KR102152949B1 - Sputtering apparatus, method for forming thin film using the same and method for manufacturing organic light emitting display apparatus - Google Patents

Abstract

The present invention relates to a sputtering apparatus for performing a deposition process on a substrate, comprising: a chamber including a deposition space in which a substrate is disposed and a deposition process is performed on a substrate, a rotating target disposed in the chamber to face the substrate, Sputtering apparatus comprising an internal magnet member disposed in the rotational target and an external magnet member disposed in the chamber to face the substrate and spaced apart from the rotational target outside the rotational target, a thin film forming method, and organic light emission A method of manufacturing a display device is provided.

Description

A sputtering apparatus, a method for forming a thin film using the same, and a method for manufacturing an organic light emitting display apparatus TECHNICAL FIELD [0001] A sputtering apparatus, method for forming thin film using the same and method for manufacturing organic light emitting display apparatus

The present invention relates to a sputtering device, a method of forming a thin film using the same, and a method of manufacturing an organic light-emitting display device. More specifically, a sputtering device capable of efficiently performing a thin film formation process and easily improving properties of a deposited film, and forming a thin film using the same It relates to a method and a method of manufacturing an organic light emitting display device.

Semiconductor devices, display devices, and other electronic devices have a plurality of thin films. There are various methods of forming such a plurality of thin films, and one of them is a deposition method.

The deposition method includes, for example, sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), and other various methods.

Meanwhile, among display devices, an organic light emitting display device is attracting attention as a next-generation display device because it has a wide viewing angle, excellent contrast, and high response speed.

The organic light-emitting display device includes an intermediate layer including an organic emission layer between a first electrode and a second electrode opposite to each other, and includes at least one of various thin films. In this case, a sputtering process is also used to form a thin film of the organic light emitting display device.

During the sputtering process, plasma discharge occurs between the target and the substrate, but it is not easy to ensure uniformity of such plasma discharge characteristics.

In particular, as organic light emitting display devices become larger and require high resolution, uniform characteristics of thin films included in the organic light emitting display devices are required. However, when forming a thin film using a sputtering process, it is difficult to maintain plasma discharge characteristics, so there is a limit to forming a thin film having desired characteristics.

The present invention can provide a sputtering deposition apparatus capable of efficiently performing a thin film formation process and easily improving properties of a deposition film, a thin film formation method using the same, and a method of manufacturing an organic light emitting display device.

The present invention relates to a sputtering apparatus for performing a deposition process on a substrate, comprising: a chamber including a deposition space in which a substrate is disposed and a deposition process is performed on a substrate, a rotating target disposed in the chamber to face the substrate, Disclosed is a sputtering apparatus comprising an inner magnet member disposed in the rotational target, and an outer magnet member disposed in the chamber to face the substrate and spaced apart from the rotational target outside the rotational target.

In the present invention, the external magnet member may include a first magnet member and a second magnet member disposed on both sides of the rotatable target.

In the present invention, the first magnet member may be disposed to face one side area of the rotatable target, and the second magnet member may be disposed to correspond to a side area opposite to the side area of the rotatable target.

In the present invention, the external magnet member may have an elongated shape parallel to the longitudinal direction of the rotatable target.

In the present invention, the outer magnet member may be disposed parallel to the inner magnet member.

In the present invention, the distance between the external magnet member and the substrate may be the same.

In the present invention, the external magnet member may be disposed to be inclined by a predetermined angle with respect to the substrate so that the distance between the external magnet member and the substrate gradually changes.

In the present invention, the external magnet member may include a plurality of divided magnet members, and each of the plurality of divided magnet members may be independently disposed to independently control the distance between the plurality of divided magnet members and the substrate. have.

In the present invention, the outer magnet member may have at least a length corresponding to the inner magnet member.

In the present invention, the rotatable target may be formed in a hollow column shape, and a backing plate supporting the rotatable target may be disposed inside the rotatable target.

In the present invention, the rotational target may function as a cathode.

In the present invention, an electrode member disposed outside the rotational target may be provided to face the substrate and to be spaced apart from the rotational target.

In the present invention, the electrode member may include a first electrode member and a second electrode member disposed on both sides of the rotational target.

