KR20150012501A - Sputtering apparatus and method for forming thin film using the same - Google Patents

Abstract

Disclosed is a sputtering apparatus. Embodiments of the present invention provide the sputtering apparatus and a method for forming a thin film using the same which can fix the location of a magnet unit and form an even film when in operation. The present invention comprises: a housing; a rotary bracket installed in the housing to be able to rotate; a target unit installed in the rotary bracket; a magnet unit placed inside the target unit and installed to allow relative motion with the rotary bracket; and a loading unit which is mounted in at least one location between the rotary bracket and the magnet unit or between the housing and the magnet unit, loading the magnet unit in the longitudinal direction of the magnet unit.

Description

[0001] The present invention relates to a sputtering apparatus and a thin film forming method using the same,

The present invention relates to a sputtering apparatus and a thin film forming method using the same.

Semiconductor devices, display devices, and other electronic devices include a plurality of thin films. There are various methods of forming such a plurality of thin films, among which a vapor deposition method is one method.

The deposition method includes, for example, sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), and various other methods.

On the other hand, among the display devices, the organic light emitting display device has a wide viewing angle, excellent contrast, and fast response speed, and is receiving attention as a next generation display device.

The organic light emitting diode display includes an intermediate layer having an organic light emitting layer between a first electrode and a second electrode facing each other, and includes at least one of various thin films. At this time, a sputtering process may be used to form a thin film of an organic light emitting display device.

In such a sputtering process, a plasma discharge occurs between the target and the substrate, and it is not easy to ensure such uniformity of the plasma discharge characteristics.

Particularly, since the organic light emitting display has a large size and high resolution is required, uniform characteristics of the thin films included in the organic light emitting display are required. However, it is difficult to maintain plasma discharge characteristics when a thin film is formed by using a sputtering process, and thus there is a limit in forming a thin film having desired characteristics.

Embodiments of the present invention provide a sputtering apparatus capable of fixing a position of a magnet unit during operation and capable of forming a uniform film, and a method of forming a thin film using the sputtering apparatus.

According to an aspect of the present invention, there is provided a method of operating a mobile robot comprising a housing, a rotating bracket rotatably installed in the housing, a target portion mounted on the rotating bracket, And a force unit installed in at least one of the magnet unit, the rotating bracket, and the magnet unit and between the housing and the magnet unit to apply the magnet unit in the longitudinal direction of the magnet unit.

In addition, the housing may include a first housing and a second housing disposed to face the first housing.

The rotation bracket may include a first rotation bracket rotatably installed in the first housing and a second rotation bracket rotatably installed in the second housing.

In addition, one end of the magnet may be installed to be movable relative to the first rotating bracket, and the other end of the magnet may be fixed to the second housing.

The second housing includes a first plate inserted and supported by the magnet portion and inserted into the second rotation bracket, a second plate connected to the first plate and configured to surround the second rotation bracket, And a third plate formed to surround the second plate.

The apparatus may further include a first sealing member disposed between the first plate and the second rotation bracket.

The apparatus may further include a second sealing member disposed between the second rotation bracket and the second plate.

The apparatus may further include a backing tube installed to fix the target portion and the rotation bracket.

The engaging portion may include a contact portion provided to be in contact with the magnet portion and an elastic portion provided inside the rotation bracket and pressing the contact portion.

The engaging portion may include a first engaging portion that is in contact with the magnet portion and applies a first force to the magnet portion in the first direction, and a second engaging portion that is provided to face the first engaging portion, And a second force applying unit that applies a second force different from the first force in the second direction.

The first force may be greater than the second force.

In addition, the first direction and the second direction may be opposite to each other.

Further, the apparatus may further include a friction reducing portion provided between the magnet portion and the rotation bracket.

In addition, the friction reducing portion may reduce the frictional force between the magnet portion and the rotation bracket during relative movement between the magnet portion and the rotation bracket.

The friction reducing portion may be provided on the lower surface of the magnet portion.

According to another aspect of the present invention, there is provided a mobile robot comprising: a housing; a rotation bracket rotatably installed in the housing; a target portion mounted on the rotation bracket; A magnet portion and a friction reducing portion provided between the rotating bracket and the magnet portion.

