KR20140024510A - Nanowire, nanowire grid structure and method of manufacturing a nanowire - Google Patents
Nanowire, nanowire grid structure and method of manufacturing a nanowire Download PDFInfo
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- KR20140024510A KR20140024510A KR1020120090442A KR20120090442A KR20140024510A KR 20140024510 A KR20140024510 A KR 20140024510A KR 1020120090442 A KR1020120090442 A KR 1020120090442A KR 20120090442 A KR20120090442 A KR 20120090442A KR 20140024510 A KR20140024510 A KR 20140024510A
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Abstract
Description
The present invention relates to the field of nanowire manufacturing technology.
Nanowires are wire structures of nanometer-scale size, ranging in size from less than 10 nm in diameter to those of several hundred nm in diameter. Such nanowires have an advantage in that they can use optical properties indicating movement characteristics or polarization of electrons in a specific direction. Accordingly, the present invention is widely applied to various fields such as an optical device such as a laser, a transistor, and a memory device, and has been spotlighted as a material for forming a transparent transparent electrode having flexibility by replacing the conventional ITO transparent electrode, which lacks flexibility.
However, research on the manufacturing method and physical properties of nanoparticles is very active at present, and there is little research on manufacturing method of nanowires. Conventional nanowire manufacturing methods include a method of growing a nanowire metal using a catalyst and a method of forming nanowires using a template. First, a method of forming a nanowire material using a template is prepared by anodizing an alumina membrane composed of holes having a diameter of several tens of nanometers and a few micro depths, and then forming the nanowire material in the formed holes. And a method of depositing the nanowire material in a gaseous state and depositing it in the hole. Specifically, U.S. Patent No. 6,525,461 discloses a technique for forming a nanopowder on a substrate by forming a catalyst film on a substrate and forming a porous layer on the substrate to form a titanium nanowire in the pore . In addition, U.S. Patent No. 6,139,626 discloses a method of forming a quantum dot solid by injecting colloidal nanocrystals into pores formed in a template and then performing heat treatment or the like to form a quantum dot solid using a template have. However, the nanowire manufacturing method according to the above-described technique is not suitable for mass production because the process is too complicated, takes a long time, and it is difficult to control the uniformity. Therefore, nanowire having excellent linearity and alignment can not be formed .
Next, a method of growing a nanowire metal using a catalyst may be a laser assisted catalytic growth (LCG) method or a vapor liquid solid method described in Korean Patent Publication No. 10-2006-0098959 , VLS) growth method. That is, a method of growing a nanowire using a mixture of a nanowire material and a metal as a raw material and a metal catalyst as a nucleus. However, the above-described method has a problem that the maximum formation length of nanowires is limited, and a high-temperature heat treatment process is required, which is not suitable for mass production. Further, in the case of the VLS growth method, since the nanowire is limited by the diameter and the distribution of the metal catalyst, it is difficult to control the accurate width (thickness) and its distribution, and contamination by the metal catalyst in the nanowire. This is also a problem. In addition, the VLS growth method has high manufacturing costs due to high equipment cost, low growth rate due to low growth rate, and also there is a limit inadequate for mass production of nanowires.
That is, most of the conventional methods for manufacturing nanowires are not suitable for mass production of nanowires having excellent physical properties at low cost, and therefore, there is a need to develop a new nanowire manufacturing method.
In addition, when nanowires are used in place of ITO transparent electrodes, there is a problem in that reflection occurs due to the characteristics of the metal material itself, and as a result, visibility problems must be solved.
The present invention has been proposed to solve the above-mentioned conventional problems, and an object of the present invention is to provide a method for manufacturing nanowires, which enables mass production of nanowires with high uniformity at low temperature and at low cost.
In addition, an object of the present invention is to provide a nanowire applicable to a transparent electrode, by forming a blackening layer on the nanowire itself, thereby securing flexibility while preventing visibility deterioration due to reflection.
Nanowire manufacturing method of the present invention for solving the above problems, a plurality of lattice patterns formed on a substrate, a sacrificial layer is formed on the lattice pattern, at least one on the lattice pattern on which the sacrificial layer is formed The method may include forming a nanowire base layer having a blackening layer, and etching the sacrificial layer to separate the lattice pattern and the nanowire base layer.
