KR20150055507A - Solar cell and solar cell module - Google Patents

Abstract

The present invention relates to a solar cell and a solar cell module. According to an embodiment of the present invention, the solar cell includes: a semiconductor substrate; an emitter unit formed on the semiconductor substrate; a first electrode formed on the rear surface of the semiconductor substrate and is connected to the emitter; and a second electrode which is formed on the rear surface of the semiconductor substrate while being spaced apart the first electrode in parallel and is connected to the semiconductor substrate. A shunt prevention layer is formed with an insulating material in an area on the rear surface of the first and second electrodes which is adjacent to the connection area of an interconnector connecting the adjacent solar cells. According to another embodiment of the present invention, the solar cell includes: a semiconductor substrate; an emitter; multiple first electrodes; multiple second electrodes; and an insulating member including first auxiliary electrodes connected to the first electrodes and second auxiliary electrodes connected to the second electrodes. The insulating member and the semiconductor substrate are individually connected to form a single integrated device. A shunt prevention layer is formed adjacent to the connection area of an interconnector connecting the adjacent solar cells. Also, according to another embodiment of the present invention, a solar cell module includes: first and second solar cells having the aforementioned structures; and the interconnector electrically connecting the first and second solar cells.

Description

SOLAR CELL AND SOLAR CELL MODULE [0002]

The present invention relates to a solar cell and a solar cell module.

A typical solar cell has a substrate made of different conductivity type semiconductors, such as p-type and n-type, an emitter, and an electrode connected to the substrate and the emitter, respectively. At this time, a p-n junction is formed at the interface between the substrate and the emitter.

Particularly, research and development on a back electrode type solar cell having an n-electrode and a p-electrode formed only on the back surface of a silicon substrate without forming an electrode on the light receiving surface of a silicon substrate for increasing the efficiency of the solar cell is underway. A modularization technique of connecting a plurality of such back electrode type solar cell cells and electrically connecting them is also under way.

 As a module and a technique, a method of electrically connecting a plurality of solar cells with a metal interconnection, and a method of electrically connecting a plurality of solar cells using a wiring board on which wiring is previously formed are typical.

An object of the present invention is to provide a solar cell and a solar cell module capable of improving the photoelectric conversion efficiency and further improving the process yield.

An example of a solar cell according to the present invention includes a semiconductor substrate; An emitter section formed on the semiconductor substrate; A first electrode formed on a rear surface of the semiconductor substrate and connected to the emitter; And a second electrode formed on the rear surface of the semiconductor substrate so as to be spaced apart from the first electrode and connected to the semiconductor substrate. The first electrode and the second electrode are connected to each other, A shunt prevention layer made of an insulating material is further formed around the portion to which the connector is connected.

Here, the shunt prevention layer may be formed on at least one portion of the periphery of the portion where the interconnector contacts the first electrode and the second electrode.

For example, the shunt prevention layer is formed between (1) a portion of the rear surface of the first electrode, between the portion to which the interconnector is connected and the end of the semiconductor substrate or the rear surface of the second electrode, (2) between the portion connected to the interconnector and the first electrode, or between the portion connected to the interconnector and the second electrode.

More specifically, the first electrode includes a plurality of first finger electrodes spaced apart from each other on the rear surface of the semiconductor substrate, a first electrode having one side commonly connected to the plurality of first finger electrodes, A plurality of second finger electrodes formed on the rear surface of the semiconductor substrate so as to be spaced apart from each other, and a plurality of first finger electrodes formed on the first substrate, the first finger electrodes being commonly connected to the plurality of second finger electrodes, And a two-electrode pad.

In this case, the shunt prevention layer may be formed on the first electrode pad and the second electrode pad in a portion adjacent to the end of the semiconductor substrate, and (2) the shunt prevention layer may be formed on the first electrode pad, The second finger electrode may be formed at a portion adjacent to the second finger electrode and may be formed at a portion adjacent to the plurality of first finger electrodes in the second electrode pad.

Further, an example of a solar cell module according to the present invention is a solar cell module comprising: a first solar cell and a second solar cell having the structure of the solar cell described above; And an interconnect connector electrically connecting the first solar cell and the second solar cell to each other.

Here, the shunt barrier layer provided in the first solar cell and the shunt barrier layer provided in the second solar cell may be independently provided in the respective solar cells, and may be spaced apart from each other.

Here, the interconnector is connected to the first electrode of the first solar cell and the second electrode of the second solar cell by an interconnecting connector made of an electrically conductive material, and in each of the first solar cell and the second solar cell, May be located outside of each solar cell relative to the location of the interconnector connector.

Another example of the solar cell according to the present invention includes a semiconductor substrate; An emitter section formed on the semiconductor substrate; A plurality of first electrodes formed on a rear surface of the semiconductor substrate and connected to the emitter; A plurality of second electrodes formed on a rear surface of the semiconductor substrate so as to be spaced apart from the first electrodes and connected to the semiconductor substrate; And an insulating member including a first auxiliary electrode connected to the plurality of first electrodes and a second auxiliary electrode connected to the plurality of second electrodes, wherein the insulating member and the semiconductor substrate are connected to each other, And a shunt prevention layer made of an insulating material is further formed in the periphery of the portion to which the interconnecting interconnecting solar cells are connected.

Here, the first auxiliary electrode and the second auxiliary electrode extend apart from each other in the first direction, and the first auxiliary electrode includes a first electrode extending in the first direction and a second electrode extending in the second direction crossing the first direction, The second auxiliary electrode may further include a second auxiliary electrode pad extending in a second direction at an end extending in the first direction.

In this case, the shunt prevention layer may be formed between the second auxiliary electrode pad and the first auxiliary electrode, and between the second auxiliary electrode pad and the first electrode.

In addition, the plurality of first electrodes and the first auxiliary electrode, and the plurality of second electrodes and the second auxiliary electrode may be electrically connected to each other by a conductive electrode connector.

In addition, an insulating layer may be formed between the plurality of first electrodes and the second electrode, and between the plurality of first auxiliary electrodes and the second auxiliary electrode.

At this time, the material of the shunt prevention layer may be the same as or different from that of the insulating layer.

Further, an example of a solar cell module according to the present invention is a solar cell module comprising: a first solar cell and a second solar cell having the structure of the solar cell described above; And an interconnect connector electrically connecting the first solar cell and the second solar cell to each other.

Here, the solar cell module includes a front glass substrate positioned above a front surface of a cell string, to which the first solar cell and the second solar cell are connected by the interconnector; An upper encapsulant positioned between the front glass substrate and the cell string; A lower encapsulant located on the back side of the cell string; And a back sheet positioned on a rear surface of the lower encapsulant.

Here, the shunt barrier layer provided in the first solar cell and the shunt barrier layer provided in the second solar cell may be independently provided in the respective solar cells, and may be spaced apart from each other.

As described above, the solar cell according to the present invention can prevent the short-circuit between the interconnector and the semiconductor substrate or the undesired electrode by forming the insulating shunt prevention layer around the portion to which the interconnector is connected.

In addition, by using the solar cell having such a shunt prevention layer, the yield in the solar cell module manufacturing process can be further improved.

