KR20140094352A - Method of forming pattern having honeycomb type in semiconductor device - Google Patents

Method of forming pattern having honeycomb type in semiconductor device Download PDF

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Publication number
KR20140094352A
KR20140094352A KR1020130007088A KR20130007088A KR20140094352A KR 20140094352 A KR20140094352 A KR 20140094352A KR 1020130007088 A KR1020130007088 A KR 1020130007088A KR 20130007088 A KR20130007088 A KR 20130007088A KR 20140094352 A KR20140094352 A KR 20140094352A
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KR
South Korea
Prior art keywords
mask
pattern
patterns
honeycomb
layer
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KR1020130007088A
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Korean (ko)
Inventor
김동현
황찬승
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삼성전자주식회사
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Priority to KR1020130007088A priority Critical patent/KR20140094352A/en
Publication of KR20140094352A publication Critical patent/KR20140094352A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

A method for forming a pattern of a semiconductor device comprises a step of forming a material layer to be patterned on a substrate and a step of forming a standard mask pattern and six outer mask patterns on the material layer to be patterned in a honeycomb form in a first direction to a sixth direction at intervals of 60 degrees around a standard pattern by using a picture etching process. Six inner mask patterns are formed on the triangular inner center, which is formed in the outer mask patterns and is made when the two outer mask patterns which are adjacent to the standard mask pattern are connected with a virtual line, in the honeycomb form. A material pattern of the honeycomb form is formed by patterning the material layer using the standard mask pattern, the outer mask patterns of the honeycomb type, and the inner mask patterns.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a honeycomb-

Technical aspects of the present invention relate to a method of manufacturing a semiconductor device, and more particularly, to a method of forming a pattern of a honeycomb-shaped semiconductor device.

As semiconductor devices are integrated, there is a growing need to form high density patterns in a limited area. In particular, due to the limitations of process technology, such as the technical limitations of photolithographic processes and etch processes, it is necessary to form a pattern with a high density at a limited area.

SUMMARY OF THE INVENTION The present invention provides a method for forming a pattern of a honeycomb-shaped semiconductor element which is advantageous for forming a high-density pattern in a limited area.

According to an aspect of the present invention, there is provided a method of forming a pattern of a honeycomb-shaped semiconductor device, including: forming a material layer to be patterned on a substrate; Forming six external mask patterns in a honeycomb shape in a first direction to a sixth direction at intervals of 60 degrees around a reference mask pattern and a reference mask pattern using a photolithography process, Forming six internal mask patterns in a honeycomb shape in a central portion of a triangle formed when two external mask patterns adjacent to the reference mask pattern are connected by a virtual line, By patterning the material layer using mask patterns and inner mask patterns, And forming a pattern.

In one embodiment of the inventive concept, forming the honeycomb-shaped inner mask patterns comprises:

A plurality of spacers are formed on the outer wall of the outer mask patterns so as to contact between the reference mask pattern and the outer mask patterns and between the outer mask patterns and the two outer mask patterns located adjacent to the reference mask pattern are formed as virtual lines Forming a hole in the inner center of the triangle formed at the time of connection, filling the hole with a metal material to form a metal mask layer, removing the spacers, and reflowing the metal mask layer And forming mask patterns in a honeycomb form.

In an embodiment of the technical concept of the present invention, the reference mask pattern, the outer mask patterns, and the inner mask patterns may have the same horizontal cross-sectional shape.

In one embodiment of the present invention, the reference mask pattern and the outer mask patterns are formed of a hard mask layer, and the inner mask patterns are formed of a material different from the reference mask pattern and the outer mask patterns, can do.

According to another aspect of the present invention, there is provided a method of patterning a semiconductor device, comprising: forming a layer of material to be patterned on a substrate; forming a plurality of mask patterns on the layer of material to be patterned using a photolithography process; Forming first spacers on the outer wall of the mask patterns; forming second spacers on the outer wall of the first spacers, wherein a plurality of adjacent second spacers are in contact with each other; Forming a hole magnetically between second spacers formed on the outer wall of the three mask patterns; embedding a metal mask layer in the hole formed between the outer walls of the adjacent three mask patterns; Removing the first and second spacers, reflowing the metal mask layer to form metal mask patterns in a first honeycomb form Forming a honeycomb-shaped material pattern by etching the material layer using first and second honeycomb-shaped mask patterns and metal mask patterns.

