KR101457202B1 - Light emitting diode having the transparent electrode layer with nano rods or nano holes and method of fabricating the same - Google Patents

Light emitting diode having the transparent electrode layer with nano rods or nano holes and method of fabricating the same Download PDF

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KR101457202B1
KR101457202B1 KR1020080062396A KR20080062396A KR101457202B1 KR 101457202 B1 KR101457202 B1 KR 101457202B1 KR 1020080062396 A KR1020080062396 A KR 1020080062396A KR 20080062396 A KR20080062396 A KR 20080062396A KR 101457202 B1 KR101457202 B1 KR 101457202B1
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layer
transparent electrode
nano
electrode layer
forming
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KR1020080062396A
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Korean (ko)
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KR20100002485A (en
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임홍철
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서울바이오시스 주식회사
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Abstract

A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked in this order; A transparent electrode layer including nano-rods or nano-holes formed on the second conductive semiconductor layer; And an electrode pad formed on the transparent electrode layer.

According to the present invention, since the transparent electrode layer includes a plurality of nano-rods or nano-holes, the light generated from the active layer can be emitted to the outside through the transparent electrode layer having a lower refractive index than the conventional one, The light loss in the light emitting diode is reduced and the light efficiency is improved.

Electrode pad, nano-rod, nanohole, AAO, anodic oxidation, semiconductor, LED

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode having a transparent electrode layer including a nano-rod or a nano-hole, and a method of manufacturing the same. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-

The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly, to a light emitting diode having a transparent electrode layer including a nano-rod or a nano-hole fabricated using a bipolar aluminum oxide film, and a method of manufacturing the same.

A light emitting diode which is a typical light emitting element is a photoelectric conversion semiconductor element having a structure in which an N-type semiconductor and a P-type semiconductor are bonded to each other and is configured to emit light by recombination of electrons and holes. A GaN-based light emitting diode is known as such a light emitting diode. The GaN-based light emitting diode is manufactured by sequentially laminating a GaN-based N-type semiconductor layer, an active layer (or light emitting layer), and a P-type semiconductor layer on a substrate made of a material such as sapphire or SiC.

In recent years, high efficiency light emitting diodes are expected to replace fluorescent lamps, and in particular, the efficiency of white light emitting diodes has reached a level similar to that of ordinary fluorescent lamps. However, the efficiency of light emitting diodes is likely to be further improved, and thus continuous improvement in efficiency is further demanded.

Two major approaches have been attempted to improve the efficiency of light emitting diodes. The first is to increase the internal quantum efficiency, which is determined by the crystal quality and the epilayer structure. Secondly, the light generated by the light emitting diode is not emitted to the outside but is internally lost. To increase the light extraction efficiency.

1 is a view for explaining a light emitting diode according to the prior art.

1, a conventional light emitting diode includes a substrate 1 constituting a base. On the substrate 1, a buffer layer 2, an N-type semiconductor layer 3, an active layer 4, a P- An N electrode pad 7 is formed on a part of the N-type semiconductor layer 3 and a P electrode pad 8 is formed on the transparent electrode layer 6. The transparent electrode layer 6 is formed on the transparent electrode layer 6,

On the other hand, the refractive index of air is 1.0 while the passivation layer such as SiO 2 , which is currently used in the manufacture of light emitting diodes, has a refractive index of 1.45. Therefore, when light generated in the light emitting diode exits into the air, internal reflection occurs when the light has a value equal to or greater than a critical angle, resulting in a decrease in light efficiency.

In the conventional light emitting diode, when light is generated, the light is not emitted to the outside but is internally lost. Therefore, in order to increase the light efficiency of the light emitting diode, it is necessary that light generated in the light emitting diode is emitted to the outside as much as possible without being lost inside the semiconductor.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned needs, and it is an object of the present invention to provide a light emitting diode which can emit light efficiently through a transparent electrode layer, To increase the amount of light.

According to an aspect of the present invention, there is provided a semiconductor light emitting device including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, A transparent electrode layer including nano-rods or nano-holes formed on the second conductive semiconductor layer; And an electrode pad formed on the transparent electrode layer.

Preferably, the transparent electrode layer is formed by depositing a material for forming a transparent electrode layer on a plurality of nanoholes formed in an anode aluminum oxide (AAO) layer and growing the nano-rods.

Preferably, the material for forming the transparent electrode layer may be at least one of metal or metal oxides of Ni / Au, ITO, or ZnO.

Preferably, the transparent electrode layer is formed with a plurality of nano holes corresponding to a plurality of nano holes formed in the anode aluminum oxide layer through etching using an anode aluminum oxide (AAO) as a mask.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor light emitting device, comprising: sequentially epitaxially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate; And forming a transparent electrode layer including a nano-rod or a nano-hole on the second conductive type semiconductor layer.

The forming of the transparent electrode layer may include: forming an anode aluminum oxide (AAO) layer having a plurality of nano holes on the second conductive semiconductor layer; And depositing a material for forming the transparent electrode layer on a plurality of nanoholes formed in the anode aluminum oxide layer to grow the nano-rods.

Preferably, the forming of the transparent electrode layer includes: depositing a material for forming the transparent electrode layer on the second conductive type semiconductor layer; Forming an anode aluminum oxide (AAO) layer having a plurality of nano holes on the transparent electrode layer; And forming a plurality of the nanoholes corresponding to the plurality of nanoholes formed in the anode aluminum oxide layer in the transparent electrode layer through etching using the anode aluminum oxide layer as a mask.

Preferably, the step of forming the anode aluminum oxide layer includes the steps of: forming an aluminum layer on the transparent electrode layer; performing anodization to form an anode aluminum oxide layer having a plurality of nano holes formed therein; AAO). ≪ / RTI >

Preferably, the material for forming the transparent electrode layer may be at least one of metal or metal oxides of Ni / Au, ITO, or ZnO.

According to the present invention, since the transparent electrode layer includes a plurality of nano-rods or nano-holes, it has a lower refractive index than a transparent electrode layer that does not have a nano-rod or nano-hole in the related art, So that the amount of light reflected into the light emitting diode is reduced, so that the light loss in the light emitting diode is reduced and the light efficiency is improved.

2 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.

2, a light emitting diode according to an exemplary embodiment of the present invention includes a substrate 100 forming a base, and an N-type semiconductor layer 220, an active layer 240, and a P- The light emitting cells 200 including the light emitting cells 260 are formed.

Although the light emitting diode of this embodiment includes one light emitting cell, a light emitting diode including a plurality of light emitting cells and being capable of being operated by an AC power source is also within the scope of the present invention. In the light emitting cell, a portion of the N-type semiconductor layer 220 is exposed upward by mesa formation, and an N-type electrode pad 330 having a plurality of nano rods is formed at the exposed portion. Although the substrate 100 is preferably made of a sapphire material, it may be made of another material such as SiC having a higher thermal conductivity than the sapphire material.

The active layer 240 is formed on a part of the N-type semiconductor layer 220 by the mesa formation and the P-type semiconductor layer 260 is formed on the active layer 240. Therefore, a part of the top surface of the N-type semiconductor layer 220 is bonded to the active layer 240, and the remaining part of the top surface is exposed to the outside. In this embodiment, a part of the N-type semiconductor layer 220 is partially removed to form the N-type electrode pad. However, the vertical type light emitting diode having the substrate below the N-type semiconductor layer 220 removed may also be used in the present invention Lt; / RTI >

The N-type semiconductor layer 220 may be formed of N-type Al x In y Ga 1-xy N (0? X, y, x + y? 1) and may include an N-type cladding layer. The P-type semiconductor layer 260 may be formed of P-type Al x In y Ga 1-xy N (0? X, y, x + y? 1) and may include a P-type clad layer. The N-type semiconductor layer 220 is formed by doping silicon (Si) as a dopant. The P-type semiconductor layer 260 may be formed by adding a dopant such as zinc (Zn) or magnesium (Mg), for example.

A transparent electrode layer 320 made of a metal or a metal oxide such as Ni / Au, ITO, or ZnO is formed on the upper surface of the P-type semiconductor layer 260. A P electrode pad 340 are formed.

The transparent electrode layer 320 is formed of a metal or metal oxide such as Ni / Au, ITO, or ZnO in the form of a plurality of nano-rods. Since the transparent electrode layer 320 has a plurality of nanorods, the refractive index of the transparent electrode layer 320 is relatively lower than when the transparent electrode layer 320 is filled with metal or metal oxides. That is, the refractive index of the transparent electrode layer 320 depends on the refractive index of the air and the refractive index of Ni / Au, ITO, ZnO, or the like as the index of refraction of air between the nano- Of the refractive index of the metal or metal oxide. Accordingly, the light generated from the active layer 240 can be more effectively emitted to the outside through the transparent electrode layer 320 including the nano-rod.

The active layer 240 is a region where electrons and holes are recombined, and includes InGaN. The light emission wavelength extracted from the light emitting cell 200 is determined according to the kind of the material of the active layer 240. The active layer 240 may be a multi-layered film in which a quantum well layer and a barrier layer are repeatedly formed. The barrier layer and the well layer may be two-membered to quaternary compound semiconductor layers represented by the general formula Al x In y Ga 1-xy N (0? X, y, x + y?

