KR20150027973A - Method for manufacturing of organic light emitting diode device - Google Patents

Abstract

A method for manufacturing an organic light emitting diode device according to an embodiment of the present invention includes the steps of: forming a first electrode on a substrate including a first pixel area, a second pixel area and a third pixel area respectively; forming a bank layer partitioning the first pixel area, the second pixel area and the third pixel area on the substrate; forming a light emission layer on the first pixel area, the second pixel area and the third pixel area respectively; and forming a second electrode on the substrate where the light emission layers are formed. The method of the present can improve aperture ratio and process reliability.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing an organic electroluminescent device,

The present invention relates to an organic electroluminescent device, and more particularly, to a method of manufacturing an organic electroluminescent device capable of easily fabricating a micro-cavity structure.

2. Description of the Related Art In recent years, the importance of flat panel displays (FPDs) has been increasing with the development of multimedia. In response to this, various kinds of devices such as a liquid crystal display (LCD), a plasma display panel (PDP), a field emission display (FED), an organic light emitting diode A planar display of a branch has been put into practical use.

Particularly, the organic electroluminescent device has a response speed of 1 ms or less, a high response speed, low power consumption, and self-emission. In addition, there is no problem in the viewing angle, which is advantageous as a moving picture display medium regardless of the size of the apparatus. In addition, since it can be manufactured at a low temperature and the manufacturing process is simple based on the existing semiconductor process technology, it is attracting attention as a next generation flat panel display device.

Conventional organic electroluminescent devices are undergoing various studies for improving the light extraction efficiency, and a representative technique is a method using a micro-cavity structure. The resonance structure is a principle in which light emitted from the light emitting layer partially passes through the translucent electrode, part of the light is reflected, and is reflected and amplified again at the reflective electrode.

1 is a view showing a resonance structure of a conventional organic electroluminescent device. Referring to FIG. 1, a conventional organic electroluminescent device has a reflective electrode 20 formed on a substrate 10 at R pixels RP, G pixels GP, and B pixels BP, respectively. Since the light extraction efficiency differs for each of the R, G, and B pixels, the resonance distance, which is the distance between the reflective electrode 20 and the transflective electrode 70, is formed for each pixel. To this end, layers such as transparent ITO are laminated between the reflective electrode 20 and the light emitting layers R, G and B. Therefore, the first ITO 30, the second ITO 40 and the third ITO 50 are formed on the R pixel RP and the second ITO 40 and the third ITO 50 , And a third ITO 50 is formed on the B pixel (BP).

However, in the process of patterning the transparent ITOs described above, if the alignment of the mask is not accurate, the pixel region shifts, resulting in a decrease in the aperture ratio or a change in the color coordinate due to the difference in the resonance distance .

The present invention provides a method of manufacturing an organic electroluminescent device capable of improving an aperture ratio and improving process reliability.

According to an aspect of the present invention, there is provided a method of fabricating an organic electroluminescent device, including: forming a first metal oxide layer on a substrate defining a first pixel region, a second pixel region, A reflective layer and a second metal oxide layer are sequentially formed and heat-treated to polycrystallize the first and second metal oxide layers, patterning the first metal oxide layer, the reflective layer, and the second metal oxide layer, Forming a first metal oxide layer pattern, a reflective layer pattern, and a second metal oxide layer pattern on each of the first pixel region, the second pixel region, and the third pixel region, Forming a first inorganic pattern on the pattern, forming and etching a third metal oxide layer over the entire surface of the substrate to form a first sub-layer on the second metal oxide layer pattern in the third pixel region, 1 pixel zero Forming a second inorganic pattern on the second metal oxide pattern formed on the first pixel region, forming and etching a fourth metal oxide layer on the entire surface of the substrate, Forming a third sub-layer on the first sub-layer of the third pixel region to form a first electrode in the first pixel region, the second pixel region and the third pixel region, respectively, Forming a bank layer for partitioning the first pixel region, the second pixel region, and the third pixel region in the first pixel region, the second pixel region, and the third pixel region; And forming a second electrode on the substrate having the light emitting layers formed thereon.