In addition, the friction reducing portion may reduce the frictional force between the magnet portion and the rotation bracket during relative movement between the magnet portion and the rotation bracket.

The friction reducing portion may be provided on the lower surface of the magnet portion.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including the steps of depositing a substrate in a chamber, depositing a deposition material on the substrate while rotating the target portion in a state where a magnet portion inside the target portion is fixed, Wherein depositing the deposition material on the substrate is performed in a state in which a force is applied to the magnet portion at least at one end of the magnet portion in the longitudinal direction of the target portion.

Embodiments of the present invention can improve the uniformity of deposition by forming a uniform magnetic field by preventing the movement of the magnet portion. Further, the embodiments of the present invention can minimize the generation of arcs due to the movement of the magnet unit, thereby increasing the operating rate of the apparatus.

1 is a perspective view schematically showing a sputtering apparatus according to an embodiment of the present invention.
2 is a cross-sectional view taken along line?
3 is a cross-sectional view taken along the line?
4 is a cross-sectional view taken along the line IV-IV in FIG.
FIG. 5 is a cross-sectional view schematically showing an organic light emitting diode display manufactured using the sputtering apparatus of FIG.
6 is an enlarged view of F in Fig.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions. The terms first, second, etc. may be used to describe various elements, but the elements should not be limited by terms. Terms are used only for the purpose of distinguishing one component from another.

FIG. 1 is a perspective view schematically showing a sputtering apparatus 100 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along line? -? In FIG. 1, and FIG. Sectional view taken along the line. 4 is a cross-sectional view taken along the line IV-IV in FIG.

1 to 4, a sputtering apparatus 100 includes a chamber 110 including a deposition space in which a substrate S is disposed and a deposition process is performed on the substrate S, A rotating bracket 131 and 133 rotatably installed in the housing 120 and a target portion 140 mounted on the rotating brackets 131 and 133. The housing 120 includes a housing 120, The sputtering apparatus 100 includes a magnet unit 150 disposed on the inner shaft of the target unit 140 and installed to be able to move relative to the rotation brackets 131 and 133, a gap between the rotation brackets 131 and 133 and the magnet unit 150, And may include force portions 161 and 163 installed in at least one of the housing 120 and the magnet portion 150 to apply the magnet portion 150 in the longitudinal direction of the magnet portion 150. The sputtering apparatus 100 includes backing tubes 171 and 173 installed to fix the target portion 140 and the rotation brackets 131 and 133 and a friction reducing portion 180 provided between the magnet portion 150 and the rotation brackets 131 and 133 ).

The sputtering apparatus 100 may include backing tubes 171 and 173 installed to fix the target portion 140 and the rotation brackets 131 and 133. The sputtering apparatus 100 may include a friction reducing portion 180 disposed between the magnet portion 150 and the rotation brackets 131 and 133.

The chamber 110 can be connected to a pump (not shown) to control the pressure atmosphere of the deposition process and accommodates and protects the substrate S, the target portion 140, and the like. In addition, the chamber 110 may have one or more outlets (not shown) for entering and exiting the substrate S. Although only the bottom surface of the chamber 110 is shown in FIG. 1, the chamber 110 may be similar to a box.

The substrate S may be placed on the substrate support 105. The substrate support 105 prevents the substrate S from moving or shaking during the deposition process for the substrate S. To this end, the substrate support 105 may include a clamp (not shown). The substrate support 105 may also include one or more adsorption holes (not shown) for adsorption between the substrate support 105 and the substrate S. The substrate support 105 is preferably formed of a material having high heat resistance and durability so as to prevent denaturation and breakage due to heat during the deposition process.

The target portion 140 is arranged to face the substrate S. At this time, the target portion 140 may be formed in a cylindrical shape. In addition, the target portion 140 provides a deposition material to the substrate S while rotating during the deposition process, so that a deposition film is formed on the substrate S. To this end, the length of the target portion 140 is preferably at least equal to or greater than the width of the substrate S in one direction.