In one embodiment of the technical concept of the present invention, the mask patterns may be formed in a cylindrical columnar shape.

In one embodiment of the present invention, the metal mask layer buried in the holes formed between the outer walls of the adjacent three mask patterns is formed into a triangular prism shape, and is formed into a triangular prism shape using surface tension through reflow. May be changed into a cylindrical columnar shape.

In one embodiment of the present invention, the step of forming a material pattern may include forming a honeycomb-shaped columnar material pattern by directly etching the material layer using the honeycomb-shaped mask patterns and the metal mask patterns as an etching mask . ≪ / RTI >

In one embodiment of the present invention, the step of forming a material pattern comprises the steps of: forming a plurality of layers of material; patterning the honeycomb-shaped mask patterns and the metal mask patterns as an etch mask Etching the uppermost material layer to form first material patterns in the form of honeycombs; removing the honeycomb-shaped mask patterns and metal mask patterns; Etching the first material pattern to form hole patterns in the additional mask pattern; etching the material layer under the uppermost material layer using the additional mask pattern having hole patterns as an etching mask, Shaped second material pattern of the first conductivity type.

In an embodiment of the technical aspect of the present invention, the additional mask pattern having hole patterns comprises the steps of: forming an additional mask layer between the first material patterns in the form of honeycombs and sufficiently filling over the first material pattern; Exposing the first material pattern by etching the additional mask layer with the photoresist pattern as a mask, and etching the first material pattern. .

The method of forming a honeycomb pattern of a semiconductor device according to the technical idea of the present invention may be a method of forming a honeycomb-shaped external mask pattern at a photolithography apparatus (photolithography apparatus) A honeycomb-shaped inner mask pattern is formed in a self-aligning manner using a reflow process in the outer mask patterns.

Accordingly, the method of forming a honeycomb pattern of a semiconductor device according to the technical idea of the present invention can form an internal mask pattern by a self-aligning method. Therefore, even if a design rule is reduced, a photolithography process and an etching process are easily performed, A pattern of a shape can be easily formed.

BRIEF DESCRIPTION OF THE DRAWINGS A brief description of each drawing is provided to more fully understand the drawings recited in the description of the invention.
1 is a plan view for explaining a honeycomb pattern forming method of a semiconductor device according to an embodiment of the present invention.
FIGS. 2A to 8A and FIGS. 2B to 8B are views illustrating a method of forming a honeycomb pattern of a semiconductor device according to an embodiment of the present invention.
FIGS. 9A and 10A and FIGS. 9B and 10B are views illustrating a method of forming a honeycomb pattern of a semiconductor device according to an embodiment of the present invention.
FIGS. 11A and 12A and FIGS. 11B and 12B are views illustrating a method of forming a honeycomb pattern of a semiconductor device according to an embodiment of the present invention. ,

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same constituent elements in the drawings, and a duplicate description thereof will be omitted.

Embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The present invention is not limited to the following embodiments. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

Although the terms first, second, etc. are used herein to describe various elements, regions, layers, regions and / or elements, these elements, components, regions, layers, regions and / It should not be limited by. These terms do not imply any particular order, top, bottom, or top row, and are used only to distinguish one member, region, region, or element from another member, region, region, or element. Accordingly, the first member, region, region, or element described below may refer to a second member, region, region, or element without departing from the teachings of the present invention. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

Unless otherwise defined, all terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept belongs, including technical terms and scientific terms. In addition, commonly used, predefined terms are to be interpreted as having a meaning consistent with what they mean in the context of the relevant art, and unless otherwise expressly defined, have an overly formal meaning It will be understood that it will not be interpreted.

