KR20140056881A - Lead frame of surface conducting type and method of manufacturing light emitting device package using the same and lead frame array by surface conducting type - Google Patents

Lead frame of surface conducting type and method of manufacturing light emitting device package using the same and lead frame array by surface conducting type Download PDF

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Publication number
KR20140056881A
KR20140056881A KR1020120123321A KR20120123321A KR20140056881A KR 20140056881 A KR20140056881 A KR 20140056881A KR 1020120123321 A KR1020120123321 A KR 1020120123321A KR 20120123321 A KR20120123321 A KR 20120123321A KR 20140056881 A KR20140056881 A KR 20140056881A
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South Korea
Prior art keywords
lead frame
substrate
layer
insulating layer
reflective layer
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KR1020120123321A
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Korean (ko)
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김종만
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일진엘이디(주)
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Priority to KR1020120123321A priority Critical patent/KR20140056881A/en
Publication of KR20140056881A publication Critical patent/KR20140056881A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

Suggested are a surface conduction-type lead frame which has high connection reliability with an electrode, enables flexible connection, and utilizes the role of a reflection layer, a method of manufacturing a light emitting element package using the same, and a surface conduction-type lead frame array thereof. The frame, the manufacturing method, and the array include: a primer layer which is applied on an insulation layer covering a substrate and the front surface of a connection terminal and exposes the insulation layer at certain intervals along the boundary of the substrate; and a reflection layer which is applied on the front surface of the primer surface and includes an LED chip at one side separated by the insulation layer. The reflection layer is patterned using a mask and spatially separated by the insulation layer. The connection terminal connects the reflection layer of which the entire part is conductive and the lead frame formed by electroplating in series or in series-parallel and is connected to an arbitrary position in the height or in the height and width of the lead frame.

Description

TECHNICAL FIELD [0001] The present invention relates to a lead frame of a surface conduction type, a method of manufacturing a light emitting device package using the same, and a lead frame array using a surface conduction type }

The present invention relates to a lead frame, a method of manufacturing a light emitting device package using the same, and a lead frame array. More particularly, the present invention relates to a lead frame in which the entire reflective layer is operated by a surface conduction method, And more particularly to a conductive lead frame array.

2. Description of the Related Art A lead frame for a light emitting device package is widely used as components of various display and illumination packages using a light emitting element as a light source. In order to prevent deterioration of the light emitting device and its peripheral parts due to external factors such as heat, moisture, oxidation, etc., the light emitting device package is provided with a lead frame on a substrate, And the periphery thereof is sealed with resin. However, when the LED element is used as a light source, the reflective layer of the lead frame is required to have a high reflectance (for example, a reflectance of 80% or more) in the entire region of visible light wavelength (400 to 700 nm). Further, when an LED element is used as a light source of a measuring and analyzing instrument using ultraviolet rays, a high reflectance is a very important factor for the reflective layer in the near-ultraviolet region (wavelength: 340 to 400 nm).

The lead frame is for connection with electrodes and has various forms. When the substrate is a metal, an insulating layer including an inner wall formed by a drilling, a punching, a routing process, or the like is usually formed or used, or the lead frame is bent with respect to the substrate to connect the electrode. However, in the conventional lead frame, a portion which is electrically connected to the electrode tends to cause a contact failure, and the shape of the lead frame for connection with the electrode is very limited according to the light emitting device package. Accordingly, a connection reliability with the electrode is high, connection is free, and a method of securing the role of the reflective layer to the maximum is required.

A problem to be solved by the present invention is to provide a surface conduction type lead frame which has high connection reliability with electrodes, is free to connect, and can fully utilize the role of a reflective layer. Another object of the present invention is to provide a method of manufacturing a light emitting device package using the lead frame and a lead frame array using a surface conduction method.

A lead frame of a surface conduction type for solving the problems of the present invention comprises a substrate connected by a connection terminal, an insulating layer covering a front surface of the substrate of the substrate and the connection terminal, And a reflective layer on the front surface of the primer layer, the reflective layer being mounted on one side separated by the insulating layer.

