KR20140105157A

KR20140105157A - Selective atomic layer deposition apparatus and method

Info

Publication number: KR20140105157A
Application number: KR20130019035A
Authority: KR
Inventors: 심준형
Original assignee: 고려대학교 산학협력단
Priority date: 2013-02-22
Filing date: 2013-02-22
Publication date: 2014-09-01

Abstract

Disclosed are a method and a device for selectively depositing an atomic layer. The present invention provides the method for selectively depositing the atomic layer including a step for forming patterns of conductive materials on a substrate; a step for generating resistive heat by applying currents to the patterns; and a step of depositing a thin film on the patterns or on a region except for the patterns by injecting source gas of a precursor and a reaction body. The region where the thin film is deposited is determined by the temperature of the patterns affected by the resistive heat.

Description

[0001] Selective atomic layer deposition apparatus and method [0002]

The present invention relates to a selective atomic layer deposition method and apparatus, and more particularly, to a method and apparatus for forming or not forming a thin film through an atomic layer deposition process only in a desired region through temperature control.

Atomic layer deposition (ALD) is a technique for depositing a source of vaporized material through a chemical reaction onto a substrate, which is a type of chemical vapor deposition (CVD).

Atomic layer deposition is a method in which each reactant separated by an inert gas (Ar, N _2, etc.) is supplied to a substrate to deposit one atomic layer, and deposition is repeatedly performed until a desired thickness is deposited 1).

More specifically, atomic layer deposition consists of the following steps.

1. Precursor adsorption and purge: adsorbs the precursor containing the substance to be deposited on the substrate surface.

In this process, as a self-limiting adsorption process proceeds by the ligands of the precursor, adsorption does not proceed any more after a certain amount of molecules are adsorbed.

The precursors adsorbed between the precursors are easily adsorbed because they have weak binding force. On the other hand, since the precursor adsorbed on the substrate is chemically adsorbed, the precursors that are physically adsorbed on the next stage, And the chemically adsorbed precursor remains adsorbed. This difference in chemisorption and physical adsorption makes it possible to control the atomic layer unit.

2. Reactant Reaction and Purge: When a reactant is supplied to make a desired thin film, the reactant and the precursor adsorbed on the substrate undergo surface chemical reaction with each other to form a film, and a physically adsorbed reactant and a byproduct Is removed in the subsequent purge process and grown as much as the atomic layer. Such a process consists of one cycle, and the deposition rate is usually below the atomic layer per cycle due to the size effect of the ligand.

In this way, the atomic layer deposition utilizes the reaction on the surface and the alternate injection of the materials, so there is a disadvantage that the deposition rate is slow. However, since the deposition proceeds through the surface reaction, Selection of sieves enables high quality thin film deposition at relatively low temperatures

As noted above, ALD can deposit up to one atom layer per cycle to open the valve and provide a source of material. The thickness of the film deposited per cycle is constant regardless of the source supply direction or the shape of the substrate. This feature helps to deposit uniform thin films along complicated three-dimensional shapes.

By changing the ALD source material, thin films can be deposited differently in different atomic layers.

The ALD process can be deposited at a relatively low temperature compared to CVD and is only processable within the appropriate ALD temperature range (ALD zone). When the temperature is outside the temperature range, the deposition rate is remarkably lowered or increased as shown in FIG. 2 to FIG.

Korean Patent Laid-Open No. 10-2009-0013515 (titled atomic layer deposition method capable of low temperature process) discloses a method capable of selective deposition by irradiating a predetermined portion of a wafer with a laser beam.

However, according to this conventional technique, since expensive laser equipment is required and the laser beam is irradiated onto the wafer, selective deposition can not be performed for patterning of nanoscale.

The present invention proposes a selective atomic layer deposition method and apparatus in which expensive equipment is not required in order to solve the problems of the prior art as described above.

According to a preferred embodiment of the present invention, there is provided a selective atomic layer deposition method comprising: forming a pattern with a conductor material on a substrate; Applying a current to the pattern to generate resistance heat; And depositing a thin film on the pattern or in an area other than the pattern by implanting a source gas of the precursor and the reactant, wherein the deposition area of the thin film is determined by the temperature of the pattern through the resistive heat A selective atomic layer deposition method is provided.

The conductor material may include at least one of a metal, a semiconductor, a carbon compound, a graphine, a high temperature conductive polymer, a conductive nanoparticle, and a carbon nanotube.

The resistance heat according to application of the current may be determined by the type of the source gas.

According to another aspect of the present invention, there is provided a selective atomic layer deposition apparatus comprising: a chamber in which a vacuum state is maintained; A current applicator located in the chamber and applying a current to a pattern formed of a conductor material; And a source gas injecting portion for injecting a precursor and a reactant source gas for forming a thin film on a pattern in the chamber or in a region other than the pattern, wherein the deposition region of the thin film is formed by a temperature of the pattern through the resistance heat A selective atomic layer deposition apparatus is provided.

