WO2010123052A1 - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
WO2010123052A1
WO2010123052A1 PCT/JP2010/057120 JP2010057120W WO2010123052A1 WO 2010123052 A1 WO2010123052 A1 WO 2010123052A1 JP 2010057120 W JP2010057120 W JP 2010057120W WO 2010123052 A1 WO2010123052 A1 WO 2010123052A1
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WO
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Application
Patent type
Prior art keywords
light
member
phosphor
recess
led element
Prior art date
Application number
PCT/JP2010/057120
Other languages
French (fr)
Japanese (ja)
Inventor
米田 賢治
Original Assignee
シーシーエス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/644Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body

Abstract

Disclosed is an LED light-emitting device wherein the heat of a wavelength conversion member that contains a phosphor can be efficiently dissipated. The LED light-emitting device comprises: a base that is provided with a recess having an opening in the upper surface; an LED element that is mounted on the bottom surface of the recess; a light-transmitting member that seals the LED element; a wavelength conversion member that contains a phosphor and is arranged on the light-transmitting member; and a light-transmitting heat dissipation member that is arranged on the wavelength conversion member and covers the opening of the recess.

Description

The light-emitting device

The present invention, a light emitted from the LED element, to an LED device which emits the wavelength-converted by the phosphor layer.

Conventionally, by combining the LED elements and the various phosphors that emit blue light or ultraviolet light using a gallium nitride-based compound semiconductor light-emitting emitting light of a different color from the emission color of the LED elements, including white devices have been developed (Patent Document 1). Such light-emitting device using an LED element is small, power-saving, has advantages such as long life, are widely used as display light source and illumination light source. Particularly high output in recent years, have been developed high brightness of the LED element, its use is increasingly increased steadily.

Meanwhile, LED elements by higher output, greatly increasing the amount of heat generated LED element, a problem that the LED element itself is deteriorated is caused by the heat. Further, since the phosphor is also vulnerable to heat, it is said in general the phosphor is thermally degraded by heat transfer from the LED element.

Therefore, conventionally, under the LED element in laying the heat radiation plate, and from here so as to dissipate heat.

JP-A-7-99345

However, in practice, the phosphor is present inventors the fact that promotes the deterioration of its produce heat was first discovered by extensive studies. An LED element mounted on a heat dissipating substrate, overlies the transparent resin layer further covering thereon with a phosphor layer, the applied voltage 3.5 V, was experimenting with the conditions of the current 300 mA, top-emitting layer of the LED element portion 85 ° C., despite temperature so say 55 ° C. at the top surface of the transparent resin layer is lowered, the upper surface temperature of the phosphor layer has a 65 ° C., conventional phosphor which has been neglected it was confirmed heat generation is remarkable.

The present invention has been made in view of such problems, conventionally, there is the first time was made by paying attention to the point that heat generated in the phosphor which has been neglected, the heat of the wavelength conversion member containing a phosphor the is obtained as its principal intended object to provide a LED light-emitting device can be efficiently released.

That light emitting device according to the present invention, containing: a base having a recess that opens to the upper end surface, and an LED element mounted on a bottom surface of the recess, and the translucent member for sealing the LED element, a phosphor and a wavelength conversion member placed on the light transmissive member, that is provided with a, and the light-transmitting heat radiating member covering the opening of the recess is placed on the wavelength converting member and features.

In accordance with this arrangement, by the translucent heat radiating member are closely to each other is placed on the wavelength conversion member, it is possible to efficiently release the heat of the wavelength conversion member , decrease in luminous efficiency and luminance of the phosphor contained in the wavelength conversion member, the thermal deterioration can be effectively prevented.

In order to suppress the temporal change emission color of the light-emitting device according to the present invention, the wavelength conversion member, it is preferable that the fluorescent region to emit light of different colors, which are juxtaposed.

If the light emitting device according to the present invention is one that emits white light, fluorescence in order to suppress the color unevenness, the LED element is one which emits near-ultraviolet light, the phosphor which emits red light body (hereinafter. referred to red phosphor), a phosphor emitting green light (hereinafter. referred to green phosphor) and a phosphor that emits blue light (hereinafter, referred to as blue phosphors.) it is preferably.