In the present invention, the electrode member may be disposed between the external magnet member and the rotatable target.

In the present invention, the electrode member may function as an anode.

According to another aspect of the present invention, there is provided a method for forming a thin film on a substrate using a sputtering apparatus, comprising: introducing the substrate into a chamber, and disposed to face the substrate in the chamber and an internal magnet member disposed therein. And depositing a deposition material on the substrate using a rotational target, and depositing the deposition material on the substrate may be configured to face the substrate and be spaced apart from the rotational target outside the rotational target. Disclosed is a method of forming a thin film comprising the step of controlling a magnetic field around the rotating target by using an external magnet member disposed thereon.

In the present invention, disposing an electrode member disposed outside the rotational target so as to face the substrate and spaced apart from the rotational target, and applying a voltage to the electrode member in the step of depositing the deposition material on the substrate. It may further include a step.

According to another aspect of the present invention, there is provided a method of forming an organic light emitting display device using a sputtering device, comprising: introducing a substrate into a chamber, and disposed to face the substrate in the chamber, and an internal magnet member is disposed therein. And depositing a deposition material on the substrate using the rotated target, and the step of depositing the deposition material on the substrate may be opposite to the substrate and spaced apart from the rotational target outside the rotational target. Disclosed is a method of forming an organic light-emitting display device including controlling a magnetic field around the rotational target using an external magnet member disposed so as to be possible.

In the present invention, the organic light emitting display device includes a first electrode, a second electrode, an intermediate layer disposed between the first electrode and the second electrode and including an organic light emitting layer, and an encapsulation layer formed on the second electrode. And, it may be characterized in that the step of depositing the deposition material on the substrate to form the encapsulation layer.

In the present invention, the encapsulation layer includes at least one organic layer and at least one inorganic layer, and depositing the deposition material on the substrate to form at least one of the inorganic layers of the encapsulation layer. You can do it.

The deposition apparatus according to the present invention, a method of forming a thin film using the same, and a method of manufacturing an organic light emitting display device can efficiently perform a thin film formation process and easily improve properties of a deposited film.

1 is a perspective view schematically showing a sputtering apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1.
3 is a cross-sectional view taken along line III-III of FIG. 1.
4 and 5 are views showing modified examples of an external magnet member of the sputtering apparatus of FIG. 1.
6 is a diagram schematically showing a sputtering apparatus according to another embodiment of the present invention.
7 is a schematic cross-sectional view of an organic light emitting display device manufactured using the sputtering device of the present invention.
8 is an enlarged view of F of FIG. 7.

Hereinafter, the configuration and operation of the present invention will be described in detail with reference to embodiments of the present invention shown in the accompanying drawings.

1 is a perspective view schematically showing a sputtering apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, and FIG. 3 is a perspective view taken along line III-III of FIG. This is a cutaway cross section.

Referring to FIGS. 1 to 3, the sputtering apparatus 100 largely includes a chamber 101, a rotational target 130, an inner magnet member 150, an alignment member 140, and an outer magnet member 190.

The chamber 101 may be connected to a pump (not shown) to control the pressure atmosphere of the deposition process, and accommodates and protects the substrate S, the target 130 and the external magnet member 190. In addition, the chamber 101 may include one or more entrances (not shown) for entering and exiting the substrate S. Although only the bottom surface of the chamber 101 is shown in FIG. 1, this is for convenience of description, and the chamber 101 may have a shape similar to a box.

The substrate S may be disposed on the support part 105. The support part 105 prevents the substrate S from moving or shaking during the deposition process on the substrate S. To this end, the support part 110 may be provided with a clamp (not shown). In addition, for adsorption between the support part 110 and the substrate S, the support part 110 may include one or more adsorption holes (not shown). In addition, it is preferable that the support part 105 is formed of a material having high heat resistance and durability to prevent degeneration and damage caused by heat during the deposition process.

The rotational target 130 is disposed to face the substrate S. The rotational target 130 rotates during the deposition process and provides a deposition material to the substrate S so that a deposition film is formed on the substrate S. For this purpose, it is preferable that the length of the rotational target 130 is at least equal to or greater than the width of the substrate S in one direction.