If certain embodiments are otherwise feasible, the particular process sequence may be performed differently from the sequence described. For example, two processes that are described in succession may be performed substantially concurrently, or may be performed in the reverse order to that described.

In the accompanying drawings, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the present invention should not be construed as limited to any particular shape of the regions shown herein, but should include variations in shape resulting from, for example, manufacturing processes.

1 is a plan view for explaining a honeycomb pattern forming method of a semiconductor device according to an embodiment of the present invention.

Specifically, Fig. 1 is a plan view for explaining a honeycomb-shaped mask pattern for forming a honeycomb pattern (or a material pattern). FIG. 1 (a) is an intermediate structure of a honeycomb-shaped mask pattern, and FIG. 1 (b) is a final structure of a mask pattern through the process of FIG. 1 (a).

1 (a) and 1 (b), a reference mask pattern 12 and a reference mask pattern 12 are formed on a patterned material layer (not shown) Six external mask patterns 14a-14f may be formed in a honeycomb pattern using a photolithography process in six directions.

The reference mask pattern 12 and the external mask patterns 14a-14f may be simultaneously formed using a photolithography process. The reference mask pattern 12 and the external mask patterns 14a to 14f can be formed to be larger than the photographic process limit of the photolithography apparatus (photolithography apparatus) or about the photolithographic process limit. For example, the reference mask pattern 12 and the external mask patterns 14a-14f may be formed larger than the design rule of the semiconductor device.

The reference mask pattern 12 and the external mask patterns 14a-14f may be formed in a cylindrical columnar shape. The reference mask pattern 12 and the external mask patterns 14a-14f may be formed of a hard mask layer, for example, an amorphous carbon layer or a silicon nitride layer. The reference mask pattern 12 and the external mask patterns 14a-14f may be referred to as mask patterns.

The external mask patterns 14a-14f are formed so as to contact between the reference mask pattern 12 and the external mask patterns 14a-14f and the external mask patterns 14a-14f as shown in FIG. 1 (a) A plurality of spacers 22 are formed on the outer walls of the first and second electrodes 14f and 14f. The spacers 22 include first spacers 18 formed on the outer wall of the reference mask pattern 12 and outer mask patterns 14a through 14f and second spacers 18 formed on the outer wall of the first spacers 18. [ Spacers 20 may be used. The second spacers 20 may be formed to be in contact with each other.

When connecting two external mask patterns 14a-14f adjacent to the reference mask pattern 12 by virtue of the formation of the spacers 22 as shown in FIG. 1 (a) A hole 24 can be formed in a self-aligning manner in the inner center of the triangle to be made.

The metal mask layer 26 can be formed by filling the hole 24 with a metal material as shown in Fig. The metal mask layer may be formed in a triangular prism shape. The metal mask layer 26 may be indium (In) or tin (Sn) having a melting point of 500 DEG C or less.

After the structure is formed as shown in FIG. 1 (a), the spacers 22 are removed. Thereby, the cylindrical mask-shaped reference mask pattern 12, the external mask patterns 14a to 14f, and the triangular columnar metal mask layer 26 are left.

Subsequently, in the case of reflowing the metal mask layer 26 in the form of a triangular prism, the internal mask patterns 28a to 28f in the form of cylindrical columns can be formed in a honeycomb shape as shown in FIG. 1 (b) have. The metal mask layer 26 in the form of a triangular prism can be changed into a cylindrical column shape by utilizing the surface tension of the triangular prism-shaped metal mask layer 26 through reflow. Accordingly, the reference mask pattern 12, the external mask patterns, and the internal mask patterns 28a-28f may have the same horizontal cross-sectional shape.

The internal mask patterns 28a to 28f may be formed of a material different from the reference mask pattern 12 and the external mask patterns 14a to 14f and formed of the metal mask layer 26 as described above. The inner mask patterns 28a-28f may be metal mask patterns.

As shown in FIG. 1 (b), the inner mask patterns 28a to 28f are formed inside the outer mask patterns 14a to 14f, and two outer masks Six patterns may be formed in the honeycomb shape in the center portion of the triangle formed when connecting the patterns 14a to 14f by imaginary lines.

