KR20150029530A - Organic light- emitting display apparatus - Google Patents

Abstract

According to one embodiment of the present invention, an organic light emitting display apparatus includes a first electrode, a second electrode which is arranged in the upper part of the first electrode and contains Ag and Mg, an organic light emitting layer which is arranged between the first electrode an the second electrode, a metal layer which is arranged between the organic light emitting layer and the second electrode, and a barrier layer which is arranged between the organic light emitting layer and the second electrode.

Description

[0001] The present invention relates to an organic light-

Embodiments of the present invention relate to an organic light emitting display.

2. Description of the Related Art Recently, display devices have been diversified in use. Particularly, the thickness of the display device is reduced and the weight is lighter, and the range of use is widening.

Among these organic light emitting display devices, self-emission display devices are excellent in power consumption characteristics, image quality characteristics, and the like, and many studies have been conducted in recent years.

The organic light emitting display includes a first electrode, a second electrode facing the first electrode, and an organic light emitting layer disposed between the first electrode and the second electrode. The organic light emitting layer generates visible light through recombination of holes and electrons when a voltage is applied to the first electrode and the second electrode.

Various materials have been used for improving the characteristics of the second electrode, and various attempts have been made to improve the luminescent characteristics and durability.

Embodiments of the present invention provide an organic light emitting display.

One embodiment of the present invention provides a light emitting device comprising a first electrode, a second electrode disposed above the first electrode and containing Ag and Mg, an organic light emitting layer disposed between the first electrode and the second electrode, A metal layer disposed between two electrodes, and a barrier layer disposed between the organic light emitting layer and the second electrode.

In this embodiment, the metal layer is made of at least one of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) And Ce (cesium).

In this embodiment, the barrier layer may contain fluoride.

In the present embodiment, the fluoride may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

In this embodiment, the barrier layer may contain an oxide.

In the present embodiment, the oxide may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

In the present embodiment, the barrier layer may contain a halogen compound.

In the present embodiment, the second electrode may contain a larger amount of Ag than Mg, based on the weight percentage.

In this embodiment, the metal layer may be disposed closer to the second electrode than the barrier layer.

In this embodiment, the metal layer may be disposed in contact with the second electrode.

In this embodiment, the barrier layer may be disposed closer to the second electrode than the metal layer.

The organic light emitting device of the present invention may further include a buffer layer disposed between the second electrode and the organic light emitting layer.

In this embodiment, the buffer layer may be disposed closer to the organic light emitting layer than the metal layer and the barrier layer.

In this embodiment, the buffer layer may contain fluoride.

In the present embodiment, the fluoride may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

In this embodiment, the buffer layer may contain an oxide.

In the present embodiment, the oxide may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

In this embodiment, the buffer layer may contain chloride.

In this embodiment, the chloride may include RbCl.

In the present embodiment, the organic light emitting device may further include an electron transport layer disposed between the second electrode and the organic light emitting layer, and the metal layer and the barrier layer may be disposed between the electron transport layer and the second electrode.

In this embodiment, a buffer layer may be further disposed between the organic light emitting layer and the electron transporting layer.

In this embodiment, the buffer layer may include at least one selected from the group consisting of fluoride, oxide, chloride, and organic materials.

Another embodiment of the present invention is directed to a liquid crystal display device comprising a first electrode, a second electrode disposed above the first electrode and containing Ag and Mg, an organic light emitting layer disposed between the first electrode and the second electrode, And a mixed layer disposed between the two electrodes and containing a metal material and a barrier material.

In this embodiment, the metal material may be at least one of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) , And Ce (cesium).

In this embodiment, the barrier material may contain a fluoride.

In the present embodiment, the fluoride may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

In this embodiment, the barrier material may contain an oxide.

In the present embodiment, the oxide may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

In this embodiment, the barrier material may contain a halogen compound.

In this embodiment, the mixed layer may be formed so that the barrier material is larger than the metal material on a weight basis.

The organic light emitting device of the present invention may further include a buffer layer disposed between the second electrode and the organic light emitting layer.

In this embodiment, the buffer layer may be disposed closer to the organic light emitting layer than the mixed layer.

In this embodiment, the buffer layer may contain fluoride.

In the present embodiment, the fluoride may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

In this embodiment, the buffer layer may contain an oxide.

In the present embodiment, the oxide may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

In this embodiment, the buffer layer may contain chloride.

In this embodiment, the chloride may include RbCl.

In this embodiment, the buffer layer may contain an organic material.

In the present embodiment, the organic light emitting device may further include an electron transport layer disposed between the second electrode and the organic light emitting layer, and the mixed layer may be disposed between the electron transport layer and the second electrode.

In this embodiment, a buffer layer may be further disposed between the organic light emitting layer and the electron transporting layer.

In this embodiment, the buffer layer may include at least one selected from the group consisting of fluoride, oxide, chloride, and organic materials.

Another embodiment of the present invention is directed to an organic light emitting display having a plurality of pixels, wherein each pixel of the plurality of pixels includes a first electrode, a second electrode disposed on the first electrode and containing Ag and Mg, An organic light emitting layer disposed between the first electrode and the second electrode, a metal layer disposed between the organic light emitting layer and the second electrode, and a barrier layer disposed between the organic light emitting layer and the second electrode, The display device is started.

In this embodiment, the barrier layer or the metal layer may be formed in common for two or more pixels.

In the present embodiment, the barrier layer or the metal layer may be formed separately for each pixel.

In the present embodiment, each pixel may include a thin film transistor electrically connected to the first electrode.

In this embodiment, the metal layer is made of at least one of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) And Ce (cesium).

In this embodiment, the barrier layer may contain fluoride.

In the present embodiment, the fluoride may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

In this embodiment, the barrier layer may contain an oxide.

In the present embodiment, the oxide may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

The barrier layer may contain a halogen compound. In this embodiment, the second electrode may contain a larger amount of Ag than Mg, on a weight percent basis.

In this embodiment, the metal layer may be disposed closer to the second electrode than the barrier layer, and may be in contact with the second electrode.

In this embodiment, the barrier layer may be disposed closer to the second electrode than the metal layer.

The organic light emitting device of the present invention may further include a buffer layer disposed between the second electrode and the organic light emitting layer.

In this embodiment, the buffer layer may be disposed closer to the organic light emitting layer than the metal layer and the barrier layer.

In this embodiment, the buffer layer may contain fluoride.

In the present embodiment, the fluoride may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

In this embodiment, the buffer layer may contain an oxide.

In the present embodiment, the oxide may include any one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

In this embodiment, the buffer layer may contain chloride.

In this embodiment, the chloride may include RbCl.

In this embodiment, the buffer layer may contain an organic material.

Another embodiment of the present invention relates to an organic light emitting diode display having a plurality of pixels, wherein each pixel of the plurality of pixels includes a first electrode, a second electrode disposed above the first electrode and containing Ag and Mg, An organic light emitting layer disposed between the first electrode and the second electrode, and a mixed layer disposed between the organic light emitting layer and the second electrode and containing a metal material and a barrier material.

In this embodiment, the metal layer is made of at least one of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) And Ce (cesium).

In this embodiment, the barrier material may contain a fluoride.

In the present embodiment, the fluoride may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

In this embodiment, the barrier material may contain an oxide.

In the present embodiment, the oxide may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

In this embodiment, the barrier material may contain a halogen compound.

In this embodiment, the mixed layer may be formed so that the barrier material is larger than the metal material on a weight basis.

The organic light emitting device of the present invention may further include a buffer layer disposed between the second electrode and the organic light emitting layer.

In this embodiment, the buffer layer may be disposed closer to the organic light emitting layer than the mixed layer.

In this embodiment, the buffer layer may contain fluoride.

In the present embodiment, the fluoride may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

In this embodiment, the buffer layer may contain an oxide.

In the present embodiment, the oxide may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

In this embodiment, the buffer layer may contain chloride.

In this embodiment, the chloride may include RbCl.

In this embodiment, the buffer layer may contain an organic material.

Other aspects, features, and advantages will become apparent from the following drawings, claims, and detailed description of the invention.

The organic light emitting display device according to the present embodiment can easily improve the electrical characteristics.

1 is a schematic cross-sectional view illustrating an organic light emitting display device according to an embodiment of the present invention.
Fig. 2 is a schematic sectional view showing a modification of Fig. 1. Fig.
3 is a schematic cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention.
4 is a schematic cross-sectional view showing a modification of Fig.
5 is a schematic cross-sectional view illustrating an organic light emitting display according to another embodiment of the present invention.
6 is a schematic cross-sectional view showing a modified example of Fig.
7 is a schematic cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention.
8 is a schematic cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention.
Fig. 9 is a schematic sectional view showing a modification of Fig. 8. Fig.
10 is a schematic cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention.
11 is a schematic cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention.
12 is an enlarged view of F in Fig.
13 is a schematic sectional view showing a modification of Fig.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and methods of achieving them will be apparent with reference to the embodiments described in detail below with reference to the drawings. However, the present invention is not limited to the embodiments described below, but may be implemented in various forms.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like or corresponding components throughout the drawings, and a duplicate description thereof will be omitted .

In the following embodiments, the terms first, second, and the like are used for the purpose of distinguishing one element from another element, not the limitative meaning.

In the following examples, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise.

In the following embodiments, terms such as inclusive or possessive are intended to mean that a feature, or element, described in the specification is present, and does not preclude the possibility that one or more other features or elements may be added.

In the following embodiments, when a part of a film, an area, a component or the like is on or on another part, not only the case where the part is directly on the other part but also another film, area, And the like.

In the drawings, components may be exaggerated or reduced in size for convenience of explanation. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to those shown in the drawings.

If certain embodiments are otherwise feasible, the particular process sequence may be performed differently from the sequence described. For example, two processes that are described in succession may be performed substantially concurrently, and may be performed in the reverse order of the order described.

1 is a schematic cross-sectional view illustrating an organic light emitting display device according to an embodiment of the present invention.

1, an OLED display 100 according to an exemplary embodiment of the present invention includes a first electrode 110, a second electrode 130, an organic light emitting layer 122, a barrier layer 125, (127).

The substrate 101 may be made of a transparent glass material. The substrate 101 may be made of a transparent plastic material or a flexible material such as a metal thin film.

A first electrode 110 and a second electrode 130 are formed on a substrate 101. The organic light emitting layer 122 is disposed between at least the first electrode 110 and the second electrode 130. Although not shown, the positions of the first electrode 110 and the second electrode 130 may be reversed. That is, the first electrode 110 may be disposed above the second electrode 130. When the first electrode 110 is disposed above the second electrode 130, the stacking order of the members therebetween is also changed.

It goes without saying that the present embodiment may also arrange the members directly on the first electrode 110 without the substrate 101 being omitted.

The first electrode 110 may function as an anode. When the first electrode 110 functions as an anode, the first electrode 110 may include ITO, IZO, ZnO, or In 2 O 3 having a high work function. The first electrode 110 may further include a reflective layer formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Yb or Ca according to the object and design conditions.

The organic light emitting layer 122 is disposed between the first electrode 110 and the second electrode 130. Specifically, when a voltage is applied to the first electrode 110 and the second electrode 130, visible light is emitted from the organic light emitting layer 122 through recombination of holes and electrons, Occurs.

The organic light emitting layer 122 may contain various materials, for example, a host and a dopant. The dopant contains a fluorescent dopant or phosphorescent dopant.

The second electrode 130 may be a cathode. The second electrode 130 contains AgMg. That is, the second electrode 130 contains Ag (silver) and Mg (magnesium). In particular, the second electrode 130 contains Ag as a main element and Mg as a sub element. For example, the second electrode 130 is formed to contain Ag more than Mg based on the weight percent (wt%).

As the second electrode 130 contains Ag as a main component, the light absorption of the second electrode 130 is minimized and the light reflection and light transmission characteristics are improved. Thereby improving the optical characteristics of the organic light emitting diode display 100 through the light resonance in the space between the first electrode 110 and the second electrode 130. As the second electrode 130 contains Ag as a main component, the optical characteristics of the second electrode 130 can be secured even if the thickness of the second electrode 130 is minimized. Also, the resistance of the second electrode 130 is reduced to effectively maintain the electrical characteristics of the second electrode 130.

The second electrode 130 may have a thickness of, for example, 30 angstroms to 300 angstroms.

The metal layer 127 is disposed between the second electrode 130 and the organic light emitting layer 122. The metal layer 127 is formed of a material selected from the group consisting of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) Cesium). ≪ / RTI > Since the metal materials contained in the metal layer 127 are low in work function, the electron injection characteristics from the second electrode 130 to the organic light emitting layer 122 are improved. Particularly, the difference in work function for electron injection into the organic light emitting layer 122 through the second electrode 130 may be large as the second electrode 130 is made of Ag as a main material. The material contained in the metal layer 127 Electrons can easily flow from the second electrode 130 toward the metal layer 127 because the work function of the metal layer 127 is not large. Particularly, in this embodiment, the metal layer 127 is in contact with the second electrode 130 so that the flow of electrons from the second electrode 130 to the metal layer 127 and the flow of electrons from the metal layer 127 to the organic light- Thereby improving the characteristics of the electron flow of the electron beam.

The metal layer 127 can be formed using various methods, for example, a vapor deposition method.

The metal layer 127 is formed to have a thickness of 5 angstroms to 50 angstroms.

The barrier layer 125 is formed between the second electrode 130 and the organic light emitting layer 122 and the barrier layer 125 is disposed between the metal layer 127 and the organic light emitting layer 122, for example.

The barrier layer 125 contains a barrier material, for example LiF. The barrier layer 125 blocks migration of metal material, particularly Ag, of the second electrode 130. The barrier layer 125 firstly blocks the movement of Ag of the second electrode 130 to the organic light emitting layer 122 and secondarily stops the movement of the first electrode 110 of Ag of the second electrode 130, .

The barrier layer 125 may comprise a variety of materials. That is, the LiF contained in the barrier layer 125 is illustrative and may include various fluorides. Specifically, the barrier layer 125 may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

As another optional embodiment, the barrier layer 125 may contain an oxide. For example, the barrier layer 125 may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

As another optional embodiment, the barrier layer 125 may contain a halogen compound. For example, the barrier layer 125 may comprise RbBr, RbI or RbCl.

Ag or Mg, particularly Ag, which is a metal material of the second electrode 130 is applied to the first electrode 110 and the second electrode 130 when the voltage is applied to the organic light emitting display 100, 110). At this time, short-circuit failure occurs between the first electrode 110 and the second electrode 130 when the Ag material reaches the first electrode. If such a short-circuiting occurs between the first electrode 110 and the second electrode 130, the organic light-emitting layer 122 disposed between the first electrode 110 and the second electrode 130 may fail to emit light .

The barrier layer 125 is disposed between the second electrode 130 and the first electrode 110, particularly the second electrode 130, and the organic light emitting layer 122. The metal material of the second electrode 130 is prevented from moving toward the first electrode 110 through the barrier layer 125 and reaching the first electrode 110, The organic light emitting layer 122 is prevented from reaching the interface or inside of the organic light emitting layer 122 to prevent abnormal emission or non-emission of the organic light emitting layer 122, do.

The thickness of the barrier layer 125 is formed to be 5 angstroms to 50 angstroms.

The organic light emitting diode display 100 of the present embodiment includes Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium And a metal layer 127 including at least one selected from the group consisting of Tb (tantalum), Ba (barium), La (lanthanum), and Ce The organic light emitting display device 100 according to the present invention can easily realize the organic light emitting display device 100 with high efficiency.

Particularly, the second electrode 130 of the present embodiment contains Ag as a main component so as to improve optical characteristics, and the work function difference between the second electrode 130 and the adjacent layer, for example, the organic light emitting layer 122 becomes large, The electron injection characteristic from the electrode 130 to the organic light emitting layer 122 may be reduced. In this embodiment, between the second electrode 130 and the organic light emitting layer 122, a material Yb (Ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium), La (lanthanum) A metal layer 127 including at least one selected is disposed to block such a problem.

In the present embodiment, the barrier layer 125 contains various oxides, fluorides or halogen compounds, and the barrier layer 125 is disposed between the second electrode 130 and the organic light emitting layer 122. The second electrode 130 prevents the metal material from moving through the barrier layer 125 to suppress the short-circuit between the first electrode 110 and the second electrode 130 and the abnormal light emission of the organic light-emitting layer 122. In particular, since the oxide, fluoride or halogen compound contained in the barrier layer 125 may contain a strong covalent bond material, diffusion of the metal material of the second electrode 130 is not easy. Thereby blocking the metallic material of the second electrode 130 from crossing the barrier layer 125.

As a result, the organic light emitting diode display 100 of the present embodiment has improved optical characteristics and electrical characteristics.

Fig. 2 is a schematic sectional view showing a modification of Fig. 1. Fig.

For convenience of explanation, the description will be focused on the differences from the embodiment of FIG. 1 described above. Like reference numerals refer to like elements, and a detailed description thereof will be omitted.

Referring to FIG. 2, the OLED display 100 'further includes a buffer layer 128 as compared with the OLED display 100 of FIG.

The buffer layer 128 is disposed between the second electrode 130 and the organic light emitting layer 122. The buffer layer 128 is disposed closer to the organic light emitting layer 122 than the barrier layer 125 and the metal layer 127. That is, the buffer layer 128 is disposed between the organic light emitting layer 122 and the barrier layer 125.

The buffer layer 128 may include various materials. Specifically, the buffer layer 128 may include fluoride, and may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3 .

As another optional embodiment, the buffer layer 128 may contain an oxide. For example, the buffer layer 128 may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

As another optional embodiment, the buffer layer 128 may contain chloride. For example, the buffer layer 128 may comprise RbCl.

As another optional embodiment, the buffer layer 128 may contain organic material. For example, compounds represented by the following chemical formula 1.

≪ Formula 1 >

Wherein L ₁ and L ₂ are, independently of each other,

Substituted or unsubstituted C ₃ -C ₁₀ cycloalkylene, a substituted or unsubstituted C ₃ -C ₁₀ heterocycloalkyl alkylene, substituted or unsubstituted C ₃ -C ₁₀ cycloalkyl alkenylene, substituted or unsubstituted C ₃ -C ₁₀ heterocycloalkyl alkenylene, substituted or unsubstituted C ₆ -C ₆₀ arylene, a substituted or unsubstituted C ₂ -C ₆₀ heteroarylene, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group (substituted aromatic unsubstituted divalent non-aromatic condensed polycyclic group and a substituted or unsubstituted divalent non-aromatic heterocyclic polycyclic group,

The substituted C ₃ -C ₁₀ cycloalkylene, substituted C ₃ -C ₁₀ hetero cycloalkylene, substituted C ₃ -C ₁₀ cycloalkyl alkenylene, substituted C ₃ -C ₁₀ heterocycloalkyl alkenylene, substituted C ₆ -C ₆₀ arylene, substituted C ₂ -C ₆₀ heteroarylene, substituted divalent non-aromatic condensed polycyclic group, and a substituted divalent non-aromatic hydrocarbon ring condensed at least one substituent of the polycyclic group,

C ₁ -C ₆ alkyl, C ₂ -C ₆ alkoxy, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acids and salts thereof, ₆₀ alkenyl, C ₂ -C ₆₀ alkynyl and C ₁ -C ₆₀ alkoxy;

Deuterium, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazines, hydrazones, carboxyl and salts thereof, acid and salts thereof, phosphoric acid and salts thereof, C ₃ -C ₁₀ cycloalkyl, C ₃ - C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ heterocycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy, C ₆ -C ₆₀ arylthio (arylthio), C ₂ -C ₆₀ heteroaryl group, a non-condensed polycyclic aromatic group (non-condensed polycyclic aromatic group), non-aromatic heterocyclic condensed polycyclic _{group, -N (Q 1) (Q} 2), -Si (Q _{3) (Q 4) (Q} 5) and _{-B (Q 6) (Q 7} ) of the at least one a, C ₁ -C ₆₀ alkyl, C ₂ -C ₆₀ alkenyl, C ₂ -C ₆₀ substituted alkynyl, and C ₁ -C ₆₀ alkoxy;

C ₃ -C ₁₀ cycloalkyl, C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ heterocycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy , C ₆ -C ₆₀ arylthio, C ₂ -C ₆₀ heteroaryl, non-aromatic condensed polycyclic groups and non-aromatic heterocyclic polycyclic groups;

C ₁ -C ₆ alkyl, C ₂ -C ₆ alkoxy, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acids and salts thereof, ₆₀ alkenyl, C ₂ -C ₆₀ alkynyl, C ₁ -C ₆₀ alkoxy, C ₃ -C ₁₀ cycloalkyl, C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ hetero cycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy, C ₆ -C ₆₀ arylthio, C ₂ -C ₆₀ heteroaryl group, a non-condensed polycyclic aromatic group, non-aromatic heterocyclic group condensed polycyclic _{, -N (Q 11) (Q} 12), -Si (Q 13) (Q 14) (Q 15) and _{-B (Q 16) (Q 17} ) of the at least one substituted, C ₃ -C ₁₀ cycloalkyl , C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ heterocycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy, C ₆ -C ₆₀ aryl Thio, C ₂ -C ₆₀ heteroaryl, non-aromatic condensed polycyclic groups and non-aromatic heterocyclic polycyclic groups; And

_{-N (Q 21) (Q 22} ), -Si (Q 23) (Q 24) (Q 25) and _{-B (Q 26) (Q 27} ); .