A backing plate 120 may be provided to support the rotatable target 130. That is, the backing plate 120 formed in a shape similar to the rotary target 130 in the form of a hollow pillar may be disposed inside the rotary target 130 to support the rotary target 130. In addition, the backing plate 120 may maintain a constant temperature of the rotating target 130 during the deposition process, and power may be applied to the backing plate 120 through a power source (not shown). For example, RF or DC power may be applied to the backing plate 120 and the backing plate 120 may function as a cathode. Through this, the rotatable target 130 connected to the backing plate 120 may function as a cathode.

Of course, it is possible to use the rotating target 130 without the backing plate 120, in which case the power may be applied to the rotating target 130.

One or more inner magnet members 150 are disposed within the rotatable target 130. The inner magnet member 150 may have a shape extending long in parallel with the length direction of the rotational target 130. The inner magnet member 150 does not rotate while the above-described rotary target 130 rotates while the deposition process is in progress. That is, the inner magnet member 150 is not connected to the rotatable target 130 and the backing plate 120.

The internal magnet member 150 generates a magnetic field between the rotational target 130 and the substrate S. The number of the internal magnet members 150 may be variously determined so as to easily control the properties of the deposited film on the substrate S. In addition, it is possible to change the arrangement of the N-pole or S-pole of the inner magnet member 150 to selectively face the substrate S. In addition, when a plurality of inner magnet members 150 are disposed, it is of course possible to freely arrange each polarity.

The drive shaft 122 is disposed to function as a rotation shaft of the backing plate 120 and the rotational target 130. Specifically, the driving shaft 122 may be connected to a driving unit 124 such as a driving belt to receive a driving force to rotate the backing plate 120 and the rotary target 130. In this case, the above-described power source (not shown) may be connected to the drive shaft 122 to apply power to the backing plate 120 through the drive shaft 122.

The drive shaft 122 is formed in a form extending at both ends of the backing plate 120 and may be accommodated by the housing 129.

A backing tube 125 may be disposed to connect and fix the backing plate 120 and the drive shaft 122. Of course, the backing plate 120 and the drive shaft 122 may be integrally formed with the backing tube 125 omitted.

The cooling water inlet pipe 126 and the cooling water discharge pipe 127 are connected to the inside of the rotary target 130. Through this, the internal temperature of the rotatable target 130, the backing plate 120, and the backing plate 120 is maintained.

The external magnet member 190 is disposed outside the rotational target 130 so as to face the substrate S and spaced apart from the rotational target 130. The external magnet member 190 includes a first magnet member 191 and a second magnet member 192. The first magnet member 191 and the second magnet member 192 are disposed on both sides of the rotation type target 130 with the rotation type target 130 as the center, respectively. Specifically, the first magnet member 191 is disposed to face one side area of the rotatable target 130, and the second magnet member 192 is a first magnet member 191 among side areas of the rotatable target 130. It is arranged to face the opposite area of the area corresponding to ).

In addition, the first magnet member 191 and the second magnet member 192 have a form extending long in parallel with the length direction of the rotational target 130. Specifically, the first magnet member 191 and the second magnet member 192 may be disposed in parallel with the extension direction of the inner magnet member 150.

The operation and effect of the sputtering apparatus 100 of this embodiment will be briefly described.

A substrate S is disposed in the chamber 101 of the sputtering apparatus 100, and a rotating target 130 capable of providing a material for forming a deposition film on the substrate S is disposed to face the substrate S. do. In addition, after forming a plasma state through gas injected into the chamber 101, the excited particles collide with the rotating target 130, and the particles separated from the rotating target 130 reach the substrate S. A vapor deposition film is formed.

The sputtering device 100 of this embodiment includes a rotational target 130. During the deposition process, since the deposition process proceeds while the rotational target 130 rotates, the deposition process can be performed while uniformly using the entire surface of the rotational target 130. Through this, the use efficiency of the rotary target 130 is improved, the use cycle of the rotary target 130 is increased, and the deposition process through the sputtering device 100 is efficiently performed.

In addition, the internal magnet member 150 is provided inside the rotational target 130 to improve the deposition efficiency of the substrate S.