In the substrate of the present invention, the connection terminal may be made of the same material as the substrate and integral with the substrate, the insulating layer is a linear pattern, and the substrate and the primer layer are preferably made of a metal material, (Ag), gold (Au), nickel (Ni), aluminum (Al) or an alloy thereof is preferable, and silver or silver alloy is more preferable.

A method of manufacturing a light emitting device package including a lead frame of a surface conduction type for connecting the substrate to a connection terminal. Thereafter, an insulating layer is formed on the substrate and the connection terminal connected to the connection terminal. A mask patterned at predetermined intervals along the periphery of the substrate is disposed on the insulating layer. A primer layer is deposited on the insulating layer on which the mask is disposed. After removing the mask, a reflective layer is formed. The LED chip is mounted on the reflective layer, and the LED chip is sealed with a plug.

In the manufacturing method of the present invention, the reflective layer may be spatially separated by the insulating layer, and the reflective layer may be formed of Ag, Au, Ni, Al, And may be any one selected from among silver and silver alloys.

In a preferred method of the present invention, the mask may be a linear pattern across the substrate, and may further comprise attaching an anti-plating material to the insulating layer prior to forming the reflective layer, And then removing the mask after electroplating in a state where the mask is not removed.

A lead frame array of a surface conduction type for solving the problems of the present invention includes a lead frame made of a reflective layer which is spatially separated by an insulating layer and which is a conductive layer as a whole and the lead frame is connected in series or in series and in parallel, And a connection terminal connected to any position of the vertical width or the horizontal width of the terminal. At this time, it is possible to reduce the resistance and improve the connection reliability by adjusting the width of the connection terminal.

According to the lead frame of the surface conduction type of the present invention, the method of manufacturing the light emitting device package using the same, and the lead frame array of the surface conduction type, the primer layer patterned by plating and vapor deposition on the substrate coated with the insulating layer, The lead frame, which is implemented in a conductive manner, and the light emitting device package using the lead frame are highly reliable in connection with the electrodes, are free to connect, and can maximally utilize the role of the reflective layer. In addition, since the lead frame is manufactured by the surface conduction method using the coating film by plating and vapor deposition, the heat can be easily discharged to the outside of the lead frame without being filled in the lead frame. Further, since the surface conduction type is adopted, the connection terminal can be freely connected to the position, and the width of the connection terminal can be adjusted to reduce the electrical resistance, thereby improving the conductivity and securing the reliability of the connection. In addition, since the package can be manufactured by cutting the connection terminals, it is easy to manufacture a desired number of series or series-parallel packages.

1 is a perspective view illustrating a light emitting device package including a lead frame of a surface conduction type according to the present invention.
2A to 2E are cross-sectional views illustrating a method of manufacturing a light emitting device package including a lead frame of a surface conduction type according to the present invention.
3A is a plan view showing a lead frame array connected in series by the surface conduction method according to the present invention.
3B is a plan view showing a lead frame array connected in series and in parallel by the surface conduction method according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments described below can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to enable those skilled in the art to more fully understand the present invention.

Embodiments of the present invention can realize a surface conduction method by forming a primer layer and a reflective layer patterned by plating and vapor deposition on a substrate on which an insulating layer is formed and thereby the connection reliability with the electrode is high, A lead frame of a surface conduction type which can freely utilize the role of a reflective layer, a method of manufacturing a light emitting device package using the same, and a lead frame array using a surface conduction method. For this purpose, a method of fabricating a lead frame connecting with an electrode by a surface conduction method has been studied. Through this, it is confirmed that the reliability of connection with the electrode is improved and the process of maximizing the use of the reflection layer is confirmed. Let's see how this works.

1 is a perspective view illustrating a light emitting device package including a lead frame of a surface conduction type according to an embodiment of the present invention.

1, a lead frame 50 of the package of the present invention is electrically connected by a connection terminal 1 (40), and each lead frame 50 has an insulating layer (not shown) covering the entire surface of the substrate (12) and a reflective layer (18). The LED chip 20 is mounted on one side of the reflective layer 18 electrically separated along the periphery of the substrate 10 by the insulating layer 12 and one of the wires 22 is mounted on the LED chip 20 And the other wire 22 is connected to the reflective layer 18 on which the LED chip 20 is not mounted. The LED chip 20 and the wire 22 are covered with the plug 30 molded with a transparent resin. At this time, the reflective layer 18 is preferably made of any one selected from silver (Ag), silver alloy, gold (Au), gold alloy, nickel (Ni), nickel alloy, aluminum (Al) Silver or a silver alloy is more preferable.

The connection terminal 1 40 is for making an electrical connection with the lead frame 50 of the present invention by a surface conduction method and has the same material as the substrate 10 and is manufactured integrally with the substrate 10, It is preferable that the same process is performed with the substrate 10 in the process of manufacturing the frame 50. [ The role of the connection terminal will be described in detail later with reference to Figs. 3A and 3B. That is, the connection terminals connect the lead frames 50 in series or in series and parallel. For convenience of explanation, only the case where the connection terminals are arranged in series by the connection terminal 1 (40) is adopted as shown in FIG.

The entire reflective layer 18 except the insulating layer 12 is electrically conductive while covering the entire surface of the substrate 10 and the connection terminal 1 40 according to the embodiment of the present invention. In this way, it is referred to as a surface conduction method in which the entire reflective layer 18 covering the substrate 10 and the connection terminal 1 40 has conductivity and enables electrical connection. Accordingly, since the wire 22 can be connected to any part of the reflection layer 18, the wire 22 can be variously designed for connection. In addition, since the lead frame 50 is not required to be formed at predetermined intervals in advance to connect the lead frame 50 and the wire 22, the process of manufacturing the lead frame 50 can be simplified.

2A to 2E are cross-sectional views illustrating a method of manufacturing a light emitting device package including a lead frame of a surface conduction type according to an embodiment of the present invention.

2A, the substrate 10 made of a metal is connected by the connection terminal 1 (40). The insulating layer 12 is formed on the substrate 10 including the connection terminal 1 40 by anodic oxidation or electroplating. The substrate 10 can be made of copper or a copper alloy, iron or an iron alloy, aluminum or an aluminum alloy. Such a material can be easily formed by plating or vapor deposition, 20 to the outside of the substrate 10 easily. The insulating layer 12 is formed by, for example, immersing the substrate 10 made of aluminum or an aluminum alloy in an electrolytic solution such as boric acid, phosphoric acid, sulfuric acid, chromic acid, etc., applying a positive electrode to the substrate 10, and applying a negative electrode to the electrolytic solution . At this time, an aluminum anodic oxide film (Al 2 O 3 ) having a relatively high heat transfer characteristic of about 10 to 30 W / mK is formed on the surface of the substrate 10.

2B, a mask 14 patterned at predetermined intervals along the periphery of the substrate 10 is disposed on the insulating layer 12. [ At this time, the mask 14 is provided to provide the insulating layer 12 for separating the reflective layer 18 described in FIG. Accordingly, the mask 14 serves to separate the reflective layer 18, so that the mask 14 is preferably a linear pattern across the substrate 10, the width of which depends on the type and form of the package of the present invention Can be determined.

2C, a primer layer 16 made of a metal is formed by evaporation to form the reflective layer 18 on the insulating layer 12 on which the mask 14 is disposed. The primer layer 16 is made of a metal selected from the group consisting of nickel, a nickel alloy, cobalt, a cobalt alloy, a copper and a copper alloy, or an alloy thereof, and may be formed of at least one layer. However, in consideration of productivity, it is preferable to make two or less layers, and when two or more primer layers 16 are used, the thicknesses of the respective layers may be the same or different.

2D, the reflective layer 18 is formed by electroplating with the mask 14 removed. The reflective layer 18 is preferably made of any one selected from among silver (Ag), gold (Au), nickel (Ni), aluminum (Al), and alloys thereof, more preferably silver or silver alloy. Silver alloys, silver-nickel alloys, silver-selenium alloys, silver-antimony alloys, silver-rhodium alloys, silver-ruthenium alloys, silver- And may be any alloy made of a group of platinum alloys. At this time, since the reflecting layer 18 is formed by electroplating even if the mask 14 is removed and the insulating layer 12 is exposed, the reflecting layer 18 is not formed on the insulating layer 12. The fryer layer 16 becomes the primer layer pattern 16a patterned in the shape of the mask 14 and the reflective layer 18 is patterned in the shape of the mask 14 on the primer layer pattern 16a.

On the other hand, in order to prevent the trace of the reflective layer 18 from remaining on the insulating layer 12 when the mask 14 is removed and electroplating, a plating preventing material, for example, It is possible to attach an insulating tape. That is, when the insulating tape is attached to the insulating layer 12 before the electroplating, and then the insulating tape is removed after the electroplating, no trace of the reflecting layer 18 is left on the insulating layer 12. At this time, the anti-plating substance may be removed after electroplating and may be any substance that is not electroplated.

The reflective layer 18 is formed by electroplating on the primer layer 16 without removing the mask 14 and then the mask 14 is removed to remove the primer layer pattern 16a and the reflective layer 16b, (18) can be formed. As described above, when the reflective layer 18 is formed without removing the mask 14, traces of the reflective layer 18 can be prevented from remaining on the insulating layer 12. However, if the reflection layer 18 is plated without removing the mask 14, since the reflection layer 18 is applied to the mask 14, the cost can be increased as compared with the case where the mask 14 is removed.

2E, the LED chip 20 is mounted on one side of the reflective layer 18 electrically separated by the insulating layer 12, and one of the wires 22 is mounted on the reflective layer 18 And the other wire 22 is connected to the reflective layer 18 on which the LED chip 20 is not mounted. The LED chip 20 and the wire 22 are molded using a transparent resin to form the plug 30. The entire reflective layer 18 except the insulating layer 12 has electrical conductivity while covering the entire surface of the substrate according to the embodiment of the present invention. The surface conductive type in which the entire reflective layer 18 covering the substrate has conductivity and enables electrical connection.

3A is a plan view showing a lead frame array connected in series by a surface conduction method according to an embodiment of the present invention. 3B is a plan view showing a lead frame array connected in series and in parallel by a surface conduction method according to an embodiment of the present invention. In this case, the serial connection and the serial-parallel connection represent the unit structure, and the actual package can be manufactured by extending it.

Referring to FIG. 3A, the lead frames 1 and 2 are connected in series by connection terminals 1 (40 in FIG. 1). Since the lead frames 1 and 2 are of the surface conduction type, the connection terminal 1 (40) can be located anywhere in the X-range (referred to as " the longitudinal width of the lead frame "). In other words, since the reflective layer 18 of the lead frames 1 and 2 has conductivity at all portions, the lead terminals 1 and 2 can be electrically connected to the connection terminal 1 (40) at any position in the longitudinal width of the lead frame . In this way, the connection terminal 1 (40) can be freely connected to the lead frame 1 and the lead frame 2 can be freely designed according to the package type. Further, the width of the connection terminal 1 (40) can be increased to reduce the resistance, thereby improving the conductivity and securing the reliability of the connection.

Referring to FIG. 3B, the lead frames 1 and 2 and the lead frames 3 and 4 are connected in series as shown in FIG. 3A, and the lead frames 1 and 3 and the lead frames 2 and 4 are connected in parallel. In this case, the connection terminals 2 (42) connected in parallel serve the same function and function as the connection terminals 1 (40) of FIG. 3A, and are arranged at arbitrary positions in the Y range (referred to as "width of the lead frame" can do. As described above, the connecting positions of the connection terminals 1 and 2 (42) can be freely set in accordance with the longitudinal width and the lateral width, so that the lead frames 1, 2, 3 and 4 can be freely designed. Further, the widths of the connection terminals 1 and 40 (2) and 40 (2) can be increased to reduce the resistance, thereby improving the conductivity and ensuring the reliability of connection.

The lead frame array of the surface conduction type according to the embodiment of the present invention can freely design the connection terminal for electrically connecting the lead frames according to the package type by using the entire reflective layer 18 as the conductive layer. Further, since the widths of the connection terminals can be increased, the electrical resistance can be reduced, and the connection portion can be widened, so that the reliability of the connection is enhanced. Furthermore, since the package can be manufactured by cutting the connection terminals, it is easy to manufacture a desired number of series or series-parallel packages.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but many variations and modifications may be made without departing from the scope of the present invention. It is possible.

10; A substrate 12; Insulating layer
14; Mask 16; Primer layer
18; Reflective layer 20; LED chip
22; Wire 30; The bag body
40, 42; Connection terminal

Claims (18)

A substrate connected by a connection terminal;
An insulating layer covering the front surface of the substrate and the connection terminal;
A primer layer applied on the insulating layer and exposing the insulating layer at predetermined intervals along the periphery of the substrate; And
And a reflective layer which is applied to the front surface of the primer layer and on which the LED chip is mounted, the LED chip being separated by the insulating layer. The surface conduction type lead frame according to claim 1, wherein the connection terminal is made of the same material as the substrate, and is integrated with the substrate. The surface conduction type lead frame according to claim 1, wherein the insulating layer is a linear pattern. The surface conduction type lead frame according to claim 1, wherein the substrate and the primer layer are made of a metal. The surface conduction type lead frame according to claim 1, wherein the reflective layer is any one selected from silver (Ag), gold (Au), nickel (Ni), aluminum (Al), and alloys thereof. 6. The lead frame of claim 5, wherein the reflective layer is one selected from the group consisting of silver and a silver alloy. Connecting a substrate to a connection terminal;
Forming an insulating layer on the connection terminal and the substrate;
Disposing a patterned mask on the insulating layer at predetermined intervals along the periphery of the substrate;
Depositing a primer layer on the insulating layer on which the mask is disposed;
Forming a reflective layer after removing the mask; And
And a step of mounting the LED chip on the reflective layer and sealing the LED chip with a sealing material. 8. The method according to claim 7, wherein the substrate and the primer layer are made of a metal. The method of manufacturing a light emitting device package according to claim 7, wherein the insulating layer is formed of any one selected from anodic oxidation and electroplating. 8. The method according to claim 7, wherein the reflective layer is formed by electroplating. 8. The method of claim 7, wherein the reflective layer is spatially separated by the insulating layer. A surface conduction type lead frame according to claim 7, wherein the reflective layer is one selected from the group consisting of silver (Ag), gold (Au), nickel (Ni), aluminum (Al) A method of manufacturing a light emitting device package. 13. The method of claim 12, wherein the reflective layer is one selected from the group consisting of silver and a silver alloy. 8. The method of claim 7, wherein the mask is a linear pattern ensuring a predetermined distance along the periphery of the substrate. The method according to claim 7, further comprising the step of attaching a plating preventing material to the insulating layer before forming the reflective layer. 8. The method according to claim 7, wherein the reflective layer is formed by electroplating without removing the mask, and then removing the mask. A lead frame spatially separated by an insulating layer and made of a reflective layer whose entirety is a conductive layer; And
And a connection terminal which connects the lead frames in series or series-connected, and which is connected to any one of a vertical width or a vertical width and a horizontal width of the lead frame. 18. The lead frame array of claim 17, wherein the width of the connection terminal is adjusted to reduce the resistance and improve the connection reliability.
KR1020120123321A 2012-11-02 2012-11-02 Lead frame of surface conducting type and method of manufacturing light emitting device package using the same and lead frame array by surface conducting type KR20140056881A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9935086B2 (en) 2016-03-03 2018-04-03 Samsung Electronics Co., Ltd. Package substrate and light emitting device package
KR102215820B1 (en) * 2019-12-26 2021-02-16 주식회사 반디 Lighting source module for lighting device, and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9935086B2 (en) 2016-03-03 2018-04-03 Samsung Electronics Co., Ltd. Package substrate and light emitting device package
KR102215820B1 (en) * 2019-12-26 2021-02-16 주식회사 반디 Lighting source module for lighting device, and its manufacturing method

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