KR20140035198A - Maskless exposure apparatus and method - Google Patents

Maskless exposure apparatus and method Download PDF

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KR20140035198A
KR20140035198A KR1020120101795A KR20120101795A KR20140035198A KR 20140035198 A KR20140035198 A KR 20140035198A KR 1020120101795 A KR1020120101795 A KR 1020120101795A KR 20120101795 A KR20120101795 A KR 20120101795A KR 20140035198 A KR20140035198 A KR 20140035198A
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South Korea
Prior art keywords
mother substrate
exposure
pattern
deformation
unit
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KR1020120101795A
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Korean (ko)
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KR101999854B1 (en
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문동희
전덕찬
최원철
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엘지디스플레이 주식회사
엘지전자 주식회사
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Priority to KR1020120101795A priority Critical patent/KR101999854B1/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Abstract

Disclosed is a maskless exposure device which can improve reliability. The disclosed maskless exposure device includes a measurement unit for measuring the deformation of a mother board before a maskless exposure process is performed in at least second lithography process and an exposure unit which performs a maskless exposure process based on pattern designs which compensate the deformation of the mother board by the measurement unit.

Description

Maskless exposure apparatus and exposure method {MASKLESS EXPOSURE APPARATUS AND METHOD}

The present invention relates to a photolithography process for forming a thin film of a display device, and more particularly to a maskless exposure apparatus and an exposure method capable of improving reliability.

Recently, liquid crystal display devices and organic light emitting display devices having advantages such as light weight, thinness, and low power consumption are used for office automation devices and audio / video devices.

The liquid crystal display and the organic light emitting display are formed of a plurality of thin films formed by a photolithography process including a deposition process, an exposure process, a developing process, and an etching process. The exposure step selectively exposes the photosensitive film by irradiating the photosensitive film on the substrate with an exposure beam.

In a general exposure process, an exposure beam is selectively irradiated to the photosensitive film by using a mask having a pattern in which the exposure beam is transmitted, semi-transmissive, and non-transmissive.

In recent years, the exposure process is maskless exposure to remove the mask and perform exposure in order to solve the problem of process cost and process time increase due to replacement of the mask depending on the size of the display device and the type of model. The device is being applied.

The maskless exposure apparatus uses a spatial light modulator (SLM), such as a digital micro-mirror device (DMD), to expose an exposure pattern to a substrate in the form of a beam spot array. Warriors At this time, the maskless exposure apparatus selectively turns on / off each spot of the beam spot array in response to the exposure pattern.

However, in a typical maskless exposure apparatus, when a substrate on which a pattern is formed is deformed by shrinkage / expansion by heat through a previous photolithography process, the exposure process is performed based on a pattern design during the previous photolithography process. According to the degree of deformation of the substrate there was a problem that a pattern failure occurs.

An object of the present invention is to provide a maskless exposure apparatus and an exposure method that can improve the reliability.

Maskless exposure apparatus according to an embodiment of the present invention,

Exposure for performing a maskless exposure process based on a measurement unit for measuring deformation of the mother substrate before performing the maskless exposure process in at least a second or later photolithography process and a pattern design for compensating for deformation of the mother substrate by the measurement unit. Contains wealth.

A maskless exposure method according to another embodiment of the present invention,

In the photolithography process after at least a second maskless exposure process based on the measurement of the deformation of the mother substrate prior to performing the maskless exposure process and the pattern design for measuring the deformation of the mother substrate to compensate for the deformation of the mother substrate It includes the step of performing.

When the photolithography process is performed using a maskless exposure apparatus at least after the second time, the deformation of the mother substrate is measured, and the deformation of the mother substrate is compensated before the exposure process of the maskless exposure apparatus according to the measurement result. By converting the pattern design so that the exposure process is performed, the reliability of pattern formation using the maskless exposure apparatus can be improved.

1 is a view schematically showing a four photolithography process according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating a configuration of the maskless exposure apparatus of FIG. 1.
FIG. 3 is a diagram illustrating a DMD control unit and a measurement unit of FIG. 2.
4 is a diagram illustrating a mother substrate including a positioning pattern according to an embodiment of the present invention.
FIG. 5 is a diagram illustrating the positioning pattern and the previous positioning pattern detected by the measurement unit of the present invention in coordinates.
6 is a diagram illustrating a mother substrate including a positioning pattern according to another exemplary embodiment of the present invention.

The present invention provides a maskless exposure process based on a measurement unit for measuring the deformation of the mother substrate before performing the maskless exposure process in at least a second or later photolithography process and a pattern design for compensating for deformation of the mother substrate by the measurement unit. It includes an exposure unit to perform.

In addition, the present invention is based on the step of measuring the deformation of the mother substrate before performing the maskless exposure process in at least a second and subsequent photolithography process and the pattern design to compensate for the deformation of the mother substrate by measuring the deformation of the mother substrate And performing a maskless exposure process.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to the accompanying drawings, embodiments of the present invention will be described in detail.

One embodiment of the present invention is intended to enable a person skilled in the art to fully understand the technical idea of the present invention. Therefore, the present invention is not limited to the embodiments described below, and other embodiments can be added on the basis of the technical idea of the present invention.

1 is a view schematically showing a four photolithography process according to an embodiment of the present invention.

As shown in FIG. 1, a manufacturing process of a display device according to an exemplary embodiment of the present invention is manufactured by four photolithography processes. The display device may be defined as a manufacturing process of an array substrate on which a switching element such as a thin film transistor is formed.

The four photolithography processes include first and second mask exposure apparatuses 110 and 150 that use masks to selectively irradiate an exposure beam onto a substrate, and delete the mask to form a light pattern in the form of a beam spot array. The first and second maskless exposure apparatuses 130 and 170 are transferred to the substrate.

The first maskless exposure apparatus 130 is an exposure apparatus for forming a second pattern on the first pattern formed through the first mask exposure apparatus 110 and a first etching apparatus (not shown).

The second maskless exposure apparatus 170 is an exposure process for forming a fourth pattern on the third pattern formed through the second mask exposure apparatus 150 and the second etching apparatus (not shown).

The first maskless exposure apparatus 130 includes a first measurement unit 131 and a first exposure unit 133 that detect deformation of the mother substrate on which the first pattern is formed.

The second maskless exposure apparatus 170 includes a second measurement unit 171 and a second exposure unit 173 for detecting deformation of the mother substrate on which the third pattern is formed.

Here, the deformation of the mother substrate means the deformation of the mother substrate itself by contraction and expansion of the mother substrate in an environment where high temperature and low temperature are repeated in the photolithography process. That is, the deformation of the mother substrate means the bending including the expansion or contraction to the outside.

The first and second measurement units 131 and 171 detect a change in position of a positioning pattern (not shown) included on the mother substrate.

Each of the first and second exposure units 133 and 173 compensates for the deformation of the mother substrate by converting a pattern design according to the deformation detection result of the mother substrate from each of the first and second measurement units 131 and 171. An exposure process is performed to form the second and fourth patterns.

Here, the first and second exposure units 133 and 173 of the present invention do not change the line width or the pattern width of the pattern, but convert the gap between the adjacent lines or the patterns to correct the pattern formation caused by the deformation of the mother substrate. To compensate.

In the present invention, a four photolithography process of alternately performing the first and second mask exposure apparatuses 110 and 150 and the first and second maskless exposure apparatuses 130 and 170 is described as an example. The photolithography process or the four or more photolithography processes in which the maskless exposure process is performed one or more times after at least a second are also included without limitation.

That is, the first to the third exposure process may be a mask exposure process, the fourth exposure process may be a maskless exposure process. In addition, the first and second exposure processes may be performed in a maskless exposure process, the third and fourth exposure processes may be performed in a mask exposure process, and all exposure processes may be performed only in a maskless exposure process.

The first and second maskless exposure apparatuses 130 and 170 of the present invention will be described in more detail with reference to FIGS. 2 and 3.

2 is a diagram illustrating a configuration of the maskless exposure apparatus of FIG. 1, and FIG. 3 is a diagram illustrating a DMD control unit and a measurement unit of FIG. 2.

As shown in FIGS. 2 and 3, the maskless exposure apparatus 130 includes light sources LS and 232 for providing an exposure beam, a digital micromirror device (DMD) 233, and a beam expander ( BE, 234, multilens arrays (MLA, 235), and projection lenses (PL, 236).

In addition, the maskless exposure apparatus 130 further includes an exposure unit 133 further including DMD controllers C and 231 for controlling the digital micromirror element 233.

In addition, the maskless exposure apparatus 130 further includes a measurement unit (M, 131) for detecting the deformation of the mother substrate provided after the previous mask lithography process.

The digital micromirror element 233 converts the exposure beam provided from the light source 232 to reflect the pattern image for exposing the photosensitive film formed on the mother substrate.

The digital micromirror element 233 is arranged so that a plurality of small unit mirrors can adjust an angle, and reflects light while changing the angle of each unit mirror.

Specifically, the digital micromirror element 233 is formed by arranging a plurality of micromirrors (for example, about 1024 × 768 pieces) that form each pixel on a memory cell in a lattice shape. On the surface of the micromirror, a high reflectance layer such as aluminum is formed.

The digital micromirror element 233 may be driven by an on / off signal from a DMD driver (not shown).

For example, when a memory cell of the digital micromirror element 233 is activated by an ON signal from the DMD driver, the micromirror corresponding to the activated memory cell is inclined at a predetermined angle so that the digital micromirror element ( Light incident on 233 is reflected by the microphone mirror and irradiated onto the beam expander 234.

The beam expander 234 widens the irradiation area of the exposure beam emitted from the digital micromirror element 233 according to the size of the photosensitive film to be exposed and the number of exposure heads.

The multi-lens array 235 is formed by arranging a plurality of lenses that are matched one-to-one with a memory cell of the digital micromirror element 233 so as to focus and separate an exposure beam into a plurality of exposure beams. For example, when the digital micromirror element is made up of 1024 x 768 micro mirrors, the multi-lens array is also made up of 1024 x 768 pieces.

The projection lens 236 adjusts and transmits the resolution of exposure beams collected by the multi-lens array 235.

The DMD controller C for controlling the digital micromirror element 233 of the present invention includes a pattern generator PG 231a for generating a pattern design based on a pattern formed in a previous exposure process, and a pattern generator 231a. And a storage unit PD, 231b, in which a pattern design generated from the stored data is stored.

The measurement unit 131 is a coordinate comparison unit (CC, 131a) for comparing the pattern data and the reference data measured position information of the positioning pattern of the mother substrate with respect to the XY axis, and comparison from the coordinate comparison unit 131a And a coordinate transformation unit 131b for supplying coordinate transformation data to the pattern generator 231a using the data.

The reference data of the coordinate comparing unit 131a is position information of a positioning pattern for alignment of the mother substrate in a previous exposure process. The position information of the positioning pattern has a function of an align key for aligning the mother substrate, thereby determining the position of the pattern image formed on the mother substrate.

Here, the positioning pattern is formed at an edge corresponding to the non-display area of the mother substrate and has a function for aligning the mother substrate during the manufacturing process.

According to one embodiment of the present invention, when performing a photolithography process using the maskless exposure apparatus 130 at least after the second time, a pattern defect due to deformation of the mother substrate before the exposure process of the maskless exposure apparatus 130 is performed. The measurement unit 131 further measures the deformation of the mother substrate in order to prevent this.

Therefore, the present invention has an advantage of improving the reliability of pattern formation using the maskless exposure apparatus 131 by performing the exposure process by converting the pattern design to compensate for the deformation of the mother substrate by the previous exposure process.

4 is a diagram illustrating a mother substrate including a positioning pattern according to an embodiment of the present invention, and FIG. 5 is a diagram illustrating a positioning pattern and a previous positioning pattern detected by a measurement unit of the present invention as coordinates. to be.

As shown in FIGS. 4 and 5, the positioning pattern P according to the exemplary embodiment of the present invention is formed at the edge of the non-display area NA of the mother substrate G. As shown in FIG.

The mother substrate G includes a plurality of display areas AA and a non-display area NA positioned around the plurality of display areas AA.

The present invention does not include a measurement step in the progress of the first photolithography process, a mask etching process or a maskless etching process is performed.

In the first photolithography process, the mother substrate G is not deformed until the mother substrate G is provided. Therefore, the mother substrate G performs the measurement step in the first photolithography process. There is no need to do it.

In the photolithography process performed after at least a second time, in the case of performing the maskless etching process, the positioning pattern P of the mother substrate G is used before the maskless etching process. Measure the deformation in coordinates.

P 1 to P 4 are positions of the first positioning pattern set when the first pattern is formed in the previous photolithography process, and P 1 ′ to P 4 ′ are measured at the measurement step before the maskless etching process. 2 Position of positioning pattern.

The measurement unit of the present invention compares the position of the first positioning pattern with the position of the second positioning pattern, calculates the deformation of the mother substrate G, and generates coordinate transformation data.

The coordinate transformation data may be calculated by Equation 1.

Figure pat00001

The x 'and y' mean a second pattern whose coordinates corresponding to the first pattern before deformation of the mother substrate G are compensated by calculating positions of the first and second positioning patterns.

For example, in an exemplary embodiment of the present invention, the first pattern formed on the second pixel of the first line formed in the etching process before the maskless etching process is changed in position by contraction / expansion of the mother substrate, and through coordinate transformation data of the measurement unit. The second pattern may be formed to compensate for the changed position by using the positioning pattern to correspond to the corresponding pixel.

6 is a diagram illustrating a mother substrate including a positioning pattern according to another exemplary embodiment of the present invention.

As illustrated in FIG. 6, the positioning pattern P according to another exemplary embodiment of the present invention is formed at the edge of the unit display area AA of the mother substrate G. As shown in FIG.

The positioning pattern P is formed at each edge of the unit display area AA to compare the first positioning pattern of the previous exposure process with the second positioning pattern after the pattern is formed based on the unit display area AA. Therefore, it has an advantage of preventing a pattern defect caused by deformation of the mother substrate (G).

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

131: measurement unit 131a: coordinate comparison unit
131b: coordinate conversion unit

Claims (10)

A measurement unit for measuring deformation of the mother substrate before performing the maskless exposure process in at least the second and subsequent photolithography processes; And
And an exposure unit configured to perform a maskless exposure process based on a pattern design for compensating for deformation of the mother substrate by the measurement unit. The method according to claim 1,
The exposure unit includes:
A light source for generating a light source beam;
A digital micro mirror element for converting the light into an exposure beam having image information to be exposed;
A beam expander for expanding an irradiation area of an exposure beam from said digital micromirror element;
A multi-lens array for separating and condensing the extended exposure beam from the beam expander into a plurality;
A projection lens for adjusting the resolution of exposure beams collected from the multilens array; And
And a digital micro-mirror device (DMD) controller for controlling a pattern design of an exposure beam from the digital micromirror element. The method of claim 2,
And a positioning pattern formed at an edge of the mother substrate, wherein the measurement unit determines the positioning pattern of the mother substrate, wherein the position information of the positioning pattern of the mother substrate before the previous exposure process is performed after the exposure process. A coordinate comparison unit for comparing the position information of the; And
And a coordinate conversion unit for supplying coordinate conversion data to the pattern generation unit in accordance with a comparison result from the coordinate comparison unit. The method of claim 3,
The DMD controller may include a pattern generator configured to generate a pattern design for compensating for deformation of the mother substrate by using coordinate transformation data from the coordinate converter; And
And a storage unit storing a pattern design generated from the pattern generator. The method according to claim 1,
The mother substrate is divided into a plurality of display regions and a non-display region positioned around the plurality of display regions, and includes a positioning pattern formed at each edge of the plurality of display regions. Measuring deformation of the mother substrate before performing the maskless exposure process in at least the second and subsequent photolithography processes; And
And performing a maskless exposure process based on a pattern design measuring the deformation of the mother substrate to compensate for the deformation of the mother substrate. The method according to claim 1,
The maskless exposure step,
Generating an exposure beam;
Converting the exposure beam to have image information to be exposed by a digital micromirror element;
Expanding an irradiation area of an exposure beam from said digital micromirror element;
Separating and condensing the extended exposure beam into a plurality;
Adjusting the resolution of the focused exposure beams; And
And controlling a pattern design of an exposure beam from the digital micromirror element by a digital micro-mirror device control. The method of claim 7, wherein
And a positioning pattern formed at an edge of the mother substrate, wherein the measuring step includes positioning of the mother substrate whose position information of the positioning pattern of the mother substrate before the previous exposure process is measured after the exposure process. Comparing location information of a pattern; And
And a coordinate conversion unit for supplying coordinate conversion data to the DMD control unit according to a comparison result. The method of claim 8,
Generating, by the DMD controller, a pattern design that compensates for deformation of the mother substrate using the coordinate transformation data; And
And a storage unit in which the pattern design is stored. The method of claim 6,
And the mother substrate is divided into a plurality of display areas and a non-display area positioned around the plurality of display areas, and includes a positioning pattern formed at each edge of the plurality of display areas.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170082178A (en) * 2016-01-05 2017-07-14 삼성전자주식회사 method for exposing an electron beam

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Publication number Priority date Publication date Assignee Title
KR20080067915A (en) * 2007-01-17 2008-07-22 엘지전자 주식회사 Maskless exposure apparatus and method for aligning the same
KR20120010424A (en) * 2010-07-26 2012-02-03 삼성전자주식회사 Exposure apparatus and method of controlling the same
KR20120034396A (en) * 2010-10-01 2012-04-12 삼성전자주식회사 Maskless exposure apparatus, method for determining start position and orientation of exposure scan in maskless lithography
KR20120100208A (en) * 2011-03-03 2012-09-12 삼성전자주식회사 Maskless exposure apparatus and method for compensating cumulative intensity of illumination using the same
KR20120100209A (en) * 2011-03-03 2012-09-12 삼성전자주식회사 Maskless exposure apparatus and method for stitching exposure using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080067915A (en) * 2007-01-17 2008-07-22 엘지전자 주식회사 Maskless exposure apparatus and method for aligning the same
KR20120010424A (en) * 2010-07-26 2012-02-03 삼성전자주식회사 Exposure apparatus and method of controlling the same
KR20120034396A (en) * 2010-10-01 2012-04-12 삼성전자주식회사 Maskless exposure apparatus, method for determining start position and orientation of exposure scan in maskless lithography
KR20120100208A (en) * 2011-03-03 2012-09-12 삼성전자주식회사 Maskless exposure apparatus and method for compensating cumulative intensity of illumination using the same
KR20120100209A (en) * 2011-03-03 2012-09-12 삼성전자주식회사 Maskless exposure apparatus and method for stitching exposure using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170082178A (en) * 2016-01-05 2017-07-14 삼성전자주식회사 method for exposing an electron beam

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