KR20140141371A - Printed Circuit Board and the method for fabricating LED package having the same - Google Patents

Printed Circuit Board and the method for fabricating LED package having the same Download PDF

Info

Publication number
KR20140141371A
KR20140141371A KR1020130063071A KR20130063071A KR20140141371A KR 20140141371 A KR20140141371 A KR 20140141371A KR 1020130063071 A KR1020130063071 A KR 1020130063071A KR 20130063071 A KR20130063071 A KR 20130063071A KR 20140141371 A KR20140141371 A KR 20140141371A
Authority
KR
South Korea
Prior art keywords
substrate
circuit board
printed circuit
core
light emitting
Prior art date
Application number
KR1020130063071A
Other languages
Korean (ko)
Inventor
박준용
이형진
김효정
박인규
Original Assignee
서울바이오시스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to KR1020130063071A priority Critical patent/KR20140141371A/en
Publication of KR20140141371A publication Critical patent/KR20140141371A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0209—External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation

Abstract

A printed circuit board of the present technology is a printed circuit board on which an electronic element is mounted, comprising: a core portion made of an insulating material; A protective element inserted in the core portion; A connection electrode electrically connecting the protection element and the electronic element; And a penetrating electrode disposed around the protective element while penetrating the core portion, wherein the protective element has a larger area than the electronic element.

Description

Technical Field [0001] The present invention relates to a printed circuit board and a method of manufacturing a light emitting device package including the printed circuit board.

Disclosure of the Invention The present disclosure relates to a light emitting device, and more particularly, to a printed circuit board and a method of manufacturing a light emitting device package including the same.

BACKGROUND ART Light emitting diodes (LEDs) are devices that convert electrical energy into light energy to generate light. Generally, the light emitting diode has a heterojunction structure of a p-type semiconductor and an n-type semiconductor and includes an active layer . A light emitting diode (LED) is mounted on a printed circuit board (PCB) including a wiring layer and an insulating layer to fabricate a light emitting device package structure. A light emitting diode (LED) mounted on a printed circuit board is configured to apply an electric current through an electrode formed on a printed circuit board to emit light to the outside through a light emitting layer.

Since the development of light emitting diodes, the application range has been gradually expanded. Particularly, as the information communication device is becoming smaller and slimmer, various components of the device including the light emitting diode are further miniaturized, while the demand for high efficiency is further increasing. Particularly, a light emitting device package is designed to supply a larger current as high light emission characteristics are required, and a large amount of heat is generated from a light emitting diode while a large current is supplied. In the light emitting device package, the heat generated from the light emitting diode directly affects the light emitting performance and the service life. Accordingly, a heat dissipation characteristic capable of effectively dissipating heat generated from the light emitting diode to the outside has become an important issue. One of the methods for improving the heat dissipation characteristics of a light emitting device package is to introduce a metal printed circuit board in which copper is introduced into a core to manufacture a light emitting device package. However, when copper (Cu) is introduced into the core portion, there is a problem that it is difficult to miniaturize the size of the light emitting device package by applying copper to a thick thickness in order to improve heat radiation characteristics. In addition, a process error occurs in the process of forming a through hole via which the electrodes on the upper and lower sides of the metal printed circuit board are connected to each other, thereby causing a problem. For example, since the diameter of the penetrating electrode formed on the printed circuit board is generally larger than the diameter of the electrode formed on the light emitting diode, a defect that the penetrating electrode is not completely filled can occur.

In addition to this heat dissipation property, the light emitting diode is vulnerable to electrostatic discharge (ESD) caused by static electricity introduced from the outside, causing damage to the light emitting diode, thereby decreasing reliability. Accordingly, there is a demand for a light emitting device having excellent heat dissipation characteristics and electrostatic discharge characteristics.

Embodiments of the present disclosure provide a printed circuit board capable of reducing the size of a light emitting device while introducing a zener diode made of a material having excellent heat dissipation characteristics and a method of manufacturing a light emitting device package including the same.

