KR20130118021A - Probe card - Google Patents

Abstract

It solves problems such as contact failure due to relative positional shift due to temperature change, breakage of the connection point, etc., ensures electrical property inspection of all semiconductor chips even in a wide temperature range, and provides an inexpensive probe card. To this end, a reinforcing plate using a material similar to the thermal expansion coefficient of a silicon wafer, a metal base, and a probe assembly fixing plate were collectively fixed, and the connection between the probe and the wiring board was made with only spring force in the vertical direction. Moreover, it was set as the structure in which the relative position in the probe longitudinal direction (X direction) and the vertical direction (Z direction) of the adjacent probe connection terminal end exists in multiple values, and it was set as the structure which can attach or detach one or several probes.

Description

Probe card {Probe card}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe card of a prober device used for circuit inspection of a plurality of semiconductor chips formed on a semiconductor wafer in a manufacturing process of an electronic device such as an LSI. In particular, the present invention relates to a probe card used for a probing test in which the probe is brought into contact with a circuit terminal (pad) arranged on a semiconductor chip as it is in a wafer state, and the electrical conduction of the semiconductor chip is collectively measured.

As the semiconductor technology advances, the degree of integration of electronic devices is improved, and the number of electrode terminals (pads) on each semiconductor chip is increased, thereby miniaturizing the pad arrangement due to the reduction of the pad area and the narrowing of the pad pitch.

Further, for the purpose of lowering the cost of semiconductors, the size of silicon wafers has been increased in size and has been shifted from 300 mm in diameter to 450 mm in diameter. In addition, in order to secure the quality of LSI products in a wafer state, widening of the inspection environment temperature (for example, at most -50 ° C to 150 ° C) is required.

On the other hand, even in a probe card in which pads on a semiconductor circuit are used for inspection of a semiconductor circuit toward an electrical connection by a probe needle, in order to cope with semiconductor technology, there is an increasing demand for densification of probe arrays and collective inspection of large wafers.

In general, a probe card includes a ceramic substrate on which a probe is arranged on one side and a connection terminal electrically connected to each probe is arranged on the other side, as disclosed in, for example, Japanese Patent Laid-Open No. 2007-3334. It is formed by dividing into a plurality of substrate portions and holding the plurality of ceramic substrate portions integrally like a sheet using a frame to obtain a probe substrate of a desired size.

However, in the probe card of the configuration disclosed in Japanese Patent Laid-Open No. 2007-3334, since a multilayer ceramic substrate is used, when applied to large diameter of a silicon wafer, it may be caused by disconnection or non-inspection electrode pad due to heat shrinkage due to temperature change. There arises a problem that the influence of misalignment becomes remarkable. In addition, in order to cope with an increase in the number of wirings due to the large diameter of the silicon wafer, multilayering is required, resulting in a problem of increased cost of the substrate. In addition, since a large number of probes are fixed to the ceramic substrate even when divided into a plurality of substrates, the probe includes a good product mounted on the divided substrates when it is necessary to replace them due to poor adhesion during assembly or damage to the probe during inspection. The whole need to be exchanged, which leads to a cost increase.

Japanese Patent Laid-Open No. 2007-3334

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has a probe assembly structure capable of following a displacement amount of an electrode pad on a silicon wafer due to a wide range of temperature in a probe card which simultaneously inspects all semiconductor chips on a wafer at the same time. By having a structure in which one or a plurality of probes can be replaced, it is possible to ensure electrical property inspection of all semiconductor chips and to provide an inexpensive probe card.

MEANS TO SOLVE THE PROBLEM In order to solve the said subject, the external connection board which has a connection part with a tester in the outer edge part, and the wiring path from this connection part, the intermediate wiring board which connects the said external connection board and a probe, A metal base having a diameter substantially the same as that of the external connection substrate, a probe assembly in which a plurality of the probes are regularly arranged and integrated at positions corresponding to one or two or more inspected semiconductor chip electrodes, and one or two or more sets A probe assembly fixing plate for fixing the probe assembly to a position corresponding to a part or all of the semiconductor chip electrodes to be inspected on the semiconductor wafer, integrally fixing the reinforcement plate, the metal base, and the probe assembly fixing plate, Fix the external connecting substrate between the reinforcing plate and the metal base, That was fixed to the substrate between the metal base and the probe fixed plate assembly in its default configuration, and to follow-up probes assembled in the amount of displacement of the electrode pads of a wide range of temperature changes.

Since at least the thermal expansion coefficients of the reinforcing plate, the metal base, and the probe assembly fixing plate are formed of a material close to the thermal expansion coefficient of the semiconductor wafer, it is possible to follow the displacement amount of the electrode pad by a wide range of temperature changes.

The probe assembly has a structure in which a plurality of the probes are mounted on one or two or more support rods in a notch processed on the surface of the probe, and the support rods are held and fixed on one or two or more fixing side plates. Therefore, attachment and detachment of a probe is possible in one unit.

The probe assembly holding plate has a plurality of lattice openings, and one or two or more of the openings and a part of the fixing side plate of the probe assembly are fitted or mechanically combined so that the probe assembly is fixed to the probe assembly holding plate. Because of the configuration, the attachment and detachment in the probe assembly unit is possible.

Since the intermediate wiring board is sandwiched between the metal base and the probe assembly fixing plate, and is fixed at a plurality of positions with a pitch of approximately equal intervals together with the metal base and the probe assembly fixing plate, the intermediate wiring having different thermal expansion coefficients. By forcibly fixing the substrate at a plurality of positions, the relative positional deviation from the probe is reduced, and the probe assembly structure can follow the displacement amount of the electrode pad due to a wide range of temperature changes.

The first wiring board includes a plurality of pad portions in contact with the probe output terminal on one or two or more non-conductive film surfaces, and a wiring pattern portion extending from the pad portion in the direction of the external connection board. And a second wiring board having a wiring pattern including a plurality of circumferential wiring patterns connected to the first wiring board and connected to the external connection board on one or two or more non-conductive film surfaces. Therefore, inexpensive wiring becomes possible.

Since the probe output terminal generates a spring force in the vertical direction (Z direction), contacts the connection pad of the intermediate wiring board with the spring repulsive force, and is not constrained in the plane direction (XY direction). The wide range of temperature changes makes it difficult to disconnect even if a relative positional shift occurs between the probe and the connection pad of the intermediate wiring board.

Since the probe is composed of a thin plate-like probe by etching, it can be arranged at a narrow pitch to cope with multipinning.

There are a plurality of different types of probes formed such that the relative positions of the adjacent probe output terminals in the probe length direction (X direction) are approximately 0.5 mm or more apart, or the vertical direction of the ends of the probe output terminals ( Z-direction) configuration is such that a plurality of different kinds of probes are formed so that the position thereof coincides with the Z-direction position of the pad portion in each layer of the intermediate wiring board, so that wiring in the vicinity of the probe output terminal becomes easy. Inexpensive substrates can be produced.

The slit or notch having a width slightly larger than the cross-sectional shape in the vicinity of the contact portion of the probe with the electrode pad and having a width substantially equal to or smaller than the pad width in the adjacent pad direction (Y direction) is examined. And a plurality of probe sheets arranged at a position corresponding to a part or all of the pads of each semiconductor chip, and having a probe tip for determining the probe tip position by inserting the probe tip into the slit, wherein the coefficient of thermal expansion of the probe array guide sheet Since the structure is formed of a material close to the thermal expansion coefficient of the semiconductor wafer, it is possible to follow the amount of displacement of the electrode pad due to a wide range of temperature changes and to assemble the probe with little displacement of the probe tip due to the increase in the number of contacts. Let's do it.

The probe has a notch for inserting the support rod, and the opening width (Z-direction width) of the notch is slightly larger than the height in the Z direction of the support rod to which the notch is fitted, along the XY plane from the open end side of the notch. Since the support rod can be inserted from one direction, each probe can be attached or detached even after assembly.

 According to the probe card of the present invention, in the probe card which simultaneously inspects all the semiconductor chips on a large wafer at the same time, since the probe end position is configured to follow the thermal contraction of the silicon wafer, contact failure due to relative position shift due to temperature change or It solves problems such as connection point breakage, ensures the inspection of electrical characteristics of all semiconductor chips over a wide temperature range, and has the effect of providing an inexpensive probe card by replacing one or more probes after assembly. .

The invention is explained in more detail on the basis of the embodiments shown in the drawings.

1 is a perspective view showing a probe card according to a first embodiment of the present invention.
2 is a partially enlarged view of Fig.
3 is a cross-sectional view of the entire probe card showing an embodiment of the present invention.
4 is a front view of a probe card showing an embodiment of the present invention.
5 is a partially enlarged view of Fig.
6 is a partial cross-sectional view of the outer peripheral part of FIG. 3.
FIG. 7 is a partial cross-sectional detail view of the outer circumference of FIG. 3.
8 is a partial detail view of FIG. 7.
9 is a perspective view showing a second embodiment of the present invention.
10 is a partial cross-sectional detail view of the outer circumferential portion in FIG. 9.
11 is a partial view showing a second embodiment of the present invention.
12 is a partial detailed view of FIG. 10.
13 is an overall operation explanatory diagram according to the embodiment of the present invention.
It is a partial operation explanatory drawing which concerns on embodiment of this invention.
It is a partial operation explanatory drawing which concerns on embodiment of this invention.
It is a partial operation explanatory drawing which concerns on embodiment of this invention.

Embodiments of the present invention will be described in detail with reference to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a first embodiment of the present invention, a perspective view showing an approximate structure of a probe card, Fig. 2 is a partially enlarged view of Fig. 1 showing a mounting state of a probe in detail, and Fig. 3 is a probe card. 4 is an overall view of the probe card viewed from the wafer side. In each of the drawings after FIG. 1 (most but not all), some or all of the axes of X, Y, and Z are described, which represents the axes of the XYZ three-dimensional rectangular coordinate system in each drawing.

(Total configuration)

1 to 4, 100 is a probe card showing an embodiment of the present invention, which is installed on a holder 101 of a prober (not shown), and on the electrode pad 103 on the wafer under test 102. The test is carried out by contact. 104 denotes a group of pogo pins for transmitting and receiving tester signals, and 6 denotes a connection portion 61 (for example, a land) with the pogo pin 104 at an outer edge thereof and a wiring path (including a through hole) from the connection portion 61. The external connection substrate 5 has a metal base having a diameter substantially the same as that of the external connection substrate 6, and an opening 51 is provided at a position corresponding to the connection portion 61 and is fixed to the external connection substrate 6. It is. 4 is an intermediate wiring board which connects the said external connection board 6 and the some probe 1 to it. 3 is a probe assembly holding plate, and has a plurality of lattice-shaped openings 31 for placing and fixing the probe assembly described later.

As shown in detail in Figs. 2A and 2B, 2 is integrated by regularly arranging a plurality of probes 1 at positions corresponding to one or two or more inspected semiconductor chip electrodes. As one probe assembly, one or two or more sets of the probe assemblies 2 are disposed and fixed to the probe assembly holding plate 3 at positions corresponding to some or all of the semiconductor chip electrodes to be inspected on the semiconductor wafer.

8 is a probe end guide plate for determining the end position of the probe 1, and a slit 81 for inserting the end of the probe 1 is provided and fixed at an appropriate height through the ring 52. On the other hand, a reinforcing plate 7 for maintaining the strength of the entire probe card was provided on the opposite side of the external connection board.

(Probe assembly)

2 is an explanatory diagram showing the configuration of the probe assembly 2. 2 (a) and 2 (b), 21 shows a supporting rod and 22 shows a side plate for fixing. The probe assembly is inserted by sequentially inserting the plurality of probes 1 into the supporting rods 21 and fixed to the plurality of fixing side plates 22 by regularly arranging and fixing the plurality of probes 1 at positions corresponding to the electrode pads of the semiconductor chip under test. (2) is constituted. Thereby, it can be set as the probe assembly 2 which was arrange | positioned regularly and integrated in the position which opposes the chip electrode group of one or two or more to-be-tested semiconductor. Although the figure shows the case where the support rod which installed five probes was attached to the two fixing side plates 22, and made it as a component of one probe assembly, the number of probes or the number of support rods is not limited to this. .

(Probe assembly fixing plate)

As shown in FIG. 1 and FIG. 2B, the plurality of probe assemblies 2 are partially or completely inspected on a semiconductor wafer in the lattice opening 31 of the probe assembly fixing plate 3. By arranging and fixing the electrode 103 so as to be in a position opposed to the electrode 103, all the probes can be provided at a predetermined position. The method of fixing the probe assembly 2 and the probe assembly fixing plate 3 can be implemented by screwing or mechanical fitting.

FIG. 5 is a partially enlarged view showing an example of a mounting state of the probe in FIG. 4 in detail. FIG. In FIG. 5, 20 shows a set of such probe assemblies. In this example, the probe assembly for the inspection of the 6x4 test chip 105 (the diagonal part corresponds to one LSI chip) is comprised. The number of mounts of the probe 1 in the probe assembly 2 can be arbitrarily selected by the size of the target LSI, the electrode pad arrangement, or the like.

FIG. 6 shows a partial cross-sectional view at the outer periphery of the probe card corresponding to part A of FIG. 3, illustrating the structure of the probe and the connection structure from the probe to the tester. 7 is a partial sectional view showing the relationship with the probe 1 in more detail.

(Probe structure)

In FIG. 7, the structure and the connection relationship of the probe 1 will be described. A conductive pattern 17 composed of a conductor including a parallel spring portion 13A that uses a resin film 12 to which a metal foil 11 is bonded and etches the metal foil 11 to function as a probe on the resin film. Was formed, and the output terminal 18 to the intermediate wiring board 4 was provided using the conductor projected from the opposite side of the parallel spring portion 13A as the parallel spring portion 13B.

The said parallel spring part 13A as a probe function which contacts the electrode pad 103 forms the parallelogram spring by the vertical probe 14, the two parallel beams 15a, 15b, and the fixing part 16. As shown in FIG. When the electrode pad 103 starts to contact the end portion 14A of the vertical probe 14, and the pressing force increases, the vertical probe 14 generates a spring force in the vertical direction (Z direction). In the meantime, electrical conduction is made with the electrode pad 103.

Similarly, the said output terminal 18 comprises the parallel spring part 13B which consists of parallel beams 15a and 15b. When the spring is fixed to the intermediate wiring board 4, spring force is generated in the vertical direction (Z direction), and the pad 42 of the intermediate wiring board 4 is brought into contact with the repulsive force of the spring to make electrical contact with the wiring board. Continuity occurs. The spring load on the pad 42 of the intermediate wiring board of the output terminal 18 is always loaded after being fixed to the probe assembly fixing plate 3 of the probe assembly 2.

(Probe mounting structure 1)

In FIG. 15, a method of mounting the probe 1 to the supporting rod 21 will be described. As shown in Fig. 15A, the upper and lower copper foil portions 17A and 17B of the notch 19 provided on the probe 1 extend toward the opening of the notch 19 to stopper 191A, (191B) was installed. The stopper 191A, 191B has the copper foil parts 17A, 17B as a point, respectively, and rotation operation Ma, Mb by the spring force in a micro range is produced in the plane YZ direction.

(Home of support rod)

In addition, as shown in FIG. 15A, the groove 24 is formed in advance so that the probe 1 may be installed at a predetermined position on one side 21a of the supporting rod 21 that is in contact with the probe 1. The probe can be arranged at a more accurate position. In the example of a figure, although the groove | channel is provided only in one side surface 21a, you may provide a groove in the other side surface 12b or 12c which contact | connects the said probe 1.

(Detachment of the probe)

In FIG. 15, a detachment operation between the probe 1 and the support bar 21 will be described. In Fig. 15A, the opening width W1 of the notch 19 is set slightly larger than the height Wr in the Z direction of the supporting rod 21, and the distance (the distance between the ends 192A and 192B of the stopper) Ws) is set slightly smaller than Wr.

When the probe 1 is inserted into the support rod 21, the stoppers 191A and 191B are pushed up and down, and as shown in FIG. 15B, the stopper is completed when the insertion of the support rod 21 is completed. 191A, 191B return to the original relative distance Ws by the spring force repulsion, and lock the support rod 21. In addition, once the inserted probe 1 has an accident due to breakage or the like, the probe 1 can be attached and detached by pressing the stoppers 191A and 191B up and down again using a jig or the like.

Because of this structure, the probe 1 can be attached or detached by operation only in the planar direction (XZ plane direction) of the probe 1, so that only one probe can be attached or detached even after assembling as shown in Fig. 15C.

(Probe mounting structure 2)

In FIG. 16, another embodiment of mounting the probe to the support rod will be described. As shown in Fig. 16A, the notch 19a of the opening width W1 and the notch 19b of the opening width W2 smaller than the opening width 19a are provided in the probe 10D, The stoppers 191A and 191B were provided on the copper foil portions 17A and 17B above and below the notches 19a and 19b to extend toward the openings of the notches 19a. The stopper 191A, 191B has the copper foil parts 17A, 17B as a point, respectively, and the rotation operation Ma, Mb by the spring force in a micro range in a plane YZ direction generate | occur | produces.

As shown in Fig. 16A, the supporting rod 211 has an outer shape of Wra and Wrb in the Z-direction height so as to contact the notches 19a and 19b of the probe 10D, respectively. Grooves 242 are provided in advance in the side surfaces 211a and 211c (not shown) having a height in the Z direction, and the grooves 241 in the side surfaces 211b and 211d (not shown) having a height in the Z direction. In the same manner as in the above-described embodiment, the probe 10D is inserted into a predetermined groove, and as shown in FIG. 16B, the stoppers 191A and 191B have the spring force. The backlash returns to the original relative distance Ws to lock the support rod 211.

(Home of support rod)

Fig. 16C shows details of the grooves 241 and 242. The groove 241 is a groove used for a probe array having a very narrow adjacent pitch Pf (approximately Pf = 25 μm or less), and the groove 242 has a probe array having a relatively large adjacent pitch Pw (approximately). Pw = 200 µm or more). The groove 242 having a large pitch can be formed by means of direct etching or laser cutting on the metal of the support rod 211, but the groove 241 of the narrow pitch is finely etched by applying stress to the glass. (For example, JP-A-2009-190908) and the like, and can be produced by attaching a glass material finely processed to the side surfaces 211b and 211d of the support bar.

(Mounting-3 form of probe)

An embodiment of mounting a probe using the above-described support rod 211 will be described in detail with reference to FIGS. 16E to 16G. In the drawing, the height in the Z direction of the supporting rod 211 is Wra, Wrb, and the distance between the effective bottom surfaces of the grooves 242 of the side surfaces 211a and 211c (the surface through which the probe can pass, the same below) Wr1, The distance between the effective bottom surfaces of the grooves 241 of the side surfaces 211b and 211d is Wr2, the distance between the stopper ends of the probe 10D is Ws, the opening width of the notches 19a is W1, and the notch ( The opening width of 19b) is called W2. The distance Ws between the ends of the stopper is set slightly smaller than the effective bottom surface distance Wr1 of the groove 242 and is common in all embodiments.

FIG. 16E is a diagram showing the dimensional relationship in the case where the adjacent pitch is only a relatively large probe arrangement. In this embodiment, Wra> W1> Wr1 and W2> Wrb, and by using only the groove 242, a support rod for a probe array having a relatively large pitch is used.

FIG. 16 (f) is a diagram showing the dimensional relationship in the case where only the adjacent pitches of narrow probe arrays are used. In this embodiment, W1> Wra and Wrb> W2> Wr2 are used, and by using only the said groove | channel 241, it becomes the support bar for exclusive use of the probe array of very narrow pitch shown to Fig.16 (d).

FIG. 16G illustrates a dimensional relationship when the groove 241 and the groove 242 are used. In this embodiment, Wra> W1> Wr1 and Wrb> W2> Wr2 are used, and both the grooves 241 and 242 are used. This makes it possible to use probe arrangements with a narrow pitch and coarse pitch. In addition, even when the adjacent pitch is only a narrow array of probes, passing through the grooves 242 for each period or signal function unit facilitates the identification of the pin arrangement number, resulting in the prevention of misalignment during or after assembly.

In the present embodiment, since the probe 10D can be attached and detached only by the plane direction (XZ plane direction), even if adjacent probes are arranged at a narrow pitch as shown in FIG. Only probes can be removed or replaced.

The supporting rods 211 of the above-described embodiments can be used for narrow pitch pitch arrays (e.g., liquid crystal driver LSI) and probe arrays with narrow pitch and coarse pitch (e.g., logic LSI).

(Probe; no resin film)

The probe in this example exemplifies a manufacturing method of using a resin film bonded with a metal foil and etching the metal foil, but can also be applied to a probe having only a metal foil without using a resin film.

(Connection configuration)

6 to 8, the connection structure from the probe 1 to the pogo pin 104 to interface with the tester signal will be described.

(Intermediate wiring board; basic configuration)

7 and 8, the basic configuration of the intermediate wiring board 4 will be described in detail. As shown to Fig.8 (a), the said intermediate | middle wiring board 4 is based on the double-sided two-layer flexible board by which copper foil was adhere | attached on both surfaces of the non-conductive film 41A, such as polyimide.

7 and 8B, a plurality of pads 42-1 to 42-3 in contact with one end of the probe output terminal 18 on one copper foil surface 41B1, and the pads 42- Wiring patterns 43-1 extending in the outer circumferential direction in which the connecting portion 61 with the pogo pins 104 are located in 1) to 42-3, and connecting to the through holes 64 of the corresponding external connecting substrates. ) Through (43-3), and through-hole group 44 for connecting to the opposite copper foil surface 41B2 by etching. As needed, the copper foil surface 41B2 can etch a beta pattern of copper foil, and can ensure impedance matching by the dimensional relationship with the wiring patterns 43-1-43-3. As an example, the thickness of a board | substrate is 35 micrometers as thickness of copper foil, and 25 micrometers is common as thickness of the polyimide which is a nonelectroconductive film. Probe by making the intermediate wiring board 4 which wired the wiring pattern by the above structure with respect to all the probes, and connecting by the through-hole 64 of the said said external connection board | substrate by soldering or press-fitting, etc. Electrical connection between (1) and the pogo pin 104 becomes possible.