As will be described later, by using the reference mask pattern 12, the honeycomb outer mask patterns 14a-14f and the inner mask patterns 28a-28f as shown in Fig. 1 (b) A honeycomb-like material pattern can be formed by patterning the layer.

FIGS. 2A to 8A and FIGS. 2B to 8B are diagrams illustrating a method of forming a honeycomb pattern of a semiconductor device according to an embodiment of the present invention. FIGS. 2A to 8A Are plan views illustrating planar shapes of some of the constituent elements, Figs. 2B to 4B are cross-sectional views illustrating the structure of the AA 'cross section in Figs. 1A to 4A, respectively, and Figs. 5B to 8B are cross- 8A is a cross-sectional view illustrating the structure of a line AA 'and a line BB' of FIG. 8A.

Referring to FIGS. 2A and 2B, transistor structures (not shown), word lines (not shown), bit lines (not shown), conductive regions (not shown) are formed on a substrate 100, A predetermined substructure may be formed. A material layer 108 to be patterned may be formed on the substrate 100 on which the substructure is formed.

The layer of material 108 to be patterned may be a plurality of film layers, i.e., a plurality of layers. Illustratively, the layer of material 108 to be patterned may be formed of a first material layer 102, a second material layer 104, and a third material layer 106 in sequence. May be the topmost material layer of the third material layer 106. The first material layer 102 may be an oxide layer (silicon oxide layer). The second material layer 104 may be a polysilicon layer. The third material layer 106 may be a nitride layer (silicon nitride layer). The first material layer 102 may be thicker than the second and third material layers 104, 106. The first material layer 102 may be formed at about 1500 and the second and third material layers 104 and 106 may be formed at 500. When the idea of the present invention is applied to a memory semiconductor device, for example, a DRAM device, the first material layer 102 may be a mold oxide layer for forming a storage electrode of a capacitor.

A mask layer 114 may be formed on the material layer 108 to be patterned. The mask layer 114 may be a hard mask layer. The mask layer 114 may be formed of a plurality of material layers. Illustratively, the mask layer 114 may be formed of a first mask layer 110 and a second mask layer 112. The first mask layer 110 may be formed on the material layer 108 to be patterned, may be formed of an amorphous carbon layer (ACL), and may be formed to a thickness of about 1500. The second mask layer 112 may be formed of a nitride layer (silicon nitride layer, SiON), and may be formed to a thickness of about 200 nm.

A plurality of photoresist patterns 116 may be formed on the mask layer 114 using a photolithography process. The photoresist patterns 116 may be formed in a honeycomb shape. The photoresist patterns 116 can be formed to a photolithography device (photolithography device) that is larger than the photolithography process limit or is photolithography process process limit. One of the honeycomb photoresist patterns 116 may be represented by the dotted line HCl in FIG. 1A. The photoresist patterns 116 may be repeatedly formed on the mask layer 114.

The photoresist patterns 116 may be in the form of a honeycomb consisting of a reference photoresist pattern 118 and external photoresist patterns 120a-120f as described above with respect to FIG. 1A and FIG. The reference photoresist pattern 118 can be described as corresponding to the reference mask pattern 12 described above and the external photoresist patterns 120a to 120f correspond to the external mask patterns 14a to 14f So that the description is omitted here.

Referring to FIGS. 3A and 3B, the mask layer 114 is etched using the photoresist patterns 116 as an etching mask to form a plurality of mask patterns 114-1 in the form of a first honeycomb. The mask patterns 114-1 may be composed of the first mask patterns 110-1 and the second mask patterns 112-1.

The mask patterns 114-1 are transferred according to the shape of the photoresist patterns 116, and thus may be formed in a honeycomb form. Therefore, the mask patterns 114-1 and the second mask patterns 112-1 on a plane may correspond to the reference mask pattern 12 and the external mask patterns 14a-14f described above, The description is omitted. The mask patterns 114-1 may be formed in a cylindrical columnar shape. Then, the photoresist patterns 116 are removed.