A printed circuit board according to the present disclosure is a printed circuit board on which an electronic element is mounted, comprising: a core portion made of an insulating material; A protective element inserted in the core portion; A connection electrode electrically connecting the protection element and the electronic element; And a penetrating electrode disposed around the protective element while passing through the core portion, wherein the protective element has a larger area than the electronic element.

The core portion includes metal thin films formed on one surface and the other surface, respectively, and the metal thin films are electrically connected by the penetrating electrode, and the metal thin films further include wiring patterns on the upper portion.

Wherein the core comprises a first core and a second core, wherein the first core includes a first metal thin film formed on one surface and a cavity on which a protective element is mounted, and the second core has a second metal thin film And the other surface of the second core is bonded to the exposed surface of the first core.

The protection device includes: a first metal electrode formed on a surface of the first silicon substrate, the first silicon substrate including an n-type impurity and the second silicon substrate including a p-type impurity; And a second metal electrode formed on the surface of the second silicon substrate.

The first and second metal electrodes are electrically connected to the electronic device by a connection electrode, and at least one connection electrode is formed.

The electronic device includes first and second pads electrically connected to the connection electrode, and the first pad is formed in a straight line with the connection electrode.

The metal thin film includes an open region between the first pad and the second pad to partially isolate the adjacent metal thin films by partially exposing the surface of the core.

A method of manufacturing a light emitting device package including a printed circuit board according to an embodiment of the present disclosure includes: preparing a first substrate; Forming a cavity for mounting the protection device on the first substrate using a physical or chemical method; Mounting a protection element in the cavity; Preparing a second substrate; Forming a printed circuit board having the protection element inserted therein by joining the first substrate and the second substrate opposite to each other; Forming a first via hole exposing a part of the surface of the protection element on the printed circuit board using a physical or chemical method and a second via hole penetrating the printed circuit board; Filling the first and second via holes with a metal material to form a connection electrode and a through electrode; And disposing an electronic device on the printed circuit board.

In the present disclosure, the protection element may have a larger area than the electronic element.

The protection element is configured such that a first silicon substrate including an n-type impurity and a second silicon substrate including a p-type impurity are in contact with each other, wherein metal electrodes are formed on the first silicon substrate and the second silicon substrate, respectively Structure.

The first substrate or the second substrate is formed of a structure in which a metal thin film is bonded to a surface of a core including an insulating material, and the insulating material includes an insulating material made of ceramic, insulating material, resin, or composite material.

The forming of the cavity is preferably performed using laser drilling or mechanical drilling from the exposed surface of the first substrate.

The step of joining the first substrate and the second substrate may be performed using a thermo-compression method.

According to the present disclosure, a zener diode made of a material having excellent thermal conductivity can be formed to have a larger area than the light emitting diode chip, thereby improving the heat radiation characteristics of the light emitting device.

Further, by forming the light emitting device package in a structure in which a zener diode is inserted in the printed circuit board, the overall size of the light emitting device package can be made small and slim.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view for explaining a light emitting device package according to an embodiment of the present disclosure; FIG.
FIGS. 2 to 13 are cross-sectional views illustrating a method of manufacturing a light emitting device package according to an embodiment of the present disclosure.
14 is a schematic view for explaining an example of a front view of a light emitting device package of the present disclosure;
15 and 16 are schematic views for explaining another example of a front view of the light emitting device package of the present disclosure.

Embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. In the drawings, the width, thickness, and the like of the components are enlarged in order to clearly illustrate the components of each device. It is to be understood that when an element is described as being located on another element, it is meant that the element is directly on top of the other element or that additional elements can be interposed between the elements .