(Intermediate wiring board; multi-pin wiring)

9 is a partial perspective view showing a second embodiment of the present invention. It is predicted that the number of pins will reach from ten thousand to tens of thousands in the wafer front batch probe card. In the case where the number of pins increases, a plurality of intermediate wiring boards are naturally required in multiple layers. The structural example in that case is shown in FIG. 9 and FIG.

In FIG. 9, 45A, 45B, and 45C are board | substrates for outer peripheral wirings, and are board | substrates which have the above-mentioned basic structure. 46 is a circumferential wiring board, a plurality of wiring patterns in the circumferential direction and a wiring pattern extending from the wiring pattern to a position of a through hole for connection with the external connection board 6, and each of the outer circumferential wiring boards 45; It has a through hole for connection with. The outer peripheral wiring boards 45A, 45B, 45C and the circumferential wiring board 46 are respectively polymerized through an insulating film (not shown) to correspond to the circumferential wiring board 46, respectively. Electrical connection is performed to the through hole by soldering or press fitting such as a connecting pin. After the electrical connection is made, the probe assembly is fixed between the fixing plate 3 and the metal base 5, and fixed by means of screw fixing or the like to integrate.

(Detailed description of connection from probe to external connection board)

10 to 12, the connection structure from the probe 1 to the pogo pin 104 that interfaces with the tester signal will be described. FIG. 10 is a detailed cross-sectional view illustrating the connection structure from the probe to the pogo pin, FIG. 11 is a diagram showing the dimensional relationship of the end coordinates of the output terminal 18 of the probe 1, and FIG. Partial detailed views of the intermediate wiring board 4 when the peripheral wiring boards 45A, 45B, 45C and the circumferential wiring board 46 are polymerized through the insulating film 47, respectively. Illustrated.

(Probe X, Z direction step connection)

10 to 12, a method of connecting the outer peripheral wiring boards 45A, 45B, and 45C to the corresponding probes will be described. The output terminals of the probes 10A, 10B, and 10C corresponding to the electrode pads 103A, 103B, and 103C are referred to as 18A, 18B, and 18C. When manufacturing each probe, an external design is designed so that the output terminals 18A, 18B, and 18C may have the dimensional relationship shown in FIG. 11 in advance. Even probes with different appearances can be manufactured at low cost by batch etching on the same metal foil.

In the example of FIGS. 10-12, the end position of the output terminal 18B with respect to the output terminal 18A is provided in the position which shifted (DELTA) x1 in the X direction, and (DELTA) z1 in the Z direction. The end position of the output terminal 18C is provided in the position which shifted (DELTA) x2 and (DELTA) z2, respectively. By shifting the end position in the X direction, the output terminals 18A, 18B, and 18C of the probe, even if the electrode pads 103A, 103B, 103C are very close to a narrow pitch (for example, 50 µm) ) May be arranged at the minimum through hole pitch (for example, 0.5 mm pitch) in an inexpensive resin substrate. Moreover, by shifting the end position in the Z direction, it is possible to connect directly to the outer peripheral wiring board 45 from the output terminal of the probe without through-hole connection to each corresponding substrate. This facilitates wiring from the multi-pin probe to the external connection board while having a narrow pitch.

(Configuration of External Connection Board)

As shown in FIG. 6, FIG. 7, and FIG. 10, the said external connection board 6 has the land group 63 which contacts the pogo pin 104 which interfaces with a tester signal, and the said land group 63. As shown in FIG. It has a through-hole 64 as a wiring path connected to the opposite side of the external connection board 6 in the vicinity of. The electrical connection between the intermediate connecting board 4 and the external connecting board 6 is connected by soldering or pressing through a connecting pin through a corresponding through hole.

10 and 12, the connection from the probe to the external connection board will be described in detail. When the tip of the probe 10A contacts the electrode pad 103A, electrical conduction of the test signal is initiated. Since the end of the probe's output terminal 18A is connected to the pad 42A of the first outer peripheral wiring board 45A, the electrical signal is circumferentially connected by the wiring pattern 43A from the pad 42A to the outer edge. It is connected to one circumferential wiring 461A of the circumferential wiring board 46 via the through hole 44A from just below the board 46, and further corresponds to the corresponding pore of the external connection board 6. A through hole 641A connected to the land 631A from the pin land 631A is connected to the land 631A via a wiring pattern.

In the probe 10B corresponding to the electrode pad 103B, the end of the output terminal 18B of the probe is connected to the pad 421B of the second outer peripheral wiring board 45B. At this time, an opening 48A is provided in the first outer peripheral wiring board 45A so that the end of the output terminal 18B of the probe is directly connected to the pad 42B. The electrical signal is transmitted from the pad 42B to the outer periphery of one circumferential wiring of the circumferential wiring substrate 46 via the through hole 44B from immediately below the circumferential wiring substrate 46 by the wiring pattern 43B. 461B is connected to the land 631B via a wiring pattern through a through hole 641B connected to the land 631B from the vicinity of the corresponding pogo pin land 631B of the external connection board 6. do.

Similarly, in the probe 10C corresponding to the electrode pad 103C, the end of the output terminal 18C of the probe is connected to the pad 42C of the third outer peripheral wiring board 45C. At this time, the openings 48B are provided in the first and second outer peripheral wiring boards 45A and 45B so that the ends of the probe output terminals 18C are directly connected to the pads 42C. The electrical signal is transmitted from the pad 42C to the outer edge portion of the circumferential wiring board 46 via the through hole 44C from directly under the circumferential wiring board 46 by the wiring pattern 43C. 461C and a through-hole 641C connected to the land 631C from the corresponding pogo pin land 631C of the external connection board 6 via the wiring pattern to the land 631C. do.

According to the above-described structure and operation, the number of wirings can be increased by increasing the number of wirings, and the wiring pattern of the circumferential wiring board 45 is standardized and the through-holes are selected to form an external connection board. Since wiring is possible, even when the LSI model is changed, it is possible to manufacture a so-called multi-layered board at a lower cost than designing and manufacturing a new one.

(Part wearing relations)

Hereinafter, the relationship between the reinforcement plate 7, the metal base 5, the probe assembly fixing plate 3, and the external connection board 6 and the intermediate connection board 4 will be described in detail.

(Relationship between Opening and Intermediate Connection Board)

As shown in FIGS. 6 and 7, the intermediate connecting substrate 4 is interposed between the metal base 5 and the probe assembly fixing plate 3 having the same diameter as the external connecting substrate 6. Through the opening 31 provided in the probe assembly fixing plate 3, the connection between the output terminal 18 of the probe and the pad portion 42 of the intermediate connecting substrate 4 is possible. In addition, the external connection board 6 and the intermediate wiring board are fixed by an opening 51 fixed to the external connection board 6 on the opposite side of the metal base 5 and provided in the periphery of the metal base 5. Enable connection with (4).

(Fixing method of reinforcing plate, metal base and intermediate connection board)

As shown in FIG. 6, the reinforcing plate 7, the metal base 5, the probe assembly fixing plate 3, and the intermediate wiring board 4 are fixed by a plurality of partial screws 72, 73. The thermal expansion coefficients of the reinforcing plate 7, the metal base 5, and the probe assembly fixing plate 3 are similar to the thermal expansion coefficient of the semiconductor wafer. Since the metal base 5 and the probe assembly holding plate 3 are changed to approximately the same amount of shrinkage in accordance with the heat shrinkage, the probe fixed to the probe assembly holding plate 3 is also followed, so that the probe tip is always attached to the electrode pad even under a wide range of temperature changes. Can be contacted.

On the other hand, since the intermediate wiring board 4 is made of copper foil, polyimide, or the like, the intermediate wiring board 4 has a larger value than the thermal expansion coefficient of the silicon wafer, and is sandwiched between the metal base 5 and the probe assembly fixing plate 3, and XY By restraining the displacement in the XY direction by means of screwing, for example, a plurality of partial screws on the surface, even when heat shrinkage occurs due to the temperature change, the above-mentioned element in the small range of the intermediate wiring board 4 (e.g., 10 to 20 target LSIs) The displacement amount of the intermediate wiring board 4 can be reduced.

In addition, by dispersing the end positions of the above-described output terminal 18, the pad area on the intermediate wiring board 4 can be made large, so that the output terminal 18 is not connected to the intermediate wiring board 4 even when heat shrinkage occurs due to temperature change. Does not come off from the pad portion 42 of the pad. In addition, since the output terminal 18 of the probe 1 and the pad 42 of the intermediate connecting board 4 are contacted only by the spring force in the Z direction and are not restrained in the XY plane direction, the heat shrinkage difference due to the temperature change is different. If it does, it does not break the contact point.

(Method of fixing metal base, reinforcement plate and external connection board)

6, the fixing relationship between the metal base 5, the reinforcement plate 7, and the external connection board 6 will be described. The reinforcing plate 7 was sandwiched by the external connection board 6 and fixed to the metal base 5 by a screw 72 at a plurality of positions. At this time, the spacer 71 is fixed to the through hole 65 of the screw 72 of the external connection board 6 via the spacer 71. The Z-direction height of the spacer 71 is set slightly larger than the thickness of the external connection board 6. As a result, a gap is secured between the external connection board 6 and the metal base 5 and the reinforcing plate 7, so that only the Z direction is constrained by the fixing of the screw 72 and not the XY direction. Do not.

In the through hole 65 of the external connection board 6, the inner diameter of the hole 65a is set slightly larger than the outer dimension of the spacer 71 in the hole 65a near the center of the substrate. In the hole 65b near the outer circumference, the inner diameter of the hole 65b is set larger than the inner diameter of the hole 65a near the center portion. As a result, the external connection substrate 6 having a large coefficient of thermal expansion is displaced in the circumferential direction independently of the thermal contraction of the metal base 5 and the reinforcing plate 7 as the temperature changes. In addition, even if a warp occurs in the external connection board 6 by providing a gap between the metal base 5 and the reinforcement plate 7, the metal base 5 and the reinforcement plate 7 of the warp. The effects on can be minimized. Therefore, there is an effect that the operation of the probe end is stable.

(Relationship of entire heat shrinkage movement)

Fig. 13 is a schematic diagram illustrating an operation for thermal contraction of each unit according to the temperature change in the probe card constructed by the embodiment of the present invention. 13, the overall heat shrink operation relation will be described.

In FIG. 13, CTE1 is a thermal expansion coefficient [1 / K (° C.)] of the metal base 5, the reinforcement plate 7, and the probe assembly fixing plate 3, and is a material that approximates the thermal expansion coefficient of a semiconductor wafer (eg, For example, Fe-36Ni alloy) was used. CTE2 is a coefficient of thermal expansion of the semiconductor silicon wafer 102, and CTE3 is a coefficient of thermal expansion of the external connection board 6 and the intermediate wiring board 4.

The metal base 5, the reinforcement plate 7, and the probe assembly fixing plate 3 use a material close to the coefficient of thermal expansion of the semiconductor wafer 102, and also have an XY plane on the screws 72 and 73, respectively. Since it is fixed in parallel along the direction, the semiconductor wafer 102 is integrated with the heat shrinkage in the XY direction, and the heat shrinkage operation is performed substantially in phase with the semiconductor wafer 102.

On the other hand, the probe assembly 2 in a divided unit fixed to the probe assembly fixing plate 3 performs displacement movement along the heat shrinkage of the probe assembly fixing plate 3 in the divided unit. Therefore, the displacement of the end 14A of the probe 1 mounted on the probe assembly 2 follows the change in the displacement amount of the electrode pad 103 on the semiconductor wafer 102.

Since the intermediate wiring board 4 is made of a resin such as copper foil and polyimide, the intermediate wiring board 4 has a larger value than the thermal expansion coefficient CTE2 of the silicon wafer. As shown in FIG. Since the substrate is a base unit, it is sandwiched between the metal base 5 and the probe assembly fixing plate 3, and thus, a small range (e.g., 10 to 20 equivalent LSIs) is applied by means of screwing a plurality of parts in the XY plane. By restraining the displacement in the XY direction, the amount of displacement of the pad 42 of the intermediate wiring board 4 in the small range can be sufficiently reduced even in the heat shrinkage caused by the temperature change as described later.

Since the external connection substrate 6 having a large coefficient of thermal expansion has a structure that is not constrained in the XY direction in the vicinity of the surroundings as described above, it differs from the thermal contraction of the metal base 5 and the reinforcing plate 7 according to the temperature change. Are independently displaced in the circumferential direction. By providing a gap between the metal base 5 and the reinforcing plate 7, even if warpage occurs in the external connection board 6, the warpage affects the metal base 5 and the reinforcing plate 7. The impact can be minimized.

(Operation of Intermediate Wiring Board)

With reference to FIG. 14, the heat shrink operation | movement relationship of an intermediate wiring board is demonstrated in detail. FIG. 14A is a cross-sectional view showing a relationship in a thermal equilibrium state (for example, room temperature). The intermediate wiring board 4 is sandwiched between the metal base 5 and the probe assembly fixing plate 3 and is screwed by screws 73a, 73b and 73c in the XY plane. The position corresponding to the screw 73a is X0 and the position corresponding to the screw 73b is X1 and the position corresponding to the screw 73c is X2, and the distance from X0 to X1 is L1 and the distance from X1 to X2. Let L2 be.

FIG. 14B is a cross-sectional view showing the operation when ΔT ° C rises. X0 is a reference position, a position corresponding to X1 of the metal base 5 or the like in FIG. 14A is X1 ', a position corresponding to X2 is X2', and X1 of the wafer 102 is used. The positions corresponding to X1 ″ and the positions corresponding to X2 are X2 ″. As described above, the metal base 5, the reinforcement plate 7, the probe assembly fixing plate 3, and the probe assembly 2 mounted on the probe assembly fixing plate 3 are integrally stretched as described above. The position of X1 'is extended in the X direction by [CTE1 × L1 × ΔT] by the temperature rise of ΔT, and the distance between X0 and X1' is changed to L1 + [CTE1 × L1 × ΔT]. Similarly, the distance between X1 'and X2' is changed to L2 + [CTE1 × L2 × ΔT].

In the operation of the wafer 102, when X0 is a reference position, the position of X1 ″ is extended in the X direction by [CTE2 × L1 × ΔT] due to the temperature rise of ΔT, and the distance between X0 and X1 ″ is L1 + [CTE2. X L1 x DELTA T]. Similarly, the distance between X1 "and X2" is changed to L2 + [CTE2 x L2 x DELTA T]. Therefore, the probe tip 14A is formed by using a material that is close to the thermal expansion coefficient CTE1 of the metal base 5, the reinforcing plate 7, and the probe assembly fixing plate 3, and the thermal expansion coefficient CTE2 of the wafer 102. Can follow the electrode pad 103.

On the other hand, the intermediate wiring boards 4 are respectively [CTE3 × L1 × ΔT] and [CTE3 × L2 × ΔT due to the temperature rise of ΔT, as shown by the dashed arrows in Fig. 14B with respect to the original lengths L1 and L2. Although it is extended, it is constrained by screws 73a, 73b, and 73c, and extends in the X direction by the same distance as the metal base 5 or the like, and each difference is [CTE3 × L1 × ΔT]- [CTE1 × L1 × ΔT] and [CTE3 × L2 × ΔT] — [CTE1 × L2 × ΔT] are between screws 73a and 73b, and screws 73b as shown in FIG. ) And appears as a relaxation between (73c).

However, by setting the distance between the screws to restrain a small range, the displacement amount of the pad 42 of the intermediate wiring board 4 in the small range can be sufficiently reduced even when heat shrinkage occurs due to temperature change. In addition, as described above, since the end positions of the adjacent probe output terminals 18 are arranged to be distributed in the X direction, for example, 0.5 mm or more, the area of the pad 42 can be relatively large, so that the heat shrinkage according to the temperature change can be achieved. Accordingly, even if the displacement amount occurs in the pad 42, the probe output terminal 18 does not come out of the pad 42.

According to the present invention described above, in the probe card which collectively inspects all the semiconductor chips on a large wafer simultaneously, the probe end position is configured to follow the thermal contraction of the silicon wafer, so that contact failure due to relative position shift due to temperature change is prevented. In addition to solving the problems, it solves problems such as breakage at the connection point between the probe and the wiring board to ensure the electrical property inspection of all semiconductor chips over a wide temperature range, and to replace one or more probes after assembly. It is possible to provide an inexpensive probe card by using a simple structure of the intermediate wiring board as a possible structure.

The present invention can be applied to a conventional cantilever type or vertical type in addition to the thin plate type probe according to the above embodiment in a probe card which simultaneously inspects all semiconductor chips on a large wafer at the same time. In addition, according to the present invention, the probe end position can follow the thermal shrinkage of the silicon wafer, thereby solving problems such as contact failure and breakage of the connection point due to relative positional shift caused by temperature change, Probe cards that reliably perform electrical property checks are provided at low cost.

Although the present invention has been described based on the embodiments shown in the drawings, it should be understood that various changes and modifications can be made without departing from the spirit of the invention.

Claims (18)

A probe card for contacting a probe with a semiconductor chip under test and electrically connecting the tester with the tester.
A probe in contact with the semiconductor chip under test,
An external connection board having a connection portion with the tester and a wiring path from the connection portion at an outer edge thereof;
An intermediate wiring board connecting the external connection board and the probe;
A metal base having a diameter approximately equal to that of the external connection substrate,
A probe assembly in which a plurality of the probes are regularly arranged and integrated at positions corresponding to one or two or more inspected semiconductor chip electrodes;
And a probe assembly holding plate configured to fix one or two or more sets of the probe assemblies at positions corresponding to some or all of the semiconductor chip electrodes to be inspected on the semiconductor wafer,
And the metal base, the external connection board, the intermediate wiring board, and the probe assembly fixing plate integrally. The method of claim 1,
And the intermediate wiring board is sandwiched between the metal base and the probe assembly fixing plate, and is fixed at a plurality of positions with a pitch of approximately equal intervals together with the metal base and the probe assembly fixing plate. The method of claim 1,
A reinforcing plate, wherein the external connection board is sandwiched between the reinforcement plate and the metal base and is fixed at a plurality of positions along the XY plane direction through a spacer having a Z-direction height slightly larger than the thickness of the external connection board. Probe card, characterized in that. The method of claim 3,
And at least one of the reinforcing plate, the metal base, and the probe assembly fixing plate is made of a material whose thermal expansion coefficient is close to that of the semiconductor wafer. The method of claim 1,
The said probe uses the resin film to which the metal foil was adhere | attached, and forms the electrically conductive pattern which consists of a conductor containing a probe function on the resin film by etching the said metal foil, and the conductor which protruded from one side of the said resin film A probe card with a resin film, the probe end portion being a resin film having a conductor projecting from the opposite side of the probe as a probe output terminal to the intermediate wiring board. The method of claim 1,
The probe forms a conductor including a spring structure as a probe function for etching the metal foil to contact the semiconductor chip electrode to be inspected, and the conductor which protrudes from the side opposite to the semiconductor chip electrode to be inspected as the intermediate wiring board. A probe card, characterized in that the thin plate type probe has a probe output terminal. The method of claim 1,
The probe assembly is mounted on one or two or more support rods sequentially or simultaneously with a notch processed on the surface of the probe, and holds the support rods on one or two or more fixing side plates. A probe card, which is fixed and integrated. The method of claim 1,
The probe assembly holding plate has a plurality of lattice openings, and one or more of the openings and a part of the fixing side plate of the probe assembly are fitted or mechanically combined so that the probe assembly is fixed to the probe assembly holding plate. Probe card, characterized in that. The method of claim 1,
The intermediate wiring board,
A plurality of pad portions in contact with the probe output terminals on one or two or more non-conductive film surfaces;
And a wiring pattern portion extending from the pad portion in an outer circumferential direction and connected to the external connection board. The method of claim 1,
The intermediate wiring board,
A first wiring board having a plurality of pad portions in contact with the probe output terminals on one or two or more non-conductive film surfaces, a wiring pattern portion extending from the pad portion in the direction of the external connection substrate,
And a second wiring board having a wiring pattern portion including a plurality of circumferential wiring patterns connected to the first wiring board and connected to the external connection board on one or two or more non-conductive film surfaces. Probe card. The method according to claim 5 or 6,
The probe output terminal generates a spring force in the vertical direction (Z direction), press-contacts the spring pad to the connection pad of the intermediate wiring board, and is not restrained in the plane direction (XY direction). Probe card. The method of claim 5,
And a plurality of the intermediate wiring boards are stacked to have a multi-layer structure, and at least a part of each layer of the intermediate wiring board is a double-sided two-layer flexible flat cable. The method according to claim 5 or 6,
A probe card, characterized in that a plurality of types of probes having different X-direction positions are formed so that the relative positions of the adjacent probe output terminals in the probe length direction (X direction) are approximately 0.5 mm or more in sparse pitch. The method of claim 12,
A plurality of types of probes having different Z-direction lengths are used in which the vertical direction (Z-direction) position of the end of the probe output terminal is formed to coincide with the Z-direction position of the pad in each layer of the plurality of intermediate wiring boards. Probe card, characterized in that. 11. The method according to claim 9 or 10,
The slit or notch having a width slightly larger than the cross-sectional shape in the vicinity of the contact portion of the probe with the pad and having a width substantially equal to or smaller than the pad width in the adjacent pad direction (Y direction) is examined. A probe card, comprising: a guide sheet for arranging a probe at a position corresponding to a part or all of pads of each semiconductor chip, and determining a probe end position by inserting a probe end into the slit or notch. 16. The method of claim 15,
The probe sheet of the probe array is formed of a material whose thermal expansion coefficient is close to that of the semiconductor wafer. The method of claim 7, wherein
The probe has a notch for inserting the support rod, and the opening width (Z-direction width) of the notch is slightly larger than the height in the Z direction of the support rod to which the notch is fitted, along the XY plane from the open end side of the notch. Probe card, characterized in that for inserting the support rod from one direction. 18. The method of claim 17,
And at least one surface of the support bar in contact with the notch of the probe, the groove having a width slightly larger than the plate thickness of the probe.

Images