KR20140110431A - Carbon Based Electronic Device and Its Manufacturing Methods with Locally Reduced Graphene Oxide - Google Patents

Carbon Based Electronic Device and Its Manufacturing Methods with Locally Reduced Graphene Oxide Download PDF

Info

Publication number
KR20140110431A
KR20140110431A KR1020130024729A KR20130024729A KR20140110431A KR 20140110431 A KR20140110431 A KR 20140110431A KR 1020130024729 A KR1020130024729 A KR 1020130024729A KR 20130024729 A KR20130024729 A KR 20130024729A KR 20140110431 A KR20140110431 A KR 20140110431A
Authority
KR
South Korea
Prior art keywords
graphene oxide
thin film
graphene
oxide thin
film layer
Prior art date
Application number
KR1020130024729A
Other languages
Korean (ko)
Other versions
KR102039748B1 (en
Inventor
김용수
최학순
Original Assignee
울산대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 울산대학교 산학협력단 filed Critical 울산대학교 산학협력단
Priority to KR1020130024729A priority Critical patent/KR102039748B1/en
Priority to PCT/KR2014/001877 priority patent/WO2014137180A1/en
Publication of KR20140110431A publication Critical patent/KR20140110431A/en
Application granted granted Critical
Publication of KR102039748B1 publication Critical patent/KR102039748B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/003—Apparatus or processes specially adapted for manufacturing conductors or cables using irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/20—Graphite
    • C01B32/21—After-treatment
    • C01B32/23—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The present invention relates to a graphene group carbon based electronic device and a manufacturing method thereof. The graphene group carbon based electronic device includes: a substrate; a graphene oxide thin film formed on the substrate; a gate insulating layer formed on the graphene oxide thin film; and a gate electrode formed on the insulating layer. A locally reduced graphene oxide can be obtained by emitting a laser onto one surface of the graphene oxide thin film. According to the present invention, resistance due to the reduction of graphene oxide is reduced, and transparency improved.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a carbon-based electronic device using local reduction of graphene oxide and a manufacturing method thereof,

The present invention relates to a carbon-based electronic device using local reduction of a graphene oxide thin film layer and a manufacturing method thereof, and more particularly, to a carbon-based electronic device using graphene oxide thin film layer, Based carbon-based electronic device and a method of manufacturing the same.

Graphene is a nanomaterial of a single atom in which carbon atoms are arranged in a hexagonal basic form on a two-dimensional plate-like structure. Due to its excellent mechanical strength, chemical and thermal stability, and excellent electric and electronic properties, .

Graphene has excellent physical strength, specifically known as 1,100 GPa, more than 200 times that of steel. Good physical strength is due to the presence of hard carbon bonds and the absence of bonds in the faults.

Also, graphene is known to have excellent thermal conductivity of about 500 W / mK at room temperature. The thermal conductivity of graphene is more than 50% higher than that of CNT, and is 10 times larger than metals such as copper and aluminum. The excellent thermal conductivity of this graphene can easily transfer atomic vibrations, and it also affects the electron's long average free path.

Graphene has a fast electron mobility and a long average free path of electrons. For example, the maximum electron mobility of graphene at room temperature is 2000,000 cm 2 / Vs. The electron mobility of graphene is due to the fact that the degree of scattering which inhibits the movement of electrons is very small and has a long average free path. Therefore, it has a resistance value lower than 35% as compared with copper which is known to have a low resistance.

On the other hand, synthesis of large-area graphene is an important task for industrial application of graphene, and the synthesis method is largely divided into a mechanical peeling from graphite and a chemical synthesis from carbon source.

Examples of the mechanical peeling from graphite include a method of separating single-layer graphene using the adhesive force of an adhesive tape originally developed by Geim's research team, a method of chemically peeling by dispersing in a solution in a surfactant or the like, (GO / rGO) by dispersing the phase of the solution in which the solution is made and physically / chemically reducing it. Methods for chemically synthesizing carbon sources include thermochemical vapor deposition, plasma CVD, chemical synthesis, and thermal decomposition of SiC (silicon carbide).

