
Wherein the chamber includes a buffer chamber disposed between the first chamber and the second chamber and maintained at a higher pressure than the second chamber,
Wherein the buffer chamber discharges particles that can flow in from the second chamber to the outside.
The method according to claim 1,
Wherein the process gas is an etching gas or a deposition gas.
(a) releasing the flexible substrate from a substrate feed roll disposed within the chamber;
(b) the flexible substrate is supported on a curved surface of a rotating stage disposed inside the chamber and rotated;
(c) generating plasma on the flexible substrate based on a process gas, the ICP antenna being disposed in each of a plurality of process regions formed in the chamber, the process gas being provided to the plurality of process regions, respectively; And
(d) the flexible substrate is recovered as a substrate recovery roll disposed inside the chamber.
14. The method of claim 13,
Wherein the step (c) comprises individually controlling the plurality of ICP antennas disposed in parallel to the tangent of the rotating stage, and sequentially generating plasma for the flexible substrate.
14. The method of claim 13,
Wherein the step (c) comprises sensing the generation time point and the disappearing time point of the plasma in each of the plurality of process areas.
14. The method of claim 13,
Wherein the chamber includes a first chamber in which the substrate feed roll and the substrate recovery roll are disposed inside and a second chamber in which the rotation stage is disposed inside and the ICP antenna is supported,
Further comprising: before the step (a), the second chamber is kept at a lower pressure than the first chamber.
17. The method of claim 16,
Wherein the chamber includes a buffer chamber disposed between the first chamber and the second chamber and maintained at a higher pressure than the second chamber,
Wherein the buffer chamber discharges particles that can flow from the second chamber to the outside of the buffer chamber.
14. The method of claim 13,
The step (c)
Wherein the flexible substrate is subjected to an etching process or a deposition process.
14. The method of claim 13,
The step (c)
Wherein the pre-processing, the main processing, and the post-processing are sequentially performed on the flexible substrate.

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