KR101457202B1 - Light emitting diode having the transparent electrode layer with nano rods or nano holes and method of fabricating the same - Google Patents
Light emitting diode having the transparent electrode layer with nano rods or nano holes and method of fabricating the same Download PDFInfo
- Publication number
- KR101457202B1 KR101457202B1 KR1020080062396A KR20080062396A KR101457202B1 KR 101457202 B1 KR101457202 B1 KR 101457202B1 KR 1020080062396 A KR1020080062396 A KR 1020080062396A KR 20080062396 A KR20080062396 A KR 20080062396A KR 101457202 B1 KR101457202 B1 KR 101457202B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- transparent electrode
- nano
- electrode layer
- forming
- Prior art date
Links
Images
Abstract
A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked in this order; A transparent electrode layer including nano-rods or nano-holes formed on the second conductive semiconductor layer; And an electrode pad formed on the transparent electrode layer.
According to the present invention, since the transparent electrode layer includes a plurality of nano-rods or nano-holes, the light generated from the active layer can be emitted to the outside through the transparent electrode layer having a lower refractive index than the conventional one, The light loss in the light emitting diode is reduced and the light efficiency is improved.
Electrode pad, nano-rod, nanohole, AAO, anodic oxidation, semiconductor, LED
Description
The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly, to a light emitting diode having a transparent electrode layer including a nano-rod or a nano-hole fabricated using a bipolar aluminum oxide film, and a method of manufacturing the same.
A light emitting diode which is a typical light emitting element is a photoelectric conversion semiconductor element having a structure in which an N-type semiconductor and a P-type semiconductor are bonded to each other and is configured to emit light by recombination of electrons and holes. A GaN-based light emitting diode is known as such a light emitting diode. The GaN-based light emitting diode is manufactured by sequentially laminating a GaN-based N-type semiconductor layer, an active layer (or light emitting layer), and a P-type semiconductor layer on a substrate made of a material such as sapphire or SiC.
In recent years, high efficiency light emitting diodes are expected to replace fluorescent lamps, and in particular, the efficiency of white light emitting diodes has reached a level similar to that of ordinary fluorescent lamps. However, the efficiency of light emitting diodes is likely to be further improved, and thus continuous improvement in efficiency is further demanded.
Two major approaches have been attempted to improve the efficiency of light emitting diodes. The first is to increase the internal quantum efficiency, which is determined by the crystal quality and the epilayer structure. Secondly, the light generated by the light emitting diode is not emitted to the outside but is internally lost. To increase the light extraction efficiency.
1 is a view for explaining a light emitting diode according to the prior art.
1, a conventional light emitting diode includes a
On the other hand, the refractive index of air is 1.0 while the passivation layer such as SiO 2 , which is currently used in the manufacture of light emitting diodes, has a refractive index of 1.45. Therefore, when light generated in the light emitting diode exits into the air, internal reflection occurs when the light has a value equal to or greater than a critical angle, resulting in a decrease in light efficiency.
In the conventional light emitting diode, when light is generated, the light is not emitted to the outside but is internally lost. Therefore, in order to increase the light efficiency of the light emitting diode, it is necessary that light generated in the light emitting diode is emitted to the outside as much as possible without being lost inside the semiconductor.
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned needs, and it is an object of the present invention to provide a light emitting diode which can emit light efficiently through a transparent electrode layer, To increase the amount of light.
According to an aspect of the present invention, there is provided a semiconductor light emitting device including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, A transparent electrode layer including nano-rods or nano-holes formed on the second conductive semiconductor layer; And an electrode pad formed on the transparent electrode layer.
Preferably, the transparent electrode layer is formed by depositing a material for forming a transparent electrode layer on a plurality of nanoholes formed in an anode aluminum oxide (AAO) layer and growing the nano-rods.
Preferably, the material for forming the transparent electrode layer may be at least one of metal or metal oxides of Ni / Au, ITO, or ZnO.
Preferably, the transparent electrode layer is formed with a plurality of nano holes corresponding to a plurality of nano holes formed in the anode aluminum oxide layer through etching using an anode aluminum oxide (AAO) as a mask.
According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor light emitting device, comprising: sequentially epitaxially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate; And forming a transparent electrode layer including a nano-rod or a nano-hole on the second conductive type semiconductor layer.
The forming of the transparent electrode layer may include: forming an anode aluminum oxide (AAO) layer having a plurality of nano holes on the second conductive semiconductor layer; And depositing a material for forming the transparent electrode layer on a plurality of nanoholes formed in the anode aluminum oxide layer to grow the nano-rods.
