KR20130071592A - Aluminium paste composition and solar cell device using the same - Google Patents
Aluminium paste composition and solar cell device using the same Download PDFInfo
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- KR20130071592A KR20130071592A KR1020110138888A KR20110138888A KR20130071592A KR 20130071592 A KR20130071592 A KR 20130071592A KR 1020110138888 A KR1020110138888 A KR 1020110138888A KR 20110138888 A KR20110138888 A KR 20110138888A KR 20130071592 A KR20130071592 A KR 20130071592A
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- South Korea
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- glass frit
- paste composition
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- aluminum paste
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000000203 mixture Substances 0.000 title claims abstract description 60
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 54
- 239000004411 aluminium Substances 0.000 title description 2
- 239000011521 glass Substances 0.000 claims abstract description 71
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 6
- 239000002952 polymeric resin Substances 0.000 claims description 6
- 229920003002 synthetic resin Polymers 0.000 claims description 6
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 5
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 230000009257 reactivity Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 abstract 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 18
- 238000010304 firing Methods 0.000 description 17
- -1 polyoxyethylene Polymers 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000004695 Polyether sulfone Substances 0.000 description 10
- 229920006393 polyether sulfone Polymers 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 229920000915 polyvinyl chloride Polymers 0.000 description 5
- 239000004800 polyvinyl chloride Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 3
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 229920000056 polyoxyethylene ether Polymers 0.000 description 3
- 229940051841 polyoxyethylene ether Drugs 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- WMDZKDKPYCNCDZ-UHFFFAOYSA-N 2-(2-butoxypropoxy)propan-1-ol Chemical compound CCCCOC(C)COC(C)CO WMDZKDKPYCNCDZ-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 229910020617 PbO—B2O3—SiO2 Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/023—Alloys based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
Description
The present invention relates to an aluminum paste composition and a solar cell device using the same, which are excellent in appearance and can improve durability and efficiency of a solar cell device by suppressing occurrence of bumps on a surface during firing.
Solar cells, which are rapidly spreading in recent years, are electronic devices that directly convert solar energy, which is clean energy, into electricity as a next generation energy source.
In the solar cell element, as shown in FIG. 1, the N +
Among these, the
The aluminum paste composition for forming the
However, the glass frit thermally etches the oxide film on the surface of the aluminum powder of the aluminum layer to increase its reactivity with moisture. In addition, bumps tend to occur on the surface after firing, and it is difficult to obtain electrodes having excellent appearance. As a result, the durability of the solar cell device itself is lowered and the efficiency is lowered.
An object of the present invention is to provide an aluminum paste composition which can suppress the occurrence of bumps on the surface during firing and prevent reactivity with moisture by thermal etching to improve durability and efficiency of the solar cell device.
Another object of the present invention is to provide an electrode formed from the aluminum paste composition.
In addition, another object of the present invention is to provide a solar cell device provided with the electrode.
1. Aluminum powder; BaO-containing PbO-based first glass frit; BaO-containing non-PbO-based second glass frit; BaO-free, non-PbO-based third glass frit; And an organic vehicle.
2. In the above 1, the first glass frit is
3. In the above 1, the second glass frit is 0.1 to 5 mol% Al 2 O 3 , SiO 2 1 to 20 mol%, B 2 O 3 10 to 40 mol%, BaO 0.1 to 10 mol%,
4. In the above 1, the third glass frit is Al 2 O 3 1 to 10 mol%, SiO 2 15 to 25 mol%, B 2 O 3 35 to 45 mol%, Bi 2 O 3 1 to 15 mol% and Aluminum paste composition comprising 10 to 20 mol% ZnO.
5. In the above 1, the mixing ratio of the first glass frit, the second glass frit and the third glass frit is 1: 0.25-1.5: 0.3-1.5 by weight of aluminum paste composition.
6. In the above 1, the aluminum powder is aluminum paste composition containing 60 to 78% by weight.
7. In the above 1, wherein the total glass frit including the first to third glass frit is contained in an aluminum paste composition of 0.01 to 5% by weight.
8. The aluminum paste composition of 1 above, wherein the organic vehicle is contained in 20 to 35% by weight.
9. The aluminum paste composition of 1 above, wherein the organic vehicle is a mixture of 1 to 25% by weight of the polymer resin and 75 to 99% by weight of the organic solvent.
10. The electrode formed of the aluminum paste composition of any one of the above 1 to 9.
11. Solar cell device provided with the electrode of the above 10.
The aluminum paste composition according to the present invention may prevent the reaction with moisture to enhance the durability of the solar cell device itself.
In addition, the paste composition of the present invention suppresses the occurrence of bumps on the surface during firing, and has excellent appearance, less warpage of the silicon wafer substrate, and can increase the maximum output current (Isc) of the solar cell device and improve efficiency. An electrode can be provided.
1 is a diagram schematically illustrating a cross-sectional view of a solar cell element.
The present invention relates to an aluminum powder; BaO-containing PbO-based first glass frit; BaO-containing non-PbO-based second glass frit; BaO-free, non-PbO-based third glass frit; And by including an organic vehicle, it is possible to prevent the reaction with moisture to improve the durability of the solar cell element itself, and to suppress the occurrence of bumps on the surface during firing, the appearance is excellent and the warpage phenomenon of the silicon wafer substrate as well as the sun The present invention relates to an aluminum paste composition capable of providing an electrode capable of increasing a maximum output current (Isc) of a battery device and improving efficiency thereof, and a solar cell device using the same.
Hereinafter, the present invention will be described in detail.
The aluminum paste composition of the present invention is aluminum powder; BaO-containing PbO-based first glass frit; BaO-containing non-PbO-based second glass frit; BaO-free, non-PbO-based third glass frit; And an organic vehicle.
Aluminum powder is a conductive metal that is the main component of the paste composition for forming the back electrode.
The aluminum powder is not particularly limited in average particle size, and may be, for example, 1 to 10 μm.
Aluminum powder is preferably included in 60 to 78% by weight in 100% by weight of the total amount of aluminum paste composition. If the content is less than 60% by weight, the thickness of the printed aluminum rear electrode after firing becomes thin so that the back field (BSF) may not be sufficiently formed and the efficiency may be lowered. When the content is more than 78% by weight, the thickness of the silicon wafer substrate is too thick. May cause warpage.
In the present invention, three kinds of glass frits, namely, a PbO-based first glass frit containing BaO, a non-PbO-based second glass frit containing BaO, and a non-PbO-based third glass frit not containing BaO are used. It is characterized by.
The first glass frit, which is a PbO-based glass frit containing a BaO component, may contain 0.1 to 10 mol% of BaO component, preferably 0.5 to 7 mol%, more preferably 1 to 5 mol%. . If the content is less than 0.5 mol%, it is difficult to sufficiently suppress the generation of bumps on the electrode surface after firing, and if the content is more than 10 mol%, the thermal expansion coefficient may be large to cause warpage of the silicon wafer substrate.
The first glass frit is preferably a PbO-Al 2 O 3 -SiO 2 -B 2 O 3 -TiO 2 -BaO-based oxide, more preferably 30 to 60 mol% of PbO and 1 to 15 mol of Al 2 O 3. %, 20 to 40 mol% SiO 2 , 10 to 30 mol% B 2 O 3 , 0.5 to 5 mol% TiO 2 and 0.1 to 10 mol% BaO.
Further, the first glass frit may contain 0 to 10 mol% of alkali metal oxides such as K 2 O, Na 2 O, Li 2 O, and the like; 0-10 mol% of alkaline earth metal oxides, such as MgO, CaO, and SrO; ZnO 0-15 mol%, V 2 O 5 0-10 mol%; P 2 O 5 0 To 10 mol% may be further included.
The glass transition temperature (Tg) of the first glass frit may be adjusted according to the type of the constituents and their content, and may be, for example, 350 to 500 ° C.
The second glass frit, which is a non-PbO-based glass frit containing a BaO component, is preferably an Al 2 O 3 -SiO 2 -B 2 O 3 -BaO-ZnO-LiO-based oxide, more preferably Al 2 O 3 0.1 To 5 mol%, SiO 2 1 to 20 mol%, B 2 O 3 10 to 40 mol%, BaO 0.1 to 10 mol%,
Further, the second glass frit may contain 0 to 10 mol% of alkali metal oxides such as K 2 O and Na 2 O; 0-10 mol% of alkaline earth metal oxides, such as MgO, CaO, and SrO; V 2 O 5 0-10 mole%; It may further comprise P 2 O 5 0-10 mol%.
