KR20140141966A - Light emitting device package and lighting apparatus using the same - Google Patents
Light emitting device package and lighting apparatus using the same Download PDFInfo
- Publication number
- KR20140141966A KR20140141966A KR20130063393A KR20130063393A KR20140141966A KR 20140141966 A KR20140141966 A KR 20140141966A KR 20130063393 A KR20130063393 A KR 20130063393A KR 20130063393 A KR20130063393 A KR 20130063393A KR 20140141966 A KR20140141966 A KR 20140141966A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting device
- light
- device package
- lens
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 claims description 45
- 239000000463 material Substances 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000009877 rendering Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000003578 releasing effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
The present invention relates to a light emitting device, and more particularly, to a light emitting device package capable of improving the quality of light and a lighting device using the same.
Recently, research has been conducted on a light source, a light emitting method, a driving method, and the like for a lighting device. Recently, a light emitting device having advantages such as efficiency, color diversity, and design autonomy has been attracting attention as an illumination light source.
In particular, a light emitting diode (LED) generates light by exciting electrons across a band gap between a conduction band and a valence band of a semiconductor active (light emitting) layer. The electron transition generates light with a wavelength corresponding to the bandgap. Therefore, the color (wavelength) of the light emitted by the light emitting diode depends on the semiconductor material of the active layer of the light emitting diode.
On the other hand, color reproduction is generally measured using a color rendering index (CRI Ra). CRI Ra is a modified average value of the relative measure of the color rendering of the illumination system compared to the color rendition of the reference radiator when illuminating with eight reference colors. That is, it is a relative measure of the shift in the surface color of the object when illuminated by a particular lamp.
Since light perceived as white is basically a mixture of two or more colors (or wavelengths), a single light emitting diode junction that generates white light has not been developed.
For example, the white light emitting diode package includes light emitting diode pixels / clusters formed of red, green, and blue light emitting diodes, respectively, to generate light perceived as white light when red light, green light, and blue light are mixed .
As another example, the white light emitting diode package includes a light emitting diode that generates blue light, and a light emitting material, for example, a phosphor that is excited by the light emitted by the light emitting diode to emit yellow light, And generates light perceived as white light when light is mixed.
In implementing such white light, research is needed to improve color quality such as color rendering. In addition, it is necessary to consider an optimal light distribution for light extraction.
SUMMARY OF THE INVENTION The present invention provides a light emitting device package capable of improving light uniformity and light conversion efficiency, and a lighting apparatus using the same.
Another object of the present invention is to provide a light emitting device package capable of improving light output and a lighting device using the same.
According to an aspect of the present invention, there is provided a light emitting device package comprising: a first light emitting device that emits light in a first wavelength band and a second light emitting device that emits light in a second wavelength band; A light emitting element including a light emitting element; A lens positioned on the light emitting element; A wavelength conversion layer disposed on the lens; And a first reflective layer spaced apart from the outside of the wavelength conversion layer.
Here, the lens may have a shape in which the vertical section has a parabola or an ellipse, or a shape in which the area gets wider as the distance from the light emitting element increases.
Further, the lens may have a light distribution distribution in which the emitted light of the light emitting element has a larger directivity angle than that of the lambda cyan light.
Here, it may further include a second reflective layer positioned in contact with the wavelength conversion layer.
The second reflective layer may be positioned parallel to the surface of the package body where the light emitting device is located.
Here, the wavelength conversion layer may have a constant thickness on the lens.
Meanwhile, the first light emitting device and the second light emitting device may include a plurality of light emitting devices emitting light of substantially the same wavelength band, respectively.
At this time, the first light emitting element may be positioned symmetrically with respect to the second light emitting element.
The second light emitting element may be located at a center side of the package body, and the first light emitting element may be located on both sides of the second light emitting element.
The first wavelength band may be a blue band, and the second wavelength band may be a red band.
At this time, the main wavelength of the first wavelength band is 450 nm, the main wavelength of the second wavelength band is 615 nm, and the wavelength of the main output of the wavelength conversion layer may be 555 nm.
A lighting apparatus including such a light emitting device package can be provided.
The present invention has the following effects.