Meanwhile, the target portion 140 may be supported by a backing plate 140a. The backing plate 140a has a shape similar to that of the hollow target-shaped portion 140 and may be disposed inside the target portion 140 to support the target portion 140. [ In addition, the backing plate 140a can maintain the temperature of the target portion 140 constant during the deposition process, and power can be applied to the backing plate 140a through a power source (not shown). For example, RF or DC power may be applied to the backing plate 140a, and the backing plate 140a may serve as a cathode. The target portion 140 connected to the backing plate 140a can function as a cathode. Of course, the target portion 140 may be used without the backing plate 140a, in which case the power may be applied to the target portion 140. [ Hereinafter, a backing plate 140a is provided in the target 140 for convenience of explanation.

The magnet unit 150 may be installed inside the target unit 140. At this time, the magnet unit 150 may include a magnet support unit 153 installed inside the target unit 140 in the longitudinal direction of the target unit 140. In addition, the magnet unit 150 may include a magnet member 151 mounted on the magnet support unit 153.

The magnet member 151 may have a shape elongated in the longitudinal direction of the target portion 140 in parallel with the target portion 140. At this time, the magnet member 151 and the magnet supporting portion 153 do not rotate during the deposition process while the target portion 140 described above rotates. That is, the magnet member 151 and the magnet supporting portion 153 are not connected to the target portion 140 and the backing plate 140a.

The magnet member 151 generates a magnetic field capable of controlling the plasma discharge. For example, the magnet member 151 may include a first magnet member 151a and a pair of second magnet members 151b located on both sides of the first magnet member 151a. The first magnet member 151a and the pair of second magnet members 151b are disposed so that the polarities thereof are opposite to each other so that the magnetic field generated by the magnet member 151 is focused on a portion of the target portion 140 So that the plasma discharge can also be controlled to be concentrated in a portion of the target portion 140. [ In particular, the magnet member 151 may be formed in various ways other than the case described above. For example, two or four or more magnet members 151 may be provided, and may be disposed in parallel or angled as described above. Hereinafter, for convenience of explanation, the magnet member 151 will be described in detail with reference to the case where the first magnet member 151a and the second magnet member 151b are included as described above.

Meanwhile, the magnet unit 150 may be connected to the rotation brackets 131 and 133 and the housing 120. Specifically, the rotation brackets 131 and 133 may include a first rotation bracket 131 and a second rotation bracket 133. In addition, the housing 120 may include a first housing 121 and a second housing 123. The first rotation bracket 131 may be rotatably mounted on the first housing 121 and the second rotation bracket 133 may be rotatably mounted on the second housing 123. The first housing 121 and the second housing 123 may be disposed so as to face each other and the first rotation bracket 131 and the second rotation bracket 133 may be disposed to face each other.

At this time, the magnet unit 150 may be installed so as to be able to move relative to the first rotation bracket 131 and the second housing 123. More specifically, one end of the magnet support portion 153 may be inserted into the first rotation bracket 131 and may not rotate when the first rotation bracket 131 rotates. The other end of the magnet support portion 153 may be installed and fixed to the second housing 123.

The second housing 123 may include a first plate 123a to which the magnet unit 150 is inserted and inserted and inserted into the second rotation bracket 133. In particular, the first plate 123a is formed in a spring shape to absorb the vibration of the magnet unit 150. [ The second housing 123 may include a second plate 123b which is formed to surround the second rotation bracket 133 while being stretched with the first plate 123a. The second housing 123 may include a third plate 123c formed to surround the second plate 123b. The first plate 123a to the third plate 123c may be connected to the chamber 110 to support the second rotation bracket 133.

Meanwhile, the sputtering apparatus 100 may include a first sealing member 191 disposed between the first plate 123a and the second rotation bracket 133. At this time, the first sealing member 191 may be disposed between the outer surface of the first plate 123a and the inner surface of the second rotation bracket 133. In particular, the first sealing member 191 may be formed in a ring shape. Specifically, the first sealing member 191 may be in the form of a water ring formed to block moisture.

