KR20150002198A - Pulling speed control system of growing apparatus for silicon single crystal and manufacturing method for the same - Google Patents

Abstract

The present invention relates to apparatus for growing single crystal silicon. The apparatus for growing single crystal silicon, wherein silicon (S) is melted by a crucible and a heater arranged in the interior of a growth chamber, and ingot which will be grown is inserted into the growth chamber through an exit and touched the melted silicon so as to grow into single crystal ingot, comprises a pulling speed detection part detecting an average pulling speed at a first section in a soldering process by which the ingot touched melted silicon expands by a certain diameter; a storage part storing the average pulling speed at the first section detected by the pulling speed detection part; single crystal silicon; a pulling speed calculation part calculating the pulling speed at a second section in the soldering process based on the average pulling speed at the first section stored in the storage part; and a control part controlling the growth of the ingot using the pulling speed at the second section calculated at the second section in the soldering process. According to the present invention, a process of correction depending on the pulling speed for each section when going on to a body process from the soldering process in the growth of the single crystal silicon ingot, which is used to be conducted directly by a worker, is controlled by detecting the pulling speed automatically, thereby reducing the deviation for work and improving the productivity.

Description

[0001] The present invention relates to a pulling speed control system for a silicon single crystal growth apparatus,

The present invention relates to a pulling rate control system and method for a silicon single crystal growth apparatus, and more particularly, to a pulling rate control system for a silicon single crystal growth apparatus, The present invention relates to a system and a method for controlling a pulling speed of a silicon single crystal growing apparatus capable of reducing variation in work and improving productivity by automatically detecting a pulling rate.

A silicon wafer widely used as a material for manufacturing semiconductor devices can be produced by cutting a single crystal silicon ingot grown from a silicon melt in a molten state into a single crystal silicon thin plate into a wafer shape.

This single crystal silicon ingot is grown and manufactured according to the Czochralski method. The single crystal ingot growing step for growing a single crystal ingot by the Czochralski method is roughly as follows. The polycrystalline silicon ingot charged as a raw material in the crucible is heated and melted by a heater provided so as to surround the crucible. When the raw material melt is formed in the crucible, the seed crystal (seed) supported on the crucible is lowered while rotating the crucible in a predetermined direction to immerse the raw material melt in the crucible. Then, the seed is rotated while being rotated in a predetermined direction to raise the circumferential silicon single crystal to the lower side of the seed, thereby growing a single crystal silicon ingot.

On the other hand, a general ingot growth process includes a vacuum stage for sucking contaminants in the growth chamber, a dissolution step for dissolving the silicon ingot in a silicon melt, a stabilization step for stabilizing the molten silicon melt, A necking step in which the seed is immersed in a silicon melt and then lifted up while minimizing the diameter, a shouldering step of expanding to a desired diameter, a body step of growing the desired length, a step of growing the grown ingot from the silicon melt And a cooling step for cooling the grown ingot.

In the course of moving from the shoulder step to the body step, the operator manually controls the pulling speed according to the diameter of the ingot grown.

As a result, there arises a problem that deviation occurs in operation and productivity is deteriorated.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made to solve the above problems occurring in the prior art, and an object of the present invention is to provide a method of manufacturing a silicon single crystal ingot by automatically detecting a pulling rate and controlling the process of manually performing a correction operation according to a pull- And to provide a silicon single crystal growing apparatus and method capable of reducing variations in work and improving productivity.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not restrictive of the invention, unless further departing from the spirit and scope of the invention as defined by the appended claims. It will be possible.

According to an aspect of the present invention, there is provided a silicon single crystal growth apparatus comprising: a silicon melt (S) dissolved by a crucible and a heater provided inside a growth chamber; an ingot to be grown through an entrance is inserted into a growth chamber 1. A silicon single crystal growth apparatus in contact with a silicon melt and growing into a single crystal ingot, comprising: a pulling rate detecting unit for detecting an average pulling rate of the first section in a shoulder process in which the ingot contacted with the silicon melt is expanded to a predetermined diameter; A storage unit for storing an average lifting speed of the first section detected by the lifting speed detector; A pull-up speed calculating unit for calculating a pull-up speed of a second section of the shoulder process based on an average pull-up speed value of the first section stored in the storage unit; And a controller for controlling the growth of the ingot at the pulling rate of the calculated second section in the second section of the shouldering process.

In particular, the pulling rate of the second section in the pulling rate calculator,

Y = AX + B (where A is a constant, B is a n-step constant, and X is an average pulling rate of the first section).

In particular, the control unit is characterized in that the diaphragm PID control of the body section is performed when the target diaphragm size is increased up to the third section of the body process using the calculated pull-up speed of the second section.

Here, in particular, the first section of the shouldering process corresponds to the intermediate stage section of the shouldering process, and the second section corresponds to the latter stage section of the shouldering process.

Particularly, the third section of the body process is characterized in that it corresponds to an initial stage section of the body process.

According to another aspect of the present invention, there is provided a method of growing a silicon single crystal in which a silicon melt (S) is dissolved by a crucible and a heater provided in a growth chamber, and an ingot to be grown through an entrance is inserted into a growth chamber And contacting the silicon melt to grow a single crystal ingot, the method comprising: detecting an average pulling speed of the first section in a shoulder process in which the ingot contacted with the silicon melt is expanded to a predetermined diameter; Storing the detected average lifting speed of the first section; Calculating a lifting speed of a second section of the shoulder process based on the stored average lifting speed value of the first section and proceeding to the second section of the shouldering process at the calculated lifting speed; Comparing a calculated condition of the body section with a predetermined condition of a body process after entering the third section of the body process at the calculated pulling rate of the second section; And comparing the predetermined condition of the body process and proceeding to the diamond PID control of the body process if the predetermined condition corresponding thereto is satisfied.

Herein, the third section is progressed so as to grow to the target value diamond of the body process, if the predetermined condition of the body process is not satisfied.

Here, in particular, in the step of calculating the pulling rate of the second section

Y = AX + B (where A is a constant, B is a n-step constant, and X is an average pulling rate of the first section).

Here, in particular, the first section of the shouldering process corresponds to the intermediate stage section of the shouldering process, and the second section corresponds to the latter stage section of the shouldering process.

Particularly, the third section of the body process is characterized in that it corresponds to an initial stage section of the body process.

According to the present invention, in the process of growing a silicon single crystal ingot, a process in which a worker directly manages a correction operation according to a pull-up speed for each section during the progress of a body process in a shoulder ring process is automatically detected and controlled, And the productivity can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a configuration of a pulling rate control system of a silicon single crystal growing apparatus according to an embodiment of the present invention; FIG.
2 is a flow diagram of a method for controlling the pull rate of silicon single crystal growth according to an embodiment of the present invention.
3 is a view showing a pulling speed for a process proceeding from a shoulder ring process to a body process of the present invention;

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the detailed description of known functions and configurations incorporated herein will be omitted when it may unnecessarily obscure the subject matter of the present invention.

The same reference numerals are used for portions having similar functions and functions throughout the drawings.

In addition, in the entire specification, when a part is referred to as being 'connected' to another part, it may be referred to as 'indirectly connected' not only with 'directly connected' . Also, to include an element does not exclude other elements unless specifically stated otherwise, but may also include other elements.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view schematically showing a configuration of a pulling rate control system of a silicon single crystal growing apparatus according to an embodiment of the present invention.

As shown in FIG. 1, the pulling rate control system of the silicon single crystal growth apparatus of the present invention is composed of a silicon single crystal growth apparatus 1 and a pulling rate control system 100. The silicon single crystal growth apparatus 1 includes a growth chamber 10, a crucible 20, a heater 30, and a magnetic body (not shown).

