KR20150035114A - Substrate for RGB LED chip and method of fabricating RGB LED package - Google Patents
Substrate for RGB LED chip and method of fabricating RGB LED package Download PDFInfo
- Publication number
- KR20150035114A KR20150035114A KR20130115322A KR20130115322A KR20150035114A KR 20150035114 A KR20150035114 A KR 20150035114A KR 20130115322 A KR20130115322 A KR 20130115322A KR 20130115322 A KR20130115322 A KR 20130115322A KR 20150035114 A KR20150035114 A KR 20150035114A
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- South Korea
- Prior art keywords
- light emitting
- emitting diode
- electrode pattern
- diode chip
- current amount
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title description 7
- 238000000034 method Methods 0.000 claims description 24
- 230000000903 blocking effect Effects 0.000 claims 2
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 description 24
- 230000001276 controlling effect Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
Description
The present invention relates to a substrate for an RGB light emitting diode chip and a method of manufacturing an RGB light emitting diode package using the same.
BACKGROUND OF THE INVENTION [0002] Light emitting diodes (LEDs) having low power consumption and longer lifetime are widely used as light sources for various lighting apparatuses. Such a light emitting diode is widely used as a light source for a large display device such as a thin light unit for a mobile phone or a liquid crystal display, and for illumination. A light emitting diode element is an element that converts electric energy into light energy to generate light, and generally comprises an active layer having a heterojunction structure of a p-type semiconductor and an n-type semiconductor and emitting various light. The light emitting diode is typically used in the form of a light emitting diode package in which the light emitting diode chip is mounted on a substrate such as a printed circuit board (PCB) or a submount including a wiring layer and an insulating layer.
One of them is a method of mounting an RGB light emitting diode chip on a substrate having an electrode pattern. Here, the RGB light emitting diode chip is a red (R) light emitting diode chip, A green (G) light emitting diode chip, and a blue (B) light emitting diode chip. That is, a red (R) light emitting diode chip, a green (G) light emitting diode chip, and a blue (B) light emitting diode chip are mounted on one substrate to emit white light in which mixed light emitted from each light emitting diode chip is mixed . In this case, each of the light emitting diode chips share an electrode of the substrate, and it is therefore difficult to individually adjust the amount of current supplied to each light emitting diode chip. Therefore, after the RGB light emitting diode chip is mounted on the substrate, it is impossible to control the color coordinates and change the directing angle without replacing the RGB light emitting diode chip.
SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate for an RGB light emitting diode chip which can adjust the color coordinates of emitted light and change the directivity angle even after mounting an RGB light emitting diode chip on a substrate.
Another object of the present invention is to provide a method of manufacturing an RGB light emitting diode package using such a substrate.
A substrate for an RGB light emitting diode chip according to an exemplary embodiment includes a substrate body, a first electrode pattern disposed on the substrate body and connected to one electrode pad of the RGB light emitting diode chip, A second electrode pattern connected to the electrode pad, and a current amount control region disposed in at least one of the first electrode pattern and the second electrode pattern to locally restrict current movement to the RGB light emitting diode chip.
A method of manufacturing an RGB light emitting diode package according to an exemplary embodiment includes disposing a substrate body, a first electrode pattern and a second electrode pattern disposed on a substrate body, and at least one of a first electrode pattern and a second electrode pattern Preparing a substrate including a current amount control region that locally restricts current movement to the RGB light emitting diode chip; A step of mounting a chip on a substrate, a step of detecting a color coordinate of light emitted from the RGB light emitting diode chip, and a step of locally changing the amount of current in the current amount controlling region to adjust the color coordinates of the light.
According to an embodiment of the present invention, even after the RGB light emitting diode chip is mounted on the substrate, it is possible to adjust the color coordinates of the light emitted without replacing the RGB light emitting diode chip and change the directivity angle.
1 is a layout diagram showing a substrate for an RGB light emitting diode chip according to an example.
FIG. 2 is a layout diagram illustrating a process of adjusting the amount of current of the substrate of FIG. 1; FIG.
3 is a layout diagram showing a substrate for an RGB light emitting diode chip according to another example.
4 is a layout diagram showing a substrate for a RGB light emitting diode chip according to another example.
5 is a layout diagram showing a substrate for a RGB light emitting diode chip according to another example.
6 is a layout diagram showing a substrate for a RGB light emitting diode chip according to another example.
FIG. 7 is a flowchart illustrating a method of manufacturing an RGB light emitting diode package according to an exemplary embodiment. Referring to FIG.
1 is a layout diagram showing a substrate for an RGB light emitting diode chip according to an example. And FIG. 2 is a layout diagram for explaining a current amount adjustment process of the substrate of FIG. Referring to FIGS. 1 and 2, a
The
The
Current
In one example, each of the current
3 is a layout diagram showing a substrate for an RGB light emitting diode chip according to another example. Referring to FIG. 3, a
The
In this example, the red (R) light emitting
Current
In this example, the current
A current
In one example, each of the current
4 is a layout diagram showing a substrate for a RGB light emitting diode chip according to another example. Referring to FIG. 4, a
The
In this example, the RGB light emitting
The current
Current
In one example, each of the current
5 is a layout diagram showing a substrate for a RGB light emitting diode chip according to another example. Referring to FIG. 5, a
The
In this example, the RGB light emitting
The current
A current
In one example, each of the current
6 is a layout diagram showing a substrate for a RGB light emitting diode chip according to another example. Referring to FIG. 6, a
The
In this example, the single RGB light emitting diode chip 505 includes a red (R) light emitting
The
Current
In one example, each of the current
FIG. 7 is a flowchart illustrating a method of manufacturing an RGB light emitting diode package according to an exemplary embodiment. Referring to FIG. Referring to FIG. 7 together with FIG. 1, an RGB light emitting diode chip is mounted on the
Next, the color coordinates of the detected light are analyzed to determine whether or not cutting of the fuse pattern is necessary (step 730). In one example, the analysis of the detected color coordinates may be performed automatically through a controller connected to the photodetector. For example, in a state in which allowable data for a light color coordinate is input, it is determined whether or not the color coordinate of the light detected by the controller operation is within the input data range, and then, when the data range is out of the input data range, The fuse pattern is cut through laser irradiation (step 740). For this purpose, a process of photographing an image of a fuse pattern in advance and determining a fuse pattern to be cut using the sensed image may be performed. After correcting the color coordinates of the light through the cutting of the fuse pattern,
100:
110 ...