The forming of the first sub-layer on the second metal oxide layer pattern in the third pixel region may include forming first inorganic patterns on the second metal oxide layer pattern formed in the first and second pixel regions, respectively And a third metal oxide layer is formed on the entire surface of the substrate, the third metal oxide layer is laminated on the polycrystallized second metal oxide layer pattern in the third pixel region, and the polycrystallized second metal oxide layer pattern And the second metal oxide layer is formed in an amorphous state when the third metal oxide layer is stacked on the first inorganic patterns of the first and second pixel regions.

The third metal oxide layer is formed in the amorphous state in the first and second pixel regions, and after polycrystallization in the third pixel region, the amorphous metal oxide is etched to etch the amorphous metal oxide on the third pixel region And removing the remaining third amorphous metal oxide layer except for the polycrystallized third metal oxide layer.

And removing the first inorganic patterns after removing the third metal oxide layer in the amorphous state.

Wherein forming the second sub-layer on the second metal oxide layer pattern of the second pixel region and forming the third sub-layer on the first sub-layer of the third pixel region comprises: forming When a second inorganic pattern is formed on the second metal oxide layer pattern and a fourth metal oxide layer is formed on the entire surface of the substrate, the second metal oxide layer pattern is formed on the polycrystallized second metal oxide layer patterns of the second and third pixel regions The third metal oxide layer is deposited and crystallized along with the crystallinity of the polycrystallized second metal oxide layer patterns to be polycrystallized, and the fourth metal oxide layer is laminated on the second inorganic pattern of the first pixel region, Is formed in an amorphous state.

Wherein the fourth metal oxide layer is formed in an amorphous state in the first pixel region and is polycrystallized in the second and third pixel regions, the second and third pixel regions are etched using an etchant for etching the amorphous metal oxide, And removing the remaining fourth amorphous metal oxide layer except the polycrystallized fourth metal oxide layer on the three pixel region.

And removing the second inorganic pattern after removing the fourth metal oxide layer in the amorphous state.

The method of manufacturing an organic electroluminescent device according to the present invention can reduce the aperture ratio of each pixel region and improve the reliability of pattern formation by using the solid phase crystallization of ITO to form sub- There is an advantage to be able to.

1 is a view showing a resonant structure of a conventional organic electroluminescent device.
2 is a cross-sectional view illustrating an organic electroluminescent device according to an embodiment of the present invention.
FIGS. 3A to 3K are cross-sectional views illustrating a method of manufacturing an organic electroluminescent device according to an embodiment of the present invention.
4 is a SEM measurement of a substrate manufactured according to an embodiment of the present invention.

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals throughout the specification denote substantially identical components. In the following description, well-known functions or constructions are not described in detail to avoid unnecessarily obscuring the subject matter of the present invention.

2 is a cross-sectional view illustrating an organic electroluminescent device according to an embodiment of the present invention.

2, an organic electroluminescent device 100 according to an embodiment of the present invention includes an R pixel region 120R, a G pixel region 120G, and a B pixel region 120B on a substrate 110 do. The first electrodes 130R, 130G, and 130B, the light emitting layers 160R, 160G, and 160B, and the second electrode 170 are formed on the R, G, and B pixel regions 120R, 120G and 120B.

More specifically, the first electrodes 130R, 130G, and 130B are located in the R pixel region 120R, the G pixel region 120G, and the B pixel region 120B on the substrate 110, respectively. The first electrode 130R of the R pixel region 120R includes the first metal oxide layer pattern 131R, the reflective layer pattern 132R, the second metal oxide layer pattern 133R, the first sublayer 134, The first electrode 130G of the G pixel region 120G includes the first metal oxide layer pattern 131G, the reflective layer pattern 132G, the second metal oxide layer pattern 133G, and the sub- The first electrode 130B of the B pixel region 120B includes the first metal oxide layer pattern 131B, the reflection layer pattern 132B and the second metal oxide layer pattern 133B .

A bank layer 150 for partitioning the R pixel region 120R, the G pixel region 120G and the B pixel region 120B of the substrate 110 is located. The first light emitting layer 160R is positioned on the first electrode 130R of the R pixel region 120R partitioned by the bank layer 150 and the second light emitting layer 160R is disposed on the first electrode 130G of the G pixel region 120G. The light emitting layer 160G is located and the third light emitting layer 160B is located on the first electrode 130B of the B pixel region 120B. The second electrode 170 covering the R pixel region 120R, the G pixel region 120G, and the B pixel region 120B of the substrate 110 is positioned.

Accordingly, the organic EL device 100 according to the embodiment of the present invention is characterized in that the first sub layer 134 and the second sub layer 135 are located in the R pixel region 120R and the first sub layer 134 and the second sub layer 135 are located in the G pixel region 120R. The third sub layer 136 is located and the sub layer is not located in the B pixel region 120R so that the resonance distance varies depending on the R, G, and B pixel regions 120R, 120G, and 120B. That is, the resonance distance of the R pixel region 120R is the longest and the resonance distance of the B pixel region 120B is the shortest, thereby maximizing the light efficiency of the organic electroluminescent device 100.

2 in which a first electrode, a light emitting layer, and a second electrode are disposed on a substrate, the organic electroluminescent device according to an embodiment of the present invention is described as an example in which a thin film transistor May be located.

Hereinafter, a method of manufacturing the organic electroluminescent device of the present invention will be described. 3A to 3K are cross-sectional views illustrating a method of manufacturing an organic electroluminescent device according to an embodiment of the present invention.

Referring to FIG. 3A, a first metal oxide layer 215, a reflective layer 220, and a second metal oxide layer 225 are sequentially formed on a substrate 210. The substrate 210 is formed of transparent glass, plastic, or a conductive material. The first metal oxide layer 215 and the second metal oxide layer 225 are formed of a transparent metal oxide such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). The reflective layer 220 is formed of silver (Ag), aluminum (Al), nickel (Ni) or an alloy thereof having high reflectance. The first metal oxide layer 215, the reflective layer 220, and the second metal oxide layer 225 are formed by a known method of depositing a metal such as sputtering. Here, the first metal oxide layer 215 serves to improve adhesion to the insulating layer when the substrate 210 or the thin film transistor is formed, and the reflective layer 220 reflects light emitted from the light emitting layer.

Referring to FIG. 3B, a first PR (photoresist) is coated on a substrate 210 on which a first metal oxide layer 215, a reflective layer 220, and a second metal oxide layer 225 are formed, Thereby forming a plurality of first PR patterns PR1. The first metal oxide layer pattern 241R, the reflective layer pattern 242R and the second metal oxide layer pattern 243R are formed in the R pixel region 230R using the plurality of first PR patterns PR1 as a mask, The first metal oxide layer pattern 241G, the reflection layer pattern 242G and the second metal oxide layer pattern 243G are formed in the pixel region 230G and the first metal oxide layer pattern 241B ), A reflective layer pattern 242B, and a second metal oxide layer pattern 243B.

Next, referring to FIG. 3C, a plurality of remaining first PR patterns PR1 are removed, and then a crystallization process is performed. The crystallization process polycrystallizes the first metal oxide layer patterns 241R, 241G, and 241B and the second metal oxide layer patterns 243R, 243G, and 243B formed in the respective pixel regions. In the crystallization process, the substrate is heat-treated at a temperature of about 200 to 300 DEG C for several tens of minutes to crystallize the first and second metal oxide layer patterns in an amorphous state to form a polycrystalline state. Next, a first inorganic film 250 is formed on the entire surface of the substrate 210. The first inorganic film 250 is formed of silicon nitride (SiNx) or silicon oxide (SiOx).

Next, referring to FIG. 3D, a second PR is coated on the substrate 210 on which the first inorganic film 250 is formed, and exposed and developed to form a plurality of second PR patterns PR2. At this time, the second PR patterns PR2 are formed in the B pixel region 230B and the G pixel region 230G. The first inorganic film 250 is patterned using the plurality of second PR patterns PR2 as a mask to form first inorganic patterns 251B and 251G on the B pixel region 230B and the G pixel region 230G do. And then removes the remaining plurality of second PR patterns PR2.

Next, referring to FIG. 3E, a third metal oxide layer 260 is formed on the entire surface of the substrate 210. The third metal oxide layer 260 is formed of a transparent metal oxide such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), which is the same material as the first and second metal oxide layers. At this time, when a metal oxide, which is a material of the third metal oxide layer 260, is deposited on the entire surface of the substrate 210, a metal oxide is deposited on the surface of the second metal oxide layer pattern 243R in the R pixel region 230R And is grown in accordance with the crystallinity of the crystallized second metal oxide layer pattern 243R to form the third metal oxide layer 262 in the polycrystalline state. On the other hand, a metal oxide is deposited on the surfaces of the first inorganic patterns 251B and 251G and the surface of the substrate 210 in the B pixel region 230B, the G pixel region 230G, and the remaining regions except for the R pixel region 230R The third metal oxide layer 261 in an amorphous state is formed.