Like numbers refer to like elements throughout the several views. It is to be understood that the singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise, and the terms "comprise" Or combinations thereof, and does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Further, in carrying out the method or the manufacturing method, the respective steps of the method may take place differently from the stated order unless clearly specified in the context. That is, each process may occur in the same order as described, may be performed substantially concurrently, and may not be excluded in some cases in the reverse order.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view for explaining a light emitting device package according to an embodiment of the present disclosure; FIG. 13 is a diagram for explaining the structure of a light emitting diode chip. And Fig. 14 is a schematic view for explaining an example of a front view of the light emitting device package of the present disclosure.

1, a heat dissipation type light emitting device package according to the present disclosure includes a printed circuit board (PCB) 129 including a core portion 127 having circuit wiring patterns formed on an outer side thereof, a core portion 127, And a light emitting diode chip 300 disposed on the printed circuit board 129. The light emitting diode chip 300 is mounted on the printed circuit board 129, Here, the protection device 200 may include a zener diode. In this case, the first width W1 of the protection element 200 is formed to be larger than the second width W2 of the light emitting diode chip 300, and is formed to have a larger area than the light emitting diode chip 300 .

The printed circuit board 129 further includes a cavity in which the protection element 200 formed in the core portion 127 is mounted. Here, the core portion 127 is formed of an insulating material including a ceramic, an insulating material, or a resin. The protection element 200 includes a zener diode, and is configured such that a first silicon substrate 205 including an n-type impurity and a second silicon substrate 210 including a p-type impurity are in contact with each other, Metal electrodes 215 and 220 are formed on the silicon substrate 205 and the second silicon substrate 210, respectively.

13, a light emitting diode chip 300 includes an n-type compound semiconductor layer 310, an active layer 315, a p-type compound semiconductor layer 310, and a p-type compound semiconductor layer 300 stacked on a substrate 305 A semiconductor layer 320, an n-type electrode 325, and a p-type electrode 330. Here, the substrate 305 may be made of a transparent material including sapphire. The n-type compound semiconductor layer 310 may include gallium nitride (GaN) doped with an n-type conductivity type impurity. The doped n-type conductivity-type impurity can be selected from the group of n-type conductivity-type impurities including silicon (Si), germanium (Ge) or tin (Sn) The active layer 315 may be a single quantum well structure or a multi quantum well structure of a gallium nitride (GaN) system. The p-type compound semiconductor layer 320 may include gallium nitride (GaN) doped with a p-type conductivity type impurity. The doped p-type conductivity-type impurity may be selected from the group of p-type conductivity-type impurities including magnesium (Mg) or zinc (Zn).

The light emitting diode chip 300 is mounted on the first wiring pattern 190a through the first pad 195a and the second pad 195b and is electrically connected to the printed circuit board 129. [ An underfill layer 197 is formed around the light emitting diode chip 300 attached to the printed circuit board 129 by the first and second pads 195a and 195b to stably fix the light emitting diode chip 300 .

The light emitting device package includes a connection electrode 160 electrically connecting the protection element 200 and the LED chip 300 and a connection terminal 160 formed on the periphery of the protection element 200 while passing through the core portion 127 of the printed circuit board 129 And further includes a plurality of through electrodes 170 arranged. Here, the connection electrode 160 electrically connects the protection element 200 and the LED chip 300, and may be disposed in a straight line with the first pad 195a. 14, a plurality of connecting electrodes 160 are arranged on the printed circuit board 129. The plurality of connecting electrodes 160 are formed on the printed circuit board 129, .

The light emitting device package according to the present disclosure has a first width W1 that is larger than the second width W2 of the LED chip 300 so that the protection device 200 has a larger area than the LED chip 300 And the area for emitting heat generated from the light emitting diode chip 300 to the outside is increased, so that the heat emission efficiency can be further improved. An insulating material or resin is introduced into the core portion 127 of the printed circuit board 129 instead of copper requiring a thick thickness and the protective element 200 is inserted into the core portion 127 The entire thickness of the light emitting device package can be reduced to make it smaller and slimmer.