In the light emitting device according to the present invention, the the translucent radiating member and the wavelength converting member may be positioned in the vertical direction or the opposite, the light emitting device such embodiments also constitutes the present invention . In other words, the light-emitting device according to the present invention such embodiments includes a base having a recess that opens to the upper end surface, and an LED element mounted on a bottom surface of the recess, light-transmissive member for sealing the LED element When the a placed thereon translucent radiating member on the transparent member, the placed on the transparent heat radiating member covering the opening of the recess, the wavelength converting member containing a phosphor characterized in that it comprises, when.

According to the present invention having such a configuration, it is possible to satisfactorily suppress a change of the phosphor due to heat.

It is a schematic longitudinal sectional view of a light emitting device according to an embodiment of the present invention. It is a schematic longitudinal sectional view of a light emitting device according to another embodiment. It is a schematic exploded perspective view of a light emitting device according to the embodiment. It is a schematic plan view of a wavelength conversion member in the other embodiments. It is a schematic longitudinal sectional view of a light emitting device according to another embodiment. It is a schematic longitudinal sectional view of a light emitting device according to another embodiment. It is a schematic longitudinal sectional view of a light emitting device according to another embodiment. It is a schematic longitudinal sectional view of a light emitting device according to another embodiment. It is a schematic longitudinal sectional view of a light emitting device according to another embodiment. It is a schematic longitudinal sectional view of a light emitting device according to another embodiment.

Will be described with reference to the accompanying drawings, an embodiment of the present invention are described below.

The light emitting device 1 according to this embodiment, as shown in FIG. 1, a substrate 2 having a recess 22 that opens on the upper end surface 21, the LED elements 3 mounted on the bottom 221 of the recess 22, the LED elements 3 a translucent member 4 for sealing, the wavelength converting member 5 placed on the transparent member 4, the light-transmitting heat radiation is mounted on the wavelength converting member 5 covers the opening of the recess 22 a member 6, those having a.

Will be described in detail the various parts.
Base 2, which has a recess 22 that opens on the upper end surface 21, for example, those thermal conductivity such as alumina or aluminum nitride formed by molding a high insulation material.

Base 2, but is for mounting the LED element 3 described below on the bottom surface 221 of the recess 22, to the bottom surface 221, the LED element 3 is (not shown.) Wiring conductors for being electrically connected to It is formed. By this wiring conductor is connected is led to the outer surface of the light emitting device 1 through the wiring layer formed inside the base body 2 (not shown.) To an external electrical circuit board, LED device 3 and the external electric circuit board bets are electrically connected.

The side wall of the recess 22 of the base body 2 has a stepped portion 23 is formed, is configured as the edge of the translucent radiating member 6 to be described later is mounted at its upper end face.

LED element 3 is, for example, which gallium nitride on a sapphire substrate semiconductor are stacked in this order n-type layer, light emitting layer and a p-type layer, such an LED element 3 emits blue light or ultraviolet light .

LED element 3 is flip-chip mounted with the bottom surface 221 of the recess 22 of the gallium nitride-based compound semiconductor in the lower (bottom 221 side of the recess 22) of solder bumps or gold bumps.

Light-transmitting member 4, are enriched in the recess 22 and seals the LED element 3, for example, excellent translucency and heat resistance, which the difference in refractive index between the LED element 3 is made of a small silicone resin it is.

Wavelength converting member 5, inner and contains a phosphor 51 is placed on the light-transmitting member 4. Examples of such a wavelength converting member 5, for example, excellent translucency and heat resistance, but the phosphor 51 to the silicone resin refractive index difference is small between the light-transmitting member 4 include those dispersed may be those formed by filling an uncured silicone resin in which the phosphor 51 is dispersed in the recess 22, what has been processed into a sheet or may be used by cutting into a predetermined size .

It is not particularly restricted but includes a phosphor 51 that the wavelength converting member 5 containing, for example, red phosphor, green phosphor, blue phosphor, and yellow phosphor and the like.

Translucent radiating member 6 is for radiating heat of the wavelength converting member 5 covers the opening of the recess 22 is placed over the wavelength converting member 5. Such translucent radiating member 6, for example, quartz, sapphire, diamond, include those made of a material excellent in heat conductivity is high translucency such as aluminum nitride.

If translucent radiation member 6 is made of quartz, quartz does not have a cleavage property Unlike sapphire, can be cut way, frustoconical shown in FIGS. 2 and 3 There, Therefore, it is possible to make the recesses 22 of the base body 2 in frustoconical. When the recess 22 is a frustoconical, it is possible to increase the area and light-radiating member 6 and the wavelength converting member 5 and the base 2 are in contact, to conduct these heat to more efficiently substrates 2 release can do. Further, when the recess 22 is a frustoconical, even at low dimensional accuracy of the translucent radiating member 6 and the wavelength converting member 5, it is possible to closely contact with the inner peripheral surface of the recess 22, a high processing without the need for accuracy, it is possible to improve the adhesion between the light-transmitting heat radiation member 6 and the wavelength converting member 5 and the base 2. Therefore, it is possible to increase more effectively heat dissipation.

Among the light emitting device 1 according to the present embodiment, used as emitting near ultraviolet light as LED element 3, as a phosphor 51, a red phosphor, the one using a green phosphor and a blue phosphor, the LED elements 3 red phosphor excited by near ultraviolet light emitted, a green phosphor and a red light blue phosphor emits white light is emitted mixed green light and blue light. Then, near-ultraviolet light LED element 3 is emitted does not substantially affect the white the emission color of the light-emitting device 1. Thus, for example, LED elements 3 be one that emits blue light, if the blue light are constituted to have mixes with light emitted from the phosphor 51 contained in the wavelength converting member 5, the light emitting device color unevenness is likely to occur resulting from the difference in optical path length in one of the light emitting surface but, LED element 3 is be one that emits near ultraviolet light, phosphor 51, a red phosphor, green phosphor and blue phosphor there emitting device 1 is unlikely to occur such color unevenness.

Then, such, used as emitting near ultraviolet light as LED element 3, as a phosphor 51, a red phosphor, mixed light emitting device 1 emits with green phosphor and the blue phosphor, on the Planckian locus It is one that moves, a natural white very close to sunlight.

If the light emitting device 1 according to this embodiment, by the translucent radiating member 6 is placed on the wavelength converting member 5, to efficiently release heat of the wavelength converting member 5 since it, decrease in luminous efficiency and luminance of the phosphor 51 included in the wavelength converting member 5, the thermal deterioration can be effectively prevented.

The present invention is not limited to the embodiment.

For example, the wavelength converting member 5 may not necessarily those which are distributed uniformly phosphor 51 to emit light of different colors from each other, there is being juxtaposed fluorescent regions that emit light of different colors from each other it may be. Parallel That is, for example, as shown in FIG. 4, the red fluorescent region R containing a red phosphor, a green phosphor region G containing a green phosphor, and blue phosphor region B containing a blue phosphor laterally if it is set, it is possible to increase the energy conversion efficiency since no green light blue light or green phosphor blue phosphor emitted is emitted is absorbed by another phosphor 51, also a wavelength in converting member 5, the red phosphor region R, if the green fluorescent regions G and blue fluorescent regions B are laminated in the thickness direction in this order from the bottom, so degraded faster closer red phosphor to the LED element 3, the light emitting device 1 of the emission color is easily changed, if the respective fluorescent regions are juxtaposed in the horizontal direction, it is hard attached is a difference in the degradation rate of each phosphor 51, the light emitting color of the light-emitting device 1 is changed Hateful.

Further, as shown in FIG. 4, the periphery of the wavelength converting member 5, high thermal conductivity, alumina, aluminum nitride, silicon carbide, aluminum, copper, silver, gold, carbon, sapphire, particles such as diamond dispersion radiating region H may be formed comprising a. Thus if the peripheral heat dissipation region H of the wavelength converting member 5 is formed, it is possible to release even more efficient thermal wavelength converting member 5.