3F, the amorphous third metal oxide layer 261 formed on the substrate 210 is removed using an etchant capable of etching the amorphous metal oxide, and the polycrystalline state of the R pixel region 230R The first sub-layer 270, which is a third metal oxide layer, is formed. At this time, as an etching solution capable of etching the amorphous metal oxide, for example, oxalic acid which etches amorphous ITO may be used.

Next, referring to FIG. 3G, the first inorganic patterns 251R and 251G remaining on the substrate 210 are removed. Then, a second inorganic film is formed on the substrate 210 with the same material as that of the first inorganic film, a third PR is coated on the substrate 210 on which the second inorganic film is formed, exposed and developed to form a third PR pattern PR3 ). At this time, the third PR pattern PR3 is formed in the B pixel region 230B. The second inorganic film 275 is formed on the B pixel region 230B by patterning the second inorganic film using the third PR pattern PR3 as a mask. The remaining third PR pattern PR3 is removed.

Next, referring to FIG. 3H, a fourth metal oxide layer 280 is formed on the entire surface of the substrate 210. The fourth metal oxide layer 280 is formed of a transparent metal oxide such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), which is the same material as the first to third metal oxide layers. At this time, when a metal oxide, which is a material of the fourth metal oxide layer 280, is deposited on the entire surface of the substrate 210, a metal oxide is deposited on the surface of the second metal oxide layer pattern 243G in the G pixel region 230G And grows along the crystallinity of the crystallized second metal oxide layer pattern 243G to form the fourth metal oxide layer 282 in the polycrystalline state. Also, in the R pixel region 230R, a metal oxide is deposited on the surface of the first sub-layer 270 to grow along the crystallinity of the polycrystallized first sub-layer 270 to form a fourth metal oxide layer 282). On the other hand, since the metal oxide is deposited on the surface of the second inorganic pattern 275 and the surface of the substrate 210 in the B pixel region 230B excluding the G pixel region 230G and the R pixel region 230R and in the remaining region, A fourth metal oxide layer 281 is formed.

3I, an amorphous fourth metal oxide layer 281 formed on the substrate 210 is removed using an etchant capable of etching the amorphous metal oxide, and the polycrystalline state of the R pixel region 230R And a third sub-layer 295, which is a fourth metal oxide layer in the polycrystalline state of the G pixel region 230G, is formed on the second sub-layer 290 as a fourth metal oxide layer. At this time, as an etching solution capable of etching the amorphous metal oxide, for example, oxalic acid which etches amorphous ITO may be used.

Referring to FIG. 3J, the second inorganic pattern 275 remaining on the substrate 210 is removed, and the R sub-pixel 230R, the G sub-pixel 230G, and the B sub-pixel 230B 1 electrodes 300R, 300G, and 300B are formed. Therefore, the first electrode 300R of the R pixel region 230R has the first metal oxide layer pattern 241R, the reflective layer pattern 242R, the second metal oxide layer pattern 243R, the first sub-layer 270, The first electrode 300G of the G pixel region 230G includes the first metal oxide layer pattern 241G, the reflective layer pattern 242G, the second metal oxide layer pattern 243G, The first electrode 300B of the B pixel region 230B includes a first metal oxide layer pattern 241B, a reflective layer pattern 242B, a second metal oxide layer pattern 243B ).

Referring to FIG. 3K, a bank layer 310 for isolating and partitioning the first electrodes 300R, 300G, and 300B of the R, G, and B pixel regions 230R, 230G, and 230B is formed. The bank layer 310 may be formed of an organic material such as polyimide, benzocyclobutene series resin, or acrylate. A part of the bank layer 310 is patterned to form an opening 315 for exposing the first electrodes 300R, 300G, and 300B.

Next, the R light emitting layer 320R is formed in the R pixel region 230R exposed by the bank layer 310, the G light emitting layer 320G is formed in the G pixel region 230G, and the G light emitting layer 320G is formed in the B pixel region 230B Thereby forming a B light emitting layer 320B.