Hereinafter, a method of manufacturing a light emitting device package according to an embodiment of the present disclosure will be described with reference to FIGS. 2 to 13. FIG.

Referring to FIG. 2, a first substrate 100 is prepared. The first substrate 100 is prepared as a copper clad laminate (CCL). The copper clad laminate 100 may have a structure in which the first metal thin film 110 is bonded to the first surface 102 of the first core 105. The first core 105 may comprise a ceramic, an insulating material, or an insulating material made of a resin or a composite material. The first metal thin film 110 may include copper (Cu). Here, the copper-clad laminate 100 may be formed to expose a ceramic or an insulating layer on the second surface 104 opposite to the first surface 102 of the first core 105. In the following description, the notations such as " first "and" second "are used to distinguish members from each other for convenience of explanation rather than order or other members. The first core 105 may be composed of an insulating layer or silicon provided with multilayer wiring lines (not shown) and via holes (not shown). Wherein the first metal foil 110 bonded to the first surface 102 of the first core 105 may be introduced to form circuit wiring on the surface in a subsequent process.

Referring to FIG. 3, a cavity 115 is formed on the first substrate 100. The cavity 115 serves to designate a space for mounting a subsequent protection element (not shown). For this purpose, the cavity forming process is performed using laser drilling or mechanical drilling from the exposed second surface 104 of the first substrate 100. In the cavity forming process, the metal thin film 110 formed on the first surface 102 of the first substrate 100 is not exposed. By this cavity forming process, a cavity 115 including sidewalls and a bottom surface is formed in the first core 105 of the first substrate 100. The cavity 115 may be formed to be equal to or larger than the area of the subsequent protective element.

Referring to FIG. 4, a protection device 200 is prepared. The protection element 200 may be introduced to prevent ESD (Electrostatic Discharge) of the LED chip to be disposed thereafter and to discharge heat emitted from the LED chip to the outside. The protection device 200 according to the embodiment of the present disclosure may include a zener diode. As shown in FIG. 4, the protection device 200 is configured so that the first silicon substrate 205 including the n-type impurity is in contact with the second silicon substrate 210 including the p-type impurity. A first electrode 215 including a metal material is formed on the first silicon substrate 205 and a second electrode 220 including a metal material is formed on the second silicon substrate 210. The first electrode 215 and the second electrode 220 are formed of a material having excellent electrical conductivity including copper (Cu), gold (Au), or silver (Ag) It is preferable that the thickness of the second electrode layer 220 is 5 mu m or more, but it may be formed to a thickness less than 5 mu m.

A zener diode is a semiconductor device that uses a phenomenon in which a large current starts to flow suddenly at a certain voltage when a voltage of a relatively large reverse voltage is applied to a semiconductor p-n junction or an n-p junction and the voltage is kept constant. When the Zener diode is applied to the light emitting device package, the constant voltage can be maintained even when the static electricity or the abrupt current is supplied, so that the electrostatic discharge (ESD) can be prevented and the reliability of the product can be increased. The protection element 200 including the Zener diode is formed to have a first width W1 wider than the LED chip to be disposed thereafter to have a larger area as a whole than the LED chip.

Referring to FIG. 5, a protection element 200 is mounted in a cavity 115 formed on a first core 105 of a first substrate 100. Here, the protection element 200 can be fixed on the cavity 115 using a bonding material. To this end, a bonding material including a nonconductive paste or a nonconductive tape is applied on the exposed bottom surface of the cavity 115, although not shown in the drawing. Next, the protective element 200 can be mounted on the bonding material and fixed. Also, the protection element 200 may be inserted and fixed in the cavity 115 without a bonding material.