For example, L < _{1 >} and L < ₂ > in the formula (1)

And examples thereof include phenylene, pentalenylene, indenylene, naphthylene, azulenylene, heptalenylene, indacenylene, acenaphthylene, acenaphthylene, fluorenylene, spiro-fluorenylene, benzofluorenylene, dibenzofluoranenylene, phenalenylene, phenanthrenylene, anthracenylene, fluoro But are not limited to, fluoranthenylene, triphenylenylene, pyrenylene, chrysenylene, naphthacenylene, picenylene, perylenylene, But are not limited to, pentaphenylene, hexacenylene, pentacenylene, rubicenylene, coronenylene, ovalenylene, pyrrolylene, thiophenyl Thiophenylene, furanylene, imida The present invention relates to a process for producing a polyol (hereinafter referred to as " polyol "), a polyol, a polyol, a polyol, a polyol, a polyol, a polyol, a polyol, pyrazinylene, pyrimidinylene, pyridazinylene, isoindolylene, indolylene, indazolylene, purinylene, quinolinylene, quinolinylene, , Isoquinolinylene, benzoquinolinylene, phthalazinylene, naphthyridinylene, quinoxalinylene, quinazolinylene, cyinolinylene, the present invention relates to a process for producing a cinnolinyl derivative of the general formula (1), wherein the cinnolinylene, carbazolylene, phenanthridinylene, acridinylene, phenanthrolinylene, phenazinylene, benzoimidazolylene, (benzofuranylene), There may be mentioned benzothiophenylene, isobenzothiazolylene, benzooxazolylene, isobenzooxazolylene, triazolylene, tetrazolylene, oxadiene, Oxadiazolylene, triazinylene, dibenzofuranylene, dibenzothiophenylene, benzocarbazolyl, and dibenzocarbazolyl; and the like; And

C ₁ -C ₂₀ alkyl, C ₁ -C ₈ alkyl, C ₁ -C ₈ alkoxy, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acid and its salts, ₂₀ alkoxy, cyclopentyl, cyclohexyl, cycloheptyl, cyclopentenyl, cyclohexenyl, phenyl, pental alkylenyl, indenyl, naphthyl, azulenyl, heptal alkylenyl, indazol hexenyl, acetoxy-naphthyl, fluorenyl, spy Fluorenyl, triphenylenyl, pyrenyl, crycenyl, naphthacenyl, picenyl, perylenyl, phenanthryl, phenanthrenyl, phenanthrenyl, anthracenyl, fluoranthenyl, , Pentaphenyl, hexacenyl, pentacenyl, rubicenyl, coronenyl, ovalenyl, pyrroyl, thiophenyl, furanyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl , Pyridinyl, pyrazinyl, pyrimidinyl, pyridazinyl, isoindolyl, indolyl, inda Wherein R is selected from the group consisting of hydrogen, alkyl, alkenyl, alkynyl, alkynyl, alkynyl, alkynyl, alkynyl, alkynyl, alkynyl, alkynyl, alkynyl, Benzothiophenyl, isobenzothiazolyl, benzooxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, oxadiazolyl, triazinyl, dibenzofuyl, benzothiophenyl, Naphthylene, azulenylene, heptalenylene, indacenylene, acenaphthylene, phenanthrene, phenanthrenylene, indenylene, naphthylene, substituted naphthylene, Phenylene, phenanthrenylene, anthracenylene, fluoranthenylene, triphenylenylene, pyrenylene, chrysinylene, fluorenylene, spiro-fluorenylene, benzofluorenylene, dibenzofluorrenehenylene, phenanthrenylene, Naphthacenylene, picenylene, perylenylene, penta Substituted or unsubstituted heterocyclic rings, such as naphthylene, naphthylene, naphthylene, naphthylene, naphthylene, naphthylene, naphthylene, naphthylene, Examples of the organic group include a benzofuranyl group, a benzofuranyl group, a benzofuranyl group, a benzofuranyl group, a benzofuranyl group, a benzofuranyl group, a benzofuranyl group, a benzofuranyl group, a benzofuranyl group, a benzofuranyl group, Benzenimidazolyl, benzoimidazolyl, benzoimidazolyl, benzoimidazolyl, benzoimidazolyl, benzoimidazolyl, benzoimidazolyl, benzoimidazolyl, benzoimidazolyl, benzoimidazolyl, benzoimidazolyl, benzoimidazolyl, benzoimidazolyl, benzoimidazolyl, Benzothiophenylene, benzothiophenylene, furanylene, benzothiophenylene, isobenzothiazolylene, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolylene, oxadiazolylene, triazienylene, dibenzofuranyl, dibenzothiophene Phenylene, benzocarbazolyl, and dibenzocarbazolyl; ≪ / RTI >

According to another embodiment, L < 1 _> and L < ₂ > in the formula (1) may be independently represented by one of the following formulas (3-1) to (3-32)

Of the above-mentioned formulas (3-1) to (3-32)

Z ₁ and Z ₂ are each independently of the other hydrogen, deuterium, halogen atom, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acid and its salts, , C ₁ -C ₂₀ alkyl, C ₁ -C ₂₀ alkoxy, phenyl, naphthyl, fluorenyl, spiro-fluorenyl, benzofluorenyl, dibenzofluorenyl, phenanthrenyl, anthracenyl, Is selected from the group consisting of hydrogen, alkyl, alkenyl, alkynyl, alkynyl, alkynyl, alkynyl, alkynyl,

d1 is selected from integers from 1 to 4;

d2 is selected from integers from 1 to 3;

d3 is selected from integers from 1 to 6;

d4 is selected from integers from 1 to 8;

d5 is 1 or 2;

and d6 is selected from an integer of 1 to 5.

According to another embodiment, L ₁ and L ₂ in formula (1) may be independently represented by one of the following formulas (4-1) to (4-25), but are not limited thereto:

In the formula 1 as a1 is shown the number of L _1, 0, it is selected from 1, 2 and 3. If a1 is zero, then R ₁ is directly connected to N. When a1 is 2 or more, a plurality of L < ₁ > may be the same as or different from each other. For example, a1 may be 0 or 1.

A2 in the formula (1) represents the number of L ₂ , and is selected from 0, 1, 2 and 3. When a2 is zero, R ₂ is directly connected to N. When a2 is 2 or more, a plurality of L < ₂ > may be the same as or different from each other. For example, a2 may be 0 or 1.

Wherein R ₁ and R ₂ are independently of each other,

C ₃ -C ₁₀ cycloalkyl, C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ heterocycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy , C ₆ -C ₆₀ arylthio, C ₂ -C ₆₀ heteroaryl, non-aromatic condensed polycyclic groups and non-aromatic heterocyclic polycyclic groups; And

C ₁ -C ₆ alkyl, C ₂ -C ₆ alkoxy, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acids and salts thereof, ₆₀ alkenyl, C ₂ -C ₆₀ alkynyl, C ₁ -C ₆₀ alkoxy, C ₃ -C ₁₀ cycloalkyl, C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ hetero cycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy, C ₆ -C ₆₀ arylthio, C ₂ -C ₆₀ heteroaryl group, a non-condensed polycyclic aromatic group, non-aromatic heterocyclic group condensed polycyclic _{, -N (Q 31) (Q} 32), -Si (Q 33) (Q 34) (Q 35) and -B (Q ₃₆₎ substituted, C ₃ -C ₁₀ cycloalkyl, at least one of the (Q ₃₇₎ , C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ heterocycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy, C ₆ -C ₆₀ aryl Thio, C ₂ -C ₆₀ heteroaryl, non-aromatic condensed polycyclic groups and non-aromatic heterocyclic polycyclic groups; .

