KR20140001505A - Wafer thickness measuring apparatus and method - Google Patents

Wafer thickness measuring apparatus and method Download PDF

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Publication number
KR20140001505A
KR20140001505A KR1020120069270A KR20120069270A KR20140001505A KR 20140001505 A KR20140001505 A KR 20140001505A KR 1020120069270 A KR1020120069270 A KR 1020120069270A KR 20120069270 A KR20120069270 A KR 20120069270A KR 20140001505 A KR20140001505 A KR 20140001505A
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KR
South Korea
Prior art keywords
wafer
measuring
thickness
jig
present
Prior art date
Application number
KR1020120069270A
Other languages
Korean (ko)
Inventor
신미식
윤정수
배승훈
Original Assignee
엘지이노텍 주식회사
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Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020120069270A priority Critical patent/KR20140001505A/en
Publication of KR20140001505A publication Critical patent/KR20140001505A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/0002—Arrangements for supporting, fixing or guiding the measuring instrument or the object to be measured
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/02—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness
    • G01B5/06—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness for measuring thickness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Abstract

The present invention relates to a wafer thickness measuring apparatus and method, the wafer thickness measuring apparatus according to the present invention comprises a jig provided with a support; And a plurality of measuring devices mounted on the jig to measure the thickness of the wafer.

Description

Wafer thickness measuring apparatus and method {WAFER THICKNESS MEASURING APPARATUS AND METHOD}

The present invention relates to an apparatus and method for measuring wafer thickness, and more particularly, to an apparatus and method for measuring wafer thickness, which facilitates wafer thickness measurement and shortens wafer thickness inspection time.

In general, the manufacturing process of a semiconductor device includes a process of forming various thin films such as an insulating film, a dielectric film, a metal film, and the like on a single crystal silicon wafer and a pattern forming process of forming the thin film in a desired pattern.

Thus, the physical properties of the thin film affect various subsequent processes made on top of the thin film.

In particular, in recent years, as semiconductor devices are highly integrated, the number of thin films formed on a substrate increases, and the influence of physical properties of the thin films on subsequent processes is further increased.

Accordingly, after the thin film is formed, it is necessary to evaluate the physical properties of the thin film and reflect it in a subsequent process, and various evaluation processes are performed according to the physical properties of the thin film.

Among the physical properties of the thin film, the thickness and optical constant (refractive index, extinction coefficient) of the thin film have a significant influence on the quality of the semiconductor device. For example, in the case of a gate oxide film, if the desired thickness and optical properties are not guaranteed, the characteristics of the transistor may be degraded, resulting in a decrease in yield.

1 to 3 is a view for explaining a wafer thickness measuring method using a wafer thickness measuring apparatus according to the prior art.

Conventionally, in order to measure the thickness of the wafer thin film and to measure the polishing amount and the flatness (TV5: Thicknees Varication of 5 Points), as shown in FIG. The thickness of the five points of the wafer was measured as shown in FIGS. 2 and 3.

However, according to the related art, in order to measure five points of the wafer, there is an inconvenience of measuring the thickness of the wafer by directly moving the measuring device to the five points.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and by using a jig equipped with a plurality of wafer thickness meters to measure the thickness of several points of the wafer at the same time, making wafer thickness measurement easier and wafer thickness inspection time We want to shorten.

Wafer thickness measuring apparatus according to an embodiment of the present invention for solving the above problems, jig provided with a support; And a plurality of measuring devices mounted on the jig to measure the thickness of the wafer.

According to another embodiment of the present invention, the plurality of measuring devices are arranged in a straight line.

According to another embodiment of the present invention, the plurality of measuring devices includes a first measuring device, a second measuring device, and a third measuring device, wherein the first measuring device measures the thickness of the center point of the wafer and the second measuring device and the first measuring device. 3 The measuring device measures the thickness of both ends of the wafer.

According to another embodiment of the present invention, the jig is a T-shaped jig.

According to another embodiment of the present invention, the jig is made of aluminum (Al) material, and the surface is nickel (Ni) plated.

In the wafer thickness measuring method according to an embodiment of the present invention, a plurality of measuring devices for measuring the thickness of the wafer is mounted on a jig provided with a support, the thickness of the wafer is measured using the plurality of measuring devices, and After rotating a jig equipped with a plurality of measuring instruments, the thickness of the wafer is measured.

According to another embodiment of the present invention, when the plurality of measuring devices are mounted, the plurality of measuring devices are arranged in a straight line.

According to another embodiment of the present invention, when measuring the thickness of the wafer using the plurality of measuring devices, the thickness of the center of the wafer is measured using a first measuring device among the plurality of measuring devices, The thicknesses of both ends of the wafer are measured by using a second measuring instrument and a third measuring instrument.

According to another embodiment of the present invention, after rotating the jig in which the plurality of measuring devices are mounted, when measuring the thickness of the wafer, the center point of the jig is positioned at the center point of the wafer, and the center point of the jig is After the jig is rotated 90 degrees as a reference, the thickness of the wafer is measured.

According to the present invention, since the thickness of several points of the wafer is measured at the same time using a jig in which a plurality of wafer thickness meters are mounted, wafer thickness measurement is easier and wafer thickness inspection time can be shortened.

1 to 3 is a view for explaining a wafer thickness measuring method using a wafer thickness measuring apparatus according to the prior art.
4 to 6 illustrate a wafer thickness measurement apparatus according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail to avoid unnecessarily obscuring the subject matter of the present invention. In addition, the size of each component in the drawings may be exaggerated for the sake of explanation and does not mean a size actually applied.

4 to 6 illustrate a wafer thickness measurement apparatus according to an embodiment of the present invention. A wafer thickness measuring apparatus according to an embodiment of the present invention will be described with reference to FIGS. 4 to 6.

As shown in FIG. 4, the wafer thickness measuring apparatus according to the exemplary embodiment of the present invention includes a jig 410 and a measuring device 420.

A plurality of measuring instruments 420 are mounted on the jig 410 to measure the thickness of the wafer 400. In this case, the plurality of measuring instruments 420 are disposed in a straight line on the jig 410 as shown in FIGS. 5 and 6.

That is, in one embodiment of the present invention, as shown in FIG. 5, the first meter at the first point 421 on the jig 410, the second meter at the second point 422, and the third point 423 at the first point 421. A third measuring device is mounted to measure thickness at three points of the wafer 400. More specifically, at the first point 421, the first measuring device measures the thickness of the center point of the wafer 400, and at the second point 422 and at the third point 423, the second measuring device and 3, the measuring device measures the thickness of both ends of the wafer 400.

After measuring the thickness of the three points of the wafer 400 as described above, the thickness of the wafer 400 is measured by rotating the jig 410 90 degrees again. As described above, when the jig 410 is rotated by 90 degrees, the thickness of the wafer 400 is measured once more, and the thickness of a total of five points can be measured including the center point and four end points of the wafer 400.

On the other hand, the measuring device 420 is configured to be able to adjust the height according to the position of the bolt tab using the bolt in each position so that the height of the plurality of measuring instruments are constant.

The jig 410 is provided with a plurality of supports 411 to stably support the thickness of the wafer 400 of the measuring device 420. As shown in FIG. 5, the jig 410 has a T-shape, and the support 411 is disposed at each end of the T-shaped jig 410.

In this case, the jig 410 may be made of aluminum (Al), which is a lightweight material, in order to reduce the weight but not be deformed by the weight of the plurality of measuring devices 420. In addition, since the jig 410 should be used in a hard polishing and soft polishing process using a diamond slurry and an alkali-based alumina slurry, the surface of the jig 410 is nickel-plated to prevent chemical reaction and corrosion caused by the slurry.

In addition, as shown in FIG. 4, the tab 412 is processed at the measurement position on the jig 410 to adjust and fix the height of the measuring device 420 to measure the wafer thickness. It can be configured to be possible.

Hereinafter, a method of measuring wafer thickness according to an embodiment of the present invention will be described with reference to FIG. 5.

According to an embodiment of the present invention, first, a plurality of measuring instruments 420 for measuring the thickness of the wafer 400 are mounted on the jig 410 provided with the support 411. In this case, the plurality of measuring instruments 420 are disposed in a straight line and mounted on the jig 410.

In this case, when the three measuring instruments 420 are mounted on the jig 410, the first measuring unit, the second measuring unit, and the third measuring unit are disposed on the jig 410 in a straight line so that the three points 3 of the wafer 400 may be disposed. The thickness of the wafer 400 of the point) is measured.

That is, the first measuring device measures the thickness of the center point of the wafer 400 at the first point 421, and the second measuring device and the third measuring device measure the wafer at the second point 422 and the third point 423, respectively. Measure the thickness of both ends of 400).

After measuring the thickness of the three points of the wafer 400 as described above, the thickness of the wafer 400 is measured by rotating the jig 410 90 degrees again. As described above, when the jig 410 is rotated by 90 degrees, the thickness of the wafer 400 is measured once more, and the thickness of a total of five points can be measured including the center point and four end points of the wafer 400.

Therefore, according to the wafer thickness measurement method according to the present invention, since the thickness of the wafer 400 of three points is measured at a time, the thickness of the wafer 400 of five points in total can be measured by two measurements.

In the foregoing detailed description of the present invention, specific examples have been described. However, various modifications are possible within the scope of the present invention. The technical spirit of the present invention should not be limited to the above-described embodiments of the present invention, but should be determined by the claims and equivalents thereof.

400: wafer
410: jig
411: support
420 meter
421: first point
422: second point
423: third point

Claims (10)

Jig provided with support; And
A plurality of measuring instruments mounted on the jig to measure a thickness of the wafer;
Wafer thickness measurement apparatus comprising a. The method according to claim 1,
The plurality of measuring devices,
Wafer thickness measuring apparatus arranged in a straight line. The method according to claim 1,
The plurality of measuring devices,
It consists of a first measuring instrument, a second measuring instrument and a third measuring instrument,
The first measuring device measures the thickness of the center of the wafer and the second measuring device and the third measuring device to measure the thickness of both ends of the wafer. The method according to claim 1,
The jig,
T-shaped jig-in wafer thickness measuring device. The method according to claim 1,
The jig,
Wafer thickness measuring apparatus composed of aluminum (Al) material. The method according to claim 1,
The jig,
Wafer thickness measurement device with a nickel (Ni) plated surface. On the jig provided with a support is equipped with a plurality of measuring devices for measuring the thickness of the wafer,
The thickness of the wafer is measured using the plurality of measuring instruments,
Wafer thickness measuring method for measuring the thickness of the wafer after rotating the jig equipped with the plurality of measuring devices. The method of claim 7,
When the plurality of measuring instruments are mounted,
Wafer thickness measurement method for arranging and mounting the plurality of measuring instruments in a straight line. The method of claim 7,
When measuring the thickness of the wafer using the plurality of measuring instruments,
Measuring the thickness of the center of the wafer using a first measuring device of the plurality of measuring devices,
Wafer thickness measuring method for measuring the thickness of both ends of the wafer by using a second measuring instrument and a third measuring device of the plurality of measuring instruments. The method of claim 7,
After rotating the jig in which the plurality of measuring devices are mounted, when measuring the thickness of the wafer,
Position the center point of the jig to the center point of the wafer,
Wafer thickness measuring method for measuring the thickness of the wafer after rotating the jig 90 degrees with respect to the center point of the jig.
KR1020120069270A 2012-06-27 2012-06-27 Wafer thickness measuring apparatus and method KR20140001505A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120069270A KR20140001505A (en) 2012-06-27 2012-06-27 Wafer thickness measuring apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120069270A KR20140001505A (en) 2012-06-27 2012-06-27 Wafer thickness measuring apparatus and method

Publications (1)

Publication Number Publication Date
KR20140001505A true KR20140001505A (en) 2014-01-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120069270A KR20140001505A (en) 2012-06-27 2012-06-27 Wafer thickness measuring apparatus and method

Country Status (1)

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