Referring to FIG. 6, a second substrate 130 is prepared. The second substrate 130 may be composed of a CCL having the same configuration as that of the first substrate 100. For example, the copper-clad laminate of the second substrate 130 may have a structure in which the second metal thin film 125 is bonded to the first surface 122 of the second core 120. The second core 120 may be formed of a material equivalent to that of the first core 105, for example, an insulating material. The second core 120 may include an insulating material made of a ceramic, an insulating material, a resin, or a composite material. The second metal thin film 125 may include copper (Cu). The second substrate 130 may be formed such that the ceramic or insulating layer is exposed at the second surface 124 facing the first surface 122 of the second core 120. Here, the second metal foil 125 bonded to the first surface 122 of the second core 120 may be introduced to form circuit wiring on the surface in a subsequent process. The second substrate 130 is moved in a direction in which the second surface 104 of the first core 105 and the second surface 124 of the second core 120 are opposed to each other, The second substrate 130 is thermo-compressed.

7, the first core 105 of the first substrate 100 and the second core 120 of the second substrate 130 are bonded together by thermal compression to form one core portion 127, . Thus, the printed circuit board 129 is formed in a shape in which the protection element 200, for example, a zener diode is embedded in the core portion 127. [ The first metal thin film 110 is disposed on one side of the core 127 and the second metal thin film 125 is disposed on the other side.

Referring to FIG. 8, a first via hole 140 and a second via hole 150 are formed on a printed circuit board 129. The first via hole 140 is formed on the first metal thin film 110 of the printed circuit board 129 and the core portion 127 made of an insulating material by a physical or chemical method, A part of the surface of the substrate 220 is exposed. As the plurality of vias are formed, the first via hole 140 preferably has a plurality of via-holes formed on the printed circuit board 129 as the thermal and electrical characteristics thereof are improved. The first via hole 140 is formed on the second metal thin film 125 of the printed circuit board 129 and on the core portion 127 made of an insulating material by a physical or chemical method And expose a part of the surface of the upper electrode 215. [ In this case, the first via hole 140 may be formed by performing laser drilling or mechanical drilling.

Next, a second via hole 150 formed on the printed circuit board 129 is formed through the core portion 127 from the first metal thin film 110 to the second metal thin film 125. The second via hole 150 passing through the core portion 127 may be formed into a through-hole shape by performing laser drilling or mechanical drilling. In this case, the second via hole 150 may be formed to be larger than the hole size of the first via hole 140.

9, a first via hole 140 formed on a printed circuit board 129 is embedded with a metal material so that an upper electrode 215 or a lower electrode 220 of the protection device 200 and a circuit And a connection electrode 160 electrically connected to the wiring is formed. The second via hole 150 is filled with a metal material to form a penetrating electrode 170 electrically connected to the circuit wiring to be formed later. Also, a metal film may be grown on the outer wall of the second via hole 150 to connect the second metal thin film 125 and the first metal thin film 110, and then fill a vacant space with a conductive material or a non-conductive material. Here, the penetrating electrode 170 and the connecting electrode 160 can be formed by electroless plating or electrolytic plating. The metal material formed using the electroless plating method or the electrolytic plating method can be formed by including copper (Cu). On the other hand, as the plurality of connection electrodes are formed, the thermal and electrical characteristics are improved, so that a plurality of connection electrodes 160 are formed on the printed circuit board 129 as shown in FIG.

10, a patterning process is performed on the first metal thin film 110 and the second metal thin film 125 which are respectively disposed on one surface and the other surface of the core portion 127, A first open region 193a and a second open region 193b are formed. Here, the first open region 193a and the second open region 193b serve to isolate and insulate the adjacent metal thin films.

11, a first wiring pattern 190a is formed on a front portion A of a printed circuit board 129 and a rear portion B is formed on a front portion A of the printed circuit board 129, A second wiring pattern 190b is formed. The first and second wiring patterns 190a and 190b serve as a wiring layer serving as an electrical path so that a current can flow through the LED chip to be disposed thereafter. The material used as the first and second wiring patterns 190a and 190b is a material having excellent electrical characteristics and heat transfer characteristics and can be used as, for example, nickel (Ni), gold (Au), or the like or an alloy thereof. The first and second wiring patterns 190a and 190b may be formed by applying an electroless plating method or an electrolytic plating method.