The third glass frit, which is a non-PbO-based glass frit containing no BaO component, is preferably an Al 2 O 3 -SiO 2 -B 2 O 3 -Bi 2 O 3 -ZnO-based oxide, more preferably Al 2 O 3 1 to 10 mol%, SiO 2 15 to 25 mol%, B 2 O 3 35 to 45 mol%, Bi 2 O 3 It is preferable to include 1 to 15 mol% and
In addition, the third glass frit may include 0 to 10 mol% of an alkali metal oxide such as Li 2 O, K 2 O, Na 2 O, or the like; 0-10 mol% of alkaline earth metal oxides, such as MgO, CaO, and SrO; V 2 O 5 0-10 mole%; It may further comprise P 2 O 5 0-10 mol%.
The mixing ratio of the first glass frit, the second glass frit and the third glass frit is preferably 1: 0.25-1.5: 0.3-1.5 by weight, more preferably 1: 0.5-1.2: 0.5-1.2, most preferably Is 1: 0.9-1.1: 0.7-1. When the weight ratio is out of the range, that is, for the first glass frit, if the second glass frit is included in a small amount out of the range, there is a problem that the water resistance is lowered and if it is included in an excessive amount, the warpage phenomenon increases. When the glass frit is included in a small amount outside the above range, the efficiency may be lowered. When the glass frit is included in an excessive amount, the warpage phenomenon may increase.
Thus, the glass frit composed of three kinds has advantages of easy melting point control and low coefficient of thermal expansion. In particular, it suppresses the occurrence of bumps on the surface during firing, which improves appearance and prevents water resistance from thermal etching. When applied to the battery element improves durability and improves efficiency.
The total glass frit including the first to third glass frits is preferably contained in an amount of 0.01 to 5% by weight, more preferably 0.05 to 4% by weight in 100% by weight of the total content of the aluminum paste composition. If the content is less than 0.01% by weight, the adhesion between the aluminum back electrode and the silicon wafer substrate may decrease after firing. If the content is more than 5% by weight, the warpage of the silicon wafer substrate may increase, and the resistance may increase, thereby reducing the efficiency of the solar cell device. Can be.
The organic vehicle is a component for imparting consistency and rheological properties suitable for printing to the aluminum paste composition, and may be a solution in which a polymer resin and various additives are dissolved in an organic solvent as necessary.
The organic vehicle may be a mixture of 75 to 99% by weight of the organic solvent and 1 to 25% by weight of the polymer resin, and may be a mixture of 1 to 10% by weight of the additive.
As the organic solvent, a known one may be used, and a solvent having a boiling point of 150 to 300 ° C. may be used to prevent drying of the paste composition and control fluidity during the printing process. Specifically, tripropylene glycol methyl ether, tripropylene glycol n-butyl ether, dipropylene glycol n-propyl ether, dipropylene glycol n-butyl ether, propylene glycol phenyl ether, diethylene glycol ethyl ether, diethylene glycol n-butyl Ether, diethylene glycol hexyl ether, ethylene glycol hexyl ether, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol n-butyl ether, ethylene glycol phenyl ether, ethylene glycol, terpineol, butyl carbitol, butyl Carbitol acetate, 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate (texanol), and the like. These may be used alone or in combination of two or more thereof.
The organic solvent is preferably included in 75 to 99% by weight relative to 100% by weight of the total amount of the organic vehicle. In this content range, optimum fluidity can be imparted to the paste composition.
As the polymer resin, those known in the art may be used, and examples thereof include ethylcellulose, nitrocellulose, hydroxypropylcellulose, phenol, acrylic, rosin, polyvinyl alcohol, polyvinylpyrrolidone, polyethylene glycol, polyvinylbutyral, urea, Butadiene-styrene (ABS), polymethyl methacrylate, polyvinyl chloride, polyvinyl chloride, polyvinyl chloride, polyvinyl chloride, polyvinyl chloride, polyvinylidene chloride, Polyether sulfone, polyether ether ketone, polyether sulfone, polyether sulfone, polysulfone, polyether sulfone, polyether sulfone, polyether sulfone, polyether sulfone, polyether sulfone, polyether sulfone, polyether sulfone, And the like. These can be used individually or in mixture of 2 or more types.
The polymer resin may be included in an amount of 1 to 25% by weight, preferably 5 to 25% by weight, based on 100% by weight of the total amount of the organic vehicle. When the content is less than 1% by weight, the printability and dispersion stability of the paste composition may be lowered, and when the content is more than 25% by weight, the paste composition may not be printed.
The organic vehicle may further comprise a dispersant as an additive together with the above components.
As the dispersant, a known surfactant can be used, for example, polyoxyethylene alkyl ether having 6 to 30 carbon atoms in the alkyl group, polyoxyethylene alkyl aryl ether having 6 to 30 carbon atoms in the alkyl group, and 6 to 30 carbon atoms in the alkyl group. Ethers such as polyoxyethylene-polyoxypropylene alkyl ether; Ester ethers such as glycerin ester addition polyoxyethylene ether, sorbitan ester addition polyoxyethylene ether, and sorbitol ester addition polyoxyethylene ether; Esters such as polyethylene glycol fatty acid ester, glycerin ester, sorbitan ester, propylene glycol ester, sugar ester and alkyl polyglucoside; Nitrogen-containing systems such as fatty acid alkanolamide, polyoxyethylene fatty acid amide, polyoxyethylene alkylamine having 6 to 30 carbon atoms of an alkyl group, and amine oxide; And high molecular compounds such as polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic acid, polyacrylic acid-maleic acid copolymer, and poly12-hydroxystearic acid. Commercially available products include Hypermer KD (Uniqema), AKM 0531 (Japan Oil Holding Co., Ltd.), KP (Shin-Etsu Chemical Co., Ltd.), POLYFLOW (Kyoeisha Chemical Co., Ltd.), EFTOP (Tochem Products), Asahi guard (Asahi Glass, Inc.), Suflon (Asahi Glass, Inc.), SOLSPERSE (Genekka), EFKA (EFKA Chemicals, Inc.) ), PB 821 (Ajinomoto Co., Ltd.), BYK-184, BYK-185, BYK-2160, Anti-Terra U (manufactured by BYK), and the like can also be used. These can be used individually or in mixture of 2 or more types.
The dispersant may be included in an amount of 1 to 10% by weight, preferably 1 to 5% by weight, based on 100% by weight of the total amount of the organic vehicle.
The organic vehicle may further include additives such as thixotropic agents, wetting agents, antioxidants, corrosion inhibitors, antifoaming agents, thickeners, dispersants, tackifiers, coupling agents, antistatic agents, polymerization inhibitors, and antisettling agents.
The organic vehicle is preferably included in 20 to 35% by weight relative to the total content of aluminum paste composition 100% by weight. If the content is less than 20% by weight, the viscosity of the aluminum paste composition may be too high to reduce fluidity and printability.When the content is more than 35% by weight, it is difficult to secure a sufficient thickness of the paste layer due to the relatively low content of aluminum powder. .
The aluminum paste composition comprising the above components can provide an electrode that can suppress bumps on the surface during firing so that the appearance can be excellent, the warpage of the silicon wafer substrate can be reduced, and the water resistance can be prevented. have.
The present invention provides an electrode formed from the aluminum paste composition.
The electrode is formed through a process of printing and drying and firing an aluminum paste composition on a substrate, for example, a silicon wafer substrate on which an Ag front electrode is formed. The printing method is not particularly limited, and for example, screen printing, gravure printing, offset printing or the like can be used. Drying may be carried out at 60 to 300 ° C. for several seconds to several minutes, and firing may be performed at 600 to 950 ° C. for several seconds.
The electrode formed as described above is applied to the rear electrode of the solar cell device, thereby increasing the maximum output current Isc of the solar cell device and ensuring improved efficiency and durability.
The present invention provides a solar cell element provided with an electrode formed from the aluminum paste composition.
Hereinafter, preferred examples are provided to aid the understanding of the present invention, but these examples are merely illustrative of the present invention and are not intended to limit the scope of the appended claims. It is apparent to those skilled in the art that various changes and modifications can be made to the present invention, and such modifications and changes belong to the appended claims.
Example
Manufacturing example 1-4: glass Frit Ⅰ-Ⅳ Manufacturing
Glass frits were prepared with the ingredients and contents as shown in Table 1 below.
[Table 1]
Example One
74 wt% of the aluminum powder having an average particle size of 1-10 μm, 1.5 wt%, 1.5 wt% and 0.5 wt% of the glass frit of Preparation Examples 1, 2 and 3, respectively, and hydroxypropyl to butylcarbitol After adding 22.5% by weight of an organic vehicle in which a cellulose resin was dissolved, an aluminum paste composition was prepared by stirring at 1,000 rpm for 3 minutes using a mixer that simultaneously rotates and rotates.
Example 2-3, Comparative example 1-3
The same procedure as in Example 1, except that the ingredients and contents as shown in Table 2 were used. At this time, the content represents weight%.
[Table 2]
Test Example
The physical properties of the aluminum paste compositions prepared in Examples and Comparative Examples were measured by the following methods, and the results are shown in Table 3 below.
Print and dry bus bars with silver paste composition on the back side of single crystal silicon wafer substrates with a size of 156 mm x 156 mm, thickness 200 m and pyramid structure of about 4-6 m in height by texturing process I was. Thereafter, the prepared aluminum paste composition was applied and dried using a 250 mesh screen printing plate. At this time, the coating amount was set to 1.5 ± 0.1g before drying. The finger lines were then printed and dried using silver paste on the front SiNx side. The substrate subjected to the above process was fired for about 10 seconds in an infrared continuous kiln having a temperature of 720-900 ° C. The firing process is carried out by simultaneous firing front and back while passing the silicon wafer substrate into a belt furnace comprising a burn-out section of about 600 ° C. and a firing section of 800-950 ° C. After removing the organic material in the paste, the aluminum was melted to form an electrode, thereby manufacturing a solar cell device.
(1) water resistance
The prepared solar cell device was placed in a thermostatic chamber filled with distilled water at 80 ° C. and left for 10 minutes. It was observed visually whether hydrogen gas (bubble) was generated by the reaction of the aluminum electrode formed in the thermostat with moisture for the time left to stand, and evaluated based on the following criteria. At this time, when bubbles were generated, the time was also confirmed.
<Evaluation Criteria>
(Circle): No bubble generation (good).
X: Bubble generation (defect).
(2) Bump Count
Bumps and aluminum bubbles generated on the rear aluminum electrode portions of the manufactured solar cell elements were visually observed and the number thereof was measured.
(3) deflection (mm)
The manufactured solar cell device was placed on a flat bottom and four corners were aligned with the bottom, and then the degree of lifting of the center part was measured. Usually, when warping is 1.50 mm or less, it is regarded as a good level.
(4) Efficiency (%)
The efficiency of the manufactured solar cell device was evaluated using an evaluation device (SCM-1000, FitTech).
[Table 3]
As shown in Table 3, the electrode formed by using the aluminum paste composition of Examples 1 to 3 comprising a mixture of three kinds of glass frit according to the present invention is prevented from reacting with moisture and excellent in water resistance of the solar cell device Durability can be improved, and the occurrence of bumps on the surface during the firing was suppressed and the warpage amount was small, so that the appearance was excellent and the efficiency was high when applied to the solar cell device.
On the other hand, Comparative Examples 1 to 3 containing only a part of the first to third glass frits were difficult to satisfy the water resistance, bump suppression, and bending characteristics at the same time. In addition, in the case of the comparative example 4 using the glass frit of the manufacture example IV which manufactured by mixing the 1st glass frit, the 2nd glass frit, and the 3rd glass frit in the weight ratio of 1: 1: 1, it is rather water resistance, bump suppression, and curvature. It is confirmed that the characteristics are inferior to other comparative examples, and the efficiency is also the worst.
10: silicon wafer substrate 20: N + layer
30: antireflection film 40: front electrode
50: P + layer 60: rear electrode
Claims (11)
BaO-containing PbO-based first glass frit;
BaO-containing non-PbO-based second glass frit;
BaO-free, non-PbO-based third glass frit; And
An aluminum paste composition comprising an organic vehicle.
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