The growth chamber 10 is formed in a cylindrical shape having an entrance 11 through which the ingot I enters and exits, and a growth environment for growing the ingot I is formed therein. At this time, the growth environment formed in the growth chamber 10 depends on the temperature, pressure, and flow rate of the purge gas supplied into the growth chamber 10, and the like in the growth chamber 10.

The ingot I entered into the growth chamber 10 through the entrance 11 of the growth chamber 10 is a seed of the undeveloped ingot I and the seed is introduced into the growth chamber 10, Crystal ingot I and is discharged to the outside of the growth chamber 10 through the entrance.

The crucible 20 is installed inside the growth chamber 10, and the silicon melt S is accommodated. At this time, the silicon melt (S) of the crucible (20) is formed by dissolving a polycrystalline silicon ingot. The formation of the silicon melt (S) is described later with the heater (30) to be described later.

The crucible 20 is supported by a crucible support 21 whose outer peripheral surface is made of graphite. Further, a shaft 22 is formed below the crucible supporter 21 to rotate the supporting crucible 20 at a predetermined speed. By the rotation of the crucible 20, the silicon melt S accommodated in the crucible 20 can maintain a uniform density and temperature.

The heater 30 is installed in the growth chamber 10 so as to be spaced apart from the outer circumferential surface of the crucible 20 by a predetermined distance to heat the crucible 20. Like the crucible supporter 21, the heater 30 is preferably formed of graphite which is excellent in thermal conductivity and heat resistance, has a low coefficient of thermal expansion, is not easily deformed by heat, and is resistant to thermal shock. The crucible support 21 of the graphite material and the heater 30 make the furnace 20 more heat-resistant.

On the other hand, when the crucible 20 is heated by the heater 30, the polycrystalline silicon ingot contained in the crucible 20 is dissolved by the high temperature to be deformed into the silicon melt S. In addition, the heater 30 continuously heats the melted silicon melt S during the growth of the ingot I, thereby creating a high-temperature environment in which the ingot I can be grown.

On the other hand, a heat dissipator 31 is provided to prevent heat loss from leaking heat of the silicon melt S heated by the heat generated from the heater 30. The heat discharging body 31 has one end facing the upper surface of the silicon melt S and the other end extending from the one end to between the ingot I and the growth chamber 10.

The silicon melt S is dissolved by the crucible 20 and the heater 30 provided in the growth chamber of the silicon single crystal growth apparatus 1 and the ingot to be grown through the entrance is inserted into the growth chamber, In the process of growing into a single crystal ingot in contact with the melt, the pulling rate control system 100 controls the pulling speed at the shouldering step and the body step.

The pulling rate control system (100) includes a pulling rate detecting unit (101) for detecting an average pulling rate of a first section in a shoulder process in which an ingot contacted with the silicon melt is expanded to a predetermined diameter; A storage unit (102) for storing an average lifting speed of the first section detected by the lifting speed detector (101); A pulling rate calculation unit (103) for calculating a pulling rate of a second section of the shoulder process based on an average pulling rate value of the first section stored in the storage unit (102); And a controller (104) for controlling the growth of the ingot at the pulling rate of the calculated second section in the second section of the shoulder ring process.

The pulling rate detecting unit 101 detects the diameter of the ingot grown in the shouldering step. At this time, a digital camera (not shown) such as a CCD camera or the like is used to acquire a digital image, A method of calculating an average pulling speed according to a diameter size of the roller can be applied.

More specifically, the calculated average pulling speed may be an average pulling speed for the middle section in the first section during the shouldering step.

The pulling rate calculator 103 calculates the pulling rate for the second half of the shoulder step and the first half of the body step using the average pulling rate detected by the pulling rate detector 101. [ Here, the first section of the shoulder process corresponds to the intermediate stage section of the shouldering process, and the second section corresponds to the latter stage section of the shouldering process.

More specifically, the pulling rate of the second section in the pulling rate calculator 103 is

Y = AX + B

(Where A is a constant, B is a constant for each step divided by n, and X is an average pulling rate of the first section).

