KR20130071592A - Aluminium paste composition and solar cell device using the same - Google Patents

Aluminium paste composition and solar cell device using the same Download PDF

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KR20130071592A
KR20130071592A KR1020110138888A KR20110138888A KR20130071592A KR 20130071592 A KR20130071592 A KR 20130071592A KR 1020110138888 A KR1020110138888 A KR 1020110138888A KR 20110138888 A KR20110138888 A KR 20110138888A KR 20130071592 A KR20130071592 A KR 20130071592A
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South Korea
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mol
glass frit
paste composition
bao
aluminum paste
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KR1020110138888A
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Korean (ko)
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최형섭
진영준
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동우 화인켐 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE: An aluminum paste composition is provided to prevent reactivity with moisture due to thermal etching, and to improve durability and efficiency of a solar battery device. CONSTITUTION: An aluminum paste composition includes an aluminum powder; a BaO-containing PbO group-based first glass frit; a BaO-containing non-PbO-based second glass frit: a BaO-free non-PbO-based thid glass frit; and an organic vehicle. The first glass frit includes 30-60 mol% of PbO, 1-15 mol% of Al2O3, 20-40 mol% of SiO2, 10-30 mol% of B2O3, 0.5-5 mol% of TiO2, and 0.1-10 mol% of BaO. The second glass frit includes 0.1-5 mol% of Al2O3, 1-20 mol% of SiO2, 10-40 mol% of B2O3, 0.1-10 mol% of BaO, 20-50 mol% of ZnO, and 0.1-10 mol% of Li2O.

Description

Aluminum paste composition and solar cell device using same {ALUMINIUM PASTE COMPOSITION AND SOLAR CELL DEVICE USING THE SAME}

The present invention relates to an aluminum paste composition and a solar cell device using the same, which are excellent in appearance and can improve durability and efficiency of a solar cell device by suppressing occurrence of bumps on a surface during firing.

Solar cells, which are rapidly spreading in recent years, are electronic devices that directly convert solar energy, which is clean energy, into electricity as a next generation energy source.

In the solar cell element, as shown in FIG. 1, the N + layer 20, the antireflection film 30, and the front electrode 40 are formed on the light receiving surface side of the silicon wafer substrate 10, and the light receiving of the substrate 10 is performed. The P + layer 50 and the back electrode 60 are formed on the opposite side of the surface side. When sunlight shines on a solar cell device having such a structure, electrons (-) and holes (+) are generated inside, and the generated electrons (-) are N + layers 20 and holes (+) are P + layers 50. Will move to each. Due to this phenomenon, a potential difference is generated between the P + layer 50 and the N + layer 20. At this time, the solar energy is converted into electrical energy on the principle that a current is generated when the load is connected.

Among these, the back electrode 60 is formed by applying an aluminum paste composition by screen printing, drying, and then firing the aluminum paste composition. When baking, aluminum is diffused into the silicon wafer substrate 10 so that the back electrode 60 and the substrate 10 are baked. An Al—Si alloy layer is formed therebetween and a P + layer 50 is formed by diffusion of aluminum atoms. The P + layer 50 acts as a back surface field (BSF) that prevents recombination of electrons and improves the collection efficiency of product carriers, and also serves as a reflector reflecting long wavelength light of sunlight.

The aluminum paste composition for forming the back electrode 60 includes aluminum powder, glass frit, and an organic vehicle. Among these, glass frit is a component for further strengthening the bond with the silicon wafer substrate 10 and is usually composed of PbO-B 2 O 3 -SiO 2 type , PbO-B 2 O 3 -Al 2 O 3 type , and PbO- type. Those containing B 2 O 3 -ZnO-based oxides were mainly used.

However, the glass frit thermally etches the oxide film on the surface of the aluminum powder of the aluminum layer to increase its reactivity with moisture. In addition, bumps tend to occur on the surface after firing, and it is difficult to obtain electrodes having excellent appearance. As a result, the durability of the solar cell device itself is lowered and the efficiency is lowered.

An object of the present invention is to provide an aluminum paste composition which can suppress the occurrence of bumps on the surface during firing and prevent reactivity with moisture by thermal etching to improve durability and efficiency of the solar cell device.