In addition, a buffer layer 210 may be interposed between the substrate 100 and the N-type semiconductor layer 220. The buffer layer 210 is used to mitigate lattice mismatch between the semiconductor layers to be formed thereon and the substrate 100. In addition, when the substrate 100 is conductive, the buffer layer 210 is formed of an insulating material or a semi-insulating material to electrically isolate the substrate 100 from the light emitting cells 200. The buffer layer 210 may be formed of a nitride such as AlN or GaN. On the other hand, when the substrate 100 is insulating like sapphire, the buffer layer 210 may be formed of a conductive material.

FIGS. 3 to 6 are cross-sectional views illustrating a process for fabricating a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 3, a buffer layer 210 is formed on a substrate 100, and an N-type semiconductor layer 220, an active layer 240, and a P-type semiconductor layer 260 are formed on a buffer layer 210. The buffer layer 210 and the N-type semiconductor layer 220 are preferably formed by metalorganic chemical vapor deposition (MOCVD), but may be formed using molecular beam growth (MBE) or hydride vapor phase growth (HVPE) have.

In particular, the N-type semiconductor layer 220 is formed by adding Si dopant and grown in the vertical direction on the substrate 100 on which the buffer layer 210 is formed. An N-type semiconductor layer is grown on the substrate through metal organic chemical vapor deposition (MOCVD).

The P-type semiconductor layer 260 is doped with a P-type dopant such as zinc (Zn) or magnesium (Mg).

Next, a process of forming a mesa to expose a part of the N-type semiconductor layer 220 is performed.

Thereafter, an anode aluminum oxide (AAO) 20 having a plurality of nano holes is formed on the upper surface of the P-type semiconductor layer 260. At this time, the exposed N-type semiconductor layer 220 is covered with the photoresist 10.

The anode aluminum oxide layer 20 has a plurality of nano holes 21 as shown in FIG.

The anode aluminum oxide layer 20 may be an already formed one, or may be formed through an anodic oxidation process after aluminum is deposited on the P-type semiconductor layer 260.

The step of depositing the aluminum layer by using a known deposition method such as a thermal evaporator, an ion beam evaporator, a sputtering method, a laser evaporator, or the like using high purity aluminum (99.999% Al) with a thickness of 500 nm or more and 3 micrometers or less . After the deposition of the aluminum layer 20, heat treatment is performed at 300 to 500 ° C in an atmosphere of vacuum, nitrogen, argon or the like. It is needless to say that the heat treatment process for the aluminum layer may be omitted.

After the aluminum layer is deposited, an aluminum anodic aluminum oxide (AAO) layer having a plurality of nano holes 21 is formed by anodizing at least one time.

The process of forming a positive electrode aluminum oxide layer (AAO) having a plurality of nano holes through anodization in an aluminum layer will be described in more detail. First, the aluminum layer is subjected to first anodization.

Here, the anodic oxidation treatment means that an aluminum layer is immersed in an acid solution, and a bias is applied to the light emitting structure.

The acid solution may be any one selected from the group consisting of phosphoric acid, oxalic acid and sulfuric acid.

After the first anodizing treatment, the aluminum layer 20 is oxidized from the surface to the inside by electrochemical reaction and regular valleys are formed from the surface toward the inside.

Next, the portion oxidized by the primary anodizing treatment is removed with a solution mixed with an etchant, for example, phosphoric acid and chromic acid. When the oxidized portion of the aluminum layer 20 is removed, the surface of the aluminum layer 20 remaining corresponding to the valleys formed in the first anodization process has a large number of valleys.

Thereafter, the aluminum layer remaining in the acid solution is subjected to a secondary anodization treatment to form holes at positions corresponding to the cores formed in the first anodization treatment.

The aluminum oxide layer having a plurality of nanoholes may be formed only by the primary anodizing process, but the remaining processes after the primary anodizing process described above may be omitted. Alternatively, the anodic oxidation process may be repeated three or more times by the above-described method. The size of the hole may vary depending on the applied voltage and the acidic solution applied.

On the other hand, the hole size of the anode aluminum oxide (AAO) can be controlled by controlling the applied voltage, the aqueous solution and the application time of the anodizing process. The diameter of the anode aluminum oxide (AAO) hole may be enlarged with the lapse of time while the bias is applied by immersing in oxalic acid applied as an acidic solution.