Referring to FIGS. 4A and 4B, first spacers 122 are formed on the outer wall of the mask patterns 114-1. The first spacers 122 may be formed of an oxide layer (silicon oxide layer). The first spacers 122 may be formed by forming an oxide layer on the entire surface of the material layer 108 on which the mask patterns 114-1 are formed, and then anisotropically etching the oxide layer. The first spacers 122 can expose some of the surface of the material layer 108 between the mask patterns 114-1.

5A and 5B, second spacers 124 are formed on the outer wall of the first spacers 122, and a plurality of adjacent second spacers 124 are formed to be in contact with each other. In this way, holes 125 can be formed in a self-aligning manner between the second spacers 124 formed on the outer wall of the adjacent three mask patterns 114-1.

In other words, the hole 125 is formed by connecting two external mask patterns 14a-14f adjacent to the reference mask pattern 12 according to the formation of the spacers 122, 124 as described above, In the inner center of the triangle formed when the connection is made to the center of the triangle.

Subsequently, the metal mask layer 126 is sufficiently filled in the holes 24 formed between the outer walls of the adjacent three mask patterns 114-1. Thus, a metal mask layer 126 is formed on the mask patterns 114-1 and the spacers 122 and 124. [ The metal mask layer 126 may be formed of a material having a melting point lower than 500 캜. The metal mask layer 126 may be formed of indium (In) or tin (Sn).

6A and 6B, the metal mask layer 126 is etched back to form a metal mask layer 126-1 in the holes 24 between the outer walls of the adjacent three mask patterns 114-1. . As can be seen from the plan view of FIG. 6A, the metal mask (not shown) buried in the holes 125 formed between the outer walls of the adjacent three mask patterns 114-1, that is, The layer 126-1 may be formed in a triangular prism shape. The metal mask layer 126-1 in the form of a triangular prism can be more clearly described in Fig. 7A, which will be described later.

Referring to FIGS. 7A and 7B, the first spacers 122 and the second spacers 124 may be removed using an etching process. In this case, only the mask patterns 114-1 and the metal mask layer 126-1 are left on the patterned material layer 108. The mask patterns 114-1 may be in the form of a cylindrical column, and the metal mask layer 126-1 may be in the form of a triangular prism.

Referring to FIGS. 8A and 8B, the metal mask layer 126-1 is reflowed to form metal mask patterns 126-2. The metal mask patterns 126-2 may be formed in the form of a second honeycomb in a first honeycomb shape in which the mask patterns 114-1 and the second mask patterns 112-1 are formed in a plan view.

Using the surface tension of the metal mask layer 126-1 through the metal mask layer 126-1 upon reflow, the metal mask layer 126-1 in the form of a triangular prism has a cylindrical metal mask pattern 126- 2). Accordingly, the mask patterns 114-1 and the metal mask patterns 126-2 can be formed in a cylindrical column shape and have the same horizontal cross-sectional shape

Subsequently, the material layer 108 is etched using the first and second honeycomb-shaped mask patterns 114-1 and the metal mask patterns 126-2 to form a honeycomb-like material pattern 108-1. Can be formed. 8A and 8B illustrate that the first material pattern 106-1 is formed by etching the third material layer 106 which is the uppermost material layer among the patterned material layers 108. [ Since the first material pattern 106-1 is formed by directly etching the third material layer 106 using the mask patterns 114-1 and the metal mask patterns 126-2, Material pattern 106-1. If necessary, the first and second material layers 102 and 104 may be etched using the honeycomb-shaped columnar material pattern 106-1 to form honeycomb-shaped material patterns.

FIGS. 9A and 10A and FIGS. 9B and 10B are diagrams illustrating a method of forming a honeycomb pattern of a semiconductor device according to an embodiment of the present invention, And FIGS. 9B and 10B are cross-sectional views illustrating structures of the AA 'and BB' line sections in FIGS. 9A and 10A, respectively.

