KR20140085971A - Deposition apparatus and method for organic light emitting diode device - Google Patents

Abstract

The present invention relates to a deposition apparatus for an OLED device which is capable of preventing a light emitting layer from having a multilayer structure when the light emitting layer is formed through a scan deposition method using a plurality of deposition sources and a method thereof. A deposition apparatus of the present invention includes first to third deposition sources which include first to third deposition materials, respectively. The first to third deposition sources are disposed to overlap each other in a first direction while being spaced apart from each other in parallel in a second direction perpendicular to the first direction which is a scan direction of the substrate, such that the first to third deposition materials are simultaneously deposited on the substrate. First to third deposition areas, in which the first to third deposition sources simultaneously deposit the first to third deposition materials on the substrates, similarly overlap each other in the first direction.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a deposition apparatus and a method for an organic light-

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition technique of an organic light emitting diode (OLED) device, and more particularly, to a method of forming a light emitting layer by a scan deposition method using a plurality of evaporation sources, 0001] The present invention relates to a deposition apparatus and a method for an OLED element.

BACKGROUND ART [0002] As a recent image display device, a flat panel display including a liquid crystal display (LCD), an organic light emitting diode (OLED) display, a plasma display panel (PDP) have.

The OLED display is a self-luminous device that emits an organic light-emitting layer by recombination of electrons and holes, and is expected to be a next-generation display device because of its high luminance, low driving voltage and ultra thin film. Each pixel of the OLED display has an OLED element and a pixel circuit that independently drives the OLED element.

The OLED element includes an anode and a cathode, an organic light emitting layer between the anode and the cathode, a hole-related layer including at least one of a hole injection layer and a hole transporting layer between the anode and the organic light emitting layer, an electron injection layer between the cathode and the organic light emitting layer, And an electron-transporting layer. In the OLED, when a positive bias is applied between the anode and the cathode, electrons from the cathode are supplied to the organic light-emitting layer via the electron-related layer, and holes from the anode are supplied to the organic light-emitting layer via the hole- Accordingly, energy generated by recombination of electrons and holes supplied in the organic light emitting layer emits fluorescence or phosphorescent material, thereby generating light proportional to the amount of current. The OLED element may be a top emission type, a bottom emission type, or a two-sided type emission by forming at least one electrode of a cathode and an anode in a transmission type and forming the remaining electrodes in a reflection type.

In such an OLED element, an organic layer including an organic light emitting layer is usually formed through a thermal deposition process. In the thermal deposition process, a substrate is rotated in a deposition apparatus, or an organic material layer is formed by a scanning method in which the substrate is moved in a linear direction. The scan deposition method is suitable for mass production because of its material efficiency and thickness uniformity.

In the case of forming the organic layer to be mixed with the different organic materials by using the scan deposition method, two or more evaporation sources must be used. Therefore, the deposition distribution of the different organic materials differs due to the positional difference between the evaporation sources, .

However, when a light emitting layer including two host materials having different characteristics is formed in a multi-layer structure, there is a problem that luminous efficiency is lowered, driving voltage is increased, and lifetime is shortened.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a method of forming a light emitting layer by a scan deposition method using a plurality of evaporation sources, And to provide a deposition apparatus and method for OLED elements.

In order to solve the above-described problems, the deposition equipment for OLED devices of the present invention includes first through third evaporation sources each including first through third evaporation materials, and the first through third evaporation sources include first Wherein the first deposition material is arranged to overlap with the first deposition material in the first direction while being spaced apart from each other in a second direction perpendicular to the first direction which is the scanning direction of the substrate for simultaneously depositing the third deposition material on the substrate, Wherein the first to third evaporation sources overlap the first to third evaporation areas in which the first to third evaporation materials are simultaneously deposited on the substrate in the first direction.

The deposition method for an OLED element according to an embodiment of the present invention includes the first to third deposition materials and is spaced apart in a second direction perpendicular to the first direction which is the scanning direction of the substrate, The first to third evaporation sources are formed by co-depositing the first to third evaporation materials from the first to third evaporation sources on the substrate using the first to third evaporation sources arranged to overlap with each other, Are simultaneously superimposed in the first direction to simultaneously deposit the first to third evaporation materials on the substrate.

Wherein the first evaporation source deposits a first host material, the second evaporation source deposits a dopant material, and the third evaporation source deposits a third host material on the first substrate, A light emitting layer in which the host material and the dopant material are mixed is formed into a single layer structure.