In the case of mechanical peeling, highly crystalline graphene can be obtained, but it is disadvantageous in that it is difficult to control the shape. The chemical peeling method and the reduction method of graphite oxide can obtain a large amount of graphene, but there is a problem that the crystallinity is deteriorated due to structural defects or the like which occur during processing.

In the case of chemical vapor deposition (CVD), a thin metal plate made of catalytic metal such as copper or platinum is placed in the inner space of the graphene synthesis chamber, and hydrocarbons such as methane or ethane are introduced into the graphene synthesis chamber A method of synthesizing graphene on the surface of a metal thin plate by heating the inner space of the graphene synthesis chamber to a high temperature after injection into an internal space (Korean Patent Laid-Open Publication No. 2011-0064164), has a higher purity A desired size of graphene can be made, but the amount of graphene produced is so small that the problem of poor productivity is pointed out.

On the other hand, the epitaxial synthesis method using the pyrolysis of SiC, which is the most typical synthesis method (Korean Patent Laid-Open Publication No. 2009-0124330), is a method of pyrolyzing SiC to vaporize Si and form graphene on the surface of SiC through C re- Since the carbon source is carbon contained in SiC itself, the experimental method is simple and it can be grown to wafer-level graphene crystals, which can be made large, and since the graphene / SiC structure is easy to apply to the semiconductor process, It is emerging as an alternative to synthesis. However, thermal decomposition of the surface flatness of the SiC SiC helped by the formation of pores yes or more small as 1500 ℃ with 30 ~ 200 nm size of the fin temperature, 1 × 10 -8 Pa of the second low pressure is required for peeling off the peeling mechanically Has a problem that electrical characteristics are lower than that of graphene obtained by the method.

Korean Patent Publication No. 10-2011-0064164

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a graphene carbon-based electronic device having improved transparency without inducing a subsequent patterning process by inducing local reduction of a graphene oxide thin- On a single substrate at the same time.

A second object of the present invention is to provide a method for manufacturing a graphene carbon-based electronic device capable of local reduction of a graphene oxide thin film layer.

According to an aspect of the present invention, there is provided a graphene carbon-

Board; A graphene oxide thin film layer formed on the substrate; A gate insulating layer formed on the graphene oxide thin film layer; And a gate electrode formed on the insulating layer, wherein the graphene oxide thin film layer can be locally reduced by irradiating a laser on one surface thereof.

At this time, the laser may be an excimer laser.

The graphene oxide thin film layer may be integrally formed on the same surface with the drain electrode, the source electrode, and the channel layer.

A gate insulating layer may be formed on the channel layer, and the channel layer may be formed between the drain electrode and the source electrode.

The drain electrode and the source electrode may be formed by locally reducing the graphene oxide thin film layer.

The gate electrode may be formed by depositing a metal on the graphene oxide thin film layer.

According to another aspect of the present invention, there is provided a method of manufacturing a graphene-based carbon based electronic device,

Forming a graphene oxide thin film layer on the substrate; Providing a mask on the graphene oxide thin film layer, and irradiating and patterning the laser; And removing the mask, wherein the graphene oxide thin film layer may be a locally reduced graphene oxide by irradiating a laser.

In one preferred example, the laser may be an excimer laser.

As described above, the graphene-based carbon based electronic device according to the present invention induces local reduction of the graphene oxide thin film layer by irradiating laser on one side of the graphene oxide thin film layer, so that the patterning process is not necessary, There is an advantage.

Further, as the graphene oxide thin film layer according to the present invention is locally reduced, the resistance is reduced and the transparency is improved as compared with the prior art, and the graphene carbon-based electronic device can be simultaneously manufactured on a single substrate.

In addition, according to the present invention, an integrated circuit can be implemented by applying a roll-to-roll process to a flexible substrate in a room temperature process, which is advantageous in mass production.