The R emission layer 320R includes a host material containing carbazole biphenyl (CBP) or mCP (1,3-bis (carbazol-9-yl) A phosphorescent material comprising a dopant comprising at least one selected from the group consisting of PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) And may alternatively be made of fluorescent materials including but not limited to PBD: Eu (DBM) ₃ (Phen) or Perylene.

The G-emission layer 320G may comprise a host material comprising CBP or mCP and may comprise a phosphorescent material comprising a dopant material comprising Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium) , And Alq3 (tris (8-hydroxyquinolino) aluminum). However, the present invention is not limited thereto.

The B luminescent layer 320B comprises a host material comprising CBP or mCP and may be composed of a phosphorescent material comprising a dopant material comprising (4,6-F ₂ ppy) ₂ Irpic, while the spiro-DPVBi , a spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), a PFO-based polymer, and a PPV-based polymer.

Although not shown in the present invention, functional layers for improving the luminous efficiency may be formed in each of the emission layers 320R, 320G, and 320B. The functional layers may include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. The hole injection layer may function to smoothly inject holes from the first electrode into the light emitting layer and may be formed of at least one of CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline) N-dinaphthyl-N, N'-diphenyl benzidine), but the present invention is not limited thereto. The hole transport layer plays a role of facilitating the transport of holes, and the hole transport layer functions as a hole transporting layer for transporting holes, such as NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'- -bis- (phenyl) -benzidine), s-TAD and 4,4 ', 4 "-tris (N-3-methylphenyl-N- phenylamino) -triphenylamine The electron transport layer plays a role of facilitating the transport of electrons and may be any one selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq and SAlq The electron injection layer plays a role of facilitating the injection of electrons, and may use at least one selected from the group consisting of LiF, Li, Ba, and BaF ₂ , but is not limited thereto .

Next, a second electrode 330 is formed on the substrate 210 on which the light emitting layers 320R, 320G, and 320B are formed. The second electrode 330 may be formed of a semitransparent electrode of low work function such as silver (Ag), magnesium (Mg), calcium (Ca), aluminum (Al), or an alloy thereof. Accordingly, the R subpixel 230R, the G subpixel 230G, and the second subpixel 230G on which the first electrodes 300R, 300G, and 300B, the light emitting layers 320R, 320G, and 320B, And the B sub-pixel 230B are formed on the organic light emitting display.

The organic electroluminescent device 200 according to an embodiment of the present invention as described above forms the first sub layer 270 and the second sub layer 290 in the R subpixel 230R and the G subpixel The third sub-layer 295 is formed in the B sub-pixel 230G and the sub-layers are not formed in the B sub-pixel 230B so that the resonance distance varies depending on the R, G, and B pixel regions 230R, 230G, and 230B . That is, the resonance distance of the R pixel region 230R is the longest and the resonance distance of the B pixel region 230B is the shortest, thereby maximizing the light efficiency of the organic electroluminescent device 200.

In the method of manufacturing an organic electroluminescent device of the present invention, an amorphous metal oxide layer is formed on the metal oxide layers to crystallize the metal oxide layers, and then an amorphous metal oxide layer is etched to etch the amorphous metal oxide layer. . Therefore, the size of the sub-layers formed on the polycrystalline metal oxide layer pattern can be made to coincide with the lower layers. Therefore, there is an advantage that the aperture ratio of each pixel region can be prevented from being reduced and the reliability of pattern formation can be improved.

Hereinafter, a method for producing the organic electroluminescent device of the present invention will be described in detail in the following examples. However, the embodiments described below are only examples of the present invention, and the present invention is not limited to the following embodiments.

Example

On the glass substrate, ITO of 400 angstroms, Ag alloy of 1000 angstroms, and ITO of 100 angstroms were sequentially formed by sputtering, and patterned by R, G, and B regions. Then, the ITOs were crystallized by heat treatment in an oven at a temperature of 230 DEG C for 30 minutes. Next, the R and G regions were covered with SiNx, the B region was exposed, and a test ITO film of 750 ANGSTROM was deposited on the entire surface of the substrate. Then, ITO was etched with oxalic acid.

The thus prepared substrate was observed with an SEM and is shown in Fig. Referring to FIG. 4, it was confirmed that the test ITO was etched and removed in the R and G regions, but the test ITO in the B region was not etched by the etchant in the crystallized state. That is, it was confirmed that when the lower ITO was in a crystallized state and ITO was deposited thereon, the ITO crystallized along the crystallinity of the lower ITO.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the present invention should not be limited to the details described in the detailed description, but should be defined by the claims.

110: substrate 120R: R pixel region
120G: G pixel region 120B: B pixel region
130R, G, B: first electrode 134: first sub-layer
135: second sublayer 136: third sublayer
150: bank layer 160R: R emission layer
160G: G light emitting layer 160B: B light emitting layer
170: second electrode

Claims (7)

A first metal oxide layer, a reflection layer, and a second metal oxide layer are sequentially formed on a substrate on which a first pixel region, a second pixel region, and a third pixel region are defined, and heat-treated to form the first and second metal oxide layers Polycrystallization;
The first metal oxide layer, the reflective layer, and the second metal oxide layer are patterned to form a first metal oxide layer pattern, a reflective layer pattern, and a second metal oxide layer pattern in each of the first pixel region, the second pixel region, and the third pixel region ;
Forming a first inorganic pattern on the second metal oxide layer pattern formed on the first and second pixel regions, forming and etching a third metal oxide layer on the entire surface of the substrate, Forming a first sub-layer on the metal oxide layer pattern;
Forming a second inorganic pattern on the second metal oxide pattern formed on the first pixel region, forming a fourth metal oxide layer on the entire surface of the substrate and etching the second metal oxide pattern on the second metal oxide layer pattern And forming a third sub-layer on the first sub-layer of the third pixel region to form a first electrode in the first pixel region, the second pixel region, and the third pixel region, respectively step;
Forming a bank layer for partitioning the first pixel region, the second pixel region, and the third pixel region on the substrate;
Forming a light emitting layer in each of the first pixel region, the second pixel region, and the third pixel region; And
And forming a second electrode on the substrate having the light emitting layers formed thereon.
The method according to claim 1,
Wherein forming the first sub-layer on the second metal oxide layer pattern in the third pixel region comprises:
When the first inorganic patterns are formed on the second metal oxide layer pattern formed in the first and second pixel regions and the third metal oxide layer is formed on the entire surface of the substrate,
The third metal oxide layer is deposited on the polycrystallized second metal oxide layer pattern in the third pixel region, and the polycrystallized second metal oxide layer pattern is grown and polycrystallized along the crystallinity of the polycrystallized second metal oxide layer pattern,
Wherein when the third metal oxide layer is stacked on the first inorganic patterns of the first and second pixel regions, the third metal oxide layer is formed in an amorphous state.
3. The method of claim 2,
After the third metal oxide layer is formed in the amorphous state in the first and second pixel regions and polycrystallized in the third pixel region,
Wherein the third metal oxide layer is removed except the polycrystallized third metal oxide layer on the third pixel region by using an etchant for etching the amorphous metal oxide. ≪ / RTI >
The method of claim 3,
And removing the first inorganic patterns after removing the third metal oxide layer in the amorphous state.
The method according to claim 1,
Forming a second sub-layer on the second metal oxide layer pattern of the second pixel region and forming a third sub-layer on the first sub-layer of the third pixel region,
If a second inorganic pattern is formed on the second metal oxide layer pattern formed on the first pixel region and a fourth metal oxide layer is formed on the entire surface of the substrate,
The third metal oxide layer is deposited on the polycrystallized second metal oxide layer patterns of the second and third pixel regions and is grown and crystallized according to the crystallinity of the polycrystallized second metal oxide layer patterns ,
Wherein when the fourth metal oxide layer is stacked on the second inorganic pattern of the first pixel region, the fourth metal oxide layer is formed in an amorphous state.
6. The method of claim 5,
After the fourth metal oxide layer is formed in the amorphous state in the first pixel region and polycrystallized in the second and third pixel regions,
And removing the remaining fourth amorphous metal oxide layer except the polycrystallized fourth metal oxide layer on the second and third pixel regions using an etching solution for etching the amorphous metal oxide. A method of manufacturing an electroluminescent device.
The method according to claim 6,
And removing the second inorganic pattern after removing the fourth metal oxide layer in the amorphous state.

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