KR20130127400A - Cross flow manifold for electroplating apparatus - Google Patents

Abstract

The examples of the present invention relates to apparatuses and methods for plating more than one material electronically on a substrate. In many cases, the material is a metal, and the substrate is a semiconductor wafer. However, the example is not limited. Generally, the examples of the present invention are provided to manufacture a transverse manifold, which is defined on the bottom surface by a channeled plate, on an upper part by the substrate, and on sides by a transverse confinement ring by utilizing a channeled plate, which is located around the substrate. In plating, a fluid enters to the transverse manifold from the upper part through channels of the channeled plate, and from sides through a transverse side inlet located in one side of the transverse confinement ring. Flow paths are combined in the transverse manifold, and flow paths leave in a transverse exit. The transverse exit is located to face the transverse inlet port. The combined flow paths improve plating uniformity.

Description

Cross flow manifold for electroplating equipment {CROSS FLOW MANIFOLD FOR ELECTROPLATING APPARATUS}

This application is directed to US Provisional Application No. 61 / 405,608, entitled “FLOW DIVERTERS AND FLOW SHAPING PLATES FOR ELECTROPLATING CELLS”, filed Oct. 21, 2010 (agent case NOVLP396P); US Provisional Application No. 61 / 374,911, entitled "HIGH FLOW RATE PROCESSING FOR WAFER LEVEL PACKAGING," filed August 18, 2010 (agent case NOVLP367P); And US Provisional Application No. 61 / 361,333, filed Jul. 2, 2010, entitled “ANGLED HRVA” (Agent No. NOVLP366P), which filed on June 29, 2011. Partially filed in US Patent Application Ser. No. 13 / 172,642, Representative Event No. NOVLP367P, entitled "CONTROL OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING," each of which is hereby incorporated by reference in its entirety and for all purposes. do. This application also claims the benefit of priority of US Provisional Application No. 61 / 646,598 (Agent No. NOVLP367X1P), entitled “CROSS FLOW MANIFOLD FOR ELECTROPLATING APPARATUS,” filed May 14, 2012, which is referenced by reference. Are hereby incorporated by reference in their entirety and for all purposes. This application is common to US Provisional Application No. 61 / 736,499 (Agent Case No. LAMRP015P), entitled "ENHANCEMENT OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING," filed December 12, 2012. It may also include features. Each of these applications is incorporated herein in their entirety and for all purposes by reference.

The disclosed embodiments relate to methods and apparatuses for controlling electrolyte hydrodynamics during electroplating. More specifically, the methods and apparatuses disclosed herein include, for example, copper through silicon via (TSV) features, and small microbumping features (eg, copper, nickel, tin) having a width of less than about 50 μm, for example. And tin alloy solders), particularly useful for plating metals on semiconductor wafer substrates.

Electrochemical deposition processes are well established in modern integrated circuit fabrication. In the early 21st century, the transition from aluminum to copper metal line wirings forced the need for electrodeposition processes and plating tools. Most of the complexity has evolved in response to the need for smaller current transmission lines in device metallization layers. These copper lines are formed by electroplating the metal into very thin, high aspect ratio trenches and vias in a methodology commonly referred to as "damascene" processing (pre-passivation metallization).

Electrochemical deposition is now ready to meet the commercial need for complex packaging and multichip wiring techniques commonly and routinely known as through silicon via (TSV) electrical interconnect techniques and wafer level packaging (WLP). These techniques (in comparison with Front End of Line (FEOL) wiring) present some very important challenges inherent in part, due in general to larger feature sizes.

Depending on the form and application of the packaging features (eg, chip to board or chip bonding such as TSV for through chip connection, interconnect redistribution wiring, or flip chip pillars), the plated features are generally In current technologies, larger than about 2 μm and their principal size is usually about 5-100 μm (eg, copper fillers may be about 50 μm). For some on-chip structures, such as power buses, the feature to be plated may be larger than 100 μm. The aspect ratios of the WLP features are typically in the range as high as about 2: 1 (height to width), but are typically about 1: 1 or less, while TSV structures are very high aspect ratios (eg, Around 20: 1).

Reducing the WLP structure sizes from 100-200 μm to less than 50 μm results in a set of inherent problems, because at this scale, hydrodynamic and mass transfer boundary layers are nearly equivalent. For previous generations with larger features, the movement of mass and fluid to the feature is performed by general transmission of the flow fields to the features, but for smaller features, flow Eddies and stagnation can interfere with both the rate and uniformity of mass transfer within the growing feature. Accordingly, new methods are needed to create uniform mass transfer within smaller “microbumps” and TSV features.

Further, when the feature depth is L and the diffusion constant is D, the time constant τ (one-dimensional diffusion equilibrium time constant) for the pure diffusion process is expressed by the following equation.

τ = L ² / 2D (sec).

Assuming a moderate average value for the diffusion coefficient of metal ions (eg 5 × 10 ⁻⁶ cm ² / sec), a relatively large FEOL 0.3 μm deep damascene feature will have a time constant of only about 0.1 msec. The TSV, 50 μm deep of the WLP bump, will have a time constant of several seconds.

In addition to feature size, plating speed differentiates WLP and TSV applications from damaging applications. For many WLP applications, depending on the metal being plated (eg copper, nickel, gold, silver solders, etc.), on the one hand, manufacturing and cost requirements, on the other hand, between technical and technical difficulties (eg For example, there is a balance between the wafer productivity variability and the main productivity goals for wafer requirements within the die and within the feature targets. For copper, this balance is generally achieved at least about 2 μm / min, typically at least about 3-4 μm / min or more. For tin plating, plating rates greater than about 3 μm / minute, plating rates of at least about 7 μm / minute are required for some applications. For nickel and strike gold (eg, low concentration gold flash film layers), the plating rates may be between about 0.1 to 1 μm / minute. In higher plating rate regimes of these metal-related, efficient mass transfer of the metal ions of the electrolyte to the plating surface is important.

In certain embodiments, WIthin a Wafer (WIW), WIthin and among all the features of a particular Die (WID), and also within the individual features themselves (WIthin) In order to achieve good plating uniformity in the individual features themselves (WIF), the plating must be carried out in a very uniform manner over the entire surface of the wafer. High plating rates of WLP and TSV applications present a challenge with regard to the uniformity of the electrodeposited laye. For many WLP applications, plating is radially along the surface of the wafer at most about 5% half range variability (called WiW non-uniformity, single feature of the die at multiple locations across the diameter of the wafer). Measured for type). A similar requirement that is equally challenging is the ability of several features of either different sizes (e.g., feature diameters) or feature density (e.g., isolated or embedded features in the middle of an array of chip dies). Uniform deposition (thickness and shape). This performance detail is commonly referred to as WID nonuniformity. WID non-uniformity is the local variability of the average feature height or other dimension within a given wafer die at a given die location on the wafer (eg, radius mid, center or edge) versus the various feature types as described above (eg, For example, less than 5% half range).

The final challenge, the requirement, is the general control within the feature shape. Without proper flow and mass transfer convection control, after plating, lines or pillars can be inclined in a convex, flat or concave shape in two or three dimensions (eg saddle or dome shapes), although the flat profile is not always , Generally preferred. While meeting these challenges, WLP applications must compete with conventional potentially less expensive pick and place serial routing operations. In addition, the electrochemical deposition for WLP applications can include several non-copper metals such as lead, tin, tin-silver solders, and other under bump metallization materials such as nickel, gold, palladium, and various alloys thereof. May include copper, some of which include copper. Plating of tin-silver near eutectic alloys is an example of a plating technique for alloys plated as lead-free solder that is an alternative to lead-tin eutectic solders.

Certain embodiments herein relate to methods and apparatuses for electroplating one or more materials onto a substrate. In many cases, the material is a metal and the substrate is a semiconductor wafer, but the present embodiment is not so limited. Typically, embodiments herein utilize a channeled plate located near a substrate to cross-flow the manifold defined on the floor by the channeled plate, on the top, and cross-flow by the substrate. On the sides by a limiting ring. During plating, fluid enters the crossflow manifold from the top through the channels of the channeled plate and through the crossflow lateral inlet located on one side of the crossflow restriction ring. Flow paths are coupled at the crossflow manifold and exit at the crossflow outlet, which is located opposite the crossflow inlet. These combined flow paths result in improved plating uniformity.

In one aspect of embodiments herein, an apparatus is provided, comprising: (a) an electroplating chamber configured to include an electrolyte and an anode during electroplating metal on a substantially planar substrate; (b) a substrate holder configured to hold the substantially planar substrate such that the plating surface of the substantially planar substrate is separated from the anode during electroplating; (c) an ionically resistive element comprising a substrate opposing surface separated by a gap of about 10 mm or less from the plated surface of the substantially planar substrate, the ionically resistive element being substantially planar during electroplating. The ionically resistive element being at least coextensive with the plating surface of the phosphor substrate, the ionically resistive element adapted to provide ion transport through the ionically resistive element during electroplating; (d) an inlet to said gap for introducing electrolyte into said gap; And (e) an outlet for said gap for receiving electrolyte flowing in said gap, said inlet and outlet being near azimuthally opposing peripheral locations on said plated surface of said substantially planar substrate during electroplating. And inlet and outlet to create a cross-flowing electrolyte in the gap to generate or maintain shear forces on the plated surface of the substantially planar substrate during electroplating. In some embodiments, the inlet of the device is divided into two or more azimuthally distinct sections, and the device is adapted to independently control the amount of electrolyte flowing into the azimuthally distinct sections of the inlet. It also includes a mechanism.

In certain embodiments, the ionically resistive element has certain characteristics. For example, in some cases, the ionically resistive element has a porosity of about 1-10% (eg, between about 2-5%). The ionically resistive element comprises at least about 1000 paths (eg, at least about 3000, at least about 5000, at least about 6000, or at least about 9000) through which the electrolyte may flow through during electroplating. . The paths may be configured to deliver electrolyte through the ionically resistive element toward the substrate at a rate of at least about 3 cm / s (eg, at least about 5 cm / s, or at least about 10 cm / s) at the outlet of the paths. have. In many cases, the ionically resistive element is configured to create an electric field during electroplating and to control electrolyte flow characteristics near the substrate.

The apparatus further includes a lower manifold region located below the lower face of the ionically resistive element, the lower surface facing away from the substrate holder. In some embodiments, the apparatus further comprises one or more supply channels configured to deliver electrolyte from both the central electrolyte chamber and the central electrolyte chamber to both the inlet and the lower manifold region. Pumps for delivering electrolyte to and / or from the middle electrolyte chamber may be used in many cases. In some embodiments, the pump and the inlet are at least about 3 cm / s (eg, at least about 5 cm / s, or at least about 10 cm / across a center point on the plated surface of the substantially planar substrate). s, or at least about 15 cm / s, or at least about 20 cm / s) to deliver electrolyte in the gap.

In various embodiments, the apparatus includes a crossflow injection manifold fluidly coupled to the inlet. The crossflow injection manifold may be defined at least in part by the cavity of the ionically resistive element. In some embodiments flow direction pointing elements may be located in the gap, and the flow direction pointing elements may be adapted to allow electrolyte to flow from the inlet to the outlet in a substantially linear flow path. In some cases, the flow direction designating elements are partitions / pins located downstream from the inlet and are configured to divide the electrolyte flowing in the gap into adjacent streams.

Some embodiments include a flow restriction ring that may be positioned over the periphery of the ionically resistive element. The flow restricting ring helps to form a cross flow across the face of the substrate. In cases where a crossflow restricting ring is used, the gasket may be located between the ionically resistive element and the flow restricting ring. The gasket helps to provide good sealing. In various embodiments a membrane frame may be used to support the membrane. The membrane may separate the electroplating chamber into a cathode chamber and an anode chamber. In various embodiments, a weir wall is located radially outward of the gap and is configured to receive electrolyte flowing through the outlet. The apparatus may also include a mechanism for rotating the substrate and / or substrate holder during plating. In some cases, the ionically resistive element is positioned parallel or substantially parallel to the substrate during electroplating.

In various embodiments, the inlet may span an arc near the perimeter of the plated surface of the substrate. In some embodiments, the inlet spans an arc between about 90-180 degrees (eg, between about 120-170 degrees, between about 140-150 degrees). In certain embodiments, the inlet is over an arc of about 90 degrees. In another embodiment, the inlet spans an arc of about 120 degrees. In some embodiments, the inlet is separated into a plurality of azimuthally discrete segments. These azimuthally distinct segments may also be separated fluidically. Azimuthally distinct segments of the inlet may be supplied by a plurality of electrolyte sources and a feed inlet. In some implementations, the apparatus may include one or more flow control elements designed or configured to independently control volumetric flow rates of electrolyte to different electrolyte feed inlets. Flow control elements may include restricting elements located in one or more electrolyte flow paths. In some cases, the limiting elements are rods.