1 is an example of a partial perspective view of a solar cell according to an example of the present invention.
FIG. 2 is a cross-sectional view of the solar cell shown in FIG. 1 cut along line 3-3.
FIGS. 3A to 3C are views for explaining various examples of the shunt prevention layer in the solar cell structure according to the present invention shown in FIGS. 1 and 2.
4 (a) is a rear view of the semiconductor substrate in a state where the shunt prevention layer is formed in each solar cell, and FIG. 4 (b) 4 (b). Fig.
5 and 6 are views for explaining various examples of the shunt prevention layer when a plurality of first electrode pads or second electrode pads are provided in the solar cell structure according to the present invention.
FIG. 7 illustrates an example in which a solar cell having a plurality of first electrode pads and a plurality of second electrode pads are interconnected by an interconnector.
8 is a view for explaining an example of a solar cell module to which a solar cell having a shunt prevention layer according to the present invention is applied.
9 is another example of a perspective view of a solar cell according to an example of the present invention.
10 is a cross-sectional view of the solar cell shown in FIG. 9 along line 10-10.
FIG. 11 is a view for explaining an example of a semiconductor substrate, an insulating member and a shunt prevention layer to be individually connected to each other in the solar cell shown in FIGS. 9 and 10. FIG.
12 is a view for explaining the position of the shunt prevention layer in a state where the semiconductor substrate 110 and the insulating member shown in Fig. 11 are connected to each other.
FIG. 13A is a cross-sectional view taken along line 13A-13A in FIG. 12, FIG. 13B is a cross-sectional view taken along line 13B-13B in FIG. 12, and FIG. 13C is a cross-sectional view taken along line 12C-13C.
14 illustrates an example of a solar cell module to which a solar cell formed by a single element and a semiconductor substrate and an insulating member are integrally connected.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention in the drawings, portions not related to the description are omitted, and like reference numerals are given to similar portions throughout the specification.

Hereinafter, the front surface may be a surface of a semiconductor substrate or a front surface of a front glass substrate to which direct light is incident, and the rear surface may be a surface of a semiconductor substrate on which direct light is not incident, The opposite side of one side of the first side.

Hereinafter, a solar cell and a solar cell module according to an embodiment of the present invention will be described with reference to the accompanying drawings.

1 and 2 are views for explaining an example of a solar cell according to the present invention.

FIG. 1 is an example of a partial perspective view of a solar cell according to an example of the present invention, and FIG. 2 is a sectional view cut along the line 2-2 of the solar cell shown in FIG.

1 and 2, an example of a solar cell according to the present invention includes a semiconductor substrate 110, an antireflection film 130, an emitter 121, a back surface field (BSF) 172, And may include a first electrode C141 and a second electrode C142.

The antireflection film 130 and the backside electrical conductor 172 may be omitted and may be disposed between the antireflection film 130 and the semiconductor substrate 110 on which the light is incident, (Not shown), which is an impurity portion containing impurities of a higher concentration than that of the semiconductor substrate 110, may be further included.

Hereinafter, as shown in FIGS. 1 and 2, an anti-reflection film 130 and a rear electric conductor 172 are included.

The semiconductor substrate 110 may be a semiconductor substrate 110 of a first conductivity type, for example, n-type conductivity type silicon. The semiconductor substrate 110 may be formed by doping a first conductivity type impurity into a wafer formed of a silicon material.

The upper surface of the semiconductor substrate 110 is textured to have a textured surface that is an uneven surface. The antireflection film 130 is disposed on the upper surface of the semiconductor substrate 110. The antireflection film 130 may be a single layer or a plurality of layers and may be formed of a hydrogenated silicon nitride film (SiNx: H) or the like. In addition, it is also possible that a front electric part or the like is further formed on the entire surface of the semiconductor substrate 110.

The emitter portions 121 are spaced apart from each other in the rear surface of the semiconductor substrate 110 facing the front surface, and extend in a direction parallel to each other. The plurality of emitter portions 121 may be a second conductive type which is opposite to the conductive type of the semiconductor substrate 110.

The plurality of emitter portions 121 may be formed by doping a p-type impurity of a second conductivity type opposite to the conductivity type of the crystalline silicon semiconductor substrate 110 at a high concentration through a diffusion process.

The plurality of emitter portions 121 may be disposed in the same direction as the plurality of emitter portions 121. The plurality of emitter portions 121 may be spaced apart from each other in a direction parallel to the emitter portions 121, have. Therefore, as shown in FIGS. 1 and 2, a plurality of emitter portions 121 and a plurality of rear electric sections 172 are alternately arranged on the rear surface of the semiconductor substrate 110.

The plurality of rear electric fields 172 are impurities, for example, n ++ parts, which contain impurities of the same conductivity type as that of the semiconductor substrate 110 at a higher concentration than the semiconductor substrate 110. The plurality of rear electric field sections 172 may be formed by doping impurity (n ++) of the same conductivity type as that of the crystalline silicon semiconductor substrate 110 through a diffusion process at a high concentration.

The first electrode C141 is physically and electrically connected to the emitter section 121 and extends along the emitter section 121, respectively.

The first electrode C141 may include a plurality of first finger electrodes (not shown) and a first electrode pad (not shown). A detailed description thereof will be described later with reference to FIG. 3A.

The plurality of second electrodes C142 are physically and electrically connected to the semiconductor substrate 110 through the rear electric section 172 and extend along the plurality of rear electric sections 172, respectively.

Here, on the rear surface of the semiconductor substrate 110, the first electrode C141 and the second electrode C142 are physically separated from each other and electrically isolated.

The second electrode C142 may include a plurality of second finger electrodes (not shown) and a second electrode pad (not shown). A detailed description thereof will be described later with reference to FIG. 3A.

The first electrode C141 formed on the emitter section 121 collects charges, for example, holes, which have migrated toward the emitter section 121, and the second electrode C141 formed on the rear electric section 172 C142 may collect electrons, e. G., Electrons, that have migrated toward the backside electrical portion 172. [

The holes collected through the first electrode (C141) and the electrons collected through the second electrode (C142) in the solar cell according to the present invention manufactured using the above structure are used as electric power of the external device through the external circuit device .

The operation of the solar cell with the rear-bonding structure is as follows.

When a light is irradiated to the solar cell and is incident on the semiconductor substrate 110 through the antireflection film 130, electron-hole pairs are generated in the semiconductor substrate 110 due to light energy.

These electron-hole pairs are separated from each other by the pn junction of the semiconductor substrate 110 and the emitter section 121, and the holes move toward the plurality of emitter sections 121 having the p-type conductivity type, And are collected by the first electrode (C141) and the second electrode (C142), respectively. When the first electrode (C141) and the second electrode (C142) are connected to each other by a conductor, a current flows and is used as electric power from the outside.

The case where the semiconductor substrate 110 is the single crystal silicon semiconductor substrate 110 and the emitter portion 121 and the back surface electric portion 172 are formed through the diffusion process has been described as an example.

Alternatively, the heterojunction solar cell in which the emitter layer 121 and the rear electric layer 172 formed of an amorphous silicon material are bonded to the crystalline semiconductor substrate 110, or the emitter layer 121 is formed on the front surface of the semiconductor substrate 110 And is connected to the first electrode C141 formed on the rear surface of the semiconductor substrate 110 through a plurality of via holes formed in the semiconductor substrate 110, the present invention can be similarly applied.

A solar cell having such a structure can interconnect solar cells adjacent to each other by an interconnector, and thus a plurality of solar cells can be connected in series.

In this structure, the solar cell according to the present invention has a shunt prevention layer (not shown) made of an insulating material around a portion of the rear surface of each of the first electrode C141 and the second electrode C142, Can be formed. More specifically, it is as follows.

