KR20150072116A - Method of fabricating organic light emitting diode device - Google Patents

Abstract

The present invention relates to an OLED, and a method of fabricating an OLED including a thin encap substrate. The encap substrate is a metal foil made of alloy. The alloy includes NI content of 33 ~ 35% or 38.5 ~ 41.5% which is added to Fe with a thickness of 5 ~ 100μm. Thereby, warpage is not generated in a thermal hardening process, the durability of the OLED is improved, and also the total thickness of the OLED can be reduced. A bonding film is attached to the encap substrate by a lamination process before a cutting process for cutting the encap substrate. Then, the encap substrate and the bonding film are cut together into encap substrates of cell unit. Thereby, bezel can be reduced through a bonding margin removal and material costs can be reduced. Also, the cutting process can be simplified and processes can be simplified.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting diode

The present invention relates to an OLED, and relates to a method of manufacturing an OLED including an in-cap substrate having a thin thickness.

Until recently, CRT (cathode ray tube) was mainly used as a display device. However, a flat panel display device such as a plasma display panel (PDP), a liquid crystal display device (LCD), and an organic light emitting diode (OLED) Have been widely studied and used.

Among the above flat panel display devices, an organic light emitting element (hereinafter referred to as OLED) is a self-light emitting element, and a backlight used in a liquid crystal display device which is a non-light emitting element is not required.

In addition, it has a better viewing angle and contrast ratio than liquid crystal display devices, is advantageous in terms of power consumption, can be driven by DC low voltage, has a fast response speed, is resistant to external impacts due to its solid internal components, It has advantages.

Particularly, since the manufacturing process is simple, it is advantageous in that the production cost can be saved more than the conventional liquid crystal display device.

OLEDs having such characteristics are largely divided into a passive matrix type and an active matrix type. In a passive matrix type, a device is formed in a matrix form while crossing signal lines, whereas an active matrix type is a pixel A thin film transistor which is a switching element for on / off switching on / off.

In recent years, passive matrix type has many limitations such as resolution, power consumption and lifetime, and active matrix type OLED capable of realizing high resolution and large screen is actively being studied.

In addition, the OLED is divided into a top emission type and a bottom emission type according to the transmission direction of the emitted light. The lower emission type has a high degree of stability and a high degree of freedom in the process, Which is difficult to apply to high-resolution products.

In recent years, studies have been actively made on an upper light emitting method having a high aperture ratio and a high resolution.

1 schematically shows a cross section of a general active matrix type OLED, wherein the OLED is a top emission type.

As shown, the OLED 10 comprises a substrate 1 and an in-cap substrate 2 facing the substrate 1, and the substrate and the in-substrate 2 are spaced apart from each other via the adhesive film 3 Respectively.

A driving thin film transistor DTr is formed for each pixel region on the substrate 1 and a first electrode 11 and a first electrode 11 connected to each driving thin film transistor DTr are formed, An organic light emitting layer 13 for emitting light of a specific color and a second electrode 15 on the organic light emitting layer 13 are formed.

The organic luminescent layer 13 displays red (R), green (G), and blue (B) colors. In general, the red, green, The organic materials 13a, 13b and 13c are patterned and used.

The first and second electrodes 11 and 15 and the organic light emitting layer 13 formed therebetween form a light emitting diode. At this time, the OLED 10 having such a structure constitutes the first electrode 11 as the anode and the second electrode 15 as the cathode.

In recent years, such OLEDs 10 have been widely used as portable computers, desktop computer monitors, and wall-hung television sets. However, the OLED 10 has a large display area and has a remarkably reduced weight and volume Is actively proceeding.

In addition, a reduction in manufacturing cost and a simplified process are required for the OLED 10 as well.

SUMMARY OF THE INVENTION It is a first object of the present invention to provide a lightweight and thin OLED.

A second object of the present invention is to reduce the process cost and simplify the process, thereby improving the efficiency of the process.

In order to achieve the above object, the present invention provides a method of manufacturing a semiconductor device, comprising: forming an in-cap substrate in the form of a ledge through an electroplating process; Attaching an adhesive film to one surface of the in-cap substrate in the form of a lap through a lamination process; Cutting the in-cap substrate and the adhesive film in a cell unit; A driving and switching thin film transistor, and a substrate on which the light emitting diode is formed; Placing the in-cap substrate of the cell unit above the substrate so that the adhesive film faces the driving and switching thin film transistor and the light emitting diode, and then encapsulating the in-cup substrate with the substrate to encapsulate the substrate. A method of manufacturing a light emitting device is provided.

The in-cap substrate is formed to have a thickness of 5 to 100 탆 through the electrolytic plating method. The in-substrate substrate includes a negative (-) terminal fixed to the positive electrode (+), Is contained in a plating solution composed of an alloy added to iron (Fe) so as to have a composition ratio of 33 to 35% or 38.5 to 41.5%, is formed by an electrolytic plating method, and then separated from the substrate holding device.

The alloy contains 0.05 to 0.1 wt% of cobalt (Co), and the adhesive film is formed of one selected from OCA (Optical Cleared Adhesive), a thermosetting resin, and a thermosetting encapsulant.

Also, the in-cap substrate has a thermal expansion coefficient of 2.5 (ppm / ° C) to 5.5 (ppm / ° C).

As described above, according to the present invention, the content of nickel (Ni) added to iron (Fe) having a thickness of 5 to 100 mu m is 33 to 35% or 38.5 to 41.5 %, It is possible to reduce the overall thickness of the OLED while improving the durability of the OLED itself, without causing warping in the thermal curing process.

In addition, since the surface roughness is very low, defects due to fine dust and the like are very small, smooth surface characteristics can be ensured, and even when a curved display device or a flexible display device is implemented, an extremely high strength is obtained.

In addition, before the step of cutting the in-cap substrate, the adhesive film is first attached to the cap substrate, which is the ledge, through the lamination process, and then the cap substrate and the adhesive film are cut at the same time to form an in- It is not necessary to consider a separate cohesion margin for lamination. Thus, it is possible to reduce the material cost while reducing the bezel by eliminating the cohesion margin, and also it is possible to simplify the cutting process and simplify the process There is an effect that can be.

In addition, it is possible to omit the step of cutting the edges of the separate ink substrate and the adhesive film, thereby simplifying the process and improving the efficiency of the process.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 schematically shows a cross-section of a general active matrix type OLED;
2 is a cross-sectional view schematically illustrating an OLED according to an embodiment of the present invention.
Figs. 3A to 3C are schematic views showing a step of forming an in-caust substrate through an electrolytic plating process according to a process flow. Fig.
4A to 4D are process cross-sectional views illustrating an encapsulation process of an OLED according to an embodiment of the present invention in accordance with a process sequence.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

2 is a cross-sectional view schematically showing an OLED according to an embodiment of the present invention.

Meanwhile, the OLED 100 is divided into a top emission type and a bottom emission type according to a transmission direction of emitted light. Hereinafter, an upper emission type will be described as an example of the present invention.

The OLED 100 according to the exemplary embodiment of the present invention includes a substrate 101 on which a driving thin film transistor DTr and a light emitting diode E are formed is encapsulated by an in- .

A semiconductor layer 103 is formed on the pixel region P on the substrate 101. The semiconductor layer 103 is made of silicon and has a central portion including an active region 103a and a channel region 103b. And source and drain regions 103b and 103c doped with impurities at a high concentration on both sides thereof.

A gate insulating layer 105 is formed on the semiconductor layer 103.

The gate electrode 107 and the gate wiring extending in one direction are formed on the gate insulating film 105 in correspondence with the active region 103a of the semiconductor layer 103 and not shown in the figure.

The first interlayer insulating film 109a and the gate insulating film 105 under the first interlayer insulating film 109a are formed on the entire upper surface of the gate electrode 107 and the gate wiring (not shown) And first and second semiconductor layer contact holes 116 exposing the source and drain regions 103b and 103c located on both sides of the first and second semiconductor layer contact holes 103a and 103a, respectively.

Next, upper portions of the first interlayer insulating film 109a including the first and second semiconductor layer contact holes 116 are connected to the source and drain regions (the first and second semiconductor layer contact holes 116) Source and drain electrodes 110a and 110b are formed to be in contact with the gate electrodes 103a and 103b and 103c, respectively.

A second interlayer insulating film having a drain contact hole 117 exposing the drain electrode 110b over the first interlayer insulating film 109a exposed between the source and drain electrodes 110a and 110b and the two electrodes 110a and 110b, An insulating film 109b is formed.

The semiconductor layer 103 including the source and drain electrodes 110a and 110b and the source and drain regions 103b and 103c in contact with the electrodes 110a and 110b and the gate insulating film The gate electrode 105 and the gate electrode 107 constitute a driving thin film transistor DTr.

On the other hand, although not shown in the drawing, data lines (not shown) are formed which cross the gate wiring (not shown) and define the pixel region P. The switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr and is connected to the driving thin film transistor DTr.

In the drawing, the switching thin film transistor (not shown) and the driving thin film transistor DTr are shown as an example of a top gate type in which the semiconductor layer 103 is a polysilicon semiconductor layer. As a variation thereof, It may be formed as a bottom gate type of impurity amorphous silicon.

A portion of the second interlayer insulating film 109b which is connected to the drain electrode 110b of the driving thin film transistor DTr and substantially displays an image is formed on the light emitting diode E A first electrode 111 constituting an anode is formed.

The first electrode 111 is formed for each pixel region P and a bank 119 is located between the first electrodes 111 formed for each pixel region P. [

That is, the first electrode 111 is formed in a structure in which the bank 119 is divided into the pixel regions P with the boundary portion for each pixel region P being separated.

An organic light emitting layer 113 is formed on the first electrode 111.

Here, the organic light emitting layer 113 may be a single layer made of a light emitting material. In order to increase the light emitting efficiency, a hole injection layer, a hole transport layer, an emitting material layer, An electron transport layer, and an electron injection layer.

In general, the organic light emitting layer 113 displays red (R), green (G), and blue (B) colors. And organic materials 113a, 113b, and 113c that emit light of a different color (B) are used in a pattern.

A second electrode 115, which forms a cathode, is formed on the entire surface of the organic light emitting layer 113.

At this time, the second electrode 115 has a bilayer structure and includes a semitransparent metal film in which a metal material having a low work function is thinly deposited. At this time, the second electrode may be a two-layer structure in which a transparent conductive material is thickly deposited on a semitransparent metal film.

Therefore, the light emitted from the organic light emitting layer 113 is driven by the upper light emitting method, which is emitted toward the second electrode 115.

When a predetermined voltage is applied to the first electrode 111 and the second electrode 115 in accordance with a selected color signal, the OLED 100 emits a positive voltage, which is injected from the first electrode 111, The provided electrons are transported to the organic light emitting layer 113 to form an exciton. When the excitons transit from the excited state to the ground state, light is emitted and emitted in the form of visible light.

At this time, the emitted light passes through the transparent second electrode 115 and exits to the outside, so that the OLED 100 realizes an arbitrary image.

An encapsubstrate 210 is provided on the driving TFT DTr and the light emitting diode E and the substrate 101 and the encapsulating substrate 210 are separated from each other by an adhesive film 102 having adhesive properties .

Thereby, the OLED 100 is encapsulated.

The adhesive film 102 protects the driving thin film transistor DTr and the light emitting diode E formed on the substrate 101 by preventing external moisture from penetrating into the light emitting diode E, (E) and is formed on the substrate (101).

The adhesive film 102 is formed of a selected one of OCA (Optical Cleared Adhesive), a thermosetting resin or a thermosetting encapsulant to seal the driving thin film transistor DTr and the light emitting diode E on the substrate 101.

The substrate 101 may be formed of glass, plastic, stainless steel, or the like, and the in-cap substrate 210 may be formed of a metal foil.

Here, the in-cap substrate 210 made of a metal foil is formed to have a thickness D2 of 5 to 100 mu m. By forming the in-cap substrate 210 with a metal foil, Can be formed to be thinner than the thickness (D1 in FIG. 1) of the substrate (2 in FIG. 1), thereby reducing the overall thickness of the OLED 100.

In addition, the durability of the OLED 100 itself can be improved in spite of the reduction in the thickness of the OLED 100.

The in-cap substrate 210 made of a metal foil has a coefficient of thermal expansion of 2.5 * 10 -6 / ° C (2.5 ppm / ° C) to 5.5 * 10 -6 / It is necessary to prevent the occurrence of warpage of the OLED 100 due to different thermal expansion coefficients in the course of the thermal curing process or the like.

For this, the in-cap substrate 210 is preferably made of an alloy of iron (Fe) and nickel (Ni) having a low thermal expansion coefficient.

The alloy of iron (Fe) and nickel (Ni) is INVAR (Fe-36Ni), Fe-42Ni alloy (Alloy) and KOVAR (Fe-Ni-Co) And has a coefficient of thermal expansion of 0.7 x 10 / K (0.7 ppm / DEG C) in the temperature range of -100 DEG C.

(KOVAR) Fe-33Ni-4.5Co, which contains cobalt, has a coefficient of thermal expansion of 0.55ppm / ° C at a temperature range of 20-100 ° C and a content of nickel (Ni) (42 Ni Alloy), it has a thermal expansion coefficient of 5.3 ppm / ° C in the temperature range of 20 to 100 ° C.

The thermal expansion coefficient of 5.3 ppm / ° C is the same as the thermal expansion coefficient of silicon (Si).

Therefore, when a metal foil is formed using an INVAR (Fe-36Ni) alloy having a composition ratio of iron (Fe) of 64% and nickel (Ni) of 36%, the thermal expansion coefficient The in-cap substrate 210 can be formed.

A metal foil may be formed using an alloy having a composition ratio of iron (Fe) of 58% and nickel (Ni) of 42%. In addition to iron (Fe) and nickel (Ni), cobalt (KOVAR, Fe-Ni-Co) alloy may be used to form the metal foil.

That is, the OLED 100 of the present invention is an alloy having a composition ratio of Ni (Ni) added to iron (Fe) of 33 to 35% or 38.5 to 41.5%, and a metal foil The in-cap substrate 210 having the thermal expansion coefficient of 2.5 (ppm / 占 폚) to 5.5 (ppm / 占 폚) which is the same as or similar to the substrate 110 can be formed.

At this time, the in-cap substrate 210 may contain 0.05 to 0.1 wt% of cobalt (Co).

Accordingly, it is possible to prevent the occurrence of warping of the OLED 100 due to the different thermal expansion coefficients in the course of the thermal curing process and the like.

Meanwhile, the in-cap substrate 210 made of a metal foil having a thickness (D2) of 5 to 100 mu m according to an embodiment of the present invention can be formed through an electrolytic plating method. Referring to FIGS. 3A to 3C, Let's take a closer look.

Figs. 3A to 3C are schematic views showing the step of forming an in-caust substrate through an electrolytic plating process according to a process flow.

Prior to the explanation, the electrolytic plating method is a method for plating metal on a surface of a subject to be plated by connecting an object to be plated to a cathode and a metal for plating to an anode, and separating metal ions and electrons from the anode The separated electrons move to the cathode along the electric field formed between the anode and the cathode, and the metal ions are precipitated as a plating solution. The metal ions separated from the anode move to the cathode through the plating solution, which is an electrolyte. Electrolytic plating is performed on the surface of the object to be plated, where the electrons and the metal ions are transmitted through the electric field and connected to the cathode.

Therefore, first, as shown in Fig. 3A, a substrate fixing apparatus 301 comprising a negative (-) terminal is provided.

The substrate holding apparatus 301 including the negative terminal fixes the cap substrate 210 (see FIG. 3C), which is a plating chain of electrolytic plating, and may be made of stainless steel.

Next, as shown in FIG. 3B, the substrate holding apparatus 301 is immersed in the plating tank 303 containing the plating liquid 305. At this time, the plating tank 303 is filled with a plating liquid 305 And positive electrodes (+, 307) where an oxidation reaction takes place are fixedly arranged around the inner wall of the plating vessel 303 with a certain interval therebetween in the vicinity of the inner wall.

At this time, the plating solution 305 is made of an alloy containing 0.05 to 0.1 wt% of cobalt (Co) and added to iron (Fe) such that nickel has a composition ratio of 33 to 35% or 38.5 to 41.5% The substrate holding apparatus 301 comprising terminals is positioned between the positive electrodes (+, 307).

Therefore, electrons are separated from the positive electrode (+, 307) by flowing current to the positive electrode (+, 307) and the negative electrode (-) terminal and separated electrons are formed between the positive electrode (+, 307) (-) terminal along the electric field which is applied to the substrate fixing device 301.

At this time, metal ions composed of iron (Fe) and nickel (Ni) are precipitated from the plating liquid 305. The metal ions separated from the positive electrode (+) 307 are also passed through the plating liquid 305, The substrate fixing apparatus 301 is moved to the substrate fixing apparatus 301 where electrons and metal ions are combined and electroplated 309 is formed on the surface of the substrate fixing apparatus 301.

3C, after the substrate holding apparatus 301 having the electrolytic plating 309 is taken out from the plating tank (303 in FIG. 3B) as shown in FIG. 3C, By separating the foil, the content of nickel (Ni) added to iron (Fe) according to the embodiment of the present invention is 33 to 35% or 38.5 to 41.5%, and the content of cobalt (Co) is 0.05 to 0.1 wt% Cap substrate 210 made of a metal foil made of an alloy containing silicon.

At this time, the in-cap substrate 210 made of a metal foil may be formed to have a thickness of 5 to 100 μm (D 2 in FIG. 2), and its thickness (D 2 in FIG. 2) can be adjusted by increasing or decreasing the electroplating time have.

Thus, by forming the in-cap substrate 210 made of a metal foil having a thermal expansion coefficient similar to that of the substrate 101 (Fig. 2), the OLED of the present invention (100 of Fig. 2) The in-cap substrate 210 can be formed to have a small thickness (D2 in FIG. 2) in comparison with the thickness (D1 in FIG. 1) of the in-cap substrate (2 in FIG. 1) The overall thickness of 100 of FIG. 2) can be reduced.

In addition, the durability of the OLED (100 in FIG. 2) itself can be improved despite reducing the thickness of the OLED (100 in FIG. 2).

That is, by forming the in-cap substrate 210 through the electrolytic plating method, the in-cap substrate 210 of the present invention has a hardness of 300 HV as compared with the case of the in-cap substrate (2 of FIG. 1) The hardness is improved by 70 to 120 HV.

In addition, the in-cap substrate 210 formed through electrolytic plating has a surface roughness value of 5 nm, but the surface roughness value of the in-cap substrate (2 in FIG. 1) formed of a metal material through the rolling method is 0.5 μm, The surface roughness of the in-cap substrate 210 formed through the through-hole is extremely lower than that of the in-cap substrate (2 of FIG. 1) formed of a metal material through the rolling method. Thus, defects due to fine dust are very small, have.

Particularly, since the in-cap substrate 210 is formed of a metal foil having a small thickness (D2 in FIG. 2), it has a very high strength even in the process of realizing a curved display device or a flexible display device which is recently required.