The sputtering apparatus 100 may include a second sealing member 193 disposed between the second rotation bracket 133 and the second plate 123b. At this time, the second sealing member 193 may be disposed between the outer surface of the second rotation bracket 133 and the inner surface of the second plate 123b. In particular, the second sealing member 193 may be formed in a ring shape. Specifically, the second sealing member 193 may be in the form of a vacuum ring for blocking air.

On the other hand, the backing plate 140a and the target portion 140 can be rotated by the second rotation bracket 133. More specifically, the second rotation bracket 133 is connected to a driving unit (not shown) such as the driving belt 101 to receive the driving force, thereby rotating the backing plate 140a and the target unit 140. At this time, the power source (not shown) may be connected to the second rotation bracket 133 and the backing plate 140a may be powered through the second rotation bracket 133.

The first rotation bracket 131 and the second rotation bracket 133 are elongated at both ends of the backing plate 140a by the first housing 121 and the second housing 123, Lt; / RTI > The backing plate 140a and the first rotation bracket 131 or the backing plate 140a and the second rotation bracket 133 may be connected and fixed by the backing tubes 171 and 173. [ The backing tubes 171 and 173 include a first backing tube 171 connecting the backing plate 140a and the first rotation bracket 131 and a second backing tube 171 connecting the backing plate 140a and the second rotation bracket 133 Two backing tubes 173. The first backing tube 171 and the second backing tube 173 can connect the target portion 140 and the first rotation bracket 131 or the target portion 140 and the second rotation bracket 133, have. The backing plate 140a may be integrally formed with the first rotation bracket 131 and the second rotation bracket 133 while the backing tubes 171 and 173 are omitted. The first backing tube 171 connects the backing plate 140a and the first rotation bracket 131 and the second backing tube 173 connects the backing plate 140a and the second rotation bracket 131. [ The rotation bracket 133 will be described in detail.

The cooling water inflow pipe and the cooling water discharge pipe are connected to the inside of the target portion 140 to circulate the cooling water. The cooling water inflow pipe (not shown) and the cooling water discharge pipe (not shown) are formed in the second housing 123 . Accordingly, the heat generated in the target portion 140 during the sputtering process is absorbed into the cooling water through the backing plate 140a, so that the temperature of the target portion 140 can be kept constant. Thereby, the efficiency of the sputtering process can be improved. Hereinafter, for convenience of explanation, the cooling water inflow pipe and the cooling water discharge pipe are not formed will be described in detail.

The target portion 140 exposes a region facing the substrate S, and the exposed region becomes a sputtering region. At this time, the target portion 140 may be partially or entirely exposed according to various embodiments. Specifically, a shield portion (not shown) may be provided around the target portion 140 when only a part of the target portion 140 is exposed. Further, when the target portion 140 is completely exposed, the shield portion may not be provided.

At this time, when the shield portion is provided, the shield portion is fixed without rotating together with the cylindrical target portion 140. Therefore, the sputtering region of the target portion 140 is continuously replaced with a new region, whereby the use efficiency of the target portion 140 can be improved and the use period of the target portion 140 can be increased.

Particularly, the shield portion is disposed such that the distance between the target portion 140 and the shield portion is smaller than the thickness of the ion sheath. When the distance between the target portion 140 and the shield portion is smaller than the thickness of the ion sheath as described above, the shield portion and the target portion of the ion- Discharge is not generated between the electrodes 140 and 140. Therefore, it is possible to prevent an arc caused by an abnormal discharge occurring at a point outside the sputtering region.

The shield portion may be formed of a conductive material to perform an anode function. That is, as the voltage for generating the plasma is applied to the target portion 140 and the shield portion, the substrate S and the chamber 110 can be maintained in the floating state.

When the substrate S and the chamber 110 are maintained in a floating state, when the anions, electrons, and the like generated due to the plasma generation proceed to the anode side, the substrate S deviates from the motion path of negative ions and electrons, It is possible to prevent the damage of the substrate S and the generation of an arc. In addition, even if the distance between the substrate S and the target portion 140 is reduced as the substrate S maintains the floating state, it is possible to prevent damage to the substrate S, thereby increasing the deposition rate , The efficiency of the deposition process can be improved.