In another aspect of the embodiments herein, a method of electroplating a substrate is provided. The method comprises: (a) receiving a substantially planar substrate in a substrate holder, wherein the plating surface of the substantially planar substrate is exposed and the substrate holder is electrically plated of the substantially planar substrate. Receiving the substrate configured to hold the substantially planar substrate to be separated from the anode during plating; (b) immersing the substantially planar substrate in an electrolyte, wherein a gap of about 10 mm or less is formed between the plated surface of the substantially planar substrate and the top surface of the ion resistive element, wherein the ion resistive element is Immersing the electrolyte in at least the same space as the plating surface of the substantially planar substrate, wherein the ionically resistive element is adapted to provide ion transport through the ionically resistive element during electroplating; (c) contacting the substantially planar substrate in the substrate holder (i) from a side inlet to the gap and out of a side outlet and (ii) from below the ionically resistive element, the Acts to flow electrolyte through the ionically resistive element, into the gap and out of the side outlet, wherein the inlet and outlet are located near azimuthally opposing peripheral locations on the plated surface of the substantially planar substrate. Flowing the electrolyte, wherein the inlet and outlet and a plurality of fins near the inlet are designed or configured to produce or maintain a cross-flow electrolyte in the gap during electroplating; (d) rotating the substrate holder; And (e) electroplating material onto the plated surface of the substantially planar substrate while flowing the electrolyte as in (c) above. The inlet may be separated into two or more azimuthally separate and fluidically separated sections, and the flow of electrolyte to the azimuthically separate sections may be controlled independently. In some cases, at least two sections of the inlet receive different electrolyte flow rates.

In some embodiments, the act of flowing the electrolyte in (c) is at least about 3 cm / s (eg, at least about 5 cm / s, at least about across a center point on the plated surface of the substantially planar substrate). Flowing the electrolyte at a crossflow rate of 10 cm / s, or at least about 20 cm / s. In these and other embodiments, the electrolyte may exit the ionically resistive element at a rate of at least about 3 cm / s (eg, at least about 5 cm / s, or at least about 10 cm / s).

In some embodiments, the side outlet may be separated into two or more azimuthally separate side outlet sections. The method may also include the act of flowing the electrolyte at different flow rates through the at least two azimuthally separate outlet sections. In certain embodiments, flowing the electrolyte in (ii) of (c) includes flowing the electrolyte so that the electrolyte impinges on the plated surface of the substrate. In some cases, flow direction pointing elements may be located in the gap. Flow directing elements may allow electrolyte to flow from the side inlet to the side outlet in a substantially linear flowpath. In some cases, these flow direction designating elements are partitions / pins. The pins may be located downstream or at least partially downstream of the lateral inlet. In some cases, the total flow rate of the electrolyte into the gap may be between about 1-60 L / min (eg, between 6-60 L / min or between 5-25 L / min, or between 15-25 L / min). In one embodiment, the total flow rate of electrolyte into the gap is about 12 L / min. In another embodiment, this flow rate is about 20 L / min.

These and other features will be described below with reference to the associated drawings.

1A shows a perspective view of a substrate holding and positioning apparatus for electrochemically processing semiconductor wafers.
1B illustrates a cross-sectional view of a substrate holding assembly portion that includes a cone and a cup.
1C shows a simplified diagram of an electroplating cell that may be used to practice the embodiments herein.
1D-1J show embodiments of various electroplating apparatus that may be used to enhance cross flow across the surface of a substrate, along with top views of flow dynamics achieved when implementing these embodiments. .
2 shows an exploded view of various parts of an electroplating apparatus that are generally present in a cathode chamber in accordance with certain embodiments disclosed herein.
3A shows a close up of a crossflow lateral inlet and peripheral hardware in accordance with certain embodiments herein.
3B shows a close up of a crossflow outlet, a CIRP manifold inlet, and peripheral hardware in accordance with various disclosed embodiments.
4 shows a cross-sectional view of various parts of the electroplating apparatus shown in FIGS. 3A-3B.
5 shows a showerhead and crossflow injection manifold divided into six individual segments according to certain embodiments.
FIG. 6 shows a top view of the CIRP and associated hardware according to an embodiment of the present application, particularly focused on the inlet side of the crossflow.
7 illustrates a simplified top view of CIRP and associated hardware showing both inlet and outlet sides of a crossflow manifold in accordance with various disclosed embodiments.
8A-8B show an initial design 8a and a modified design 8b of the crossflow inlet region according to certain embodiments.
9 shows an embodiment of CIRP partially covered by a flow restriction ring and supported by a frame.
10 is a graph of thickness versus wafer position, showing nonuniformity from center to edge that occurs when no crossflow side inlets are used.
FIG. 11 is a graph of thickness versus wafer location showing improvement in center to edge uniformity that may be achieved when using a crossflow side inlet. FIG.
FIG. 12 shows various graphs of thickness versus wafer location, showing an improvement in feature shape uniformity that may be achieved using crossflow side inlets.
FIG. 13 is a graph of bump composition (percent silver) versus wafer position for when no crossflow side inlets are used.
FIG. 14A shows a simplified top view of the CIPR and flow restriction ring with no inlet on either side.
14B illustrates a simplified top view of the CIRP, flow restriction ring, and crossflow side inlet in accordance with various embodiments disclosed herein.
15A-15B show crossflow through a crossflow manifold for the device shown in FIGS. 14A-14B, respectively.
16A-16B show modeling results showing the cross-flow rates during plating in the plane near the substrate, respectively, for the apparatus shown in FIGS. 14A-14B.
17A-17B are graphs showing horizontal crossflow velocity versus wafer position during plating for the apparatus shown in FIGS. 14A-14B, respectively.
18A-18B show different portions of the substrate when no plating fluid is delivered through crossflow side inlet 18a and when a certain amount of plating fluid is delivered through crossflow side inlet 18b. Modeling results indicative of the cross-flow velocity achieved for
19A-19B show a static imprint test for when no fluid is delivered through the crossflow side inlet 19a and when a certain amount of fluid is delivered through the crossflow side inlet 19b. ) Shows the results.
20 shows the flow rate versus crossflow showerhead pressure when each line is generated using a different set of fluid conditioning rods that restrict flow to the crossflow injection manifold / showerhead, or CIPR manifold / CIRP. It is a graph.
21A-21B show modeling results showing the y velocity (velocity towards the wafer) of the flow in the crossflow manifold for two different confinement ring / crossflow side inlet designs.
FIG. 21C shows modeling results showing the flow pattern achieved in the crossflow manifold for the case shown in FIG. 21A.
22A-22B show modeling results indicative of the crossflow velocity for two different arrangements of showerhead holes.

In this application, the terms “semiconductor wafer”, “wafer”, “substrate”, “wafer substrate”, and “partially fabricated integrated circuit” are used interchangeably. Those skilled in the art will appreciate that the term “partially fabricated integrated circuit” may refer to a silicon wafer during any of many operations of integrated circuit fabrication on a silicon wafer. The following detailed description assumes that the invention is implemented on a wafer. Often, semiconductor wafers have a diameter of 200 mm, 300 mm, or 450 mm. However, the present invention is not so limited. The workpiece may be of various shapes, sizes, and materials. In addition to semiconductor wafers, other workpieces that may benefit from the present invention include various articles such as printed circuit boards and the like.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments shown. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the disclosed embodiments. While the disclosed embodiments will be described in conjunction with the specific embodiments, it will be understood that it is not intended to limit the disclosed embodiments.

Described herein are apparatus and methods for electroplating one or more metals on a substrate. Embodiments are generally described when the substrate is a semiconductor wafer; The present invention is not so limited.

The disclosed embodiments include an electroplating apparatus and methods comprising the same, which are configured to control electrolyte hydrodynamics during plating such that high uniform plating layers are obtained. In specific embodiments, the disclosed embodiments may be described in terms of impinging flow (flow directed to or perpendicular to the workpiece surface), and (often “cross flow” or flow having a velocity parallel to the workpiece surface). Methods and apparatus for generating combinations of shear flow (referred to as " referred to ").

One embodiment includes the following features: (a) a plating chamber configured to contain an electrolyte and an anode during electroplating metal on a substantially planar substrate; (b) a substrate holder configured to hold a substantially planar substrate such that the plating surface of the substrate is separated from the anode during electroplating; (c) a channeled ionically resistive element comprising a substrate facing surface substantially parallel to or separate from the plating surface of the substrate during electroplating, wherein the channelized ionically resistive element comprises a plurality of non- Communication channels, wherein the non-communication channels include channeled ionically resistive elements that allow movement of the electrolyte through the element during electroplating; And (d) a mechanism for generating and / or applying shear force (cross flow) to the electrolyte flowing at the plating surface of the substrate. Although the wafer is substantially planar, the wafer also generally has one or more fine trenches and may have one or more portions of the surface masked for electrolyte exposure. In various embodiments, the apparatus also includes a mechanism for rotating the substrate and / or the channeled ion resistant element while allowing the electrolyte to flow in the electroplating cell in the direction of the substrate plating surface.

In certain implementations, the mechanism for applying crossflow is, for example, an inlet having suitable flow direction designation and distribution means on or near the periphery of the channelized ion resistant element. The inlet directs the direction of the catholyte that crosses along the substrate facing surface of the channeled ion resistant element. The inlet is asymmetric in azimuth and follows the circumference of the partially channeled ionically resistive element and has one or more gaps and creates a crossflow injection manifold between the channeled ionically resistive element and the substantially planar substrate during electroplating. define. Other elements are optionally provided for working in conjunction with the crossflow injection manifold. It may comprise a cross flow injection flow distribution showerhead and a cross flow restriction ring, which are further described below in connection with the figures.

In certain embodiments, the apparatus includes at least about 3 cm / s (eg, at least about 5 cm / s, or at least about 10 cm / s) exiting the holes of the ionically resistive element channeled during electroplating. In order to produce an average flow rate, it is configured to enable the flow of the electrolyte toward the substrate plating surface or in a direction perpendicular to the substrate plating surface. In certain embodiments, the device is about 3 cm / sec or greater (eg, about 5 cm / s or greater, about 10 cm / s or greater, across the center point of the plated surface of the substrate) , To operate under conditions that produce an average transverse electrolyte rate (about 20 cm / s or greater). These flow rates (ie, the flow rate through the holes of the ion resistive element, and the flow rate across the plated surface of the substrate), in certain embodiments, the electroplating cell utilizes a total electrolyte flow rate of about 20 L / min and is approximately 12 It is suitable for the case of an inch diameter substrate. Embodiments herein may be practiced with various substrate sizes. In some cases, the substrate has a diameter of about 200 mm, about 300 mm, or about 450 mm. In addition, embodiments herein may be practiced at a wide variety of overall flow rates. In certain embodiments, the total electrolyte flow rate is between about 1 L / min-6 L / min, between about 6 L / min-60 L / min, between about 5 L / min-25 L / min, or about 15 L / Min-25 L / min. The flow rates achieved during plating may be limited by certain hardware constraints such as the size and capacity of the pump used. Those skilled in the art will appreciate that the flow rates cited herein may be higher when the disclosed techniques are implemented with larger pumps.

In some embodiments, the electroplating apparatus includes a separate anode chamber and a cathode chamber, each of the two chambers having different electrolyte compositions, electrolyte circulation loops, and / or hydrodynamics. Ion permeable membranes may be used to inhibit direct convective movement of material (flow due to flow) of one or more components between the chambers and to maintain a desired separation between the chambers. The membrane may block bulk electrolyte flow and allow the movement of ions such as cations while prohibiting the movement of certain species such as organic additives. In certain embodiments, the membrane contains NAFION ^™ or related ion selective polymer from DuPont. In other cases, the membrane does not include an ion exchange material, but instead a microporous material. Conventionally, the electrolyte in the cathode chamber is referred to as "catholyte" and the electrolyte in the anode chamber is referred to as "anode solution". Often, the anolyte and catholyte have different compositions, the anolyte containing little or no plating additives (eg, accelerators, inhibitors, and / or levelers), catholyte Contains significant concentrations of such additives. The concentration of metal ions and acids also often differs between the two chambers. Examples of electroplating devices that include separate anode chambers are described in US Pat. No. 6,527,920, filed November 3, 2000 [Agent Case No. NOVLP007]; US Patent No. 6,821,407, filed Aug. 27, 2002 (Agent No. NOVLP048); US Patent No. 8,262,871 filed on December 17, 2009, Representative Event No. NOVLP308, each of which is incorporated herein by reference in its entirety.

In certain embodiments, the anode membrane does not need to include an ion exchange material. In some examples, the membrane is made of a microporous material, such as polyethersulfone, manufactured by Koch Membrane, Wilmington, Massachusetts. This membrane type is most clearly applicable to inert anode applications such as tin-silver plating and gold plating, but may also be used for soluble anode applications such as nickel plating.

In certain embodiments, and as described more fully elsewhere herein, catholyte is injected into a manifold region, hereinafter referred to as " CIRP manifold region, " where electrolyte is supplied, accumulated, It is then distributed and passes substantially uniformly through the various non-communication channels of the CIRP directly towards the wafer substrate.

In the following discussion, when referring to upper and lower features (or similar terms such as upper and lower features, etc.) or elements of the disclosed embodiments, the terms upper and lower portions are merely used for convenience, Represent only a single frame of a reference or implementation of the invention. Other configurations are possible, for example, the upper component and the lower component are inverse to gravity and / or the upper component and the lower component are the left and right components or the right and left components.