First, the wavelength conversion layer for converting the wavelength of light of the light emitting element is not in contact with the light emitting element, but is located at least apart from the light emitting element by the thickness of the lens. The light efficiency of the phosphor used in the wavelength conversion layer is reduced by heat. Since the phosphor is located away from the light emitting element that is a heat source, it is possible to mitigate the reduction in efficiency due to heat.
Further, the area of the wavelength conversion layer is high enough to cover all of the light flux of the light emitting element, so that high efficiency of light conversion and optical output can be obtained.
Therefore, the light emitted from the first light emitting element and the light emitted from the second light emitting element pass through the wavelength conversion layer, and the light and the light converted by the wavelength conversion layer are uniformly mixed with each other, Light can be obtained.
The light thus produced can have a light distribution having a larger directivity angle than the Lambertian distribution. Such light can be emitted upward from the reflection surface of the first reflection layer.
As described above, the light distribution having a wider distribution than the Lambertian distribution is more efficient in designing the first reflection layer so as to be effectively emitted through the first reflection layer.
Furthermore, the second reflection layer provided on the lens or the wavelength conversion layer can realize such a wide distribution of light distribution, and can realize an effective light distribution by adjusting the light path.
The technical effects of the present invention are not limited to those mentioned above, and other technical effects not mentioned can be clearly understood by those skilled in the art from the following description.
1 is a schematic plan view showing an example of a light emitting device package.
2 is a sectional view taken along line A-A in Fig.
3 is a perspective view showing an example of a light emitting device package.
4 is a graph showing an example of the light distribution of the light emitting device package.
5 is a schematic view showing the relative positions of the light emitting device package and the first reflective layer.
6 is a cross-sectional view showing another example of the light emitting device package.
7 is a perspective view showing another example of the light emitting device package.
8 is a graph showing a light distribution of another example of the light emitting device package.
9 is a cross-sectional view showing another example of the light emitting device package.
10 is a graph showing a light distribution of another example of the light emitting device package.
11 is a perspective view showing an example of a lighting apparatus using a light emitting device package.
12 is an exploded perspective view showing an example of a lighting apparatus using a light emitting device package.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. Rather, the intention is not to limit the invention to the particular forms disclosed, but rather, the invention includes all modifications, equivalents and substitutions that are consistent with the spirit of the invention as defined by the claims.
It will be appreciated that when an element such as a layer, region or substrate is referred to as being present on another element "on," it may be directly on the other element or there may be an intermediate element in between .
Although the terms first, second, etc. may be used to describe various elements, components, regions, layers and / or regions, such elements, components, regions, layers and / And should not be limited by these terms.
1 is a schematic plan view showing an example of a light
1 and 2, the light
The
Particularly, when it is made of a material such as a semiconductor and a metal, the heat releasing property can be more excellent. That is, heat emitted from the
The
The
The
The
The
Here, the first and second
A
The
As shown in the figure, the
The
As shown in Fig. 2,
A
The
At this time, the thickness of the
The
Such a phosphor may be a silicate-based fluorescent material, a sulfide-based fluorescent material, a nitride-based fluorescent material, or a mixture thereof. However, the present invention is not limited to this, and any material that emits light by being excited by the
The
Further, the area of the
The light emitted from the first and second
Further, the light efficiency of the phosphor is reduced by heat, and since the phosphor is located apart from the
Meanwhile, the first wavelength band, which is the wavelength of the light emitted from the first
The light emitting layer that emits blue light may be a gallium nitride (GaN) -based material. The light emitting layer for emitting light in the red band may be GaP: ZnO, GaAsP-based or GaAlAs-based material.
At this time, the
On the other hand, the second
Compared with the red phosphor spectrum, the spectrum of the red light emitting device has a narrow half width, so that a long wavelength region which does not contribute greatly to the light output is small, so that high color rendering and high efficiency light output can be obtained.
As described above, the first and second
For example, the first and second
1, the second
That is, the first
On the other hand, the wavelength of the main output of the
The light emitted from the first
On the other hand, the light emitted from the second
At this time, the blue light may have a margin of ± 20 nm at 450 nm, and the red light may have a margin of ± 30 nm at 615 nm (± 15 nm).
