KR20130083647A

KR20130083647A - Electrostatic chuck system

Info

Publication number: KR20130083647A
Application number: KR1020120004382A
Authority: KR
Inventors: 장호승; 안호갑
Original assignee: 이지스코 주식회사
Priority date: 2012-01-13
Filing date: 2012-01-13
Publication date: 2013-07-23

Abstract

PURPOSE: An electrostatic chuck system is provided to fundamentally prevent a noise problem and the degradation of electric insulating performance by installing a power device in a metal support. CONSTITUTION: An electrostatic chuck system absorbs a substrate (40) to fix the same with an electrode. The electrostatic chuck system includes an electrostatic chuck (50) and a power device (60). The electrostatic chuck includes a metal support (53), a dielectric (51), and a bottom electrode (52). The power device is embedded in the metal support. The power device is connected with a battery (70) to receive energy. [Reference numerals] (AA) Light

Description

Electrostatic chuck system

The present invention relates to an electrostatic chuck system, and more particularly, including a power supply inside the metal support, there is a problem such as noise and electrical insulation due to the length of the wire connected by the power supply connected to the existing external The invention relates to an electrostatic chuck system having a good effect of eliminating high frequency and minimizing heat dissipation problems.

In the case of the electrostatic chuck that fixes the wafer using electrostatic force, the electrostatic chuck can be classified into a coulomb type electrostatic chuck and a Johnson-Rahbek type electrostatic chuck according to the adsorption method. In the case of the coulomb type electrostatic chuck, the volume resistivity of the dielectric used to fix the wafer by using electrostatic attraction between particles having different charges on the upper and lower surfaces of the dielectric is greater than 1E15 Ω · cm and shows good wafer detachment performance. However, in order to provide a sufficiently large electrostatic attraction force uniformly across the wafer contact surface, there is a disadvantage in that a high voltage must be applied. Too high a voltage shows various unexpected problems in the plasma apparatus. Charge problems occur.

In the case of the Johnson-Lavec type electrostatic chuck, the volume resistivity of the dielectric is controlled to 1E9 to 1E13 Ωcm to provide sufficient adsorption force to adsorb and maintain the semiconductor wafer by the air gap principle even at low voltage. The low applied voltage has an excellent advantage of low interference with bias voltage generated by the high frequency power supply in the plasma apparatus and low possibility of arcing, but when the volume resistivity of the dielectric is less than 1E9 Ω? Cm, Since leakage current causes unfavorable results in the semiconductor manufacturing process, it is desirable to control the volume resistivity of the dielectric to 1E9 to 1E13 Ω · cm.

It is applied to the etching and deposition process using plasma and the ion implantation process using high current ion beam by using the same principle as above. Coulomb type and Johnson-Labeck type dielectrics are used according to the process used. In order to generate a power supply, a separate power supply is required, and a DC power supply and an AC power supply are applied to the process as needed.

In the plasma etching and deposition process, a DC power supply is mainly applied, and a square wave AC power is used in the ion implantation process. With the use of high voltages, power supplies are typically installed outside of the electrostatic chuck as they increase in size due to the high precision and sensitive current control, heat dissipation and the necessary provision of safety devices.

As shown in FIG. 1, in the case of the existing electrostatic chuck system, as the power supply is installed outside the electrostatic chuck, a wire for connecting the power supply and the electrostatic chuck is required, and when the length of the wire is long, the insulation and the high frequency of the power supply are increased. Various problems occur, such as blocking. In addition, in order to obtain high voltage output from the power supply, commercial power must be supplied to the power supply from the outside by wire.

In addition to semiconductors and displays that have separate electrostatic chucks and power supplies fixedly used, systems that need to move large trays such as solar light or FPD cannot extend the wires indefinitely. It is practically impossible to use an external power supply.

In order to solve the problems of the prior art as described above, the present invention includes a power supply device inside the metal support, there is a problem such as noise and electrical insulation due to the length of the wire to connect due to the existing power supply connected to the outside It aims to provide the effect that high frequencies are eliminated and heat dissipation problems are minimized.

These and other objects of the present invention can be achieved by the present invention described below.

In order to achieve the above object, in the electrostatic chuck system for adsorbing a substrate and fixed to the electrode, the electrostatic chuck system includes an electrostatic chuck and a power supply, the power supply provides an electrostatic chuck system embedded inside the metal support do.

As described above, according to the present invention, there is no problem such as noise and electrical insulation due to the length of the wires connected by the power supply connected to the outside, including the power supply inside the metal support, and the high frequency The effect is eliminated and the heat dissipation problem is minimized.

1 schematically shows a conventional electrostatic chuck system.
2 schematically shows an electrostatic chuck system of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. These embodiments are provided to explain in detail the present invention to those skilled in the art.

In the present invention, in the electrostatic chuck system for absorbing and fixing the substrate 40 to the electrode, the electrostatic chuck system includes a static chuck 50 and a power supply 60, the power supply 60 is a metal support ( 53) An electrostatic chuck system embedded therein.

The substrate 40 is not limited to conventional ones used in the art, such as ceramics.

In the electrostatic chuck system of the present invention, the electrostatic chuck 50 may specifically include a metal support 53, a dielectric 51, an electrode 52, and the like.

The metal support 53 is a conventional one used in the art and does not limit its characteristics or material.

The present invention can be configured to include a power supply device 60 in the interior of the metal support (53). The power supply device 60 is used in the art and is not particularly limited. The method of embedding the power supply device 60 inside the metal support 53 or the method of fixing the power supply device 60 to the metal support 53 is not particularly limited.

The power supply device 60 may be connected to the battery 70 to receive energy. The connection of the power supply device 60 and the battery 70 is by conventional methods used in the art. The voltage of the power supply device 60 is not particularly limited, and a high voltage power supply device can be used. The meaning of the high voltage implies a common meaning used in the art.

Specifically, the battery 70 may be configured by selecting from among a primary battery, a secondary battery, and a solar cell.

The secondary battery may be a large capacity capacitor or a rechargeable battery.

The solar cell may be to supply external energy wirelessly. In particular, the present invention is to overcome the noise problem or electrical insulation problem by the length of the wire, and to use the solar cell connected to the power supply device 60 among the cells smoothly to obtain the effect for the purpose of the present invention, but limited to this It is not.

The dielectric 51 may be disposed on the metal support 53, which is the configuration of the electrostatic chuck 50. The dielectric 51 is conventional in the art and is not particularly limited.

The method of disposing the dielectric 51 on the metal support 53 also depends on the conventional method used in the art.

The dielectric 51 may have a lower electrode 52 embedded therein. The lower electrode 52 is a conventional one used in the art and is not particularly limited.

In order to facilitate coupling of the metal support 53 and the dielectric 51, an adhesive layer (not shown) may be further included.

The said adhesive bond layer (not shown) can be comprised using components, such as an insulating silicone resin.

The electrostatic chuck 50 of the present invention may be monopolar or bipolar, but is not limited thereto.

The electrostatic chuck system including the electrostatic chuck 50 of the present invention may be configured as shown in FIG. 2 below, but is not limited thereto. The RF power source 10 and the upper electrode 20 is positioned on the upper side, and the plasma may be positioned between the upper electrode 20 and the substrate 40, which is in accordance with a conventional method in the art and is not particularly limited.

In the foregoing detailed description of the present invention, specific examples have been described. However, various modifications are possible within the scope of the present invention. The technical idea of the present invention should not be limited to the embodiments of the present invention but should be determined by the equivalents of the claims and the claims.

10: high frequency (RF) power source 20: upper electrode
30: plasma 40: substrate
50: electrostatic chuck 51: dielectric
52: lower electrode 53: metal support
60: power supply 70: battery

Claims

An electrostatic chuck system for adsorbing a substrate and fixing it to an electrode,
The electrostatic chuck system includes an electrostatic chuck and a power supply,
The power supply device is characterized in that the electrostatic chuck system embedded in the metal support.

The method of claim 1,
The electrostatic chuck is a metal support;
A dielectric disposed on the metal support;
An electrostatic chuck system comprising a lower electrode embedded in the dielectric.

3. The method of claim 2,
An electrostatic chuck system further comprising an adhesive layer between the metal support and the dielectric.

The method of claim 1,
The power supply unit is connected to a battery, the electrostatic chuck system, characterized in that the supply of energy.

5. The method of claim 4,
The cell is an electrostatic chuck system, characterized in that selected from primary cells, secondary cells and solar cells.

The method of claim 5, wherein
The secondary battery is an electrostatic chuck system, characterized in that a large capacity capacitor or a rechargeable battery.

The method of claim 5, wherein
The solar cell is an electrostatic chuck system, characterized in that for supplying external energy wirelessly.

The method of claim 1,
The electrostatic chuck system of claim 1, wherein the electrostatic chuck is monopolar or bipolar.