While some aspects described herein may be used in various types of plating apparatus, for the sake of brevity and clarity, many of the examples are wafer-face-down, “fountain” plating apparatus. Will be associated with In such an apparatus, the workpiece to be plated (generally, a semiconductor wafer in the examples presented herein) is generally substantially horizontal (in some cases, which may vary a few degrees from the actual horizontal, in part or during the entire plating process). With an orientation, power may be supplied to rotate during plating, generally yielding a vertically upwardly directed electrolyte convection pattern. The accumulation of impingement flow material from the center of the wafer to the edge, as well as the inherent higher angular velocity of the rotating wafer at the edge of the wafer relative to the center of the wafer, results in a radially increasing steep (parallel to wafer) flow rate. Create An example of the absence of a fractional plating class of cells / devices is Novellus Systems, Inc., San Jose, California. Produced by Novellus Systems, Inc. Sabre® electroplating system available from. In addition, fractional electroplating systems are described, for example, in U.S. Patent No. 6,800,187 filed on August 10, 2001 [Agent No. NOVLP020], and U.S. Patent No. 8,308,931 filed November 7, 2008 [ Agent event number NOVLP299, which are incorporated herein by reference in their entirety.

The substrate to be plated is generally planar or substantially planar. As used herein, a substrate having features such as trenches, vias, photoresist patterns, and the like is considered to be substantially planar. Often these features are microscopic, but not necessarily. In many embodiments, one or more portions of the surface of the substrate may be masked from exposure to the electrolyte.

The following description of FIGS. 1A and 1B provides general, non-limiting aspects to assist in understanding the apparatus and methods described herein. 1A provides a perspective view of a wafer holding and positioning apparatus 100 for electrochemically processing semiconductor wafers. Apparatus 100 includes wafer engagement components (often referred to herein as "clamshell" components). The actual clamshell includes a cup 102 and a cone 103 that allows pressure to be applied between the wafer and the seal, thereby securing the wafer to the cup.

The cup 102 is supported by a strut 104, which is connected to the top plate 105. This assembly 102-105, collectively the assembly 101, is driven by a motor 107 via the spindle 106. The motor 107 is attached to the mounting bracket 109. Spindle 106 transmits torque to the wafer (not shown in this figure) to allow rotation during plating. An air cylinder (not shown) in the spindle 106 also provides a vertical force between the cup and the cone 103 to create a seal between the wafer and a sealing member (lipseal) housed within the cup. For the purposes of this discussion, the assembly comprising components 102-109 is collectively referred to as wafer holder 111. However, it is noted that the concept of "wafer holder" generally extends to various combinations and subcombinations of components that engage a wafer to enable movement and positioning of the wafer.

A tilting assembly comprising a first plate 115 slidably connected to the second plate 117 is connected to the mounting bracket 109. A drive cylinder 113 is connected to both plate 115 and plate 117 at pivot joints 119 and 121, respectively. Thus, the drive cylinder 113 provides a force to the sliding plate 115 (and thus the wafer holder 111) via the plate 117. The far end of the wafer holder 111 (ie, the mounting bracket 109) is moved along an arc path (not shown) that defines the contact area between the plates 15 and 117, and thus the proximal end of the wafer holder 111. (Ie cup and cone assembly) is tilted onto the virtual pivot. This allows the wafer to enter into the plating bath at an angle.

The entire apparatus 100 is lifted vertically up or down to immerse the proximal end of the wafer holder 111 in the plating solution through another actuator (not shown). Thus, the two component positioning mechanisms both tilt vertically along the trajectory perpendicular to the electrolyte and tilting movement (the ability to immerse the wafer at an angle) to allow deflection from a horizontal orientation (parallel to the electrolyte surface) relative to the wafer. To provide. A more detailed description of the mobile capabilities and associated hardware of the apparatus 100 is described in US Pat. No. 6,551,487 [Agent No. NOVLP022], filed May 31, 2001 and issued April 22, 2003. Which is hereby incorporated by reference in its entirety.

Note that the apparatus 100 is generally used with a specific plating cell having an anode (eg, copper anode or nonmetal inert anode) and a plating chamber housing the electrolyte. The plating cell may also include tubing or tubing connections for circulating the electrolyte through the plating cell and with respect to the workpiece being plated. It may also include membranes or other separators designed to maintain different electrolyte chemistries in the anode compartment and the cathode compartment. In one embodiment, one membrane is used to define an anode chamber comprising an electrolyte that is substantially free of inhibitors, promoters, or other organic plating additives, or in other embodiments, an anolyte and catholyte solution The inorganic plating compositions are substantially different. Means for transferring the anolyte to the catholyte or the main plating bath may also optionally be supplied by physical means (eg direct pumping including valves or overflow trough).

The following description provides more details on the cup and cone assembly of the clamshell. FIG. 1B shows a portion 101 of an assembly 100 that includes a cone 103 and a cup 102, in the form of a cross sectional view. Note that this figure is not to be considered an actual depiction of the cup and cone product assembly, but rather a stylized depiction for discussion purposes. The cup 102 is supported by the top plate 105 via struts 104 attached via screws 108. In general, cup 102 provides a support on which wafer 145 can be placed. It includes an opening through which electrolyte from the plating cell can contact the wafer. Note that the wafer 145 has a front surface 142 where plating occurs. The periphery of the wafer 145 lies on the cup 102. In order to keep the cone 103 in place during plating, the cone 103 is pressed against the back side of the wafer.

To load the wafer into 101, the cone 103 is lifted up to the position shown by the spindle 106 until the cone 103 touches the top plate 105. From this position, a gap is created between the cup and the cone, into which the wafer 145 can be inserted and thus loaded into the cup. The cone 103 then descends down to engage the wafer with respect to the periphery of the cup 102 as shown, and electrical contact past the lip seal 143 radially along the outer periphery of the wafer. Pairs of sets (not shown in FIG. 1B).

The spindle 106 transmits both the vertical force that causes the cone 103 to engage the wafer 145 and the torque that rotates the assembly 101. These transferred forces are represented by arrows in FIG. 1B. Note that wafer plating generally occurs while the wafer is rotating (as indicated by the dashed arrow at the top of FIG. 1B).

The cup 102 has a compressible lip seal 143, which forms a fluid-tight seal when the cone 103 engages the wafer 145. Vertical forces from the cone and wafer compress the lip seal 143 to form a fluid seal seal. The lip seal prevents the electrolyte from contacting the backside of the wafer 145 (which can introduce contaminating species such as copper or tin ions directly into the silicon) and from the sensitive components of the device 101. In addition, there may be seals positioned between the interface of the cup and the wafer that form the fluid seal seals that further protect the backside (not shown) of the wafer 145.

Cone 103 also includes a seal 149. As shown, the seal 149 is located near the upper region of the cup and the edge of the cone 103 when engaged. This also protects the backside of the wafer 145 from any electrolyte that may enter the clam cell from above the cup. Seal 149 may be attached to a cone or cup, and may be a single seal or a multi-component seal.

At the start of plating, the cone 103 rises above the cup 102 and the wafer 145 is introduced into the assembly 102. When the wafer is initially introduced into the cup 102-generally by a robotic arm-its front face 142 is slightly laid on the lip seal 143. During plating, the assembly 101 rotates to help achieve uniform plating. In subsequent figures, assembly 101 is shown in a simpler format with respect to components that control the hydrodynamics of the electrolyte at wafer plating surface 142 during plating. Thus, an overview of fluid shear and mass transfer in the workpiece is as follows.

As shown in FIG. 1C, the plating apparatus 150 includes a plating cell 155 housing the anode 160. In this embodiment, the electrolyte 175 flows through the opening in the anode 160 and flows centrally into the cell 155, and the electrolyte is channelized ion resistant with vertically oriented (not cross) through holes. Passing through the element 170, the electrolyte flows through these through holes and then impinges on the wafer 45, which is held in the wafer holder 101 and positioned and moved by the wafer holder 101. Channelized ion resistant elements, such as reference numeral 170, provide a uniform collision flow on the wafer plating surface. According to certain embodiments described herein, an apparatus utilizing such channelized ion resistant elements includes plating under high deposition rate regimes, such as for WLP and TSV applications. It is constructed and / or operated in a manner that facilitates high rate and high uniformity plating across the face of the wafer. Any or all of the various embodiments described can be implemented in the context of TSV and WLP applications as well as damascene.

1D-1J relate to certain techniques that may be used to allow cross flow to cross the surface on which the substrate is plated. The various techniques described in connection with these figures suggest alternative strategies for promoting cross flow. As such, the particular elements described in these figures are optional and not present in all embodiments.

In some embodiments, the electrolyte flow ports are configured to assist transverse flow with or only in combination with a flow shaping plate and a flow diverter, as described herein. Various embodiments are described below in connection with flow shaping plating, but the invention is not so limited. In certain embodiments, the size of the electrolyte flow vectors across the wafer surface is larger near the vent or gap, progressively smaller across the wafer, and minimum within the pseudo chamber farthest from the vent or gap. Note that it is known to be. As shown in FIG. 1D, by using properly configured electrolyte flow ports, the magnitude of these transverse flow vectors is more uniform across the wafer surface.

FIG. 1E shows a simple cross sectional view of the plating cell 700 with the wafer holder 101 partially immersed in the electrolyte 175 in the plating bath 155. The plating cell 700 includes a flow shaping plate 705 such as those described herein. The anode 160 is below the plate 705. Above the plate 705 is a flow diverter 315. In this figure, the vent or gap (outlet) in the flow diverter is on the right side of the figure, whereby the lateral flow passes from left to right as indicated by the maximum dashed arrow. The series of smaller longitudinal arrows indicate flow through the vertically oriented through-holes in plate 705. Also below the plate 705 is a series of electrolyte inlet flow ports 710 that introduce electrolyte into the chamber below the plate 705. In this figure, there is no membrane separating the anode and cathode chambers, but it can also be included in such plating cells without departing from the scope of the present description.

In this embodiment, the flow ports 710 are distributed radially about the inner wall of the cell 155. In certain embodiments, a vent in a pseudo chamber formed between one or more of these flow ports, eg, wafer, plate 705 and flow diverter 315, to improve transverse flow across the wafer plating surface. Or flow ports on the right side close to the gap (as shown) are blocked. In this way, impingement flow is allowed through all through holes in plate 705, but the pressure at the left side at the end of the gap or vent in the pseudo chamber is higher, thus the wafer surface (in this embodiment, at the left side) The transverse flow over the flow to the right is improved. In certain embodiments, blocked flow ports are positioned about an azimuth angle that is at least equal to the azimuth angle of the segmented portion of the flow diverter. In certain embodiments, electrolyte flow ports on a 90 ° azimuth section of the circumference of the electrolyte chamber below the flow shaping plate are blocked. In one embodiment, this 90 ° azimuth section is registered as an open segment (outlet) of the flow diverter ring.

In other embodiments, the electrolyte inlet flow port or ports are configured to apply a higher pressure in the region below the flow diverter portion at the end of the vent or gap (indicated by Y in FIG. 1E). In some instances, simply physically blocking the selected inlet ports (eg, via one or more shut off valves) is more convenient and more flexible than designing a cell with specially configured electrolyte inlet ports. This is true because the configuration of the flow shaping plate and associated flow diverter can vary according to different desired plating results, and therefore it is more flexible enough to be able to change the electrolyte inlet configuration on a single plating cell.

In other embodiments, whether blocking or not blocking one or more electrolyte inlet ports, the dam, baffle, or other physical structure is configured to apply a higher pressure in an area below the flow diverter portion at the end of the vent or gap. . For example, referring to FIG. 1F, baffle 720 is configured to apply higher pressure to the area under the flow diverter portion at the end of the vent or gap (indicated by Y in FIG. 1F). FIG. 1G is a top view of the plating cell 155 showing no wafer holder 101, flow diverter 315 or flow shaping plate 705, with an electrolyte flow through which baffle 720 diverges from ports 720. To promote confluence in region Y , thereby increasing the pressure in that region (as described above). Those skilled in the art will, for example, describe a horizontal, channeling flow of electrolyte so as to create a higher pressure zone, thereby facilitating transverse flow across the wafer surface in the pseudo chamber where the shear flow vectors are substantially uniform. It will be appreciated that a physical structure having vertical, inclined or other elements may be oriented in a number of different ways.

Some embodiments include electrolyte inlet flow ports configured for lateral flow increase with respect to flow shaping plate and flow diverter assemblies. FIG. 1H shows a cross-sectional view of components of plating apparatus 725 for plating copper onto wafer 145 that is held, positioned and rotated by wafer holder 101. The apparatus 725 includes a plating cell 155 that is a dual chamber cell and an electrolyte, and the plating cell 155 has an anode chamber having a copper anode. The anode chamber and the cathode chamber are spaced apart by a cationic membrane 740 supported by the support member 735. The plating apparatus 725 includes a flow shaping plate 410 as described herein. The flow diverter 325 is on top of the flow shaping plate 410 and helps to create a transverse shear flow as described herein. Catholyte is introduced into the cathode chamber (membrane 740 described above) through flow ports 710. From the flow ports 710, catholyte passes through the flow plate 410 as described herein and creates a collision flow on the plating surface of the wafer 145. In addition to the catholyte flow ports 710, an additional flow port 710a introduces catholyte at its exit at the end of the vent or gap of the diverter 325. In this embodiment, the outlet of the flow port 710a is formed as a channel in the flow shaping plate 410. The functional result is that catholyte flow is introduced directly into the pseudo chamber formed between the flow plate and the wafer plating surface to improve transverse flow across the wafer surface and thereby generate flow vectors across the wafer (and flow plate 410). Is to standardize.