120 ...
122, 123, 124 ... second branch electrode pattern
130, 140, 150 ... Amount of current control region
132, 142, 152 ... Ampere adjustment pattern (fuse pattern)
Claims (20)
A first electrode pattern disposed on the substrate body and connected to one electrode pad of the RGB light emitting diode chip;
A second electrode pattern disposed on the substrate body and connected to another electrode pad of the RGB light emitting diode chip; And
And a current amount control region disposed in at least one of the first electrode pattern and the second electrode pattern to locally restrict current movement to the RGB LED chip.
Wherein the RGB light emitting diode chip includes a red (R) light emitting diode chip, a green (R) light emitting diode chip, and a blue (B) light emitting diode chip.
The red (R) light emitting diode chip, the green (R) light emitting diode chip, and the blue (B) light emitting diode chip may be a substrate for a RGB light emitting diode chip having a horizontal structure.
The R, G and B light emitting diode chips of the vertical structure are connected to the first electrode pattern and the second electrode pattern through a wire, and the RGB light emitting diode chip, the green light emitting diode chip, and the blue light emitting diode chip, A substrate for a chip.
Wherein the red (R) light emitting diode chip, the green (R) light emitting diode chip, and the blue (B) light emitting diode chip are vertical type substrates for a RGB light emitting diode chip.
The vertical (red), green (R) and blue (B) light emitting diode chips are connected to the first electrode pattern and the second electrode pattern through pads and wires, respectively. A substrate for a light emitting diode chip.
The RGB light emitting diode chip is a single chip structure having a red (R) light emitting diode cell, a green (R) light emitting diode cell, and a blue (B) light emitting diode cell.
Wherein the first electrode pattern comprises a first electrode pattern frame having a rectangular shape.
The second electrode pattern includes a second electrode pattern frame and a plurality of second branch electrode patterns branched from the second electrode pattern frame and extending toward the first electrode pattern frame. .
Wherein the current amount control region is disposed in at least one of the plurality of second branch electrode patterns.
Wherein the first electrode pattern comprises a first electrode pattern frame and a plurality of first branch electrode patterns branched from the first electrode pattern frame and extending toward the second electrode pattern.
Wherein the second electrode pattern includes a second electrode pattern frame and a plurality of second branch electrode patterns branched from the second electrode pattern frame and extending toward the first electrode pattern.
Wherein the current amount controlling region is disposed in at least one of the plurality of first branch electrode patterns and the plurality of second branch electrode patterns.
Wherein the current amount control region includes a plurality of current amount control patterns for blocking a current path for a current under a predetermined condition.
Wherein the current amount control pattern includes a fuse pattern cut by laser irradiation.
Mounting RGB light emitting diode chips on a substrate such that different electrode pads of the RGB light emitting diode chip are connected to the first electrode pattern and the electrode pattern, respectively;
Detecting a color coordinate of light emitted from the RGB light emitting diode chip; And
And adjusting a color coordinate of the light by locally changing a current amount of the current amount control region.
Wherein the step of detecting a color coordinate of light emitted from the RGB light emitting diode chip is performed using a photodetector.
Wherein the current amount controlling region includes a plurality of fuse patterns blocking a current path in a predetermined condition.
Wherein the adjusting of the color coordinates of the light by locally changing the amount of current in the current amount adjusting region is performed by cutting a part of the fuse pattern in the current amount adjusting region.
Wherein the cutting of the fuse pattern is performed using laser irradiation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR20130115322A KR20150035114A (en) | 2013-09-27 | 2013-09-27 | Substrate for RGB LED chip and method of fabricating RGB LED package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR20130115322A KR20150035114A (en) | 2013-09-27 | 2013-09-27 | Substrate for RGB LED chip and method of fabricating RGB LED package |
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KR20150035114A true KR20150035114A (en) | 2015-04-06 |
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KR20130115322A KR20150035114A (en) | 2013-09-27 | 2013-09-27 | Substrate for RGB LED chip and method of fabricating RGB LED package |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10230021B2 (en) | 2015-09-30 | 2019-03-12 | Samsung Electronics Co., Ltd. | Light emitting device package |
KR20210059440A (en) | 2019-11-15 | 2021-05-25 | 주식회사 글로우원 | Large Display Apparatus |
-
2013
- 2013-09-27 KR KR20130115322A patent/KR20150035114A/en not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10230021B2 (en) | 2015-09-30 | 2019-03-12 | Samsung Electronics Co., Ltd. | Light emitting device package |
US10629782B2 (en) | 2015-09-30 | 2020-04-21 | Samsung Electronics Co., Ltd. | Light emitting device package |
US10903397B2 (en) | 2015-09-30 | 2021-01-26 | Samsung Electronics Co., Ltd. | Light emitting device package |
KR20210059440A (en) | 2019-11-15 | 2021-05-25 | 주식회사 글로우원 | Large Display Apparatus |
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