KR20150076702A - Self-powered Multi-chip COB LED Package - Google Patents

Self-powered Multi-chip COB LED Package Download PDF

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KR20150076702A
KR20150076702A KR1020130165220A KR20130165220A KR20150076702A KR 20150076702 A KR20150076702 A KR 20150076702A KR 1020130165220 A KR1020130165220 A KR 1020130165220A KR 20130165220 A KR20130165220 A KR 20130165220A KR 20150076702 A KR20150076702 A KR 20150076702A
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led
self
chip
substrate
power
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KR1020130165220A
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Korean (ko)
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노영환
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우송대학교 산학협력단
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Priority to KR1020130165220A priority Critical patent/KR20150076702A/en
Priority to PCT/KR2014/001468 priority patent/WO2015099240A1/en
Publication of KR20150076702A publication Critical patent/KR20150076702A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a self-powered multi-chip chip on board (COB) LED package and, more specifically, to a self-powered multi-chip COB LED package forming a light emitting diode (LED), a driving device for driving the LED, and a self-powered device for generating power for itself from an outside movement in order to supply the power to the LED driving device in a single package by using COP technology, thereby enabling minimization and improving durability.

Description

자가 발전 멀티 칩 COB LED 패키지{Self-powered Multi-chip COB LED Package}Self-powered multi-chip COB LED package < RTI ID = 0.0 >

본 발명은 자가 발전 멀티 칩 COB LED 패키지에 관한 것으로, 더욱 상세하게는 COB(Chip On Board) 기술을 적용하여 LED(Light Emitting Diode), LED를 구동하기 위한 구동 소자 및 LED 구동 소자에 전원을 공급하기 위해 외부의 움직임으로부터 스스로 전력을 생산하는 자가 발전 소자가 하나의 패키지로 형성됨에 따라 소형화가 가능하고 내구성을 향상시킨 자가 발전 멀티 칩 COB LED 패키지에 관한 것이다.
The present invention relates to a self-generated multi-chip COB LED package, and more particularly, to a self-powered multi-chip COB LED package using a COB (Chip On Board) technology to supply an LED (Light Emitting Diode), a driving device Chip multi-chip COB LED package that can be miniaturized and improved in durability as a self-generating device that generates power itself from external motion is formed in one package.

LED란 Light Emitting Diode의 약자로 빛을 발산하는 다이오드를 뜻하는 것으로, 전압 인가시 전기에너지를 광신호로 변환하는 반도체 소자이다. 일반 전자기기의 표시등이나 숫자 표시에 사용되는 등 우리의 일상생활에 흔히 쓰이고 있다. 초창기에는 낮은 휘도와 색깔의 한계가 있었으나 현재 새로운 LED 원재료와 진보된 생산 기술로 백색을 포함한 가시광선 영역이 모든 색깔의 고휘도 LED가 생산되고 있다. LED stands for Light Emitting Diode, which is a diode that emits light. It is a semiconductor device that converts electrical energy into an optical signal when voltage is applied. It is commonly used in our everyday life, such as being used for indicator lights and numeric display of general electronic devices. In the early days, there was a limit of low luminance and color, but now, new LED materials and advanced production technologies are producing high-brightness LEDs of all colors with visible light including white.

LED의 장점이자 특징은 기존의 전구에 비해 열이 적게 발생하므로 열손실로 인해 낭비되는 에너지가 적다는 것이다. 또한, 소형화가 가능하고, 가볍고, 내구성이 좋으며, 반영구적인 수명을 갖기 때문에 향후 더 광범위한 영역에서 응용되어 우리의 일상생활에서 사용되는 기존 광원을 대체할 것으로 전망하고 있다.The advantages and features of LEDs are that they generate less heat than conventional light bulbs and therefore have less energy to waste due to heat loss. In addition, it can be miniaturized, lightweight, durable and has a semi-permanent lifetime, so it is expected to be applied in a wider area in the future and replace the existing light source used in our daily life.