Preferably, the forming of the transparent electrode layer includes: depositing a material for forming the transparent electrode layer on the second conductive type semiconductor layer; Forming an anode aluminum oxide (AAO) layer having a plurality of nano holes on the transparent electrode layer; And forming a plurality of the nanoholes corresponding to the plurality of nanoholes formed in the anode aluminum oxide layer in the transparent electrode layer through etching using the anode aluminum oxide layer as a mask.
Preferably, the step of forming the anode aluminum oxide layer includes the steps of: forming an aluminum layer on the transparent electrode layer; performing anodization to form an anode aluminum oxide layer having a plurality of nano holes formed therein; AAO). ≪ / RTI >
Preferably, the material for forming the transparent electrode layer may be at least one of metal or metal oxides of Ni / Au, ITO, or ZnO.
According to the present invention, since the transparent electrode layer includes a plurality of nano-rods or nano-holes, it has a lower refractive index than a transparent electrode layer that does not have a nano-rod or nano-hole in the related art, So that the amount of light reflected into the light emitting diode is reduced, so that the light loss in the light emitting diode is reduced and the light efficiency is improved.
2 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
2, a light emitting diode according to an exemplary embodiment of the present invention includes a
Although the light emitting diode of this embodiment includes one light emitting cell, a light emitting diode including a plurality of light emitting cells and being capable of being operated by an AC power source is also within the scope of the present invention. In the light emitting cell, a portion of the N-
The
The N-
A
The
The
In addition, a
FIGS. 3 to 6 are cross-sectional views illustrating a process for fabricating a light emitting diode according to an embodiment of the present invention.
Referring to FIG. 3, a
In particular, the N-
The P-
Next, a process of forming a mesa to expose a part of the N-
Thereafter, an anode aluminum oxide (AAO) 20 having a plurality of nano holes is formed on the upper surface of the P-
The anode
The anode
The step of depositing the aluminum layer by using a known deposition method such as a thermal evaporator, an ion beam evaporator, a sputtering method, a laser evaporator, or the like using high purity aluminum (99.999% Al) with a thickness of 500 nm or more and 3 micrometers or less . After the deposition of the
After the aluminum layer is deposited, an aluminum anodic aluminum oxide (AAO) layer having a plurality of nano holes 21 is formed by anodizing at least one time.
The process of forming a positive electrode aluminum oxide layer (AAO) having a plurality of nano holes through anodization in an aluminum layer will be described in more detail. First, the aluminum layer is subjected to first anodization.
Here, the anodic oxidation treatment means that an aluminum layer is immersed in an acid solution, and a bias is applied to the light emitting structure.
The acid solution may be any one selected from the group consisting of phosphoric acid, oxalic acid and sulfuric acid.
After the first anodizing treatment, the
Next, the portion oxidized by the primary anodizing treatment is removed with a solution mixed with an etchant, for example, phosphoric acid and chromic acid. When the oxidized portion of the
Thereafter, the aluminum layer remaining in the acid solution is subjected to a secondary anodization treatment to form holes at positions corresponding to the cores formed in the first anodization treatment.
The aluminum oxide layer having a plurality of nanoholes may be formed only by the primary anodizing process, but the remaining processes after the primary anodizing process described above may be omitted. Alternatively, the anodic oxidation process may be repeated three or more times by the above-described method. The size of the hole may vary depending on the applied voltage and the acidic solution applied.
On the other hand, the hole size of the anode aluminum oxide (AAO) can be controlled by controlling the applied voltage, the aqueous solution and the application time of the anodizing process. The diameter of the anode aluminum oxide (AAO) hole may be enlarged with the lapse of time while the bias is applied by immersing in oxalic acid applied as an acidic solution.
Referring to FIG. 5, a metal such as ITO is deposited on the anode
When the metal for the transparent electrode layer is deposited, metal for the
Thus, when the
7 is a cross-sectional view illustrating a light emitting diode according to another embodiment of the present invention.
7, a light emitting diode according to an exemplary embodiment of the present invention includes a
A
The
8 to 10 are cross-sectional views illustrating a process of fabricating a light emitting diode according to another embodiment of the present invention shown in FIG.
8, a
In particular, the N-
The P-
Next, a process of forming a mesa to expose a part of the N-
Then, a
Next, an anode aluminum oxide (AAO) 20 having a plurality of nano holes is formed on the
The anode
The anode
Referring to FIG. 9, the
Thereafter, when the
The invention being thus described, it will be obvious that the same way may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention as defined by the appended claims.
For example, in an embodiment of the present invention, a bonding light emitting diode in which a P-electrode pad and an N-electrode pad are positioned above a semiconductor layer has been described as an example. However, in a vertical light emitting diode in which an upper electrode and a lower electrode are formed, Is formed using AAO to include a nano-rod or a nano-hole.
1 is a view for explaining a light emitting diode according to the prior art.
2 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
FIGS. 3 to 6 are cross-sectional views illustrating a process for fabricating a light emitting diode according to an embodiment of the present invention.
7 is a cross-sectional view illustrating a light emitting diode according to another embodiment of the present invention.
8 to 10 are cross-sectional views illustrating a process of fabricating a light emitting diode according to another embodiment of the present invention shown in FIG.
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080062396A KR101457202B1 (en) | 2008-06-30 | 2008-06-30 | Light emitting diode having the transparent electrode layer with nano rods or nano holes and method of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080062396A KR101457202B1 (en) | 2008-06-30 | 2008-06-30 | Light emitting diode having the transparent electrode layer with nano rods or nano holes and method of fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100002485A KR20100002485A (en) | 2010-01-07 |
KR101457202B1 true KR101457202B1 (en) | 2014-11-03 |
Family
ID=41812514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080062396A KR101457202B1 (en) | 2008-06-30 | 2008-06-30 | Light emitting diode having the transparent electrode layer with nano rods or nano holes and method of fabricating the same |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101457202B1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101081129B1 (en) | 2009-11-30 | 2011-11-07 | 엘지이노텍 주식회사 | Light emitting device and fabrication method thereof |
WO2012026695A2 (en) | 2010-08-27 | 2012-03-01 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved luminous efficiency |
KR101239848B1 (en) * | 2010-12-28 | 2013-03-06 | 한국기계연구원 | A Manufacturing Method of Light emission Diode |
KR102118907B1 (en) * | 2018-09-07 | 2020-06-05 | 한양대학교 산학협력단 | Light emitting diode and fabricating method thereof |
DE102022102362A1 (en) * | 2022-02-01 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100672077B1 (en) * | 2004-11-05 | 2007-01-19 | 광주과학기술원 | Method of manufacturing light emitting device |
-
2008
- 2008-06-30 KR KR1020080062396A patent/KR101457202B1/en active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100672077B1 (en) * | 2004-11-05 | 2007-01-19 | 광주과학기술원 | Method of manufacturing light emitting device |
Also Published As
Publication number | Publication date |
---|---|
KR20100002485A (en) | 2010-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7655959B2 (en) | Semiconductor light emitting device having textured structure and method of manufacturing the same | |
US8735185B2 (en) | Light emitting device and fabrication method thereof | |
KR101316120B1 (en) | Fabrication method of light emitting device having scattering center using anodic aluminum oxide and light emitting device thereby | |
US8723188B2 (en) | Light emitting diode and method for preparing the same | |
TWI434433B (en) | Method for fabricating light-emitting diode | |
JP2007221142A (en) | Semiconductor light-emitting device, and method of manufacturing same | |
JP2005244201A (en) | Semiconductor luminous element and manufacturing method of the same | |
KR101457202B1 (en) | Light emitting diode having the transparent electrode layer with nano rods or nano holes and method of fabricating the same | |
WO2020011117A1 (en) | Ultraviolet light emitting diode chip for improving light extraction efficiency, and manufacturing method therefor | |
KR100648812B1 (en) | Galium-nitride light emitting diode and method of fabricating the same | |
JP5165668B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
KR101272707B1 (en) | Light emitting diode having nano wire electrode pad and method of fabricating the light emitting diode thereby | |
KR100810492B1 (en) | VERTICAL TYPE LIGHT EMITTING DIODE WITH ELECTRODE LAYER MADE OF Zn COMPOUND AND METHOD FOR FABRICATING THE SAME | |
KR101136521B1 (en) | Light emitting diode and manufacturing method thereof | |
KR101550200B1 (en) | light-emitting diode including DBR layer pattern and manufacturing method thereof | |
TWI443864B (en) | Fabrication of crystalline structure | |
KR100730752B1 (en) | Compound semiconductor having supper lattice layer and light emitting diode using the same and method for fabricating the ligth emitting diode | |
KR101030071B1 (en) | Semiconductor light emitting device and method for fabricating the same | |
JP2009231745A (en) | Group iii nitride semiconductor light-emitting element, method for manufacturing group iii nitride semiconductor light-emitting element, and lamp | |
KR101243741B1 (en) | Semiconductor light emitting device | |
KR20110037620A (en) | Semiconductor light emitting device | |
KR20120031994A (en) | Light emitting diode and manufacturing method thereof | |
KR20090065053A (en) | Nitride semiconductor light emitting device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20170911 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20180906 Year of fee payment: 5 |