Hereinafter, for convenience of explanation, the case where the shield portion does not exist will be described in detail.

The engaging portions 161 and 163 may include a first engaging portion 161 disposed inside the first rotating bracket 131 and a second engaging portion 163 disposed inside the first plate 123a. At this time, the first pressing portion 161 and the second pressing portion 163 are opposed to each other so that the magnet portion 150 can be moved in the longitudinal direction of the magnet portion 150. That is, the first and second engaging portions 161 and 163 are installed at both ends of the magnet portion 150 to apply a force to both ends of the magnet portion 150 in the direction of the center of the magnet portion 150 .

Further, the first engaging portion 161 and the second engaging portion 163 can apply the magnet portions 150 with different forces. Particularly, the first pressing portion 161 can apply a first force to the magnet portion 150 in the first direction. Also, the second pressing portion 163 may apply a second force to the magnet portion 150 in the second direction. At this time, the first direction and the second direction are opposite to each other as described above, and the first force and the second force may be different from each other. In particular, the first force may be formed larger than the second force.

The first and second engaging portions 161 and 163 may be similar to each other. For example, the first pressing portion 161 includes the first contacting portion 161a and the first pressing portion 161b, and the second pressing portion 163 includes the second contacting portion 163a and the second pressing portion 161b, (163b). At this time, the first contact portion 161a and the second contact portion 163a may contact one end and the other end of the magnet portion 150, respectively. The first contact portion 161a may be installed inside the first rotation bracket 131 and the second contact portion 163a may be installed inside the first plate 123a. The first elastic portion 161b and the second elastic portion 163b may be installed to be inserted into the first rotation bracket 131 and the first plate 123a, respectively. The first elastic portion 161b may be disposed so as to contact the inner surface of the first rotation bracket 131 and the first contact portion 161a and the second elastic portion 163b may contact the inner surface of the first plate 123a, And may be provided so as to be in contact with the second contact portion 163a.

The first elastic portion 161b and the second elastic portion 163b may be formed of various materials. For example, the first elastic portion 161b and the second elastic portion 163b may be formed of an elastic material such as rubber, silicon, or the like. The first elastic portion 161b and the second elastic portion 163b may be formed as a spring. In particular, the first elastic portion 161b and the second elastic portion 163b may be formed of compression springs. Hereinafter, for convenience of explanation, the first elastic part 161b and the second elastic part 163b are formed in the form of a compression spring.

Meanwhile, the friction reducing portion 180 may be installed between the magnet portion 150 and the first rotation bracket 131 as described above. Particularly, the friction reducing part 180 can reduce the frictional force between the magnet part 150 and the first rotation bracket 131 during the relative movement of the magnet part 150 and the first rotation bracket 131. At this time, the friction reducing portion 180 and the magnet portion 150 may be formed in various shapes. For example, the friction reducing portion 180 may be formed in a gear shape. In this case, the first rotation bracket 131 is formed in a female-threaded shape to rotate the friction reduction portion 180 when the first rotation bracket 131 rotates. Further, the friction reducing portion 180 may be formed in a roller shape in addition to the gear shape. In particular, the friction reducing portion 180 contacts the inner surface of the first rotation bracket 131 and can rotate together with the first rotation bracket 131 when the first rotation bracket 131 rotates. The friction reducing unit 180 is not limited to the above and may include any structure or device for reducing the friction between the first rotating bracket 131 and the magnet unit 150 during rotation of the first rotating bracket 131 can do. Hereinafter, for convenience of explanation, the friction reducing portion 180 is formed in a roller shape will be described in detail.

At least one friction reducing portion 180 may be provided on the lower surface of the magnet portion 150. Specifically, the frictional reducing section 180 may include a first frictional reducing section 181 and a second frictional reducing section 183 forming a certain angle with the first frictional reducing section 181. The first friction reducing portion 181 and the second friction reducing portion 183 may prevent the magnet portion 150 from rotating together with the first rotation bracket 131 when the first rotation bracket 131 rotates The frictional force due to the contact between the magnet portion 150 and the first rotation bracket 131 can be reduced.