FIG. 1I shows a flow diagram illustrating flow port 710a (from FIG. 1H). As can be seen in FIG. 1I, the outlet of flow port 710a spans 90 degrees of the inner circumference of flow diverter 325. Those skilled in the art will appreciate that the dimensions, configurations, and locations of the ports 710a may vary without departing from the scope of the present invention. Those skilled in the art will also appreciate that equivalent configurations include having catholyte outlet from a port or channel in flow diverter 325 and / or combining with a channel as shown in FIG. 1H (in flow plate 410). I will understand. Other embodiments include one or more ports on the (bottom) sidewall of the flow diverter, ie, the sidewall closest to the flow shaping plate top surface where one or more ports are located in the portion of the flow diverter opposite the vent or gap. FIG. 1J illustrates a flow diverter 750 assembled with a flow shaping plate 410, where the flow diverter 750 catholyte flow ports supply electrolyte from a diverter against a gap in the flow diverter. 710b. Flow ports such as 710a and 710b may supply electrolyte at any angle relative to the wafer plating surface or the flow shaping plate top surface. One or more flow ports may deliver a collision flow to the wafer surface and / or transverse (shear) flow.

In one embodiment, for example, as described in connection with FIGS. 1H-1J, a flow shaping plate as described herein is used in combination with a flow diverter, where (as described herein) Flow ports configured for improved lateral flow are also used with the flow plate / flow diverter assembly. In one embodiment, the flow shaping plate has a non-uniform hole distribution and in one embodiments has a spiral hole pattern.

Terms and Flow  Paths

Numerous drawings are provided to further illustrate and describe the embodiments disclosed herein. The drawings include in particular various views of structural elements and flow paths associated with the disclosed electroplating apparatus. These elements are given specific names / reference signs and are used consistently to describe FIGS. 2 to 22a and 22b.

The following embodiments usually assume that the electroplating apparatus comprises a separate anode chamber. Features described are included in the cathode chamber, which includes a membrane 202 and a membrane frame 274 that separate the anode chamber from the cathode chamber. Many possible anode and anode chamber configurations may be used. In the following embodiments, the catholyte contained in the cathode chamber is cross-flowed. Manifold 226 or channelized ion resistant plate manifold 208 or catholyte is located primarily in either of the channels 258, 262 for delivering these two individual manifolds.

Most of the discussion in the following discussion focuses on controlling catholyte in the crossflow manifold 226. The catholyte enters the crossflow manifold 226 through two separate entry points: (1) channelized ion resistant plate 206 and (2) crossflow initiation structure 250. The catholyte reaching the crossflow manifold 226 through the channels in the CIRP 206 is directed towards the face of the workpiece, generally in a substantially vertical direction. Such channel delivery catholyte may form small jets that impinge on the face of the workpiece, which is generally rotating slowly (eg, between about 1 to 30 rpm) relative to the channeled plate. The catholyte reaching the crossflow manifold 226 through the crossflow initiation structure 250, in contrast, is directed substantially parallel to the face of the workpiece.

As indicated in the foregoing description, the " channelized ion resistant plate " 206 (or " channelized ion resistant element " or "CIRP") is made up of the working electrode (wafer or substrate) and counter electrode (a) during plating. Position), shaping the electric field and controlling the electrolyte flow characteristics. The various figures herein show the relative position of the channeled ion resistant plate 206 relative to other structural features of the disclosed apparatus. One embodiment of such an ionically resistive element 206 is described in US Pat. No. 8,308,931 filed on November 7, 2008, Representative Event No. NOVLP229, which was previously incorporated herein by reference in its entirety. The channelized ion resistant plates described herein are suitable for improving radial plating uniformity on wafer surfaces such as those comprising very thin resistive seed layers or those comprising relatively low conductivity. Other aspects of certain embodiments of the channelized element are described below.

" Membrane frame " 274 (sometimes referred to in other documents as anode membrane frame) is a structural element employed in some embodiments that support membrane 202 separating the anode chamber from the cathode chamber. It may have other features related to certain embodiments disclosed herein. In particular, with reference to embodiments of the figures, flow channels 258 for delivering catholyte toward the showerhead 242 and the crossflow manifold 226 configured to deliver the cross-catholyte to the crossflow manifold 226. , 262). Membrane frame 274 may also include a cell weir wall, useful for determining and adjusting the highest level of catholyte. The various figures herein show the membrane frame in the context of other structural features associated with the disclosed crossflow device.

Referring again to FIG. 2, membrane frame 274 is generally a rigid structural member that holds membrane 202, which is an ion exchange membrane that is responsible for separating the anode chamber from the cathode chamber. As described, the anode chamber may comprise an electrolyte of a first composition, while the cathode chamber comprises an electrolyte of a second composition. Membrane frame 274 is also a plurality of fluid conditioning rods 270 (sometimes referred to as flow restricting elements) that may be used to help control fluid transfer to channelized ion resistant element 206. It may also include. Membrane frame 274 defines the lower end of the cathode chamber and the upper end of the anode chamber. The components described are both located on the workpiece side of the electrochemical plating cell above the anode chamber and anode chamber membrane 202. All of them may appear to be part of the cathode chamber. However, it should be understood that certain embodiments of the crossflow inlet device do not use a separate anode chamber, whereby the membrane frame 274 is not essential.

Generally between the workpiece and the membrane frame 274, a cross flow ring gasket 238 and wafer cross flow, which may be attached to the channelized ion resistant plate 206, as well as the channeled ion resistant plate 206, respectively . Restriction ring 210 is located. More specifically, the crossflow ring gasket 238 may be positioned directly on top of the CIRP 206, and the wafer crossflow limit ring 210 may be positioned over the crossflow ring gasket 238 and channelized. It may be attached to the top surface of the ion resistant plate 206 to effectively sandwich the gasket 238. The various figures here show a crossflow confinement ring 210 arranged relative to the channelized ion resistant plate 206.

The most relevant structural feature of the present disclosure is a workpiece or wafer holder, as shown in FIG. 2. In certain embodiments, the workpiece holder may be a cup 254 that is used in a conventional design in the cone-and-cup clamshell type design, such as that implemented in Sabre ^® coated tool of the aforementioned Novellus Systems. 2 and 8A-8B show the relative orientation of the cup 254 relative to other elements of the apparatus, for example.

3A shows a close-up cross-sectional view of a crossflow inlet side in accordance with an embodiment disclosed herein. 3B shows a close-up cross-sectional view of the crossflow outlet side according to an embodiment herein. 4 shows a cross-sectional view of the plating apparatus showing both inlet and outlet sides, according to certain embodiments herein. During the plating process, the catholyte fills and occupies the area between the top of the membrane 202 on the membrane frame 274 and the membrane frame weir wall 282. This catholyte region can be subdivided into three subregions: (1) separate anode-chambers cation-membrane (for designs employing an anode chamber cation membrane) and below CIRP 206; 202, this element is also sometimes referred to as the lower manifold region 208, the cloth between the wafer and the top surface of the channelized ion resistant plate manifold regions 208, (2) CIRP 206 Manifold region 226, and (3) the upper cell region or “electrolyte restriction region” outside of clamshell / cup 254 and inside of cell weir wall 282 (which is a physical part of membrane 274). When the wafer is not immersed and the clamshell // cup 254 is not in the down position, the second region and the third region are combined into one region.

When it is installed on a workpiece holder, the area of the above-mentioned (2) between the top and the workpiece at the bottom of the channeled ions resistance plate 206, an electrolyte, and the "cross-flow manifold" referred to 226 do. In some embodiments, the electrolyte enters the cathode chamber through a single inlet port. In other embodiments, the catholyte enters the cathode chamber through one or more ports located anywhere in the plating cell. In some cases, there is a single inlet to the bath of the cell around the anode chamber except the anode chamber cell walls. This inlet connects with the central catholyte inlet manifold at the base of the cell and anode chamber. In certain disclosed embodiments, the main catholyte manifold chamber supplies a plurality of catholyte chamber inlet holes (eg, 12 catholyte chamber inlet holes). In various cases, these catholyte chamber inlet holes are divided into two groups: one group that supplies electrolyte to the crossflow inlet manifold 222 and one that supplies electrolyte to the CIRP manifold 208. 2 groups. 3B shows a cross sectional view of a single inlet hole feeding CIRP manifold 208 through channel 262. The dotted line represents the path of the fluid flow.

Separation of the electrolyte into two different flow paths or streams occurs at the base of the cell in the central electrolyte inlet manifold (not shown). The manifold is supplied by a single pipe connected to the base of the cell. From the main catholyte manifold, the flow of catholyte is separated into two streams: a cell that sources CIRP manifold region 208 and leads to ultimate supply of impingement catholyte flow through the various microchannels of CIRP. 6 of the 12 feeder holes located on one side of the feeder holes. The other six holes also feed from the central catholyte inlet manifold, but lead to a crossflow inlet manifold 222, which then crosses the distribution holes 246 of the crossflow showerhead 242. (Number may exceed 100). After leaving the crossflow showerhead holes 246, the flow direction of the catholyte changes from (a) normal to the wafer and (b) parallel to the wafer. The change in this flow is defined by the surface in the cross flow restriction ring 210 inlet cavity 250. Finally, upon entering the crossflow manifold region 226, two catholyte flows initially separated at the base of the cell in the central catholyte inlet manifold are recombined.

In the embodiments shown in the figures, a portion of the catholyte entering the cathode chamber is provided directly to the channelized ion resistant plate manifold 208, and some directly to the crossflow injection manifold 222. Is provided. At least in part, but not always, frequently, channelized ion resistant plate manifold 208, and then all of the catholyte delivered to the CIRP lower surface passes through the various microchannels of plate 206 and cross-flow manifold 226 is reached. The catholyte entering the crossflow manifold 226 through the channels in the channeled ion resistant plate 206 is substantially vertically directed jets (in some embodiments, the channels are angled, thus they are wafers). Not perfectly perpendicular to the surface of, for example, the angle of the jet may be up to about 45 degrees with respect to the wafer surface normal). A portion of the catholyte entering the crossflow injection manifold 222 is delivered directly to the crossflow manifold 226, where the catholyte enters as a horizontally oriented crossflow under the wafer. On the way to the crossflow manifold 226, the crossflow catholyte displaces the crossflow injection manifold 222 and the crossflow showerhead plate 242 (which is, for example, about 139 dispenses having a diameter of about 0.048 "). Through the shape holes 246) and then redirected from the vertically upward flow to a flow parallel to the wafer surface by the actions / geometry of the crossflow restriction rings 210 inlet cavity 250 ( redirected).

The absolute angles of the cross flow and jets need not be exactly horizontal or exactly vertical or even need not be oriented exactly 90 ° to each other. In general, however, crossflow of catholyte in crossflow manifold 226 generally follows the direction of the workpiece surface, and the direction of jets of catholyte emanating from the top surface of microchannelized ion resistant plate 206 It generally flows towards / perpendicular to the surface of the workpiece.

 As mentioned, the catholyte entering the cathode chamber comprises (i) catholyte flowing from the channeled ion resistant plate manifold 208 through the channels in the CIRP 206 and then to the crossflow manifold 226. (ii) into the crossflow injection manifold 222 and between the catholyte flowing through the holes 246 of the showerhead 242 and then into the crossflow manifold 226. Flow entering directly from crossflow injection manifold region 222 may enter through crossflow confinement ring inlet ports, sometimes referred to as crossflow side inlets 250, parallel to the wafer and one of the cells. You can also shoot from the side. Conversely, jets of fluid entering the crossflow manifold region 226 through the microchannels of the CIRP 206 enter from below the wafer and below the crossflow manifold 226, and the jet fluid passes through the crossflow manifold 226. ) And flows (directed) parallel to the wafer and toward the crossflow restriction ring outlet port 234, sometimes referred to as a crossflow outlet or outlet.

In some embodiments, the fluid entering the cathode chamber is directed into a plurality of channels 258 and 262 distributed around the perimeter (often the perimeter wall) of the cathode chamber portion of the electroplating cell chamber. In certain embodiments, there are twelve such channels included in the wall of the cathode chamber.

Channels in the cathode chamber walls may connect to corresponding “cross flow feed channels” of the membrane frame. Some of these feed channels 262 deliver catholyte directly to the channeled ion resistant plate manifold 208. As mentioned, the catholyte provided in this manifold subsequently passes through small vertically oriented channels of the channeled ion resistant plate 206 and enters the crossflow manifold 226 as jets of catholyte. do.

As mentioned, in the embodiment shown in the figures, catholyte feeds the CIRP manifold chamber 208 through six of the twelve catholyte feeder lines / tubes. These six main tubes or lines supplying the CIRP manifold 208 are below the exit cavity 234 of the crossflow restricting rings, where the fluid passes out of the crossflow manifold region 226 under the wafer, and It resides opposite all crossflow manifold components (cross flow injection manifold 222, showerhead 242, and restriction ring inlet cavity 250).

As shown in the various figures, some crossflow feed channels 258 (eg, six of twelve) in the membrane frame are directly led to crossflow injection manifold 222. These crossflow feed channels 258 begin at the base of the cell's anode chamber and then pass through the matching channels of the membrane frame 274 and then correspond on the bottom of the channelized ion resistant plate 206. Connection with cross-flow feed channels 258. For example, see FIG. 3A.

In certain embodiments, there are six separate feed channels 258 for direct delivery of catholyte to the crossflow injection manifold 222 and then to the crossflow manifold 226. In order to affect the crossflow in the crossflow manifold 226, these channels 258 exit into the crossflow manifold 226 in an azimuthally non-uniform manner. Specifically, they enter crossflow manifold 226 at a particular side or azimuth region of crossflow manifold 226. In the particular embodiment shown in FIG. 3A, fluid paths 258 for delivering catholyte directly to the crossflow injection manifold 222 are separated into four separate streams before reaching the crossflow injection manifold 222. Pass through the elements: (1) dedicated channels in the anode chamber wall of the cells, (2) dedicated channels in the membrane frame 274, (3) dedicated channels of the channelized ionically resistive element 206 (ie , 1-D channels used to deliver catholyte from the CIRP manifold 208 to the crossflow manifold 226), and finally (4) fluid paths within the wafer crossflow restriction ring 210.

As mentioned, portions of the flow paths that pass through the membrane frame 274 and feed the crossflow injection manifold 222 are referred to as crossflow feed channels 258 in the membrane frame. Portions of the flow paths that pass through the microchanneled ion resistant plate 206 and supply the CIRP manifold are crossflow feed channels 262 that feed the channelized ion resistant plate manifold 208, or the CURP manifold. It is referred to as fold supply channels 262. In other words, the term crossflow feed channel includes both catholyte supply channels 258 for supplying the crossflow injection manifold 222 and catholyte supply channels 262 for supplying the CIRP manifold 208. . One difference between these flows 258 and 262 has been mentioned above: The direction of flow through the CIRP 206 is first directed at the wafer and then the wafer due to the presence of the crossflow confinement ring 210 and the wafer. While turned parallel to, some of the crossflow exiting these crossflow injection manifolds 222 and exiting the crossflow restricting ring inlet ports 250 begin substantially parallel to the wafer. While not wishing to be aided by any particular model or theory, it is believed that this combination and mixing of collisions and parallel flows facilitates substantially improved flow penetration within recessed / embedded features and thereby improves mass transfer. . By creating a spatially uniform convection flow field below the wafer and rotating the wafer, each feature, and each die, exhibits approximately the same flow pattern during the rotation and plating process.

The flow path in the channelized ion resistant plate 206 that does not pass through the microchannels of the plate (instead enters the crossflow manifold 226 as flow parallel to the face of the wafer) is crossflow within the plate 206. a supply channel 258 because it passes starting from the vertically upward direction, and enters the cross-flow injection manifold 222 formed in the body and then channelized ions resistance plate 206. The cross flow injection manifold 222 is provided with various multiple flow distribution holes of the cross flow showerhead plate 242 from the various individual supply channels 258 (eg, from each of the six individual cross flow supply channels). 246 is an azimuth cavity, which may be a doug out channel in plate 206 that can dispense fluid to 246. This crossflow injection manifold 222 is located along the angular section of the circumferential or edge region of the channelized ion resistant plate 206. See FIGS. 3A and 4-6. In certain embodiments, crossflow injection manifold 222 forms a C-shaped structure over an angle of about 90 ° to 180 ° of the peripheral region of the plate. In certain embodiments, each scale of crossflow injection manifold 222 is between about 120 ° and about 170 °, and in more specific embodiments is between about 140 ° and 150 °. In these or other embodiments, each scale of the crossflow injection manifold 222 is at least about 90 °. In many embodiments, the showerhead 242 spans approximately the same angular scale as the crossflow injection manifold 222. In addition, the entire inlet structure 250, which in many cases includes one or more of an opening in the crossflow injection manifold 222, the showerhead 242, the showerhead holes 246, and the crossflow restriction ring. May span each of these same scales.

In certain embodiments, crossflow within the injection manifold 222 forms a continuous flow coupled cavity in the channelized ion resistant plate 206. In this case, all of the crossflow feed channels 258 (eg, all six) supplying the crossflow injection manifold exit to one continuous, connected crossflow injection manifold chamber. In other embodiments, the crossflow injection manifold 222 and / or the crossflow showerhead 242 are two or more angled discrete, as shown in FIG. 5 (which shows six separate segments). And divided into completely or partially separated segments. In certain embodiments, the number of angularly separated segments is between about 1-12, or between about 4-6. In certain embodiments, each of these angled discrete segments is fluidly coupled to a separate crossflow feed channel 258 disposed in the channelized ion resistant plate 206. Thus, for example, within the crossflow injection manifold 222 there may be six angled distinct separate subregions. In certain embodiments, each of these distinct subregions of crossflow injection manifold 222 has the same volume and / or the same angular scale.

In many cases, the cathode fluid cross flow having a cross-flow injection of the manifold 222 for exit out accomplished the catholyte outlet port and disconnect the many angles (holes) 246 Pass through the showerhead plate 242. See, for example, FIGS. 2, 3A-3B, and 6. In certain embodiments, the crossflow showerhead plate 242 is integrated into the channeled ion resistant plate 206 as shown in FIG. 6, for example. In some embodiments, the showerhead plate 242 is glued, bolted, or otherwise secured to the top of the crossflow injection manifold 222 of the channelized ion resistant plate 206. In certain embodiments, the top surface of the crossflow showerhead 242 is flush with, or slightly raised above, the flat or top surface of the channelized ion resistant plate 206. In this way, the catholyte flowing through the crossflow injection manifold 222 first moves vertically upwards through the showerhead holes 246 and then horizontally under the crossflow restriction ring 210. Moving into the fold 226, the catholyte may enter the crossflow manifold 226 in a direction substantially parallel to the top surface of the channeled ion resistant plate. In other embodiments, the showerhead 242 may be oriented such that the catholyte exiting the showerhead holes 246 is already moving in the wafer parallel direction.

In certain embodiments, crossflow showerhead 242 has 139 angled catholyte outlet holes 246 separated. More generally, any number of holes may be used that establish a fairly uniform cross flow in the cross flow manifold 226. In certain embodiments, there are between about 50 and about 300 such catholyte outlet holes 246 in the crossflow showerhead 242. In certain embodiments, there are between about 100 and about 200 such holes. In certain embodiments, there are between about 120 and about 160 such holes. In general, the size of individual ports or holes 246 may range from about 0.020 "to 0.10", more specifically about 0.03 "to 0.06" in diameter.

In certain embodiments, these holes 246 are disposed along the entire angular range of the crossflow showerhead 242 in an augularly uniform manner (ie, the space between the holes 246 is in the cell center and Determined by the angle of fixation between two adjacent holes). See, for example, FIGS. 3A and 7. In other embodiments, the holes 246 are distributed along each scale in an angularly non-uniform manner. In further embodiments, the isometric hole distribution is nevertheless linearly uniform (in the "x" direction). In other words, in this latter case, the hole distribution is the extent to which the holes are equally spaced apart apart when projecting over an axis perpendicular to the direction of cross flow (this axis is in the x direction). Each hole 246 is located at the same radial distance from the cell center and is spaced at equal distances in the "x" direction from adjacent holes. The net effect of having these isometric holes 246 is that the overall crossflow pattern is even more uniform. These two types of arrangements for crossflow showerhead holes 246 are further discussed in the experimental section below. See FIG. 22B and the associated discussion below.

In certain embodiments, the direction of the catholyte exiting the crossflow showerhead 242 is also controlled by the wafer crossflow restriction ring 210. In certain embodiments, this ring 210 extends over the entire perimeter of the channeled ion resistant plate 206. In certain embodiments, the cross-section of the crossflow restriction ring 210 has an L-shape as shown in FIGS. 3A and 4. In certain embodiments, wafer crossflow confinement ring 210 includes a series of flow direction designating elements, such as directional fins 266 in fluid communication with outlet holes 246 of crossflow showerhead 242. More specifically, the directional fins 266 define fluid passages that largely diverge below the upper surface of the wafer crossflow confinement ring 210 and between adjacent directional fins 266. In some cases, the purpose of the fins 266 is to transfer a flow exiting from the crossflow showerhead holes 246 from the radially inward direction into a “left to right” flow trajectory (left to crossflow). Is the inlet side 250 and the right side is the outlet side 234). This helps to build a substantially linear crossflow pattern. The catholyte exiting the holes 246 of the crossflow showerhead 242 is directed by the starburst pins 266 along the flow streamline caused by the orientation of the directional fins 266. In certain embodiments, all the directional fins 266 of the wafer crossflow restriction ring 210 are parallel to each other. This parallel arrangement helps to establish a uniform crossflow direction within the crossflow manifold 226. In various embodiments, the directional fins 226 of the wafer crossflow restriction ring 210 are disposed along both the inlet 250 and outlet 234 sides of the crossflow manifold 226. This is illustrated, for example, in the top view of FIG. 7.

As shown, the catholyte flowing in the crossflow manifold 226 is discharged from the inlet region 250 of the ring 210 from the inlet region 250 of the wafer crossflow restriction ring 210, as shown in FIGS. 3B and 4. 234). At the outlet side 234, in certain embodiments, there are a plurality of directional pins 266 that may align with and parallel to the directional pins 266 on the inlet side. The crossflow passes through the channels created by the directional pins 266 on the outlet side 234, and then ultimately and directly out of the crossflow manifold 226. The flow then passes into other regions of the cathode chamber, generally radially outward and across, of the wafer holder 254 and the crossflow restriction ring 210, before the fluid flows over the weir for collection and recirculation. Collected and temporarily retained by the upper weir wall 282 of the membrane frame. Accordingly, the drawings (eg, FIGS. 3A, 3B and 4) should only be understood to show a partial path of the entire circuit of catholyte entering and exiting the crossflow manifold. In the embodiment shown in FIGS. 3B and 4, for example, the fluid exiting from the crossflow manifold 226 passes through small holes similar to the feed channels 258 on the inlet side or again through similar channels. It should be noted that instead of turning, it passes outwards generally parallel to the wafer direction since it accumulates in the above-described accumulation region.

6 shows a cross flow manifold 226 showing an embedded cross flow injection manifold 222 in a channelized ion resistant plate 206, along with the showerhead 242 and 139 outlet holes 246. The top view is shown. All six fluid adjustment rods 270 for the crossflow injection manifold flow are also shown. Cross flow restriction ring 210 is not installed in this figure, but an outline of cross flow restriction ring sealing gasket 238 is shown that seals between cross flow restriction ring 210 and the top surface of CIRP 206. Other elements shown in FIG. 6 include crossflow restricting ring fasteners 218, membrane frame 274, and screw holes 278 on the anode side of CIRP 206 (eg, catholyte shielding inserts). May be used for the purpose of

In some embodiments, the geometry of the crossflow restriction ring outlet 234 may be tuned to further optimize the crossflow pattern. For example, the case where the crossflow pattern branches to the edge of the restricting ring 210 may be corrected by reducing the open area in the outer regions of the crossflow restricting ring outlet 234. In certain embodiments, outlet manifold 234 may include separate sections or ports, more similar crossflow injection manifold 222. In certain embodiments, the number of outlet sections is between about 1-12, or between about 4-6. The ports are separated at azimuth and occupy different (mainly adjacent) locations along outlet manifold 234. Relative flow rates through each of the ports may in some cases be independently controlled. This control may be achieved, for example, by using control rods 270 similar to the control rods described with respect to the inlet flow. In other embodiments, the flow through the different sections of the outlet can be controlled by the geometry of the outlet manifold. For example, an outlet manifold with more open area near the center and less open area near each side edge results in a solution flow pattern where more flow exits near the center of the outlet and the edge of the outlet Less flow exits near the field. Other methods of controlling relative flow rates through ports in outlet manifold 234 (eg, pumps, etc.) may also be used.

As described above, the bulk catholyte entering the catholyte chamber is channeled ion resistant plate manifold through the crossflow injection manifold 222 and a plurality of channels 258 and 262, for example 12 discrete channels. Are separately directed into fold 208. In certain embodiments, flows through these individual channels 258 and 262 are controlled independently from each other by a suitable mechanism. In some embodiments, this mechanism includes separate pumps for delivering fluid to separate channels. In other embodiments, a single pump is used to supply the main catholyte manifold, and various adjustable flow restriction elements are provided between the various channels 258 and 262 and the crossflow injection manifold 222 and the CIRP manifold ( 208 may be provided to one or more channels providing a flow path provided to regulate relative flows between regions and / or along the angular periphery of the cell. In the various embodiments shown in the figures, one or more fluid adjustment rods 270 (sometimes also referred to as flow control elements) are disposed in channels provided with independent control. In the embodiments shown, the fluid conditioning rod 270 provides an annular space where the catholyte is constrained during its flow towards the crossflow injection manifold 222 or the channelized ion resistant plate manifold 208. do. In the fully retracted state, the fluid regulation rod 270 essentially does not provide resistance to flow. In the fully engaged state, the fluid regulation rod 270 provides maximum resistance to flow and, in some implementations, stops all flow through the channel. In intermediate states or locations, rod 270 allows constraints of intermediate levels of flow as the fluid flows through a limited annular space between the inner diameter of the channel and the outer diameter of the fluid conditioning rod.

In some embodiments, adjustment of the fluid adjustment rods 270 is such that the operator or controller of the electroplating cell flows into either the crossflow injection manifold 222 or the channelized ion resistant plate manifold 208. Allow to help. In certain embodiments, independent adjustment of fluid regulation rods 270 in channels 258 delivering catholyte directly to crossflow injection manifold 222 allows an operator or controller to perform crossflow manifold 226. Control the azimuth component of the fluid flow to The effects of these adjustments are discussed further in the experimental section below.

8A and 8B show cross-sectional views of crossflow injection manifold 222 and corresponding crossflow inlet 250 for plating cup 254. The position of the crossflow inlet 250 is defined, at least in part, by the position of the crossflow restriction ring 210. Specifically, the inlet 250 may be considered to start where the crossflow restriction ring 210 ends. In the case of the initial design, shown in FIG. 8A, the limit ring 210 end point (and the inlet 250 start point) is below the edge of the wafer, while in the revised design, shown in FIG. 8B, the end / start point is the plating cup. It is down and further radially outward from the wafer edge compared to the initial design. In addition, the crossflow injection manifold 222 in the initial design may be used in a crossflow ring cavity that potentially formed some unwanted turbulence near that point of the fluid entry into the crossflow manifold region 226. Have a step (generally the arrow to the left starts rising upward). As discussed in the experimental section below, these convictions were confirmed for wafer data as well as modeling results. Thus, some distance (e.g., for solution flow) is minimized to minimize expansion of fluid trajectories near the wafer edge and to make the plating solution more uniform before transitioning from the crossflow injection manifold region 222 and flowing across the wafer surface. It is advantageous to allow entry into the increased cross sectional area of the crossflow manifold region 226 by providing about 10 to 15 mm).

The disclosed apparatus may be configured to perform the methods described herein. Suitable apparatus includes hardware as described and shown herein and one or more controllers with instructions for controlling process operations in accordance with the present invention. This apparatus includes, inter alia, positioning of the wafers in the cup 254 and cone, positioning of the wafers relative to the channelized ion resistant plates 206, rotation of the wafers, delivery of catholyte to the crossflow manifold 226, CIRP Delivery of catholyte to manifold 208, delivery of catholyte to crossflow injection manifold 222, resistance / position of fluid conditioning rods 270, current to anode and wafer and any other electrodes One or more controllers to control the delivery of, mixing of electrolyte components, timing of electrolyte delivery, inlet pressure, plating cell pressure, plating cell temperature, wafer temperature, and other parameters of the particulate process performed by the process tool. .

The system controller will typically include one or more processors and one or more memory devices configured to execute instructions that cause the apparatus to perform a method in accordance with the present invention. The processor may include a central processing unit (CPU) or computer, analog and / or digital input / output connections, stepper motor controller boards, and other equivalent components. A machine-readable medium may be coupled to the system controller that includes instructions for controlling process operations in accordance with the present invention. Instructions for implementing suitable control operations are executed on the processor. These instructions may be stored on memory devices associated with the controller or may be provided over a network. In certain embodiments, the system controller executes system control software.

System control software may be configured in any suitable manner. For example, various process tool component subroutines or control objects may be recorded to control the operation of process tool components needed to perform the various process tool processes. The system control software may be coded in any suitable computer readable programming language.

In certain embodiments, system control software includes input / output control (IOC) sequencing instructions for controlling the various parameters described above. For example, each phase of the electroplating process may include one or more instructions for execution by the system controller. Instructions for setting process conditions for an immersion process phase may be included in a corresponding immersion recipe phase. In some embodiments, the electroplating recipe phases may be arranged sequentially so that all instructions for the electroplating process phase are executed concurrently with the process phase.

Other computer software and / or programs may be employed in some embodiments. Examples of programs or sections of programs for this purpose include a substrate positioning program, an electrolyte composition control program, a pressure control program, a heater control program, and a potential / current power supply control program.

In some cases, the controllers control one or more of the following functions: wafer immersion (translation, tilt, rotation), fluid transfer between tanks, and the like. Wafer immersion may be controlled, for example, by instructing the wafer lift assembly, wafer tilt assembly and wafer rotation assembly to move as desired. The controller may control fluid transfer between tanks, for example, by instructing certain valves to open or close, and instructing certain pumps to turn on and off. The controllers may be based on sensor output (eg, when current, current density, potential, pressure, etc. reach a predetermined threshold), timing of operation (eg, opening valves at a given time of the process), or These aspects may be controlled based on received commands from the user.

The apparatus / process described above may be used with lithographic patterning tools or processes, for example, for the manufacture or fabrication of semiconductor devices, displays, LEDs, photovoltaic panels, and the like. Typically, but not necessarily, these tools / processes will be used or processed together in a common manufacturing plant. Lithographic patterning of a film typically includes some or all of the following operations, each of which is enabled by a number of possible tools: (1) a workpiece, i.e., a substrate, using a spin-on or spray-on tool Application of photoresist onto; (2) curing the photoresist using a hot plate or furnace or UV curing tool; (3) exposure of the photoresist to visible or ultraviolet (UV) light or x-ray light using a tool such as a wafer stepper; (4) developing the resist to selectively remove the resist and patterning it using a tool such as a wet bench; (5) transfer the resist pattern to the base film or workpiece by using a dry or plasma assisted etching tool; And (6) removing the resist using a tool such as RF or microwave plasma resist stripper.

Channelized  Ion resistance Element Features

Electrical function

In certain embodiments, the channelized ion resistant element 206 approximates a nearly constant and uniform current source near the substrate (cathode), thereby in some contexts may be referred to as a high resistance virtual anode (HRVA). have. Normally, the CIRP 206 is placed closely to the wafer. In contrast, an anode that is equally close to the substrate will have a significantly less tendency to supply a nearly constant current to the wafer, but will simply support a constant potential plane on the anode metal surface, so that the end point (eg, on the wafer) from the anode plane The current is greatest where the net resistance to the peripheral contacts) is smaller. So while the channeled ion resistant element 206 was referred to as a high resistance virtual anode (HRVA), this does not mean that the two are electrochemically interchangeable. Under optimal operating conditions, the CIRP 206 can be more closely approximated and maybe better described as a virtual uniform current source, with a nearly constant current sourced from across the upper plane of the CIRP 206. will be. HRVA can be clearly seen as a "virtual current source", ie it can be considered a "virtual anode" because it is the plane in which the current is emitting and therefore can be considered the location or source from which the anode current is emitted, Relatively high-ion of the CIRP 206 (relative to electrolyte), which is more desirable, compared to having metallic anodes across its face and located at the same physical location, and generally leading to prevailing wafer uniformity. -Resistance. The resistance of the plate to the ion current flow is determined by the specific resistance of the electrolyte contained in the various channels of the plate 206 (often having the same or nearly similar resistance of the catholyte, but not always), increased plate thickness, and reduction Increases with increasing porosity (e.g., fewer holes of the same diameter, or the same number of holes with the smaller diameter, etc., etc.).

rescue

The CIRP 206 includes micro-sized (typically less than 0.04 ") through-holes that are spatially and ionically isolated from one another and in many but not all embodiments, do not form interconnect channels in the body of the CIRP. Through holes are often referred to as non-communication through holes, which typically extend in one dimension, often (but not necessarily) perpendicular to the plated surface of the wafer (in some embodiments, the non-communication holes are in front of the CIRP front). Angled with respect to the wafer, which is generally parallel to each other.) Often, the through holes are parallel to each other, often the holes are arranged in a rectangular array, at other times, the layout is an offset spiral pattern. Is completely different from where channels extend in three dimensions and form an interconnected pore structure, because This is because the through holes reconstruct both the ion current flow and the fluid flow parallel to the surface of the present specification and straighten the path of both the current and the fluid flow towards the wafer surface. Such porous plates, with interconnected networks, may be used in place of 1-D channeled elements (CIRP), where the distance from the top surface of the plate to the wafer is small (eg, about the size of the wafer radius). A gap of 1/10, eg less than about 5 mm), the divergence of both the current flow and the fluid flow is locally aligned with the restricting, transmitting and CIRP channels.

One exemplary CIRP 206 is a disk made of a solid, non-porous dielectric that is ionic and electrically resistant. The material is also chemically stable in the plating solution used. In some cases, CIRP 206 is a ceramic material (eg, aluminum oxide, second tin oxide, titanium oxide, or mixtures of metal oxides) having non-communication through holes between about 6,000 and 12,000, or Plastic materials (eg, polyethylene, polypropylene, polyvinylidene difluoride (PVDF), polytetrafluoroethylene, polysulfone, polyvinyl chloride (PVC), polycarbonate, etc.). The disk 206, in many embodiments, occupies substantially the same space as the wafer (eg, the CIRP disk 206 has a diameter of about 300 mm when used with a 300 mm wafer) and closely to the wafer. For example, it resides just below the wafer in a wafer-facing-down electroplating apparatus. Preferably, the plated surface of the wafer resides within about 10 mm, more preferably within about 5 mm of the nearest CIRP surface. Because of this, the top surface of the channelized ion resistant plate 206 may be flat or substantially flat. Often, the surfaces of both the top and bottom of the channeled ion resistant plate 206 are flat or substantially flat.

Another feature of CIRP 206 is its relationship with the diameter or major dimension of the through holes and the distance between CIRP 206 and the substrate. In certain embodiments, the diameter of each through hole (or the diameter of most of the through holes or the average diameter of the through holes) is less than or equal to the distance from the plated wafer surface to the nearest surface of the CIRP 206. Thus, in these embodiments, the diameter or major dimension of the through holes should not exceed about 5 mm when the CIRP 206 is disposed within about 5 mm of the plated wafer surface.

As above, the total ionic and flow resistance of the plate 206 depends on both the thickness of the plate and the total porosity (fraction of the area available for flow through the plate) and the size / dimensions of the holes. Plates of lower porosities will have higher impact flow rates and ion resistances. Comparing plates of the same porosity, having smaller diameter 1-D holes (and thus a larger number of 1-D holes) will have more micro-uniform distribution on the wafer because there are more individual current sources. Which will act more as point sources that can spread across the same gap, and will also have a higher total pressure drop (high viscous flow resistance).

However, in certain cases, ion resistant plate 206 is porous as mentioned above. The pores in plate 206 may not form independent 1-D channels, but may instead form a mesh of through holes that may or may not be interconnected. As used herein, it is to be understood that the terms channeled ion resistant plate and channelized ion resistant element (CIRP) are intended to include this embodiment unless otherwise indicated.

Through-holes  Vertical through Flow

The presence of an ion resistant but ion permeable element (CIRP) 206 close to the wafer substantially reduces the termination effect, such as when the resistance of the current in the wafer seed layer is greater than in the catholyte of the cell. Improves radial plating uniformity in certain applications where it is operational and / or relevant. CIRP 206 also acts as a flow diffusion manifold plate to simultaneously provide the ability to have a substantially space uniform collision flow of electrolyte directed upwards at the wafer surface. Importantly, if the same element 206 is placed away from the wafer, the uniformity and flow improvements of ion current are significantly less pronounced or absent.

In addition, since non-communication through holes do not allow lateral movement of ion current or fluid motion in the CIRP, center-to-edge current and flow movements are blocked within the CIRP 206, further improving radial plating uniformity. Cause. In the embodiment shown in FIG. 9, the CIRP 206 serves as microchannels and has a rectangular array on the face of the plate (eg, over a substantially circular area having a diameter of about 300 mm when plating a 300 mm wafer). Perforated plate having approximately 9000 uniformly spaced one-dimensional holes with an effective average porosity of about 4.5% and an individual microchannel hole size of about 0.67 mm (0.026 inch) in diameter. Also shown in FIG. 9 is flow distribution adjustment rods 270, which are upwards through the CIRP manifold 208 and through the holes in the CIRP 206, or cross flow injection manifold 222 and cross flow. It may be used to preferentially direct the flow to enter the crossflow manifold 226 through the showerhead 242. The crossflow restriction ring 210 is fitted on top of the CIRP, which is supported by the membrane frame 274.

In some embodiments, CIRP plate 206 can be used to preferentially or exclusively control intra-cell electrolyte flow resistance, flow, thereby referred to as a flow shaping element , sometimes a turboplate . This designation may be used whether or not the plate 206 tailors radial deposition uniformity, for example by balancing the termination effect and / or by modulating the electric field or kinetic resistance of the plating additive coupled with the flow in the cell. It may be. Thus, for example, in TSV and WLP electroplating, where the seed metal thickness is generally large (eg> 1000 mm thick) and the metal is being deposited at very high rates, the uniform distribution of electrolyte flow is very important, Radial nonuniformity control resulting from the ohmic voltage drop in the wafer seed may be less essential to compensating (because at least partially central-to-edge nonuniformity is less severe where thicker seed layers are used). . The CIRP plate 206 may thus be referred to both as an ionically resistive ionically permeable element and as a plate shaping element, alternating the flow of ion currents or alternating convection flows of material, or both. By performing the deposition-rate correction function.

Wafer and Channelized  Distance between plates

In certain embodiments, wafer holder 254 and associated positioning mechanism maintain a rotating wafer very close to the parallel top surface of the channelized ion resistant element 206. During plating, the substrate is generally positioned such that it is parallel or substantially parallel to the ion resistant element (eg, within about 10 °). The substrate may have certain features on top, but only generally a planar shaped substrate is considered in determining whether the substrate and the ion resistive element are substantially parallel.

In typical cases, the separation distance is about 1 to 10 millimeters, or about 2 to 8 millimeters. This small plate-to-wafer distance can create a plating pattern on the wafer, particularly associated with the proximity "imaging" of individual holes in the pattern, near the center of the wafer rotation. In this situation, the pattern of plating rings (thickness or plated texture) may occur near the wafer center. To avoid this phenomenon, in some embodiments, the individual holes in CIRP 206 (especially at and near the wafer center) are particularly small in size (eg about one fifth of the plate relative to the wafer gap). It can be configured to have less than). When coupled with wafer rotation, the small pore size allows time averaging of the flow velocity of the impinging fluid occurring as a jet from the plate 206, and allows for small scale nonuniformities (e.g., nonuniformity on the order of micrometers). Sexes) or reduce. Notwithstanding the above precautions, and depending on the properties of the plating bath used (eg, deposited particulate metal, conductivity, and bath additives employed), in some cases, the deposition of the individual hole patterns used is dependent upon. Corresponding, proximity-imaging-patterns of varying thickness (eg, in the shape of a "bulls eye" around the wafer center) and micro-non-uniform patterns (e.g. formation of center rings) as time-averaged exposures It may be easy to occur. This can occur if the finite hole pattern is non-uniform and produces a collision flow pattern that affects deposition. In this case, the introduction of the lateral flow across the wafer center and / or the modification of the regular pattern of holes right in and / or near the center are all largely to remove any sign of micro-non-uniformity found there differently. Confirmed.

Channelized  Porosity of plate

In various embodiments, the channelized ion resistant plate 206 has a sufficiently low porosity and pore size to provide viscous flow resistance back pressure and high vertical impingement flow rates at normal operating volume flow rates. In some cases, about 1-10% of channelized ion resistant plate 206 is an open area that allows fluid to reach the wafer surface. In certain embodiments, about 2-5% of plate 206 is an open area. In certain instances, the open area of the plate 206 is about 3.2% and the effective total open cross section is about 23 cm ² .

Channelized  Plate hole size

The porosity of the channeled ion resistant plate 206 can be implemented in a number of different ways. In various embodiments, it is implemented with multiple vertical holes of small diameter. In some cases, plate 206 is not made up of individual "drilled" holes, but is produced by a sintered plate of continuously porous material. Examples of such sintered plates are described in US Pat. No. 6,964,792 (Agent No. NOVLP023), which is hereby incorporated by reference in its entirety. In some embodiments, the drilled non-communicating holes have a diameter of about 0.01 to 0.05 inches. In some cases, the holes have a diameter of about 0.02 to 0.03 inches. As described above, in various embodiments, the holes have a diameter that is at most about 0.2 times the gap distance between the channeled ion resistant plate 206 and the wafer. The holes are generally circular in cross section but need not be circular. Also, to facilitate configuration, all holes in plate 206 may have the same diameter. However, this need not be, and both the individual size and the local density of the holes may change over the plate surface as specific requirements are indicated.

By way of example, the solid plate 206 has been found to be useful (eg, 9465 holes of 0.026 inch provided with a number of, for example, at least about 1000 or at least about 3000 or at least about 5000 or at least about 6000 small holes. ), A suitable ceramic or plastic material (generally dielectric insulating and mechanically robust material). As mentioned above, some designs have about 9000 holes. The porosity of plate 206 is typically less than about 5 percent so that the total flow rate required to produce a high impact velocity is not very large. Using smaller holes creates a greater pressure drop across the plate compared to larger holes, helping to create a more uniform upward velocity through the plate.

In general, the distribution of holes for the channeled ion resistant plate 206 is uniform and non-random. However, in some cases, the density of the holes may vary in particular in the radial direction. In certain embodiments, there are holes of greater density and / or diameter in the area of the plate that directs the flow towards the center of the rotating substrate, as described more fully below. Also, in some embodiments, holes directing the electrolyte at or near the center of the rotating wafer may induce a non-orthogonal flow with respect to the wafer surface. In addition, hole patterns in this area may have a random or partial random distribution of non-uniform plating “rings” to handle possible interactions between a limited number of holes and wafer rotation. In some embodiments, the hole density proximate the open segment of the flow diverter or confinement ring 210 is channeled ion resister, further away from the open segment of the attached flow diverter or confinement ring 210. Lower than on areas of plate 206.

The configurations and / or approaches described herein are illustrative in nature, and these specific embodiments or examples should not be considered in a limiting sense because various modifications are possible. Certain routines or methods described herein may represent one or more of any number of processing strategies. As such, the various actions shown may be performed in the sequence shown, in other sequences, in parallel, or in some cases omitted. Likewise, the order of the processes described above may be changed.

The subject matter of this disclosure is not only all novel and non-obvious combinations and subcombinations of the various processes, systems and configurations, but also other features, functions, acts, and / or features disclosed herein. Any and all equivalents thereof.

Examples and Experiments

Several observations are provided in this section which suggest that improved crossflow through crossflow manifold 226 is desirable. Throughout this section, two basic plating cell designs are tested. Both designs include a confinement ring 210, sometimes also referred to as a flow diverter, that defines a crossflow manifold 226 on top of the channeled ion resistant plate 206. The first design, sometimes also referred to as the control design and / or the TC1 design, does not include a side inlet to this crossflow manifold 226. Instead, in a control design, all flow to the crossflow manifold 226 moves up through the holes in the CIRP 206 before originating under the CIRP 206 and impinging on the wafer and flowing across the face of the substrate. do. The second design, sometimes referred to as the current design and / or TC2 design, flows directly into the crossflow manifold 226 without passing through channels or holes in the crossflow injection manifold 222 and the CIRP 206. (However, in some cases, the flow delivered to the crossflow injection manifold passes through dedicated channels near the periphery of the CIRP 206, and those channels pass through the CIRP manifold 208. ) Are distinct / separated from the channels used to direct the fluid from cross flow manifold 226).

Thickness distribution nonuniform

When using previous plating cell designs lacking a crossflow injection manifold, vertical fluid injection in certain areas of the wafer (eg, an area near the center of the wafer (but typically offset from the wafer center) Flow conditions often occur that allow the velocity to prevail over the horizontal crossflow velocity. In such cases, the individual jets are amplified and result in an uneven thickness distribution. FIG. 10 shows a graph of film thickness versus position on a wafer for a copper plated substrate in a control plating cell lacking a lateral inlet to a crossflow manifold. As shown in FIG. 10, the film is thicker towards the edge of the substrate and thinner towards the center of the substrate. This radial thickness difference is not optimal.

11 shows two substrates, one substrate plated in a control design plating cell (shown with round dots and designated herein as TC1), and a crossflow injection manifold 222 (shown as triangles and designated herein as TC2). Shows a graph of the thickness versus location of the film on the wafer for one substrate plated in the current design plating cell. Data was generated by blanket deposition of copper on the wafer with plating chemistries using levelers. 11 shows that wafer center nonuniformity (or ringing) is observed in the control device, but is dramatically improved when using current devices (with side inlets into the crossflow manifold).

Feature Geometry Variation

Fundamental crossflow imbalance between azimuth opposing positions on the plated wafer in the control device having outlet 234 at one azimuth location in crossflow manifold 226 but no inlet 250 at opposite azimuth locations Imbalance results in convection in non-uniform features. The end result is a bump shape that exhibits some thickness nonuniformity (eg, slope in one direction).

12 shows microbumps plated in the control design plating cell (top panels designated TC1) and microbumps plated in the current design plating cell (bottom panels designated as TC2) according to various embodiments herein. It illustrates the shape within the features of the various microbumps located at different locations on the substrate. For each graph of FIG. 12, the x axis corresponds to the position on the wafer as indicated by the large arrows at the top of the figure, and the y axis corresponds to the height of a given microbump at that position. Thus, each graph shows a schematic shape of the microbumps plated at a specific location on the substrate.

For the context, the "bottom" area of the wafer is where the notch on the wafer is present. The "top" of the wafer is the side of the wafer opposite to the side where the notch occurs. Four small arrows in the upper panels of FIG. 12 correspond to the slope of the plated feature (ie, the points of the arrow point toward the higher side of the feature). Ideally, these arrows are horizontal, which means that there is no slope to the feature. Due to the rotation of the substrate during plating, there is a center-to-edge component of the electrolyte flow pattern. Small arrows in the top panels of FIG. 12 point in the opposite direction to this flow.

In generating the data shown in FIG. 12, copper bumps were deposited on 20 × 20 μm features in the photoresist. For the control design, the crossflow reached its maximum velocity, and convective drive mass transfer prevailed at the outlet 234 of the crossflow manifold 226. As a result, the inner "upstream" sides of the bumps experienced greater deposition rates, as shown in the data profiles shown in the top panels of FIG. 12. As shown in the bottom panels of FIG. 12, a noticeable improvement is observed in the bump profiles created using forced crossflow in accordance with the embodiments described herein. Overall, FIG. 12 shows that there was a very small feature slope for the current design compared to the control design.

Silver composition heterogeneity

Control devices without side inlets into the crossflow manifold result in significantly less crossflow over certain areas of the wafer surface compared to other areas of the wafer surface. When using such a device for plating an alloy, the composition of the alloy may not be uniform across the face of the wafer. For example, when using such an apparatus for plating tin-silver solder bumps, the concentration of silver may be lower near the center of the wafer and higher near the edges of the wafer. This nonuniform alloy composition emphasizes the nonuniform crossflow pattern of the plating solution. FIG. 13 shows the silver composition vs. on-wafer position for tin-silver bumps plated in a control design plating cell. The x axis represents the position of the bump on the wafer, while the y axis represents the percentage of silver in the bump. In particular, the percentage of silver is lower for bumps plated in the center / near center than for bumps plated closer to the edge of the wafer. For SnAg solder plating, silver is a diffusion limited species. The uniform composition of the SnAg plated material is a parameter in maintaining good solder welds. The composition uniformity of the SnAg plated material may be improved by enhancing the diffusion of species in the system, for example by introducing crossflow from the side inlet 250 in accordance with embodiments herein.

14A-B through 18A-B show current plating cells 14b, 15b, 16b, 17b and 18b having side inlets to the control plating cells 14a, 15a, 16a, 17a and 18a versus the crossflow manifold. Compare flow patterns achieved using Results were generated using numerical models of crossflow manifolds.

14A shows a plan view of a portion of a control design plating apparatus. In particular, the figure shows a CIRP 206 with a flow diverter 210. 14B illustrates a current design plating apparatus, in particular showing the CIRP 206, the flow diverter 210, and the crossflow injection manifold 222 / crossflow manifold inlet 250 / crossflow showerhead 242. A top view of a portion of the is shown. The direction of the flow in FIGS. 14A-B is generally directed from the left to the right, toward the outlet 234 on the flow diverter 210. The designs shown in FIGS. 14A-B correspond to the designs modeled in FIGS. 15A-B through 17A-B.

15A shows a flow through the crossflow manifold 226 for the control design. In this case, all flows in the crossflow manifold 226 are from below the CIRP 206. The magnitude of the flow at a particular point is indicated by the size of the arrows. In the control design of FIG. 15A, the size of the flow increases substantially throughout the crossflow manifold 226 as additional fluid passes through the CIRP 206, impinges on the wafer, and joins the crossflow. However, in the current design of FIG. 15B, this increase in flow is much less substantial. The increase is not so large because a certain amount of fluid is delivered directly to the crossflow manifold 226 through the crossflow injection manifold 222 and associated hardware.

FIG. 16A shows the flow rate across the face of the wafer in the control design shown in FIG. 14A. The flow is much faster (as shown by the darker shades) near the outlet 234 of the flow diverter and much slower (as shown by the brighter shades) on the opposite side of the outlet. In contrast, FIG. 16B shows that the flow rate is much more uniform for the current design shown in FIG. 14B.

FIG. 17A shows the horizontal velocity across the surface of the plated substrate in the control design device shown in FIG. 14A. In particular, the flow velocity starts at zero (at the position opposite the flow diverter outlet) and increases until it reaches the outlet 234. Unfortunately, the average flow at the center of the wafer is relatively low in control implementations. As a result, the injections of catholyte released from the channels of the channelized ion resistant plate 206 are hydrodynamic predominant in the central region. Since the rotation of the wafer creates an azimuthally averaged crossflow experience, the problem is not addressed towards the edge regions of the workpiece.

17B shows the horizontal velocity across the face of the plated substrate in the current design shown in FIG. 14B. In this case, the horizontal velocity starts at inlet 250 at a non-zero value due to fluid injected from crossflow injection manifold 222, through side inlet 250, to crossflow manifold 226. In addition, the flow rate at the center of the wafer is increased in the current design relative to the control design, thereby reducing or eliminating areas of low crossflow near the center of the wafer where otherwise impingement jets may prevail. Thus, the side inlets will substantially improve the uniformity of the crossflow rates along the inlet-to-outlet direction and result in a more uniform plating thickness.

18A shows modeling results showing the crossflow velocity (z-velocity) for a particular control design case in which a 12 L / min total flow is delivered to the crossflow manifold 226 (all fluid is through CIRP holes). Entering the crossflow manifold). The crossflow velocity is very nonuniform, as indicated by the many shades of gray / black provided in the figure. The flow rate is lowest near the center of the wafer and towards the wafer side opposite the inlet. Flow is highest near outlet 234. 18B shows similar modeling results showing the crossflow velocity for the particular case using the current design with side inlets 250, where 3 L / min plating fluid is delivered through the holes of CIRP 206. 9 L / min plating fluid is delivered directly through the crossflow injection manifold / side inlet 222/250. 18B illustrates a very significant improvement in crossflow velocity uniformity that may be achieved using the side inlet 250 for the crossflow manifold 226. Although the flow rate is slightly higher near the wafer edges than near the wafer center, this difference is small compared to the differences shown in the control design in FIG. 18A.

Numerous conceptual and practical tests have been performed using hardware implementing the implementations described herein.

19A-B show results of static imprint tests comparing control (no side inlet) and current (side inlet 250) implementations. Each test consisted of a 5 minute etching of a 1000 microsecond copper seed wafer while the plating cup 254 was placed in the plating position without rotation. For the control design, as shown in FIG. 19A, the etch pattern shows a very distinct cross hatched pattern that represents the region of the injected flow (no cross flow). As mentioned above, these regions where the injected flow is superior to cross flow are undesirable in terms of plating uniformity. These regions may sometimes be referred to as "dead spots". The static imprint pattern for the current embodiment did not represent any such pattern as shown in FIG. 19B. Current embodiments with lateral inlets 250 also result in areas near the inlets 250 where etching is higher (indicated by the darker areas towards the left side of the substrate in FIG. 19B) correlated to regions of turbulence. .

As described above, in some embodiments, the adjustment of the fluid adjustment rods 270 is such that the operator or controller of the electroplating cell flows into the crossflow injection manifold 222 or into the channelized ion resistant plate 208. Allow to promote it.

FIG. 20 shows several fluid adjustment rods in a cell with twelve feeder channels, ie control rods 270 at six for the crossflow injection manifold 258 and six for the CIRP manifold 262, respectively. 270 are used to control the catholyte flow to CIRP 206 and crossflow manifold 226. Each curve 48, 47, etc. in the figure refers to the diameter of the fluid adjustment rod 270 in mm. The 48 mm rod was essentially a fully limiting rod, whereas the 32 mm rod (in addition to the fully open state indicated as 00) was the minimum limiting rod used in this study. In addition, each curve was generated by installing six rods 270 of the same size in crossflow injection manifold feeders 258 or CIRP manifold feeders 262. Also, when fluid adjustment rods 270 are installed on crossflow injection manifold feeders 258, no fluid adjustment rods are installed on CIRP manifold feeders 262 and vice versa. The data indicate that by using different sized control rods 270 in which different pressures and flow rates are measured, the flows can be changed from side to side and across the various 12 feeder channels 258, 262.

21A-B provide modeling data indicative of the impact flow velocity (y-velocity) at different points near the wafer for the two confinement ring 210 setups shown in FIGS. 8A-B, respectively. The velocity is modeled in a plane 1 mm below the wafer plane. With reference to FIGS. 21A-B, the cross flow is in the -z direction (top to bottom as shown). However, the velocity modeled in this figure is the y- velocity, which is the flow velocity in a direction perpendicular to the CIRP 206 and points towards the wafer. The flow moving upwards towards the wafer has a positive y-speed. For the preliminary current design shown in FIG. 8A, where the inlet 250 to the crossflow manifold 226 ends below the wafer, the flow exiting the inlet 250 is initially relative as shown in FIG. 21A. Nonuniform In contrast, for the revised current design shown in FIG. 8B, the inlet 250 to the crossflow manifold 226 ends more radially outside (under the cup 254 instead of below the wafer), The flow radiating from 250 is substantially more uniform. The location where the inlet 250 to the crossflow manifold 226 terminates corresponds to the location where the crossflow restricting ring 210 ends in many cases. FIG. 21C shows a modeling path showing the flow path near the edge of the substrate in the case of the initial design shown in FIG. 8A and modeled in FIG. 21A. This flow, bent upwards and backwards near the inlet, corresponds to the uniformity shown near the inlet in FIG. 21A.

22A-B illustrate the effect of the angular distribution of crossflow showerhead holes 246 on crossflow uniformity. In both cases, the flow direction fins 266 were positioned in an angularly uniform manner, the cross flow was in the z direction (from bottom to top of the page) and the velocity was a plane below the wafer plane 0.2 mm. Modeled at Also, in each case, the flow is 12 L / min total flow, 9 L / min evenly distributed over the 139 crossflow showerhead holes 246 and 3 L / min delivered to the CIRP manifold 208. Was modeled as:

22A shows the modeled crossflow velocity when the separations between adjacent crossflow showerhead holes 246 are angularly uniform. In this case, the length of the arc between each pair of adjacent showerhead holes 246 is the same. However, the spacing between each pair of holes 246 is in the x direction (the direction perpendicular to the direction of crossflow) because adjacent holes near the center of the inlet are farther apart than adjacent holes near the outer edges of the inlet. Is non-uniform in This x direction nonuniformity arises simply due to the projection of the angularly nonuniform holes onto the linear axis. Since the holes 246 near the center of the inlet are farther apart, the cross flow across the center of the electroplating apparatus will be somewhat lower than the cross flow near the edges.

22B shows the modeled crossflow velocity when the separation between adjacent crossflow showerhead holes 246 is not angularly uniform. Compared to the case shown in FIG. 22A, there are more showerhead holes 246 clustered near the center of inlet 250 and fewer showerhead holes 246 towards the edges of inlet 250. This results in more uniform separation between adjacent holes 246 (but less uniform separation measured by arcs between adjacent holes 246), measured in the x direction. Since the cross flow originates from these showerhead holes 246 and moves in the z direction perpendicular to the x axis, the uniform spacing of the holes 246 in the x direction results in a more uniform cross flow velocity across the face of the wafer. Can cause them. Importantly, compared to the case shown in FIG. 22A, the flow pattern of FIG. 22B is more uniform and the speed differences between the center and the edges of the device are minimized.

Other embodiments

Although the foregoing is a complete description of specific embodiments, various changes, alternative configurations, and equivalents may be used. Accordingly, the above description and examples should not be taken as limiting the scope of the invention as defined by the appended claims.

Claims (32)

As the electroplating apparatus,
(a) an electroplating chamber configured to include an electrolyte and an anode during electroplating metal on a substantially planar substrate;
(b) a substrate holder configured to hold the substantially planar substrate such that the plating surface of the substantially planar substrate is separated from the anode during electroplating;
(c) an ionically resistive element comprising a substrate opposing face separated by a gap of about 10 mm or less from said plated surface of said substantially planar substrate, said ion resistant element being said plating of said substantially planar substrate during electroplating; The ionically resistive element being at least coextensive with a face, the ionically resistive element adapted to provide ion transport through the ionically resistive element during electroplating;
(d) an inlet to said gap for introducing electrolyte into said gap;
(e) an outlet for said gap for receiving electrolyte flowing in said gap; And
(f) a plurality of fins near the inlet and adapted to produce a substantially linear cross flow pattern in the gap during electroplating,
The inlet and outlet are located near azimuth opposing peripheral locations on the plated surface of the substantially planar substrate during electroplating,
Wherein the inlet and outlet ports are configured to generate cross-flowing electrolyte in the gap to generate or maintain shear forces on the plated surface of the substantially planar substrate during electroplating. The method of claim 1,
And the ionically resistive element has a porosity of about 1-10%. The method of claim 2,
And the ion resistant element comprises at least 1000 paths through which electrolyte may flow during electroplating. The method of claim 3, wherein
At least some of the paths are configured to deliver electrolyte toward the substrate at a rate of at least about 3 cm / s at the outlet of the at least some paths. The method of claim 1,
Wherein the ionically resistive element is configured to shape an electric field during electroplating and to control electrolyte flow characteristics near the substantially planar substrate. The method of claim 1,
And a lower manifold region located below a lower face of the ionically resistive element, the lower surface facing away from the substrate holder. The method according to claim 6,
And one or more supply channels configured to deliver electrolyte from both the central electrolyte chamber and the central electrolyte chamber to both the inlet and the lower manifold region. 8. The method of claim 7,
And a pump for delivering electrolyte to or from the central electrolyte chamber. The method of claim 8,
The pump and the inlet are configured to deliver electrolyte in the gap at a crossflow rate of at least about 3 cm / s across a center point on the plated surface of the substantially planar substrate. The method of claim 1,
And a crossflow injection manifold fluidly coupled to the inlet. The method of claim 10,
Wherein the crossflow injection manifold is defined at least in part by a cavity of the ionically resistive element. The method of claim 1,
And the inlet is divided into two or more azimuthally distinct sections, and further comprising a mechanism for independently controlling the amount of electrolyte flowing into the azimuthally distinct sections of the inlet. The method of claim 1,
The fins are located downstream from the inlet and configured to divide the electrolyte flowing in the gap into adjacent streams. The method of claim 1,
And a flow restriction ring positioned over the periphery of the ionically resistive element. The method of claim 14,
And a gasket positioned between the ionically resistive element and the flow restriction ring. The method of claim 1,
And a membrane frame for supporting the membrane, wherein the membrane separates the electroplating chamber into a cathode chamber and an anode chamber. The method of claim 1,
And a weir wall positioned radially outwardly of said gap and configured to receive electrolyte flowing through said outlet. The method of claim 1,
Further comprising a mechanism for rotating the substrate holder during plating. The method of claim 1,
And the ionically resistive element is positioned substantially parallel to the substantially planar substrate during electroplating. The method of claim 20,
The inlet spans an arc between about 90-180 degrees near the perimeter of the plating surface of the substantially planar substrate. The method of claim 1,
The inlet spans an arc between about 120-170 degrees near the perimeter of the plated surface of the substantially planar substrate. 13. The method of claim 12,
And a plurality of electrolyte feed inlets configured to deliver electrolyte to said azimuthally distinct sections of said inlet. 13. The method of claim 12,
The mechanism for independently controlling the amount of electrolyte flowing into the azimuthally distinct sections of the inlet comprises one or more restricting elements located in one or more electrolyte flow paths. . The method of claim 1,
Wherein said outlet is divided into two or more azimuthally distinct sections. As a method of electroplating a substrate,
(a) receiving a substantially planar substrate in a substrate holder, wherein the plated surface of the substantially planar substrate is exposed and the substrate holder is an anode during the plating of the substantially planar substrate. Receiving the substrate, the substrate being configured to hold the substantially planar substrate to be separated from the substrate;
(b) immersing the substantially planar substrate in an electrolyte, wherein a gap of about 10 mm or less is formed between the plated surface of the substantially planar substrate and the top surface of the ion resistive element, wherein the ion resistive element is Immersing the electrolyte in at least the same space as the plating surface of the substantially planar substrate, wherein the ionically resistive element is adapted to provide ion transport through the ionically resistive element during electroplating;
(c) contacting the substantially planar substrate in the substrate holder (i) from a side inlet to the gap and out of a side outlet and (ii) from below the ionically resistive element, the Flowing electrolyte through the ion resistant element, into the gap and out of the side outlet, wherein the inlet and outlet are located near azimuthally opposing peripheral locations on the plated surface of the substantially planar substrate; Flowing the electrolyte, wherein the inlet and outlet and a plurality of fins near the inlet are designed or configured to produce or maintain a cross-flow electrolyte in the gap during electroplating;
(d) rotating the substrate holder; And
(e) electroplating a material on the plated surface of the substantially planar substrate while flowing the electrolyte as in (c) above. 26. The method of claim 25,
Flowing the electrolyte of (c) comprises flowing the electrolyte at a crossflow rate of at least about 3 cm / s across a center point on the plated surface of the substantially planar substrate. Way. 26. The method of claim 25,
During the step (c), the electrolyte exits the ion resistant element at a rate of at least about 3 cm / s. 26. The method of claim 25,
Wherein the lateral outlet is separated into two or more azimuthally distinct lateral outlet sections. 29. The method of claim 28,
Flowing the electrolyte through at least two said azimuthally distinct side outlet sections at different flow rates. 26. The method of claim 25,
Flowing an electrolyte in (ii) of (c) comprises flowing an electrolyte to impinge an electrolyte on the plated surface of the substantially planar substrate. 26. The method of claim 25,
Wherein the lateral inlet is separated into two or more azimuthally distinct side inlet sections, further comprising flowing an electrolyte at different flow rates through the at least two azimuthally distinct side inlet sections; How to plate. 26. The method of claim 25,
Wherein the total flow rate of electrolyte into the gap is between about 1-60 L / min.

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