KR20130083647A - Electrostatic chuck system - Google Patents
Electrostatic chuck system Download PDFInfo
- Publication number
- KR20130083647A KR20130083647A KR1020120004382A KR20120004382A KR20130083647A KR 20130083647 A KR20130083647 A KR 20130083647A KR 1020120004382 A KR1020120004382 A KR 1020120004382A KR 20120004382 A KR20120004382 A KR 20120004382A KR 20130083647 A KR20130083647 A KR 20130083647A
- Authority
- KR
- South Korea
- Prior art keywords
- electrostatic chuck
- chuck system
- power supply
- metal support
- dielectric
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
The present invention relates to an electrostatic chuck system, and more particularly, including a power supply inside the metal support, there is a problem such as noise and electrical insulation due to the length of the wire connected by the power supply connected to the existing external The invention relates to an electrostatic chuck system having a good effect of eliminating high frequency and minimizing heat dissipation problems.
In the case of the electrostatic chuck that fixes the wafer using electrostatic force, the electrostatic chuck can be classified into a coulomb type electrostatic chuck and a Johnson-Rahbek type electrostatic chuck according to the adsorption method. In the case of the coulomb type electrostatic chuck, the volume resistivity of the dielectric used to fix the wafer by using electrostatic attraction between particles having different charges on the upper and lower surfaces of the dielectric is greater than 1E15 Ω · cm and shows good wafer detachment performance. However, in order to provide a sufficiently large electrostatic attraction force uniformly across the wafer contact surface, there is a disadvantage in that a high voltage must be applied. Too high a voltage shows various unexpected problems in the plasma apparatus. Charge problems occur.
In the case of the Johnson-Lavec type electrostatic chuck, the volume resistivity of the dielectric is controlled to 1E9 to 1E13 Ωcm to provide sufficient adsorption force to adsorb and maintain the semiconductor wafer by the air gap principle even at low voltage. The low applied voltage has an excellent advantage of low interference with bias voltage generated by the high frequency power supply in the plasma apparatus and low possibility of arcing, but when the volume resistivity of the dielectric is less than 1E9 Ω? Cm, Since leakage current causes unfavorable results in the semiconductor manufacturing process, it is desirable to control the volume resistivity of the dielectric to 1E9 to 1E13 Ω · cm.
It is applied to the etching and deposition process using plasma and the ion implantation process using high current ion beam by using the same principle as above. Coulomb type and Johnson-Labeck type dielectrics are used according to the process used. In order to generate a power supply, a separate power supply is required, and a DC power supply and an AC power supply are applied to the process as needed.
In the plasma etching and deposition process, a DC power supply is mainly applied, and a square wave AC power is used in the ion implantation process. With the use of high voltages, power supplies are typically installed outside of the electrostatic chuck as they increase in size due to the high precision and sensitive current control, heat dissipation and the necessary provision of safety devices.
As shown in FIG. 1, in the case of the existing electrostatic chuck system, as the power supply is installed outside the electrostatic chuck, a wire for connecting the power supply and the electrostatic chuck is required, and when the length of the wire is long, the insulation and the high frequency of the power supply are increased. Various problems occur, such as blocking. In addition, in order to obtain high voltage output from the power supply, commercial power must be supplied to the power supply from the outside by wire.
In addition to semiconductors and displays that have separate electrostatic chucks and power supplies fixedly used, systems that need to move large trays such as solar light or FPD cannot extend the wires indefinitely. It is practically impossible to use an external power supply.
In order to solve the problems of the prior art as described above, the present invention includes a power supply device inside the metal support, there is a problem such as noise and electrical insulation due to the length of the wire to connect due to the existing power supply connected to the outside It aims to provide the effect that high frequencies are eliminated and heat dissipation problems are minimized.
These and other objects of the present invention can be achieved by the present invention described below.
In order to achieve the above object, in the electrostatic chuck system for adsorbing a substrate and fixed to the electrode, the electrostatic chuck system includes an electrostatic chuck and a power supply, the power supply provides an electrostatic chuck system embedded inside the metal support do.
As described above, according to the present invention, there is no problem such as noise and electrical insulation due to the length of the wires connected by the power supply connected to the outside, including the power supply inside the metal support, and the high frequency The effect is eliminated and the heat dissipation problem is minimized.
1 schematically shows a conventional electrostatic chuck system.
2 schematically shows an electrostatic chuck system of the present invention.
Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. These embodiments are provided to explain in detail the present invention to those skilled in the art.
In the present invention, in the electrostatic chuck system for absorbing and fixing the
The
In the electrostatic chuck system of the present invention, the
The
The present invention can be configured to include a
The
Specifically, the
The secondary battery may be a large capacity capacitor or a rechargeable battery.
The solar cell may be to supply external energy wirelessly. In particular, the present invention is to overcome the noise problem or electrical insulation problem by the length of the wire, and to use the solar cell connected to the
The dielectric 51 may be disposed on the
The method of disposing the dielectric 51 on the
The dielectric 51 may have a
In order to facilitate coupling of the
The said adhesive bond layer (not shown) can be comprised using components, such as an insulating silicone resin.
The
The electrostatic chuck system including the
In the foregoing detailed description of the present invention, specific examples have been described. However, various modifications are possible within the scope of the present invention. The technical idea of the present invention should not be limited to the embodiments of the present invention but should be determined by the equivalents of the claims and the claims.
10: high frequency (RF) power source 20: upper electrode
30: plasma 40: substrate
50: electrostatic chuck 51: dielectric
52: lower electrode 53: metal support
60: power supply 70: battery
Claims (8)
The electrostatic chuck system includes an electrostatic chuck and a power supply,
The power supply device is characterized in that the electrostatic chuck system embedded in the metal support.
The electrostatic chuck is a metal support;
A dielectric disposed on the metal support;
An electrostatic chuck system comprising a lower electrode embedded in the dielectric.
An electrostatic chuck system further comprising an adhesive layer between the metal support and the dielectric.
The power supply unit is connected to a battery, the electrostatic chuck system, characterized in that the supply of energy.
The cell is an electrostatic chuck system, characterized in that selected from primary cells, secondary cells and solar cells.
The secondary battery is an electrostatic chuck system, characterized in that a large capacity capacitor or a rechargeable battery.
The solar cell is an electrostatic chuck system, characterized in that for supplying external energy wirelessly.
The electrostatic chuck system of claim 1, wherein the electrostatic chuck is monopolar or bipolar.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120004382A KR20130083647A (en) | 2012-01-13 | 2012-01-13 | Electrostatic chuck system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120004382A KR20130083647A (en) | 2012-01-13 | 2012-01-13 | Electrostatic chuck system |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20130083647A true KR20130083647A (en) | 2013-07-23 |
Family
ID=48994612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120004382A KR20130083647A (en) | 2012-01-13 | 2012-01-13 | Electrostatic chuck system |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20130083647A (en) |
-
2012
- 2012-01-13 KR KR1020120004382A patent/KR20130083647A/en not_active Application Discontinuation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |