KR20150056324A - Light emitting device - Google Patents

Abstract

A light emitting device according to an embodiment comprises a first semiconductor doped by a first dopant; an active layer located on the first semiconductor semiconductor layer; a second semiconductor layer located on the active layer, and doped with a second dopant having polarity opposite to the first dopant; and multiple grooves formed on the upper surface of the second semiconductor layer, wherein the grooves is characterized by comprising a center point being the center of the grooves and a boundary part surrounding the center point and forming a boundary between the multiple grooves. The cetner point is located adjacent to the active layer more than the boundary part.

Description

[0001]

An embodiment relates to a light emitting element.

As a typical example of a light emitting device, a light emitting diode (LED) is a device for converting an electric signal into an infrared ray, a visible ray, or a light using the characteristics of a compound semiconductor, and is used for various devices such as household appliances, remote controllers, Automation equipment, and the like, and the use area of LEDs is gradually widening.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, it is important to increase the luminance of the LED as the brightness required for a lamp used in daily life and a lamp for a structural signal is increased.

The light generated in the active layer has a problem that light emitted from the boundary surface of the light emitting structure escapes over a certain angle due to the difference in refractive index with air is totally reflected and disappears inside the light emitting structure.

The embodiment provides a light emitting device having improved light extraction efficiency.

A light emitting device according to an embodiment includes a first semiconductor layer doped with a first dopant, an active layer disposed on the first semiconductor layer, a second dopant disposed on the active layer and doped with a second dopant having an opposite polarity to the first dopant, And a plurality of grooves formed on an upper surface of the second semiconductor layer, wherein the groove includes a center point which is a center of the groove and a boundary between the center point and a boundary between the plurality of grooves And the center point is positioned closer to the active layer than the boundary portion.

Here, the inner surface connecting the center point and the boundary portion may be formed with an upward slope with respect to the center point.

The angle formed between the inner surface of the active layer and the interface between the active layer and the second semiconductor layer may be 50 to 65 degrees.

The boundary portion may have a hexagonal structure when viewed from the top surface of the second semiconductor layer.

In addition, one side of one of the plurality of grooves may be in contact with one side of the boundary of the other grooves.

In addition, the center point of any one of the plurality of grooves may be the center of the center points of the other grooves surrounding the one groove.

In addition, the sides of the hexagon may be positioned adjacent to the active layer than the vertices of the hexagon.

In addition, the length of the sides of the hexagons may be 0.8 탆 to 3.5 탆.

The height of the side of the hexagons may be between 0.8 μm and 6.5 μm.

On the other hand, the respective center points may be located at the same height.

Further, six other center points surrounding the center point of any one of the center points may be disposed, and the other six center points may be separated from each other by the same distance as the center point.

According to the embodiment, when a plurality of grooves having the same shape as the embodiment are formed on the upper surface of the second semiconductor layer, light generated from the active layer can be prevented from being totally reflected from the upper surface of the second semiconductor layer to be reabsorbed or scattered Therefore, the light extraction efficiency of the light emitting device can be improved.

Further, since the groove is formed concavely in a concave shape centering on the center point, the light extraction efficiency can be improved more than the concave shape.

Further, since the grooves are arranged with a predetermined rule, the total reflection of light in a predetermined wavelength range can be effectively blocked.

1 is a plan view showing a light emitting device according to an embodiment of the present invention,
FIG. 2 is a cross-sectional view taken along a line I-I of the light emitting device of FIG. 1,
FIG. 3 is an enlarged plan view of a part of the light emitting device of FIG. 1,
4 is a perspective view of a top surface of the light emitting device of FIG. 3,
5 is a partial cross-sectional view taken along a line II-II of the light emitting device of FIG. 3,
FIG. 6 is a graph showing the comparison data comparing the light extraction efficiency of the embodiment with the comparative example,
7 is a view showing the light extraction efficiency according to the angle of the groove in the embodiment,
8 is a sectional view of a light emitting device package including the light emitting device according to the embodiment,
9 is an exploded perspective view of a display device including a light emitting device according to an embodiment.
10 is a cross-sectional view of the display device of Fig.
11 is an exploded perspective view of a lighting device including a light emitting device according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

FIG. 1 is a plan view of a light emitting device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along a line I-I of FIG. 1, FIG. 4 is a perspective view of the upper surface of the light emitting device of FIG. 3, and FIG. 5 is a partial cross-sectional view of the light emitting device of FIG. 3 along the line II-II.

1 and 2, a light emitting device 200 according to an embodiment includes a support member 210, a first electrode layer 215 disposed on the support member 210, a first electrode layer 215 disposed on the first electrode layer 215, A first semiconductor layer 250 and an active layer 230 on the first semiconductor layer 250 and a second semiconductor layer 220 and a second electrode 282 on the active layer 230.

The first semiconductor layer 250, the active layer 230, and the second semiconductor layer 220 are collectively referred to as a light emitting structure 260.

The support member 210 may be formed using a material having a high thermal conductivity, or may be formed of a conductive material. The support member 210 may be formed using a metal material or a conductive ceramic. The support member 210 may be formed as a single layer, and may be formed as a double structure or a multiple structure.

That is, the support member 210 may be formed of any one selected from a metal, for example, Au, Ni, W, Mo, Cu, Al, Ta, Ag, Pt, and Cr, or may be formed of two or more alloys. The above materials can be laminated. In addition, the support member 210 may be implemented with a carrier wafer such as Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, Ga 2 O 3.

Such a support member 210 facilitates the release of heat generated in the light emitting device 200, thereby improving the thermal stability of the light emitting device 200.

A first electrode layer 215 may be formed on the support member 210. The first electrode layer 215 may include an ohmic layer (not shown), a reflective layer (not shown) and a bonding layer (not shown).

For example, the first electrode layer 215 may be a structure of an ohmic layer / a reflection layer / a bonding layer, a laminate structure of an ohmic / reflective layer, or a structure of a reflection layer (including ohmic) / bonding layer. For example, the first electrode layer 215 may be formed by sequentially stacking a reflective layer and an ohmic layer on an insulating layer.

A reflective layer (not shown) may be disposed between an ohmic layer (not shown) and an insulating layer (not shown).

The reflective layer may be formed of a material having excellent reflective properties, for example, a material consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or the like.

Further, the reflective layer (not shown) can be laminated with IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni and the like.

When a reflective layer (not shown) is formed of a material that makes an ohmic contact with the light emitting structure 260 (for example, the first semiconductor layer 250), an ohmic layer (not shown) may not be formed separately, I do not.

The ohmic layer (not shown) is in ohmic contact with the lower surface (e.g., the first semiconductor layer 250) of the light emitting structure 260 and may be formed in a layer or a plurality of patterns.

The ohmic layer (not shown) may be formed of a transparent electrode layer and a metal. For example, ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide) ), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO _x , RuO _x , RuO _x / Ni, Ag, Ni / IrO _x / Au, and Ni / IrO _x / Au / ITO.

The ohmic layer (not shown) is for facilitating the injection of carriers into the first semiconductor layer 250, and is not necessarily formed.

The first electrode layer 215 may include a bonding layer (not shown), wherein the bonding layer (not shown) may include a barrier metal or a bonding metal such as Ti, Au, Sn, Ni , Cr, Ga, In, Bi, Cu, Ag, or Ta.

The light emitting structure 260 may include at least a first semiconductor layer 250, an active layer 230 and a second semiconductor layer 220 and may be formed between the first semiconductor layer 250 and the second semiconductor layer 220 And the active layer 230 may be disposed.

The first electrode layer 215 is electrically connected to the first semiconductor layer 250.

The first semiconductor layer 250 may be formed on the first electrode layer 215.

The first semiconductor layer 250 may be a p-type semiconductor layer doped with a p-type dopant. The p-type semiconductor layer is a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? x? 1, 0? y? 1, 0? x + y? 1), for example, GaN, AlN, AlGaN InGaN, InN, InAlGaN, AlInN and the like, and a p-type dopant such as Mg, Zn, Ca, Sr, and Ba can be doped.

 The active layer 230 may be formed on the first semiconductor layer 250. The active layer 230 may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of Group 3-V group elements.

When the active layer 230 is formed of a quantum well structure, for example, a well layer having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1) And a barrier layer having a composition formula of In _a Al _b Ga _1-ab N (0? A? ₁ , 0? B? ₁ , 0? A + b? 1). The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

The active layer 230 may have a structure in which a barrier layer and a well layer are alternately stacked.

A conductive clad layer (not shown) may be formed on and / or below the active layer 230. The conductive clad layer (not shown) may be formed of an AlGaN-based semiconductor and may have a band gap larger than that of the active layer 230.

A second semiconductor layer 220 may be formed on the active layer 230.

The second semiconductor layer 220 may be formed of an n-type semiconductor layer, and the n-type semiconductor layer may be, for example, In _x Al _y Ga _1-xy N (0? X? 1, 0? Y? for example, Si, Ge, Sn, Se, Te, or the like can be selected from a semiconductor material having a composition formula of Si, Ge, Sn, Type dopant can be doped.

A second electrode 282 electrically connected to the second semiconductor layer 220 may be formed on the second semiconductor layer 220. The second electrode 282 may include at least one pad or / . ≪ / RTI > The second electrode 282 may be disposed in a center region, an outer region, or an edge region of the upper surface of the second semiconductor layer 220, but the present invention is not limited thereto. The second electrode 282 may be disposed in a region other than the upper portion of the second semiconductor layer 220, but the present invention is not limited thereto.

An electron blocking layer 255 may be formed between the active layer 230 and the first semiconductor layer 250. The electron blocking layer may be formed by injecting the active layer 230 from the second semiconductor layer 220 into the active layer 230, Electrons in the active layer 230 can be prevented from flowing to the first semiconductor layer 250 without being recombined.

The electron blocking layer 255 has a band gap relatively larger than that of the active layer 230 so that electrons injected from the second semiconductor layer 220 are injected into the first semiconductor layer 250 without being recombined in the active layer 230. [ Can be prevented. Accordingly, the probability of recombination of electrons and holes in the active layer 240 can be increased and leakage current can be prevented.

Meanwhile, the electron blocking layer 255 may have a bandgap larger than the bandgap of the barrier layer included in the active layer 230, and may be formed of a semiconductor layer containing Al, such as p-type AlGaN, Not.

The leakage current blocking layer 240 may be disposed between the second semiconductor layer 220 and the active layer 230.

The leakage current blocking layer 240 may include a plurality of first layers including compressive stress including AlGaN and a plurality of second layers including tensile stress including GaN alternately May be stacked.

However, the number of the first layer and the second layer is not limited thereto and may have various numbers.

In the case of using a Si substrate, there is a disadvantage that it is difficult to grow an epitaxial layer due to cracks due to a large lattice constant and thermal expansion coefficient difference with the second semiconductor layer 220 (gallium nitride (GaN)). In addition, if the thickness of the second semiconductor layer 220 is increased, the tensile stress in the thin film gradually increases and becomes greater than the critical thickness, which causes defects and adversely affects the reverse current characteristics in particular. In particular, when a defect is generated in a portion of the second semiconductor layer 220 adjacent to the active layer 230, the active layer 230 is connected to the light emitting active layer 230, and the microfine defect of the active layer also causes a poor reverse current characteristic.

Therefore, the embodiment can prevent defects of the active layer 230 through the first layer having compressive stress and the second layer having tensile stress, and has an effect of improving the reverse current (Vr) characteristic.

 The second electrode 282 may be formed of a conductive material such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, , Mo, Nb, Al, Ni, Cu, and WTi.

The passivation 290 may be formed on the side and upper regions of the light emitting structure 260 and the passivation 290 may be formed of an insulating material.

Referring to FIGS. 2 to 5, a light extracting structure may be formed on the light emitting structure 260.

In detail, a plurality of grooves 300 may be formed on the upper surface of the second semiconductor layer 220 to prevent total reflection of light generated in the active layer 230 to improve light extraction efficiency.

The directions mentioned below are based on the cross section (FIG. 2) of the light emitting element 200 unless otherwise specified.

The plurality of grooves 300 may be formed on the upper surface of the second semiconductor layer 220 or may be formed on the upper portion of the light-transmitting electrode layer (not shown) after forming a transparent electrode layer (not shown) But not limited to,

The plurality of grooves 300 may be formed in a part or all of the upper surface of the second semiconductor layer 220.

For example, the groove 300 includes a center point 310 that is the center of the groove 300, and a boundary 320 that forms a boundary between the plurality of grooves 300 and surrounds the center point 310 can do.

The center point 310 may be positioned adjacent to the active layer 230 than the boundary 320. Specifically, the center point 310 may be located below the boundary 320 (reference in FIG. 2).

Here, the center point 310 does not mean a point in a mathematical sense.

In addition, the center points 310 of each of the plurality of grooves 300 may be located at the same height from each other.

Specifically, imaginary lines connecting the center points 310 may be arranged parallel to the interface between the active layer 230 and the second semiconductor layer 220.

Referring to FIG. 3, the boundary 320 may mean a boundary region between the grooves 300.

Specifically, when viewed from the top surface of the light emitting device 200, the boundary portion 320 may form a closed space surrounding the center point 310.

The boundary portion 320 may include a surface or a line having a predetermined area as a boundary region between the grooves 300. [

More specifically, the boundary portion 320 may have a hexagonal structure as viewed from the upper surface of the second semiconductor layer. More preferably, the boundary 320 may have a regular hexagonal structure.

The length of one side 321 of the hexagon of the boundary 320 may be 0.8 mu m to 3.5 mu m.

When the length of one side 321 of the hexagonal part of the boundary part 320 is less than 0.8 탆, it is difficult to form it by a method such as etching and the length of one side 321 of the hexagonal part of the boundary part 320 is larger than 3.5 탆 This is because the light extraction efficiency is reduced.

One side 321 of one of the plurality of grooves 300 may be in contact with one side 321 of the boundary 320 of the other groove 300. That is, as shown in FIG. 3, it may have a honeycomb structure.

The height of the hexagonal side 321 of the boundary 320 may be (h) 0.8 μm to 6.5 μm. Here, the height h of the side 321 means the height at the center point 310.

When the height h of the side 321 is less than 0.8 탆, the light extraction efficiency may be lowered. When the height h of the side 321 is higher than 6.5 탆, damage to the semiconductor layer is increased, The quality of the device 200 may be deteriorated.

Since the center point 310 is located below the boundary portion 320, the cross-sectional shape of the groove 300 has a concave shape of the center point 310, as shown in FIG.

The inner surface 330 may be formed to be inclined upward with respect to the center point 310 when the surface connecting the center point 310 and the boundary portion 320 is defined as the inner surface 330. [

Of course, the inner surface 330 may have a straight or curved cross-sectional shape. But is not limited thereto.

The angle? Between the inner surface 330 and the interface between the active layer 230 and the second semiconductor layer 220 may be between 50 and 65 degrees. If the angle of the inner surface 330 is smaller than 50 degrees, the light extraction efficiency may be lowered. If the angle of the inner surface 330 is larger than 50 degrees, the quality of the semiconductor layer may deteriorate.

The overall shape of the plurality of grooves 300 may be in the form of hexagonal horns, in which the apexes of the horns are arranged in a downward direction.

The hexagonal sides 321 of the boundary 320 may be located adjacent to the active layer 230 rather than the hexagonal vertex 322 as shown in FIG.

More specifically, it may have a shape in which the hexagonal vertex 322 is the highest point and the hexagonal edge 321 is lowered.

In addition, the plurality of grooves 300 may be regularly arranged.

Specifically, six other center points 310 surrounding one of the center points 310 of the center points 310 are disposed, and the other six center points 310 are spaced apart by the same distance as any one of the center points 310 Can be,

That is, six center points 310 may be located in any circle-shaped orbit centered on any one center point 310.

The method of forming the plurality of grooves 300 may be formed by performing etching on at least one region of the upper surface of the second semiconductor layer 220, but is not limited thereto.

The etch process may include wet and / or dry etch processes.

Preferably, the groove 300 may be formed by a dry etching process using a photomask.

Light generated from the active layer 230 is totally reflected from the upper surface of the second semiconductor layer 220 and is reabsorbed when a plurality of grooves 300 having the same shape as the embodiment are formed on the upper surface of the second semiconductor layer 220. [ Or scattering of the light emitted from the light emitting element 200 can be prevented.

In addition, since the groove 300 is formed in a concave shape with a concave shape around the center point 310, the light extraction efficiency can be improved more than the concave shape. This will be described later.

In addition, since the grooves 300 are arranged with a predetermined rule, total reflection of light in a predetermined wavelength range can be effectively blocked.

6 is comparative data comparing the light extraction efficiency of the embodiment with the comparative example.

6 is a graph comparing the light extraction efficiency of the comparative example in which the concave groove 300 is formed on the top surface of the second semiconductor layer 220 and the light extracting structure of the same size is formed in the same area. Data.

Concave grooved grooves 300 show superior light extraction efficiency than the convex type light extraction structure.

FIG. 7 is a diagram showing the light extraction efficiency according to the angle of the groove 300 of the embodiment.

Referring to FIG. 7, it can be seen that the light extraction efficiency is maximized when the angle of the inner surface 330 of the groove 300 is between 50 and 65 degrees.

8 is a cross-sectional view illustrating a light emitting device package including the light emitting device according to the embodiment.

8, the light emitting device package 300 according to the embodiment includes a body 310 having a cavity, a light source 320 mounted on the cavity of the body 310, and an encapsulant 350 filled in the cavity 310 can do.

The body 310 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), photo sensitive glass (PSG), polyamide 9T (SPS), a metal material, sapphire (Al2O3), beryllium oxide (BeO), a printed circuit board (PCB), and ceramics. The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The light source unit 320 may be mounted on the bottom surface of the body 310. For example, the light source unit 320 may be any one of the light emitting devices illustrated in FIGS. The light emitting device may be, for example, a colored light emitting device that emits light such as red, green, blue, or white, or a UV (Ultra Violet) light emitting device that emits ultraviolet light. In addition, one or more light emitting elements can be mounted.

The body 310 may include a first electrode 330 and a second electrode 340. The first electrode 330 and the second electrode 340 may be electrically connected to the light source 320 to supply power to the light source 320.

In addition, the first electrode 330 and the second electrode 340 are electrically separated from each other. The first electrode 330 and the second electrode 340 can reflect the light generated from the light source unit 320 to increase the light efficiency. Further, To the outside.

8 illustrates that both the first electrode 330 and the second electrode 340 are bonded to the light source 320 by the wire 360. However, the present invention is not limited thereto, Any one of the electrode 330 and the second electrode 340 may be bonded to the light source 320 by the wire 360 and may be electrically connected to the light source 320 without the wire 360 by the flip- have.

The first electrode 330 and the second electrode 340 may be formed of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum Ta, Pt, Sn, Ag, P, Al, Pd, Co, Si, Ge, Ge), hafnium (Hf), ruthenium (Ru), and iron (Fe). The first electrode 330 and the second electrode 340 may have a single-layer structure or a multi-layer structure, but the present invention is not limited thereto.

The encapsulant 350 may be filled in the cavity and may include a phosphor (not shown). The encapsulant 350 may be formed of a transparent silicone, epoxy, or other resin material, and may be formed in such a manner that the encapsulant 350 is filled in the cavity and then cured by UV or thermal curing.

The phosphor (not shown) may be selected according to the wavelength of the light emitted from the light source unit 320 so that the light emitting device package 300 may emit white light.

The fluorescent material (not shown) included in the encapsulant 350 may be a blue light emitting phosphor, a blue light emitting fluorescent material, a green light emitting fluorescent material, a yellow green light emitting fluorescent material, a yellow light emitting fluorescent material, , An orange light-emitting fluorescent substance, and a red light-emitting fluorescent substance may be applied.

That is, the phosphor (not shown) may be excited by the light having the first light emitted from the light source 320 to generate the second light. For example, when the light source 320 is a blue light emitting diode and the phosphor (not shown) is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light emitted from the blue light emitting diode and blue The light emitting device package 300 can provide white light as yellow light generated by excitation by light is mixed.

The light emitting device according to the embodiment can be applied to a lighting device. The lighting system includes a structure in which a plurality of light emitting elements are arrayed and includes a display device shown in Figs. 9 and 10, a lighting device shown in Fig. 11, and may include a lighting lamp, a traffic light, a vehicle headlight, have.

9 is an exploded perspective view of a display device having a light emitting device according to an embodiment.

9, a display device 1000 according to an exemplary embodiment of the present invention includes a light guide plate 1041, a light source module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041 and a display panel 1061 on the optical sheet 1051 and the light guide plate 1041 and the light source module 1031 and the reflection member 1022 But is not limited to, a bottom cover 1011.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 may be made of a transparent material, for example, acrylic resin such as polymethylmethacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphtha late Resin. ≪ / RTI >

The light source module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

The light source module 1031 includes at least one light source module 1031 and may directly or indirectly provide light from one side of the light guide plate 1041. The light source module 1031 includes a substrate 1033 and a light emitting device 1035 according to the embodiment described above and the light emitting devices 1035 may be arrayed at a predetermined interval on the substrate 1033 .

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like. When the light emitting element 1035 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 can be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting devices 1035 may be mounted on the substrate 1033 such that the light emitting surface is spaced apart from the light guiding plate 1041 by a predetermined distance. However, the present invention is not limited thereto. The light emitting device 1035 may directly or indirectly provide light to the light-incident portion, which is one surface of the light guide plate 1041, but the present invention is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light source module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light source module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the invention is not limited thereto.

10 is a view showing a display device having a light emitting element according to an embodiment.

10, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the above-described light emitting device 1124 is arrayed, an optical member 1154, and a display panel 1155.

The substrate 1120 and the light emitting device 1124 may be defined as a light source module 1160. The bottom cover 1152, the at least one light source module 1160, and the optical member 1154 may be defined as a light unit 1150. The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto. The light source module 1160 includes a substrate 1120 and a plurality of light emitting devices 1124 arranged on the substrate 1120.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a polymethyl methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light source module 1160 and performs surface light source, diffusion, and light condensation of light emitted from the light source module 1160.

11 is an exploded perspective view of a lighting device having a light emitting device according to an embodiment.

11, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800 . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device according to an embodiment of the present invention.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light emitting device 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 into which the plurality of light emitting elements 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light emitting device 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 may have a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide unit 2630, a base 2650, and a protrusion 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The protrusion 2670 has a shape protruding outward from the other side of the base 2650. The protrusion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the protrusion 2670 may be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the protrusion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800.

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (19)

A first semiconductor layer doped with a first dopant;
An active layer disposed on the first semiconductor layer;
A second semiconductor layer disposed on the active layer and doped with a second dopant having an opposite polarity to the first dopant; And
And a plurality of grooves formed on the upper surface of the second semiconductor layer,
In the groove,
A center point serving as a center of the groove,
And a boundary surrounding the center point and defining a boundary between the plurality of grooves,
And the center point is located closer to the active layer than the boundary portion. The method according to claim 1,
Wherein an inner surface connecting the center point and the boundary portion is formed to be upward sloped with respect to a center point. 3. The method of claim 2,
And an angle formed between the inner surface and the interface between the active layer and the second semiconductor layer is between 50 degrees and 65 degrees. The method of claim 3,
The boundary portion
And a hexagonal structure as viewed from an upper surface of the second semiconductor layer. 5. The method of claim 4,
And one side of one of the plurality of grooves is in contact with one side of the boundary of the other groove. 6. The method of claim 5,
Wherein a center point of one of the plurality of grooves is a center of the center points of other grooves surrounding the one groove. 5. The method of claim 4,
And the sides of the hexagon are positioned adjacent to each other in the active layer than the vertex of the hexagon. 8. The method of claim 7,
And the sides of the hexagons have a length of 0.8 mu m to 3.5 mu m. 9. The method of claim 8,
And the side of the hexagonal portion has a height of 0.8 to 6.5 占 퐉. The method according to claim 1,
And each of the center points is located at the same height as each other. 11. The method of claim 10,
Six other center points surrounding the center point of any one of the center points are disposed,
And the other six center points are spaced apart from each other by the same distance as the center point. The method according to claim 1,
A first electrode electrically connected to the first semiconductor layer under the first semiconductor layer;
And a second electrode electrically connected to the second semiconductor layer. 10. The method of claim 9,
And a support member located below the first electrode. 10. The method of claim 9,
And a passivation arranged to surround at least sides of the first semiconductor layer, the active layer, and the second semiconductor layer. 14. The method of claim 13,
Wherein the first semiconductor layer is doped with a p-type dopant, and the second semiconductor layer is doped with an n-type dopant. 14. The method of claim 13,
Wherein,
And a barrier layer having a well layer and a band gap energy higher than that of the well layer are alternately arranged. A light emitting device package comprising the light emitting device according to any one of claims 1 to 16. A lighting device comprising the light-emitting element according to any one of claims 1 to 16. A display device comprising the light-emitting element according to any one of claims 1 to 16.

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