KR20140008128A - Substrate for led and led heat-sink structure - Google Patents

Substrate for led and led heat-sink structure Download PDF

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Publication number
KR20140008128A
KR20140008128A KR1020120075269A KR20120075269A KR20140008128A KR 20140008128 A KR20140008128 A KR 20140008128A KR 1020120075269 A KR1020120075269 A KR 1020120075269A KR 20120075269 A KR20120075269 A KR 20120075269A KR 20140008128 A KR20140008128 A KR 20140008128A
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KR
South Korea
Prior art keywords
led
substrate
heat dissipation
heat
copper
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KR1020120075269A
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Korean (ko)
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KR101418008B1 (en
Inventor
이은복
강경훈
소장미
Original Assignee
주식회사 케이씨씨
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Priority to KR1020120075269A priority Critical patent/KR101418008B1/en
Publication of KR20140008128A publication Critical patent/KR20140008128A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Abstract

The present invention provides a substrate for an LED, which includes a ceramic substrate and a copper plate which is bonded to one or both sides of the ceramic substrate with a direct copper bonding method. The substrate and a heat dissipation structure for the LED manufactured by the present invention efficiently controls heat during an LED operation by reducing the heat from a copper surface by increasing a heat discharge cross section by increasing the thickness of the copper in comparison to an existing product.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate,

The present invention relates to a substrate for an LED, an LED heat dissipation structure, and the like.

LEDs (light emitting diodes), a type of diode that emits light when the electric current is flowing, is very important to control the heat dissipated from the LED in watt-class LEDs and products with Φ8mm 50mA and above. Driving the LEDs requires 20% of the light and 80% of the heat, so it is necessary to control the heat so that the LEDs can not be used unless the heat is controlled. LEDs are semiconductor chips, which are very small in size, and the heat generated by the LEDs can take a long life.

LEDs are low power consumption devices with high power efficiency and can last for over 250,000 hours longer than known. However, since it is only possible to catch heat, it is preferable to use 50,000 hours as the actual heat dissipation technology.

If the temperature of the LED can be managed only 20 degrees or less, the lifetime of the LED may exceed 250,000 hours. However, how fast it dissipates its own heat is the key, and it is necessary to have a technology that can effectively control the heat dissipation at a reasonable cost. Especially, the heat dissipation characteristics of the LED at a high temperature of about 60 degrees is a factor directly related to the lifetime of the LED.

In addition, if the generated heat is not rapidly processed, the LED chip affects the peripheral circuits as well as the reliability of the product. Thermal shocks accumulated over a long period of time cause product problems. According to the related industry, more than 50% of LED failures are caused by heat generation, and the rest are caused by humidity, vibration, shock, dust, and the like.

Currently, trends in LED lighting products can be defined as four characteristics: high output, small size, light weight, and low cost. In other words, the output is stronger, the size is smaller and lighter, and the price is getting lower. This can be seen as a characteristic of LED lighting as it enters the commercialization stage from the research product stage.

With such trends, the density of heat generated by LEDs can not but increase. As the output of the LED increases, the heat is increasing more and more, but the heat transfer and emission space is getting smaller. Therefore, heat dissipation is a top priority in LED usage.

On the other hand, recently, increasing commercial value through cost reduction and design improvement has also become an important factor. Therefore, a different type of heat radiation function is required.

As a heat dissipation method that can be considered in the first place, a method of forming a heat dissipation structure by processing laser via holes in ceramics and forming copper through Ti-Cu sputtering, chemical Cu plating, and Cu-plating is considered. However, in this case, the thickness of copper is as thin as about 50 占 퐉, which causes a problem of poor heat dissipation characteristics.

The various embodiments of the present invention are intended to solve the above-mentioned problems, and one or more of the following problems are solved.

That is, the present invention provides an LED substrate and a heat dissipation substrate which can improve the thermal property by reducing the amount of heat generated on the copper surface by increasing the cross-sectional area of electrical conduction by increasing the thickness from 50 탆 to 500 탆, Structure. ≪ / RTI >

Another object of the present invention is to provide a substrate for an LED and a heat dissipation structure that can realize a low cost through a simplified process.

As means for solving the above problem,

The present invention relates to a ceramic substrate; And a copper plate bonded to one side or both sides of the ceramic substrate using DCB (Direct Copper Bonding) method.

Also, the thickness of the copper plate is in the range of 50 to 500 mu m.

Also, the ceramic substrate has a via hole filled with a conductive material.

Also, the diameter of the via hole is in the range of 0.01 to 1.0 mm.

Also, a copper plate formed on one or both surfaces of the ceramic substrate is etched to form a circuit pattern.

The circuit board is divided into an electrical connection portion for driving the LED and a heat dissipation portion for dissipating heat of the LED. The circuit board according to any one of Claims 1 to 3, .

Also, an LED is mounted on the heat dissipation part, and the electrical connection part and the LED are electrically connected by a wire.

In addition, the electrical connection part and the heat dissipation part all include an upper copper plate, a via hole filled with a conductive material, and a lower copper plate.

Also, the electrical connection portion and the heat dissipation portion are fabricated together in the same process.

The present invention also relates to a substrate for LED of the above-mentioned one; And an LED mounted on one surface of the LED mounting board.

The circuit board according to the present invention provides at least one or more of the following effects.

That is, the LED substrate and the heat dissipation structure manufactured according to the present invention can increase the copper thickness as compared with the conventional product, and the heat dissipation structure increases the heat dissipation cross- The heat can be effectively controlled.

1 is a schematic cross-sectional view illustrating an LED substrate and an LED heat dissipation structure according to an embodiment of the present invention.

Hereinafter, the LED substrate and the LED heat dissipation structure according to the present invention will be described in detail. Although the present invention has been fully described by way of example with reference to the accompanying drawings, it is to be understood that the invention is not limited to the disclosed embodiments.

The present invention provides a substrate for an LED comprising a ceramic substrate, and a copper plate bonded to one or both surfaces of the ceramic substrate using a DCB (Direct Copper Bonding) method. The at least one copper plate serves as a heat sink. The DCB method can increase the thickness of the copper plate to about 300 to 500 mu m, which is structurally simpler than the conventional LED heat dissipation method, and can significantly improve the heat dissipation characteristic.

The ceramic substrate can be made of various materials and is not limited. For example, the ceramic substrate 10 may be made of a ceramic material such as alumina (Al2O3), aluminum nitride (AlN), silicon carbide (SiC), and silicon nitride (Si3N4). Further improvements in high reliability and thermal properties may be possible due to the wide variety of applicability of ceramic materials.

The copper plate is not limited, and a copper plate that can be used for DCB is used. The copper plate may be bonded to one or both surfaces of the ceramic substrate by the DCB method. The DCB junction method itself is well known, and is well known, thereby resulting. Exemplary DCB bonding schemes are performed at temperatures above the eutectic point of copper and oxygen. The initial Copper Sheet forms a thin oxide film and is heated to a temperature between 1065 ° C above the eutectic point and 1085 ° C, the melting point of the copper, in contact with the ceramic substrate during the process. Then, the pure copper remains in a solid state, and the eutectic mixture of copper and oxygen is formed into a liquid phase to have intimate properties with the ceramic, and the copper plate and the ceramic substrate are bonded to each other by wetting the surface of the ceramic substrate.

The thickness of the copper plate is not limited, but is preferably in the range of 50 to 500 mu m. When the thickness is less than 50 탆, the heat dissipation characteristics are poor. When the thickness exceeds 500 탆, a ceramic crack due to a difference in thermal expansion coefficient at the bonding interface between ceramic and copper may be caused.

The ceramic substrate may be formed with a via hole filled with a conductive material. By constructing the conductive via hole, both sides of the ceramic substrate can be energized through the via hole. The filling material of the via hole is not limited, but conductive paste, conductive powder and the like can be used. Meanwhile, the via hole can function to dissipate the heat generated from the LED to the opposite side of the ceramic substrate. For this purpose, the via hole can be filled with a material having better heat transfer characteristics than the ceramic substrate. In particular, a via hole of a heat dissipating portion described later can be filled with a material having a good heat dissipation property. The diameter of the via hole is not limited, but is preferably in the range of 0.01 to 1.0 mm. If the thickness is less than 0.01 mm, the resistance may be increased and the heat radiation characteristic may be deteriorated. If the thickness is more than 1.0 mm, the cost may increase due to the use of the filling material, and the degree of integration and substrate durability may be a problem.

1 is a schematic cross-sectional view illustrating an LED substrate and an LED heat dissipation structure according to an embodiment of the present invention. 1, copper patterns formed on one or both surfaces of the ceramic substrate 10 may be etched to form copper patterns 20, 30, 50, and 60. The etching method may use conventional photolithography methods and is not limited. The LED 70 may be mounted on the ceramic substrate 10 and the LED may be electrically connected to the copper pattern by wire or the like.

Meanwhile, the copper pattern may be divided into an electrical connection part A for driving the LED, and a heat dissipation part B for dissipating the heat of the LED. That is, the copper pattern 50 may be formed on the heat dissipation part B at the position where the LED 70 is mounted. The copper pattern 50 is bonded to the LED 70 to emit heat generated from the LED 70. For more effective heat dissipation, a via hole 40 and a copper plate (or copper pattern 60) on the other side may be formed. The heat generated by the LED 70 can be quickly dissipated by transferring the heat through the via hole 40 to the copper plate (or copper pattern) 60 formed on the other surface. In this case, the diameter of the via hole can be made larger than that of the via hole for energizing the via hole to perform the heat transfer function effectively. Preferably, the diameter of the heat-dissipating via-hole may be 1 to 10 times the diameter of the via hole for conducting electricity.

The copper pattern 20 of the electrical connection portion A for LED driving is formed adjacent to the position of the LED 70 and is energized by way of the LED 70 and the wire 80 or the like.

The electrical connection portion A and the heat dissipation portion B may include an upper copper plate, a via hole filled with a conductive material, and a lower copper plate. The term " copper plate " The electrical connection portion and the heat dissipation portion can be manufactured together in the same process. That is, the copper plate can be manufactured at the same time by joining by DCB, and can be produced together by etching at the same time even when forming a copper pattern. Also, via hole formation and conductive material filling can be performed together. Therefore, the heat radiating portion forming process can be simplified.

The LED heat dissipation structure according to another embodiment of the present invention provides an LED heat dissipation structure including an LED mounted on one side of the LED substrate (see FIG. 1). By mounting the LED on the heat dissipation unit, the heat dissipation can be more effectively performed, and a copper plate of sufficient thickness for heat dissipation can be formed, so that the heat dissipation cross-sectional area can be increased.

10: Ceramic substrate
20, 30, 50, 60: copper plate (copper pattern)
40:
70: LED
80: wire

Claims (10)

A ceramic substrate;
And a copper plate bonded to one or both surfaces of the ceramic substrate by using a direct copper bonding (DCB) method.
The method of claim 1,
The thickness of the copper plate is a substrate for LEDs, characterized in that in the range of 50 ~ 500㎛.
The method of claim 1,
Wherein the ceramic substrate has a via hole filled with a conductive material.
The method of claim 3,
And the diameter of the via hole is within a range of 0.01 to 1.0 mm.
The method of claim 1,
The copper plate formed on one or both surfaces of the ceramic substrate is etched to form a circuit pattern LED substrate.
The method of claim 1,
The copper plate formed on one or both surfaces of the ceramic substrate is etched to form a circuit pattern, wherein the circuit pattern is divided into an electrical connection for driving the LED and a heat dissipation for heat dissipation of the LED.
The method according to claim 6,
Wherein an LED is mounted on the heat dissipation unit, and the LED and the electrical connection unit are energized with a wire.
The method according to claim 6,
The electrical connection portion and the heat dissipation portion of the LED substrate, characterized in that it comprises an upper copper plate, a via hole filled with a conductive material, a lower copper plate.
The method according to claim 6,
Wherein the electrical connection portion and the heat dissipation portion are fabricated together in the same process.
The substrate for LED of any one of Claims 1-9;
And an LED mounted on one surface of the LED mounting board.
KR1020120075269A 2012-07-10 2012-07-10 Substrate for LED and LED heat-sink structure KR101418008B1 (en)

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KR1020120075269A KR101418008B1 (en) 2012-07-10 2012-07-10 Substrate for LED and LED heat-sink structure

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KR101418008B1 KR101418008B1 (en) 2014-07-09

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10162169B2 (en) 2016-06-24 2018-12-25 INTHESMART Inc. Endoscopy system
CN109874223A (en) * 2017-12-05 2019-06-11 同泰电子科技股份有限公司 Flexible circuitry plate structure that can be thermally conductive

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5375552B2 (en) * 2009-11-24 2013-12-25 東芝ライテック株式会社 LIGHT EMITTING DEVICE AND LIGHTING APPARATUS HAVING THE SAME
JP2011091135A (en) * 2009-10-21 2011-05-06 Toshiba Lighting & Technology Corp Light emitting module and lighting system
JP5346272B2 (en) * 2009-12-01 2013-11-20 三ツ星ベルト株式会社 Device mounting substrate and light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10162169B2 (en) 2016-06-24 2018-12-25 INTHESMART Inc. Endoscopy system
US10416437B2 (en) 2016-06-24 2019-09-17 INTHESMART Inc. Endoscopy system
CN109874223A (en) * 2017-12-05 2019-06-11 同泰电子科技股份有限公司 Flexible circuitry plate structure that can be thermally conductive

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