In addition, in this embodiment, by disposing the external magnet members 190 on both sides of the rotating target 130 around the rotating target 130, abnormal discharges that may occur due to the internal magnet member 150 are fundamentally blocked. To increase the deposition efficiency. That is, a magnetic field is generated between the rotating target 130 and the substrate S due to the internal magnet member 150, and plasma discharge is generated in this region. However, the inner magnet member 150 generates a non-uniform magnetic field around the rotatable target 130, particularly on the side surfaces. The non-uniform magnetic field generated on the side of the rotating target 130 causes abnormal plasma discharge, such as uneven wear of the rotating target 130, non-uniform thickness of the deposited film on the substrate S, and damage to the rotating target 130. Problems arise. However, in this embodiment, the external magnet members 190 are disposed to correspond to both sides of the rotating target 130 to suppress the generation of such a non-uniform magnetic field.

Through this, an abnormal magnetic field generated on the side of the rotating target 130 is blocked, so that uniform use of the rotating target 130 and an effect of improving the properties of the deposition film are easily realized.

In order to increase this effect, the outer magnet member 190 preferably has a length corresponding to at least the length of the inner magnet member 150.

4 and 5 are views showing modified examples of the external magnet member 190 of the sputtering apparatus of FIG. 1.

The above-described outer magnet member 190 is disposed in a direction parallel to the inner magnet member 150 disposed inside the rotatable target 130.

However, the present invention is not limited thereto. First, referring to FIG. 4, the outer magnet member 191 ′ is disposed to have an inclined shape to have a predetermined angle with respect to the inner magnet member 150 ′. That is, the external magnet member 191 ′ does not maintain a constant interval with respect to the substrate S, but has a different interval with respect to the substrate S for each region. That is, the distance between the external magnet member 191 ′ and the substrate S gradually changes. Through this, it is possible to easily adjust the density of the magnetic field around the rotating target 130. In addition, the thickness of the deposition film deposited on the substrate S may be controlled by adjusting the density of the magnetic field around the rotating target 130. That is, when the thickness of the deposition film in the right area of the substrate S is greater than the thickness of the deposition film in the left area based on FIG. 4 and it is necessary to make it uniform, the external magnet member 191' is disposed as shown in FIG. By lowering the magnetic field density in the right region of the typical target 130 ′, the deposition rate of the right region of the substrate S can be reduced compared to the left region.

Further, referring to FIG. 5, the external magnet member 191" includes a plurality of divided magnet members 191"A, 191"B, 191"C, 191"D, and 191"E. Each of the plurality of divided magnet members 191"A, 191"B, 191"C, 191"D, and 191"E may be divided and disposed independently of each other. Through this, the plurality of divided magnet members 191" The distance between each of A, 191"B, 191"C, 191"D, and 191"E and the substrate S can be variously controlled.

Through this, the density of the magnetic field around the rotating target 130" can be variously adjusted according to the area of the rotating target 130". In addition, the thickness of the deposition film deposited on the substrate S may be controlled by adjusting the density of the magnetic field around the rotational target 130".

6 is a diagram schematically showing a sputtering apparatus according to another embodiment of the present invention.

Referring to FIG. 6, the sputtering device 200 includes a chamber 201, a rotational target 230, an inner magnet member 250, an alignment member 240, an outer magnet member 290, and an electrode member 270. Include.

The chamber 201 may be connected to a pump (not shown) to control the pressure atmosphere of the deposition process, and accommodates and protects the substrate S, the target 230, and the external magnet member 290. In addition, the chamber 201 may include one or more entrances (not shown) for entering and exiting the substrate S.

The substrate S may be disposed on the support part 205. The support part 205 prevents the substrate S from moving or shaking during the deposition process on the substrate S. To this end, the support part 210 may be provided with a clamp (not shown). In addition, for adsorption between the support part 210 and the substrate S, the support part 210 may include one or more adsorption holes (not shown). In addition, the support 205 is preferably formed of a material having high heat resistance and durability to prevent degeneration and damage due to heat during the deposition process.

The rotational target 230 is disposed to face the substrate S. The rotational target 230 provides a deposition material to the substrate S while being rotated during the deposition process, so that a deposition film is formed on the substrate S. To this end, the length of the rotational target 230 is preferably equal to or greater than the width of the substrate S in one direction.