In the nanowire manufacturing method of the present invention, forming the nanowire base layer includes forming a lower blackening layer on the lattice pattern on which the sacrificial layer is formed, and depositing a nanowire material on the lower blackening layer. It can be done by.
In the nanowire manufacturing method of the present invention, forming the nanowire base layer, depositing a nanowire material on the lattice pattern on which the sacrificial layer is formed, and forming an upper blackening layer on the deposited nanowire material It can be made, including.
In the nanowire manufacturing method of the present invention, forming the nanowire base layer, forming a lower blackening layer on the lattice pattern formed with the sacrificial layer, depositing a nanowire material on the lower blackening layer, And forming an upper blackening layer on the deposited nanowire material.
In the nanowire manufacturing method of the present invention, the deposition of the nanowire material may be made by at least one of a sputtering method, a chemical vapor deposition method, an evaporation method.
In the nanowire manufacturing method of the present invention, the lattice pattern is formed by forming a lattice base layer with an ultraviolet curable polymer on the substrate, pressing the lattice base layer with an imprint mold, and applying ultraviolet rays to the lattice base layer. Irradiation may be made, including curing the lattice base layer.
In the nanowire manufacturing method of the present invention, forming the lattice pattern, forming a lattice base layer with a thermosetting polymer on the substrate, and by pressing the lattice base layer with a heated imprint mold to cure the lattice base layer It can be made to include.
In the nanowire manufacturing method of the present invention, the sacrificial layer may be formed by at least one of a sputtering method, a chemical vapor deposition method, and an evaporation method.
The nanowire manufacturing method of the present invention may further comprise separating the nanowires from the nanowire base layer after separating the nanowire base layer. In this case, the separation of the nanowires may be performed by applying ultrasonic vibration to the nanowire base layer, but is not limited thereto.
Nanowire grating structure of the present invention for solving the above problems, a plurality of grating patterns formed on the grating base layer; A sacrificial layer formed on the top and side surfaces of the grating pattern; And a nanowire base layer formed on the lattice pattern on which the sacrificial layer is formed and having at least one blackening layer.
In the nanowire lattice structure of the present invention, the nanowire base layer may include a lower blackening layer formed on the lattice pattern on which the sacrificial layer is formed; It may include; nanowire layer formed on the lower blackening layer.
In the nanowire lattice structure of the present invention, the nanowire base layer may include a nanowire layer on the lattice pattern on which the sacrificial layer is formed; And an upper blackening layer formed on the nanowire layer.
In the nanowire lattice structure of the present invention, the nanowire base layer may include a lower blackening layer formed on the lattice pattern on which the sacrificial layer is formed; A nanowire layer formed on the lower blackening layer; An upper blackening layer formed on the nanowire layer; . ≪ / RTI >
In addition, the nanowires of the present invention for solving the above-mentioned problems, including at least one material of a metal, a metal oxide, a nitride, a ceramic, a blackening layer may be formed on part or all of the surface.
In the nanowires of the present invention, the blackening layer may include at least one of Cr, CrO 2 , ZrO 2 , TiO 2 , Si 3 N 4 , AlN, and Ta 2 O.
In the nanowire of the present invention, the thickness of the blackening layer may be formed in the range of more than 0 and 10nm or less.
In the nanowires of the present invention, the blackening layer may include at least one of the upper blackening layer formed on the upper surface of the nanowire to the lower blackening layer formed on the lower surface.
In the nanowires of the present invention, the ratio of the length and width of the nanowires may be 1000: 1 or more.
According to the present invention, it is possible to easily manufacture the nanowire even at room temperature without a high temperature heat treatment process, the effect of improving the efficiency of the process occurs.
In addition, according to the present invention, when forming a nanowire with a metal material, it is possible to replace the conventional ITO transparent electrode and to prevent metal reflection by forming a blackening layer to improve the visibility while improving the flexibility Will have
In addition, according to the present invention, by separating the lattice pattern and the nanowires in an easy process of etching the sacrificial layer, there is an advantage of preventing damage to the nanowires that may occur during the separation process and the efficiency of the process according to the process simplification is improved have.
In addition, according to the present invention, the nanowires have the advantage of mass production and the advantage of producing nanowires with high uniformity despite the mass production.
1 schematically shows the structure of a nanowire grating structure according to the present invention.
Figure 2 is a flow chart showing a nanowire manufacturing method according to the present invention.
Figure 3a to 3j is a manufacturing process diagram showing a nanowire manufacturing method according to an embodiment of the present invention.
4 shows an actual image of a nanowire made in accordance with the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it is to be understood that the embodiments shown in the specification and the drawings shown in the drawings are only exemplary embodiments of the present invention, and that various equivalents and modifications may be substituted for them at the time of the present application. In addition, in describing the operating principle of the preferred embodiment of the present invention in detail, if it is determined that the detailed description of the related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. The following terms are defined in consideration of the functions of the present invention, and the meaning of each term should be interpreted based on the contents throughout this specification. The same reference numerals are used for portions having similar functions and functions throughout the drawings.
Figure 1 schematically shows the structure of the nanowire lattice structure according to the present invention, more specifically, Figure 1 (a) is a blackening layer formed of a single layer, Figure 1 (b) is a blackening layer is a double layer It shows an embodiment in the case formed as. In the present invention, the nanowire lattice structure refers to a structure formed before the etching process of the sacrificial layer in the nanowire manufacturing process. In addition, in the present invention, the nanowire base layer is a term for referring to the nanowire layer and the blackening layer formed to contact the nanowire layer as a structure.
Referring to FIG. 1A, the nanowire grating structure according to the present invention includes a plurality of
The
On the
The
However, the above description is just one example, and in addition, the sacrificial layer material may be variously selected and used according to the type of the nanowire material. That is, it will be said that the sacrificial layer of the present invention can be formed using any other material between the nanowire material and the etching solution.
The nanowire base layer including the
The
The
Meanwhile, the nanowire base layer may further include an additional blackening layer in addition to the
According to the present embodiment, as the
Meanwhile, although not shown in the drawing, the nanowire base layer may have a structure having only the
When using the nanowire lattice structure of the present invention having the above-described structure, it is possible to obtain nanowires through a nanowire separation process such as a simple sacrificial layer etching process and ultrasonic vibration later, nanowires at room temperature without high temperature heat treatment process To produce nanowires at low cost, and to prevent nanowire damages that may occur during separation of the lattice pattern and the nanowire base layer, and to simplify the process. This has the advantage of improving the efficiency of the process. In addition, the benefits of mass production of nanowires and the advantage of manufacturing nanowires with high uniformity despite mass production are additionally realized.
Figure 2 is a flow chart showing a nanowire manufacturing method according to the present invention.
1 and 2, in the method of manufacturing nanowires according to the present invention, a lattice pattern is formed on a substrate (S10), a sacrificial layer is formed on the lattice pattern (S30), and at least one on the sacrificial layer. Forming a nanowire base layer having a blackening layer of (S50), and etching the sacrificial layer to separate the nanowire base layer and the lattice pattern (S70), and the nanowires in the nanowire base layer Separation (S90) may be further included.
Here, the process of forming the grid pattern on the substrate (S10) can be made as follows. First, a polymer material such as UV resin, which is a photo-curable polymer, is applied on a substrate to form a lattice base layer. The description of the material of the substrate is the same as that described above in the description of FIG. Then, the imprint mold having grooves and protrusions on the upper part of the lattice base layer is aligned. Here, the plurality of grooves and protrusions of the imprint mold are repeatedly formed at a predetermined distance from each other. Further, the grooves of the imprint mold correspond to the positions where the grid pattern is to be formed.
Thereafter, the groove portion of the imprint mold is pressed so as to be in contact with the lattice base layer, and then photo-curing is performed by irradiating ultraviolet rays. Accordingly, a plurality of grid patterns are formed on the upper portion of the grid base layer at portions corresponding to the grooves of the imprint mold. At this time, the imprint mold may be made of a transparent material such as quartz so that light (for example, ultraviolet rays) can be transmitted, and may be made of a flexible material to enable a roll-to-roll process. Meanwhile, the width W of the groove may be specifically in the range of 20 nm to 200 nm, but is not limited thereto. And the width of the lattice pattern formed at the portion corresponding to the groove is in the range of 20 nm to 200 nm. It should be understood that this is only an example, and that the width of the imprint mold groove and the width of the lattice pattern can be appropriately changed in consideration of the width of the nanowire to be formed later.
In the above-described embodiments, the material for forming the lattice base layer is a photo-curable polymer. Alternatively, a thermosetting polymer may be used. In this case, the lattice base layer is pressed with an imprint mold, It is possible to form the grid pattern of the invention. For example, the lattice pattern of the present invention may be formed by forming a lattice base layer with a thermosetting polymer and then pressing the lattice base layer with a heated imprint mold to cure the lattice base layer. On the other hand, when the material forming the lattice base layer is a thermosetting polymer, the imprint mold is preferably made of a material capable of withstanding the heating and high-pressure process.
Since the sacrificial layer is formed on the upper and side surfaces of the grid pattern (S30), the sacrificial layer may be formed as follows.
The sacrificial layer material is deposited on the lattice pattern formed in step S10. In this case, the deposition of the sacrificial layer material may be performed using any deposition method that is currently developed and commercialized, such as a sputtering method, a chemical vapor deposition method, and an evaporation method, or may be implemented according to future technological developments. In this case, the sacrificial layer material may be variously selected according to the nanowire material to be deposited for forming nanowires later, and a material different from the nanowire material and the etching solution may be used as the sacrificial layer material of the present invention. Nanowire materials and materials having high wet etching selectivity may be used as the sacrificial layer materials. For example, when the nanowire material is any one of Poly-Si, SiC, SiN, TiN, Ti, Al, oxide may be used as the sacrificial layer material. In addition, when the nanowire material is any one of oxide, SiC, and SiN, polysilicon may be used as the sacrificial layer material. When the nanowire material is Ni, Cu or Al may be used as the sacrificial layer material, and when the nanowire material is Ag, Al may be used as the sacrificial layer material. In addition, when the nanowire material is Au, any one of Cu, Ni, and Al may be used as the sacrificial layer material, and when the nanowire material is Cu, Al or Ti may be used as the sacrificial layer material. Of course, it is also possible to use Cu as a sacrificial layer material in the opposite case, for example when the nanowire material is Al or Ti.
Thereafter, the nanowire base layer is formed on the sacrificial layer (S50), and the formation of the nanowire base layer may be performed as follows.
In the case where only the lower blackening layer is formed on the nanowire base layer, all deposition methods, such as sputtering, chemical vapor deposition, and evaporation, that have been developed and commercialized or implemented according to future technology development, may be used. Deposit a light antireflective material. At this time, Cr, CrO 2 , ZrO 2 , TiO 2 , Si 3 N 4 , AlN, Ta 2 O, etc. may be used as the anti-reflective material, but is not limited thereto, and the deposition thickness is formed in a range of more than 0 and 10 nm or less. It may be changed, but may be appropriately changed according to the required nanowire specifications as described above in the description of FIG.
After that, the nanowire layer is formed by depositing the nanowire material on the lower blackening layer by any deposition method that is currently developed and commercialized or implemented according to future technological development, such as sputtering, chemical vapor deposition, and evaporation. . The nanowire material may be formed of a material different from the sacrificial layer material and the etching solution, and the material may be made of at least one of metal, metal oxide, nitride, and ceramic. For example, metals such as Ag, Cu, Al, Cr, Ni, Au, metal oxides such as AgO, Al 2 O 3 , ZnO, ITO, Si or ceramic materials such as SiO 2 , SiN, SiC may be used as the nanowire material. have. However, this is just one example, and the scope of the present invention is not limited thereto. In addition, various materials may be deposited on the lattice pattern as nanowire materials according to the purpose of use. In particular, when a metal having excellent electrical conductivity, such as Ag or Cu, is used as the nanowire material, the transparent electrode replacing ITO can be formed using the nanowire to be formed as described above with reference to FIG. 1. In this case, it is preferable that the nanowire material is deposited to have voids without filling all of the lattice patterns, as described above with reference to FIG. 1.
Meanwhile, when the lower blackening layer and the upper blackening layer are formed on the nanowire base layer, the upper blackening layer may be formed by again depositing an anti-reflective material on the nanowire layer after forming the nanowire layer. In this case, the method of forming the upper blackening layer, the material used and the thickness thereof are omitted as in the case of the lower blackening layer.
When only the upper blackening layer is formed on the nanowire base layer, the nanowire material is deposited on the sacrificial layer to form the nanowire layer, and the light antireflective material is deposited on the nanowire layer to form the upper blackening layer. The description of the nanowire layer and the description of the upper blackening layer are the same as described above, and thus will be omitted.
After forming the nanowire base layer through the process of S10 to S50 described above, the nanowire base layer and the lattice pattern is separated (S70), wherein the separation of the nanowire base layer and the lattice pattern is a grid pattern in step S30 It can be made by etching the sacrificial layer formed on. In this case, the etchant used may be variously selected and combined according to the type of the sacrificial layer material.
Since it is possible to separate the nanowires through a physical method such as applying an ultrasonic vibration to the nanowire base layer (S90), such a nanowire manufacturing method has the advantage of manufacturing nanowires at a low manufacturing cost at room temperature, The advantages of mass production of nanowires and the production of nanowires with high uniformity are obtained despite mass production. In addition, since the lattice pattern formed on the substrate can be recycled in the nanowire manufacturing process, economical benefits are further realized to further reduce manufacturing costs. In addition, when the sacrificial layer forming process, the blackening layer (upper blackening layer or lower blackening layer) forming process, and the nanowire layer forming process are performed by the same process (e.g. sputtering process), the process continuity can be secured. This further improves the effect.
Figure 3a to 3j is a manufacturing process diagram showing a nanowire manufacturing method according to an embodiment of the present invention. Hereinafter, a manufacturing process in the case where the nanowire base layer includes both an upper blackening layer and a lower blackening layer will be described. However, this is only one example and only one of the upper blackening layer or the lower blackening layer may be formed. As described above.
1 to 3J, a
Thereafter, as shown in FIG. 3B, the
As shown in FIG. 3C, after pressing the upper portion of the
After the lattice pattern is formed, the
After the
As the anti-reflective material used herein, materials such as Cr, CrO 2 , ZrO 2 , TiO 2 , Si 3 N 4 , AlN, Ta 2 O may be used, but are not limited thereto. In addition, as a deposition method, any deposition method currently developed and commercialized or implemented according to future technology development, such as a sputtering method, a chemical vapor deposition method, and an evaporation method, may be used, and the thickness of the
Thereafter, as shown in FIG. 3G, the nanowire material is deposited on the
The nanowire material deposited on the
After the
After the
Etching the
As such, by implementing the nanowire having the upper blackening layer or the lower blackening layer formed on the surface, it is possible to prevent the reflection of light, thereby improving the visibility and securing the flexibility. It will be able to replace ITO transparent electrode.
Figure 4 shows an enlarged 10,000 times the actual image of the nanowires prepared in accordance with the present invention, it can be seen that there is an advantage that can be produced in a uniform nanowire mass in accordance with the present invention.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, Those skilled in the art will appreciate that many suitable modifications and variations are possible in light of the present invention. Accordingly, all such modifications and variations as fall within the scope of the present invention should be considered.
110: substrate
130: lattice base layer
131: grid pattern
132: void
140: sacrificial layer
150: lower black layer
170: nanowire layer
190: upper black layer
A: nanowire base layer
210: imprint mold
211: imprint mold protrusion
Claims (19)
Forming a sacrificial layer on the grid pattern,
Forming a nanowire base layer having at least one blackening layer on the lattice pattern on which the sacrificial layer is formed,
Etching the sacrificial layer to separate the lattice pattern and the nanowire base layer.
Forming the nanowire base layer,
Forming a lower blackening layer on the lattice pattern on which the sacrificial layer is formed;
Nanowire manufacturing method comprising depositing a nanowire material on the lower blackening layer.
Forming the nanowire base layer,
Depositing a nanowire material on the lattice pattern on which the sacrificial layer is formed,
Nanowire manufacturing method comprising forming an upper blackening layer on the deposited nanowire material.
Forming the nanowire base layer,
Forming a lower blackening layer on the lattice pattern on which the sacrificial layer is formed;
Depositing a nanowire material on the lower blackening layer,
Nanowire manufacturing method comprising forming an upper blackening layer on the deposited nanowire material.
The nanowire material,
A method for manufacturing nanowires deposited on the grating pattern by at least one of a sputtering method, a chemical vapor deposition method, and an evaporation method.
Forming the grid pattern,
Forming a lattice base layer of an ultraviolet curable polymer on the substrate,
Pressing the lattice base layer with an imprint mold,
And irradiating the lattice base layer with ultraviolet rays to cure the lattice base layer.
Forming the grid pattern,
Forming a lattice base layer of a thermosetting polymer on the substrate,
Pressing the lattice base layer with a heated imprint mold to harden the lattice base layer.
Forming the sacrificial layer,
A nanowire manufacturing method formed by at least one of a sputtering method, a chemical vapor deposition method, and an evaporation method.
After separating the nanowire base layer,
Nanowire manufacturing method further comprises separating the nanowires from the nanowire base layer.
Separating the nanowires,
Nanowire manufacturing method by applying ultrasonic vibration to the nanowire base layer.
A sacrificial layer formed on the top and side surfaces of the grating pattern;
A nanowire base layer formed on the lattice pattern on which the sacrificial layer is formed and having at least one blackening layer;
≪ / RTI >
The nanowire base layer,
A lower blackening layer formed on the grid pattern on which the sacrificial layer is formed;
A nanowire layer formed on the lower blackening layer;
≪ / RTI >
The nanowire base layer,
A nanowire layer on the grid pattern on which the sacrificial layer is formed;
An upper blackening layer formed on the nanowire layer;
≪ / RTI >
The nanowire base layer,
A lower blackening layer formed on the grid pattern on which the sacrificial layer is formed;
A nanowire layer formed on the lower blackening layer;
An upper blackening layer formed on the nanowire layer;
≪ / RTI >
Nanowire with blackening layer formed on part or all of the surface.
The blackening layer,
Nanowires comprising at least one of Cr, CrO 2 , ZrO 2 , TiO 2 , Si 3 N 4 , AlN, Ta 2 O.
The thickness of the blackening layer,
Nanowires formed in the range of more than 0 and 10 nm or less.
The blackening layer is nanowires including at least one of the upper blackening layer formed on the upper surface of the nanowire to the lower blackening layer formed on the lower surface.
The ratio of length and width of the nanowires is 1000: 1 or more.
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| KR1020120090442A KR20140024510A (en) | 2012-08-20 | 2012-08-20 | Nanowire, nanowire grid structure and method of manufacturing a nanowire |
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| KR1020120090442A KR20140024510A (en) | 2012-08-20 | 2012-08-20 | Nanowire, nanowire grid structure and method of manufacturing a nanowire |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10156668B2 (en) | 2014-09-12 | 2018-12-18 | Samsung Display Co., Ltd | Wire grid polarizer and method of fabricating the same |
| KR20190047901A (en) * | 2017-10-30 | 2019-05-09 | 한국생산기술연구원 | A method for forming a nanowire pattern using a mold having a channel |
-
2012
- 2012-08-20 KR KR1020120090442A patent/KR20140024510A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10156668B2 (en) | 2014-09-12 | 2018-12-18 | Samsung Display Co., Ltd | Wire grid polarizer and method of fabricating the same |
| KR20190047901A (en) * | 2017-10-30 | 2019-05-09 | 한국생산기술연구원 | A method for forming a nanowire pattern using a mold having a channel |
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