FIG. 1 is a cross-sectional view of a transistor, which is one of graphene-based carbon-based electronic devices according to a preferred embodiment of the present invention;
2 is a schematic view illustrating reduction of graphene oxide to graphene using an excimer laser according to an embodiment of the present invention;
3 is a flowchart illustrating a method of manufacturing a graphene carbon-based electronic device according to an embodiment of the present invention;
4 is a schematic view illustrating a process of a carbon-based device using a roll-to-roll process according to a preferred embodiment of the present invention;
5 is a schematic diagram showing a fabrication conceptual diagram of a graphene bottom gate FET (field effect transistor) according to a preferred embodiment of the present invention;
6 is a cross-sectional view illustrating an example of a large-area carbon-layer-based integrated device according to a preferred embodiment of the present invention;
7 is a graph showing the sheet resistance of Experimental Example 1 according to the present invention;
8 is a graph showing the transparency of Experimental Example 1 according to the present invention.

Hereinafter, the present invention will be described in more detail with reference to examples and the like, but the following examples are intended to illustrate the present invention, and the scope of the present invention is not limited thereto.

The present invention provides a graphene based carbon electronic device.

As one preferred example, a substrate; A graphene oxide thin film layer formed on the substrate; A gate insulating layer formed on the graphene oxide thin film layer; And a gate electrode formed on the insulating layer, wherein the graphene oxide thin film layer can be locally reduced by irradiating a laser on one surface thereof.

1 is a cross-sectional view of a graphene carbon-based electronic device according to an embodiment of the present invention.

1, the graphene carbon-based electronic device of the present invention comprises a substrate 10, a drain electrode 21 and a source electrode 22 respectively formed on the substrate 10, a drain electrode 21 A gate insulating layer 40 formed on the channel layer 30 and a gate electrode 50 formed on the gate insulating layer 40. The gate electrode 50 is formed on the channel layer 30, .

As described above, the graphene-based carbon based electronic device including the graphene oxide thin film layer 20 according to the present invention excludes a subsequent patterning step by irradiating laser on one surface of the graphene oxide thin film layer 20 to induce local reduction .

Further, the graphene carbon-based electronic device according to the present invention has a low sheet resistance and excellent transparency characteristics, and can simultaneously manufacture a capacitor, a source / drain electrode, and the like on a single substrate.

For reference, an electronic element in the present invention should be understood as a concept that refers to various devices including a memory element, a detection element, a diode, a transistor, a light emitting element, an integrated circuit or the like, or a part of these devices.

The substrate 10 may be made of metal, glass, resin or the like. The substrate 10 may be made of silicon, silicon carbide, gallium arsenide, spinel, indium phosphide, gallium phosphide, aluminum gallium nitride, , Aluminum nitride, zinc oxide, magnesium oxide, aluminum oxide, titanium oxide, sapphire, quartz, pyrex, and the like.

The graphene oxide thin film layer 20 is formed on the substrate 10 by spraying and coating a graphene oxide solution on the substrate 10, have. The graphene oxide solution can be formed through a heat treatment process after the graphite powder is oxidized by adding an acid such as sulfuric acid and then UV and O 2 plasma treatment can be performed, no.

The coating may be applied by any one of spin coating, electrospray coating, screen coating, offset printing, inkjet printing, spraying, pad printing, knife coating, kiss coating, gravure coating, brushing, ultrasonic micronized spray coating, But is not limited thereto.

The solvent of the graphene oxide solution is at least one selected from the group consisting of water, acetone, methyl ethyl ketone, methyl alcohol, ethyl alcohol, isopropyl alcohol, butyl alcohol, ethylene glycol, ethylene glycol, polyethylene glycol, tetrahydrofuran, , Which is either of dimethylacetamide, N-methyl-2-pyrrolidone, hexane, cyclohexanone, toluene, chloroform, distilled water, diclobenzene, dimethylbenzene, trimethylbenzene, pyridine, methylnaphthalene, nitromethane or acrylonitrile It can be one.

In order to uniformly disperse the graphene oxide solution of the present invention, a nonpolar solvent may be added. Examples of the solvent include acetone, methyl ethyl ketone, methyl alcohol, ethyl alcohol, isopropyl alcohol, butyl alcohol, ethylene glycol But are not limited to, ethylene glycol, ethylene glycol, ethylene glycol, tetrahydrofuran, dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, hexane, cyclohexanone, toluene, It is preferably any one of dimethylbenzene, trimethylbenzene, pyridine, methylnaphthalene, nitromethane, acrylonitrile, octadecylamine, aniline, dimethylsulfoxide, methylene chloride, diethylene glycol methyl ethyl ether and ethyl acetate. Such a non-polar solvent not only uniformly disperses the graphene oxide but also has an effect of reducing the surface roughness.