A backing plate 220 may be provided to support the rotatable target 230. That is, a backing plate 220 formed in a shape similar to the rotary target 230 in the form of a hollow pillar may be disposed inside the rotary target 230 to support the rotary target 230. Further, the backing plate 220 may maintain a constant temperature of the rotating target 230 during the deposition process, and power may be applied to the backing plate 220 through a power source (not shown). For example, the power of RF or DC power may be applied to the backing plate 220 and the backing plate 220 may function as a cathode.

Of course, the rotatable target 230 can be used without the backing plate 220, in which case power can be applied to the rotatable target 230.

One or more inner magnet members 250 are disposed within the rotatable target 230. The inner magnet member 250 may have a shape that extends in parallel with the length direction of the rotary target 230. The inner magnet member 250 does not rotate while the above-described rotary target 230 rotates while the deposition process is in progress. That is, the inner magnet member 250 is not connected to the rotatable target 230 and the backing plate 220.

The internal magnet member 250 generates a magnetic field between the rotational target 230 and the substrate S. The number of the internal magnet members 250 may be variously determined so as to easily control the properties of the deposited film on the substrate S. In addition, it is possible to change the arrangement of the N-pole or S-pole of the internal magnet member 250 to selectively face the substrate S. In addition, when a plurality of inner magnet members 250 are disposed, it is of course possible to freely arrange each polarity.

Since the drive shaft (not shown), the housing (not shown), the backing tube (not shown), the cooling water inlet pipe (not shown) and the cooling water discharge pipe (not shown) are the same as those of the above-described embodiment, detailed descriptions will be omitted.

The external magnet member 290 is disposed outside the rotational target 230 so as to face the substrate S and spaced apart from the rotational target 230. The external magnet member 290 includes a first magnet member 291 and a second magnet member 292. The first magnet member 291 and the second magnet member 292 are disposed on both sides of the rotation type target 230 with the rotation type target 230 as the center, respectively. Specifically, the first magnet member 291 is disposed to face one side area of the rotatable target 230, and the second magnet member 292 is the first magnet member 291 among the side areas of the rotatable target 230. ) Is arranged to face the opposite area of the opposite area.

In addition, the first magnet member 291 and the second magnet member 292 have a shape that extends long in parallel with the length direction of the rotational target 230. Specifically, the first magnet member 291 and the second magnet member 292 may be disposed parallel to the extension direction of the inner magnet member 250.

Although not shown, it goes without saying that the structures of FIGS. 4 and 5 may be applied to the sputtering apparatus 200 of the present embodiment.

The electrode member 270 is disposed outside the rotational target 230 so that the electrode member 270 faces the substrate S and is spaced apart from the rotational target 230. The electrode member 270 is connected to the power source 280.

The electrode member 270 includes a first electrode member 271 and a second electrode member 272. The first electrode member 271 and the second electrode member 272 are disposed on both sides of the rotation type target 230 with the rotation type target 230 as the center, respectively. Specifically, the first electrode member 271 and the second electrode member 272 are disposed closer to the rotational target 230 than the first magnet member 291 and the second magnet member 292, respectively. In addition, the first electrode member 271 and the second electrode member 272 correspond to upper surfaces of the first magnet member 291 and the second magnet member 292, respectively, and the first magnet member 291 and the second Among the side surfaces of the magnet member 292, it is formed to correspond to the side facing the rotational target 230. Through the shapes of the first electrode member 271 and the second electrode member 272, the first electrode member 271 and the second electrode member 272 are formed by the first magnet member 291 and the second magnet member 292. ) Can also perform the function of preventing damage and contamination.

In addition, the first electrode member 271 is disposed to face one side area of the rotatable target 230, and the second electrode member 272 is a first electrode member 271 among the side areas of the rotatable target 230. ) Is arranged to face the opposite area of the opposite area.

In addition, the first electrode member 271 and the second electrode member 272 may have a length equal to or greater than the length of the first magnet member 291 and the second magnet member 292. Through this, the first electrode member 271 and the second electrode member 272 can effectively protect the first magnet member 291 and the second magnet member 292. In particular, the first electrode member 271 and the second electrode member 272 can be effectively protected. The second electrode member 272 preferably has a length greater than that of the first magnet member 291 and the second magnet member 292.

