KR20130071088A - Nitride semiconductor light emitting device - Google Patents

Nitride semiconductor light emitting device Download PDF

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Publication number
KR20130071088A
KR20130071088A KR1020110138410A KR20110138410A KR20130071088A KR 20130071088 A KR20130071088 A KR 20130071088A KR 1020110138410 A KR1020110138410 A KR 1020110138410A KR 20110138410 A KR20110138410 A KR 20110138410A KR 20130071088 A KR20130071088 A KR 20130071088A
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South Korea
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layer
semiconductor layer
emitting device
light emitting
type semiconductor
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KR1020110138410A
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Korean (ko)
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정재호
김종빈
황형선
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엘지디스플레이 주식회사
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Publication of KR20130071088A publication Critical patent/KR20130071088A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: A nitride semiconductor light emitting device is provided to improve manufacturing yield by forming a plurality of hole guide layers between active layer and P-type semiconductor layer. CONSTITUTION: An active layer with a multiple quantum-well structure is interposed between N-type semiconductor layer(115) and P-type semiconductor layer(140). The multiple quantum-well structure has a plurality of quantum well layers and a plurality of quantum barrier layers. The quantum barrier layers are formed with an InGaN semiconductor layer. First and second hole guide layers(240,250) are deposited on the quantum barrier layer and P-type semiconductor layer. The first and second hole guide layers include a semiconductor material used in the quantum barrier layer.

Description

Nitride semiconductor light emitting device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride semiconductor light emitting device, and more particularly to a nitride semiconductor light emitting device having improved light emission efficiency by smoothly injecting holes into an active layer.

In general, nitrides of Group III elements such as gallium nitride (GaN) and aluminum nitride (AlN) used in nitride semiconductor light emitting devices have excellent thermal stability and have a direct transition type energy band structure. It is attracting much attention as a material for optoelectronic devices in the ultraviolet region. In particular, blue and green light emitting devices using gallium nitride (GaN) have been used in various applications such as large-scale color flat panel displays, traffic lights, indoor lighting, high-density light sources, high resolution output systems and optical communication.

1 illustrates a structure of a conventional nitride semiconductor light emitting device, and FIG. 2 illustrates an active layer region of the multi-quantum well structure of FIG. 1.

1 and 2, in the conventional nitride semiconductor light emitting device, a buffer layer 12 is formed on an insulating substrate 10, and an undoped layer 13 and an N-type semiconductor are formed on the buffer layer 12. The layer 15, the active layer 30, the P-type semiconductor layer 40 and the transparent metal layer 45 are stacked. In addition, the N-type electrode 20 and the P-type electrode 50 are formed on the N-type semiconductor layer 15 and the P-type semiconductor layer 40 exposed to the outside, respectively.

The insulating substrate 10 may be made of a material suitable for growing a nitride semiconductor single crystal. For example, the insulating substrate 10 may be formed using a material such as sapphire, and in addition to sapphire, zinc oxide (ZnO), gallium nitride (GaN), silicon carbide (silicon carbide) SiC), aluminum nitride (AlN), or the like.

The active layer 30 is a region where electrons and holes are recombined, and a plurality of quantum well layers 31 and quantum barrier layers 33 represented by a general formula of InxGa1-xN (0 ≦ x ≦ 1) are alternately formed. It has a quantum well structure. The emission wavelength emitted from the nitride semiconductor light emitting device is determined according to the type of material constituting the active layer 30.

The active layer 30 has a single quantum well (SQW) structure having one quantum well layer and a multi quantum well (MQW) structure having a plurality of quantum well layers smaller than about 100 μs. Among them, as shown in FIG. 2, the active layer 30 of the multi-quantum well structure has better light efficiency compared to the current and has a high luminous output than the single quantum well structure.

The light efficiency of the nitride semiconductor light emitting device is basically determined by the probability of recombination of electrons and holes in the active layer, that is, internal quantum efficiency. In order to improve the internal quantum efficiency, research has been conducted mainly to improve the structure of the active layer itself or to increase the effective mass of the carrier.

However, in general, since the mobility of holes is lower than that of electrons, there is a problem in that the P-type semiconductor layer 40 cannot be sufficiently supplied to the active layer 30.

As such, when holes are not sufficiently supplied to the active layer 30, electrons that do not bond among the electrons supplied from the N-type semiconductor layer 15 are generated, thereby deteriorating the luminous efficiency.

Recently, a method of additionally forming a nano laminated structure has been proposed to improve hole injection characteristics in an active layer. However, a long growth time for forming a nano laminated structure causes a problem in that the overall productivity decreases.

In addition, an AlGaN-based electron barrier layer forming method has been proposed for electron overflow and hole injection, but aluminum (Al) acts as a source of contamination during semiconductor layer growth, thereby degrading device characteristics. In addition, an additional process is required to keep the reactor in a high temperature state for a long time to form the electronic barrier layer.

The present invention provides a nitride semiconductor light emitting device having improved luminous efficiency by inserting a semiconductor layer used for a quantum well layer of an active layer or a Mg-doped semiconductor layer between an active layer and a P-type semiconductor layer so that holes can be smoothly injected into the active layer. The object is to provide an element.

Further, another object of the present invention is to provide a nitride semiconductor light emitting device having a plurality of positive sharing layers formed between the active layer and the P-type semiconductor layer, thereby improving luminous efficiency and manufacturing yield.

The nitride semiconductor light emitting device of the present invention for solving the problems of the prior art as described above, N-type semiconductor layer and P-type semiconductor layer; And an active layer interposed between the N-type semiconductor layer and the P-type semiconductor layer and having a multi-quantum well structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed. The first and second positive sharing layers including the semiconductor material used for the quantum barrier layer are stacked between the layers so that the energy levels of the P-type semiconductor layer, the second positive sharing layer and the first positive sharing layer are sequentially lowered. It is characterized by one.

The nitride semiconductor light emitting device of the present invention inserts a semiconductor layer or Mg-doped semiconductor layer used for the quantum well layer of the active layer between the active layer and the P-type semiconductor layer so that holes can be smoothly injected into the active layer, thereby improving luminous efficiency. It has an improved effect.

In addition, the nitride semiconductor light emitting device of the present invention has the effect of improving the luminous efficiency and manufacturing yield by forming a plurality of positive covalent layer between the active layer and the P-type semiconductor layer.

1 illustrates a structure of a conventional nitride semiconductor light emitting device.
FIG. 2 is a diagram illustrating an active layer region of the multi-quantum well structure of FIG. 1.
3 is a view showing an active layer structure of a multi-quantum well structure according to a first embodiment of the present invention.
4 is a view showing an active layer structure of a multi-quantum well structure according to a second embodiment of the present invention.
5 is a view showing an active layer structure of a multi-quantum well structure according to a third embodiment of the present invention.
6A and 6B are diagrams comparing defects generated in the nitride semiconductor light emitting devices of the prior art and the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

The embodiments of the present invention change the structure of the active layer region around the conventional nitride semiconductor light emitting device of FIG. Accordingly, except for the structure of the active layer described below, components of the N-type electrode, the P-type electrode, and the like of the nitride semiconductor light emitting device disclosed in the prior art may be applied to the embodiments of the present invention.

3 is a view showing an active layer structure of a multi-quantum well structure according to a first embodiment of the present invention.

Referring to FIG. 3, the active layer 230 of the nitride semiconductor light emitting device according to the first embodiment of the present invention is formed in a multi quantum well (MQW) structure as follows. Between the N-type semiconductor layer 115 and the P-type semiconductor layer 140, the first quantum barrier layer 231a, the second quantum barrier layer 231b, the third quantum barrier layer 231c, and the fourth quantum barrier layer ( 231d), the fifth quantum barrier layer 231e and the sixth quantum barrier layer 231f, and the first quantum well layer 232a, the second quantum well layer 232b, and the first quantum barrier layer 231f, respectively. An active layer 230 including the third quantum well layer 232c, the fourth quantum well layer 232d, and the fifth quantum well layer 232e is formed.

In addition, first and second positive sharing layers 240 and 250 are formed between the sixth quantum barrier layer 231f and the P-type semiconductor layer 140 of the active layer 230.

The N-type semiconductor layer 115 and the P-type semiconductor layer 140 may be formed of a compound-based group III nitride semiconductor layer such as (Al, In, Ga) N. For example, the N-type semiconductor layer 115 and the P-type semiconductor layer 140 may be N-type and P-type GaN, or N-type and P-type AlGaN, respectively.

In addition, the first quantum barrier layer 231a, the second quantum barrier layer 231b, the third quantum barrier layer 231c, the fourth quantum barrier layer 231d, the fifth quantum barrier layer 231e, and the sixth The quantum barrier layers 231f may be formed by doping p-type (p +) impurities or n-type (n +) impurities to the GaN-based semiconductor material.

In addition, the first quantum well layer 232a, the second quantum well layer 232b, the third quantum well layer 232c, the fourth quantum well layer 232d, and the fifth quantum well layer 232e may be InxGa1-. xN (0 <x <1), and silicon may be doped to lower the driving voltage.