According to the present invention, since the patterned conductor material is locally heated using resistance heat, selective atomic layer deposition can be performed without expensive equipment such as a laser.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 illustrates the general principles of an atomic layer deposition process.
2 shows ALD deposition rates according to substrate temperature using a Zr source;
3 illustrates ALD deposition rates with substrate temperature using an Er source.
4 is a flow diagram of a selective atomic layer deposition process in accordance with a preferred embodiment of the present invention.
5 is a schematic diagram of a selective atomic layer deposition process according to a preferred embodiment of the present invention.
FIG. 6 is a schematic view of a selective atomic layer deposition process according to another preferred embodiment of the present invention. FIG.
7 is a view showing a configuration of a selective atomic layer deposition apparatus according to the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In order to facilitate a thorough understanding of the present invention, the same reference numerals are used for the same means regardless of the number of the drawings.

FIG. 4 is a flowchart of a selective atomic layer deposition process according to a preferred embodiment of the present invention, and FIG. 5 is a schematic diagram of a selective atomic layer deposition process.

Referring to FIG. 4, a pattern 502 is formed on a substrate 500 with a predetermined patterning material (step 400).

The patterning material according to the present invention may be formed of a conductive material, and may include metals, semiconductors, carbon compounds, graphine, high-temperature conductive polymers, and the like.

Furthermore, a patterning material may be used for a zero-dimensional or one-dimensional material such as a nanoparticle or a carbon nanotube.

Thereafter, a current is applied to the pattern 502 to generate resistance heat (step 402).

The magnitude of the current according to the present invention can be predetermined according to the kind of the source gas used in the atomic layer deposition process.

For example, as shown in FIG. 2, in the case of Zr (Zirconium) source gas, the deposition rate increases in the high temperature region. In this case, if selective deposition is desired on the pattern while using the Zr source gas, resistance heat should be generated at an appropriate ALD temperature of 250-350 ° C only in the pattern portion, and the remaining portion should be 200 Lt; 0 > C or less.

On the other hand, as shown in FIG. 3, since Er (Erbium) source gas has a lower deposition rate in a high temperature region, a current may be applied to the pattern 502 to generate a resistance heat of 150 to 350 ° C. Preferably, The pattern portion can be resistively heated to a temperature of 350 DEG C or higher to prevent selective deposition.

As described above, a resistive heat is generated in the pattern 502, and a thin film is deposited through an atomic layer deposition process (step 404).

5 (c), the thin film 504 can be selectively deposited on the pattern 502 according to the temperature of the pattern 502, and the pattern 502 can be selectively deposited on the pattern 502 as shown in FIG. 5 (d) The thin film 504 can be deposited on the remaining region except for the region 504.

According to the present invention, as shown in FIG. 6A, a zero-dimensional or one-dimensional carbon nanotube 600 is patterned and a current is applied as shown in FIG. 6 (b) And then the thin film can be deposited on the carbon nanotube 600 or in the region except the carbon nanotube 600 through the atomic layer deposition process.

FIG. 7 is a view showing a configuration of an atomic layer deposition apparatus according to a preferred embodiment of the present invention.

7, the atomic layer deposition apparatus according to the present invention may include a chamber 700, a current application unit 702, and a source gas injection unit 704.

Although not shown in FIG. 7, the atomic layer deposition apparatus according to the present invention may include a pump for maintaining the inside of the chamber 700 in a vacuum state, and a structure for removing by-products due to the reaction.

The inside of the chamber 700 is kept in a vacuum state by a pump, and a substrate patterned with a conductor material is disposed in the chamber 700 prior to the thin film formation.

The current applying unit 702 according to the present invention applies current to the patterned conductor material on the substrate to generate resistance heat.

The source gas of the precursor or the reactant is injected by the source gas injecting portion 704 in the state where the resistance heat is generated as described above, and a thin film is formed on the pattern or in a region except the pattern.

As described above, the deposition area of the thin film can be determined according to the temperature of the pattern through the resistance heat.

It will be apparent to those skilled in the relevant art that various modifications, additions and substitutions are possible, without departing from the spirit and scope of the invention as defined by the appended claims. The appended claims are to be considered as falling within the scope of the following claims.

Claims

As a selective atomic layer deposition method,
Forming a pattern on the substrate with a conductor material;
Applying a current to the pattern to generate resistance heat; And
Wherein the source gas of the precursor and the reactant is injected to deposit a thin film on the pattern or in an area excluding the pattern,
Wherein the deposition region of the thin film is determined by the temperature of the pattern through the resistance heat.

The method according to claim 1,
Wherein the conductor material comprises at least one of a metal, a semiconductor, a carbon compound, a graphine, a high temperature conductive polymer, a conductive nanoparticle, and a carbon nanotube.

The method according to claim 1,
Wherein the resistance heat of the current application is determined by the type of the source gas.

A selective atomic layer deposition apparatus,
A chamber in which a vacuum state is maintained;
A current applicator located in the chamber and applying a current to a pattern formed of a conductor material; And
And a source gas injection unit for injecting a precursor and a reactant source gas for forming a thin film on a pattern in the chamber or in an area other than the pattern,
Wherein the deposition region of the thin film is determined by the temperature of the pattern through the resistance heat.

5. The method of claim 4,
Wherein the conductor material comprises at least one of a metal, a semiconductor, a carbon compound, a graphine, a high temperature conductive polymer, a conductive nanoparticle, and a carbon nanotube.

5. The method of claim 4,
Wherein the resistance heat according to the application of the current is determined by the type of the source gas.