12 and 13, an electronic element, for example, a light emitting diode chip 300 is attached on a first wiring pattern 190a formed on a printed circuit board 129. [ The light-emitting diode chip 300 has a p-n junction structure of a p-type compound semiconductor layer and an n-type semiconductor layer as a portion where light is generated. As a result of current flow, extra electrons and holes recombine with each other to generate light.

13, the light emitting diode chip 300 includes an n-type compound semiconductor layer 310, an active layer 315, and a p-type compound semiconductor layer 310 stacked on a substrate 305, A layer 320, an n-type electrode 325 and a p-type electrode 330. [ Here, the substrate 305 may be made of a transparent material including sapphire. The n-type compound semiconductor layer 310 may include gallium nitride (GaN) doped with an n-type conductivity type impurity. The doped n-type conductivity-type impurity can be selected from the group of n-type conductivity-type impurities including silicon (Si), germanium (Ge) or tin (Sn)

The active layer 315 may be a single quantum well structure or a multi quantum well structure of a gallium nitride (GaN) system. The p-type compound semiconductor layer 320 may include gallium nitride (GaN) doped with a p-type conductivity type impurity. The doped p-type conductivity-type impurity may be selected from the group of p-type conductivity-type impurities including magnesium (Mg) or zinc (Zn).

Type compound semiconductor layer 320 and the n-type compound semiconductor layer 310 when the voltage is applied between the p-type electrode 330 and the n-type electrode 325. The light emitting diode chip 300 having the above- And holes and electrons are recombined in the active layer 315, so that extra energy is converted into light and emitted to the outside.

The light emitting diode chip 300 according to the present disclosure may be connected to the first wiring pattern 190a using a flip bonding method. The flip bonding method is a method of directly connecting the electrodes of the light emitting diode chip 300 to the printed circuit board or the wiring electrode. As shown in FIG. 12, the flip bonding method is a method of connecting the electrodes 1 wiring pattern 190a so that the light emitting diode chip 300 is directly connected to the printed circuit board 129 by bonding. Since the flip bonding method does not require a separate space for wire connection as compared with wire bonding, there is an advantage that a small-sized light emitting device package can be manufactured.

The first and second pads 195a and 195b can be understood as protruding connection portions formed by plating or printing in order to electrically connect the light emitting diode chip 300 to the printed circuit board 129. The first and second pads 195a and 195b may be formed of gold (Au), copper (Cu), tin (Sn), or a combination of two or more thereof for electrical connection. The first pad 195a may be disposed in a straight line with the connection electrode 160. An underfill layer 197 is buried in the periphery of the light emitting diode chip 300 attached to the printed circuit board 129 by the first and second pads 195a and 195b to form the light emitting diode chip 300 Stable fixation. The underfill layer 197 may be applied including, for example, a resin.

The light emitting device package formed by connecting the light emitting diode chip 300 to the printed circuit board 129 includes a protection element 200 including a zener diode inserted in the printed circuit board 129, The electrostatic discharge (ESD) caused by the static electricity can be prevented. As one of methods for improving the heat dissipation characteristic in the conventional case, a metal printed circuit board in which copper (Cu) having a thermal conductivity value of 400 W / mK is introduced into a core is introduced. However, there is a problem that it is difficult to miniaturize and slim the size of the light emitting device package because copper has to be applied to a thick thickness in order to improve heat dissipation characteristics. Therefore, when an insulating material or resin is introduced to reduce the thickness of the core portion, heat dissipation is deteriorated due to insufficient heat dissipation due to the insulating material or resin having a low thermal conductivity of 0.5 to 20 W / mK there is a problem.

In contrast, in the light emitting device package according to the present invention, a zener diode fabricated from silicon having a thermal conductivity of 150 to 200 W / mK and having a good thermal conductivity is introduced into the protection device 200, And can be discharged to the outside. 12, the protection element 200 including the Zener diode may have a first width W1 that is greater than the second width W2 of the LED chip 300, so that the light emitting diode chip 300 ), The heat releasing efficiency can be further improved as the area of heat generated from the light emitting element is increased. In addition, instead of disposing the protection element 200 on the same layer as the light emitting diode chip 300, the protection element 200 is inserted into the printed circuit board 129, thereby reducing the overall size of the light emitting device package. It can be made slim.

15 and 16 are schematic views for explaining another example of a front view of the light emitting device package of the present disclosure.

Referring to FIGS. 15 and 16, a plurality of light emitting diode chips 300a, 300b, 300c and 300d are spaced apart from each other on a printed circuit board 129 in a light emitting device package according to an embodiment of the present disclosure. A protection element 200 having a larger area than the individual light emitting diode chips 300a, 300b, 300c and 300d is inserted into the printed circuit board 129. [ The light emitting diode chips 300a, 300b, 300c and 300d are connected to the protection element 200 inserted in the printed circuit board 129 through the connection electrode 160. [ A penetrating electrode 170 is disposed around the protective element 200. At this time, the printed circuit board 129 is made of an insulating material or an insulating material including a resin. 15, a plurality of light emitting diode chips 300a, 300b, 300c, and 300d may be spaced apart from each other and connected in parallel on a single protection device 200 . 16, each of the plurality of light emitting diode chips 300a, 300b, 300c and 300d may be spaced apart from each other on a plurality of protective elements 200a, 200b, 200c and 200d, So as to form a series connection structure. These technical features may be changed within the technical scope of the embodiment.

100: first substrate 105: first core
110: first metal thin film 115: cavity
120: second core 125: second metal thin film
130: second substrate 127: core
129: printed circuit board 140: first via hole
150: second via hole 160: connecting electrode
170: penetrating electrode 190a: first wiring pattern
190b: second wiring pattern 200: protection element
300: Light emitting diode chip

Claims (20)

A printed circuit board on which an electronic device is mounted,
A core portion made of an insulating material;
A protective element inserted in the core portion;
A connection electrode electrically connecting the protection element and the electronic element; And
And a penetrating electrode disposed around the protective element while passing through the core portion,
Wherein the protection element has a larger area than the electronic element. The method according to claim 1,
Wherein the core portion includes metal thin films formed on one surface and the other surface, respectively,
And the metal thin films are electrically connected by the penetrating electrode. 3. The method of claim 2,
Wherein the metal foils further comprise wiring patterns on top of each other. The method according to claim 1,
Wherein the core portion is composed of a first core and a second core,
Wherein the first core includes a first metal thin film formed on one side and a cavity on which the protection element is mounted. 5. The method of claim 4,
Wherein the second core comprises a second metal foil on one side,
And the other surface of the second core is bonded to the exposed surface of the first core. The plasma display apparatus according to claim 1,
a first silicon substrate including an n-type impurity and a second silicon substrate including a p-type impurity are configured to be in contact with each other,
A first metal electrode formed on the surface of the first silicon substrate;
And a second metal electrode formed on the surface of the second silicon substrate. The method according to claim 6,
Wherein the first and second metal electrodes are electrically connected to the electronic device by a connection electrode,
Wherein at least one connection electrode is formed. The method according to claim 1,
Wherein the electronic device includes first and second pads electrically connected to the connection electrode, the first pad being formed in a straight line with the connection electrode. The method according to claim 2 or 8,
Wherein the metal thin film includes an open region between the first pad and the second pad for partially exposing a surface of the core portion to insulate the adjacent metal thin films. 5. The method of claim 4,
Wherein the cavity has a larger area than the electronic device. 5. The method of claim 4,
Wherein the cavity is formed to have the same or larger area as the protection element. 3. The method of claim 2,
Wherein the metal layer is made of copper. The method of claim 3,
Wherein the wiring pattern is made of Ni, Au, or an alloy thereof.
Preparing a first substrate;
Etching the first substrate to form a cavity for mounting the protection device;
Mounting a protection element in the cavity;
Preparing a second substrate;
Forming a printed circuit board having the protection element inserted therein by joining the first substrate and the second substrate opposite to each other;
Etching the printed circuit board to form a first via hole exposing a part of the surface of the protection element and a second via hole penetrating the printed circuit board;
Filling the first and second via holes with a metal material to form a connection electrode and a through electrode; And
And disposing an electronic device on the printed circuit board. 15. The method of claim 14,
Wherein the protection element has a larger area than the electroluminescent element to dissipate heat generated from the electronic element. 15. The method of claim 14,
The protection element is configured such that a first silicon substrate including an n-type impurity and a second silicon substrate including a p-type impurity are in contact with each other, wherein metal electrodes are formed on the first silicon substrate and the second silicon substrate, respectively Wherein the light emitting device package has a light emitting device package. 15. The method of claim 14,
Wherein the first substrate or the second substrate is formed by bonding a metal thin film to a surface of a core including an insulating material. 18. The method of claim 17,
Wherein the insulator comprises an insulator made of a ceramic, an insulating material, a resin, or a composite material. 15. The method of claim 14,
Wherein the forming of the cavity is performed using laser drilling or mechanical drilling from an exposed surface of the first substrate. 15. The method of claim 14,
Wherein the step of bonding the first substrate and the second substrate is performed using a thermo-compression method.
KR1020130063071A 2013-05-31 2013-05-31 Printed Circuit Board and the method for fabricating LED package having the same KR20140141371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020130063071A KR20140141371A (en) 2013-05-31 2013-05-31 Printed Circuit Board and the method for fabricating LED package having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130063071A KR20140141371A (en) 2013-05-31 2013-05-31 Printed Circuit Board and the method for fabricating LED package having the same

Publications (1)

Publication Number Publication Date
KR20140141371A true KR20140141371A (en) 2014-12-10

Family

ID=52458916

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130063071A KR20140141371A (en) 2013-05-31 2013-05-31 Printed Circuit Board and the method for fabricating LED package having the same

Country Status (1)

Country Link
KR (1) KR20140141371A (en)

Similar Documents

Publication Publication Date Title
TWI692122B (en) Light emitting diode package structure and manufacturing method thereof
US8441121B2 (en) Package carrier and manufacturing method thereof
JP4325412B2 (en) LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MANUFACTURING METHOD
TWI437930B (en) Package carrier and manufacturing method thereof
US8415780B2 (en) Package carrier and manufacturing method thereof
TWI420695B (en) Compound semiconductor device package module structure and fabricating method thereof
TW201343013A (en) Package carrier and manufacturing method thereof
US10896897B2 (en) LED display module and method of making thereof
JP2009260073A (en) Semiconductor light emitting device
US20130062656A1 (en) Thermally enhanced optical package
CN101779301A (en) Light emitting device
US7867908B2 (en) Method of fabricating substrate
TWI445100B (en) Package structure and manufacturing method thereof
US11670668B2 (en) Light-emitting device
TWI495160B (en) Flip-chip light emitting diode and manufacturing method and application thereof
TWI473299B (en) Flip-chip light emitting diode and manufacturing method and application thereof
US11171072B2 (en) Heat dissipation substrate and manufacturing method thereof
KR100631111B1 (en) A package for led device and manufacturing method thereof
KR20140141371A (en) Printed Circuit Board and the method for fabricating LED package having the same
KR101129002B1 (en) Optical package and manufacturing method of the same
JP2014033233A (en) Light emitting device
KR20120069048A (en) Light emitting device and method of manufacturing the same
KR101146656B1 (en) Optical package and manufacturing method of the same
KR101146659B1 (en) Optical package and manufacturing method of the same
KR101136392B1 (en) Optical package and manufacturing method of the same

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination