KR20140068536A - Method of Forming Oxide Semiconductor Film - Google Patents

Method of Forming Oxide Semiconductor Film Download PDF

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Publication number
KR20140068536A
KR20140068536A KR1020120136144A KR20120136144A KR20140068536A KR 20140068536 A KR20140068536 A KR 20140068536A KR 1020120136144 A KR1020120136144 A KR 1020120136144A KR 20120136144 A KR20120136144 A KR 20120136144A KR 20140068536 A KR20140068536 A KR 20140068536A
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KR
South Korea
Prior art keywords
oxide semiconductor
forming
present
substrate
thin film
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Application number
KR1020120136144A
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Korean (ko)
Inventor
류호준
홍용택
지선범
임화림
Original Assignee
한국전자통신연구원
서울대학교산학협력단
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Priority to KR1020120136144A priority Critical patent/KR20140068536A/en
Publication of KR20140068536A publication Critical patent/KR20140068536A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

A method of forming an oxide semiconductor is provided. The method comprises a step of coating a substrate with an oxide semiconductor solution; a step of providing the substrate to an oxygen atom-containing gas atmosphere; and a step of forming the oxide semiconductor solution into an oxide semiconductor film by conducting a thermal treatment process at 300°C or less.

Description

[0001] The present invention relates to a method of forming an oxide semiconductor film,

The present invention relates to a method for forming an oxide semiconductor film, and more particularly to a method for forming an oxide semiconductor thin film at a low temperature.

Recently, as interest in flexible, bendable and non-bendable flexible displays has increased, development of switching devices suitable for flexible displays is becoming more important. 2. Description of the Related Art [0002] An amorphous silicon (a-Si: H) thin film transistor (TFT) used mainly in a liquid crystal display (LCD), an organic thin film transistor Organic TFT: OTFT), and recently, an oxide semiconductor thin film transistor using an oxide semiconductor such as zinc oxide (ZnO) has attracted much attention.

However, the amorphous silicon thin film transistor and the organic thin film transistor, which are undergoing much research at present, have a charge mobility of 0.1 to 1.0 cm 2 / Vs, which is a capability of transferring electric charge, low. Therefore, such thin film transistors are not easy to apply as a pixel constituent element of an organic light emitting diode (OLED), which is a current driving type, and are difficult to apply because of electrical reliability problems. In recent years, much attention has been focused on oxide semiconductor thin film transistors whose charge mobility is more than 10 cm 2 / Vs and whose electrical reliability characteristics are superior to those of amorphous silicon thin film transistors and organic thin film transistors.

In order to form a solution type oxide semiconductor thin film, a high temperature heat treatment at 300 캜 or more is required. Through this heat treatment, charges can be increased in the oxide semiconductor thin film. This is because charges of a certain level or more must be present in the oxide semiconductor thin film to use it as a semiconductor material. Further, the oxide semiconductor thin film changes the charge concentration in the oxide semiconductor thin film due to oxygen (O 2 ) and / or moisture (H 2 O) in the atmosphere, which causes deterioration of the oxide semiconductor thin film.

Accordingly, in order to form a solution type oxide semiconductor thin film requiring a high-temperature heat treatment, selection of the lower substrate is limited, and circuit patterns formed on the lower layers in the lower substrate due to the heat treatment at a high temperature are deteriorated, There is a problem that can not be done. This problem is directly related to the reliability problem of the product.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of forming an oxide semiconductor thin film at a low temperature.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, the present invention provides a method for forming an oxide semiconductor film. The method includes the steps of applying an oxide semiconductor solution on a substrate, providing the substrate in a gas atmosphere containing oxygen atoms, and performing a heat treatment process at 300 ° C or lower to form an oxide semiconductor solution into an oxide semiconductor film can do.

The gas containing an oxygen atom may contain oxygen or moisture.

And increasing the concentration of oxygen atoms in the gas.

The substrate may comprise a conductive material.

And applying a bias to the other surface opposite to one surface of the substrate to which the oxide semiconductor solution is applied.

And forming an insulating layer on the substrate before applying the oxide semiconductor solution.

As described above, according to the present invention, since the oxide semiconductor film is formed by provision of a gas containing oxygen atoms and / or application of an artificial bias, not only the underlying circuit patterns are not deteriorated, Can be formed by low thermal energy. Thus, a method of forming an oxide semiconductor film applicable on a flexible or stretchable substrate can be provided. Such a method of forming an oxide semiconductor film can be applied to various industrial fields because it can overcome limitations of existing materials and methods in various fields such as a display, a memory, and a solar cell.

1 is a cross-sectional view illustrating a method of forming an oxide semiconductor film according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a method of forming an oxide semiconductor film according to another embodiment of the present invention.
3 is a cross-sectional view illustrating a method of forming an oxide semiconductor film according to another embodiment of the present invention.
4 is a cross-sectional view illustrating a method of forming an oxide semiconductor film according to another embodiment of the present invention.
5 is a cross-sectional view illustrating a method of forming an oxide semiconductor film according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in different forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the concept of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms 'comprises' and / or 'comprising' mean that the stated element, step, operation and / or element does not imply the presence of one or more other elements, steps, operations and / Or additions. In addition, since they are in accordance with the preferred embodiment, the reference numerals presented in the order of description are not necessarily limited to the order. In addition, in this specification, when it is mentioned that a film is on another film or substrate, it means that it may be formed directly on another film or substrate, or a third film may be interposed therebetween.

In addition, the embodiments described herein will be described with reference to cross-sectional views and / or plan views, which are ideal illustrations of the present invention. In the drawings, the thicknesses of the films and regions are exaggerated for an effective description of the technical content. Thus, the shape of the illustrations may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include changes in the shapes that are generated according to the manufacturing process. For example, the etched area shown at right angles may be rounded or may have a shape with a certain curvature. Thus, the regions illustrated in the figures have schematic attributes, and the shapes of the regions illustrated in the figures are intended to illustrate specific types of regions of the elements and are not intended to limit the scope of the invention.

1 is a cross-sectional view illustrating a method of forming an oxide semiconductor film according to an embodiment of the present invention.

Referring to FIG. 1, an oxide semiconductor solution 130 is coated on a substrate. The substrate may comprise an electrode layer 110 and / or an insulating layer 120. Although not shown, underlayers may be provided within the substrate, each including circuit patterns.

The substrate to which the oxide semiconductor solution 130 is applied is provided in an atmosphere of a gas 140 containing oxygen atoms (O). The gas 140 comprising oxygen atoms may comprise oxygen or moisture. That is, the gas 140 containing oxygen atoms may be atmospheric.

When the surface of the oxide semiconductor thin film is exposed to the atmosphere, oxygen and moisture in the atmosphere react with the oxide semiconductor and may act as a factor to deteriorate the characteristics of the oxide semiconductor. On the other hand, oxygen and moisture can affect the acceleration of the metal-oxide reaction by lowering the activation energy necessary for the precursor in the oxide semiconductor solution 130 to form a metal-oxide thin film. Accordingly, when the oxide semiconductor solution 130 is heat-treated at the same temperature, more charges can be formed in the oxide semiconductor thin film.

The oxide semiconductor solution 130 is formed of an oxide semiconductor thin film by performing a heat treatment process at 300 ° C or less. That is, the oxide semiconductor thin film can be formed without a high-temperature heat treatment by providing the substrate coated with the oxide semiconductor solution 130 in a gas atmosphere containing oxygen atoms.

2 to 5, a method of forming an oxide semiconductor film according to each of the other embodiments of the present invention will be described. 2 to 5 are cross-sectional views illustrating a method of forming an oxide semiconductor film according to another embodiment of the present invention. The same reference numerals are used for the elements described in the embodiment of the present invention, and a detailed description thereof will be omitted.

The method for forming an oxide semiconductor film according to another embodiment of the present invention, which is described with reference to FIG. 2, differs from the method for forming an oxide semiconductor film according to the embodiment of the present invention described above, The concentration of oxygen atoms is high.

The higher the concentration of oxygen atoms in the gas 140 containing oxygen atoms, the more the metal-oxide reaction in the oxide semiconductor solution 130 can be accelerated. Accordingly, when the oxide semiconductor solution 130 is heat-treated at the same temperature, more charges can be formed in the oxide semiconductor thin film.

The method for forming an oxide semiconductor film according to still another embodiment of the present invention described with reference to FIG. 3 is different from the method for forming an oxide semiconductor film according to the embodiment of the present invention in that the oxide semiconductor solution 130 is applied A bias 150 is applied to the electrode layer 110 on the other side of the substrate and the bias 150 is applied to the oxide semiconductor solution 130 indirectly.

When a bias is applied to the electrode layer 110 on the other side of the substrate, the gases 140 containing oxygen atoms can be adsorbed on the surface of the oxide semiconductor solution 130. That is, the probability that the gas 140 containing oxygen atoms is in contact with the oxide semiconductor solution 130 increases, so that the metal-oxide reaction in the oxide semiconductor solution 130 can be further accelerated. Accordingly, when the oxide semiconductor solution 130 is heat-treated at the same temperature, more charges can be formed in the oxide semiconductor thin film.

The method for forming an oxide semiconductor film according to another embodiment of the present invention, which is described with reference to FIG. 4, differs from the method for forming an oxide semiconductor film according to the embodiment of the present invention described above, A bias 150 is applied to the electrode layer 110 on the other side opposite to one surface of the substrate on which the oxide semiconductor solution 130 is applied and the bias 150 is indirectly applied to the oxide semiconductor solution 130. [ .

As the concentration of oxygen atoms in the gas 140 containing oxygen atoms increases and a bias is applied to the electrode layer 110 on the other side of the substrate, the gases 140 containing oxygen atoms are removed from the oxide semiconductor solution 130 More adsorbed on the surface. That is, the probability that the gases 140 containing oxygen atoms are in contact with the oxide semiconductor solution 130 becomes higher, and the metal-oxide reaction in the oxide semiconductor solution 130 can be further accelerated. Accordingly, when the oxide semiconductor solution 130 is heat-treated at the same temperature, more charges can be formed in the oxide semiconductor thin film.

The method for forming an oxide semiconductor film according to another embodiment of the present invention described with reference to FIG. 5 differs from the method for forming an oxide semiconductor film according to the above-described embodiment of the present invention, A bias 150 is applied to the electrode layer 110 on the other side opposite to one surface of the substrate to which the oxide semiconductor solution 130 is applied while the concentration of oxygen atoms is high, The bias 150 is directly applied to the oxide semiconductor solution 130 because it does not include an insulating layer (see 120 in FIG. 1, FIG. 2, FIG. 3 or FIG.

As the concentration of oxygen atoms in the gas 140 containing oxygen atoms increases and a stronger bias is applied to the electrode layer 110 on the other side of the substrate, the gases 140 containing oxygen atoms are removed from the oxide semiconductor solution 130 Lt; RTI ID = 0.0 > a < / RTI > That is, the probability that the gases 140 containing oxygen atoms are in contact with the oxide semiconductor solution 130 becomes higher, and the metal-oxide reaction in the oxide semiconductor solution 130 can be further accelerated. Accordingly, when the oxide semiconductor solution 130 is heat-treated at the same temperature, more charges can be formed in the oxide semiconductor thin film.

The oxide semiconductor thin film formed by the method according to the embodiments of the present invention has charges enough to be utilized as a semiconductor layer therein by provision of a gas containing oxygen atoms and / or application of an artificial bias, The patterns may not be degraded, but may be formed by a small amount of thermal energy. Thus, a method of forming an oxide semiconductor thin film applicable on a flexible or stretchable substrate can be provided. Such a method of forming an oxide semiconductor film can be applied to various industrial fields because it can overcome limitations of existing materials and methods in various fields such as display, memory, and solar cell.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative and non-restrictive in every respect.

110: electrode layer
120: insulating layer
130: oxide semiconductor solution
140: a gas containing an oxygen atom
150: Bias

Claims (1)

Applying an oxide semiconductor solution on a substrate;
Providing the substrate in a gaseous atmosphere comprising oxygen atoms; And
And performing a heat treatment process at 300 DEG C or lower to form the oxide semiconductor solution into an oxide semiconductor film.
KR1020120136144A 2012-11-28 2012-11-28 Method of Forming Oxide Semiconductor Film KR20140068536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120136144A KR20140068536A (en) 2012-11-28 2012-11-28 Method of Forming Oxide Semiconductor Film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120136144A KR20140068536A (en) 2012-11-28 2012-11-28 Method of Forming Oxide Semiconductor Film

Publications (1)

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KR20140068536A true KR20140068536A (en) 2014-06-09

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