With respect to the first direction, the deposition angles of the first to third evaporation sources are controlled to be equal to each other.

The first to third deposition regions of the first to third evaporation sources are overlapped or overlapped so as to be equal to each other with respect to the second direction of the substrate.

The outer deposition angles of the first and third deposition sources located outside the first through third deposition sources are set to be larger than the inner deposition angle so as to overlap the first through third deposition areas in the second direction Respectively.

The outer deposition angle of the first and third evaporation sources with respect to the second direction is set by using an angle control plate in the horizontal direction or by inclining the first and third evaporation sources to the second evaporation source side located between them Respectively.

The set of evaporation sources including the first to third evaporation sources is repeatedly arranged in the second direction so that the first to third evaporation regions are overlapped with the adjacent evaporation regions on the substrate to be repeated in the second direction .

The apparatus and method for depositing OLED elements according to the present invention are characterized in that a plurality of evaporation sources are arranged in a direction perpendicular to a scanning direction (traveling direction) of a substrate, Can be formed into a single layer structure rather than a multi-layer structure.

Accordingly, an apparatus and a method for depositing OLED elements according to the present invention are characterized by arranging two host sources and one dopant source having different characteristics in a direction perpendicular to the scanning direction (traveling direction) of the substrate and overlapping the source- Two hosts and one dopant are deposited at the same time to form a single layer structure instead of a multilayer structure of the related art, thereby improving the luminous efficiency and lifetime and lowering the driving voltage.

1 is a cross-sectional view schematically showing an OLED element applied to the present invention.
FIG. 2 is a plan view and a cross-sectional view schematically showing the structure of a deposition apparatus of the related art for forming the light emitting layer shown in FIG.
FIG. 3 is a view showing a deposition method of the deposition apparatus shown in FIG. 2. FIG.
4 is a cross-sectional view showing a multilayer structure of a light emitting layer formed by the deposition apparatus and method shown in FIG.
5 is a plan view and a side view schematically showing the structure of a deposition apparatus according to an embodiment of the present invention.
FIG. 6 is a view showing a deposition method using the deposition apparatus shown in FIG.
FIG. 7 is a cross-sectional view illustrating a single layer structure of a light emitting layer formed by the deposition apparatus and method shown in FIG. 6, in comparison with the multilayer structure of FIG.
8 to 10 are side views schematically showing various arrangements of a deposition apparatus according to another embodiment of the present invention.
FIG. 11 is a diagram showing a comparison of the lifetime of the multilayer structure of the related art shown in FIG. 4 and the lifetime of the single layer structure of the present invention shown in FIG.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a cross-sectional view schematically showing an OLED device for applying the present invention.

The OLED device shown in FIG. 1 includes an organic emission layer (EML) between a first electrode 4 and a second electrode 10, first and second electrode poles 4 and 14, a first electrode Related organic layer 6 between the organic emission layer EML and the organic emission layer EML and an electron related organic layer 8 between the organic emission layer EML and the second electrode 10. [

The substrate 2 on which the first electrode 4 is formed may be a thin film transistor array substrate having a pixel circuit including at least a switching thin film transistor and a driving thin film transistor and a capacitor for driving the OLED element independently.

At least one of the first electrode 4 and the second electrode 10 is formed as a transmissive electrode and the other electrode is formed as a reflective electrode. When the first electrode 4 is a transmissive electrode and the second electrode 10 is a reflective electrode, a bottom emission structure is formed in which light is emitted downward in FIG. Alternatively, if the second electrode 10 is a transmissive electrode and the first electrode 4 is a reflective electrode, the light emitting structure is a top emission structure that emits light to the top in FIG. Alternatively, if the first and second electrodes 4 and 10 are both transmissive electrodes, a double-sided light-emitting structure is obtained.

Either the first electrode 4 or the second electrode 14 is an anode, and the other electrode is a cathode. The anode includes a transparent electrode layer made of a metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or ZnO having a high work function. The cathode includes a metal having a low work function such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca and Yb. At least one of the anode and the cathode is formed as a transmissive electrode. The transmissive electrode may have a multi-layer structure in which the transmissive metal thin film using the metal and the metal oxide layer are alternately laminated. One of the anode and the cathode is formed as a reflective electrode. The reflective electrode may be formed in a multi-layer structure including a metal layer made of Al or AlNd having a high reflectivity in the metal material and the metal oxide layer. In FIG. 1, the first electrode 4 is an anode and the second electrode 14 is a cathode.

A hole-related organic layer 10 having a structure in which a hole injection layer (HIL) and a hole transport layer (HTL) are stacked on the first electrode 4 of the substrate 2 is subjected to a thermal deposition process . The hole injection layer (HIL) serves to smoothly inject holes from the first electrode (4). The hole transport layer (HTL) transfers holes from the hole injection layer (HIL) to the light emitting layer (EML).

On the hole transport layer (HTL), a light emitting layer (EML) is formed through a thermal deposition process.

An electron-related organic layer 8 having a structure in which an electron transport layer (ETL) and an electron injection layer (EIL) are stacked is formed on the light-emitting layer (EML) through thermal deposition and fixation. The electron injection layer (EIL) serves to smoothly inject electrons from the second electrode (10). The electron transport layer (ETL) transfers electrons from the electron injection layer (EIL) to the light emission layer (EML).

A second electrode 10 is formed on the electron-related organic layer 8 and a capping layer for protecting the organic layers and the lower electrode on the second electrode 10 and increasing the light extraction efficiency, Layer (CPL) is formed.

The light emitting layer (EML) emits light by fluorescence or phosphorescence by the energy generated by the electrons supplied through the hole transport layer (HTL) and electrons supplied through the electron transport layer (ETL). Recently, as a light emitting layer (EML), a mixed light emitting layer containing two host materials (H1, H2) and one dopant material (D) having different transport characteristics is applied to improve the light emitting efficiency.

The mixed light emitting layer (EML) includes a first host material (H1) of a hole type having good hole transporting characteristics, a second host material (H2) of an electron type having a good electron transporting property, and a fluorescent or phosphorescent dopant material D are mixed and formed. This mixed light emitting layer (EML) facilitates the injection of holes and electrons by the first host material (H1) of the hole type and the second host material (H2) of the electron type, The efficiency is improved.

For example, the hole-type first host material H1 may include 4,4 ', 4 "-tris (N-carbazolyl) -triphenylamine or CBP (4,4'-bis (carbazol- bis (triphenylsilyl) benzene) or TAZ (3-phenyl-4- (1'-naphthyl) -5-phenyl -1,2,4-triazole) and the like may be used, but the present invention is not limited thereto.

1, only one light emitting unit 20 is formed between the first and second electrodes 4 and 10. However, a plurality of light emitting units emitting light of different colors are stacked to generate white light A tandem structure can be applied.

As described above, the light emitting layer (EML) formed of the mixed layer of the first and second host materials (H1, H2) and the dopant material (D) is formed through a scan deposition process using a thermal evaporation apparatus having different evaporation sources .

FIG. 2 is a sectional view (a) and a plan view (b) schematically showing a structure of a deposition apparatus for a mixed light emitting layer according to the related art of the present invention, and FIG. 3 is a view showing a deposition process of a mixed light emitting layer using the deposition apparatus shown in FIG. Sectional view.

The deposition apparatus for the mixed light emitting layer shown in FIG. 2 includes a first evaporation source 32 disposed on the support plate 30 for emitting a first host material H1, a pair of evaporation sources 32 for emitting a dopant material D1, A second evaporation source 36 and a third evaporation source 36 for discharging the second host material H2. Further, the deposition apparatus has an angle control plate 40 for controlling the deposition angle of the evaporation sources 32, 34, and 36.

The first and third evaporation sources 32 and 36 are arranged on the support plate 30 in parallel along the x-axis direction in the scan direction and the pair of second evaporation sources 34 are arranged in the y- And the line width of both sides of the second evaporation source 34 with respect to the x-axis direction is smaller than the line width of each of the first and third evaporation sources 32 and 36 Respectively. Accordingly, the light emitting regions of the first to third evaporation sources 32, 34, and 36 partially overlap each other, and the deposition region for the substrate 50 is partially overlapped with each other along the scanning direction (x-axis direction).

3, the support plate 30 or the substrate 50 on which the first to third evaporation sources 32, 34, and 36 are mounted is moved along the guide rail (not shown) The first host material H1 and the dopant material D and the second host material H2 from the first through third evaporation sources 32, 34 and 36 are deposited on the substrate 50, Is formed. 3, the substrate 50 is fixed and the support plate 30 is moved in the scan (x-axis) direction. 3, the angle control panels 42 and 44 in the vertical direction control the deposition angle of the second evaporation source 34 on both sides and the angle control plate 46 in the vertical direction controls the evaporation angle of the first and third evaporation sources 32 and 36 ), And the horizontal angle control panel 40 controls the outer deposition angle of each of the first and third evaporation sources 32, 36.

However, since the positions of the first to third evaporation sources 32, 34 and 36 are different from each other in the scan (x-axis) direction as shown in Fig. 3, the first to third evaporation sources 32, 34 and 36 The first to third deposition regions 33, 35 and 37 on the substrate 50 partially overlap with each other but do not coincide with each other as the emission regions that emit the deposition material in the substrate 50 partially overlap each other . 4, when the mixed light emitting layer (EML) is scan-deposited using the first to third evaporation sources 32, 34, and 36 having different positions in the scan (x axis) direction, A mixed light emitting layer (EML) is formed in different multi-layer structures.

For example, as shown in FIG. 3, at a certain point in the deposition process, the second deposition region 33 of the first vapor deposition source 32 and the second vapor deposition source 34 adjacent thereto from the rightmost side Since only the first host material H1 from the first evaporation source 32 is deposited in the region A where the region 35 does not overlap, the first light emitting layer 51 containing the first host material H1 is formed do. The first host material 32 from the first evaporation source 32 is introduced into the region B where the first deposition region 33 of the first evaporation source 32 overlaps with the deposition region 35 of the second evaporation source 34, The second light emitting layer 52 in which the first host material H1 and the dopant material D are mixed is deposited on the first light emitting layer 51 . The first host material H1 from the first evaporation source 32 and the second host material H2 from the first evaporation source 32 are deposited in the region C where the deposition regions 33, 35 and 37 of the first to third evaporation sources 32, Since the dopant material D from the second evaporation source 34 and the second host material H2 from the third evaporation source 36 are co-deposited, the first and second host materials H1 and H2 and the dopant material (D) are mixed is formed on the second light-emitting layer 52. The third light- The dopant material D from the second evaporation source 34 is injected into the region E where the deposition region 35 of the second evaporation source 34 overlaps with the deposition region 37 of the third evaporation source 36 Since the second host material H2 from the third evaporation source 36 is co-deposited, the fourth emission layer 54 in which the dopant material D and the second host material H2 are mixed is formed on the third emission layer 53 As shown in FIG. A second host material (not shown) from the third evaporation source 36 is deposited in a region F where the deposition region 37 of the third evaporation source 36 and the deposition region 35 of the second evaporation source 34 are not overlapped with each other H 2) is deposited, a fifth light emitting layer 51 containing only the second host material H 2 is formed on the fourth light emitting layer 54.

Accordingly, when the first to third evaporation sources 32, 34, and 36 are scanned once, the first to fifth emission layers 51 to 55 are sequentially stacked on the substrate 50 as shown in FIG. 4, The fifth to the first light emitting layers 55 to 51 are sequentially stacked in the opposite order so that the light emitting layer (EML) has ten multi-layer structures having different distributions of the adjacent layer and the deposition material.

4, the organic material distribution of the first and second host materials H1 and H2 and the dopant material D is not uniform in the stacking direction, And the lifetime is reduced. For example, the first light emitting layer 51 containing only the first host material H1 having a good hole transporting property is adjacent to the electron transporting layer ETL as well as the hole transporting layer HTL shown in FIG. 1, The driving voltage needs to be increased, so that the luminous efficiency and lifetime can be reduced.

Therefore, in order to solve the problems of the related art, the present invention provides a multi-layer structure in which a mixed light emitting layer (EML) containing first and second host materials (H1, H2) and a dopant material (D) A single layer structure is formed.

FIG. 5 is a plan view (a) and a side view (b) schematically showing a deposition apparatus for a mixed light emitting layer according to an embodiment of the present invention, and FIG. 6 shows a process of depositing a mixed light emitting layer (EML) using the deposition apparatus shown in FIG. And FIG. 7 is a cross-sectional view illustrating the mixed light emitting layer (EML) structure of the present invention and the related art.

The deposition apparatus for the mixed light emitting layer shown in FIG. 5 includes a first evaporation source 62 disposed on the support plate 60 for discharging the first host material H1, a second evaporation source 62 for discharging the dopant material D1, A source 64 and a third evaporation source 66 for emitting the second host material H2. The deposition apparatus also includes an angle control plate (not shown) for controlling the deposition angle of the evaporation sources 32, 34 and 36.