The control unit 104 also controls the pulling rate calculated so that the ingot of the latter stage of the shouldering step grows to a predetermined diameter by using the calculated pulling rate of the second section. The lifting speed of the third section of the body process is controlled using the lifting speed of the calculated second section. That is, the PID is controlled according to the size of the die according to the time after the third section of the body process according to the condition of the ingot (the amount of change of diamond / hour) after the entry into the body step. For example, when the diameter of the ingot grown at the calculated pulling rate is proceeding at a constant speed, the body process proceeds normally. However, if it is determined that the grown ingot is an over-shouldering process, Thereby controlling the body process. Here, the third section of the body process corresponds to the initial stage section of the body process.

In this process, the growth rate of the growth of the single crystal ingot with respect to its size and length is controlled to automatically proceed to the section of the shoulder process that proceeds to the body process.

FIG. 2 is a flow chart of a pulling rate control method of silicon single crystal growth according to an embodiment of the present invention, and FIG. 3 is a view showing a pulling speed for a process in a body process in the shouldering process of the present invention to be.

As shown in FIG. 2, in the method of growing a silicon single crystal according to the present invention, a crucible 20 provided in the growth chamber 10 is first heated by a heater 30 to form a silicon solution S. At this time, the silicon solution (S) is formed by melting the polycrystalline silicon agglomerate by heating, and is continuously heated by the heater (30). When the silicon solution S is prepared by dissolution, the ingot I to be grown through the entrance 11 is inserted into the growth chamber 10 and brought into contact with the silicon solution S. Thereafter, the ingot (I) brought into contact with the silicon solution (S) is pulled up and grown as a single crystal ingot (I). The growth step S30 of the ingot I proceeds while being applied with a magnetic field by the magnetic body 40, and includes a shouldering process step and a body process step.

Hereinafter, the pulling rate control method for the process of the shoulder ring process and the body process step of the silicon single crystal growth method will be described.

First, a step of detecting an average lifting speed of the first section in a shoulder process in which the ingot contacted with the silicon melt is expanded to a predetermined diameter is performed (S21). Here, the first section of the shouldering process may correspond to the intermediate stage section of the shouldering process.

More specifically, by a shoulder process in which the diameter of the ingot (I) is expanded to a desired diameter, the diameter of the ingot (I) gradually increases in the diameter direction of the ingot (I) The growth value is referred to as? D and the value is measured. Here, the shouldering process is divided into several steps, and the pulling speed of the shouldering process is detected according to the radial growth value (? D) of each step.

Then, the step of storing the detected average lifting speed of the first section is performed (S22).

Next, the step of calculating the pulling speed of the second section of the shoulder process based on the average pulling-up speed value of the stored first section (S23) and proceeding to the second pulling process of the shouldering process at the calculated pulling- (S24).

More specifically, the step S23 of calculating the pulling-up speed of the second section is calculated by the following equation. Here, the second section corresponds to the second stage section of the shouldering process.

Equation

Y = AX + B where A is a constant, B is a n-step constant, and X is an average increase rate of the first section.

Here, the shouldering process is divided into several steps to detect the pulling speed for the radial growth value (D) at each step.

As shown in FIG. 3, it can be seen that the pulling speed of the shouldering process step progresses rapidly in the middle section, whereas it progresses slowly in the latter section. It can be seen that the pulling speed to the body process step is similar to the pulling speed of the latter half of the shoulder ring.

Then, the second stage of the shoulder ring is advanced at the calculated pulling rate (S24).

The third section, which is the entry step of the body process, proceeds at the calculated pulling rate of the second section. When the predetermined condition (S26) is satisfied, the diamond PID control of the body process is performed (S27). Here, the third section of the body process corresponds to the initial stage section of the body process.

More specifically, the pulling rate of the third section of the body process is controlled according to the condition that the ingot grows to a predetermined diameter using the calculated pulling rate of the second section. That is, it is controlled according to the conditions of the ingot (the amount of diamond change / hour) after the entry into the body stage. Here, when the diameter of the ingot grown by the calculated pulling rate is progressing at a constant speed, the body process proceeds normally.

On the other hand, if the predetermined condition (S26) of the body process is not satisfied, if the grown ingot of the body process is determined to be an over-shouldering process, the body process is controlled at a corresponding pulling rate. Here, the third section of the body process corresponds to the initial stage section of the body process.

Therefore, in the growth of a silicon single crystal ingot, the pulling speed of the shouldering process is calculated at the time of the body process in the shouldering process, and the pulling rate is automatically controlled accordingly, And productivity can be improved.

While the present invention has been particularly shown and described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of course, this is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the equivalents as well as the claims that follow.

Description of the Related Art
1 --- Silicon single crystal growth apparatus 10 --- Growth chamber
20 --- Crucible 30 --- Heater
100 --- Pulling speed control system 101 --- Pulling speed detector
102 --- Storage unit 103 --- Pulling speed operation unit
104 --- Control unit

Claims (10)

In a silicon single crystal growing apparatus in which a silicon melt (S) is dissolved by a crucible and a heater provided in a growth chamber, an ingot to be grown through an entrance is inserted into a growth chamber and is contacted with the silicon melt to grow into a single crystal ingot ,
A pulling speed detector for detecting an average pulling speed of the first section in a shoulder process in which the ingot contacted with the silicon melt is expanded to a predetermined diameter;
A storage unit for storing an average lifting speed of the first section detected by the lifting speed detector;
A pull-up speed calculating unit for calculating a pull-up speed of a second section of the shoulder process based on an average pull-up speed value of the first section stored in the storage unit; And
And controlling the growth of the ingot at the pulling rate of the calculated second section in the second section of the shouldering process.
The method according to claim 1,
The pulling rate of the second section in the pulling rate calculation section is
Y = AX + B
Here, A is a constant, B is a n step constant, X is an average pulling rate
Of the silicon single crystal growing apparatus according to the present invention.
The method according to claim 1,
Wherein the control unit advances the diaphragm PID control of the body interval when the target diaphragm size is increased up to the third section of the body process using the calculated pulling rate of the second section. system.
The method according to claim 1,
Wherein the first section of the shouldering process corresponds to the intermediate stage section of the shouldering process and the second section corresponds to the second stage section of the shouldering process.
The method of claim 3,
And the third section of the body process corresponds to an initial stage section of the body process.
A silicon single crystal growth method in which a silicon melt (S) is dissolved by a crucible and a heater provided in a growth chamber, an ingot to be grown through an entrance is inserted into a growth chamber and is contacted with the silicon melt to grow into a single crystal ingot ,
Detecting an average pulling speed of the first section in a shoulder process in which the ingot contacted with the silicon melt is expanded to a predetermined diameter;
Storing the detected average lifting speed of the first section;
Calculating a lifting speed of a second section of the shoulder process based on the stored average lifting speed value of the first section and proceeding to the second section of the shouldering process at the calculated lifting speed;
Comparing a calculated condition of the body section with a predetermined condition of a body process after entering the third section of the body process at the calculated pulling rate of the second section; And
Comparing the predetermined condition of the body process and proceeding to the diamond PID control of the body process if the predetermined condition corresponding to the predetermined condition is satisfied. The method according to claim 6,
And if the predetermined condition of the body process is not satisfied, proceeding to a third section to grow to a target diamond of the body process.
The method according to claim 6,
The pulling rate of the second section is calculated in the calculating step
Y = AX + B
Here, A is a constant, B is a n step constant, X is an average pulling rate
Of the silicon single crystal growth.
The method according to claim 6,
Wherein the first section of the shouldering process corresponds to the intermediate stage section of the shouldering process and the second section corresponds to the latter stage section of the shouldering process.
8. The method of claim 7,
Wherein the third section of the body process corresponds to an initial stage section of the body process.

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