For example, R < ₁ > and R < ₂ &

But are not limited to, phenyl, pentalenyl, indenyl, naphthyl, azulenyl, heptalenyl, indacenyl, acenaphthyl, But are not limited to, fluorenyl, spiro-fluorenyl, benzofluorenyl, dibenzofluorenyl, phenalenyl, phenanthrenyl, anthracenyl, fluoranthenyl, But are not limited to, triphenylenyl, pyrenyl, chrysenyl, naphthacenyl, picenyl, perylenyl, pentaphenyl, hexacenyl, But are not limited to, pentacenyl, rubicenyl, coronenyl, ovalenyl, pyrrolyl, thiophenyl, furanyl, imidazolyl, Pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isooxazolyl, pyridinyl, pyridyl, pyrimidinyl, Pyrazinyl, pyrimidinyl, pyridazinyl, isoindolyl, indolyl, indazolyl, purinyl, quinolinyl, pyrimidinyl, , Isoquinolinyl, benzoquinolinyl, phthalazinyl, naphthyridinyl, quinoxalinyl, quinazolinyl, cinnolinyl, ), Carbazolyl, phenanthridinyl, acridinyl, phenanthrolinyl, phenazinyl, benzoimidazolyl, benzofuranyl, benzofuranyl, Benzothiophenyl, isobenzothiazolyl, benzooxazolyl, isobenzooxazolyl, triazolyl, tetrazolyl, oxadiazolyl, triaryl, triazolyl, Triazinyl, dibenzofuranyl, dibenzothiophene, yl), benzocarbazolyl and dibenzocarbazolyl; And

C ₁ -C ₂₀ alkyl, C ₁ -C ₈ alkyl, C ₁ -C ₈ alkoxy, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acid and its salts, _20-alkoxy, phenyl, pental alkylenyl, indenyl, naphthyl, azulenyl, heptal alkylenyl, indazol hexenyl, acetoxy-naphthyl, fluorenyl, a spy-fluorenyl, benzo fluorenyl, dibenzo fluorenyl, Naphthacenyl, picenyl, perylenyl, pentaphenyl, hexacenyl, pentacenyl, rubicenyl, coronenyl, naphthyl, phenanthrenyl, phenanthrenyl, anthracenyl, fluoranthenyl, triphenylenyl, Pyrimidinyl, pyridazinyl, isoindole, pyrimidinyl, pyrimidinyl, pyrimidinyl, pyrimidinyl, pyrimidinyl, imidazolyl, isothiazolyl, isoxazolyl, isoxazolyl, isoxazolyl, Yl, indolyl, indazolyl, purinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, Benzothiophenyl, isobenzothiazole, benzothiophenyl, benzothiophene, benzothiophene, benzothiophene, benzothiophene, benzothiophene, benzothiophene, benzothiophene, Substituted phenyl substituted with at least one of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, isobutyl, isobutyl, isobutyl, benzyloxycarbonyl, benzooxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, oxadiazolyl, triazinyl, dibenzofuranyl, dibenzothiophenyl, Phenanthrenyl, indenyl, naphthyl, azulenyl, heptalenyl, indacenyl, acenaphthyl, fluorenyl, spiro-fluorenyl, benzofluorenyl, dibenzofluorenyl, phenalenyl, Naphthyl, naphthyl, anthracenyl, fluoranthenyl, triphenylenyl, pyrenyl, klycenyl, naphthacenyl, picenyl, perylenyl, pentaphenyl, hexacenyl, pentacenyl, rubicenyl, Pyrrolyl, thiophenyl, furanyl, imidazolyl, pyrazolyl, thiazolyl, Isoindolyl, indolyl, indazolyl, pyridinyl, quinolinyl, isoquinolinyl, benzoquinolyl, isoquinolyl, isoquinolyl, isoquinolyl, Benzoimidazolyl, benzofuranyl, benzoyl, phenanthridinyl, phenanthridinyl, phenanthridinyl, phenazinyl, benzothiazolyl, benzoimidazolyl, benzofuranyl, benzothiazolyl, Thiophenyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, oxadiazolyl, triazinyl, dibenzofuranyl, dibenzothiophenyl, benzocarbazolyl and dibenzocarbazolyl; , But is not limited thereto.

As another example, R ₁ and R ₂ in the above formula (1)

And examples thereof include phenyl, naphthyl, fluorenyl, spiro-fluorenyl, benzofluorenyl, dibenzofluorenyl, phenanthrenyl, anthracenyl, pyrenyl, And examples thereof include pyridinyl, pyrazinyl, pyrimidinyl, pyridazinyl, quinolinyl, isoquinolinyl, quinoxalinyl, quinazolinyl quinazolinyl, carbazolyl and triazinyl; And

C ₁ -C ₂₀ alkyl, C ₁ -C ₈ alkyl, C ₁ -C ₈ alkoxy, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acid and its salts, _{Wherein R is} selected from the group consisting of hydrogen, alkyl, alkoxy, phenyl, naphthyl, fluorenyl, spiro-fluorenyl, benzofluorenyl, dibenzofluorenyl, phenanthrenyl, anthracenyl, pyrenyl, Phenyl, naphthyl, fluorenyl, spiro, substituted with at least one substituent selected from the group consisting of phenyl, naphthyl, pyridazinyl, pyridazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinazolinyl, A heterocyclic group such as a fluorenyl, a fluorenyl, a benzofluorenyl, a dibenzofluorenyl, a phenanthrenyl, an anthracenyl, a pyrenyl, a klycenyl, a pyridinyl, a pyrazinyl, a pyrimidinyl, a pyridazinyl, a quinolinyl, Naphthyl, quinoxalinyl, quinazolinyl, carbazolyl and triazinyl; , But is not limited thereto.

In the formula (1), R ₁₁ to R ₁₄ independently represent,

C ₁ -C ₆ alkyl, C ₂ -C ₆ alkoxy, C ₁ -C ₆ alkoxy, halogen, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acids and salts thereof, -C ₆₀ alkenyl, C ₂ -C ₆₀ alkynyl and C ₁ -C ₆₀ alkoxy;

Deuterium, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazines, hydrazones, carboxyl and salts thereof, acid and salts thereof, phosphoric acid and salts thereof, C ₃ -C ₁₀ cycloalkyl, C ₃ - C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ hetero cycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy, C ₆ -C ₆₀ arylthio, C ₂ -C ₆₀ heteroaryl group, a non-condensed polycyclic aromatic group, non-aromatic heterocyclic condensed polycyclic _{group, -N (Q 41) (Q} 42), -Si (Q 43) (Q 44) (Q 45) and -B ( Q ₄₆₎ (Q ₄₇₎ of the at least one substituted, C ₁ -C ₆₀ alkyl, C ₂ -C ₆₀ alkenyl, C ₂ -C ₆₀ alkynyl and C ₁ -C ₆₀ alkoxy;

C ₃ -C ₁₀ cycloalkyl, C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ heterocycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy , C ₆ -C ₆₀ arylthio, C ₂ -C ₆₀ heteroaryl, non-aromatic condensed polycyclic groups and non-aromatic heterocyclic polycyclic groups;

C ₁ -C ₆ alkyl, C ₂ -C ₆ alkoxy, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acids and salts thereof, ₆₀ alkenyl, C ₂ -C ₆₀ alkynyl, C ₁ -C ₆₀ alkoxy, C ₃ -C ₁₀ cycloalkyl, C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ hetero cycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy, C ₆ -C ₆₀ arylthio, C ₂ -C ₆₀ heteroaryl group, a non-condensed polycyclic aromatic group, non-aromatic heterocyclic group condensed polycyclic _{, -N (Q 51) (Q} 52), -Si (Q 53) (Q 54) (Q 55) and -B (Q ₅₆₎ substituted, C ₃ -C ₁₀ cycloalkyl, at least one of the (Q ₅₇₎ , C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ heterocycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy, C ₆ -C ₆₀ aryl Thio, C ₂ -C ₆₀ heteroaryl, non-aromatic condensed polycyclic groups and non-aromatic heterocyclic polycyclic groups; And

- Q (Q ₆₁ ) (Q ₆₂ ), -Si (Q ₆₃ ) (Q ₆₄ ) (Q ₆₅ ), and -B (Q ₆₆ ) (Q ₆₇ ); ≪ / RTI >

In the present specification, Q ₁ to Q ₇ , Q ₁₁ to Q ₁₇ , Q ₂₁ to Q ₂₇ , Q ₃₁ to Q ₃₇ , Q ₄₁ to Q ₄₇ , Q ₅₁ to Q ₅₇ and Q ₆₁ to Q ₆₇ ,

C ₁ -C ₆ alkyl, C ₂ -C ₆ alkoxy, C ₁ -C ₆ alkoxy, halogen, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acids and salts thereof, -C ₆₀ alkenyl, C ₂ -C ₆₀ alkynyl and C ₁ -C ₆₀ alkoxy;

Deuterium, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazines, hydrazones, carboxyl and salts thereof, acid and salts thereof, phosphoric acid and salts thereof, C ₃ -C ₁₀ cycloalkyl, C ₃ - C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ hetero cycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy, C ₆ -C ₆₀ arylthio, C ₂ -C ₆₀ heteroaryl group, a non-condensed polycyclic aromatic groups and non-fused polycyclic aromatic heterocyclic group substituted by at least one of, C ₁ -C ₆₀ alkyl, C ₂ -C ₆₀ alkenyl, C ₂ -C ₆₀ alkynyl, and C ₁ -C ₆₀ alkoxy;

C ₃ -C ₁₀ cycloalkyl, C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ heterocycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy , C ₆ -C ₆₀ arylthio, C ₂ -C ₆₀ heteroaryl, non-aromatic condensed polycyclic groups and non-aromatic heterocyclic polycyclic groups; And

C ₁ -C ₆ alkyl, C ₂ -C ₆ alkoxy, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acids and salts thereof, ₆₀ alkenyl, C ₂ -C ₆₀ alkynyl, C ₁ -C ₆₀ alkoxy, C ₃ -C ₁₀ cycloalkyl, C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ hetero cycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy, C ₆ -C ₆₀ arylthio, C ₂ -C ₆₀ heteroaryl group, a non-condensed polycyclic aromatic groups and non-aromatic heterocyclic group condensed polycyclic C ₃ -C ₁₀ cycloalkyl, C ₃ -C ₁₀ heterocycloalkyl, C ₃ -C ₁₀ cycloalkenyl, C ₃ -C ₁₀ heterocycloalkenyl, C ₆ -C ₆₀ aryl, C ₆ -C ₆₀ aryloxy, C ₆ -C ₆₀ arylthio, C ₂ -C ₆₀ heteroaryl group, a non-condensed polycyclic aromatic groups and non-aromatic heterocyclic group, fused polycyclic; .