The electrode member 270 has a polarity opposite to that of the backing plate 220. That is, the electrode member 270 functions as an anode.

As described above, the backing plate 220 functions as a cathode. In this case, plasma generated for a deposition process between the rotational target 230 and the substrate S may damage the substrate S. That is, negative ions and electrons generated by plasma generation collide with the substrate S. In particular, when a positive voltage is applied to the chamber 201 or the support unit 205, the number of times such anions, electrons, etc. collide with the substrate S increases, and thus the substrate S may be damaged.

However, in this embodiment, since the electrode member 270 functions as an anode, negative ions, electrons, etc. generated due to plasma generation are prevented from proceeding to the substrate S. That is, the deposition process can be performed while maintaining the substrate S in a floating state. This prevents damage to the substrate S and occurrence of arcs, and improves the efficiency of the deposition process.

In addition, through the combination of the external magnet member 290 and the electrode member 270, the density of plasma generated in the space between the rotating target 230 and the substrate S is partially increased, so that the deposition even when a low power is applied. You can proceed with the process.

The operation and effect of the sputtering apparatus 200 of this embodiment will be briefly described.

A substrate S is disposed in the chamber 201 of the sputtering apparatus 200, and a rotational target 230 capable of providing a material for forming a deposition film on the substrate S is disposed so as to face the substrate S. do. In addition, after forming a plasma state through gas injected into the chamber 201, the excited particles collide with the rotating target 230, and particles separated from the rotating target 230 reach the substrate S. A vapor deposition film is formed.

The sputtering apparatus 200 of the present embodiment includes a rotational target 230. During the deposition process, since the deposition process proceeds while the rotational target 230 rotates, the deposition process can be performed while uniformly using the entire surface of the rotational target 230. Through this, the use efficiency of the rotating target 230 is improved, the use cycle of the rotating target 230 is increased, and the deposition process through the sputtering device 200 is efficiently performed.

In addition, the internal magnet member 250 is provided inside the rotating target 230 to improve deposition efficiency for the substrate S.

In addition, in this embodiment, by arranging the external magnet members 290 on both sides of the rotating target 230 around the rotating target 230, abnormal discharge that may occur due to the internal magnet member 250 is fundamentally blocked. To increase the deposition efficiency. That is, a magnetic field is generated between the rotating target 230 and the substrate S due to the internal magnet member 250, and plasma discharge is generated in this region. However, the inner magnet member 250 generates a non-uniform magnetic field around the rotational target 230, particularly on the side surfaces. The non-uniform magnetic field generated on the side of the rotating target 230 causes abnormal plasma discharge, such as non-uniform wear of the rotating target 230, uneven thickness of the deposited film on the substrate S, and other damage to the rotating target 230. Problems arise. However, in this embodiment, the external magnet members 290 are disposed to correspond to both sides of the rotating target 230 to suppress the generation of such a non-uniform magnetic field.

Through this, an abnormal magnetic field generated on the side of the rotating target 230 is blocked, so that uniform use of the rotating target 230 and an effect of improving the properties of the deposition film are easily realized.

In addition, negative ions, electrons, etc. generated due to plasma generation are prevented from proceeding to the substrate S using the electrode member 270. That is, the deposition process can be performed while maintaining the substrate S in a floating state. This prevents damage to the substrate S and occurrence of arcs, and improves the efficiency of the deposition process.

In addition, through the combination of the external magnet member 290 and the electrode member 270, the density of plasma generated in the space between the rotating target 230 and the substrate S is partially increased, so that the deposition even when a low power is applied. You can proceed with the process.

7 is a schematic cross-sectional view of an organic light emitting display device manufactured using the sputtering device of the present invention, and FIG. 8 is an enlarged view of F of FIG. 7.

7 and 8, an organic light emitting display apparatus 10 is formed on a substrate 30. The substrate 30 may be formed of a glass material, a plastic material, or a metal material.

On the substrate 30, a buffer layer 31 containing an insulating material is formed to provide a flat surface on the upper portion of the substrate 30 and prevent moisture and foreign matter from penetrating in the direction of the substrate 30.

