KR20150073591A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting device Download PDFInfo
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- KR20150073591A KR20150073591A KR1020130161471A KR20130161471A KR20150073591A KR 20150073591 A KR20150073591 A KR 20150073591A KR 1020130161471 A KR1020130161471 A KR 1020130161471A KR 20130161471 A KR20130161471 A KR 20130161471A KR 20150073591 A KR20150073591 A KR 20150073591A
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- Prior art keywords
- plane
- semiconductor layer
- light emitting
- emitting device
- layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 238000004611 spectroscopical analysis Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
The present technology relates to a semiconductor light emitting device, particularly a semiconductor light emitting diode.
Light emitting diodes (LEDs) are semiconductor devices that convert electrical energy directly into light energy. In particular, white light emitting diodes (LEDs) using a combination of blue light emitting diodes and yellow phosphors have higher conversion efficiency than conventional incandescent and fluorescent light sources. It has been attracting attention as a next generation light source.
On the other hand, the efficiency of the light emitting diode is determined by the number of photons converted to the input current. The gallium nitride (GaN) single crystal device exhibits the best photoelectric efficiency up to now.
However, in general, a light-emitting diode using a GaN single crystal device has a problem that the efficiency of the device is deteriorated due to a quantum confined stark effect (QCSE) in the quantum well structure due to polarization, Crystal defects are generated due to the fact that they are grown on a different type of substrate because they are members of the same kind of substrate as the device and there is a problem that the efficiency of the device is deteriorated due to non-luminescent bonding phenomenon due to threading dislocation. In order to solve this problem, a technology for providing a highly efficient light emitting device by forming a hexagonal pyramid structure using a selective growth method has been developed as a technique for using semi-polarization and non-polarization characteristics.
Meanwhile, a conventional white light emitting diode is used as a combination of a blue light emitting diode and a yellow phosphor. This causes a problem that the color rendering index (CRI) represented by the quality of light is inferior. Therefore, in general, various phosphors are used in combination to increase the CRI of a white light emitting diode, which is disadvantageous in terms of photoelectric efficiency and process. In this connection, Patent Document 1 discloses a technique for realizing multicolor light emission by forming a plurality of protrusions by selective growth, but there are limitations in giving various parameters to multicolor light emission.
An aspect of the present invention is to provide a semiconductor light emitting device that has excellent photoelectric efficiency and can realize various color temperatures and a method of manufacturing the same.
According to an aspect of the present invention, there is provided a semiconductor device comprising: a first conductive base semiconductor layer; A mask layer formed on the base semiconductor layer and having an opening; A first conductive type multi-faced structure formed on the first conductive type base semiconductor layer exposed through the opening of the mask layer and having at least two kinds of crystal growth facets; And a protrusion including the active layer and the second conductivity type semiconductor layer.
In addition, the solution of the above-mentioned problems does not list all the features of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The various features and advantages and effects of the present invention will become more fully understood with reference to the following specific embodiments.
According to the present invention, the photovoltaic efficiency of the semiconductor light emitting device is improved by forming a multi-faceted structure having a semi-polarization plane and / or a non-polarization plane.
In addition, since light of different wavelengths is emitted from the respective crystal growth facets of the multi-faced structure, various color temperatures can be realized.
1 is a cross-sectional view schematically showing a semiconductor light emitting device according to an embodiment of the present invention.
Fig. 2 shows an example of a multi-faceted structure having a non-polarized surface and a semi-polarized surface.
3 is an SEM image of a semiconductor light emitting device according to Inventive Examples 1 to 3 of the present invention.
4 shows a spectrum according to CL spectral analysis of Inventive Example 1 of the present invention.
FIG. 5 shows a spectrum according to CL spectroscopic analysis of each crystal growth surface of Inventive Example 1 of the present invention.
Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the drawings, like reference numerals refer to like elements, and the size and thickness of each element may be exaggerated for clarity of explanation. The terms "upper" or "upper" in the following may include not only when placed directly in contact with a certain layer, but also when intermediate elements are arranged therebetween.
1 is a cross-sectional view schematically showing a semiconductor light emitting device according to an embodiment of the present invention.