Specifically, FIGS. 9A and 10A and FIGS. 9B and 10B illustrate a method of forming a hole-like material pattern that is not the columnar material pattern of the embodiment of FIGS. 2A to 8A and FIGS. 2B to 8B described above.

The first material pattern 106-1 is formed by the process of Figs. 8A and 8B. Then, referring to 9a and 9b, the honeycomb-shaped mask patterns 114-1 and the metal mask patterns 126-2 are removed. In this case, only the first material patterns 106-1 in the form of a honeycomb are left on the second material layer 104.

Subsequently, an additional mask layer 130 is formed so as to sufficiently fill the spaces between the honeycomb-shaped first material patterns 106-1. The additional mask layer 130 may be formed of a hard mask layer. The additional mask layer 130 may be an organic hard mask layer. The additional mask layer 130 may be a spin on hard mask (SOH) mask layer that may be formed by a spin method. Then, the additional mask layer 130 is etched back to the etching line 131 to form an additional mask pattern 130-1 for embedding between the first material patterns 106-1.

10A and 10B, the first material pattern 106-1 is exposed to the outside in accordance with the additional mask pattern 130-1. Subsequently, when the first material pattern 106-1 is removed, an additional mask pattern 130-1 having honeycomb hole patterns 132 is formed. That is, the hole patterns 132-1 may be formed in the additional mask pattern 130-1.

Subsequently, the second material layer 104 under the uppermost material layer is etched using the additional mask pattern 130 having the hole patterns 132-1 as an etching mask to form the hole-like second material patterns 104 -1) can be formed.

FIGS. 11A and 12A and FIGS. 11B and 12B are diagrams illustrating a method of forming a honeycomb pattern of a semiconductor device according to an embodiment of the present invention, And FIGS. 11B and 12B are cross-sectional views illustrating structures of the AA 'and BB' line sections in FIGS. 11A and 12A, respectively.

Specifically, FIGS. 11A and 12A and FIGS. 11B and 12B illustrate a photoresist pattern 134 formed on the edge portion of the substrate 100 during the etching of the additional mask layer 130 in FIGS. 9A and 10A and FIGS. 9B and 10B, And then the additional mask layer 130 is etched. 11A and 12A and FIGS. 11B and 12B can reduce the possibility of occurrence of defects due to the difference in etching thickness between the edge portions of the substrate 100 and the cell portions except the edges of the substrate 100 in the manufacturing process have.

More specifically, the additional mask layer 130 is formed so as to sufficiently fill the space between the first material patterns 106-1 in the honeycomb form as shown in Figs. 9A and 9B, Figs. 11A and 11B. A photoresist pattern 134 is formed on the additional mask layer 130 formed at the edge portion of the substrate 100. The portion where the photoresist pattern 134 is formed may be the edge portion of the substrate 100 and the portion 136 where the photoresist pattern 134 is not formed may be the cell portion of the semiconductor device.

Next, as shown in FIGS. 12A and 12, the additional mask layer 130 is etched to the etching line 131 using the photoresist pattern 134 as a mask to expose the first material pattern 106-1 in the cell region Thereby forming an additional mask pattern 130-2. In other words, the first material pattern 106-1 remains at the edge of the substrate 100. [

Then, as shown in Figs. 12A and 12, the first material pattern 106-1 is exposed to the outside in accordance with the additional mask pattern 130-2. Subsequently, when the first material pattern 106-1 is removed, an additional mask pattern 130-2 having honeycomb hole patterns 132-2 is formed. That is, the hole patterns 132-2 may be formed in the additional mask pattern 130-2.

Subsequently, the second material layer 104 is etched using the additional mask pattern 130-2 having the hole patterns 132-1 as an etching mask to form the hole-like second material patterns 104-1 in the form of honeycomb, Can be formed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the present invention is not limited to the above-described exemplary embodiments, and various changes and modifications may be made by those skilled in the art within the technical scope and spirit of the present invention. Change is possible.