In order to localize the graphene oxide thin film layer 20 of the present invention (20), an excimer laser can be used.

FIG. 2 is a schematic view illustrating reduction of graphene oxide to graphene using an excimer laser according to an embodiment of the present invention. Referring to FIG.

Specifically, referring to FIG. 2, by irradiating graphene oxide with pulses using an excimer laser, only the region irradiated with the laser is reduced to graphene while the -O-, -OH or -COOH functional group is removed. As described above, since only the region irradiated with the excimer laser is locally reduced to graphene, the graphene local reduction and patterning process can be performed at the same time.

At this time, the excimer laser can be irradiated using the S / D mask or the channel mask, and the subsequent patterning process can be omitted by directly patterning using the S / D mask or the channel mask.

In some cases, when the excimer laser is irradiated, it can be converged and irradiated using an objective lens or the like, irradiated at room temperature, and irradiated while heating the substrate to a temperature of 200 ° C or less in consideration of device characteristics.

In one preferred example, the pulse width of the excimer laser may be 10 or more and 50 ns or less, and when the pulse width exceeds 50 nS, heat energy may be excessively supplied to cause damage to the surface. Conversely, Can not be achieved, which is not preferable.

In another preferred example, the energy irradiated by the excimer laser may be 100 to 1000 mJ or less. When the energy of the laser is less than 100 mJ, the reaction temperature is lowered and sufficient reduction is not caused. On the other hand, when the energy is more than 1000 mJ, the surface of the graphene oxide thin film layer may be damaged, so that the desired effect of the present invention can not be expected .

The graphene oxide thin film layer 20 formed on the substrate 10 has a structure in which the drain electrode 21, the source electrode 22 and the channel layer 30 are integrally formed on the same surface on the substrate 10 And the drain electrode 21 and the source electrode 22 may be formed of locally reduced graphene by irradiating the excimer laser.

The channel layer 30 may be formed by partially reducing the graphene oxide thin film layer 20 between the drain electrode 21 and the source electrode 22, And may be formed by depositing a metal (13) on the pin oxide thin film layer (20).

The insulating layer 40 is a region where the laser is not irradiated and the lower portion of the metal 13 is oxidized by chemical bonding while the metal 13 is being deposited on the graphene oxide thin film layer 20, And may be oxidized and formed by a thermal process.

In one preferred embodiment of the present invention, the graphene carbon-based electronic device can be applied to an integrated device such as a thin film transistor, a gas sensor, a memory, and a capacitor.

The present invention also provides a method of manufacturing a graphene based carbon electronic device.

In one preferred embodiment, there is provided a method comprising: forming a graphene oxide thin film layer on a substrate; Providing a mask on the graphene oxide thin film layer, and irradiating and patterning the laser; And removing the mask, wherein the graphene oxide thin film layer may be a locally reduced graphene oxide by irradiating a laser. Preferably, irradiation with an excimer laser can be performed.

3 is a flowchart illustrating a method of manufacturing a graphene carbon-based electronic device according to an embodiment of the present invention.

As shown in FIG. 3, the method of fabricating a graphene-based carbon based electronic device of the present invention includes forming a graphene oxide thin film layer on a substrate (S310); Providing a mask on the graphene oxide thin film layer, and irradiating and patterning the laser (S320); And removing the mask (S330) to form a graphene carbon-based electronic device (S340).

The series of processes may be applied to a roll-to-roll type process for implementing a graphene-based carbon-based integrated device.

4 is a schematic view illustrating a process of a carbon-based device using a roll-to-roll process according to a preferred embodiment of the present invention.

Referring to FIG. 4, a supply unit 410 for continuously supplying a substrate; A graphener 420 for spraying and coating the graphene oxide solution on the surface of the supplied substrate; A laser irradiation unit 430 for irradiating a laser on one surface of the graphene oxide thin film passed through the graphene synthesis unit; And a recovery unit 440 for recovering the irradiated graphene oxide thin film.