FIGS. 3A to 3C are views for explaining various examples of the shunt prevention layer ASB in the solar cell structure according to the present invention shown in FIGS. 1 and 2.

3A is a view for explaining a first embodiment of the pattern of the first electrode C141 and the second electrode C142 and the shunt prevention layer ASB according to the present invention, (IC) connected to a cross section taken along the line 3a (b) -3a (b) in FIG. 3A.

3B is a view for explaining a second embodiment of the shunt prevention layer ASB according to the present invention, and FIG. 3B is a sectional view taken along the line 3b (b) - 3b (b) And an interconnector (IC) is connected to the cross section along the line.

FIG. 3C is a view for explaining a third embodiment of the shunt prevention layer ASB according to the present invention, and FIG. 3C is a sectional view taken along the line 3c (b) - 3c (b) And an interconnector (IC) is connected to the cross section along the line.

As shown in each of FIGS. 3A to 3C, the first electrode C141 disposed on the rear surface of the semiconductor substrate 110 in the solar cell according to the present invention shown in FIGS. 1 and 2 And may include a plurality of first finger electrodes C141F and a first electrode pad C141P.

Here, the plurality of first finger electrodes C141F may be spaced apart from each other along the plurality of emitter portions 121 on the rear surface of the semiconductor substrate 110. The first finger electrode C141F may also be formed along the first direction x when the plurality of emitter portions 121 are formed along the first direction x and the plurality of emitter portions 121 may be formed along the first direction x. When formed along the second direction y, the first finger electrode C141F may also be formed along the second direction y.

The first electrode pad C141P is formed at a rear end of the semiconductor substrate 110 in a second direction y intersecting with a plurality of first finger electrodes C141F and one end of the first electrode pad C141P is connected to a plurality of first electrodes C141, And the other end thereof may be connected to the interconnector (IC).

The second electrode C142 disposed on the rear surface of the semiconductor substrate 110 may include a plurality of second finger electrodes C142 and a second electrode pad C142P.

Here, the plurality of second finger electrodes C142 may be formed on the rear surface of the semiconductor substrate 110 along the plurality of rear electric fields 172. The second finger electrode C142 may be spaced apart from the first electrodes C141 and may be formed in the first direction x when the plurality of rear electric fields 172 are formed in the first direction x. The plurality of second finger electrodes C142 are spaced apart from the plurality of first electrodes C141 so as to be formed in the second direction y, .

The second electrode pad C142P is formed at a rear end of the semiconductor substrate 110 in a second direction y intersecting the plurality of second finger electrodes C142, And the other end thereof may be connected to the interconnector (IC).

As described above, the first electrode C141 of the solar cell according to the present invention includes a plurality of first finger electrodes C141F and a first electrode pad C141P, and the second electrode C142 includes a plurality of second fingers C141F, And may include an electrode C142 and a second electrode pad C142P.

Here, the width WP1 of the first electrode pad C141P and the width WP2 of the second electrode pad C142P may be very narrow to several millimeters (for example, 2 mm to 3 mm) The interval DPF1 between the second finger electrode C141P and the second finger electrode C142 and the interval DPF2 between the second electrode pad C142P and the first finger electrode C141F may be very narrow.

Here, the interconnector IC includes a first electrode pad C141P and a second electrode pad C142P, as shown in each of FIGS. 3A to 3C, for connecting adjacent solar cells. .

In this case, in order to improve the adhesive force and minimize the contact resistance, the inter-connector IC, the first electrode pad C141P, and the second electrode C141P are formed by using an ICA of a conductive material such as a solder, The pad C142P can be bonded.

However, during the process of connecting the interconnector (IC) to the solar cell, the width (WP1) of the first electrode pad (C141P) and the width of the second electrode pad (C142P) The interconnector IC and the semiconductor substrate 110 may be short-circuited beyond the width WP2.

In addition, when the interconnection IC and the first electrode pad C141P are connected, the first electrode pad C141P and the second finger electrode C142 may be short-circuited by the inter-connector connector ICA, The second electrode pad C142P and the first finger electrode C141F may be short-circuited by the inter-connector connector ICA when the first electrode pad IC and the second electrode pad C142P are connected unintentionally.

However, when the shunt prevention layer ASB of the insulating material is further formed around the portion of the rear surface of each of the first electrode C141 and the second electrode C142 to which the interconnector IC is connected as in the present invention, It is possible to prevent a short circuit problem that may occur in connection of the above-described inter connector (IC).

Such a shunt prevention layer ASB may be formed on at least one portion of the periphery of a portion to which the interconnector IC is connected to each of the first electrode C141 and the second electrode C142.

More specifically, the shunt prevention layer ASB is formed in the circumference of a portion overlapping the first electrode C141 and the second electrode C142 for the connection of the inter connector IC, (1) (IC) is connected between the portion of the rear surface to which the interconnector (IC) is connected and the end of the semiconductor substrate 110 or the rear surface of the second electrode C142 and the end of the semiconductor substrate 110 (2) between the portion to be connected to the interconnector (IC) and the first electrode (C141) or between the portion to be connected to the interconnector (IC) and the second electrode (C142) , Or on the rear surface of the semiconductor substrate 110 exposed in the space between the first electrode (C141) and the second electrode (C142). (3) The shunt prevention layer ASB may be connected to both ends of the shunt prevention layer ASB formed by the above-described cases (1) and (2).

This will be described in more detail as follows.

3A, the shunt prevention layer ASB is formed on the rear surface of each of the first electrode pad C141P and the second electrode pad C142P. In the case of (1), as shown in FIGS. 3A and 3B, May be formed to be elongated in the second direction y between a portion to which the inter connector IC is connected (that is, a portion where the inter-connector connector ICA is located) and an end of the semiconductor substrate 110. [ The thickness TASB of the shunt prevention layer ASB may be 5 占 퐉 to 15 占 퐉 and the width WASB of the shunt prevention layer ASB may be 100 占 퐉 to 500 占 퐉. (ASB) material may include oxide or polymer resin material.

Thus, as shown in FIG. 3A, the interconnector IC is connected to the first electrode pad C141P and the second electrode pad C142P by an interconnecting connector ICA of a conductive material The shunt prevention layer ASB can prevent the interconnection connector ICA from flowing out of each of the first electrode pad C141P and the second electrode pad C142P and shorting to the semiconductor substrate 110. Therefore, , The solar cell module to which such a solar cell is applied may be positioned so that the position of the shunt prevention layer ASB is closer to the outer side of the solar cell, that is, the end of the semiconductor substrate 110, than the position of the IC connector .

Next, in the case of the above-described (2), as shown in FIGS. 3B and 3B, the shunt prevention layer ASB is connected to the interconnector IC on the rear surface of the first electrode pad C141P May be formed on the rear surface of the semiconductor substrate 110 exposed between the first finger electrode C142 and the second finger electrode C142.

In addition, the shunt prevention layer ASB is formed on the rear surface of the second electrode pad C142P with a portion connecting with the interconnector IC (i.e., a portion where the inter connector connector ICA is located) and a plurality of first finger electrodes C141F On the rear surface of the semiconductor substrate 110.

The first electrode pad C141P and the second finger electrode C142 are short-circuited by the inter-connector connection member ICA during the process of connecting the inter-connector IC, and the second electrode pad C142P and the second electrode pad C142P are short- It is possible to prevent the one finger electrode C141F from being short-circuited.