In addition, the first positive sharing layer 240 is formed of an InGaN-based semiconductor layer, which is the quantum barrier layers, and the second positive sharing layer 250 is formed by injecting an Mg-based metallic dopant into an InGaN-based semiconductor layer. . When the Mg-based metallic dopant is implanted, the Mg-based metallic dopant is diffused in the InGaN-based semiconductor layer to increase the operating voltage level of the InGaN-based semiconductor layer.

As shown in the figure, it can be seen that the P-type semiconductor layer 140, the second positive sharing layer 250, and the first positive sharing layer 240 sequentially decrease the operating voltage level. Accordingly, the holes injected into the P-type semiconductor layer 140 easily cross the barriers of the second positive sharing layer 250 and the first positive sharing layer 240 to the sixth quantum barrier layer 231f of the active layer 230. Can be supplied. In addition, holes in the P-type semiconductor layer 140 can easily reach the active layer 230, thereby lowering the operating voltage of the nitride semiconductor light emitting device.

The nitride semiconductor light emitting device of the present invention has an effect of smoothly injecting holes into the active layer by inserting a semiconductor layer or Mg-doped semiconductor layer used in the quantum well layer of the active layer between the active layer and the P-type semiconductor layer.

In addition, the nitride semiconductor light emitting device of the present invention has the effect of improving the luminous efficiency and manufacturing yield by forming a plurality of positive covalent layer between the active layer and the P-type semiconductor layer.

4 is a view showing an active layer structure of a multi-quantum well structure according to a second embodiment of the present invention.

Referring to FIG. 4, the active layer 230 region of the nitride semiconductor light emitting device according to the second exemplary embodiment of the present invention is an N-type semiconductor layer 115, an active layer 230, a third positive sharing layer 350, and a fourth It is composed of a positive-coating layer 350 and a P-type semiconductor layer 140.

The active layer 230 includes a first quantum barrier layer 231a, a second quantum barrier layer 231b, a third quantum barrier layer 231c, a fourth quantum barrier layer 231d, and a fifth quantum barrier layer 231e. And the sixth quantum barrier layers 231f and the first quantum well layer 232a, the second quantum well layer 232b, the third quantum well layer 232c, and the fourth quantum barrier layer 231f. And a well layer 232d and a fifth quantum well layer 232e.

Between the active layer 230 and the P-type semiconductor layer 140, a quantum barrier layer and the third positive covalent layer 350 in which an Mg-based metallic dopant is diffused into an InGaN-based semiconductor layer for forming quantum barrier layers A fourth positive sharing layer 340 formed of an InGaN-based semiconductor layer is formed.

The third positive sharing layer 350 has a region in which an energy level increases at the boundary between the sixth quantum barrier layer 231f and the third positive sharing layer 350 due to the diffusion of Mg, thereby forming the P-type semiconductor layer 140. The holes injected from the N-th may be easily moved to the third positive sharing layer 350 and the sixth quantum barrier layer 231f through the fourth positive sharing layer 340.

As a result, the bonding ratio of the holes and the electrons of the active layer 230 is increased, and the driving voltage of the light emitting device is lowered.

Therefore, the nitride semiconductor light emitting device of the present invention has an effect of smoothly injecting holes into the active layer by inserting a semiconductor layer or Mg-doped semiconductor layer used for the quantum well layer of the active layer between the active layer and the P-type semiconductor layer. .

In addition, the nitride semiconductor light emitting device of the present invention has the effect of improving the luminous efficiency and manufacturing yield by forming a plurality of positive covalent layer between the active layer and the P-type semiconductor layer.

5 is a view showing an active layer structure of a multi-quantum well structure according to a third embodiment of the present invention.

Referring to FIG. 5, regions of the active layer 230 of the nitride semiconductor light emitting device according to the third exemplary embodiment of the present invention are the N-type semiconductor layer 115, the active layer 230, the fifth positive sharing layer 440a, and the sixth layer. It is composed of a positive covalent layer 440b and a P-type semiconductor layer 140.

The active layer 230 includes a first quantum barrier layer 231a, a second quantum barrier layer 231b, a third quantum barrier layer 231c, a fourth quantum barrier layer 231d, and a fifth quantum barrier layer 231e. And the sixth quantum barrier layers 231f and the first quantum well layer 232a, the second quantum well layer 232b, the third quantum well layer 232c, and the fourth quantum barrier layer 231f. And a well layer 232d and a fifth quantum well layer 232e.

A fifth positive sharing layer 440a and a sixth positive sharing layer 440b formed of an InGaN-based semiconductor layer for forming quantum barrier layers are formed between the active layer 230 and the P-type semiconductor layer 140.