하지만 LED를 구동하기 위해서는 별도의 전원 공급원과 연결되거나, 배터리가 내장되어야만 한다. 따라서 별도의 전원 공급원과 연결되는 경우에는 한정된 위치에서 사용할 수밖에 없으며, 배터리가 내장된 경우에는 배터리의 교체나 충전이 반복되어야만 하는 번거로움이 있다.However, in order to drive the LED, it must be connected to a separate power source or have a built-in battery. Therefore, when the battery is connected to a separate power source, the battery can only be used in a limited position. If the battery is built in, the battery must be replaced or charged repeatedly.

상기와 같은 문제를 해결하기 위한 기술이 한국특허공개 제 2003-0000393호("자가 발전형 발광줄넘기", 2013.01.06)에 기재되어 있다. 상기 선행문헌에는 줄넘기 손잡이의 회전 시 전기를 발생시켜 줄넘기 줄에 내장된 LED에 전기를 공급하는 자가 발전수단이 구비된 자가 발전형 발광 줄넘기에 관한 것이다.A technique for solving the above problem is disclosed in Korean Patent Laid-Open Publication No. 2003-0000393 ("self-generated light emitting rope jumping ", issued on Mar. 01, 2013). The above-mentioned prior art document relates to a self-generated light rope jumping rope equipped with self-generating means for generating electricity when rotating a rope-knuckle knob to supply electricity to an LED built in a rope jumping rope.

하지만 상기 선행문헌에 따르면, LED 및 자가 발전수단을 줄넘기에 한정하므로 응용 범위가 제한적이며, LED와 자가 발전수단이 별도로 구성되어 있으므로 내구성을 확보하기 어렵다는 문제가 있다.
However, according to the prior art, the application range is limited because the LED and the self-generating means are limited to rope skipping, and the LED and the self-generating means are separately formed, so that it is difficult to secure durability.

한국특허공개 제 2003-0000393호("자가 발전형 발광줄넘기", 2013.01.06)Korean Patent Laid-Open Publication No. 2003-0000393 ("self-generated luminous jump rope ", issued on March 1, 2013)

본 발명은 상기한 문제점을 해결하기 위하여 안출된 것으로, 본 발명의 목적은 LED, LED 구동 소자 및 외부의 움직임(운동에너지)에 의해 자가 발전하는 전원 공급원이 COB 기술을 적용하여 하나의 패키지로 이루어짐으로써, 소형화 및 경량화가 가능하고 응용 범위를 확대시킨 자가 발전 멀티 칩 COB LED 패키지를 제공함에 있다.
SUMMARY OF THE INVENTION The present invention has been accomplished in order to solve the above problems, and an object of the present invention is to provide a power supply source that is self-generated by an LED, an LED driving device, and an external motion (kinetic energy) To provide a self-developed multi-chip COB LED package that can be miniaturized and lightweight and has a wider application range.

본 발명에 의한 자가 발전 멀티 칩 COB LED 패키지는 기판(10); 상기 기판(10) 상부에 구비되는 단수 또는 복수개의 LED(20)(Light Emitting Diode); 상기 기판(10) 상부에 구비되며, 상기 LED(20)를 구동시키기 위한 LED 구동회로를 포함하는 LED 구동 소자(30); 및 상기 기판(10) 상부에 구비되며, 외부 움직임으로부터 스스로 전력을 생성하여 상기 LED 구동 소자(30)에 전원을 공급하는 자가 발전 소자(40);The self-powered multi-chip COB LED package according to the present invention comprises a substrate 10; A plurality of LEDs (Light Emitting Diodes) 20 disposed on the substrate 10; An LED driving device 30 provided on the substrate 10 and including an LED driving circuit for driving the LED 20; And an electric power generating device (40) provided on the substrate (10) for generating electric power from external motion and supplying power to the LED driving device (30);

를 포함하여 이루어질 수 있다.. ≪ / RTI >

또한, 상기 LED 구동 소자(30)는, 상기 자가 발전 소자(40)로부터 공급되는 전압을 승압시켜 승압된 전압을 상기 LED(20)에 공급하도록 하는 승압 회로;를 더 포함할 수도 있다.The LED driving device 30 may further include a boosting circuit for boosting a voltage supplied from the self-power generating device 40 to supply a boosted voltage to the LED 20. [

또한, 본 발명은 하나의 패키지로 에폭시(50) 몰딩되어 이루어질 수 있으며, 에폭시(50) 몰딩 시 상기 자가 발전 소자(40)를 중심으로 빈 공간(41)이 형성되도록 할 수 있다.In addition, the present invention can be achieved by molding epoxy 50 in one package, and forming voids 41 around the self-generating element 40 when epoxy 50 is molded.

또, 본 발명에 있어서, 상기 LED 구동 소자(30) 및 자가 발전 소자(40)가 하나의 소자일 수로 이루어질 수도 있다.Also, in the present invention, the LED driving element 30 and the self-generating element 40 may be formed as one element.

또한, 본 발명에 있어서, 상기 LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)가 각각 와이어 본딩으로 연결되도록 할 수도 있으며, 상기 기판(10) 상에 상기 LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)의 전기적 연결을 위한 전극 패턴이 형성되어 상기 LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)와 상기 기판(10)이 와이어 본딩으로 연결되도록 할 수도 있다.
In the present invention, the LED 20, the LED driving device 30 and the self-power generating device 40 may be connected by wire bonding, and the LEDs 20, An electrode pattern for electrically connecting the LED driving element 30 and the self power generation element 40 is formed so that the LED 20, the LED driving element 30, the self power generation element 40, Or may be connected by bonding.

종래에는 LED, LED 구동 소자 및 전원 공급원이 별도로 구성되어 있어 그 응용 범위가 제한적이며 내구성을 확보하지 못하였지만, 본 발명은 기판에 상기 3가지 소자를 와이어 본딩하여 연결하고 난 후 몰딩하는 방법인 COB(Chip On Board) 방법을 이용하여 일체형의 패키지로 구성함에 따라 소형화, 경량화 및 신뢰성이 향상되고 외부에서 가해지는 충격에 의해 소자들 간의 연결 접점의 단락이나 단선 등의 변형을 방지할 수 있어 내구성이 강화되는 장점이 있다.Conventionally, the LED, the LED driving device, and the power source are separately formed, and the application range thereof is limited and durability is not ensured. However, the present invention is applicable to a COB (Chip On Board) method, it is possible to reduce the size, weight, and reliability of the package and to prevent the short-circuit or disconnection of the connecting contacts between the devices due to external impact, There is an advantage to be strengthened.

또한, LED 구동을 위해 외부의 전원 공급원과 연결되지 않고 스스로 전력을 생산하는 자가 발전 소자를 전원 공급원으로 이용함으로써 움직임이 있는 곳은 어디든지 본 발명에 따른 패키지를 부착하면 LED가 빛을 발산하게 되므로 응용 범위가 광범위하다는 장점이 있다.
In addition, since the self-power generating device that generates power by itself is not connected to an external power source for driving the LED, and the power source is used as a power source, the LED emits light when the package according to the present invention is attached to any place where there is movement. There is an advantage that the application range is wide.

도 1은 종래의 자가 발전형 발광줄넘기
도 2는 본 발명에 따른 자가 발전 멀티 칩 COB LED 패키지의 블록도
도 3은 본 발명에 따른 자가 발전 멀티 칩 COB LED 패키지의 첫 번째 실시예를 나타낸 개략도
도 4는 본 발명에 따른 자가 발전 멀티 칩 COB LED 패키지의 두 번째 실시예를 나타낸 개략도
도 5는 본 발명에 따른 자가 발전 멀티 칩 COB LED 패키지의 두 번째 실시예를 나타낸 부분단면도FIG. 1 is a view showing a conventional self-
2 is a block diagram of a self-powered multi-chip COB LED package according to the present invention;
Figure 3 is a schematic view of a first embodiment of a self-powered multi-chip COB LED package according to the present invention;
4 is a schematic view showing a second embodiment of a self-generating multi-chip COB LED package according to the present invention
5 is a partial cross-sectional view showing a second embodiment of the self-powered multi-chip COB LED package according to the present invention

이하, 본 발명의 기술적 사상을 첨부된 도면을 사용하여 더욱 구체적으로 설명한다.Hereinafter, the technical idea of the present invention will be described more specifically with reference to the accompanying drawings.