Referring to FIG. 1, a first conductivity type
Although not shown in FIG. 1, the first conductive type
A
According to an embodiment of the present invention, the
The shape of the opening W is not particularly limited, and may have a shape of a strip, a circle, an ellipse, a polygon having a triangle or more, and a ring according to an embodiment of the present invention.
If the shape of the opening is a strip, the direction of the opening is one of <1-100>, <11-20>, and <21-30>, the width is 1 to 5 μm, and the length is 3 to 50 Lt; / RTI >
When the shape of the opening is due to cause, the diameter of the opening may be 1 to 10 mu m, and when the shape of the opening is ring, the diameter of the inscribed circle may be 5 mu m or more and the width may be 1 to 10 mu m.
The first conductive type multi-plane structure 12 is selectively grown on the first base
The first conductive multi-faceted structure 12 has at least two kinds of crystal growth facets. Referring to FIG. 2, the first conductive multi-faced structure includes a non-polarized surface and / or a semi-polarized surface . In this case, since the nitrogen (N) and the gallium (Ga) have the same number in the crystal growth face (facet), the inner field in the growth direction is canceled and the polarization characteristic is not exhibited. Therefore, the distortion of the energy band due to the piezoelectric polarization of the conventional c-plane gallium nitride does not occur, and problems such as reduction in the recombination efficiency of electrons and holes in the active layer can be solved.
In this regard, according to one embodiment of the present invention, the first conductive type multi-plane structure 12 has a C-plane as a polarization plane, an A-plane and an M-plane as non-polarization planes, a {1-101} plane , {11-2n} planes including {11-22}, and {21-3n} planes including {21-33} planes containing {1-10n} planes.
The multi-layer structure may be formed by appropriately adjusting the growth conditions and the shape of the openings. Examples of the growth conditions include a reactor temperature, a pressure, a V / III ratio, a precursor, and an ammonia flow rate.
The
The
On the other hand, since the composition of the indium (In) and the thickness of the well layer are formed differently for each crystal growth facet of the first conductive type multi-faced structure, So that the multicolor light emission can be realized.
The second conductivity
According to an embodiment of the present invention, the
Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following examples are only illustrative of the present invention in more detail and do not limit the scope of the present invention.
( Example )
An n-type GaN layer was formed on the C-plane of the sapphire substrate using a metal-organic chemical vapor deposition (MOCVD) process as a first conductive type base semiconductor layer. With the n-type GaN layer forming conditions, the temperature is 1100 ℃, the pressure was constant at 400mbar, the SiH 4 gas was used for the n-type doping.
Next, an SiO 2 mask layer was deposited to a thickness of 50 nm on the n-type GaN layer by a plasma enhanced chemical vapor deposition (PECVD) process, and an opening was formed by wet etching using BOE (Buffered Oxide Etchant). In each of the embodiments, the shape of the openings was different. In the case of Inventive Example 1, a strip-shaped opening having a direction of <1-100>, a width of 3 μm and a length of 20 μm was formed, > Direction, a width of 3 mu m, and a length of 20 mu m were formed in the same manner as in Example 1, and in Inventive Example 3, a circular opening with a diameter of 3 mu m was formed.
Then, the first conductive type multi-faced structure was selectively grown on the opening by a metal organic chemical vapor deposition (MOCVD) process for 10 minutes. As the growth conditions of the first conductive type polyhedral structure, the temperature was 1100 ° C., the pressure was 50 mbar, the V / III ratio was 100, the lateral growth rate was 0.2 μm / min, and SiH 4 gas was used for n-type doping. Respectively.
Next, an active layer and a second conductivity type semiconductor layer were formed on the surface of the first conductive type multi-facet structure, and the active layer was formed into a multiple quantum well structure composed of GaInN quantum wells and five periods of GaN quantum barrier. The growth temperature of the quantum well was 723 ° C and the growth temperature of the quantum barrier was constant at 753 ° C.
The semiconductor light emitting device manufactured by the above is shown in FIG. 3 (a) is an SEM image of the semiconductor light emitting device manufactured by Inventive Example 1, FIG. 3 (b) is an SEM image of the semiconductor light emitting device manufactured by Inventive Example 2, 3 is an SEM image of the semiconductor light-emitting device manufactured by the method of FIG.
In the case of Inventive Example 1, the C plane, {1-101} and {11-22} crystal planes were formed, and in Inventive Examples 2 and 3, the C plane and {1-101} crystal planes were formed. On the other hand, in Inventive Examples 2 and 3, the formed surfaces were the same, but the shapes of the structures and the area ratios of the surfaces were formed differently.
Referring to FIG. 3, it can be seen that a semiconductor light emitting device having completely different crystal growth planes can be obtained depending on the shape of the opening, even when manufactured under the same conditions.
( Example 2)
After electrodes were formed on the semiconductor light emitting device according to the inventive example 1, CL spectroscopic analysis was performed on the crystal growth facets of each of the inventive example 1 itself and inventive example 1 by a cathode ray-luminescent device (Cathodoluminescence) .
Fig. 4 shows a spectrum according to CL spectroscopy of Inventive Example 1. Fig. Referring to FIG. 5, the semiconductor light emitting device of Inventive Example 1 not only exhibits two peak wavelengths (444 nm and 555 nm), but also has a half-width of 444 nm peak wavelength larger than that of normal c-plane nitride .
5 (a) shows a spectrum according to CL spectroscopic analysis of each crystal growth surface of Inventive Example 1, and FIG. 5 (b) shows an enlarged spectrum according to CL spectroscopic analysis of crystal growth surface 3 5C and 5D are monochromatic light images of 444 nm and 470 nm, respectively. Referring to FIG. 5, it can be seen that the emission wavelengths are different from each other even in one protruding portion according to the respective crystal growth planes.
10: First conductive type base semiconductor layer
11: mask layer
12: First conductive type multi-faced structure
14:
16: second conductive type semiconductor layer
20:
30: Transparent conductive thin film
32: first electrode
34: Second electrode
W: opening
Claims (12)
A mask layer formed on the base semiconductor layer and having an opening; And
A first conductive type multi-faced structure formed on the first conductive type base semiconductor layer exposed through the opening of the mask layer and having at least two kinds of crystal growth facets; And a protrusion including an active layer and a second conductive type semiconductor layer.
The semiconductor light emitting device in which the mask layer comprises at least one member from the group consisting of SiO 2, SiO x, SiN, SiN x, Al 2 O 3 , and GaO.
Wherein the shape of the opening is any one of a strip, a circle, an ellipse, a polygon having a triangle or more, and a ring.
Wherein the direction of the strip-shaped opening is one of <1-100>, <11-20> and <21-30>, the width is 1 to 5 μm, and the length is 3 to 50 μm.
Wherein the circular opening has a diameter of 1 to 10 mu m.
Wherein the diameter of the inscribed circle of the ring-shaped opening is 5 占 퐉 or more and the width is 1 to 10 占 퐉.
Wherein the first conductive type multi-faced structure comprises a C-plane, an A-plane, an M-plane, a {1-10n} plane including {1-101}, a {11-2n} plane including {11-22} 33} of the {21-3} plane.
Wherein the semiconductor light emitting device further comprises a sapphire substrate, and the first conductive base semiconductor layer is formed on one of the C-plane and the R-plane of the sapphire substrate.
The semiconductor light emitting device may further include a nitride semiconductor substrate, wherein the first conductive base semiconductor layer is formed on a crystal growth surface of any one of the C plane, the M plane, the A plane, and the R plane of the nitride semiconductor substrate Wherein the semiconductor light emitting device is a semiconductor light emitting device.
Wherein the semiconductor light emitting device further comprises a silicon (Si) substrate, wherein the first conductive base semiconductor layer is formed on a crystal growth surface of any one of a (111) plane and a (100) plane of the silicon And a second electrode formed on the second electrode.
And a first electrode connected to the base semiconductor layer.
And a second electrode connected to the second conductive type semiconductor layer.
Priority Applications (1)
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KR1020130161471A KR20150073591A (en) | 2013-12-23 | 2013-12-23 | Semiconductor light emitting device |
Applications Claiming Priority (1)
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KR1020130161471A KR20150073591A (en) | 2013-12-23 | 2013-12-23 | Semiconductor light emitting device |
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KR20150073591A true KR20150073591A (en) | 2015-07-01 |
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KR1020130161471A KR20150073591A (en) | 2013-12-23 | 2013-12-23 | Semiconductor light emitting device |
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- 2013-12-23 KR KR1020130161471A patent/KR20150073591A/en not_active Application Discontinuation
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