Hereinafter, the operation and effects of the sputtering apparatus 100 will be briefly described.

First, a substrate S is placed in a chamber 110 of a sputtering apparatus 100 and a target portion 140, which can provide a material for forming a deposition film on the substrate S, . After the plasma state is formed through the gas or the like injected into the chamber 110, the excited particles collide with the target portion 140 and the particles separated from the target portion 140 reach the substrate S, .

Specifically, when the particles excited by the target portion 140 collide with each other as described above, the driving portion may be operated to rotate the target portion 140. At this time, the driving force of the driving unit can be transmitted to the second rotation bracket 133 through the driving belt 101 and the like as described above. The second rotation bracket 133 is rotated according to the operation of the driving unit, and the backing plate 140a can be rotated. At this time, the first rotation bracket 131 connected to the backing plate 140a may also be rotated.

At this time, since the deposition process is performed while the target portion 140 rotates during the deposition process, the deposition process can be performed while uniformly using the entire surface of the target portion 140. Accordingly, the use efficiency of the target portion 140 is improved, the use period of the target portion 140 is increased, and the deposition process through the sputtering device 100 is efficiently performed. In addition, the magnet member 151 may be provided inside the target portion 140 to improve the deposition efficiency with respect to the substrate S.

While the first rotating bracket 131 and the second rotating bracket 133 are rotated as described above, the first and second pressing portions 161 and 163 are urged by the first force And a second force. Particularly, the first pressing portion 161 can apply a first force in the center direction at one end of the magnet supporting portion 153 and the second pressing portion 163 can apply a second force in the center direction at the other end of the magnet supporting portion 153, .

At this time, the length of the first elastic part 161b may be smaller than the length of the second elastic part 163b. In particular, the restoring force stored in the first elastic part 161b may be greater than the restoring force stored in the second elastic part 163b. When the first force and the second force are applied as described above, the position of the magnet supporting portion 153 may not be changed by an external force.

Specifically, when the first rotation bracket 131, the target portion 140, and the second rotation bracket 133 are rotated, the target portion 140 may be variously changed in position by rotation, external environment, or the like. Also, the position of the magnet unit 150 installed in the target portion 140 may be changed. In particular, in the case of the magnet unit 150, one end of the magnet support unit 153 inserted in the first rotation bracket 131 can be moved out of position to move in the Z direction of FIG. In such a case, the magnetic field formed by the magnet member 151 may be varied to change the path of excited particles.

At this time, the first supporting portion 161 and the second pressing portion 163 can prevent the magnet supporting portion 153 from moving by applying the magnet supporting portion 153 at both ends. Therefore, the magnet support portion 153 can maintain the initial state, and the magnetic field formed by the magnet member 151 can be uniformly formed in the longitudinal direction of the magnet portion 150.

In addition, when the target portion 140 rotates as described above, the magnet supporting portion 153 and the first rotation bracket 131 can contact each other. Specifically, the magnet supporting portion 153 can be brought into contact with the first rotation bracket 131 by the rotation of the first rotation bracket 131 and the load of the magnet supporting portion 153.

When the first rotation bracket 131 is in contact with the first rotation bracket 131 according to the rotation of the first rotation bracket 131 as described above, due to the frictional force between the first rotation bracket 131 and the magnet support portion 153 A part of the magnet supporting portion 153 may be worn. In particular, when the magnet supporting portion 153 is partially worn, the magnet supporting portion 153 can be disposed in an inclined manner. At this time, the position of the magnetic field formed by the magnet member 151 can be changed due to the inclination of the magnet supporting portion 153.

At this time, the friction reducing part 180 can prevent the magnet supporting part 153 from being abraded due to the contact between the magnet supporting part 153 and the first rotation bracket 131 as described above. Specifically, as described above, the friction reducing portion 180 is rotatably installed on the magnet supporting portion 153 and can rotate as the first rotation bracket 131 rotates. The magnet supporting portion 153 prevents the first rotating bracket 131 and the magnet supporting portion 153 from directly contacting with each other and also prevents the frictional force during the relative movement between the first rotating bracket 131 and the magnet supporting portion 153 Can be reduced.

The sputtering apparatus 100 can minimize the change of the magnetic field due to the change of the position of the magnet unit 150 by fixing the position of the magnet unit 150 installed inside the target unit 140 when the target unit 140 rotates . In addition, the sputtering apparatus 100 can reduce the arc generated by forming a uniform magnetic field at the time of film formation, thereby increasing the operation rate of the equipment.

FIG. 5 is a cross-sectional view schematically showing an organic light emitting display manufactured using the sputtering apparatus of FIG. 1; 6 is an enlarged view of F in Fig.

Referring to FIGS. 5 and 6, an organic light emitting display apparatus 10 is formed on a substrate 30. The substrate 30 may be formed of a glass material, a plastic material, or a metal material.

On the substrate 30, a flat surface is provided on the substrate 30, and a buffer layer 31 containing an insulating material is formed to prevent moisture and foreign matter from penetrating toward the substrate 30.

A thin film transistor (TFT) 40, a capacitor 50, and an organic light emitting device 60 are formed on the buffer layer 31. The thin film transistor 40 mainly includes an active layer 41, a gate electrode 42, and a source / drain electrode 43. The organic light emitting device 60 includes a first electrode 61, a second electrode 62, and an intermediate layer 63. The capacitor 50 includes a first capacitor electrode 51 and a second capacitor electrode 52.

Specifically, an active layer 41 formed in a predetermined pattern is disposed on the upper surface of the buffer layer 31. The active layer 41 may contain an inorganic semiconductor material such as silicon, an organic semiconductor material, or an oxide semiconductor material, and may optionally be formed by implanting a p-type or n-type dopant.

A gate insulating film 32 is formed on the active layer 41. A gate electrode 42 is formed on the gate insulating film 32 to correspond to the active layer 41. The first capacitor electrode 51 may be formed on the gate insulating film 32 and may be formed of the same material as the gate electrode 42.

An interlayer insulating film 33 is formed so as to cover the gate electrode 42 and a source / drain electrode 43 is formed on the interlayer insulating film 33 so as to be in contact with a predetermined region of the active layer 41. A second capacitor electrode 52 may be formed on the insulating film 33 and may be formed of the same material as the source / drain electrode 43.

 A passivation layer 34 may be formed to cover the source / drain electrode 43 and a separate insulating layer may be formed on the passivation layer 34 for planarization of the thin film transistor 40. [

A first electrode (61) is formed on the passivation layer (34). The first electrode 61 is formed to be electrically connected to any one of the source / drain electrodes 43. The pixel defining layer 35 is formed so as to cover the first electrode 61. A predetermined opening 64 is formed in the pixel defining layer 35 and an intermediate layer 63 having an organic light emitting layer is formed in a region defined by the opening 64. [ And the second electrode 62 is formed on the intermediate layer 63.

An encapsulation layer 70 is formed on the second electrode 62. The sealing layer 70 may contain an organic material or an inorganic material, and may be a structure in which organic materials and inorganic materials are alternately laminated.

As a specific example, the sealing layer 70 can be formed by using the sputtering apparatus 100 described above. That is, after the substrate 30 on which the second electrode 62 is formed is put into the chamber 110, a desired layer can be formed by using the sputtering apparatus 100.

In particular, the sealing layer 70 comprises an inorganic layer 71 and an organic layer 72, the inorganic layer 71 comprises a plurality of layers 71a, 71b and 71c, and the organic layer 72 comprises a plurality of layers (72a, 72b, 72c). At this time, a plurality of layers 71a, 71b, 71c of the inorganic layer 71 can be formed by using the sputtering apparatus 100. [

However, the present invention is not limited thereto. The gate electrode 42, the source / drain electrode 43, the first electrode 61, and the second electrode 62 of the organic light emitting diode display 10 using the above-described sputtering apparatus 100 .

It is also possible to form other insulating films such as the buffer layer 31, the gate insulating film 32, the interlayer insulating film 33, the passivation layer 34 and the pixel defining film 35 by using the above-described sputtering apparatus 100 .

Although the present invention has been described in connection with the above-mentioned preferred embodiments, it is possible to make various modifications and variations without departing from the spirit and scope of the invention. Accordingly, it is intended that the appended claims cover all such modifications and variations as fall within the true spirit of the invention.

100: Sputtering apparatus 150: Magnet portion
101: drive belt 151: magnet member
105: substrate supporting portion 151a: first magnet member
110: chamber 151b: second magnet member
120: Housing 153: Magnet support
121: first housing 161: first pressing portion
123a: first plate 161a: first contact portion
123b: second plate 161b: first elastic portion
123: second housing 163: second pressing portion
123c: third plate 163a: second contact portion
131: first rotation bracket 163b: second elastic part
133: second rotating bracket 171: first backing tube
140: target portion 173: second backing tube
140a: Backing plate 180: Friction reducing part
181: first friction reducing section 183: second friction reducing section
191: first sealing member 193: second sealing member

Claims (19)

housing;
A rotation bracket rotatably installed in the housing;
A target portion mounted on the rotation bracket;
A magnet portion disposed inside the target portion and installed to be able to move relative to the rotation bracket; And
And a force part installed in at least one of the rotation bracket and the magnet part and between the housing and the magnet part to apply the magnet part in the longitudinal direction of the magnet part. The method according to claim 1,
The housing includes:
A first housing; And
And a second housing installed to face the first housing. 3. The method of claim 2,
The rotation bracket
A first rotation bracket rotatably installed in the first housing; And
And a second rotating bracket rotatably installed in the second housing. The method of claim 3,
Wherein one end of the magnet part is installed to be movable relative to the first rotation bracket and the other end of the magnet part is fixed to the second housing. The method of claim 3,
The second housing includes:
A first plate inserted and supported by the magnet portion and inserted into the second rotation bracket;
A second plate connected to the first plate and configured to surround the second rotation bracket; And
And a third plate formed to surround the second plate. 6. The method of claim 5,
And a first sealing member disposed between the first plate and the second rotation bracket. 6. The method of claim 5,
And a second sealing member disposed between the second rotation bracket and the second plate. The method according to claim 1,
And a backing tube installed to fix the target portion and the rotation bracket. The method according to claim 1,
Wherein,
A contact portion installed to be in contact with the magnet portion; And
And an elastic portion provided inside the rotation bracket and pressing the contact portion. The method according to claim 1,
Wherein,
A first engaging portion contacting the magnet portion and applying a first force to the magnet portion in a first direction; And
And a second force applying unit that applies a second force different from the first force to the magnet unit in a second direction different from the first direction, the second force unit facing the first force application unit. 11. The method of claim 10,
Wherein the first force is greater than the second force. 11. The method of claim 10,
Wherein the first direction and the second direction are opposite to each other. The method according to claim 1,
And a friction reducing portion provided between the magnet portion and the rotation bracket. 14. The method of claim 13,
Wherein the frictional reducing unit reduces frictional force between the magnet unit and the rotation bracket when the magnet unit and the rotation bracket are relatively moved. 14. The method of claim 13,
Wherein at least one of the friction reducing portions is provided on a lower surface of the magnet portion. housing;
A rotation bracket rotatably installed in the housing;
A target portion mounted on the rotation bracket;
A magnet portion disposed inside the target portion and installed to be able to move relative to the rotation bracket; And
And a friction reducing portion provided between the rotation bracket and the magnet portion. 17. The method of claim 16,
Wherein the frictional reducing unit reduces frictional force between the magnet unit and the rotation bracket when the magnet unit and the rotation bracket are relatively moved. 17. The method of claim 16,
Wherein at least one of the friction reducing portions is provided on a lower surface of the magnet portion. Introducing a substrate into the chamber; And
And depositing a deposition material on the substrate while rotating the target portion while the magnet portion inside the target portion is fixed, the deposition portion being disposed to face the substrate in the chamber,
Wherein depositing the deposition material on the substrate is performed in a state in which the magnet portion is pressed against the magnet portion in a longitudinal direction of the target portion at least at one end thereof.

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