Referring to FIG. 5, a metal such as ITO is deposited on the anode aluminum oxide layer 20 having a plurality of nano holes 21 to form a transparent electrode layer. In addition, Ni / Au and ZnO may be used. At this time, the deposition can be performed using electron beam or thermal evaporation.

When the metal for the transparent electrode layer is deposited, metal for the transparent electrode layer 320 is filled in each of the nanoholes 21 of the anode aluminum oxide (AAO) 20 and grown as a nano-rod.

Thus, when the photoresist layer 10 and the remaining anode aluminum oxide layer 20 are removed, only the transparent electrode layer 320 of ITO grown by nano-rods remains on the P-type semiconductor layer 260. Thereafter, a P electrode pad 340 is formed on the transparent electrode layer 320 and an N electrode 330 is formed on the exposed N-type semiconductor layer 220 to complete the light emitting diode shown in FIG.

7 is a cross-sectional view illustrating a light emitting diode according to another embodiment of the present invention.

7, a light emitting diode according to an exemplary embodiment of the present invention includes a substrate 100 forming a base, and an N-type semiconductor layer 220, an active layer 240, and a P- And a transparent electrode layer 320 is formed on the P-type semiconductor layer 260. The transparent electrode layer 320 is formed on the P- The light emitting diode according to another embodiment of the present invention has been modified in the structure and manufacturing method of the transparent electrode layer 320 as compared with the light emitting diode according to the embodiment of the present invention described in FIGS. 2 to 6, The description of the structure and operation thereof will be omitted, and the transparent electrode layer 320 will be mainly described.

A transparent electrode layer 320 made of metal or metal oxide such as Ni / Au, ITO, or ZnO is formed on the upper surface of the P-type semiconductor layer 260. A P-type electrode pad 340 Is formed.

The transparent electrode layer 320 is formed of a metal or metal oxide such as Ni / Au, ITO, or ZnO having a plurality of nano holes. Since the transparent electrode layer 320 has a plurality of nano holes, the refractive index of the transparent electrode layer 320 is relatively lower than that of the transparent electrode layer 320 when the transparent electrode layer 320 is filled with metal or metal oxides. That is, the refractive index of the transparent electrode layer 320 depends on the refractive index of the air and the metal such as Ni / Au, ITO, ZnO, or the like, depending on whether the refractive index of the void space occupied by the nanoholes constituting the transparent electrode layer 320 is the refractive index of air. The average refractive index of the metal oxide is obtained. Accordingly, the light generated from the active layer 240 can be more effectively emitted to the outside through the transparent electrode layer 320 including the nano-rod.

8 to 10 are cross-sectional views illustrating a process of fabricating a light emitting diode according to another embodiment of the present invention shown in FIG.

8, a buffer layer 210 is formed on a substrate 100, and an N-type semiconductor layer 220, an active layer 240, and a P-type semiconductor layer 260 are formed on a buffer layer 210. The buffer layer 210 and the N-type semiconductor layer 220 are preferably formed by metalorganic chemical vapor deposition (MOCVD), but may be formed using molecular beam growth (MBE) or hydride vapor phase growth (HVPE) have.

In particular, the N-type semiconductor layer 220 is formed by adding Si dopant and grown in the vertical direction on the substrate 100 on which the buffer layer 210 is formed. An N-type semiconductor layer is grown on the substrate through metal organic chemical vapor deposition (MOCVD).

The P-type semiconductor layer 260 is doped with a P-type dopant such as zinc (Zn) or magnesium (Mg).

Next, a process of forming a mesa to expose a part of the N-type semiconductor layer 220 is performed.

Then, a transparent electrode layer 320 is formed on the P-type semiconductor layer 260 by vapor deposition. The transparent electrode layer 320 may be formed of ITO, Ni / Au, ZnO, or the like. At this time, the deposition can be performed using electron beam or thermal evaporation.

Next, an anode aluminum oxide (AAO) 20 having a plurality of nano holes is formed on the transparent electrode layer 320. At this time, the exposed N-type semiconductor layer 220 is covered with the photoresist 10.

The anode aluminum oxide layer 20 has a plurality of nano holes 21 as shown in FIG.

The anode aluminum oxide layer 20 may be formed using an already formed anode electrode, may be formed through an anodic oxidation process after aluminum is deposited on the transparent electrode layer 320.

Referring to FIG. 9, the transparent electrode layer 320 is etched using the anode aluminum oxide layer 20 as a mask. When the etching is performed, a plurality of nano holes corresponding to a plurality of nano holes formed in the anode aluminum oxide layer are formed in the transparent electrode layer 320.

Thereafter, when the photoresist layer 10 and the remaining anode aluminum oxide layer 20 are removed, only the transparent electrode layer 320 of ITO in which nano holes are formed remains on the P-type semiconductor layer 260. Thereafter, a P electrode pad 340 is formed on the transparent electrode layer 320 and an N electrode 330 is formed on the exposed N-type semiconductor layer 220, thereby completing the light emitting diode shown in FIG.

The invention being thus described, it will be obvious that the same way may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention as defined by the appended claims.

For example, in an embodiment of the present invention, a bonding light emitting diode in which a P-electrode pad and an N-electrode pad are positioned above a semiconductor layer has been described as an example. However, in a vertical light emitting diode in which an upper electrode and a lower electrode are formed, Is formed using AAO to include a nano-rod or a nano-hole.

1 is a view for explaining a light emitting diode according to the prior art.

2 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.

FIGS. 3 to 6 are cross-sectional views illustrating a process for fabricating a light emitting diode according to an embodiment of the present invention.

7 is a cross-sectional view illustrating a light emitting diode according to another embodiment of the present invention.

8 to 10 are cross-sectional views illustrating a process of fabricating a light emitting diode according to another embodiment of the present invention shown in FIG.

Claims (13)

A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked in this order; A transparent electrode layer including a nano-rod formed on the second conductive semiconductor layer; And And an electrode pad formed on the transparent electrode layer. The method according to claim 1, Wherein the transparent electrode layer A light emitting diode formed by depositing a material for forming a transparent electrode layer on a plurality of nanoholes formed in an anode aluminum oxide (AAO) and growing the nano-rods. The method of claim 2, The material for forming the transparent electrode layer may include, Ni / Au, ITO, or ZnO, or metal oxides. delete Epitaxially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially on a substrate; And And forming a transparent electrode layer including nano-rods on the second conductive type semiconductor layer. The method of claim 5, Wherein forming the transparent electrode layer comprises: Forming an anode aluminum oxide (AAO) layer having a plurality of nano holes on the second conductive semiconductor layer; And depositing a material for forming the transparent electrode layer on a plurality of nanoholes formed in the anode aluminum oxide layer to grow the nano-rods. delete The method of claim 6, Wherein the step of forming the anode aluminum oxide layer comprises: Forming an aluminum layer; And anodizing the aluminum layer to form an aluminum oxide layer (AAO) including a plurality of nano holes, Wherein the anodizing treatment is performed at least once or more. The method of claim 8, Wherein the aluminum layer is formed to a thickness of 500 nm to 3 占 퐉 by a deposition method using a thermal evaporator, an ion beam evaporator, a sputter, or a laser evaporator. The method of claim 8, Wherein the step of forming the anode aluminum oxide layer comprises: Further comprising the step of heat treating the aluminum layer at a temperature of 300 to 500 占 폚 in a vacuum, nitrogen, or argon atmosphere after the step of forming the aluminum layer. The method of claim 8, The step of anodizing the aluminum layer to form an aluminum oxide layer (AAO) including a plurality of nano holes, Partially anodizing the aluminum layer; Removing the oxidized portion by the primary anodizing treatment to form a plurality of valleys in the aluminum layer; And forming a plurality of nanoholes at positions corresponding to the plurality of bones by performing a secondary anodization treatment on the plurality of the formed brittle aluminum layers. The method of claim 11, The anodizing treatment of the aluminum layer may be carried out, Immersing the aluminum layer in an acidic solution and applying a bias to the aluminum layer, Wherein the acid solution is phosphoric acid, oxalic acid, or a sulfuric acid solution. The method of claim 6, The material for forming the transparent electrode layer may include, Ni / Au, ITO, or ZnO, or metal oxides.
KR1020080062396A 2008-06-30 2008-06-30 Light emitting diode having the transparent electrode layer with nano rods or nano holes and method of fabricating the same KR101457202B1 (en)

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KR101081129B1 (en) 2009-11-30 2011-11-07 엘지이노텍 주식회사 Light emitting device and fabrication method thereof
WO2012026695A2 (en) 2010-08-27 2012-03-01 Seoul Opto Device Co., Ltd. Light emitting diode with improved luminous efficiency
KR101239848B1 (en) * 2010-12-28 2013-03-06 한국기계연구원 A Manufacturing Method of Light emission Diode
KR102118907B1 (en) * 2018-09-07 2020-06-05 한양대학교 산학협력단 Light emitting diode and fabricating method thereof
DE102022102362A1 (en) * 2022-02-01 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

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KR100672077B1 (en) * 2004-11-05 2007-01-19 광주과학기술원 Method of manufacturing light emitting device

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