Another object of the present invention is to provide an electrode formed from the aluminum paste composition.

In addition, another object of the present invention is to provide a solar cell device provided with the electrode.

1. Aluminum powder; BaO-containing PbO-based first glass frit; BaO-containing non-PbO-based second glass frit; BaO-free, non-PbO-based third glass frit; And an organic vehicle.

2. In the above 1, the first glass frit is PbO 30 to 60 mol%, Al 2 O 3 1 to 15 mol%, SiO 2 20 to 40 mol%, B 2 O 3 10 to 30 mol%, TiO 2 0.5 Aluminum paste composition comprising from 5 to 5 mol% and BaO 0.1 to 10 mol%.

3. In the above 1, the second glass frit is 0.1 to 5 mol% Al 2 O 3 , SiO 2 1 to 20 mol%, B 2 O 3 10 to 40 mol%, BaO 0.1 to 10 mol%, ZnO 20 to An aluminum paste composition comprising 50 mol% and 0.1-10 mol% Li 2 O.

4. In the above 1, the third glass frit is Al 2 O 3 1 to 10 mol%, SiO 2 15 to 25 mol%, B 2 O 3 35 to 45 mol%, Bi 2 O 3 1 to 15 mol% and Aluminum paste composition comprising 10 to 20 mol% ZnO.

5. In the above 1, the mixing ratio of the first glass frit, the second glass frit and the third glass frit is 1: 0.25-1.5: 0.3-1.5 by weight of aluminum paste composition.

6. In the above 1, the aluminum powder is aluminum paste composition containing 60 to 78% by weight.

7. In the above 1, wherein the total glass frit including the first to third glass frit is contained in an aluminum paste composition of 0.01 to 5% by weight.

8. The aluminum paste composition of 1 above, wherein the organic vehicle is contained in 20 to 35% by weight.

9. The aluminum paste composition of 1 above, wherein the organic vehicle is a mixture of 1 to 25% by weight of the polymer resin and 75 to 99% by weight of the organic solvent.

10. The electrode formed of the aluminum paste composition of any one of the above 1 to 9.

11. Solar cell device provided with the electrode of the above 10.

The aluminum paste composition according to the present invention may prevent the reaction with moisture to enhance the durability of the solar cell device itself.

In addition, the paste composition of the present invention suppresses the occurrence of bumps on the surface during firing, and has excellent appearance, less warpage of the silicon wafer substrate, and can increase the maximum output current (Isc) of the solar cell device and improve efficiency. An electrode can be provided.

1 is a diagram schematically illustrating a cross-sectional view of a solar cell element.

The present invention relates to an aluminum powder; BaO-containing PbO-based first glass frit; BaO-containing non-PbO-based second glass frit; BaO-free, non-PbO-based third glass frit; And by including an organic vehicle, it is possible to prevent the reaction with moisture to improve the durability of the solar cell element itself, and to suppress the occurrence of bumps on the surface during firing, the appearance is excellent and the warpage phenomenon of the silicon wafer substrate as well as the sun The present invention relates to an aluminum paste composition capable of providing an electrode capable of increasing a maximum output current (Isc) of a battery device and improving efficiency thereof, and a solar cell device using the same.

Hereinafter, the present invention will be described in detail.

The aluminum paste composition of the present invention is aluminum powder; BaO-containing PbO-based first glass frit; BaO-containing non-PbO-based second glass frit; BaO-free, non-PbO-based third glass frit; And an organic vehicle.

Aluminum powder is a conductive metal that is the main component of the paste composition for forming the back electrode.

The aluminum powder is not particularly limited in average particle size, and may be, for example, 1 to 10 μm.

Aluminum powder is preferably included in 60 to 78% by weight in 100% by weight of the total amount of aluminum paste composition. If the content is less than 60% by weight, the thickness of the printed aluminum rear electrode after firing becomes thin so that the back field (BSF) may not be sufficiently formed and the efficiency may be lowered. When the content is more than 78% by weight, the thickness of the silicon wafer substrate is too thick. May cause warpage.

In the present invention, three kinds of glass frits, namely, a PbO-based first glass frit containing BaO, a non-PbO-based second glass frit containing BaO, and a non-PbO-based third glass frit not containing BaO are used. It is characterized by.