Furthermore, among the ultraviolet light emitted from the LED element 3, in order to block the ultraviolet light emitted to the outside without being absorbed by the phosphor 51, UV-cut on the wavelength converting member 5 or translucent heat radiation member 6 filter or the like may be provided.

Further, by providing the metal thin film of high reflectivity on the inside wall surface of the recess 22 of the base 2, or may be the inner wall surface of the concave portion 22 functions as a reflector.

Furthermore, the translucent heat radiation member 6, as shown in FIG. 5, may be one that functions as a convex lens.

Moreover, LED devices 3 may be connected by wire bonding to a wiring conductor provided on the substrate 2.

Furthermore, the translucent heat radiation member 6 and the wavelength converting member 5, as shown in FIG. 6, the vertical position may be in the embodiment the reverse, the wavelength converting member 5 translucent radiating member 6 it may be placed on top of the.

The embodiment thus the wavelength converting member 5 is placed on the transparent heat radiation member 6, as shown in FIG. 7, have stepped portions 23 are formed on the side wall of the recess 22 of the base 2 It may be the edge of the translucent radiating member 6 is configured to be placed on its upper end face, and as shown in FIG. 8, the translucent upper end surface 21 of the base 2 heat dissipating member 6 There may also be placed.

In the embodiment shown in FIG. 8, in the horizontal direction, it is large translucent radiating member 6 than the wavelength converting member 5 further has towards the translucent radiating member 6 from the base body 2 is set larger, Therefore, the side peripheral surface of the light emitting device 1 has no stepped. By setting the size of each member in this way, the heat generated from the wavelength converting member 5, to the substrate 2 through the light-transmitting heat radiation member 6, can be more efficiently conducted release.

Further, the although the exemplary embodiment the LED element 3 mounted on the substrate 2 is one, as shown in FIGS. 9 and 10, a plurality of LED elements 3 may be mounted on the base 2. In the embodiment shown in FIGS. 9 and 10, the base body 2 is composed of a frame body 2b disposed thereon and the substrate 2a, the upper surface of the substrate 2a constitutes the bottom surface 221 of the recess 22. Further, in the embodiment shown in FIGS. 9 and 10, in terms of heat dissipation efficiency and wavelength conversion efficiency, in the transverse direction, greater in the wavelength converting member 5 from the light-transmitting member 4, further moisture from the wavelength converting member 5 towards the light-radiating member 6 is set to be larger.

In addition, the present invention is not limited to the above embodiments, without departing from the scope of the present invention may be configured by appropriately combining part or all of the various configurations described above.

Thus, according to the present invention, it is possible to obtain an LED light-emitting device obtained by a variation restriction of the phosphor due to heat.

1 ... light emitting device 2 ... substrate 3 ... LED element 4 ... translucent member 5 ... wavelength converter 6 ... translucent radiating member

Claims (4)

  1. A substrate having a recess that opens to the upper end surface,
    An LED element mounted on a bottom surface of the recess,
    And the translucent member for sealing the LED element,
    Contains a phosphor, and the wavelength conversion member placed on the light-transmitting member,
    Emitting apparatus characterized by being provided with a light-transmitting heat radiating member covering the opening of the recess is placed on the wavelength converting member.
  2. Wherein the wavelength conversion member, a different color light-emitting device according to claim 1, wherein in which the fluorescent region is formed by parallel emitting light of.
  3. The LED element is one which emits near-ultraviolet light,
    The phosphor, a phosphor emitting red light, a phosphor emitting green light, and light-emitting device according to claim 1, wherein a phosphor that emits blue light.
  4. A substrate having a recess that opens to the upper end surface,
    An LED element mounted on a bottom surface of the recess,
    And the translucent member for sealing the LED element,
    And the light-transmitting heat radiating member placed over said transparent member,
    Wherein it is placed on the transparent heat radiating member covering the opening of the recess, the light emitting apparatus characterized by comprising a wavelength converting member containing a fluorescent body.
PCT/JP2010/057120 2009-04-22 2010-04-22 Light-emitting device WO2010123052A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009-104289 2009-04-22
JP2009104289 2009-04-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010537181A JPWO2010123052A1 (en) 2009-04-22 2010-04-22 The light-emitting device