3 (c), the shunt prevention layer ASB is formed of the first shunt prevention layer ASB1 formed in the second direction y in accordance with FIG. 3A, Formed in a first direction (x) so as to connect both ends of the two shunt prevention layers (ASB1, ASB2) to each other in addition to the second shunt prevention layer (ASB2) formed in the second direction (y) 3 shunt prevention layer ASB3.

As described above, when the shunt prevention layer ASB is formed in the periphery of the portion to which the interconnector IC is connected on the rear surface of the first electrode C141 and the second electrode C142, It is possible to prevent a short circuit by the inter-connector connector (ICA).

The cross section of the two solar cells connected with each other in the state where the shunt prevention layer ASB is formed is shown in FIG.

4 (a) is a rear view of the semiconductor substrate 110 in a state where the interconnector IC is connected in a state where the shunt prevention layer ASB is formed in each solar cell, and FIG. 4 (b) Sectional view taken along the line 4 (b) to 4 (b) of FIG.

4A and 4B, when the shunt prevention layer ASB is formed, the interconnect connector ICA may not spread beyond a limited space due to the shunt prevention layer ASB, It is possible to prevent a short circuit due to the connection member (ICA) and to further facilitate the tabbing process of connecting the interconnector (IC) to the solar cell, thereby further improving the process yield of the solar cell module.

The case where one first electrode pad C141P connected to the plurality of first finger electrodes C141F and one second electrode pad C142P connected to the plurality of second finger electrodes C142 is one example The shunt prevention layer ASB may be formed in the same manner even when a plurality of first electrode pads C141P and second electrode pads C142P are provided.

5 and 6 are views for explaining various examples of the shunt prevention layer ASB when a plurality of first electrode pads C141P and second electrode pads C142P are provided in the solar cell structure according to the present invention.

As shown in FIG. 5, the solar cell according to the present invention may have a plurality of first electrode pads C141P and second electrode pads C142P.

Specifically, the first electrode pad C141P and the second electrode pad C142P are electrically connected to the first finger electrode C141F and the second finger electrode C142 in the second direction crossing the first finger electrodes C141F and the second finger electrodes C142 at the rear surface of the semiconductor substrate 110. [ (y).

At this time, a plurality of first finger electrodes C141F and second finger electrodes C142 may be connected to the plurality of first electrode pads C141P and the second electrode pads C142P, respectively.

In this case also, the shunt prevention layer ASB is formed on the rear surface of each of the plurality of first electrode pads C141P and the second electrode pad C142P in a second direction y at a portion adjacent to the end of the semiconductor substrate 110, As shown in FIG.

6, the shunt prevention layer ASB includes a plurality of first electrode pads C141P and second electrode pads C142P in addition to the first shunt prevention layer ASBa according to FIG. 5, And a second shunt prevention layer ASBb formed in a second direction y on a portion of the rear surface adjacent to the first finger electrode C141F or the second finger electrode C142.

6 (b), the shunt prevention layer ASB according to the present invention is formed on the rear surface of each of the plurality of first electrode pads C141P and the second electrode pads C142P, And a third shunt prevention layer ASBc connecting the first shunt prevention layer ASBa and the second shunt prevention layer ASBb.

6A and 6B, the shunt prevention layer ASB is formed only on the rear surfaces of the plurality of first electrode pads C141P and the second electrode pads C142P. However, Alternatively, the shunt prevention layer ASB may be partially formed on the rear surface of the semiconductor substrate 110 exposed to the periphery of the first electrode pad C141P or the second electrode pad C142P.

6 (c), even when a plurality of the first electrode pads C141P and the second electrode pads C142P are provided, the shunt prevention layer ASB prevents the interconnector IC It is possible to prevent a short circuit by the inter connecter connector ICA when connecting the first electrode pad C141P or the second electrode pad C142P.

In such a case, an example in which two adjacent solar cells are connected to each other through an interconnector (IC) is as shown in FIG.

As described above, when the shunt prevention layer ASB is formed in the periphery of the rear surface of each of the first electrode pad C141P and the second electrode pad C142P to which the interconnector IC is connected, ), It is possible to more easily perform the process of connecting the plurality of solar cells to each other by using the interconnector (IC). Accordingly, the process yield can be further improved during the manufacturing process of the solar cell module.

An example of a solar cell module to which the solar cell having the shunt prevention layer ASB formed therein is applied is as follows.

8 is a view for explaining an example of a solar cell module to which a solar cell having the shunt prevention layer ASB according to the present invention is applied.

8, the solar cell module according to the present invention includes a front glass substrate FG, an upper sealing material EC1, a first solar cell Cell-a, and a second solar cell Cell-b. An interconnection IC for electrically connecting the first solar cell Cell-a and the second solar cell Cell-b, a lower encapsulating material EC2, and a back sheet BS ).

Here, each of the plurality of solar cells can be applied to the solar cells described in Figs. 1 to 7 described above. Therefore, as shown in FIG. 8, the solar cell applied to the solar cell module according to the present invention can be formed with a shunt prevention layer ASB at the periphery of a portion to which the interconnector IC is connected.

The shunt prevention layer ASB may be independently provided in each solar cell. 8, the shunt prevention layer ASB provided in the first solar cell Cell-a and the shunt prevention layer ASB provided in the second solar cell Cell-b are formed in respective solar cells They can be formed to be spaced apart from each other.

Here, the front glass substrate FG may be positioned on the front surface of the cell string where the first solar cell Cell-a and the second solar cell Cell-b are connected to each other by an interconnection IC, Is high and can be made of tempered glass or the like to prevent breakage. At this time, the tempered glass may be a low iron tempered glass having a low iron content, and although not shown, the inner side may be subjected to an embossing treatment to enhance the light scattering effect.

The top sealing material EC1 may be positioned between the front glass substrate FG and the cell string and the bottom sealing material EC2 may be positioned between the back side of the cell string ie the back sheet BS and the cell string .

The upper encapsulating material EC1 and the lower encapsulating material EC2 may be formed of a material that protects the solar cell module 100 from an impact and prevents corrosion of metal due to moisture penetration. For example, the upper encapsulant EC1 and the lower encapsulant EC2 may be made of ethylene vinyl acetate (EVA) or the like.

As shown in FIG. 8, the upper encapsulating material EC1 and the lower encapsulating material EC2 are disposed on the front and rear surfaces of the plurality of solar cells, respectively. In the lamination process, Can be integrated.

In addition, the rear sheet BS is placed on the rear surface of the bottom sealing material EC2 in the form of a sheet to prevent moisture from penetrating into the rear surface of the solar cell module, and a glass substrate FG is used instead of the back sheet BS However, if the back sheet (BS) is used, the manufacturing cost and weight of the solar cell module can be further reduced.

Thus, when the backsheet BS is formed in a sheet form, it may be made of an insulating material such as EP / PE / FP (fluoropolymer / polyeaster / fluoropolymer).

The case where the interconnector IC is directly connected to the back surface of the semiconductor substrate 110 of the solar cell has been described in the description of the shunt shielding layer, The above-described shunt prevention layer ASB can be applied. This is explained as follows.

FIG. 9 is another example of a perspective view of a solar cell according to an example of the present invention, and FIG. 10 is a sectional view of the solar cell shown in FIG. 9 along line 10-10.

9 and 10, a solar cell according to another exemplary embodiment of the present invention includes a semiconductor substrate 110, an antireflection film 130, an emitter portion 121, a rear electric portion (not shown) a back surface field (BSF) 172, a plurality of first electrodes C141 and a plurality of second electrodes C142, a first auxiliary electrode P141, a second auxiliary electrode P142, and an insulating member 200 .

Here, the semiconductor substrate 110, the antireflection film 130, the emitter section 121, and the rear electric field section 172 are the same as those described with reference to FIGS. 1 and 2, and thus will not be described.

3A, the first electrode C141 includes a first finger electrode C141F and a first electrode pad C141P, a second electrode C142 includes a second finger electrode C142 and a second electrode pad C141P. The first electrode pad C141P and the second electrode pad C142P may be omitted in each of the first electrode C141 and the second electrode C142. The structure of the first electrode C141 and the second electrode C142 will be described in more detail with reference to FIG.

The first auxiliary electrode P141 may be electrically connected to the rear surface of the plurality of first electrodes C141. The first auxiliary electrode P141 may be formed in a plurality of or in the form of a single tubular electrode.

Here, when a plurality of first auxiliary electrodes P141 are formed, the first auxiliary electrodes P141 may be formed in the same direction as the plurality of first electrodes C141, or may be formed in an intersecting direction.

The first auxiliary electrode P141 may be electrically connected to each other at a portion overlapping the first electrode C141.

The second auxiliary electrode P142 may be electrically connected to the rear surface of the plurality of second electrodes C142.

The second auxiliary electrode P142 may be formed as a plurality of electrodes or may be formed as a single electrode.

Here, when a plurality of second auxiliary electrodes P142 are formed, the second auxiliary electrodes P142 may be formed in the same direction as the plurality of second electrodes C142, or may be formed in an intersecting direction.

The second auxiliary electrode P142 may be electrically connected to each other at a portion overlapping the second electrode C142.

The first auxiliary electrode P141 and the second auxiliary electrode P142 may be formed of at least one of Cu, Au, Ag, and Al.

The first auxiliary electrode P141 may be electrically connected to the first electrode C141 through an electrode coupling material ECA made of a conductive material and the second auxiliary electrode P142 may be electrically connected to the first electrode C141 through an electrode coupling material ECA And may be electrically connected to the second electrode C142.

The material of the electrode connection material (ECA) is not particularly limited as long as it is a conductive material. However, a conductive material having a melting point at a relatively low temperature of 130 ° C to 250 ° C is more preferable. For example, Conductive adhesives including metal particles, carbon nanotubes (CNTs), conductive particles including carbon, wires, needles, and the like can be used.

An insulating layer IL for preventing a short circuit may be disposed between the first electrode C141 and the second electrode C142 and between the first auxiliary electrode P141 and the second auxiliary electrode P142 . The insulating layer IL may be an epoxy resin.

9 and 10 illustrate only the case where the first electrode C141 and the first auxiliary electrode P141 overlap each other and the second electrode C142 and the second auxiliary electrode P142 overlap each other, The first electrode C141 and the second auxiliary electrode P142 may overlap each other and the second electrode C142 and the first auxiliary electrode P141 may overlap with each other. In this case, the insulating layer IL may be disposed between the first electrode C141 and the second auxiliary electrode P142 and between the second electrode C142 and the second auxiliary electrode P142 to prevent a short circuit. have.

9 and 10 illustrate a plurality of the first auxiliary electrode P141 and the second auxiliary electrode P142 as an example. Alternatively, the first auxiliary electrode P141 and the second auxiliary electrode P142 P142 may be formed as a single sheet electrode.

The first auxiliary electrode P141 and the second auxiliary electrode P142 may be formed by a heat treatment process that applies heat and pressure between 130 ° C and 250 ° C to the electrode connecting material ECA, have.

Although not shown in FIGS. 9 and 10, a first auxiliary electrode (P141) pad (PP141) for series connection of a solar cell may be electrically connected to an end of the first auxiliary electrode (P141) , And a second auxiliary electrode (P142) pad (PP142) for connecting the solar cells in series may be electrically connected to the end of the second auxiliary electrode (P142). This will be described in detail with reference to FIG.

The insulating member 200 may be disposed on the rear surface of the first auxiliary electrode P141 and the second auxiliary electrode P142.

The melting point of the insulating member 200 is preferably not less than 300 DEG C, more preferably not less than 300 DEG C, more preferably not less than 300 DEG C, As shown in Fig. More specifically, it may be formed of at least one material selected from the group consisting of heat resistant polyimide, epoxy-glass, polyester, and BT (bismaleimide triazine) resin.

Such an insulating member 200 may be formed in the form of a flexible film or in the form of a hard plate rather than a flexible one.

In the solar cell according to the present invention, a first auxiliary electrode P141 and a second auxiliary electrode P142 are formed in advance on the entire surface of the insulating member 200, and a plurality of first electrodes The insulating member 200 and the semiconductor substrate 110 may be connected to each other to form a single discrete element in a state in which the plurality of second electrodes C141 and the plurality of second electrodes C142 are formed in advance.

That is, there may be one semiconductor substrate 110 attached to and connected to one insulating member 200, and one insulating member 200 and one semiconductor substrate 110 are attached to each other to form one integrated type So that one solar cell can be formed.

More specifically, a plurality of (a plurality of) semiconductor elements 110 are formed on the back surface of one semiconductor substrate 110 by a process of attaching one insulating member 200 and one semiconductor substrate 110 to each other, The first electrode C141 and the plurality of second electrodes C142 are attached to the first auxiliary electrode P141 and the second auxiliary electrode P142 formed on the front surface of one insulating member 200 and electrically connected to each other . A more detailed description thereof will be described later.

In the solar cell according to the present invention, the thickness T2 of each of the first auxiliary electrode P141 and the second auxiliary electrode P142 is less than the thickness T1 of each of the first electrode C141 and the second electrode C142 ). For example, the thickness T2 of each of the first auxiliary electrode P141 and the second auxiliary electrode P142 may be between 10 μm and 900 μm.

The thickness T2 of each of the first auxiliary electrode P141 and the second auxiliary electrode P142 is set to be larger than 10 mu m in order to ensure a proper minimum resistance and smaller than 900 mu m to ensure a proper minimum resistance So as not to be formed in a thickness more than necessary in one state, thereby reducing the manufacturing cost.

By thus setting the thickness T2 of the first auxiliary electrode P141 and the second auxiliary electrode P142 larger than the thickness T1 of each of the first electrode C141 and the second electrode C142, The process time can be further shortened and thermal stress stress on the substrate can be further reduced than if the first electrode C141 and the second electrode C142 are formed directly on the rear surface of the semiconductor substrate 110, The efficiency of the device can be further improved.

More specifically, it is as follows.

Generally, an emitter, a backside, a first electrode C141 connected to the emitter and a second electrode C142 connected to the backside electrical part formed on the rear surface of the semiconductor substrate 110 are formed by a semiconductor process The first electrode C141 and the second electrode C142 may be directly in contact with or in close proximity to the rear surface of the semiconductor substrate 110 and may be formed by plating, PVD deposition, or heat treatment at a high temperature .

In this case, the thicknesses of the first electrode C141 and the second electrode C142 should be sufficiently thick in order to secure a sufficiently low resistance between the first electrode C141 and the second electrode C142.

However, when the thicknesses of the first electrode C141 and the second electrode C142 are increased, the thermal expansion coefficient of the first electrode C141 and the second electrode C142 including the conductive metal material is lower than the thermal expansion coefficient of the semiconductor substrate 110 ) Of the thermal expansion coefficient of the heat dissipation member.

Therefore, during the process of forming the first electrode C141 and the second electrode C142 on the rear surface of the semiconductor substrate 110 by a high-temperature heat treatment process, the first electrode C141 and the second electrode C142 contract The semiconductor substrate 110 can not withstand the stress of thermal expansion and thus the possibility of fracture or cracking of the semiconductor substrate 110 is increased and the yield of the solar cell manufacturing process is lowered, The efficiency may be lowered.

In addition, when the first electrode C141 or the second electrode C142 is formed by plating or PVD deposition, the growth rate of the first electrode C141 or the second electrode C142 is very small, Time can be excessive.

However, in the solar cell according to the present invention, the first electrode (C141) and the second electrode (C142) are formed on the rear surface of the semiconductor substrate (110) with a relatively small thickness (T1) The first auxiliary electrode P141 and the second auxiliary electrode P142 formed on the front surface of the first electrode C141 and the second electrode C142 are formed to overlap with each other with a relatively large thickness T2, The insulating member 200 and the one semiconductor substrate 110 can be attached to each other by a heat treatment process in which heat and pressure of 130 to 250 ° C, which is relatively low compared to the ECA, It is possible to prevent cracks or cracks from being generated in the semiconductor substrate 110 and at the same time the resistance of the electrodes formed on the rear surface of the semiconductor substrate 110 can be greatly reduced.

In addition, since the thickness T1 of the first electrode C141 and the second electrode C142 is relatively reduced, the solar cell according to the present invention can minimize the semiconductor manufacturing process time, which is relatively long, The first electrode C141 and the first auxiliary electrode P141 and the second electrode C142 and the second auxiliary electrode P142 can be connected to each other by the heat treatment process of the solar cell, can do.

When the first auxiliary electrode P141 and the second auxiliary electrode P142 are bonded to the first electrode C141 and the second electrode C142 formed on the rear surface of the semiconductor substrate 110, , And helps the process more easily.

That is, the insulating member 200 (200) having the first auxiliary electrode P141 and the second auxiliary electrode P142 formed on the rear surface of the semiconductor substrate 110 in which the first electrode C141 and the second electrode C142 are formed in the semiconductor manufacturing process , The insulating member 200 can facilitate the alignment process and the bonding process more easily.

In the case of the solar cell in which the insulating member 200 and the semiconductor substrate 110 are connected to each other to form a single unitary discrete element in this way, in order to prevent a short circuit by the interconnection connector ICA, The shunt prevention layer ASB may be formed around the portion where the inter connecter IC contacts. More specifically, the structures of the first auxiliary electrode P141 and the second auxiliary electrode P142 will be described below.

FIG. 11 is a view for explaining an example of the semiconductor substrate 110, the insulating member 200, and the shunt prevention layer ASB to be individually connected to each other in the solar cell shown in FIG. 9 and FIG.

11A is a view for explaining an example of a semiconductor substrate 110 in which a first electrode C141 and a second electrode C142 are disposed on the rear surface. FIG. 11B is a cross- 11C is a sectional view of the insulating member 200 in which the first auxiliary electrode P141 and the second auxiliary electrode P142 are disposed on the entire surface, 11 (d) is a cross-sectional view taken along line 11 (d) -11 (d) in FIG. 11 (c).

The solar cell shown in Figs. 11 to 13C can be applied to the solar cell described in Figs. 9 and 10 above. In addition, the solar cell in which the first electrode C141 and the second electrode C142 are disposed on the rear surface of the semiconductor substrate 110 can be applied to any solar cell.

A front surface of one insulating member 200 as shown in FIGS. 11C and 11D is formed on the rear surface of one semiconductor substrate 110 as shown in FIGS. 11A and 11B, By attaching and connecting, the solar cell according to the present invention can form one integrated discrete element.

As shown in FIGS. 11A and 11B, on the rear surface of the semiconductor substrate 110 of the solar cell illustrated in FIGS. 9 and 10, a plurality of first electrodes C141 and a plurality of second electrodes (C142) may be spaced apart from each other and elongated in the first direction (x). 1 and 2, each of the first electrode C141 and the second electrode C142 included in the solar cell illustrated in FIGS. 9 and 10 includes a first electrode pad C141P and a second electrode pad C142, The two-electrode pad C142P may be omitted and only the first finger electrode C141F and the second finger electrode C142 may be included.

Although the width WC142 of the first electrode C141 and the width WC142 of the second electrode C142 are shown as an example, the width WC142 of the first electrode C141 and the width of the second electrode C142 May be formed differently from each other.

11C and 11D, a plurality of first auxiliary electrodes P141 and a plurality of second auxiliary electrodes P142 are formed on the front surface of the insulating member 200 according to the present invention, And may be formed to be long in the first direction (x).

A first auxiliary electrode pad PP141 extending in a second direction y is further provided at the ends of the plurality of first auxiliary electrodes P141 formed in the first direction x on the front surface of the insulating member 200 And the first auxiliary electrode pad PP141 may be connected to the ends of the plurality of first auxiliary electrodes P141.

A second auxiliary electrode pad PP142 extending in the second direction y is further provided at the end of the plurality of second auxiliary electrodes P142 formed in the first direction x on the front surface of the insulating member 200 And the second auxiliary electrode pad PP142 may be connected to the ends of the plurality of second auxiliary electrodes P142.

Here, the first auxiliary electrode P141 and the second auxiliary electrode pad PP142 may be spaced apart from each other, and the second auxiliary electrode P142 and the first auxiliary electrode pad PP141 may be spaced apart from each other.

The first auxiliary electrode pad PP141 is formed in the second direction y at one end of both ends of the first direction x on the front surface of the insulating member 200 and the second auxiliary electrode pad PP142 may be formed in the second direction y, respectively. The first auxiliary electrode pad PP141 and the second auxiliary electrode pad PP142 may be electrically connected to an interconnector (IC) for connecting the solar cells to each other, or a plurality of cell strings, Ribbons for connecting to each other can be electrically connected.

The thicknesses of the first auxiliary electrode pad PP141 and the second auxiliary electrode pad PP142 may be equal to or different from the thickness T2 of the first auxiliary electrode P141 and the second auxiliary electrode P142, . Hereinafter, the case where the thickness is the same will be described as an example.

In addition, the solar cell according to the present invention can form one integral individual element by attaching and connecting the front surface of one insulating member 200 to the rear surface of one semiconductor substrate 110. That is, the insulating member 200 and the semiconductor substrate 110 may be bonded or attached at a ratio of 1: 1.

Here, the insulating member 200 according to the present invention may not overlap with the semiconductor substrate 110 of another adjacent solar cell.

Therefore, when a plurality of solar cells are connected to each other, the insulating member 200 included in each solar cell can be formed without being overlapped with other adjacent solar cells.

As described above, in the solar cell according to the present invention, only one insulating member 200 is coupled to one semiconductor substrate 110 to form one integrated individual element, thereby making it easier to manufacture the solar cell module, Even if the semiconductor substrate 110 included in one of the solar cells is broken or defects are generated during the manufacturing process of the solar cell module, only the corresponding solar cell formed by one integrated type individual element can be replaced and the process yield can be further improved have.

In addition, when the solar cell or the solar cell module is manufactured, the solar cell formed by one integral individual element can minimize the thermal expansion stress applied to the semiconductor substrate 110.

Here, when the area of the insulating member 200 is equal to or larger than the area of the semiconductor substrate 110, an interconnector (IC) may be attached to the front surface of the insulating member 200 when the solar cell and the solar cell are connected to each other It is possible to secure a sufficient area.

The first auxiliary electrode P141 and the second auxiliary electrode P142 formed on the entire surface of the insulating member 200 are electrically connected to the semiconductor substrate 110 by making the area of the insulating member 200 smaller than twice the area of the semiconductor substrate 110. [ The thermal stress applied to the semiconductor substrate 110 can be minimized when the first electrode C141 and the second electrode C142 are formed on the rear surface of the substrate 110. [

The rear surface of the semiconductor substrate 110 and the front surface of the insulating member 200 are adhered to each other so that the first electrode C141 and the first auxiliary electrode P141 are connected to each other and the second electrode C142 and the second The auxiliary electrode P142 may be connected to each other.

As described above, in the insulating member 200, the shunt prevention layer ASB can be formed around the portion to which the interconnector IC is connected.

11 (c) and 11 (d), the shunt prevention layer ASB has a structure in which the prevention layer is formed in the second direction y, which is the longitudinal direction of the first auxiliary electrode pad PP141, And may be formed between the electrode pad PP141 and the second auxiliary electrode P142. At this time, the shunt prevention layer ASB may be formed on a part of the first auxiliary electrode pad PP141, and may be formed between the first auxiliary electrode pad PP141 and the second auxiliary electrode P142.

In addition, the shunt prevention layer ASB may be formed between the second auxiliary electrode pad PP142 and the first auxiliary electrode P141 in the second direction y, which is the longitudinal direction of the second auxiliary electrode pad PP142 . At this time, the shunt prevention layer ASB may be formed on a portion of the second auxiliary electrode pad PP142, and may be formed between the second auxiliary electrode pad PP142 and the first auxiliary electrode P141.

After the shunt prevention layer ASB according to the present invention is formed in advance on the insulating member 200, the insulating member 200 can be connected to the semiconductor substrate 110 to form one integral individual element.

Alternatively, the first auxiliary electrode pad PP141 and the second auxiliary electrode P142 of the insulating member 200, the second auxiliary electrode pad PP142 and the first auxiliary electrode P141, It is also possible to form a single integrated element by connecting the semiconductor substrate 110 and the insulating member 200 in a state where the shunt prevention layer ASB is previously formed on a part of the rear surface of the substrate 110. [

Hereinafter, the position of the shunt prevention layer ASB in a state in which the semiconductor substrate 110 and the insulating member 200 form one integrated discrete element will be described.

12 is a view for explaining the position of the shunt prevention layer ASB in a state where the semiconductor substrate 110 and the insulating member 200 shown in Fig. 11 are connected to each other. Fig. 13A is a cross- Fig. 13B is a cross-sectional view taken along line 13B-13B in Fig. 12, and Fig. 13C is a cross-sectional view taken along line 12C-13C in Fig.

As shown in FIG. 12, one semiconductor substrate 110 may be completely overlapped with one insulating member 200 to form one solar cell individual element.

At this time, the first electrode (C141) and the first auxiliary electrode (P141) may be connected and connected to each other in the first direction (x) on the rear surface of the substrate, and the second electrode (C142) P142 may also be connected and connected to each other in the first direction (x).

13A, the first electrode C141 formed on the rear surface of the semiconductor substrate 110 and the first auxiliary electrode P141 formed on the front surface of the insulating member 200 are overlapped with each other, May be electrically connected to each other by a capacitor CA1.

The second electrode C142 formed on the rear surface of the semiconductor substrate 110 and the second auxiliary electrode P142 formed on the front surface of the insulating member 200 are also overlapped with each other by the conductive electrode connector CA1, Can be connected.

The space between the first electrode C141 and the second electrode C142 may be filled with an insulating layer IL and a gap between the first auxiliary electrode P141 and the second auxiliary electrode P142 The insulating layer IL may be filled.

Each of the first auxiliary electrode pad PP141 and the second auxiliary electrode pad PP142 includes a first region PP141-S1 and a second auxiliary electrode pad PP142 overlapping the semiconductor substrate 110, (PP141-S2, PP142-S2).

The first area PP141-S1 of the first auxiliary electrode pad PP141 may be connected to a plurality of first auxiliary electrodes P141 and the second area PP141-S2 may be connected to the interconnector IC The semiconductor substrate 110 can be exposed to the outside without overlapping with the semiconductor substrate 110 in order to secure a space. The second area PP142-S2 may be connected to the second area PP142-S1 in the first area PP142-S1 of the second auxiliary electrode pad PP142 and the second area PP142- The semiconductor substrate 110 can be exposed to the outside without overlapping with the semiconductor substrate 110 in order to secure a space.

The first auxiliary electrode pad PP141 and the second auxiliary electrode pad PP142 according to the present invention include the second areas PP141-S2 and PP142-S2, respectively, In addition, when the interconnector (IC) is connected to the solar cell, the thermal expansion stress on the semiconductor substrate 110 can be minimized.

The first auxiliary electrode pad PP141 and the second auxiliary electrode pad PP142 are electrically connected to the semiconductor substrate 110 such that the second regions PP141-S2 and PP142- And the interconnection IC can be connected to the second regions PP141-S2 and PP142-S2.

The first auxiliary electrode pad PP141 and the second auxiliary electrode P142 are short-circuited by the interconnection ICA during the process of connecting the inter-connector IC, and the second auxiliary electrode pad PP142 may be short- The shunt prevention layer ASB may be positioned to prevent the first auxiliary electrode P141 and the first auxiliary electrode P141 from being short-circuited.

12, the shunt prevention layer ASB is formed on the first area PP141-S1 of the first auxiliary electrode pad PP141 and on the first area PP141 of the first auxiliary electrode pad PP141, -S1) and the second auxiliary electrode (P142).

13B, the second auxiliary electrode P142 and the first auxiliary electrode pad PP141 are insulated by the shunt prevention layer ASB so that shorting by the interconnection connector ICA is prevented .

The shunt prevention layer ASB is formed on the first area PP142-S1 of the second auxiliary electrode pad PP142, the first area PP142-S1 of the second auxiliary electrode pad PP142, P141).

Therefore, as shown in FIG. 13C, the first auxiliary electrode P141 and the second auxiliary electrode pad PP142 are insulated by the shunt prevention layer ASB so that a short circuit can be prevented.

At this time, for the sake of simplifying the process, the shunt prevention layer ASB may be made of the same material as the material of the insulating layer IL. However, it is not necessarily limited to this, and other materials may be used.

The first electrode C141 and the second electrode C142 formed on the semiconductor substrate 110 are overlapped with the first auxiliary electrode P141 and the second auxiliary electrode P142 formed on the insulating member 200 in a direction parallel to the first auxiliary electrode P141 and the second auxiliary electrode P142, The first electrode C141 and the second electrode C142 formed on the semiconductor substrate 110 are electrically connected to the first auxiliary electrode P141 formed on the insulating member 200 and the second auxiliary electrode P141 formed on the insulating member 200, The shunt prevention layer ASB is formed on the first area PP141-S1 of the first auxiliary electrode pad PP141 and on the first auxiliary electrode pad PP141 in the overlapping manner in the direction crossing the auxiliary electrode P142, May be located in a space between the first area PP141-S1 of the second auxiliary electrode pad PP142 and the second auxiliary electrode P142 and on the first area PP142-S1 of the second auxiliary electrode pad PP142, May be located in a space between the first region PP142-S1 of the first switching transistor PP142 and the first auxiliary electrode P141.

Also, in the case where the first auxiliary electrode P141 and the second auxiliary electrode P142 are not formed in plural but are formed as a single tubular electrode, the above-described shunt prevention layer ASB may be similarly applied have.

Hereinafter, a solar cell module using a solar cell, in which the semiconductor substrate 110 and the insulating member 200 are integrally connected and formed of one discrete element, will be described below.

14 shows an example of a solar cell module to which a solar cell formed by a single element and a semiconductor substrate 110 and an insulating member 200 are integrally connected.

In FIG. 14, the same parts as those described in FIG. 8 with respect to the solar cell module are omitted.

14, in the case where a solar cell formed by a single element and a semiconductor substrate 110 and an insulating member 200 are integrally connected to the solar cell module, the interconnector (IC) May be connected to the first auxiliary electrode pad PP141 and the second auxiliary electrode pad PP142.

14, the interconnection IC includes, for example, a second region PP141-S2 of the first auxiliary electrode pad PP141 and a second region PP142 of the second auxiliary electrode pad PP142. (ICA) to the connection terminals PP142-S2.

At this time, as described above, the shunt prevention layer ASB is formed in the first area PP141-S1 of the first auxiliary electrode pad PP141 and the first area PP142-S1 of the second auxiliary electrode pad PP142, The interconnecting connector ICA can not spread beyond the second area PP141-S1 of the first auxiliary electrode pad PP141 or the second area PP142-S2 of the second auxiliary electrode pad PP142 . Accordingly, a short circuit may occur between the first auxiliary electrode pad PP141 and the second auxiliary electrode P142 or a short circuit may occur between the second auxiliary electrode pad PP142 and the first auxiliary electrode P141 during the connection process of the IC Can be prevented.

14 shows that the interconnector IC and the semiconductor substrate 110 are not separated from each other. However, it is also possible to prevent a short circuit between the inter connector IC and the semiconductor substrate 110, In order to further improve the optical gain, the interconnector (IC) and the semiconductor substrate 110 may be spaced from each other.

Although the front surface of the interconnector (IC) is shown as flat in FIG. 14, in order to further improve the optical gain by the interconnector (IC), the front surface of the interconnector can do.

It will be apparent to those skilled in the art that various modifications, substitutions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. will be. Therefore, the embodiments disclosed in the present invention and the accompanying drawings are intended to illustrate and not to limit the technical spirit of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments and the accompanying drawings . The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

Claims (20)

A semiconductor substrate;
An emitter portion formed on the semiconductor substrate;
A first electrode formed on a rear surface of the semiconductor substrate and connected to the emitter;
And a second electrode formed on a rear surface of the semiconductor substrate so as to be spaced apart from the first electrode and connected to the semiconductor substrate,
Wherein a shunt prevention layer made of an insulating material is further formed on a periphery of a portion of the rear surface of each of the first electrode and the second electrode, to which the interconnector connecting adjacent solar cells is connected. The method according to claim 1,
Wherein the shunt prevention layer is formed on at least one portion of a periphery of a portion where the interconnector contacts the first electrode and the second electrode. 3. The method of claim 2,
The shunt prevention layer is formed between a portion of the rear surface of the first electrode that is connected to the interconnector and an end of the semiconductor substrate or a rear surface of the second electrode between a portion to which the interconnector is connected and an end of the semiconductor substrate Solar cells. 3. The method of claim 2,
Wherein the shunt prevention layer is located between a portion connected to the interconnector and the first electrode or between a portion connected to the interconnector and the second electrode. 3. The method of claim 2,
Wherein the shunt prevention layer is formed on a rear surface of the semiconductor substrate exposed in a space between the first electrode and the second electrode. 3. The method of claim 2,
The first electrode
A plurality of first finger electrodes spaced apart from each other on a rear surface of the semiconductor substrate;
And a first electrode pad having one side commonly connected to the plurality of first finger electrodes and the other side connected to the interconnector,
The second electrode
A plurality of second finger electrodes spaced apart from each other on a rear surface of the semiconductor substrate;
And a second electrode pad having one side commonly connected to the plurality of second finger electrodes and the other side connected to the interconnector. The method according to claim 6,
Wherein the shunt prevention layer is formed on each of the first electrode pad and the second electrode pad at a portion adjacent to an end of the semiconductor substrate. The method according to claim 6,
Wherein the shunt prevention layer is formed on a portion of the first electrode pad adjacent to the plurality of second finger electrodes. The method according to claim 6,
Wherein the shunt prevention layer is formed on a portion of the second electrode pad adjacent to the plurality of first finger electrodes. A first solar cell and a second solar cell having the structure of claim 1; And
And the interconnector electrically connecting the first solar cell and the second solar cell to each other. 11. The method of claim 10,
Wherein the shunt barrier layer of the first solar cell and the shunt barrier layer of the second solar cell are independently provided in the respective solar cells and are separated from each other. 11. The method of claim 10,
The interconnector is connected to the first electrode of the first solar cell and the second electrode of the second solar cell by an interconnecting connector made of a conductive material,
In each of the first solar cell and the second solar cell,
Wherein the position of the shunt prevention layer is positioned outside the respective solar cells relative to the position of the interconnect connector. A semiconductor substrate;
An emitter portion formed on the semiconductor substrate;
A plurality of first electrodes formed on a rear surface of the semiconductor substrate and connected to the emitter;
A plurality of second electrodes formed on a rear surface of the semiconductor substrate so as to be spaced apart from the first electrodes and connected to the semiconductor substrate;
And an insulating member including a first auxiliary electrode connected to the plurality of first electrodes and a second auxiliary electrode connected to the plurality of second electrodes,
Wherein the insulating member and the semiconductor substrate are connected to each other to form one integrated discrete element,
Wherein a shunt prevention layer made of an insulating material is further formed in the periphery of a portion to which an interconnecting connector connecting adjacent solar cells is connected. 14. The method of claim 13,
Wherein the first auxiliary electrode and the second auxiliary electrode are spaced apart from each other in the first direction,
Wherein the first auxiliary electrode further comprises a first auxiliary electrode pad extending in a second direction intersecting the first direction at an end extending in the first direction,
And a second auxiliary electrode pad extending in the second direction at an end of the second auxiliary electrode extending in the first direction. 15. The method of claim 14,
The shunt-
And between the second auxiliary electrode pad and the first auxiliary electrode, and between the second auxiliary electrode pad and the first electrode. 15. The method of claim 14,
Wherein the plurality of first electrodes and the first auxiliary electrode and the plurality of second electrodes and the second auxiliary electrode are electrically connected to each other by a conductive electrode coupling material. 15. The method of claim 14,
Wherein an insulating layer is formed between the plurality of first electrodes and the second electrode, and between the plurality of first auxiliary electrodes and the second auxiliary electrode. 18. The method of claim 17,
The material of the shunt prevention layer is the same as or different from that of the insulating layer. A first solar cell and a second solar cell having the structure of claim 10; And
And the interconnector electrically connecting the first solar cell and the second solar cell to each other. 20. The method of claim 19,
Wherein the shunt barrier layer of the first solar cell and the shunt barrier layer of the second solar cell are independently provided in the respective solar cells and are separated from each other.

Images