12: reference mask pattern, 14a-14f: external mask patterns, 22: spacers, 24: hole, 26: metal mask layer, 28a-28f:

Claims (10)

Forming a layer of material to be patterned on a substrate;
Forming a reference mask pattern and six external mask patterns in a honeycomb pattern using a photolithography process in a first direction to a sixth direction at an interval of 60 degrees around the reference mask pattern on the material layer to be patterned;
Forming six internal mask patterns in a honeycomb form in a central portion of a triangle formed when connecting two external mask patterns formed inside the external mask patterns and adjacent to the reference mask pattern by virtual lines; And
And forming a honeycomb-shaped material pattern by patterning the material layer using the reference mask pattern, the honeycomb-shaped outer mask patterns, and the inner mask patterns. 2. The method of claim 1, wherein forming the honeycomb-
A plurality of spacers are formed on an outer wall of the outer mask patterns so as to contact between the reference mask pattern and the outer mask patterns and between the outer mask patterns, Forming a hole in the inner center of the triangle formed when the patterns are connected by the imaginary line;
Filling the hole with a metal material to form a metal mask layer;
Removing the spacers; And
And reflowing the metal mask layer to form the internal mask patterns in a honeycomb pattern. The method of claim 1, wherein the reference mask pattern, the outer mask patterns, and the inner mask patterns have the same horizontal cross-sectional shape. The method of claim 1, wherein the reference mask pattern and the outer mask patterns are formed of a hard mask layer, and the inner mask patterns are formed of a material different from the reference mask pattern and the outer mask patterns, Wherein the pattern forming method comprises the steps of: Forming a layer of material to be patterned on a substrate;
Forming a plurality of mask patterns in a first honeycomb pattern on the layer of material to be patterned using a photolithography process;
Forming first spacers on an outer wall of the mask patterns;
Forming second spacers on the outer wall of the first spacers so that adjacent ones of the second spacers are in contact with each other and forming holes self-energetically between the second spacers formed on the outer wall of the adjacent three mask patterns ;
Embedding a metal mask layer in a hole formed between outer walls of the adjacent three mask patterns;
Removing the first spacers and the second spacers;
Reflowing the metal mask layer to form metal mask patterns in the form of a second honeycomb in a first honeycomb shape; And
And forming a honeycomb-shaped material pattern by etching the material layer using the first and second honeycomb-shaped mask patterns and metal mask patterns. 6. The method according to claim 5, wherein the mask patterns are formed in a cylindrical columnar shape. The method of claim 5, wherein the metal mask layer buried in the holes formed between the outer walls of the adjacent three mask patterns is formed in a triangular prism shape,
Wherein the metal mask layer in the form of a triangular prism is changed into a cylindrical columnar shape by using surface tension through the reflow. 6. The method of claim 5, wherein forming the material pattern further comprises:
And etching the material layer using the honeycomb-shaped mask patterns and the metal mask patterns as an etching mask to form a honeycomb-shaped columnar material pattern. 6. The method of claim 5, wherein forming the material pattern further comprises:
Forming a plurality of layers of the material;
Etching the uppermost material layer of the material layers using the honeycomb-shaped mask patterns and the metal mask patterns as an etching mask to form honeycomb-shaped first material patterns;
Removing the honeycomb-shaped mask patterns and the metal mask patterns;
Forming an additional mask pattern for embedding the first material patterns in the honeycomb-like pattern,
Etching the first material pattern to form hole patterns in the additional mask pattern;
And etching the material layer under the uppermost material layer using the additional mask pattern having the hole patterns as an etching mask to form a hole-like second material pattern in the form of a honeycomb. The method of claim 9, wherein the additional mask pattern having the hole patterns comprises:
Forming an additional mask layer between the first material patterns in the honeycomb-like form and sufficiently filling over the first material pattern,
Forming a photoresist pattern on the additional mask layer at an edge portion of the substrate;
Exposing the first material pattern by etching the additional mask layer with the photoresist pattern as a mask,
And etching the first material pattern. ≪ Desc / Clms Page number 19 >
KR1020130007088A 2013-01-22 2013-01-22 Method of forming pattern having honeycomb type in semiconductor device KR20140094352A (en)

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