첨부된 도면은 본 발명의 기술적 사상을 더욱 구체적으로 설명하기 위하여 도시한 일예에 불과하므로 본 발명의 기술적 사상이 첨부된 도면의 형태에 한정되는 것은 아니다.
BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are included to provide a further understanding of the technical concept of the present invention, are incorporated in and constitute a part of the specification, and are not intended to limit the scope of the present invention.

도 2는 본 발명에 따른 자가 발전 멀티 칩 COB LED 패키지의 블록도이다. 도 2에 도시된 바와 같이, 본 발명은 크게 LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)로 이루어지며, 기판(10)이 더 포함되어 이루어질 수 있다.2 is a block diagram of a self-powered multi-chip COB LED package in accordance with the present invention. 2, the present invention mainly includes the LED 20, the LED driving device 30, and the self-power generating device 40, and may further include the substrate 10.

조금 더 상세하게는 LED(20)는 기판(10) 상부에 단수 또는 복수개가 구비되며, LED 구동 소자(30)도 기판(10) 상부에 구비되고, LED 구동회로를 포함하여 LED(20)를 구동시키는 역할을 한다. 자가 발전 소자(40)도 마찬가지로 기판(10) 상부에 구비되며 외부 움직임으로부터 스스로 전력을 생성하여 상기 LED 구동 소자(30)에 전원을 공급하도록 하는 역할을 한다.More specifically, the LED 20 is provided in the upper part of the substrate 10, and the LED driving element 30 is also provided on the substrate 10, and the LED 20 including the LED driving circuit It also plays a role of driving. The self-power generating element 40 is also provided on the substrate 10 and generates power from the external motion to supply power to the LED driving element 30. [

앞서 언급했듯이 LED(20)는 백열전구와 달리 번아웃을 일으키는 필라멘트를 사용하지 않아 더 낮은 온도로 동작한다. 뿐만 아니라 소비 에너지의 90%를 열로 낭비하는 백열전구와 달리 열을 많이 발생시키지 않아 에너지 낭비가 훨씬 적다. 또한 조명 효율(luminous efficacy) 측면에서도 대략 24 lm/W 정도인 백열전구를 훨씬 뛰어넘고 있으며 200 lm/W 이상의 효율을 내기도 하므로, 사용 범위가 점차 넓어지고 있다.As mentioned above, the LED 20 does not use a filament which causes a burnout unlike an incandescent lamp, and operates at a lower temperature. In addition, unlike an incandescent bulb that consumes 90% of the energy consumed by heat, it does not generate much heat and thus consumes less energy. In terms of luminous efficacy, the efficiency is much higher than that of an incandescent lamp of about 24 lm / W and the efficiency is more than 200 lm / W.

본 발명에서는 필요에 따라 고휘도의 LED를 사용하거나, 다양한 색깔 및 크기의 LED(20)를 직렬 또는 병렬로 연결한 LED 모듈을 사용할 수 있다. 또한 이러한 LED(20)를 구동하기 위한 LED 구동 소자(30)는 구체적으로 LED 열의 발광을 제어하고, LED 열에 공급되는 전력을 제어하는 전력 스위치의 스위칭 동작을 제어하는 중요한 역할을 한다. 본 발명에 따른 LED 구동 소자(30)는 일반적으로 많이 사용되는 다양한 LED 드라이버 IC 중 필요에 따라 적절하게 선택되어 사용될 수 있다.In the present invention, a high-brightness LED may be used or an LED module in which LEDs 20 of various colors and sizes are connected in series or in parallel may be used. In addition, the LED driving element 30 for driving the LED 20 plays an important role in controlling the switching operation of the power switch, specifically controlling the light emission of the LED string and controlling the power supplied to the LED string. The LED driving device 30 according to the present invention can be suitably selected and used according to needs among various commonly used LED driver ICs.