On the buffer layer 31, a thin film transistor 40 (TFT), a capacitor 50, and an organic light emitting device 60 are formed. The thin film transistor 40 largely includes an active layer 41, a gate electrode 42, and a source/drain electrode 43. The organic light-emitting device 60 includes a first electrode 61, a second electrode 62, and an intermediate layer 63. The capacitor 50 includes a first capacitor electrode 51 and a second capacitor electrode 52.

Specifically, an active layer 41 formed in a predetermined pattern is disposed on the upper surface of the buffer layer 31. The active layer 41 may contain an inorganic semiconductor material such as silicon, an organic semiconductor material, or an oxide semiconductor material, and may be formed by selectively implanting a p-type or n-type dopant.

A gate insulating film 32 is formed on the active layer 41. A gate electrode 42 is formed on the gate insulating layer 32 so as to correspond to the active layer 41. The first capacitor electrode 51 may be formed on the gate insulating layer 32, and may be formed of the same material as the gate electrode 42.

An interlayer insulating film 33 is formed to cover the gate electrode 42, and a source/drain electrode 43 is formed on the interlayer insulating film 33, and is formed to contact a predetermined region of the active layer 41. The second capacitor electrode 52 may be formed on the insulating layer 33, and may be formed of the same material as the source/drain electrode 43.

A passivation layer 34 is formed to cover the source/drain electrodes 43, and a separate insulating layer may be further formed on the passivation layer 34 to planarize the thin film transistor 40.

A first electrode 61 is formed on the passivation layer 34. The first electrode 61 is formed to be electrically connected to any one of the source/drain electrodes 43. Then, the pixel defining layer 35 is formed to cover the first electrode 61. After forming a predetermined opening 64 in the pixel defining film 35, an intermediate layer 63 including an organic light emitting layer is formed in a region defined by the opening 64. A second electrode 62 is formed on the intermediate layer 63.

An encapsulation layer 70 is formed on the second electrode 62. The encapsulation layer 70 may contain an organic material or an inorganic material, and may have a structure in which organic and inorganic materials are alternately stacked.

As a specific example, the encapsulation layer 70 may be formed using the sputtering devices 100 and 200 described above. That is, after the substrate 30 on which the second electrode 62 is formed is put into the chambers 101 and 201, a desired layer may be formed by using the sputtering apparatuses 100 and 200.

In particular, the encapsulation layer 70 includes an inorganic layer 71 and an organic layer 72, the inorganic layer 71 includes a plurality of layers 71a, 71b, and 71c, and the organic layer 72 includes a plurality of layers. (72a, 72b, 72c) is provided. In this case, a plurality of layers 71a, 71b, and 71c of the inorganic layer 71 may be formed by using the sputtering apparatuses 100 and 200.

However, the present invention is not limited thereto. That is, the same as the gate electrode 42, the source/drain electrode 43, the first electrode 61, the second electrode 62 of the organic light emitting display device 10 by using the sputtering devices 100 and 200 described above. It is also possible to form an electrode.

In addition, of course, other insulating films such as the buffer layer 31, the gate insulating film 32, the interlayer insulating film 33, the passivation layer 34, and the pixel defining film 35 are formed by using the above-described sputtering devices 100 and 200. It is possible.

As described above, when the sputtering devices 100 and 200 of the present embodiment are used, the characteristics of the deposition film formed on the organic light emitting display device 10 are improved, and as a result, the electrical characteristics and the image quality characteristics of the organic light emitting display device 10 are improved. I can.

The present invention has been described with reference to the embodiments shown in the drawings, but these are merely exemplary, and those of ordinary skill in the art will appreciate that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical scope of the present invention should be determined by the technical spirit of the appended claims.