The first glass frit, which is a PbO-based glass frit containing a BaO component, may contain 0.1 to 10 mol% of BaO component, preferably 0.5 to 7 mol%, more preferably 1 to 5 mol%. . If the content is less than 0.5 mol%, it is difficult to sufficiently suppress the generation of bumps on the electrode surface after firing, and if the content is more than 10 mol%, the thermal expansion coefficient may be large to cause warpage of the silicon wafer substrate.

The first glass frit is preferably a PbO-Al 2 O 3 -SiO 2 -B 2 O 3 -TiO 2 -BaO-based oxide, more preferably 30 to 60 mol% of PbO and 1 to 15 mol of Al 2 O 3. %, 20 to 40 mol% SiO 2 , 10 to 30 mol% B 2 O 3 , 0.5 to 5 mol% TiO 2 and 0.1 to 10 mol% BaO.

Further, the first glass frit may contain 0 to 10 mol% of alkali metal oxides such as K 2 O, Na 2 O, Li 2 O, and the like; 0-10 mol% of alkaline earth metal oxides, such as MgO, CaO, and SrO; ZnO 0-15 mol%, V 2 O 5 0-10 mol%; P 2 O 5 0 To 10 mol% may be further included.

The glass transition temperature (Tg) of the first glass frit may be adjusted according to the type of the constituents and their content, and may be, for example, 350 to 500 ° C.

The second glass frit, which is a non-PbO-based glass frit containing a BaO component, is preferably an Al 2 O 3 -SiO 2 -B 2 O 3 -BaO-ZnO-LiO-based oxide, more preferably Al 2 O 3 0.1 To 5 mol%, SiO 2 1 to 20 mol%, B 2 O 3 10 to 40 mol%, BaO 0.1 to 10 mol%, ZnO 20 to 50 mol% and Li 2 O 0.1 to 10 mol% may be included. .

Further, the second glass frit may contain 0 to 10 mol% of alkali metal oxides such as K 2 O and Na 2 O; 0-10 mol% of alkaline earth metal oxides, such as MgO, CaO, and SrO; V 2 O 5 0-10 mole%; It may further comprise P 2 O 5 0-10 mol%.

The third glass frit, which is a non-PbO-based glass frit containing no BaO component, is preferably an Al 2 O 3 -SiO 2 -B 2 O 3 -Bi 2 O 3 -ZnO-based oxide, more preferably Al 2 O 3 1 to 10 mol%, SiO 2 15 to 25 mol%, B 2 O 3 35 to 45 mol%, Bi 2 O 3 It is preferable to include 1 to 15 mol% and ZnO 10 to 20 mol%.

In addition, the third glass frit may include 0 to 10 mol% of an alkali metal oxide such as Li 2 O, K 2 O, Na 2 O, or the like; 0-10 mol% of alkaline earth metal oxides, such as MgO, CaO, and SrO; V 2 O 5 0-10 mole%; It may further comprise P 2 O 5 0-10 mol%.

The mixing ratio of the first glass frit, the second glass frit and the third glass frit is preferably 1: 0.25-1.5: 0.3-1.5 by weight, more preferably 1: 0.5-1.2: 0.5-1.2, most preferably Is 1: 0.9-1.1: 0.7-1. When the weight ratio is out of the range, that is, for the first glass frit, if the second glass frit is included in a small amount out of the range, there is a problem that the water resistance is lowered and if it is included in an excessive amount, the warpage phenomenon increases. When the glass frit is included in a small amount outside the above range, the efficiency may be lowered. When the glass frit is included in an excessive amount, the warpage phenomenon may increase.

Thus, the glass frit composed of three kinds has advantages of easy melting point control and low coefficient of thermal expansion. In particular, it suppresses the occurrence of bumps on the surface during firing, which improves appearance and prevents water resistance from thermal etching. When applied to the battery element improves durability and improves efficiency.

The total glass frit including the first to third glass frits is preferably contained in an amount of 0.01 to 5% by weight, more preferably 0.05 to 4% by weight in 100% by weight of the total content of the aluminum paste composition. If the content is less than 0.01% by weight, the adhesion between the aluminum back electrode and the silicon wafer substrate may decrease after firing. If the content is more than 5% by weight, the warpage of the silicon wafer substrate may increase, and the resistance may increase, thereby reducing the efficiency of the solar cell device. Can be.

The organic vehicle is a component for imparting consistency and rheological properties suitable for printing to the aluminum paste composition, and may be a solution in which a polymer resin and various additives are dissolved in an organic solvent as necessary.

The organic vehicle may be a mixture of 75 to 99% by weight of the organic solvent and 1 to 25% by weight of the polymer resin, and may be a mixture of 1 to 10% by weight of the additive.

As the organic solvent, a known one may be used, and a solvent having a boiling point of 150 to 300 ° C. may be used to prevent drying of the paste composition and control fluidity during the printing process. Specifically, tripropylene glycol methyl ether, tripropylene glycol n-butyl ether, dipropylene glycol n-propyl ether, dipropylene glycol n-butyl ether, propylene glycol phenyl ether, diethylene glycol ethyl ether, diethylene glycol n-butyl Ether, diethylene glycol hexyl ether, ethylene glycol hexyl ether, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol n-butyl ether, ethylene glycol phenyl ether, ethylene glycol, terpineol, butyl carbitol, butyl Carbitol acetate, 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate (texanol), and the like. These may be used alone or in combination of two or more thereof.

The organic solvent is preferably included in 75 to 99% by weight relative to 100% by weight of the total amount of the organic vehicle. In this content range, optimum fluidity can be imparted to the paste composition.

As the polymer resin, those known in the art may be used, and examples thereof include ethylcellulose, nitrocellulose, hydroxypropylcellulose, phenol, acrylic, rosin, polyvinyl alcohol, polyvinylpyrrolidone, polyethylene glycol, polyvinylbutyral, urea, Butadiene-styrene (ABS), polymethyl methacrylate, polyvinyl chloride, polyvinyl chloride, polyvinyl chloride, polyvinyl chloride, polyvinyl chloride, polyvinylidene chloride, Polyether sulfone, polyether ether ketone, polyether sulfone, polyether sulfone, polysulfone, polyether sulfone, polyether sulfone, polyether sulfone, polyether sulfone, polyether sulfone, polyether sulfone, polyether sulfone, And the like. These can be used individually or in mixture of 2 or more types.

The polymer resin may be included in an amount of 1 to 25% by weight, preferably 5 to 25% by weight, based on 100% by weight of the total amount of the organic vehicle. When the content is less than 1% by weight, the printability and dispersion stability of the paste composition may be lowered, and when the content is more than 25% by weight, the paste composition may not be printed.

The organic vehicle may further comprise a dispersant as an additive together with the above components.

As the dispersant, a known surfactant can be used, for example, polyoxyethylene alkyl ether having 6 to 30 carbon atoms in the alkyl group, polyoxyethylene alkyl aryl ether having 6 to 30 carbon atoms in the alkyl group, and 6 to 30 carbon atoms in the alkyl group. Ethers such as polyoxyethylene-polyoxypropylene alkyl ether; Ester ethers such as glycerin ester addition polyoxyethylene ether, sorbitan ester addition polyoxyethylene ether, and sorbitol ester addition polyoxyethylene ether; Esters such as polyethylene glycol fatty acid ester, glycerin ester, sorbitan ester, propylene glycol ester, sugar ester and alkyl polyglucoside; Nitrogen-containing systems such as fatty acid alkanolamide, polyoxyethylene fatty acid amide, polyoxyethylene alkylamine having 6 to 30 carbon atoms of an alkyl group, and amine oxide; And high molecular compounds such as polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic acid, polyacrylic acid-maleic acid copolymer, and poly12-hydroxystearic acid. Commercially available products include Hypermer KD (Uniqema), AKM 0531 (Japan Oil Holding Co., Ltd.), KP (Shin-Etsu Chemical Co., Ltd.), POLYFLOW (Kyoeisha Chemical Co., Ltd.), EFTOP (Tochem Products), Asahi guard (Asahi Glass, Inc.), Suflon (Asahi Glass, Inc.), SOLSPERSE (Genekka), EFKA (EFKA Chemicals, Inc.) ), PB 821 (Ajinomoto Co., Ltd.), BYK-184, BYK-185, BYK-2160, Anti-Terra U (manufactured by BYK), and the like can also be used. These can be used individually or in mixture of 2 or more types.

The dispersant may be included in an amount of 1 to 10% by weight, preferably 1 to 5% by weight, based on 100% by weight of the total amount of the organic vehicle.

The organic vehicle may further include additives such as thixotropic agents, wetting agents, antioxidants, corrosion inhibitors, antifoaming agents, thickeners, dispersants, tackifiers, coupling agents, antistatic agents, polymerization inhibitors, and antisettling agents.

The organic vehicle is preferably included in 20 to 35% by weight relative to the total content of aluminum paste composition 100% by weight. If the content is less than 20% by weight, the viscosity of the aluminum paste composition may be too high to reduce fluidity and printability.When the content is more than 35% by weight, it is difficult to secure a sufficient thickness of the paste layer due to the relatively low content of aluminum powder. .

The aluminum paste composition comprising the above components can provide an electrode that can suppress bumps on the surface during firing so that the appearance can be excellent, the warpage of the silicon wafer substrate can be reduced, and the water resistance can be prevented. have.

The present invention provides an electrode formed from the aluminum paste composition.

The electrode is formed through a process of printing and drying and firing an aluminum paste composition on a substrate, for example, a silicon wafer substrate on which an Ag front electrode is formed. The printing method is not particularly limited, and for example, screen printing, gravure printing, offset printing or the like can be used. Drying may be carried out at 60 to 300 ° C. for several seconds to several minutes, and firing may be performed at 600 to 950 ° C. for several seconds.

The electrode formed as described above is applied to the rear electrode of the solar cell device, thereby increasing the maximum output current Isc of the solar cell device and ensuring improved efficiency and durability.

The present invention provides a solar cell element provided with an electrode formed from the aluminum paste composition.

Hereinafter, preferred examples are provided to aid the understanding of the present invention, but these examples are merely illustrative of the present invention and are not intended to limit the scope of the appended claims. It is apparent to those skilled in the art that various changes and modifications can be made to the present invention, and such modifications and changes belong to the appended claims.

Example

Manufacturing example  1-4: glass Frit  Ⅰ-Ⅳ Manufacturing

Glass frits were prepared with the ingredients and contents as shown in Table 1 below.

[Table 1]

Figure pat00001

Example  One

74 wt% of the aluminum powder having an average particle size of 1-10 μm, 1.5 wt%, 1.5 wt% and 0.5 wt% of the glass frit of Preparation Examples 1, 2 and 3, respectively, and hydroxypropyl to butylcarbitol After adding 22.5% by weight of an organic vehicle in which a cellulose resin was dissolved, an aluminum paste composition was prepared by stirring at 1,000 rpm for 3 minutes using a mixer that simultaneously rotates and rotates.

Example  2-3, Comparative example  1-3

The same procedure as in Example 1, except that the ingredients and contents as shown in Table 2 were used. At this time, the content represents weight%.

[Table 2]

Figure pat00002

Test Example

The physical properties of the aluminum paste compositions prepared in Examples and Comparative Examples were measured by the following methods, and the results are shown in Table 3 below.

Print and dry bus bars with silver paste composition on the back side of single crystal silicon wafer substrates with a size of 156 mm x 156 mm, thickness 200 m and pyramid structure of about 4-6 m in height by texturing process I was. Thereafter, the prepared aluminum paste composition was applied and dried using a 250 mesh screen printing plate. At this time, the coating amount was set to 1.5 ± 0.1g before drying. The finger lines were then printed and dried using silver paste on the front SiNx side. The substrate subjected to the above process was fired for about 10 seconds in an infrared continuous kiln having a temperature of 720-900 ° C. The firing process is carried out by simultaneous firing front and back while passing the silicon wafer substrate into a belt furnace comprising a burn-out section of about 600 ° C. and a firing section of 800-950 ° C. After removing the organic material in the paste, the aluminum was melted to form an electrode, thereby manufacturing a solar cell device.

(1) water resistance

The prepared solar cell device was placed in a thermostatic chamber filled with distilled water at 80 ° C. and left for 10 minutes. It was observed visually whether hydrogen gas (bubble) was generated by the reaction of the aluminum electrode formed in the thermostat with moisture for the time left to stand, and evaluated based on the following criteria. At this time, when bubbles were generated, the time was also confirmed.

<Evaluation Criteria>

(Circle): No bubble generation (good).

X: Bubble generation (defect).

(2) Bump  Count

Bumps and aluminum bubbles generated on the rear aluminum electrode portions of the manufactured solar cell elements were visually observed and the number thereof was measured.

(3) deflection (mm)

The manufactured solar cell device was placed on a flat bottom and four corners were aligned with the bottom, and then the degree of lifting of the center part was measured. Usually, when warping is 1.50 mm or less, it is regarded as a good level.

(4) Efficiency (%)

The efficiency of the manufactured solar cell device was evaluated using an evaluation device (SCM-1000, FitTech).

[Table 3]

Figure pat00003

As shown in Table 3, the electrode formed by using the aluminum paste composition of Examples 1 to 3 comprising a mixture of three kinds of glass frit according to the present invention is prevented from reacting with moisture and excellent in water resistance of the solar cell device Durability can be improved, and the occurrence of bumps on the surface during the firing was suppressed and the warpage amount was small, so that the appearance was excellent and the efficiency was high when applied to the solar cell device.

On the other hand, Comparative Examples 1 to 3 containing only a part of the first to third glass frits were difficult to satisfy the water resistance, bump suppression, and bending characteristics at the same time. In addition, in the case of the comparative example 4 using the glass frit of the manufacture example IV which manufactured by mixing the 1st glass frit, the 2nd glass frit, and the 3rd glass frit in the weight ratio of 1: 1: 1, it is rather water resistance, bump suppression, and curvature. It is confirmed that the characteristics are inferior to other comparative examples, and the efficiency is also the worst.

10: silicon wafer substrate 20: N + layer
30: antireflection film 40: front electrode
50: P + layer 60: rear electrode

Claims (11)

Aluminum powder;
BaO-containing PbO-based first glass frit;
BaO-containing non-PbO-based second glass frit;
BaO-free, non-PbO-based third glass frit; And
An aluminum paste composition comprising an organic vehicle.
The method according to claim 1, wherein the first glass frit is PbO 30 to 60 mol%, Al 2 O 3 1 to 15 mol%, SiO 2 20 to 40 mol%, B 2 O 3 10 to 30 mol%, TiO 2 0.5 to 5 An aluminum paste composition comprising mol% and 0.1-10 mol% BaO.
The method of claim 1, wherein the second glass frit is 0.1 to 5 mol% of Al 2 O 3 , 1 to 20 mol% of SiO 2 , 10 to 40 mol% of B 2 O 3 , 0.1 to 10 mol% of BaO, and 20 to 50 mol of ZnO. Aluminum paste composition comprising 0.1 to 10% by mole and Li 2 O.
The glass frit of claim 1, wherein the third glass frit includes 1 to 10 mol% of Al 2 O 3 , 15 to 25 mol% of SiO 2 , 35 to 45 mol% of B 2 O 3 , 1 to 15 mol% of Bi 2 O 3, and ZnO 10. Aluminum paste composition comprising from 20 mol%.
The aluminum paste composition of claim 1, wherein the mixing ratio of the first glass frit, the second glass frit, and the third glass frit is 1: 0.25-1.5: 0.3-1.5 by weight.
The aluminum paste composition of claim 1, wherein the aluminum powder is included in an amount of 60 to 78 wt%.
The aluminum paste composition of claim 1, wherein the total glass frit including the first to third glass frits is included in an amount of 0.01 to 5 wt%.
The aluminum paste composition of claim 1, wherein the organic vehicle is included in an amount of 20 to 35 wt%.
The aluminum paste composition according to claim 1, wherein the organic vehicle is a mixture of 1 to 25% by weight of a polymer resin and 75 to 99% by weight of an organic solvent.
Electrode formed from the aluminum paste composition of any one of Claims 1-9.
Solar cell device provided with the electrode of claim 10.
KR1020110138888A 2011-12-21 2011-12-21 Aluminium paste composition and solar cell device using the same KR20130071592A (en)

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