For example, R < ₁₁ > to R < ₁₄ >

C ₁ -C ₂₀ alkyl, and C ₁ -C ₂₀ alkyl, which are optionally substituted with one or more substituents selected from the group consisting of hydrogen, deuterium, halogen atoms, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, -C ₂₀ alkoxy;

And examples thereof include phenyl, naphthyl, fluorenyl, spiro-fluorenyl, benzofluorenyl, dibenzofluorenyl, phenanthrenyl, anthracenyl, pyrenyl, And examples thereof include pyridinyl, pyrazinyl, pyrimidinyl, pyridazinyl, quinolinyl, isoquinolinyl, quinoxalinyl, quinazolinyl quinazolinyl, carbazolyl and triazinyl; And

C ₁ -C ₂₀ alkyl, C ₁ -C ₈ alkyl, C ₁ -C ₈ alkoxy, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acid and its salts, _{Wherein R is} selected from the group consisting of hydrogen, alkyl, alkoxy, phenyl, naphthyl, fluorenyl, spiro-fluorenyl, benzofluorenyl, dibenzofluorenyl, phenanthrenyl, anthracenyl, pyrenyl, Phenyl, naphthyl, fluorenyl, spiro, substituted with at least one substituent selected from the group consisting of phenyl, naphthyl, pyridazinyl, pyridazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinazolinyl, A heterocyclic group such as a fluorenyl, a fluorenyl, a benzofluorenyl, a dibenzofluorenyl, a phenanthrenyl, an anthracenyl, a pyrenyl, a klycenyl, a pyridinyl, a pyrazinyl, a pyrimidinyl, a pyridazinyl, a quinolinyl, Naphthyl, quinoxalinyl, quinazolinyl, carbazolyl and triazinyl; , But is not limited thereto.

As another example, R ₁₁ to R ₁₄ in the general formula (1)

C ₁ -C ₂₀ alkyl and C ₁ -C ₂₀ alkoxy;

And examples thereof include phenyl, naphthyl, fluorenyl, spiro-fluorenyl, benzofluorenyl, dibenzofluorenyl, phenanthrenyl, anthracenyl, pyrenyl, And examples thereof include pyridinyl, pyrazinyl, pyrimidinyl, pyridazinyl, quinolinyl, isoquinolinyl, quinoxalinyl, quinazolinyl quinazolinyl, carbazolyl and triazinyl; And

C ₁ -C ₂₀ alkyl, C ₁ -C ₈ alkyl, C ₁ -C ₈ alkoxy, halogen, halogen, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxyl and salts thereof, sulfonic acid and its salts, _{Wherein R is} selected from the group consisting of hydrogen, alkyl, alkoxy, phenyl, naphthyl, fluorenyl, spiro-fluorenyl, benzofluorenyl, dibenzofluorenyl, phenanthrenyl, anthracenyl, pyrenyl, Phenyl, naphthyl, fluorenyl, spiro, substituted with at least one substituent selected from the group consisting of phenyl, naphthyl, pyridazinyl, pyridazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinazolinyl, A heterocyclic group such as a fluorenyl, a fluorenyl, a benzofluorenyl, a dibenzofluorenyl, a phenanthrenyl, an anthracenyl, a pyrenyl, a klycenyl, a pyridinyl, a pyrazinyl, a pyrimidinyl, a pyridazinyl, a quinolinyl, Naphthyl, quinoxalinyl, quinazolinyl, carbazolyl and triazinyl; ≪ / RTI >

In formula (1), b 1 represents the number of R ₁₁ , and is selected from 0, 1, 2, and 3. When b1 is 2 or more, a plurality of R < ₁₁ > may be the same or different from each other. For example, b1 may be 0 or 1, but is not limited thereto. For explanation of each of b2 to b4, refer to explanation in b1.

The buffer layers may be independently selected from the following compounds 1 to 11, but are not limited thereto.

As an alternative embodiment, the buffer layer 128 may include a compound selected from at least one of a condensed hydrocarbon compound (A), an electron donor dopant (B), and an organometallic complex (C) containing an alkali metal.

In the alternative embodiment, the electron donor dopant (B) may be at least one compound selected from the group consisting of an alkali metal, an alkaline earth metal, a rare earth metal, and an alkali metal compound. Wherein the alkali metal compound is at least one selected from the group consisting of an alkali metal oxide, an alkali metal halide, an alkaline earth metal oxide, an alkaline earth metal halide, an oxide of a rare earth metal, and a rare earth metal halide Lt; / RTI >

In the alternative embodiment, the condensed hydrocarbon compound (A) can be represented by any one of the following formulas (1) to (4). Ar ¹ to Ar ⁵ represent a condensed ring structure having 4 to 16 ring-forming carbon atoms which may have a substituent.

The organometallic complex (C) containing the alkali metal in the above-mentioned selective embodiment may be a compound represented by any one of the following formulas (10) to (12).

(In the formulas (10) to (12), M represents an alkali metal atom)

The buffer layer 128 prevents the conductive particles from diffusing from the second electrode 130 formed of a conductive material into the organic light emitting layer 122. In addition, the buffer layer 128 can improve the injection characteristics of electrons from the second electrode 130 to the organic light emitting layer 122, thereby improving the light efficiency of the organic light emitting layer 122.

In particular, the buffer layer 128 may be disposed adjacent to the organic light emitting layer 122, in which case the above effect is enhanced.

3 is a schematic cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention. 3, the OLED display 200 of the present embodiment includes a first electrode 210, a second electrode 230, an organic light emitting layer 222, a barrier layer 225, (227).

For convenience of explanation, the description will be focused on the differences from the above-described embodiment.

A first electrode 210 and a second electrode 230 are formed on a substrate 201. The material of the substrate 201 is the same as that of the above-described embodiment, and thus a detailed description thereof will be omitted.

The organic light emitting layer 222 is disposed between at least the first electrode 210 and the second electrode 230. Although not shown, the positions of the first electrode 210 and the second electrode 230 may be reversed. That is, the first electrode 210 may be disposed above the second electrode 230. When the first electrode 210 is disposed above the second electrode 230, the stacking order of the members therebetween is also changed.

The first electrode 210 functions as an anode. The material of the first electrode 210 is the same as that of the above-described embodiment, and thus a detailed description thereof will be omitted.

The organic light emitting layer 222 is disposed between the first electrode 210 and the second electrode 230.

The second electrode 230 contains AgMg. That is, the second electrode 230 contains Ag (silver) and Mg (magnesium). In particular, the second electrode 230 contains Ag as a main component and Mg as a sub-component. For example, the second electrode 230 is formed to contain Ag more than Mg based on the weight percent (wt%).

The barrier layer 225 contains a barrier material, for example LiF. The barrier layer 225 blocks migration of metal material, particularly Ag, of the second electrode 230. The barrier layer 225 prevents the first electrode 230 from blocking the movement of Ag to the organic light emitting layer 222 and secondarily shields the first electrode 210 of Ag of the second electrode 230, . Particularly, in this embodiment, since the barrier layer 225 contacts the second electrode 230, the movement of the metal material of the second electrode 230 is prevented from moving to the metal layer 227 beyond the barrier layer 225.

The barrier layer 225 may comprise a variety of materials. That is, the LiF contained in the barrier layer 225 is illustrative and may include various fluorides. Specifically, the barrier layer 225 may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

As another optional embodiment, the barrier layer 225 may contain an oxide. For example, the barrier layer 225 may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

As another optional embodiment, the barrier layer 225 may contain a halogen compound. For example, the barrier layer 225 may comprise RbBr, RbI or RbCl.

The metal layer 227 is disposed between the second electrode 230 and the organic light emitting layer 222 and the metal layer 227 is disposed between the barrier layer 225 and the organic light emitting layer 222, for example.

The metal layer 227 is made of a material selected from the group consisting of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) Cesium). ≪ / RTI > Since the metal materials contained in the metal layer 227 are low in work function, the electron injection characteristics from the second electrode 230 to the organic light emitting layer 222 are improved. Particularly, the work function difference between the second electrode 230 and the organic light emitting layer 222 may be large as the second electrode 230 is made of Ag. The materials contained in the metal layer 227 may be a metal Electrons can easily flow from the second electrode 230 toward the metal layer 227 and the electrons flow from the metal layer 227 to the organic light emitting layer 222 smoothly .

The metal layer 227 can be formed using various methods, for example, a deposition method.

The organic light emitting diode display 200 of the present embodiment includes a metal layer 227 between the second electrode 230 and the organic light emitting layer 222 to improve the electron injection characteristic of the organic light emitting layer 222 from the second electrode 230 So that the organic light emitting display 200 with high efficiency can be easily realized.

In this embodiment, the barrier layer 225 contains various oxides, fluorides or halogen compounds, and the barrier layer 225 is disposed between the second electrode 230 and the organic light emitting layer 222. The second electrode 230 prevents the movement of the metal material through the barrier layer 225 to suppress the short-circuit between the first electrode 210 and the second electrode 230 and the abnormal emission of the organic light-emitting layer 222.

In particular, the barrier layer 225 contacts the second electrode 230 to improve the barrier property to the metal material of the second electrode 230.

As a result, the organic light emitting diode display 200 of the present embodiment has improved optical characteristics and electrical characteristics.

4 is a schematic cross-sectional view showing a modification of Fig.

For the sake of convenience of explanation, the description will be focused on the differences from the embodiment of FIG. 3 described above. Like reference numerals refer to like elements, and a detailed description thereof will be omitted.

Referring to FIG. 4, the OLED display 200 'further includes a buffer layer 228 as compared with the OLED display 200 of FIG.

The buffer layer 228 is disposed between the second electrode 230 and the organic light emitting layer 222. The buffer layer 228 is disposed closer to the organic light emitting layer 222 than the barrier layer 225 and the metal layer 227. That is, the buffer layer 228 is disposed between the organic light emitting layer 222 and the metal layer 227.

The buffer layer 228 may include various materials. Specifically, the buffer layer 228 may include fluoride, and may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3 .

As another alternative embodiment, the buffer layer 228 may contain an oxide. For example, the buffer layer 228 may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

As another optional embodiment, the buffer layer 228 may contain chloride. For example, the buffer layer 228 may comprise RbCl.

As another optional embodiment, the buffer layer 228 may contain organic matter. Examples of specific organic substances are the same as those in the above-described embodiment.

The buffer layer 228 shields the conductive particles from diffusing from the second electrode 230 formed of a conductive material into the organic light emitting layer 222. Further, the buffer layer 228 can improve the injection characteristics of electrons from the second electrode 230 to the organic light emitting layer 222, thereby improving the light efficiency of the organic light emitting layer 222.

5 is a schematic cross-sectional view illustrating an organic light emitting display according to another embodiment of the present invention.

5, the OLED display 300 includes a first electrode 310, a second electrode 330, an organic light emitting layer 322, and a mixed layer 326 formed on a substrate 301 .

For convenience of explanation, the description will be focused on the differences from the above-described embodiment.