The first to third evaporation sources 62, 64 and 66 are arranged on the supporting plate 60 in parallel to each other along the y-axis direction perpendicular to the x-axis direction which is the scanning direction. The first to third evaporation sources 62, , 64, and 66 are overlapped with each other. Accordingly, the first to third deposition regions 63, 65, and 67 of the first to third evaporation sources 62, 64, and 66 are overlapped so as to be the same in the scanning direction (x-axis direction) do. The first to third evaporation sources 62, 64, and 66 have a structure elongated in the z-axis direction.

6, the support plate 60 or the substrate 50 on which the first to third evaporation sources 62, 64, 66 are mounted is moved in the scan (x-axis) direction along a guide rail (not shown) The first host material H1, the dopant material D and the second host material H2 from the first to third evaporation sources 62, 64 and 66 are simultaneously deposited on the substrate 50, EML) is formed. In FIG. 6, the substrate 50 is fixed and the support plate 60 moves in the scan (x-axis) direction, for example. 6, the angle control plate 70 in the horizontal direction has a deposition angle with respect to the scan (x-axis) direction of each of the first to third evaporation sources 62, 64 and 66, that is, the first to third evaporation sources 62 65, and 67 with respect to the scan (x-axis) direction of the scan lines 64, 66, and 66, respectively. The substrate 50 shown in FIG. 6 may be a substrate formed from the first electrode 4 to the hole-related organic layer 6 in FIG. 1 or a substrate formed from the second electrode 10 to the electron-related organic layer 8.

Axis positions of the first to third evaporation sources 62, 64, and 66 are equal to each other with respect to the scan (x-axis) direction and the x-axis position and line width of the deposition regions 63, 65, The first and third evaporation sources 62, 64, and 66 are used to scan and deposit the mixed light emitting layer (EML), the first and second host materials H1 and H2 ) And a dopant material (D) are uniformly distributed and mixed.

Accordingly, the mixed light emitting layer (EML) formed in the single layer structure by the vapor deposition apparatus of the present invention as compared with the mixed light emitting layer (EML) formed in the multilayer structure as shown in FIG. 4, Since the first host material (H1) having a good hole transporting property and the second host material (H2) having a good electron transporting property are all distributed in the region adjacent to the related layer, the hole and electron transfer ability is increased, And the lifetime is improved. In addition, the mixed light emitting layer (EML) formed in a single layer structure as compared with the mixed light emitting layer (EML) formed in a multilayer structure is uniformly distributed over the entire region of the dopant material (D) The efficiency is improved.

8 to 10 are left sectional views showing various embodiments for uniformly depositing the evaporation material in the y-axis direction perpendicular to the x-axis direction which is the scanning direction.

8, the positions of the first to third evaporation sources 62, 64 and 66 in the y-axis direction are different from each other, but the positions of the first to third evaporation sources 62, By appropriately controlling the deposition angle, the first to third vapor deposition regions 63, 65, and 67 in the y-axis direction can be similarly superimposed. For example, by using a pair of horizontal angle control plates 72 to increase the outer deposition angle of each of the first and third evaporation sources 62 and 66 from the inner deposition angle, The three deposition regions 63, 65, and 67 can also be superposed in the same manner.

9, even when the first and third evaporation sources 62 and 66 are inclined toward the second evaporation source 64 in the evaporation apparatus shown in FIG. 8, the first to third deposition in the y- The regions 63, 65, and 67 can be overlapped in the same manner.

10, the first to third evaporation sources 62, 64, and 66 are repeatedly arranged in the y-axis direction to form the first to third evaporation areas 63, 65, and 67 on the substrate 50, The evaporation materials from the first to third evaporation sources 62, 64 and 66 can be deposited in a uniform distribution in the y-axis direction.

Table 1 below shows the OLED elements of the related art using a multilayer structure emission layer (EML; FIG. 4) and the OLED elements of the present invention using a single layer structure emission layer (EML; And Fig. 11 is a graph showing the lifetime of the OLED device according to the related art and the present invention in comparison with the lifetime.

Referring to Table 1 and FIG. 11, the OLED device of the present invention using a single layer structure emission layer (EML; FIG. 7) in comparison with the related art OLED device using a multilayer structure emission layer (EML; Shows that the color coordinates are similar but the driving voltage is decreased, the luminance is increased, and the lifetime of maintaining the luminance of 97% or more is increased.

As described above, the deposition apparatus and method for an OLED element according to the present invention can arrange a plurality of evaporation sources in a direction perpendicular to a scanning direction (traveling direction) of a substrate, The mixed organic compound layer containing different organic materials can be formed into a single layer structure rather than a multilayer structure.

Accordingly, an apparatus and a method for depositing OLED elements according to the present invention are characterized by arranging two host sources and one dopant source having different characteristics in a direction perpendicular to the scanning direction (traveling direction) of the substrate and overlapping the source- Two hosts and one dopant are deposited at the same time to form a single layer structure instead of a multilayer structure of the related art, thereby improving the luminous efficiency and lifetime and lowering the driving voltage.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, Can be carried out within a range. Accordingly, such modifications are deemed to be within the scope of the present invention, and the scope of the present invention should be determined by the following claims.

2, 50: substrate 4: first electrode
6: hole-related organic layer 8: electron-related organic layer
10: Second electrode HIL: Hole injection layer
HTL: hole transport layer EML, 51 to 55: light emitting layer
ETL: electron transport layer EIL: electron injection layer
CPL: capping layer 30, 60: support plate
32, 34, 36, 72, 62, 64, 66: evaporation sources 33, 35, 37, 63, 65,
40, 42, 44, 46, 70, 72: angle control panel

Claims (14)

The first to third evaporation sources each including the first to third evaporation materials,
Wherein the first to third evaporation sources are spaced apart from each other in a second direction perpendicular to a first direction which is a scanning direction of the substrate for simultaneously depositing the first to third evaporation materials on the substrate, Are arranged to overlap each other in one direction,
Wherein the first to third evaporation sources overlap the first to third evaporation areas for simultaneously depositing the first to third evaporation materials on the substrate in the first direction. (Hereinafter referred to as " OLED ") device. The method according to claim 1,
Wherein the first evaporation source deposits a first host material, the second evaporation source deposits a dopant material, and the third evaporation source deposits a third host material on the first substrate, Wherein a light emitting layer in which a host material and the dopant material are mixed is formed in a single layer structure. The method of claim 2,
Wherein a deposition angle of the first to third evaporation sources is controlled to be equal to each other in the first direction. The method of claim 2,
Wherein the first to third evaporation regions of the first to third evaporation sources overlap each other or partially overlap with each other in the second direction of the substrate. The method of claim 4,
The outer deposition angles of the first and third deposition sources located outside the first through third deposition sources are set to be larger than the inner deposition angle so as to overlap the first through third deposition areas in the second direction And controlling the amount of light emitted from the light emitting element to a large extent. The method of claim 5,
The outer deposition angle of the first and third evaporation sources with respect to the second direction is set by using an angle control plate in a horizontal direction or by inclining the first and third evaporation sources to the second evaporation source side located between them And controlling the temperature of the organic light emitting device. The method of claim 4,
Wherein a set of evaporation sources including the first to third evaporation sources is repeatedly arranged in the second direction so that the first to third evaporation regions are overlapped with the adjacent evaporation regions on the substrate to be repeated in the second direction And a second electrode formed on the second electrode. The first to third evaporation sources each including the first to third evaporation materials and arranged to overlap with each other in the first direction while being spaced apart in the second direction perpendicular to the first direction which is the scanning direction of the substrate, using,
Wherein the first to third evaporation sources are co-deposited on the substrate, and the first to third evaporation regions are equally overlapped in the first direction, Wherein the first to third deposition materials are co-deposited with each other. The method of claim 8,
Wherein the first evaporation source deposits a first host material, the second evaporation source deposits a dopant material, and the third evaporation source deposits a third host material on the first substrate, Wherein a light emitting layer in which a host material and a dopant material are mixed is formed in a single layer structure. The method of claim 9,
Wherein the deposition angles of the first to third evaporation sources are controlled to be equal to each other in the first direction. The method of claim 9,
Wherein the first to third evaporation regions of each of the first to third evaporation sources overlap or partially overlap with each other in the second direction of the substrate so as to be equal to each other. The method of claim 11,
The outer deposition angles of the first and third deposition sources located outside the first through third deposition sources are set to be larger than the inner deposition angle so as to overlap the first through third deposition areas in the second direction Wherein the first electrode layer and the second electrode layer are formed on the substrate. The method of claim 12,
The outer deposition angle of the first and third evaporation sources with respect to the second direction is set by using an angle control plate in the horizontal direction or by inclining the first and third evaporation sources to the second evaporation source side located between them Wherein the organic light emitting layer is formed on the substrate. The method of claim 11,
Wherein a set of evaporation sources including the first to third evaporation sources is repeatedly arranged in the second direction so that the first to third evaporation regions are overlapped with the adjacent evaporation regions on the substrate to be repeated in the second direction Gt; < tb >< / TABLE >

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