S, 30: substrate
100, 200: sputtering device
101, 201: chamber
120, 220: backing plate
130, 230: rotating target
150, 250: internal magnet member
190, 290: external magnet member

Claims (20)

It relates to a sputtering apparatus for performing a deposition process on a substrate,
A chamber including a deposition space in which a substrate is disposed and a deposition process is performed on the substrate;
A rotating target disposed in the chamber to face the substrate;
An inner magnet member disposed in the rotatable target; And
And an external magnet member disposed in the chamber to face the substrate and to be spaced apart from the rotational target outside the rotational target,
The external magnet member includes a first magnet member and a second magnet member disposed on both sides around the rotational target,
The first magnet member and the second magnet member,
And a sputtering apparatus formed so as to be spaced apart from a region in which at least the inner magnet member and the substrate overlap each other among regions between the inner magnet member and the substrate. The method of claim 1,
And the first magnet member and the second magnet member are disposed to be spaced apart from each other. The method of claim 1,
The first magnet member is disposed to face one side area of the rotatable target, and the second magnet member is disposed to correspond to an opposite side area of the side area of the rotatable target. The method of claim 1,
The external magnet member is a sputtering device having a form extending elongated parallel to the longitudinal direction of the rotational target. The method of claim 1,
The outer magnet member is a sputtering device disposed to be parallel to the inner magnet member. The method of claim 1,
A sputtering device having the same distance between the external magnet member and the substrate. The method of claim 1,
The external magnet member is disposed to be inclined with respect to the substrate by a predetermined angle so that the distance between the external magnet member and the substrate gradually changes. The method of claim 1,
The external magnet member includes a plurality of divided magnet members, and each of the plurality of divided magnet members is disposed independently of each other to independently control a distance between the plurality of divided magnet members and the substrate. The method of claim 1,
The outer magnet member has a length corresponding to at least the inner magnet member sputtering device. The method of claim 1,
The rotational target is formed in the shape of a hollow pillar, and a backing plate supporting the rotational target is disposed inside the rotational target. The method of claim 1,
The rotating target is a sputtering device that functions as a cathode. The method of claim 1,
A sputtering apparatus comprising an electrode member disposed outside the rotational target to face the substrate and to be spaced apart from the rotational target. The method of claim 12,
The electrode member is a sputtering apparatus including a first electrode member and a second electrode member disposed on both sides of the rotational target. The method of claim 12,
The electrode member is a sputtering device disposed between the external magnet member and the rotatable target. The method of claim 12,
The electrode member is a sputtering device that functions as an anode. It relates to a method of forming a thin film on a substrate using a sputtering device,
Injecting the substrate into the chamber; And
Depositing a deposition material on the substrate using a rotational target disposed in the chamber to face the substrate and having an internal magnet member disposed therein,
The depositing of the deposition material on the substrate may include controlling a magnetic field around the rotational target using an external magnet member facing the substrate and disposed outside the rotational target so as to be spaced apart from the rotational target. Including,
The external magnet member includes a first magnet member and a second magnet member disposed on both sides around the rotational target,
The first magnet member and the second magnet member,
And a thin film forming method comprising at least one of the regions between the inner magnet member and the substrate formed so as to be spaced apart from a region where the inner magnet member and the substrate overlap each other. The method of claim 16,
Arranging an electrode member disposed outside the rotational target to face the substrate and spaced apart from the rotational target,
The method of forming a thin film further comprising applying a voltage to the electrode member in the step of depositing the deposition material on the substrate. It relates to a method of forming an organic light emitting display device using a sputtering device,
Injecting a substrate into the chamber; And
Depositing a deposition material on the substrate using a rotational target disposed in the chamber to face the substrate and having an internal magnet member disposed therein,
The depositing of the deposition material on the substrate may include controlling a magnetic field around the rotational target using an external magnet member facing the substrate and disposed outside the rotational target so as to be spaced apart from the rotational target. Including,
The external magnet member includes a first magnet member and a second magnet member disposed on both sides around the rotational target,
The first magnet member and the second magnet member,
A method of manufacturing an organic light-emitting display device comprising: at least one of the regions between the internal magnet member and the substrate, formed to be spaced apart from a region where the internal magnet member and the substrate overlap each other. The method of claim 18,
The organic light emitting display device,
A first electrode, a second electrode, an intermediate layer disposed between the first electrode and the second electrode and including an organic emission layer, and an encapsulation layer formed on the second electrode,
The method of manufacturing an organic light emitting display device, comprising depositing the deposition material on the substrate to form the encapsulation layer. The method of claim 19,
The encapsulation layer includes at least one organic layer and at least one inorganic layer,
And forming at least one of the inorganic layers of the encapsulation layer by performing the step of depositing the deposition material on the substrate.

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