2) of the OLED according to the present invention (100 in FIG. 2) is reduced in overall thickness of the OLED (100 in FIG. 2) by the in-cap substrate 210 made of a metal foil and its durability is improved. 2 < / RTI > to 100), a very good effect can be expected in implementing a curved display device or a flexible display device.

In addition, the OLED of the present invention (100 of FIG. 2) can reduce the process cost by forming the in-cap substrate 210 with a metal foil having a small thickness (D2 in FIG. 2) Can be improved.

4A to 4D are process cross-sectional views illustrating an encapsulation process of an OLED according to an embodiment of the present invention in accordance with a process sequence.

As shown in Fig. 4A, an adhesive film 420 in the form of a lantern is attached to the in-cab substrate 410 in the form of a ledger through a lamination process.

At this time, the in-cap substrate 410 in the form of a ledge has a composition ratio of nickel (Ni) added to iron (Fe) by 33 to 35% or 38.5 to 41.5% by electrolytic plating, cobalt (Co) And is formed of a metal foil having a thickness of 5 to 100 mu m in an alloy containing 0.1 wt%.

4B, the in-cap substrate 410 and the adhesive film 420 are cut at the same time to form an in-cap substrate 210 for each cell.

At this time, although the cutting process uses the laser L as an example, it may be performed by forming a separate flaw on the in-cap substrate 410 of the ledge shape and by using a stamping method using a mold or woodcarving.

Next, as shown in FIG. 4C, an in-cap substrate 210 on which an adhesive film 102 is adhered is formed on a substrate 101 on which a driving and switching thin film transistor DTr, () and a light emitting diode E are formed The adhesive film 102 is attached to one surface of the in-cap substrate 210 facing the substrate 101. [

4D, the encapsulation process is completed by directly bonding the substrate 101 and the encapsulation substrate 210 to complete the OLED 100 according to the embodiment of the present invention.

Here, the OLED 100 of the present invention is formed such that the in-cap substrate 210 is formed to have a small thickness (D2 in FIG. 2), and the adhesive film 420 is attached to the inner surface of the in- The in cap substrate 410 and the adhesive film 420 can be simultaneously cut in accordance with the size of the substrate 101 so that the in-cap substrate 210 corresponding to the size of the substrate 101 can be directly cut off from the substrate 101, so that the efficiency of the process can be improved.

In detail, when the in-cap substrate 210 is formed of a metal material formed by glass or rolling, the thickness (D1 in FIG. 1) of the in-cap substrate (2 in FIG. 1) 2) and the adhesive film (3 in Fig. 1) are cut through separate cutting steps. In this way, the in-cap substrate (2 in Fig. 1) ) Should consider the cohesion margin.

That is, in the lamination process, the in-caust substrate is formed in such a manner that the adhesive film (3 in Fig. 1) is formed in consideration of the spread of the adhesive film (3 in Fig. 1) (2 in Fig. 1) and the adhesive film (3 in Fig. 1) so as to have a size as large as about 100 mu m do.

That is, the in-cap substrate (2 in FIG. 1) is cut to have a wide size of about 200 to 300 μm considering the adhesion margin with the adhesive film (3 in FIG. 1).

Therefore, the in-cap substrate (2 in FIG. 1) is formed to be larger in consideration of the cohesion margin of the in-cap substrate (2 in FIG. 1) and the adhesive film (3 in FIG. 1) and the material cost of the in-cap substrate (2 in FIG. 1) and the adhesive film (3 in FIG. 1) is also increased.

In addition, as the in-substrate substrate (2 in FIG. 1) and the adhesive film (3 in FIG. 1) are processed through separate cutting processes, the process becomes complicated.

2) and the adhesive film (3 in Fig. 1) are cut along the laminated process while the in-cap substrate (2 in Fig. 1) and the adhesive film The process of lamination becomes complicated, so that the process becomes very complicated.

In contrast, the OLED 100 of the present invention is formed by forming the in-cap substrate 210 to have a thin thickness (D2 in FIG. 2) of 5 to 100 μm, The in-cap substrate 210 is formed by attaching the adhesive film 420 to the cap substrate 410 by a lamination process and cutting the cap substrate 410 and the adhesive film 420 at the same time, And a separate adhesion margin for lamination of the adhesive film 420 may not be considered.

As a result, it is possible to prevent the widens of the bezel from being widened by eliminating the cohesion margin, and to reduce the material cost. In addition, the cutting process can be simplified, and the process can be simplified.

Further, it is possible to omit a separate process for cutting the edges of the separate in-cap substrate 210 and the adhesive film 102, thereby simplifying the process and improving the efficiency of the process.

As described above, the OLED 100 according to the embodiment of the present invention is formed by stacking the in-cap substrate 210 with the Ni (Ni) added to the Fe having a thickness of 5 to 100 mu m (D2 in Fig. 2) Is formed of a metal foil having a composition ratio of 33 to 35% or 38.5 to 41.5% and an alloy containing 0.05 to 0.1 wt% of cobalt (Co), no warping occurs in the thermosetting step, The in-cap substrate 210 can be formed to have a small thickness (D2 in FIG. 2) as compared with the case where the in-cap substrate (2 in FIG. 1) is formed of the formed metal material, so that the overall thickness of the OLED 100 can be reduced.

In addition, the durability of the OLED 100 itself can be improved in spite of the reduction in the thickness of the OLED 100.

In addition, since the surface roughness is very low, defects due to fine dust and the like are very small, smooth surface characteristics can be ensured, and even in the process of embodying a curved display device or a flexible display device, it has a very high strength.

The adhesive film 420 is attached to the cap substrate 410 through the lamination process before the cutting process of cutting the in-cap substrate 210 and then the cap substrate 410 and the adhesive film 420 are simultaneously cut By forming the cell-based in-cap substrate 210, it is not necessary to consider a separate cohesion margin for laminating the in-cap substrate 210 and the adhesive film 102, thereby reducing the material cost through eliminating the cohesion margin And the cutting process can be simplified, so that the process can be simplified.

In addition, it is possible to omit the step of cutting the edges of the separate in-cap substrate 210 and the adhesive film 102, so that the process can be simplified and the efficiency of the process can be improved.

The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention.

101: substrate, 102: adhesive film, 210: in-cap substrate
DTr, E: driving thin film transistor and light emitting diode

Claims (6)

Forming an in-cab substrate in the form of a ledge through an electrolytic plating process;
Attaching an adhesive film to one surface of the in-cap substrate in the form of a lap through a lamination process;
Cutting the in-cap substrate and the adhesive film in a cell unit;
A driving and switching thin film transistor, and a substrate on which the light emitting diode is formed;
Placing the in-cap substrate of the cell unit above the substrate so that the adhesive film faces the driving and switching thin film transistor and the light emitting diode, and then encapsulating the in-cup substrate with the substrate and encapsulating
Gt; < / RTI >
The method according to claim 1,
Wherein the in-cap substrate is formed to have a thickness of 5 to 100 mu m through the electrolytic plating method.
3. The method of claim 2,
The in-cap substrate is composed of a negative electrode (-) terminal fixed to the substrate and a positive electrode (+) fixedly disposed thereon and an alloy added to iron (Fe) such that nickel (Ni) has a composition ratio of 33 to 35% or 38.5 to 41.5% Wherein the first electrode is formed in an electroplating manner and then separated from the substrate holding device.
The method of claim 3,
Wherein the alloy contains 0.05 to 0.1 wt% of cobalt (Co).
The method according to claim 1,
Wherein the adhesive film is formed of one selected from OCA (Optical Cleared Adhesive), a thermosetting resin, and a thermosetting encapsulant.
The method according to claim 1,
Wherein the in-substrate substrate has a thermal expansion coefficient of 2.5 (ppm / 占 폚) to 5.5 (ppm / 占 폚).

Images