A first electrode 310 and a second electrode 330 are formed on a substrate 301. The material of the substrate 301 is the same as that of the above-described embodiment, and a detailed description thereof will be omitted.

The organic light emitting layer 322 is disposed between the first electrode 310 and the second electrode 330 at least. Although not shown, the positions of the first electrode 310 and the second electrode 330 may be reversed. That is, the first electrode 310 may be disposed above the second electrode 330. When the first electrode 310 is disposed above the second electrode 330, the stacking order of the members therebetween is also changed.

The first electrode 310 functions as an anode. The material for forming the first electrode 310 is the same as that of the above-described embodiment, and thus a detailed description thereof will be omitted.

The organic light emitting layer 322 is disposed between the first electrode 310 and the second electrode 330.

The second electrode 330 contains AgMg. That is, the second electrode 330 contains Ag (silver) and Mg (magnesium). In particular, the second electrode 330 contains Ag as a main component and Mg as a sub-component. For example, the second electrode 330 is formed to contain Ag more than Mg based on the weight percent (wt%).

The mixed layer 326 contains a barrier material and a metal material. The barrier material contains LiF. The barrier material contained in the mixed layer 326 may include various materials. That is, the LiF contained in the barrier material is illustrative and may include various fluorides. Specifically, the barrier material may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

As another optional embodiment, the barrier material may contain an oxide. For example, the barrier material may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

As another optional embodiment, the barrier material may contain a halogen compound. For example, the barrier material may comprise RbBr, RbI or RbCl.

The metal material is selected from the group consisting of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium), La (lanthanum) ≪ / RTI >

The mixed layer 326 contains a barrier material to block the migration of the metal material, particularly Ag, of the second electrode 330. That is, the barrier material of the mixed layer 326 primarily blocks the movement of Ag of the second electrode 330 to the organic light emitting layer 322, and secondarily stops the movement of Ag to the organic light emitting layer 322 of the second electrode 330, Lt; RTI ID = 0.0 > 310 < / RTI >

The mixed layer 326 may be formed of a material selected from the group consisting of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) Cesium) so that the electron injection characteristic from the second electrode 330 to the organic light emitting layer 322 is improved.

The organic light emitting display 300 of the present embodiment includes the mixed layer 326 and the mixed layer 326 includes Yb (ytterbium), Sm (samarium), Ca (yttrium) A metal material comprising at least one selected from the group consisting of Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium), La (lanthanum) do.

It is possible to prevent the movement of the metal material of the second electrode 330 while maintaining the thickness of the organic light emitting diode display 300 by including both the barrier material and the metal material in one layer of the mixed layer 326, Emitting property of the organic light-emitting layer 322 is improved.

At this time, the mixed layer 326 makes the barrier material more than the metal material based on the weight ratio (wt%). For example, the mixed layer 326 contains a barrier material and a metal material at a ratio of 7: 3 on a weight basis. Since the mixed layer 326 is formed as one layer, the barrier material is made to be larger than the metal material so as to maintain the reduction in the barrier property.

6 is a schematic cross-sectional view showing a modified example of Fig.

For the sake of convenience of explanation, the description will be focused on the differences from the embodiment of FIG. Like reference numerals refer to like elements, and a detailed description thereof will be omitted.

Referring to FIG. 6, the OLED display 300 'further includes a buffer layer 328 as compared with the OLED display 300 of FIG.

The buffer layer 328 is disposed between the second electrode 330 and the organic light emitting layer 322. Further, the buffer layer 328 is disposed closer to the organic light emitting layer 322 than the mixed layer 326. That is, the buffer layer 328 is disposed between the organic light emitting layer 322 and the mixed layer 326.

The buffer layer 328 may include various materials, and specific materials such as fluoride, oxide, chloride, or organic material are the same as those of the above-described embodiments, and thus a detailed description thereof will be omitted.

The buffer layer 328 prevents the conductive particles from diffusing from the second electrode 330 formed of a conductive material into the organic light emitting layer 322. In addition, the buffer layer 328 can improve the injection characteristics of electrons from the second electrode 330 to the organic light emitting layer 322, thereby improving the light efficiency of the organic light emitting layer 322.

In particular, the buffer layer 328 may be disposed adjacent to the organic light emitting layer 322, in which case the above effect is enhanced.

7 is a schematic cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention.

7, the OLED display 400 includes a first electrode 410, a second electrode 430, an organic light emitting layer 422, a barrier layer 425, a metal layer An electron transport layer 427, and an electron transport layer 423.

For convenience of explanation, the description will be focused on the differences from the above-described embodiment.

The material of the substrate 401 is the same as that of the above-described embodiment, so a detailed description thereof will be omitted.

A first electrode 410 and a second electrode 430 are formed on a substrate 401.

The organic light emitting layer 422 is disposed between at least the first electrode 410 and the second electrode 430. Although not shown, the positions of the first electrode 410 and the second electrode 430 may be reversed. That is, the first electrode 410 may be disposed above the second electrode 430. When the first electrode 410 is disposed above the second electrode 430, the stacking order of the members therebetween is also changed.

The first electrode 410 functions as an anode. The material for forming the first electrode 410 is the same as that of the above-described embodiment, and thus a detailed description thereof will be omitted.

The organic light emitting layer 422 is disposed between the first electrode 410 and the second electrode 430.

The second electrode 430 contains AgMg. That is, the second electrode 430 contains Ag (silver) and Mg (magnesium). In particular, the second electrode 430 contains Ag as a main element and Mg as a sub element. For example, the second electrode 430 is formed to contain Ag more than Mg based on the weight percent (wt%).

The metal layer 427 is disposed between the second electrode 430 and the organic light emitting layer 422. The metal layer 427 is made of a material selected from the group consisting of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) Cesium). ≪ / RTI >

The barrier layer 425 is formed between the second electrode 430 and the organic light emitting layer 422 and the barrier layer 425 is disposed between the metal layer 427 and the organic light emitting layer 422, for example. The barrier layer 425 contains a barrier material, specifically fluoride, oxide or chloride. The specific materials of the barrier material are the same as those of the above-described embodiment, and thus a detailed description thereof will be omitted.

The electron transporting layer 423 is disposed between the organic light emitting layer 422 and the barrier layer 425. Electrons injected from the second electrode 430 through the metal layer 427 through the electron transport layer 423 are more effectively transferred toward the organic light emitting layer 422. [

As an alternative embodiment, a buffer layer 428 may be disposed between the second electrode 430 and the organic light emitting layer 422. Further, the buffer layer 428 is disposed closer to the organic light emitting layer 422 than the barrier layer 425 and the metal layer 427. That is, the buffer layer 428 is disposed between the organic light emitting layer 422 and the barrier layer 425. As a more specific example, the buffer layer 428 may be disposed between the electron transport layer 423 and the organic light emitting layer 422.

The buffer layer 428 may include various materials, specifically, a fluoride, an oxide, a chloride, or an organic material, and the description of the more specific materials is the same as those of the above embodiments.

The buffer layer 428 prevents the conductive particles from diffusing from the second electrode 430 formed of a conductive material into the organic light emitting layer 422. In addition, the buffer layer 428 can enhance the injection characteristics of electrons from the second electrode 430 to the organic light emitting layer 422, thereby improving the light efficiency of the organic light emitting layer 422.

In particular, the buffer layer 428 may be disposed adjacent to the organic light emitting layer 422, in which case the above effect is enhanced.

The buffer layer 428 can be disposed between the electron transport layer 423 and the organic luminescent layer 422 to enhance the smooth transport of electrons from the electron transport layer 423 to the organic luminescent layer 422.

Since the buffer layer 428 is an optional component, a structure in which the buffer layer 428 is omitted in the embodiment of FIG. 7 may be used.

8 is a schematic cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention.

8, the OLED display 500 includes a first electrode 510, a second electrode 530, an organic light emitting layer 522, a barrier layer 525, A hole injecting layer 521, an electron transporting layer 523, and a capping layer 550.

For convenience of explanation, the description will be focused on the differences from the above-described embodiment.

The material of the substrate 501 is the same as that of the above-described embodiment, so a detailed description thereof will be omitted.

A first electrode 510 and a second electrode 530 are formed on a substrate 501.

The organic light emitting layer 522 is disposed between at least the first electrode 510 and the second electrode 530. Although not shown, the positions of the first electrode 510 and the second electrode 530 may be reversed. That is, the first electrode 510 may be disposed above the second electrode 530. When the first electrode 510 is disposed above the second electrode 530, the stacking order of the members therebetween is also changed.

The first electrode 510 functions as an anode. The material for forming the first electrode 510 is the same as that of the above-described embodiment, so a detailed description thereof will be omitted.

The organic light emitting layer 522 is disposed between the first electrode 510 and the second electrode 530.

The second electrode 530 contains AgMg. That is, the second electrode 530 contains Ag (silver) and Mg (magnesium). In particular, the second electrode 530 contains Ag as a main element and Mg as a sub element. For example, the second electrode 530 is formed to contain Ag more than Mg based on the weight percent (wt%).

The metal layer 527 is disposed between the second electrode 530 and the organic light emitting layer 522. The metal layer 527 is made of a material selected from the group consisting of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) Cesium). ≪ / RTI >

The barrier layer 525 is formed between the second electrode 530 and the organic light emitting layer 522 and the barrier layer 525 is disposed between the metal layer 527 and the organic light emitting layer 522, for example. The barrier layer 525 contains a barrier material, specifically a fluoride, an oxide, or a halogen compound. The specific materials of the barrier material are the same as those of the above-described embodiment, and thus a detailed description thereof will be omitted.

The hole injection layer 521 is disposed between the first electrode 510 and the organic light emitting layer 522. Although not shown, a hole transport layer (not shown) may be further included between the hole injection layer 521 and the organic emission layer 522. In addition, the hole injection layer 521 may include a hole transporting material.

The electron transporting layer 523 is disposed between the organic light emitting layer 522 and the barrier layer 525. Electrons injected through the metal layer 527 from the second electrode 530 through the electron transport layer 523 are more effectively transferred toward the organic light emitting layer 522. [

The capping layer 550 is formed on the second electrode 530 to protect the second electrode 530, and is formed using an organic material or an inorganic material.

The organic light emitting display device 500 of the present embodiment is characterized in that between the second electrode 530 and the organic light emitting layer 522, Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium) And a metal layer 527 including at least one selected from the group consisting of Tb (tantalum), Ba (barium), La (lanthanum), and Ce The organic light emitting display device 500 can be easily realized by improving the electron injection characteristics of the organic light emitting display device 522.

Particularly, an electron transporting layer 523 is disposed between the metal layer 527 and the organic luminescent layer 522 in this embodiment, so that electrons are efficiently transferred toward the organic luminescent layer 522.

A hole injection layer 521 is formed on the first electrode 510 so that the flow of holes through the first electrode 510 is smooth in the direction of the organic light emitting layer 522, .

The barrier layer 525 is disposed between the second electrode 530 and the organic light emitting layer 522 and is disposed between the second electrode 530 and the organic light emitting layer 522 via the barrier layer 525. In this embodiment, The movement of the metal material of the two electrodes 530 is prevented so that the shorting between the first electrode 510 and the second electrode 530 and the abnormal emission of the organic light emitting layer 522 are suppressed.

8, at least one of the electron transport layer 523, the hole injection layer 521, and the capping layer 550 of FIG. 8 may be applied to the structures of FIGS. 1 to 7. FIG.

Fig. 9 is a schematic sectional view showing a modification of Fig. 8. Fig. Like reference numerals refer to like elements, and a detailed description thereof will be omitted.

For the sake of convenience of explanation, the description will be focused on the differences from the embodiment of FIG. 8 described above.

Referring to FIG. 9, the OLED display 500 'further includes a buffer layer 528 as compared with the OLED display 500 of FIG.

The buffer layer 528 is disposed between the second electrode 530 and the organic light emitting layer 522. Further, the buffer layer 528 is disposed closer to the organic light-emitting layer 522 than the barrier layer 525 and the metal layer 527. That is, the buffer layer 528 is disposed between the organic light emitting layer 522 and the barrier layer 525. As a more specific example, the buffer layer 528 may be disposed between the electron-transporting layer 523 and the organic light-emitting layer 522.

The buffer layer 528 may include various materials, and the description of the specific materials is the same as in the embodiments described above, and thus will not be described.

The buffer layer 528 shields the conductive particles from diffusing from the second electrode 530 formed of a conductive material into the organic light emitting layer 522. In addition, the buffer layer 528 can improve the injection characteristics of electrons from the second electrode 530 to the organic light emitting layer 522, thereby improving the light efficiency of the organic light emitting layer 522.

In particular, the buffer layer 528 may be disposed adjacent to the organic light emitting layer 522, in which case the above effect is enhanced.

The buffer layer 528 can be disposed between the electron transport layer 523 and the organic emission layer 522 to increase the smooth transport of electrons from the electron transport layer 523 to the organic emission layer 522. [

10 is a schematic cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention.

10, the OLED display 600 includes a first electrode 610, a pixel defining layer 615, a second electrode 630, an organic light emitting layer 622, A barrier layer 625, a metal layer 627, a hole injection layer 621, an electron transport layer 623, and a capping layer 650.

The OLED display 600 includes a plurality of pixels P1, P2, and P3. Here, each of the plurality of pixels P1, P2, and P3 may be a sub-pixel.

For convenience of explanation, the description will be focused on the differences from the above-described embodiment.

The material of the substrate 601 is the same as that of the above-described embodiment, and thus a detailed description thereof will be omitted.

A first electrode 610 and a second electrode 630 are formed on a substrate 601. A pixel defining layer 615 is formed on the first electrode 610 so as to expose a predetermined region of the first electrode 610.

A region in which the first electrode 610 and the second electrode 630 are overlapped with each other without overlapping by the pixel defining layer 615 is a region corresponding to the plurality of pixels P1, to be.

The organic light emitting layer 622 is disposed between at least the first electrode 610 and the second electrode 630. At least the organic light emitting layer 622 is formed in a region where the first electrode 610 and the second electrode 630 cross each other and overlap each other.

The first electrode 610 functions as an anode. The material for forming the first electrode 610 is the same as that of the above-described embodiment, and thus a detailed description thereof will be omitted.

The organic light emitting layer 622 is disposed between the first electrode 610 and the second electrode 630. Specifically, the organic light emitting layer 622 is formed to correspond to the exposed region of the first electrode 610.

The second electrode 630 contains AgMg. That is, the second electrode 630 contains Ag (silver) and Mg (magnesium). In particular, the second electrode 630 contains Ag as a main element and Mg as a sub element. For example, the second electrode 630 is formed to contain Ag more than Mg based on the weight percent (wt%).

The metal layer 627 is disposed between the second electrode 630 and the organic light emitting layer 622. The metal layer 627 may be formed of a material selected from the group consisting of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) Cesium). ≪ / RTI >

The metal layer 627 is formed to extend to correspond to all the pixels P1, P2, and P3, that is, to be common to all the pixels P1, P2, and P3. However, the present embodiment is not limited to this, and the metal layer 627 may be formed separately so as to correspond to each of the pixels P1, P2, and P3.

The barrier layer 625 is formed between the second electrode 630 and the organic light emitting layer 622. The barrier layer 625 is disposed between the metal layer 627 and the organic light emitting layer 622, for example.

The barrier layer 625 may comprise a variety of materials. Specifically, the barrier layer 625 may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

As another optional embodiment, the barrier layer 625 may contain an oxide. For example, the barrier layer 625 may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

As another optional embodiment, the barrier layer 625 may contain a halogen compound. For example, the barrier layer 625 may comprise RbBr, RbI or RbCl.

The barrier layer 625 is formed so as to extend to correspond to all the pixels P1, P2, and P3, that is, to be common to all the pixels P1, P2, and P3. However, the present embodiment is not limited to this, and the barrier layer 625 may be formed separately so as to correspond to each of the pixels P1, P2, and P3.

10, it is needless to say that the present invention can be applied to the organic light emitting display 600 of FIG. 10 as it is or modification of any one of FIGS. That is, for example, the organic light emitting diode display 600 of FIG. 10 may further include a buffer layer (not shown), and may further include an electron transport layer. It may also include a mixed layer instead of the barrier layer and the metal layer. Also, the positions of the barrier layer 625 and the metal layer 627 may be changed.

FIG. 11 is a schematic cross-sectional view showing an organic light emitting display device according to still another embodiment of the present invention, and FIG. 12 is an enlarged view of F in FIG.

The OLED display 700 includes a first electrode 710 formed on a substrate 701, a second electrode 730, an organic emission layer 722, a barrier layer 725, a metal layer 727, a thin film transistor 740 And a capacitor 750.

The organic light emitting diode display 700 of this embodiment may include a plurality of pixels (or subpixels) similarly to that of FIG. 10, but one pixel (or subpixel) is shown for convenience of explanation.

On the substrate 701, a flat surface is provided on the substrate 701, and a base buffer layer 711 containing an insulator is formed to prevent moisture and foreign matter from penetrating toward the substrate 701.

On the base buffer layer 711, a thin film transistor 740 (thin film transistor) and a capacitor 750 are formed.

The thin film transistor 740 mainly includes an active layer 741, a gate electrode 742, a source electrode 743, and a drain electrode 744.

The capacitor 750 includes a first capacitor electrode 751 and a second capacitor electrode 752.

Specifically, an active layer 741 formed in a predetermined pattern is disposed on the upper surface of the base buffer layer 711. The active layer 741 may contain an inorganic semiconductor material such as silicon, an organic semiconductor material, or an oxide semiconductor material. The first capacitor electrode 751 is formed on the same layer as the active layer 741 and may be formed of the same material as the active layer 741.

A gate insulating film 712 is formed on the active layer 741. A gate electrode 742 is formed on the gate insulating film 712 so as to correspond to the active layer 741. An interlayer insulating film 713 is formed so as to cover the gate electrode 742 and a source electrode 743 and a drain electrode 744 are formed on the interlayer insulating film 713. The source electrode 743 and the drain electrode 744 are in contact with a predetermined region of the active layer 741 .

A second capacitor electrode 752 is formed on the same layer as the source electrode 743 and the drain electrode 744 and may be formed of the same material as the source electrode 743 or the drain electrode 744. [

A passivation layer 714 may be formed to cover the source electrode 743 and the drain electrode 744 and a separate insulating layer may be formed on the passivation layer 714 for planarization of the thin film transistor 740.

A first electrode 710 is formed on the passivation layer 714. The first electrode 710 is formed to be electrically connected to one of the source electrode 743 and the drain electrode 744. A pixel defining layer 715 is formed to cover the first electrode 710. After the predetermined opening 74 is formed in the pixel defining layer 715, the organic light emitting layer 722 is formed in the region defined by the opening 74. A second electrode 730 is formed on the organic light emitting layer 722.

The second electrode 730 contains AgMg. That is, the second electrode 730 contains Ag (silver) and Mg (magnesium). In particular, the second electrode 730 contains Ag as a main element and Mg as a sub element. For example, the second electrode 730 is formed to contain Ag more than Mg based on the weight percent (wt%).

The metal layer 727 is disposed between the second electrode 730 and the organic light emitting layer 722. The metal layer 727 is made of a material selected from the group consisting of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) Cesium). ≪ / RTI >

The barrier layer 725 is formed between the second electrode 730 and the organic light emitting layer 722 and the barrier layer 725 is disposed between the metal layer 727 and the organic light emitting layer 722, for example.

The barrier layer 725 may comprise a variety of materials. Specifically, the barrier layer 725 may include at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3.

As another optional embodiment, the barrier layer 725 may contain an oxide. For example, the barrier layer 725 may include at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO.

As another optional embodiment, the barrier layer 725 may contain a halogen compound. For example, the barrier layer 725 may include RbBr, RbI, or RbCl.

11 and 12 include a structure similar to that of Fig. 1, but the present embodiment is not limited thereto. In other words, it is needless to say that the structure of any one of FIGS. 1 to 9 can be applied to the organic light emitting diode display 700 of FIGS. 11 and 12 as it is. That is, for example, the OLED display 700 of FIG. 11 may further include a buffer layer (not shown), and may further include an electron transport layer. It may also include a mixed layer instead of the barrier layer and the metal layer. Also, the positions of the barrier layer 725 and the metal layer 727 may be changed.

In addition, the organic light emitting display 700 of FIG. 11 may have the structure of FIG. 1, that is, the metal layer 727 or the barrier layer 725 may be formed in common for all the pixels and may be formed for each pixel.

13 is a schematic sectional view showing a modification of Fig. Like reference numerals refer to like elements, and a detailed description thereof will be omitted.

For convenience of description, the description will be focused on the differences from the embodiments of Figs. 11 and 12 described above.

Referring to FIG. 13, the OLED display 700 'further includes a buffer layer 728 as compared with the OLED display 700 of FIGS. 11 and 12.

The buffer layer 728 is disposed between the second electrode 730 and the organic light emitting layer 722. Further, the buffer layer 728 is disposed closer to the organic light-emitting layer 722 than the barrier layer 725 and the metal layer 727. That is, the buffer layer 728 is disposed between the organic light emitting layer 722 and the barrier layer 725.

The buffer layer 728 may include various materials, and the description of the specific materials is the same as that of the above embodiments, and thus will not be described.

The buffer layer 728 shields the conductive particles from diffusing from the second electrode 730 formed of a conductive material into the organic light emitting layer 722. In addition, the buffer layer 728 can improve the injection characteristics of electrons from the second electrode 730 to the organic light emitting layer 722, thereby improving the light efficiency of the organic light emitting layer 722.

In particular, the buffer layer 728 may be disposed adjacent to the organic light emitting layer 722, in which case the above effect is enhanced.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art . Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

100, 200, 300, 400, 500, 600, 700: organic light emitting display
110, 210, 310, 410, 510, 610, 710:
122, 222, 322, 422, 522, 622, 722:
130, 230, 330, 430, 530, 630, 730:
125, 225, 325, 425, 525, 625, 725: barrier layer
127, 227, 327, 427, 527, 627, 727: metal layer

Claims (82)

A first electrode;
A second electrode disposed on the first electrode and containing Ag and Mg;
An organic light emitting layer disposed between the first electrode and the second electrode;
A metal layer disposed between the organic light emitting layer and the second electrode; And
And a barrier layer disposed between the organic light emitting layer and the second electrode. The method according to claim 1,
The metal layer may include at least one of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium), La (lanthanum) And at least one selected from the group consisting of silicon oxide and silicon nitride. The method according to claim 1,
Wherein the barrier layer contains a fluoride. The method according to claim 1,
Wherein the fluoride comprises at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3. The method according to claim 1,
Wherein the barrier layer contains an oxide. 6. The method of claim 5,
Wherein the oxide includes at least one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO. The method according to claim 1,
Wherein the barrier layer contains a halogen compound. The method according to claim 1,
Wherein the second electrode contains Ag more than Mg in weight percent. The method according to claim 1,
Wherein the metal layer is disposed closer to the second electrode than the barrier layer. The method according to claim 1,
And the metal layer is disposed in contact with the second electrode. The method according to claim 1,
Wherein the barrier layer is disposed closer to the second electrode than the metal layer. The method according to claim 1,
And a buffer layer disposed between the second electrode and the organic light emitting layer. 13. The method of claim 12,
Wherein the buffer layer is disposed closer to the organic light emitting layer than the metal layer and the barrier layer. 13. The method of claim 12,
Wherein the buffer layer contains a fluoride. 15. The method of claim 14,
Wherein the fluoride comprises at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3. 15. The method of claim 14,
Wherein the buffer layer contains an oxide. 17. The method of claim 16,
Wherein the oxide includes any one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO. 13. The method of claim 12,
Wherein the buffer layer contains a chloride. 20. The method of claim 19,
Wherein the chloride comprises RbCl. 13. The method of claim 12,
Wherein the buffer layer contains an organic material. The method according to claim 1,
And an electron transport layer disposed between the second electrode and the organic light emitting layer,
Wherein the metal layer and the barrier layer are disposed between the electron transport layer and the second electrode. 22. The method of claim 21,
And a buffer layer disposed between the organic light emitting layer and the electron transporting layer. 23. The method of claim 22,
Wherein the buffer layer comprises at least one selected from the group consisting of fluoride, oxide, chloride, and organic material. A first electrode;
A second electrode disposed on the first electrode and containing Ag and Mg;
An organic light emitting layer disposed between the first electrode and the second electrode;
And a mixed layer disposed between the organic light emitting layer and the second electrode and containing a metal material and a barrier material. 25. The method of claim 24,
The metal material may be selected from the group consisting of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) ). ≪ / RTI > 25. The method of claim 24,
Wherein the barrier material contains a fluoride. 27. The method of claim 26,
Wherein the fluoride comprises at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3. 25. The method of claim 24,
Wherein the barrier material contains an oxide. 29. The method of claim 28,
Wherein the oxide includes any one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO. 25. The method of claim 24,
Wherein the barrier material contains a halogen compound. 25. The method of claim 24,
Wherein the mixed layer is formed such that the barrier material is greater than the metal material on a weight basis. 25. The method of claim 24,
And a buffer layer disposed between the second electrode and the organic light emitting layer. 33. The method of claim 32,
Wherein the buffer layer is disposed closer to the organic light emitting layer than the mixed layer. 33. The method of claim 32,
Wherein the buffer layer contains a fluoride. 35. The method of claim 34,
Wherein the fluoride comprises at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3. 33. The method of claim 32,
Wherein the buffer layer contains an oxide. 37. The method of claim 36,
Wherein the oxide includes any one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO. 33. The method of claim 32,
Wherein the buffer layer contains a chloride. 39. The method of claim 38,
Wherein the chloride comprises RbCl. 33. The method of claim 32,
Wherein the buffer layer contains an organic material. 25. The method of claim 24,
And an electron transport layer disposed between the second electrode and the organic light emitting layer,
And the mixed layer is disposed between the electron transport layer and the second electrode. 42. The method of claim 41,
And a buffer layer disposed between the organic light emitting layer and the electron transporting layer. 43. The method of claim 42,
Wherein the buffer layer comprises at least one selected from the group consisting of fluoride, oxide, chloride, and organic material. An organic light emitting diode display comprising a plurality of pixels,
Each pixel of the plurality of pixels includes:
A first electrode;
A second electrode disposed on the first electrode and containing Ag and Mg;
An organic light emitting layer disposed between the first electrode and the second electrode;
A metal layer disposed between the organic light emitting layer and the second electrode; And
And a barrier layer disposed between the organic light emitting layer and the second electrode. 45. The method of claim 44,
Wherein the barrier layer or the metal layer is formed in common with two or more pixels. 45. The method of claim 44,
Wherein the barrier layer or the metal layer is formed separately for each pixel. 45. The method of claim 44,
Wherein each of the pixels includes a thin film transistor electrically connected to the first electrode. 45. The method of claim 44,
The metal layer may include at least one of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium), La (lanthanum) And at least one selected from the group consisting of silicon oxide and silicon nitride. 45. The method of claim 44,
Wherein the barrier layer contains a fluoride. 50. The method of claim 49,
Wherein the fluoride comprises at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3. 45. The method of claim 44,
Wherein the barrier layer contains an oxide. 52. The method of claim 51,
Wherein the oxide includes any one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO. 45. The method of claim 44,
Wherein the barrier layer contains a halogen compound. 45. The method of claim 44,
Wherein the second electrode contains Ag more than Mg in weight percent. 45. The method of claim 44,
Wherein the metal layer is disposed closer to the second electrode than the barrier layer and is in contact with the second electrode. 45. The method of claim 44,
Wherein the barrier layer is disposed closer to the second electrode than the metal layer. 45. The method of claim 44,
And a buffer layer disposed between the second electrode and the organic light emitting layer. 58. The method of claim 57,
Wherein the buffer layer is disposed closer to the organic light emitting layer than the metal layer and the barrier layer. 58. The method of claim 57,
Wherein the buffer layer contains a fluoride. 60. The method of claim 59,
Wherein the fluoride comprises at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3. 58. The method of claim 57,
Wherein the buffer layer contains an oxide. 62. The method of claim 61,
Wherein the oxide includes any one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO. 58. The method of claim 57,
Wherein the buffer layer contains a chloride. 64. The method of claim 63,
Wherein the chloride comprises RbCl. 58. The method of claim 57,
Wherein the buffer layer contains an organic material. An organic light emitting diode display comprising a plurality of pixels,
Each pixel of the plurality of pixels includes:
A first electrode;
A second electrode disposed on the first electrode and containing Ag and Mg;
An organic light emitting layer disposed between the first electrode and the second electrode;
And a mixed layer disposed between the organic light emitting layer and the second electrode and containing a metal material and a barrier material. 67. The method of claim 66,
The metal material may be selected from the group consisting of Yb (ytterbium), Sm (samarium), Ca (calcium), Sr (strontium), Eu (europium), Tb (terbium), Ba (barium) ). ≪ / RTI > 67. The method of claim 66,
Wherein the barrier material contains a fluoride. 69. The method of claim 68,
Wherein the fluoride comprises at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3. 67. The method of claim 66,
Wherein the barrier material contains an oxide. 71. The method of claim 70,
Wherein the oxide includes any one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO. 67. The method of claim 66,
Wherein the barrier material contains a halogen compound. 67. The method of claim 66,
Wherein the mixed layer is formed such that the barrier material is greater than the metal material on a weight basis. 67. The method of claim 66,
And a buffer layer disposed between the second electrode and the organic light emitting layer. 75. The method of claim 74,
Wherein the buffer layer is disposed closer to the organic light emitting layer than the mixed layer. 75. The method of claim 74,
Wherein the buffer layer contains a fluoride. 80. The method of claim 76,
Wherein the fluoride comprises at least one selected from the group consisting of LiF, CaF2, NaF2, and AlF3. 75. The method of claim 74,
Wherein the buffer layer contains an oxide. 79. The method of claim 78,
Wherein the oxide includes any one selected from the group consisting of CaO, LiO, MgO, ZnO, and ITO. 75. The method of claim 74,
Wherein the buffer layer contains a chloride. 79. The method of claim 80,
Wherein the chloride comprises RbCl. 75. The method of claim 74,
Wherein the buffer layer contains an organic material.

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