In the fifth positive sharing layer 440a, the amount of In injected is relatively higher than that of the sixth positive sharing layer 440b so that the energy level (energy barrier) is lowered sequentially from the P-type semiconductor layer 140 (In composition amount Differently). As a result, holes injected from the P-type semiconductor layer 140 may easily move to the sixth positive sharing layer 440b and the sixth quantum barrier layer 231f through the fifth positive sharing layer 440a.

As a result, the bonding ratio of the holes and the electrons of the active layer 230 is increased, and the driving voltage of the light emitting device is lowered.

Therefore, the nitride semiconductor light emitting device of the present invention has an effect of smoothly injecting holes into the active layer by inserting a semiconductor layer or Mg-doped semiconductor layer used for the quantum well layer of the active layer between the active layer and the P-type semiconductor layer. .

In addition, the nitride semiconductor light emitting device of the present invention has the effect of improving the luminous efficiency and manufacturing yield by forming a plurality of positive covalent layer between the active layer and the P-type semiconductor layer.

6A and 6B are diagrams comparing defects generated in the nitride semiconductor light emitting devices of the prior art and the present invention.]

6A and 6B, after the same driving voltage and output are output to the nitride semiconductor light emitting device according to the related art and the nitride semiconductor light emitting device according to the present invention, the occurrence of defects is compared.

In the conventional nitride semiconductor light emitting device, a buffer layer 12, an undoped layer 13, an N-type semiconductor layer 15, an active layer 30, and a P-type semiconductor layer 40 are sequentially formed on a sapphire insulating substrate 10. However, the P-type semiconductor layer 40 is formed directly on the active layer 30, and the defect occurrence rate during the growth of the semiconductor layer is high due to the lattice constant unevenness.

The following is an example of the nitride semiconductor light emitting device of the second embodiment of the present invention, but the same applies to the first and third embodiments of the present invention.

However, in the nitride semiconductor light emitting device according to the second embodiment of the present invention, the buffer layer 112, the undoped layer 113, the N-type semiconductor layer 115, the active layer 130, and the first semiconductor light emitting device 110 are formed on the sapphire insulating substrate 110. The third positive sharing layer 350, the fourth positive sharing layer 340, and the P-type semiconductor layer 140 are sequentially formed.

That is, since the P-type semiconductor layer 140 is formed after the positive covalent layer that acts as a buffer on the active layer 130 is formed, defects due to lattice constant unevenness during growth of the semiconductor layer are significantly lowered.

Therefore, even when the nitride semiconductor light emitting device is operated, it is lower than the defect occurrence rate of the conventional nitride semiconductor light emitting device, which is advantageous for device stability.

110: insulating substrate 112: buffer layer
113: undoped layer 115: N-type semiconductor layer
130: active layer 240: first positive covalent layer
250: second positive sharing layer 140: p-type semiconductor layer

Claims (7)

An N-type semiconductor layer and a P-type semiconductor layer; And
An active layer interposed between the N-type semiconductor layer and the P-type semiconductor layer and having a plurality of quantum well layers and a plurality of quantum barrier layers alternately arranged;
The P-type semiconductor layer, the second positive-coating layer, and the first positive-coating layer are laminated between the quantum barrier layer and the P-type semiconductor layer by stacking first and second positive-coating layers including a semiconductor material used for the quantum barrier layer. The nitride semiconductor light-emitting device of claim 1, wherein the energy level of the light is sequentially lowered.
The nitride semiconductor light emitting device of claim 1, wherein the quantum barrier layer is formed of an InGaN-based semiconductor layer.
The nitride semiconductor light emitting device of claim 1, wherein the first positive covalent layer adjacent to the quantum barrier layer is formed of an InGaN-based semiconductor layer.
The nitride semiconductor light emitting device of claim 1, wherein the second positive covalentness layer adjacent to the P-type semiconductor layer is formed of an InGaN-based semiconductor layer.
The nitride semiconductor light emitting device of claim 1, wherein Mg is doped in the InGaN-based semiconductor layer.
The nitride semiconductor light emitting device as claimed in claim 1, wherein the second positive sharing layer adjacent to the P-type semiconductor layer is Mg-doped with an InGaN-based semiconductor layer.
The nitride semiconductor light emitting device of claim 1, wherein the first and second positive covalent layer are formed of an InGaN-based semiconductor layer, but have different In compositions.
KR1020110138410A 2011-12-20 2011-12-20 Nitride semiconductor light emitting device KR20130071088A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150086769A (en) * 2014-01-20 2015-07-29 엘지이노텍 주식회사 Light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150086769A (en) * 2014-01-20 2015-07-29 엘지이노텍 주식회사 Light emitting device

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