KR20140075305A - Method for cleaning wafer - Google Patents

Method for cleaning wafer Download PDF

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Publication number
KR20140075305A
KR20140075305A KR1020120143524A KR20120143524A KR20140075305A KR 20140075305 A KR20140075305 A KR 20140075305A KR 1020120143524 A KR1020120143524 A KR 1020120143524A KR 20120143524 A KR20120143524 A KR 20120143524A KR 20140075305 A KR20140075305 A KR 20140075305A
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KR
South Korea
Prior art keywords
cleaning
wafer
edge
wafer surface
spraying
Prior art date
Application number
KR1020120143524A
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Korean (ko)
Inventor
정은도
Original Assignee
주식회사 엘지실트론
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Publication date
Application filed by 주식회사 엘지실트론 filed Critical 주식회사 엘지실트론
Priority to KR1020120143524A priority Critical patent/KR20140075305A/en
Publication of KR20140075305A publication Critical patent/KR20140075305A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A wafer cleaning method according to the embodiment includes a step of performing a first surface cleaning process which cleans a wafer by injecting a cleaning solution to the surface of a wafer; a step of performing an edge cleaning process which cleans the wafer by injecting HF as a cleaning solution to the edge region of the wafer; and a step of performing a second surface cleaning process which cleans the wafer by injecting a cleaning solution to the surface of the wafer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

The present invention relates to a cleaning method of a wafer, and more particularly, to a cleaning method capable of effectively removing contaminants such as metal and particles by increasing the efficiency of cleaning the edge area as well as the surface area of the wafer.

As the chip size has recently become finer, the cleanliness of the wafer edge area has become important. In the semiconductor wafer fabrication process, edge contact occurs in various ways, and after the edge contact, contamination by metal and particles of the wafer edge may occur.

It is necessary to improve the metal contamination of the wafer edge region.

Embodiments of the present invention seek to propose a method that can increase the cleaning efficiency for the wafer edge as well as the wafer surface in cleaning manufactured wafers.

A wafer cleaning method of this embodiment is a method of cleaning a wafer, comprising: performing a first surface cleaning to clean a wafer by spraying a cleaning liquid onto the wafer surface; Performing an edge cleaning process for cleaning the wafer by spraying HF as a cleaning liquid to an edge area of the wafer; And performing a second surface cleaning to clean the wafer by spraying a cleaning liquid onto the wafer surface.

The edge cleaning process may be a cleaning process for a wafer edge area having a length within a range of 2% of the radius of the wafer.

According to the wafer cleaning method of the embodiment as proposed, it is possible to remove contamination of metal and particles with respect to the wafer edge area as well as the wafer surface, thereby improving the quality of the manufactured wafer.

1 is a flowchart briefly showing a wafer cleaning method of this embodiment.
2 is a flowchart showing each of the wafer cleaning methods of this embodiment in more detail.
3 is a view showing a device configuration for cleaning the surface and edge areas of the wafer according to the present embodiment.
4 is a view for explaining a wafer edge area to be cleaned according to the present embodiment.
5 is a graph of experimental data showing that wafer impurities are effectively removed by the wafer cleaning method according to the present embodiment.

Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings. It should be understood, however, that the scope of the inventive concept of the present embodiment can be determined from the matters disclosed in the present embodiment, and the spirit of the present invention possessed by the present embodiment is not limited to the embodiments in which addition, Variations.

Fig. 1 is a flowchart briefly showing the wafer cleaning method of the present embodiment. Fig. 2 is a flowchart showing each of the wafer cleaning methods in this embodiment in more detail. Fig. 3 is a cross- FIG. 4 is a view for explaining a wafer edge area to be cleaned according to the present embodiment. FIG.

First, referring to FIG. 1, the wafer cleaning method of the present embodiment is performed after grinding processing such as polishing on both sides of the wafer, and mainly includes cleaning (S100) on the wafer surface, cleaning (S200) on the wafer edge region, And secondary cleaning (S300) on the wafer surface.

The ingot produced through the ingot growing apparatus is cut into a plurality of wafers by a wire saw apparatus, and then a grinding process such as grinding and polishing is performed several times, during which a plurality of wafer edge contacts are generated, Metal contamination of the wafer edge region, and the like.