The graphene composite 420 may spray and coat the graphene oxide solution on the substrate to produce a graphene oxide thin film layer, which may be dried and then heat treated by heat treatment. In addition, the laser irradiation unit 430 may include a direct patterning process using an S / D mask, a channel mask, or the like.

Furthermore, the FET of the integrated device of the present invention can be implemented by continuously irradiating laser beams using a S / D mask and a channel mask, and FIG. 5 is a conceptual view illustrating the fabrication of an organic FET according to an embodiment of the present invention. It is a schematic diagram.

5, a graphene oxide thin film layer 520 is formed on a SiO 2 / Si substrate 510 and an excimer laser 540 is formed on the graphene oxide thin film layer 520 using a S / D mask 531. [ ). When the number of laser pulses is more than 10 times, a high reduction graphene oxide (HrGO) region 551 is formed and the S / D mask is removed. Next, the channel mask 532 may be used to form a region 552 of reduced reduction graphene oxide (LrGO) by irradiating less than five laser pulses. That is, the laser can be continuously irradiated using the S / D mask 531 and the channel mask 532 to implement the integrated element FET.

As described above, the graphene carbon-based electronic device according to the present invention can be manufactured by directly depositing a graphene carbon-based electronic device on a single substrate, for example, a gate electrode, a source / drain electrode And the like can be implemented at the same time. This is shown in Fig.

6 is a cross-sectional view illustrating an example of a large area carbon layer-based integrated device.

6, when the excimer laser is irradiated on the graphene oxide thin film layer using a S / D mask, a channel mask, or the like, the conductive regions 610, 640, 650, and 670 (ρ < 1 Ω / cm) and the semiconductive regions 620 and 660 (1 <ρ <10 3 Ω / cm) can be realized at the same time. In addition, as described above, the region where the laser is not irradiated can also be realized as the insulating region 630 (?? 10 3 ? / Cm). The conductive regions 610, 640, 650, and 670 may be utilized as the electrodes 640, 650, and 670 of the integrated device, and the semiconductor region may include an active layer of a channel memory of a field effect transistor (FET) Layer 660 and the like.

In addition, the advantage of eliminating the patterning and removal of PR (photo-resistor) and the O 2 plasma etching process for removing unwanted graphene oxide thin film layer in realizing the graphene carbon based integrated device according to the present invention have.

{Example}

[Example 1]

A graphene oxide solution was prepared, and 5 mg / ml was sprayed onto a transparent substrate using a spin coating method and coated to form a 30 nm thick graphene oxide thin film layer.

The prepared graphene oxide thin film layer was irradiated with a laser to reduce only a desired region to graphene. At this time, the pulse width was 20 ns, the energy per pulse was 300 mJ, the beam width was 5 × 15 mm 2 , the wavelength was 248 nm, and the number of laser pulses was 1.

[Example 2]

In Example 1, irradiation was carried out in the same manner as in Example 1, except that the number of laser pulses was 3.

[Example 3]

In Example 1, irradiation was carried out in the same manner as in Example 1, except that the number of laser pulses was 5.

[Example 4]

In Example 1, irradiation was carried out in the same manner as in Example 1, except that the number of laser pulses was 10.

[Comparative Example 1]

The same method as in Example 1 was used except that the graphene oxide thin film layer in Example 1 was not irradiated with laser (pritine GO).

[Experimental Example 1: Measurement of sheet resistance (Rs) and transparency according to laser irradiation]

The sheet resistance and transparency according to the number of laser pulses were measured according to Examples 1 to 4 and Comparative Example 1, and the results are shown in FIGS. 7 and 8. FIG.

FIG. 7 is a graph showing the sheet resistance of Experimental Example 1, and FIG. 8 is a graph showing transparency of Experimental Example 1. FIG.

Referring to FIG. 7, it was confirmed that the sheet resistance decreases as the number of laser pulses increases (Example 1 to Example 4). In addition, the sheet resistance value of Example 1 was somewhat higher than that of Example 4, but it was confirmed that Example 1 was also partially reduced, and Example 4 was completely reduced (high reduction).

Since the sheet resistance is represented by the resistivity per unit thickness of the thin film, the specific resistance of Comparative Example 1 is 3.0 x 10 3 ? / Cm, the specific resistance of Example 4 is 9.09 x 10 -1 ? / Cm, It was confirmed that the sheet resistance value was reduced by about 10 5 compared with the sheet resistance value of Comparative Example 1. This means that the sheet resistance characteristics are improved.