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WO2010123052A1 true true WO2010123052A1 (en) 2010-10-28

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012109400A (en) * 2010-11-17 2012-06-07 Sharp Corp Light-emitting element, light-emitting device and method of manufacturing light-emitting element
CN102544312A (en) * 2010-12-15 2012-07-04 日东电工株式会社 Optical semiconductor device
EP2614528A1 (en) * 2009-06-18 2013-07-17 Bridgelux, Inc. An led array package covered with a highly thermal conductive plate
JP2013207049A (en) * 2012-03-28 2013-10-07 Nec Corp Light emitting device using wavelength conversion body
CN104040739A (en) * 2011-11-08 2014-09-10 Lg伊诺特有限公司 Light emitting means
JP2015144301A (en) * 2015-03-10 2015-08-06 日東電工株式会社 optical semiconductor device
KR101668965B1 (en) * 2015-11-27 2016-10-24 주식회사 지엘비젼 The LED package and the lighting device
EP3144724A4 (en) * 2014-05-13 2017-12-13 Appotronics (China) Corporation Wavelength conversion device, light source system and projection system

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217094A (en) * 2004-01-29 2005-08-11 Kyocera Corp Package for accommodating light emitting element and light emitting device
JP2005311170A (en) * 2004-04-23 2005-11-04 Stanley Electric Co Ltd Semiconductor light emitting device
JP2008192909A (en) * 2007-02-06 2008-08-21 Stanley Electric Co Ltd Light emitting device and its manufacturing method
JP2009010049A (en) * 2007-06-26 2009-01-15 Panasonic Electric Works Co Ltd Light-emitting device
JP2009016689A (en) * 2007-07-06 2009-01-22 Toshiba Lighting & Technology Corp Illuminator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217094A (en) * 2004-01-29 2005-08-11 Kyocera Corp Package for accommodating light emitting element and light emitting device
JP2005311170A (en) * 2004-04-23 2005-11-04 Stanley Electric Co Ltd Semiconductor light emitting device
JP2008192909A (en) * 2007-02-06 2008-08-21 Stanley Electric Co Ltd Light emitting device and its manufacturing method
JP2009010049A (en) * 2007-06-26 2009-01-15 Panasonic Electric Works Co Ltd Light-emitting device
JP2009016689A (en) * 2007-07-06 2009-01-22 Toshiba Lighting & Technology Corp Illuminator

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2614528A1 (en) * 2009-06-18 2013-07-17 Bridgelux, Inc. An led array package covered with a highly thermal conductive plate
EP2614528A4 (en) * 2009-06-18 2013-12-11 Bridgelux Inc An led array package covered with a highly thermal conductive plate
JP2012109400A (en) * 2010-11-17 2012-06-07 Sharp Corp Light-emitting element, light-emitting device and method of manufacturing light-emitting element
CN102544312A (en) * 2010-12-15 2012-07-04 日东电工株式会社 Optical semiconductor device
JP2012129361A (en) * 2010-12-15 2012-07-05 Nitto Denko Corp Optical semiconductor device
CN104040739B (en) * 2011-11-08 2018-01-30 Lg伊诺特有限公司 Light emitting means
CN104040739A (en) * 2011-11-08 2014-09-10 Lg伊诺特有限公司 Light emitting means
JP2013207049A (en) * 2012-03-28 2013-10-07 Nec Corp Light emitting device using wavelength conversion body
EP3144724A4 (en) * 2014-05-13 2017-12-13 Appotronics (China) Corporation Wavelength conversion device, light source system and projection system
JP2015144301A (en) * 2015-03-10 2015-08-06 日東電工株式会社 optical semiconductor device
KR101668965B1 (en) * 2015-11-27 2016-10-24 주식회사 지엘비젼 The LED package and the lighting device

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