KR20130077600A - Nitride based light emitting device with nano rod of zinc oxide and producing method thereof - Google Patents
Nitride based light emitting device with nano rod of zinc oxide and producing method thereof Download PDFInfo
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- KR20130077600A KR20130077600A KR1020110146399A KR20110146399A KR20130077600A KR 20130077600 A KR20130077600 A KR 20130077600A KR 1020110146399 A KR1020110146399 A KR 1020110146399A KR 20110146399 A KR20110146399 A KR 20110146399A KR 20130077600 A KR20130077600 A KR 20130077600A
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- nitride semiconductor
- zinc oxide
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 97
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 52
- 239000002073 nanorod Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 150000003751 zinc Chemical class 0.000 claims description 6
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical group [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 6
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 3
- -1 NH 4 OH Chemical compound 0.000 claims description 2
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 2
- 239000004246 zinc acetate Substances 0.000 claims description 2
- 239000011592 zinc chloride Substances 0.000 claims description 2
- 235000005074 zinc chloride Nutrition 0.000 claims description 2
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 claims description 2
- 229940007718 zinc hydroxide Drugs 0.000 claims description 2
- 229910021511 zinc hydroxide Inorganic materials 0.000 claims description 2
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 2
- 229960001763 zinc sulfate Drugs 0.000 claims description 2
- 229910000368 zinc sulfate Inorganic materials 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 123
- 239000011701 zinc Substances 0.000 description 12
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000003102 growth factor Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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Abstract
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride semiconductor light emitting device having improved light extraction efficiency, and more particularly, to a nitride semiconductor in which zinc oxide nanorods are grown in at least one hole formed in a transparent conductive layer. A light emitting device and a method of manufacturing a nitride semiconductor light emitting device by growing the zinc oxide nanorods.
Conventional nitride semiconductor devices include, for example, GaN-based nitride semiconductor devices, which include high-speed switching and high-output devices such as blue or green LED light emitting devices, MESFETs and HEMTs, etc. It is applied to the back.
Such a conventional GaN-based nitride semiconductor light emitting device may be a nitride semiconductor light emitting device having an active layer of a multi-quantum well structure. Conventional nitride semiconductor light emitting devices include a sapphire substrate, an n-type nitride layer, an active layer and a p-type nitride layer. The transparent electrode layer and the p-side electrode are sequentially formed on the upper surface of the p-type nitride layer, and the n-side electrode is sequentially formed on the exposed surface of the n-type nitride semiconductor layer.
The conventional GaN-based nitride semiconductor light emitting device injects electrons and holes into the active layer and emits light by combining the electrons and holes.
However, in such a nitride semiconductor light emitting device, the luminous efficiency has emerged as an important problem. The luminous efficiency of the semiconductor light emitting device is determined by the light generation efficiency and the external photon efficiency of the light. The biggest problem among them is the external photon efficiency, that is, the efficiency in which the light generated from the active layer is extracted to the outside is low. Will be.
The decisive factor in reducing the external photon efficiency of the nitride semiconductor light emitting device is reflection characteristics at the interface of the light emitting device, in particular, total internal reflection. That is, due to the large difference in refractive index at the LED device interface, only a part of the generated light is extracted out of the device interface, and light that does not exit the interface is totally reflected at the interface, traveling inside the device, and attenuated by heat. As a result, total internal reflection at the LED device interface increases the amount of heat generated by the LED device and reduces the external extraction efficiency of the device.
In order to solve this problem, various external photon efficiency improvement methods have been proposed. For example, there is a method of forming a surface pattern or surface texture on the surface of the light emitting device such that photons reaching the surface are randomly scattered. For example, Korean Patent Laid-Open Publication No. 2005-0003671 discloses a technique of forming an uneven pattern or surface texture at the edge of a light emitting portion of a light emitting device. See also Daisuke Morita et al. Japanese Journal of Applied Physics, Vol. 43, No. 9A, 2004, pp. 5945-5950 discloses a process of forming an uneven pattern on the upper surface of the light emitting portion of the light emitting device using electron beam lithography and dry etching. However, since the uneven pattern is formed on the upper surface of the GaN-based semiconductor layer by wet etching or dry etching the flat upper surface of the GaN-based semiconductor layer, surface roughness due to the uneven pattern may not be uniform and may damage the active layer.
In order to improve other luminous efficiency, various studies such as surface treatment of the substrate and the formation of roughness inside the undoped GaN have been conducted, but the effect is not so high.
Accordingly, the present inventors have conducted research and efforts to develop a nitride semiconductor light emitting device having improved luminous efficiency. As a result, when a zinc oxide-based nanorod is formed in a plurality of patterned holes in a transparent conductive layer, the current is not applied to the formed holes. The present invention was completed by confirming that the density is increased and the light extraction efficiency of the light emitting device can be greatly increased by the scattering effect by the zinc oxide nanorods.
Accordingly, an object of the present invention is to provide a nitride semiconductor light emitting device exhibiting excellent luminous efficiency and a method of manufacturing the same.
The nitride light emitting device of the present invention for achieving the above object comprises a first nitride semiconductor layer doped with a first conductivity type impurities; An active layer formed on the first nitride semiconductor layer; A second nitride semiconductor layer formed on the active layer and doped with a second conductivity type impurity; And a transparent conductive layer formed on the second nitride semiconductor layer and having at least one hole formed therein, and including zinc oxide nanorods grown in the hole.
In addition, the method of manufacturing a nitride light emitting device of the present invention comprises the steps of sequentially forming a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer and a transparent conductive layer on a substrate; Etching the transparent conductive layer to form a hole, and growing zinc oxide nanorods in the formed hole.
In the nitride semiconductor light emitting device of the present invention, since the current is not applied to the portion etched in the transparent conductive layer, the current density is increased, and the extraction efficiency of light formed in the active layer can be greatly improved due to the scattering effect by the zinc oxide nanorods. Can be.
1 is a cross-sectional view of a horizontal nitride semiconductor light emitting device according to a first embodiment of the present invention.
2 is a plan view of a transparent
3 is a SEM photograph of zinc oxide nanorods grown in a horizontal nitride semiconductor light emitting device manufactured in an embodiment of the present invention.
Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described in detail below. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.
Hereinafter, a nitride based light emitting device according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.
Nitride-based light emitting device
1 is a cross-sectional view of a horizontal nitride semiconductor light emitting device according to a first embodiment of the present invention, and FIG. 2 is a plan view of the horizontal nitride semiconductor light emitting device shown in FIG.
Hereinafter, a horizontal nitride semiconductor light emitting device according to a first exemplary embodiment of the present invention will be described with reference to FIGS. 1 and 2.
As shown in FIG. 1, the horizontal nitride semiconductor
The
The n-
The
The p-
The
Next, a hole is formed in the
Zinc oxide nanorods as used herein refers to a rod-shaped material having a diameter of several nm to several tens of μm, and preferably may be formed of 1 nm to 10 μm.
The hole formed in the
In addition, the
On the other hand, the cross-sectional shape of the hole is preferably circular or rectangular, and it is preferable that the ratio A / B of the total area A of the hole to the cross-sectional area B of the transparent conductive layer is in the range of 0.05 to 0.5.
Meanwhile, about 1 to 5
Manufacturing method of nitride based light emitting device
Hereinafter, a method of manufacturing the nitride semiconductor
In the method of manufacturing the nitride semiconductor
The
The n-
Next, the
The p-
The
After forming the
When one region of the n-
Next, the transparent conductive layer is etched to form a hole, and the hole may be formed as a photoresist pattern, and the pattern may be formed by nanoimprint lithography, laser interference lithography, electron beam lithography, ultraviolet lithography, or holographic methods. Lithography or liquid immersion lithography may be used, but is not limited thereto. In this case, the hole is preferably formed through the transparent conductive layer through the transparent electrode layer.
The zinc oxide (ZnO) nanorods are grown in the formed holes, and the zinc oxide nanorods may be formed by hydrothermal synthesis. More specifically, the zinc oxide nanorods grow in the pores by immersing and heating the device having a hole in the transparent conductive layer in a culture solution containing zinc salt and a precipitant.
The generation mechanism of the nanorods is as follows. The zinc salt produces zinc ions and the precipitant provides NH 4 + and OH − . In addition, NH 4 + and OH − react to form NH 3 , and NH 3 , OH −, and Zn 2 + react with each other to form Zn (NH 3 ) 4 2+ and Zn (OH, corresponding to growth factors of the zinc oxide nanorods. ) 4 2- can be generated.
The growth factors Zn (NH 3 ) 4 2+ and Zn (OH) 4 2- generate zinc oxide nanorods according to Schemes 1 and 2, respectively.
[Reaction Scheme 1]
Zn (NH 3) 4 2+ + 2OH - → ZnO + 4 NH 3 + H 2 O
[Reaction Scheme 2]
Zn (OH) 4 2- → ZnO + H 2 O + 2OH -
Meanwhile, OH − contained in the culture solution may corrode zinc oxide to generate a Zn (OH) 2 corrosive as shown in Scheme 3 below. Is generated.
The zinc salt is selected from zinc nitrate, zinc acetate, zinc oxide, zinc oxide, zinc chloride, zinc sulfate, and zinc hydroxide. One or more compounds may be used, preferably zinc nitrate. In addition, the precipitant may be used at least one compound selected from diethylenetriamine, hexamethylenetetraamine, NH 4 OH, NaOH and KOH, preferably diethylenetriamine, NH 4 OH.
In addition, the precipitant is preferably used in a ratio of 0.1 to 10 moles with respect to 1 mole of zinc salt, and more preferably may be used in a ratio of 0.5 to 5 moles, but is not limited thereto. By adjusting the height, thickness, etc. of the nanorods can be adjusted.
Ion is low - the other hand it is preferred that pH is adjusted to 7.5 ~ 10 range of the culture solution, pH will not exceed 10, and may result in damage to the zinc nanorods oxidation due to the widow formula, pH is equal OH is less than 7.5 There is a problem that the formation of the nanorod is not well made.
The hydrothermal reaction is made by applying the reaction heat, it can be made in the temperature range of 60 ~ 120 ℃ at atmospheric pressure, it is preferable to proceed for 1 to 2 hours.
Hereinafter, the nitride semiconductor light emitting device of the present invention will be described in more detail with reference to the following Preparation Examples of the present invention.
Example : ZnO Nano rod formed GaN Manufacture of nitride light emitting device
GaN was applied to each layer for forming the nitride-based light emitting device as shown in FIG. 1, and the transparent conductive layer was formed of indium tin oxide (ITO). A photoresist pattern having a plurality of holes (diameter about 1 nm to 10 μm) in the transparent conductive layer was formed by using nanoimprinting.
Next, while keeping the temperature of the thermostat at 70 ° C, 0.025 mol of Zn (NO 3 ) 2 .6H 2 O and 0.025 mol of diethylenetriamine were added to water to prepare a culture solution (pH 9.0).
A device having a transparent conductive layer having a hole formed in the culture solution was immersed and reacted at 90 ° C. for 2 hours to grow zinc oxide nanorods.
The SEM photograph of the grown zinc oxide nanorods is shown in FIG. 3, and as shown in the SEM photographs, it was confirmed that the zinc oxide nanorods were formed at about 2.0 times the thickness of the ITO layer.
Experimental Example : Comparison of Luminous Efficiency
The light emission output in the upper direction was measured at 20 mA, and a light emitting device without growing zinc oxide nanorods was used as a comparative example in order to compare the light emitting efficiency of the light emitting device of the above embodiment. The measurement results are shown in Table 1 below.
As shown in Table 1, the light emitting device of the example in which the zinc oxide nanorods were formed in the transparent conductive layer was confirmed to have improved light output characteristics by about 6% or more as compared with the comparative example.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. . Accordingly, the true scope of the present invention should be determined by the following claims.
100 semiconductor
120: buffer layer 130: n-type nitride layer
140: active layer 150: p-type nitride layer
160: transparent electrode layer 170: p-side electrode
180: n-side electrode 190: zinc oxide nano rod
Claims (10)
An active layer formed on the first nitride semiconductor layer;
A second nitride semiconductor layer formed on the active layer and doped with a second conductivity type impurity; And
A transparent conductive layer formed on the second nitride semiconductor layer and having at least one hole formed therein;
A nitride semiconductor light emitting device comprising a zinc oxide nanorod (ZnO nanorod) grown in the hole.
The height of the zinc oxide nanorods is a nitride semiconductor light emitting device, characterized in that 1.0 to 3.0 times the thickness of the transparent conductive layer.
The hole penetrates the transparent conductive layer and exposes a part of the second nitride semiconductor layer.
And a ratio (A / B) of the total hole area A to the cross-sectional area B of the transparent conductive layer is in the range of 0.05 to 0.5.
Etching the transparent conductive layer to form holes; and
A method of manufacturing a nitride semiconductor light emitting device comprising growing a zinc oxide nanorod (ZnO nanorod) in the hole.
The zinc oxide nanorods are grown by hydrothermal synthesis method.
A method for manufacturing a nitride light emitting device comprising growing a zinc oxide-based nanorod in a hole by dipping a device having a hole in a transparent conductive layer in a culture solution containing a zinc salt and a precipitant.
The zinc salt is selected from zinc nitrate, zinc acetate, zinc oxide, zinc oxide, zinc chloride, zinc sulfate, and zinc hydroxide. A method for producing a nitride light emitting device, characterized in that at least one compound.
The precipitant is a method of manufacturing a nitride light emitting device, characterized in that at least one compound selected from diethylenetriamine, hexamethylenetetraamine, NH 4 OH, NaOH and KOH.
PH of the culture solution is a manufacturing method of the nitride light emitting device, characterized in that in the range of 7.5 ~ 10.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9287444B2 (en) | 2014-03-14 | 2016-03-15 | Samsung Electronics Co., Ltd. | Devices having nitride quantum dot and methods of manufacturing the same |
| KR20160032449A (en) * | 2014-09-16 | 2016-03-24 | 엘지이노텍 주식회사 | Light emitting device and lighting emitting device package |
| KR20230148698A (en) * | 2022-04-18 | 2023-10-25 | 한국광기술원 | Light emitting element and manufacturing method thereof |
-
2011
- 2011-12-29 KR KR1020110146399A patent/KR20130077600A/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9287444B2 (en) | 2014-03-14 | 2016-03-15 | Samsung Electronics Co., Ltd. | Devices having nitride quantum dot and methods of manufacturing the same |
| KR20160032449A (en) * | 2014-09-16 | 2016-03-24 | 엘지이노텍 주식회사 | Light emitting device and lighting emitting device package |
| KR20230148698A (en) * | 2022-04-18 | 2023-10-25 | 한국광기술원 | Light emitting element and manufacturing method thereof |
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