On the other hand, there is a correlation between the sheet resistance and transparency. Referring to FIG. 8, transparency is also improved. Specifically, at a wavelength of 550 nm, the transparency of Comparative Example 1 is increased to 73, the transparency of Example 2 is increased to 80, and the transparency of Example 4 is increased to 92.

That is, the graphene oxide thin film layer produced according to the present invention can be applied to a flexible display, an integrated circuit, etc. as the number of laser pulses increases, the sheet resistance decreases and the transparency increases.

The embodiments of the present invention described above and shown in the drawings should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art will be able to modify the technical idea of the present invention in various forms. Accordingly, such improvements and modifications will fall within the scope of the present invention as long as they are obvious to those skilled in the art.

10: substrate
12: Mask
13: Metal
20: graphene oxide thin film layer
21: drain electrode
22: source electrode
30: channel layer
40: Insulating layer
50: gate electrode

Claims (9)

Board;
A graphene oxide thin film layer formed on the substrate;
A gate insulating layer formed on the graphene oxide thin film layer; And
And a gate electrode formed on the insulating layer,
Wherein the graphene oxide thin film layer is subjected to local reduction of graphene oxide by irradiating laser on one surface thereof. The method according to claim 1,
Wherein the laser is an excimer laser. The method according to claim 1,
Wherein the graphene oxide thin film layer has a drain electrode, a source electrode, and a channel layer integrally formed on the same surface on the substrate. The method of claim 3,
And a gate insulating layer is formed on the channel layer. The method of claim 3,
Wherein the channel layer is formed between the drain electrode and the source electrode. 6. The method of claim 5,
Wherein the drain electrode and the source electrode are formed by local reduction of the graphene oxide thin film layer. The method according to claim 1,
Wherein the gate electrode is formed by depositing a metal on the graphene oxide thin film layer. Forming a graphene oxide thin film layer on the substrate;
Providing a mask on the graphene oxide thin film layer, and irradiating and patterning the laser; And
Removing the mask;
, &Lt; / RTI &
Wherein the graphene oxide thin film layer is irradiated with a laser so that the graphene oxide is locally reduced. 9. The method of claim 8,
Wherein the laser is an excimer laser. &Lt; RTI ID = 0.0 &gt; 15. &lt; / RTI &gt;

KR1020130024729A 2013-03-07 2013-03-07 Carbon Based Electronic Device and Its Manufacturing Methods with Locally Reduced Graphene Oxide KR102039748B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020130024729A KR102039748B1 (en) 2013-03-07 2013-03-07 Carbon Based Electronic Device and Its Manufacturing Methods with Locally Reduced Graphene Oxide
PCT/KR2014/001877 WO2014137180A1 (en) 2013-03-07 2014-03-07 Carbon based electronic device using partial reduction of graphene oxide and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130024729A KR102039748B1 (en) 2013-03-07 2013-03-07 Carbon Based Electronic Device and Its Manufacturing Methods with Locally Reduced Graphene Oxide

Publications (2)

Publication Number Publication Date
KR20140110431A true KR20140110431A (en) 2014-09-17
KR102039748B1 KR102039748B1 (en) 2019-11-01

Family

ID=51491625

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130024729A KR102039748B1 (en) 2013-03-07 2013-03-07 Carbon Based Electronic Device and Its Manufacturing Methods with Locally Reduced Graphene Oxide

Country Status (2)

Country Link
KR (1) KR102039748B1 (en)
WO (1) WO2014137180A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190000959A (en) * 2017-06-23 2019-01-04 엘지전자 주식회사 Manufacturing method of graphene membrane

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2997796C (en) * 2015-09-08 2024-01-23 Grafoid Inc. Process for coating a substrate with a carbon-based material
CN106842725B (en) * 2017-03-14 2019-11-05 深圳市华星光电技术有限公司 Graphene electrodes preparation method and liquid crystal display panel
CN111477637A (en) * 2020-04-26 2020-07-31 Tcl华星光电技术有限公司 Display panel and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3318384B2 (en) * 1993-02-05 2002-08-26 株式会社半導体エネルギー研究所 Thin film transistor and manufacturing method thereof
KR20110064164A (en) 2009-12-07 2011-06-15 서울대학교산학협력단 Method of forming graphene layer using chemical vapor deposition
KR20110132246A (en) * 2010-06-01 2011-12-07 소니 주식회사 Field effect transistor manufacturing method, field effect transistor, and semiconductor graphene oxide manufacturing method
KR20120033148A (en) * 2010-09-29 2012-04-06 중앙대학교 산학협력단 Patterning method of graphene using laser

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008048295A2 (en) * 2005-11-18 2008-04-24 Northwestern University Stable dispersions of polymer-coated graphitic nanoplatelets
US9428394B2 (en) * 2009-05-22 2016-08-30 William Marsh Rice University Highly oxidized graphene oxide and methods for production thereof
KR101172625B1 (en) * 2011-01-21 2012-08-08 한국과학기술원 Method for manufacturing semiconductor device, graphene semiconductor and transistor manufactured by the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3318384B2 (en) * 1993-02-05 2002-08-26 株式会社半導体エネルギー研究所 Thin film transistor and manufacturing method thereof
KR20110064164A (en) 2009-12-07 2011-06-15 서울대학교산학협력단 Method of forming graphene layer using chemical vapor deposition
KR20110132246A (en) * 2010-06-01 2011-12-07 소니 주식회사 Field effect transistor manufacturing method, field effect transistor, and semiconductor graphene oxide manufacturing method
KR20120033148A (en) * 2010-09-29 2012-04-06 중앙대학교 산학협력단 Patterning method of graphene using laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190000959A (en) * 2017-06-23 2019-01-04 엘지전자 주식회사 Manufacturing method of graphene membrane

Also Published As

Publication number Publication date
KR102039748B1 (en) 2019-11-01
WO2014137180A1 (en) 2014-09-12

Similar Documents

Publication Publication Date Title
Kang et al. Inking elastomeric stamps with micro‐patterned, single layer graphene to create high‐performance OFETs
Wang et al. Clean-lifting transfer of large-area residual-free graphene films
TWI588285B (en) Process for forming carbon film or inorganic material film on substrate
Singh et al. Molecular n-doping of chemical vapor deposition grown graphene
Liu et al. Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors
US10181516B2 (en) Graphene FET with graphitic interface layer at contacts
KR101611410B1 (en) Manufacturing method of graphene
Jeong et al. Improved transfer of chemical-vapor-deposited graphene through modification of intermolecular interactions and solubility of poly (methylmethacrylate) layers
Jiang et al. Ultrathin organic single crystals: fabrication, field-effect transistors and thickness dependence of charge carrier mobility
TWI526559B (en) Process for forming carbon film or inorganic material film on substrate by physical vapor deposition
JP2012235129A (en) Thin film transistor and manufacturing method of top gate type thin film transistor
JP5578639B2 (en) Graphite film manufacturing method
US9929237B2 (en) Method for manufacturing graphine film electronic device
CN107217242B (en) Surface modification method for dielectric substrate of electronic device
KR102039748B1 (en) Carbon Based Electronic Device and Its Manufacturing Methods with Locally Reduced Graphene Oxide
van der Laan et al. Water-mediated and instantaneous transfer of graphene grown at 220 C enabled by a plasma
Cabrero-Vilatela et al. Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer
US20160221830A1 (en) Method of producing graphene film
Park et al. Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO
Zhu et al. Direct transfer of graphene and application in low-voltage hybrid transistors
Hui et al. n-and p-Type modulation of ZnO nanomesh coated graphene field effect transistors
Liu et al. Laser-induced growth of large-area epitaxial graphene with low sheet resistance on 4H-SiC (0001)
Li et al. Room‐temperature printing of ultrathin quasi‐2D GaN semiconductor via liquid metal gallium surface confined nitridation reaction
Pham et al. Direct transfer of the CVD-grown graphene on copper foils on SiO2 substrate under supercritical CO2 assisted-cleaning technique
Heya et al. Properties of pentacene-based films prepared using a heated tungsten mesh

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant