KR20150073591A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR20150073591A
KR20150073591A KR1020130161471A KR20130161471A KR20150073591A KR 20150073591 A KR20150073591 A KR 20150073591A KR 1020130161471 A KR1020130161471 A KR 1020130161471A KR 20130161471 A KR20130161471 A KR 20130161471A KR 20150073591 A KR20150073591 A KR 20150073591A
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South Korea
Prior art keywords
plane
semiconductor layer
light emitting
emitting device
layer
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KR1020130161471A
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Korean (ko)
Inventor
김종규
황선용
박준혁
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주식회사 포스코
포항공과대학교 산학협력단
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Priority to KR1020130161471A priority Critical patent/KR20150073591A/en
Publication of KR20150073591A publication Critical patent/KR20150073591A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Disclosed is a semiconductor light emitting device. According to one aspect of the present invention, the semiconductor light emitting device comprises: a first conductive base semiconductor layer; a mask layer formed on the base semiconductor layer and having an opening; and a protruding unit formed on the first conductive base semiconductor layer exposed through the opening of the mask layer, and including a first conductive polyhedral structure having at least two types of crystal growth facets, an active layer formed on surfaces of the first conductive polyhedral structure, and a second conductive semiconductor layer.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present technology relates to a semiconductor light emitting device, particularly a semiconductor light emitting diode.

Light emitting diodes (LEDs) are semiconductor devices that convert electrical energy directly into light energy. In particular, white light emitting diodes (LEDs) using a combination of blue light emitting diodes and yellow phosphors have higher conversion efficiency than conventional incandescent and fluorescent light sources. It has been attracting attention as a next generation light source.

On the other hand, the efficiency of the light emitting diode is determined by the number of photons converted to the input current. The gallium nitride (GaN) single crystal device exhibits the best photoelectric efficiency up to now.

However, in general, a light-emitting diode using a GaN single crystal device has a problem that the efficiency of the device is deteriorated due to a quantum confined stark effect (QCSE) in the quantum well structure due to polarization, Crystal defects are generated due to the fact that they are grown on a different type of substrate because they are members of the same kind of substrate as the device and there is a problem that the efficiency of the device is deteriorated due to non-luminescent bonding phenomenon due to threading dislocation. In order to solve this problem, a technology for providing a highly efficient light emitting device by forming a hexagonal pyramid structure using a selective growth method has been developed as a technique for using semi-polarization and non-polarization characteristics.

Meanwhile, a conventional white light emitting diode is used as a combination of a blue light emitting diode and a yellow phosphor. This causes a problem that the color rendering index (CRI) represented by the quality of light is inferior. Therefore, in general, various phosphors are used in combination to increase the CRI of a white light emitting diode, which is disadvantageous in terms of photoelectric efficiency and process. In this connection, Patent Document 1 discloses a technique for realizing multicolor light emission by forming a plurality of protrusions by selective growth, but there are limitations in giving various parameters to multicolor light emission.

Korean Patent Publication No. 10-2005-0129790

An aspect of the present invention is to provide a semiconductor light emitting device that has excellent photoelectric efficiency and can realize various color temperatures and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a semiconductor device comprising: a first conductive base semiconductor layer; A mask layer formed on the base semiconductor layer and having an opening; A first conductive type multi-faced structure formed on the first conductive type base semiconductor layer exposed through the opening of the mask layer and having at least two kinds of crystal growth facets; And a protrusion including the active layer and the second conductivity type semiconductor layer.

In addition, the solution of the above-mentioned problems does not list all the features of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The various features and advantages and effects of the present invention will become more fully understood with reference to the following specific embodiments.

According to the present invention, the photovoltaic efficiency of the semiconductor light emitting device is improved by forming a multi-faceted structure having a semi-polarization plane and / or a non-polarization plane.

In addition, since light of different wavelengths is emitted from the respective crystal growth facets of the multi-faced structure, various color temperatures can be realized.

1 is a cross-sectional view schematically showing a semiconductor light emitting device according to an embodiment of the present invention.
Fig. 2 shows an example of a multi-faceted structure having a non-polarized surface and a semi-polarized surface.
3 is an SEM image of a semiconductor light emitting device according to Inventive Examples 1 to 3 of the present invention.
4 shows a spectrum according to CL spectral analysis of Inventive Example 1 of the present invention.
FIG. 5 shows a spectrum according to CL spectroscopic analysis of each crystal growth surface of Inventive Example 1 of the present invention.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the drawings, like reference numerals refer to like elements, and the size and thickness of each element may be exaggerated for clarity of explanation. The terms "upper" or "upper" in the following may include not only when placed directly in contact with a certain layer, but also when intermediate elements are arranged therebetween.

1 is a cross-sectional view schematically showing a semiconductor light emitting device according to an embodiment of the present invention.

Referring to FIG. 1, a first conductivity type base semiconductor layer 10 is formed on a bottom surface of a semiconductor light emitting device of the present invention. The first conductive base semiconductor layer 10 may be a semiconductor layer doped with a first type impurity, for example, an n-type impurity. The first conductive base semiconductor layer 10 may be formed of a III-V nitride semiconductor material, for example, n-GaN. As the n-type impurity, Si may be used.

Although not shown in FIG. 1, the first conductive type base semiconductor layer 10 may be formed on a substrate, and may be a sapphire substrate, a nitride semiconductor substrate, a silicon (Si) substrate, or the like Can be used. When the substrate is a sapphire substrate, the first conductive base semiconductor layer may be formed on one of the C-plane and the R-plane of the sapphire substrate. When the substrate is a nitride semiconductor substrate, The first conductive base semiconductor layer may be formed on a crystal growth surface of any one of the C plane, the M plane, the A plane, and the R plane of the nitride semiconductor substrate. When the substrate is a silicon (Si) substrate, The first conductive base semiconductor layer may be formed on the crystal growth surface of any one of the (111) plane and the (100) plane of the silicon (Si) substrate. By forming the first conductive type base semiconductor layer on the specific crystal growth surface of the substrate as described above, the formation state of the multi-faced structure can be changed. Further, the formation ratio of the non-polarization / anti-polarization crystal plane can be effectively controlled.

A mask layer 11 having an opening W is formed on the first conductive type base semiconductor layer 10.

According to an embodiment of the present invention, the mask layer 11 may include at least one type of insulator group made of SiO 2 , SiO x , SiN, SiN x , Al 2 O 3 , GaO, or the like.

The shape of the opening W is not particularly limited, and may have a shape of a strip, a circle, an ellipse, a polygon having a triangle or more, and a ring according to an embodiment of the present invention.

If the shape of the opening is a strip, the direction of the opening is one of <1-100>, <11-20>, and <21-30>, the width is 1 to 5 μm, and the length is 3 to 50 Lt; / RTI &gt;

When the shape of the opening is due to cause, the diameter of the opening may be 1 to 10 mu m, and when the shape of the opening is ring, the diameter of the inscribed circle may be 5 mu m or more and the width may be 1 to 10 mu m.

The first conductive type multi-plane structure 12 is selectively grown on the first base conductive layer 10 exposed through the opening W of the mask layer 11. Like the first conductive type base semiconductor layer, the first conductive type multi-plane structure may also be a semiconductor doped with a first type impurity, for example, a semiconductor doped with an n-type impurity. The first conductive type base semiconductor layer may be formed of a III-V group nitride semiconductor material, for example, n-GaN. As the n-type impurity, Si may be used.

The first conductive multi-faceted structure 12 has at least two kinds of crystal growth facets. Referring to FIG. 2, the first conductive multi-faced structure includes a non-polarized surface and / or a semi-polarized surface . In this case, since the nitrogen (N) and the gallium (Ga) have the same number in the crystal growth face (facet), the inner field in the growth direction is canceled and the polarization characteristic is not exhibited. Therefore, the distortion of the energy band due to the piezoelectric polarization of the conventional c-plane gallium nitride does not occur, and problems such as reduction in the recombination efficiency of electrons and holes in the active layer can be solved.

In this regard, according to one embodiment of the present invention, the first conductive type multi-plane structure 12 has a C-plane as a polarization plane, an A-plane and an M-plane as non-polarization planes, a {1-101} plane , {11-2n} planes including {11-22}, and {21-3n} planes including {21-33} planes containing {1-10n} planes.

The multi-layer structure may be formed by appropriately adjusting the growth conditions and the shape of the openings. Examples of the growth conditions include a reactor temperature, a pressure, a V / III ratio, a precursor, and an ammonia flow rate.

The active layer 14 and the second conductive semiconductor layer 16 are sequentially formed on the surface of the first conductive multi-layer structure 12. The first conductive type multi-plane structure 12, the active layer 14, and the second conductive type semiconductor layer 16, which are sequentially formed on the first base semiconductor layer 10, constitute a protrusion 20.

The active layer 14 is a layer that emits light by recombination of electrons and holes. According to one embodiment of the present invention, the active layer includes at least one or more quantum wells A multi quantum well layer may be stacked. Each multiple quantum well layer can be formed of, for example, a pair of InGaN / GaN, InGaN / InGaN, InGaN / AlGaN, or InGaN / InAlGaN quantum well layers and a quantum barrier layer.

On the other hand, since the composition of the indium (In) and the thickness of the well layer are formed differently for each crystal growth facet of the first conductive type multi-faced structure, So that the multicolor light emission can be realized.

The second conductivity type semiconductor layer 16 may be a semiconductor layer doped with a second type impurity, for example, a p-type impurity. The second conductivity type semiconductor layer may be formed of a III-V group nitride semiconductor material, for example, p-GaN. As the p-type impurity, Mg, Ca, Zn, Cd, and Hg may be used.

According to an embodiment of the present invention, the first electrode 32 is connected to one region of the first conductive type base semiconductor layer exposed by dry or wet etching of a part of the mask layer, Type semiconductor layer, and the second electrode 34 is connected to one region of the transparent conductive thin film. Such an electrode array structure can be changed into various forms as needed, and is not limited or limited by the FIG.

Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following examples are only illustrative of the present invention in more detail and do not limit the scope of the present invention.

( Example )

An n-type GaN layer was formed on the C-plane of the sapphire substrate using a metal-organic chemical vapor deposition (MOCVD) process as a first conductive type base semiconductor layer. With the n-type GaN layer forming conditions, the temperature is 1100 ℃, the pressure was constant at 400mbar, the SiH 4 gas was used for the n-type doping.

Next, an SiO 2 mask layer was deposited to a thickness of 50 nm on the n-type GaN layer by a plasma enhanced chemical vapor deposition (PECVD) process, and an opening was formed by wet etching using BOE (Buffered Oxide Etchant). In each of the embodiments, the shape of the openings was different. In the case of Inventive Example 1, a strip-shaped opening having a direction of <1-100>, a width of 3 μm and a length of 20 μm was formed, > Direction, a width of 3 mu m, and a length of 20 mu m were formed in the same manner as in Example 1, and in Inventive Example 3, a circular opening with a diameter of 3 mu m was formed.

Then, the first conductive type multi-faced structure was selectively grown on the opening by a metal organic chemical vapor deposition (MOCVD) process for 10 minutes. As the growth conditions of the first conductive type polyhedral structure, the temperature was 1100 ° C., the pressure was 50 mbar, the V / III ratio was 100, the lateral growth rate was 0.2 μm / min, and SiH 4 gas was used for n-type doping. Respectively.

Next, an active layer and a second conductivity type semiconductor layer were formed on the surface of the first conductive type multi-facet structure, and the active layer was formed into a multiple quantum well structure composed of GaInN quantum wells and five periods of GaN quantum barrier. The growth temperature of the quantum well was 723 ° C and the growth temperature of the quantum barrier was constant at 753 ° C.

The semiconductor light emitting device manufactured by the above is shown in FIG. 3 (a) is an SEM image of the semiconductor light emitting device manufactured by Inventive Example 1, FIG. 3 (b) is an SEM image of the semiconductor light emitting device manufactured by Inventive Example 2, 3 is an SEM image of the semiconductor light-emitting device manufactured by the method of FIG.

In the case of Inventive Example 1, the C plane, {1-101} and {11-22} crystal planes were formed, and in Inventive Examples 2 and 3, the C plane and {1-101} crystal planes were formed. On the other hand, in Inventive Examples 2 and 3, the formed surfaces were the same, but the shapes of the structures and the area ratios of the surfaces were formed differently.

Referring to FIG. 3, it can be seen that a semiconductor light emitting device having completely different crystal growth planes can be obtained depending on the shape of the opening, even when manufactured under the same conditions.

( Example  2)

After electrodes were formed on the semiconductor light emitting device according to the inventive example 1, CL spectroscopic analysis was performed on the crystal growth facets of each of the inventive example 1 itself and inventive example 1 by a cathode ray-luminescent device (Cathodoluminescence) .

Fig. 4 shows a spectrum according to CL spectroscopy of Inventive Example 1. Fig. Referring to FIG. 5, the semiconductor light emitting device of Inventive Example 1 not only exhibits two peak wavelengths (444 nm and 555 nm), but also has a half-width of 444 nm peak wavelength larger than that of normal c-plane nitride .

5 (a) shows a spectrum according to CL spectroscopic analysis of each crystal growth surface of Inventive Example 1, and FIG. 5 (b) shows an enlarged spectrum according to CL spectroscopic analysis of crystal growth surface 3 5C and 5D are monochromatic light images of 444 nm and 470 nm, respectively. Referring to FIG. 5, it can be seen that the emission wavelengths are different from each other even in one protruding portion according to the respective crystal growth planes.

10: First conductive type base semiconductor layer
11: mask layer
12: First conductive type multi-faced structure
14:
16: second conductive type semiconductor layer
20:
30: Transparent conductive thin film
32: first electrode
34: Second electrode
W: opening

Claims (12)

A first conductive type base semiconductor layer;
A mask layer formed on the base semiconductor layer and having an opening; And
A first conductive type multi-faced structure formed on the first conductive type base semiconductor layer exposed through the opening of the mask layer and having at least two kinds of crystal growth facets; And a protrusion including an active layer and a second conductive type semiconductor layer.
The method according to claim 1,
The semiconductor light emitting device in which the mask layer comprises at least one member from the group consisting of SiO 2, SiO x, SiN, SiN x, Al 2 O 3 , and GaO.
The method according to claim 1,
Wherein the shape of the opening is any one of a strip, a circle, an ellipse, a polygon having a triangle or more, and a ring.
The method of claim 3,
Wherein the direction of the strip-shaped opening is one of <1-100>, <11-20> and <21-30>, the width is 1 to 5 μm, and the length is 3 to 50 μm.
The method of claim 3,
Wherein the circular opening has a diameter of 1 to 10 mu m.
The method of claim 3,
Wherein the diameter of the inscribed circle of the ring-shaped opening is 5 占 퐉 or more and the width is 1 to 10 占 퐉.
The method according to claim 1,
Wherein the first conductive type multi-faced structure comprises a C-plane, an A-plane, an M-plane, a {1-10n} plane including {1-101}, a {11-2n} plane including {11-22} 33} of the {21-3} plane.
The method according to claim 1,
Wherein the semiconductor light emitting device further comprises a sapphire substrate, and the first conductive base semiconductor layer is formed on one of the C-plane and the R-plane of the sapphire substrate.
The method according to claim 1,
The semiconductor light emitting device may further include a nitride semiconductor substrate, wherein the first conductive base semiconductor layer is formed on a crystal growth surface of any one of the C plane, the M plane, the A plane, and the R plane of the nitride semiconductor substrate Wherein the semiconductor light emitting device is a semiconductor light emitting device.
The method according to claim 1,
Wherein the semiconductor light emitting device further comprises a silicon (Si) substrate, wherein the first conductive base semiconductor layer is formed on a crystal growth surface of any one of a (111) plane and a (100) plane of the silicon And a second electrode formed on the second electrode.
The method according to claim 1,
And a first electrode connected to the base semiconductor layer.
The method according to claim 1,
And a second electrode connected to the second conductive type semiconductor layer.
KR1020130161471A 2013-12-23 2013-12-23 Semiconductor light emitting device KR20150073591A (en)

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