When the light emitting
The first
At this time, the color light emitted from the light emitting
Fig. 3 shows a perspective view of the light emitting device package, and Fig. 4 shows the light distribution distribution of the light emitting device package.
As shown in the figure, the first
The output light of the
That is, as described above, a part of the blue light of the first
Since the first
The red light of the second
The blue light, the converted yellow light, and the red light are uniformly mixed with each other to produce high quality white light. At this time, the red light can significantly improve the color rendering property of the white light.
The white light thus produced can have a light distribution distribution in the same state as shown in FIG. That is, the light distribution by the light emitting
5, the light emitted from the light emitting
That is, since the first
The
When the light distribution of the light emitting
Accordingly, the luminous intensity distribution having a wider distribution than the Lambertian distribution is more efficient in designing the first
This is because the first
Therefore, such an effective light distribution can be realized by using the
FIG. 6 is a cross-sectional view showing another example of the light emitting device package, and FIG. 7 is a perspective view showing another example of the light emitting device package.
In order to realize the wide light distribution described above, as shown in FIG. 6, a
The
The second
The second
Particularly, light concentrated on the central side of the
At this time, the
Fig. 8 is a schematic view showing the light distribution of such a light emitting device package, and it can be seen that it has a broader light distribution distribution than the case of Fig. 4 of the above-described example.
Accordingly, a desired light distribution can be realized by adjusting the optical path of the light reflected through the light emitting
The parts not described in the above can be applied equally to those described with reference to Figs. 1 to 5 above.
9 is a cross-sectional view showing another example of the light emitting device package.
In order to realize the above-described wide distribution of light distribution, as shown in Fig. 9, a
That is, it is possible to use a
At this time, the
The
The second
At this time, the second
That is, the width of the second
10, the light distribution distribution of the light emitting
The parts not described above can be equally applied to those described with reference to Figs. 1 to 8 above.
On the other hand, a lighting device can be manufactured using the light emitting
Hereinafter, a lighting apparatus using the light emitting
Fig. 11 is a perspective view showing an example of a lighting device, and Fig. 12 is an exploded perspective view showing an example of a lighting device.
11 and 12, the lighting apparatus includes a
The
The
The
The
The heat generated in the
The
The
The
The light emitting
On the other hand, the
The fastening means may be a screw and the
On the other hand, the lighting device may further include a heat
The
(Not shown) is disposed in the
The circuit unit may include a driving circuit including a control unit capable of varying a current applied to each of the light emitting diodes. For example, this current variable can be performed by PWM control.
Meanwhile, the insulating portion filled in the space between the circuit portion and the case may be formed of silicon.
The
In addition, the
The
It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.
110: package body 101: first region
102: second region 120: light emitting element
121, 122: first light emitting element 123: second light emitting element
130: Lens 140: Wavelength conversion layer
10: heat sink 11: outer housing
12: inner housing 20: lens unit
30: light emitting unit 31: substrate
40: heat conduction pad 50: case
60: power socket 100: light emitting device package
Claims (12)
A light emitting element disposed on the package body and including a first light emitting element for emitting light in a first wavelength band and a second light emitting element for emitting light in a second wavelength band;
A lens positioned on the light emitting element;
A wavelength conversion layer disposed on the lens; And
And a first reflective layer spaced apart from the outside of the wavelength conversion layer.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20130063393A KR20140141966A (en) | 2013-06-03 | 2013-06-03 | Light emitting device package and lighting apparatus using the same |
US14/019,586 US9605810B2 (en) | 2013-06-03 | 2013-09-06 | Light emitting device package and lighting apparatus using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20130063393A KR20140141966A (en) | 2013-06-03 | 2013-06-03 | Light emitting device package and lighting apparatus using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20140141966A true KR20140141966A (en) | 2014-12-11 |
Family
ID=52459703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20130063393A KR20140141966A (en) | 2013-06-03 | 2013-06-03 | Light emitting device package and lighting apparatus using the same |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20140141966A (en) |
-
2013
- 2013-06-03 KR KR20130063393A patent/KR20140141966A/en not_active Application Discontinuation
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