In a cleaning process for a manufactured wafer, the present invention includes wafer surface cleaning through the injection nozzles located above and below the center of the wafer, and wafer edge cleaning through the edge portion jetting nozzles for spraying the solution to the wafer edge region do.

In detail, referring to Fig. 2, a method of first wafer surface cleaning, edge cleaning and second wafer surface cleaning shown in Fig. 1 will be described. In the first and second wafer surface cleaning, The structure is shown in Fig.

As shown in FIG. 3, the single-type cleaning apparatus includes main spray nozzles 11 and 12 for cleaning the wafer surface (wafer center area) Sub spray nozzles 21 and 22 for spraying the solution to the edge regions of the wafer are respectively disposed on the upper and lower sides of the wafer W and above and below the wafer edge region, respectively.

Particularly, the sub injection nozzles 21 and 22 can be firmly fixed in position and injection direction so that the injection liquid can be injected toward the edge region of the wafer. In the description of the embodiment of the present invention, the term "wafer edge area" can be defined as a range from the edge of the wafer to a position of about 2% of the wafer radius.

For example, as shown in FIG. 4, if the radius of the wafer to be cleaned is 147 mm, the region to which the solution injected by the sub-injection nozzles 21 and 22 is injected is a wafer edge region corresponding to the wafer edge region To about 3 mm.

Since the jetted liquid ejected from the sub jet nozzles 21 and 22 is different from the jetted liquid ejected from the main jet nozzles 11 and 12 for cleaning the surface of the wafer, .

First, for a wafer having been subjected to a process such as polishing on a wafer surface, a first wafer surface cleaning is performed. While ozone (O 3 ) solution is injected toward the center of the wafer through the main injection nozzles 11 and 12, Cleaning is performed on the wafer surface (S101). Here, the apparatus on which the wafer is mounted rotates upon spraying the solution through the spray nozzle, and the ozone solution injected through the main spray nozzles 11 and 12 gradually flows from the center of the wafer to the edge It spreads while drawing a big circle.

Next, a cleaning process for the edge region of the wafer is performed. The cleaning process for the wafer edge will be described in two embodiments.

First, in the wafer edge cleaning process, cleaning on the wafer surface is not performed. That is, when the injection of the HF solution through the sub injection nozzles 21 and 22 is first made to the edge region of the wafer (S201), and then the HF solution injection through the main injection nozzles 11 and 12 is performed on the wafer surface (S301).

At this time, the HF solution is sprayed to the main injection nozzle after the edge area cleaning by the sub-injection nozzle is completed while the operation of the main injection nozzle is kept off during the injection operation of the sub-injection nozzle . Particularly, the hydrofluoric acid (HF) injected into the sub-injection nozzle and the main injection nozzle has a concentration of at least 0.5 wt% and at most 2 wt%. If the concentration of HF is less than 0.5 wt%, the removal of metal and particles attached to the wafer is not efficiently performed. If the concentration of HF is greater than 2 wt% This is because the surface may be damaged.

On the other hand, at the time of cleaning the wafer edge, the wafer surface may be cleaned together. Although this embodiment is not shown as a flowchart, it is also possible that the above-described S201 step and the S301 step are performed together.

That is, HF is sprayed to the wafer surface through the main injection nozzle, and HF can be sprayed to the wafer edge region through the sub-injection nozzle. Here, the HF concentration should have a concentration in the range as described above.

In both embodiments, cleaning (S101) is performed on the wafer surface before cleaning is performed on the wafer edge, which takes wafer cleaning efficiency into account. That is, since the cleaning liquid flows into the edge region when cleaning the surface, if the edge region is first cleaned, the cleaning efficiency of the edge region may be reduced.

On the other hand, after the cleaning of the wafer edge and the wafer surface by the HF solution is completed, a secondary cleaning process is performed on the wafer surface.

That is, cleaning is performed on the wafer surface by spraying ozone through the main injection nozzle (S302), and then wafer surface cleaning (S303) using the standard cleaning SC1 is performed.

Here, the standard cleaning SC1 is an RCA cleaning method which is a high-temperature wet process using chemical agents of high concentration of strong acid and strong base. The cleaning liquid used for SC1 cleaning is a mixture of ammonia water, hydrogen peroxide and ultrapure water at a temperature of 75 to 90 degrees As a process to proceed, it is a cleaning process in which organic contaminants and metal impurities are removed from the wafer surface by simultaneously and repeatedly performing oxidation of the wafer surface by hydrogen peroxide and micro-etching of the wafer surface by ammonia water.

After the wafer surface cleaning by SC1 is completed, a rinse process is performed on the wafer surface (S304), and then wafer surface cleaning (S305) using standard cleaning SC2 is performed.

Here, SC2 cleaning is also a standard cleaning by the RCA cleaning method, the cleaning liquid used in the SC2 cleaning, using a mixed solution of hydrochloric acid, hydrogen peroxide and ultra pure water 75 to 85 also takes place at a temperature of about, alkali ions (Al 3 +, Fe 3 +, Mg 2 +), Al (OH) 3, Fe (OH) 3, Mg (OH) 2, Zn (OH) 2 , etc. of the washing water further remove residual contaminants not removed from the hydroxide material, SC1 cleaning Process.

After SC2 cleaning is completed, wafer surface cleaning by ozone is further performed (S309), and then a drying process is performed on the wafer surface (S400).

By the cleaning process of this embodiment, not only impurity removal to the wafer surface but also removal of impurities to the wafer edge region can be performed efficiently, which can be confirmed by data through various experiments.

5 is a graph of experimental data showing that wafer impurities are effectively removed by the wafer cleaning method according to the present embodiment.

The first test object is a state in which only the surface cleaning by the main injection nozzle is performed (only the surface is cleaned # 2) before the cleaning process is performed (polishing # 1 before cleaning, # 2 before cleaning) Edge cleaning # 2 and edge cleaning # 2 only), and edge cleaning (edge cleaning # 1, edges only cleaning # 2), and surface cleaning, edge cleaning and surface cleaning (Invention # 1, Invention # 2).

In the case where the cleaning according to the present invention is carried out, it can be seen that the number of metal impurities to be detected is remarkably reduced. Particularly, in the case of metal impurities such as Fe, Na, Al, Mg, Ca and Ti, Is very good.

Claims (5)

A method of cleaning a wafer,
Performing a first surface cleaning to clean the wafer by spraying a cleaning liquid onto the wafer surface;
Performing an edge cleaning process for cleaning the wafer by spraying HF as a cleaning liquid to an edge area of the wafer; And
And performing a second surface cleaning to clean the wafer by spraying a cleaning liquid onto the wafer surface. The method according to claim 1,
Wherein the edge cleaning process is a cleaning process for a wafer edge area corresponding to a length within a range of 2% of the radius of the wafer. The method according to claim 1,
Wherein the first or second surface cleaning process and the edge cleaning process are performed together using an HF cleaning liquid. The method according to claim 1,
Wherein the first surface cleaning is a cleaning process using the ozone solution as a cleaning liquid. The method according to claim 1,
Wherein the second surface cleaning comprises:
Cleaning the wafer with a standard cleaning SC1, and cleaning the wafer with a standard cleaning SC2 after the rinsing step. The method of cleaning a wafer according to claim 1, Way.
KR1020120143524A 2012-12-11 2012-12-11 Method for cleaning wafer KR20140075305A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120143524A KR20140075305A (en) 2012-12-11 2012-12-11 Method for cleaning wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120143524A KR20140075305A (en) 2012-12-11 2012-12-11 Method for cleaning wafer

Publications (1)

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KR20140075305A true KR20140075305A (en) 2014-06-19

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116631849A (en) * 2023-07-21 2023-08-22 山东有研艾斯半导体材料有限公司 Silicon wafer cleaning method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116631849A (en) * 2023-07-21 2023-08-22 山东有研艾斯半导体材料有限公司 Silicon wafer cleaning method
CN116631849B (en) * 2023-07-21 2024-05-07 山东有研艾斯半导体材料有限公司 Silicon wafer cleaning method

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