또, 본 발명을 구성하는 자가 발전 소자(40)는 운동에너지를 이용하여 자체적으로 전력을 생산하는 소자이다. 운동에너지를 이용하여 발전하는 방법 중 하나를 예로 들면, 여러번 감겨있는 코일의 중심에 스프링으로 연결된 자석을 두고 외부의 움직임(운동에너지)이 발생함에 따라 자석이 진동함에 따라 전류를 발생시키는 원리를 이용해 제작된 자가 발전 소자(40)를 이용할 수 있다. 이 외에도 운동에너지에 의해 자가 발전하는 소자라면 특별한 제한없이 사용될 수 있을 것이다.The self-generating element 40 constituting the present invention is an element that generates electric power by itself using kinetic energy. One example of a method of generating energy by using kinetic energy is to use a principle in which a spring connected to the center of a coil is wound several times to generate an electric current as the magnet vibrates as external motion (kinetic energy) is generated The produced self-generating element 40 can be used. In addition, if the device is self-generated by kinetic energy, it can be used without any limitation.

또한, 본 발명에 있어서, LED 구동 소자(30)는 자가 발전 소자(40)로부터 공급되는 전압을 승압시켜 승압된 전압을 상기 LED(20)에 공급하도록 하는 승압 회로를 더 포함하는 것이 바람직하다. LED(20)를 구동시키기 위해서는 임계전압(Vf) 이상의 전원이 공급되어야만 한다.(예를 들면, 적색 LED는 1.8 V, 초록색 LED는 2.1 V, 청색 LED는 3.2 V 의 임계 전압값을 가짐.) 따라서, 자가 발전 소자(40)로부터 생산되는 전압으로는 충분하지 않을 수 있어 Charge Pumping 기법을 이용하여 전압을 승압시켜야하기 때문이다.In the present invention, it is preferable that the LED driving element 30 further includes a boosting circuit for boosting the voltage supplied from the self-power generating element 40 and supplying the boosted voltage to the LED 20. In order to drive the LED 20, a power supply having a voltage equal to or higher than the threshold voltage Vf must be supplied (for example, a red LED has a threshold voltage of 1.8 V, a green LED has a threshold voltage of 2.1 V, and a blue LED has a threshold voltage of 3.2 V). Therefore, the voltage generated from the self-generating device 40 may not be sufficient, and the voltage must be stepped up using the charge pumping technique.

Charge Pumping 기법은 전원이 가지고 있는 전압보다 높거나 낮은 전압의 파워를 생성하기 위해 캐패시터(Capacitor)를 이용해 회로를 구성하는 것으로, 전압을 저장하기 위해 캐패시터를 사용하기 때문에 소형으로 제작할 수 있다.
The Charge Pumping technique uses a capacitor to generate a voltage higher or lower than the voltage of the power supply. The capacitor is used to store the voltage, so it can be made compact.

도 3은 본 발명에 따른 자가 발전 멀티 칩 COB LED 패키지의 첫 번째 실시예를 나타낸 개략도이다. 본 발명의 첫 번째 실시예는 전술한 바와 같이 기판(10), 기판(10) 상부에 구비되는 LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)로 구성되는데 있어서, 도 3에 도시된 바와 같이 에폭시(50) 몰딩되어 하나의 패키지로 이루어질 수 있다. 따라서, 본 발명에 의한 자가 발전 멀티 칩 COB LED 패키지에 외부에서 가해지는 충격에 의해 소자들 간의 연결 접점의 단락이나 단선 등의 변형을 방지할 수 있어 내구성이 향상된다.3 is a schematic view showing a first embodiment of a self-powered multi-chip COB LED package according to the present invention. The first embodiment of the present invention comprises the substrate 10, the LED 20 provided on the substrate 10, the LED driving element 30 and the self-power generating element 40 as described above, The epoxy 50 may be molded into a single package. Accordingly, it is possible to prevent deformation such as short-circuiting or disconnection of the connection point between the devices due to an impact applied to the self-generated multi-chip COB LED package according to the present invention, thereby improving durability.

또한, 도 3과 같이 에폭시(50) 몰딩 시 상기 자가 발전 소자(40)를 중심으로 빈 공간(41)이 형성되도록 하는 것이 바람직하다. 빈 공간(41)이 형성되도록 하는 이유는 전술한 바와 같이 운동에너지에 의해 발전하기 위해서 소자에 진동이 발생할 수 있으므로 발생되는 에너지를 용이하게 흡수하고 소자의 보호를 위함이다.3, it is preferable that an empty space 41 is formed around the self-generating element 40 when the epoxy 50 is molded. The reason why the empty space 41 is formed is that as described above, vibration may occur in the device due to the kinetic energy, so that the generated energy is easily absorbed and the device is protected.

본 발명에 의한 첫 번째 실시예에 따르면 도 3에 도시된 것처럼 LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)가 각각 와이어 본딩으로 연결될 수 있다. 와이어 본딩이란 소자의 패드(60)에 리드선(70)(예를 들어, 가는 금선)을 얹고 순간적으로 가열 압착하는 방법이다.
According to the first embodiment of the present invention, the LED 20, the LED driving device 30 and the self-power generating device 40 can be connected by wire bonding as shown in FIG. The wire bonding is a method in which a lead wire 70 (for example, a thin gold wire) is laid on the pad 60 of the element and instantaneously heated and pressed.

도 4는 본 발명에 따른 자가 발전 멀티 칩 COB LED 패키지의 두 번째 실시예를 나타낸 개략도이다. 도 4에 도시된 것처럼 본 발명의 두 번째 실시예는 첫 번째 실시예와 동일하게 기판(10), LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)로 구성되며, 에폭시(50) 몰딩되어 하나의 패키지로 이루어진다. 하지만 두 번째 실시예에서는 기판(10) 상에 LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)의 전기적 연결을 위한 전극 패턴이 형성되며, LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)와 기판(10)이 와이어 본딩으로 연결된다. 본 발명에 따른 자가 발전 멀티 칩 COB LED 패키지의 두 번째 실시예를 나타낸 부분단면도를 도 5에 나타내었다.4 is a schematic view showing a second embodiment of a self-generated multi-chip COB LED package according to the present invention. 4, the second embodiment of the present invention is constituted by the substrate 10, the LED 20, the LED driving element 30 and the self-power generating element 40 in the same manner as in the first embodiment, 50) molded into one package. However, in the second embodiment, an electrode pattern is formed on the substrate 10 for electrically connecting the LED 20, the LED driving element 30 and the self-power generating element 40, and the LED 20, the LED driving element 30 and the self-generating element 40 and the substrate 10 are connected by wire bonding. FIG. 5 is a partial sectional view showing a second embodiment of the self-generated multi-chip COB LED package according to the present invention.

또한, 본 발명에 있어서 도면에 도시하지는 않았지만 LED 구동 소자(30) 및 자가 발전 소자(40)가 별도의 소자가 아닌 하나의 소자인 경우도 포함될 수 있다.
Although not shown in the drawings, the LED driving device 30 and the self-generating device 40 may be a single device instead of a separate device.

따라서, 상기와 같은 구성을 갖는 본 발명은 종래와 같이 LED(20), LED 구동 소자(30) 및 전원 공급원이 별도로 구성되어 있어 그 응용 범위가 제한적이며 내구성을 확보하지 못하는 것과 달리, 기판(10)에 상기 3가지 소자를 와이어 본딩하여 연결하고 난 후 몰딩하는 방법인 COB(Chip On Board) 방법을 이용하여 일체형의 패키지로 구성함에 따라 소형화, 경량화 및 신뢰성이 향상되고 내구성이 강화되는 장점이 있다.The LED 20, the LED driving device 30, and the power supply source are separately formed and thus the application range thereof is limited and durability is not ensured. ), Which is a method in which the three devices are connected by wire-bonding and then molded, is formed as an integrated package by using a COB (Chip On Board) method, thereby improving miniaturization, weight reduction, reliability and durability .

또한, LED 구동을 위해 외부의 전원 공급원과 연결되지 않고 스스로 전력을 생산하는 자가 발전 소자(40)를 전원 공급원으로 이용함으로써 움직임이 있는 곳은 어디든지 본 발명에 따른 패키지를 부착하면 LED가 빛을 발산하므로 응용 범위가 광범위하다는 장점이 있다.
Also, by using the self-power generating device 40, which generates electricity by itself, without being connected to an external power source for driving the LED, the LED can emit light when the package according to the present invention is attached, It is advantageous that the range of application is wide.

본 발명은 상기한 실시예에 한정되지 아니하며, 적용범위가 다양함은 물론이고, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 다양한 변형 실시가 가능한 것은 물론이다.
It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

10 : 기판 20 : LED
30 : LED 구동 소자 40 : 자가 발전 소자
41 : 빈 공간 50 : 에폭시
60 : 패드 70 : 리드선 10: substrate 20: LED
30: LED driving element 40: self-generating element
41: Empty space 50: Epoxy
60: Pad 70: Lead wire

Claims (7)

기판(10);
상기 기판(10) 상부에 구비되는 단수 또는 복수개의 LED(20)(Light Emitting Diode);
상기 기판(10) 상부에 구비되며, 상기 LED(20)를 구동시키기 위한 LED 구동회로를 포함하는 LED 구동 소자(30); 및
상기 기판(10) 상부에 구비되며, 외부 움직임으로부터 스스로 전력을 생성하여 상기 LED 구동 소자(30)에 전원을 공급하는 자가 발전 소자(40);
를 포함하여 이루어지는 자가 발전 멀티 칩 COB(Chip On Board) LED 패키지.
A substrate 10;
A plurality of LEDs (Light Emitting Diodes) 20 disposed on the substrate 10;
An LED driving device 30 provided on the substrate 10 and including an LED driving circuit for driving the LED 20; And
A self-power generating device (40) provided on the substrate (10) for generating power from external motion and supplying power to the LED driving device (30);
Chip multi-chip COB (Chip On Board) LED package.
제 1항에 있어서,
상기 LED 구동 소자(30)는,
상기 자가 발전 소자(40)로부터 공급되는 전압을 승압시켜 승압된 전압을 상기 LED(20)에 공급하도록 하는 승압 회로;를 더 포함하는 것을 특징으로 하는 자가 발전 멀티 칩 COB LED 패키지.
The method according to claim 1,
The LED driving element (30)
Further comprising a step-up circuit that boosts the voltage supplied from the self-generating device (40) to supply the boosted voltage to the LED (20).
제 1항에 있어서,
상기 자가 발전 멀티 칩 COB LED 패키지는,
하나의 패키지로 에폭시(50) 몰딩되는 것을 특징으로 하는 자가 발전 멀티 칩 COB LED 패키지.
The method according to claim 1,
The self-powered multi-chip COB LED package comprises:
(50) is molded in one package.
제 3항에 있어서,
상기 자가 발전 멀티 칩 COB LED 패키지는,
에폭시(50) 몰딩 시 상기 자가 발전 소자(40)를 중심으로 빈 공간(41)이 형성되는 것을 특징으로 하는 자가 발전 멀티 칩 COB LED 패키지.
The method of claim 3,
The self-powered multi-chip COB LED package comprises:
Wherein the cavity (41) is formed around the self-generating element (40) when the epoxy (50) is molded.
제 1항에 있어서,
상기 자가 발전 멀티 칩 COB LED 패키지는,
상기 LED 구동 소자(30) 및 자가 발전 소자(40)가 하나의 소자인 것을 특징으로 하는 자가 발전 멀티 칩 COB LED 패키지.
The method according to claim 1,
The self-powered multi-chip COB LED package comprises:
Wherein the LED driving element (30) and the self-generating element (40) are one element.
제 1항에 있어서,
상기 자가 발전 멀티 칩 COB LED 패키지는,
상기 LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)가 각각 와이어 본딩으로 연결되는 것을 특징으로 하는 자가 발전 멀티 칩 COB LED 패키지.
The method according to claim 1,
The self-powered multi-chip COB LED package comprises:
Wherein the LED (20), the LED driving device (30), and the self-generating device (40) are connected by wire bonding.
제 1항에 있어서,
상기 자가 발전 멀티 칩 COB LED 패키지는,
상기 기판(10) 상에 상기 LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)의 전기적 연결을 위한 전극 패턴이 형성되며,
상기 LED(20), LED 구동 소자(30) 및 자가 발전 소자(40)와 상기 기판(10)이 와이어 본딩으로 연결되는 것을 특징으로 하는 자가 발전 멀티 칩 COB LED 패키지.The method according to claim 1,
The self-powered multi-chip COB LED package comprises:
An electrode pattern for electrically connecting the LED 20, the LED driving device 30 and the self-power generating device 40 is formed on the substrate 10,
Wherein the LED (20), the LED driving element (30), the self-power generating element (40) and the substrate (10) are connected by wire bonding.
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