KR20130069266A - Light emitting apparatus - Google Patents

Light emitting apparatus Download PDF

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Publication number
KR20130069266A
KR20130069266A KR1020110136915A KR20110136915A KR20130069266A KR 20130069266 A KR20130069266 A KR 20130069266A KR 1020110136915 A KR1020110136915 A KR 1020110136915A KR 20110136915 A KR20110136915 A KR 20110136915A KR 20130069266 A KR20130069266 A KR 20130069266A
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KR
South Korea
Prior art keywords
light
light emitting
unit
light conversion
heat
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KR1020110136915A
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Korean (ko)
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KR101338704B1 (en
Inventor
오정택
이유원
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엘지이노텍 주식회사
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Priority to KR1020110136915A priority Critical patent/KR101338704B1/en
Priority to US14/357,091 priority patent/US9249963B2/en
Priority to PCT/KR2012/009140 priority patent/WO2013069924A1/en
Priority to CN201280066401.6A priority patent/CN104040739B/en
Priority to EP12848029.0A priority patent/EP2777080B1/en
Priority to TW101141216A priority patent/TWI506831B/en
Publication of KR20130069266A publication Critical patent/KR20130069266A/en
Application granted granted Critical
Publication of KR101338704B1 publication Critical patent/KR101338704B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A light emitting device is disclosed. The light emitting device includes a light emitting unit; And a light conversion unit disposed in a path of light from the light emitting unit, wherein the light conversion unit comprises: a first light conversion lens unit; And a second light conversion lens unit disposed next to the first light conversion lens unit.

Description

Light emitting device {LIGHT EMITTING APPARATUS}

An embodiment relates to a light emitting device.

Recently, the manufacturing method of gallium nitride (GaN) -based white light emitting diodes (LEDs), which have been actively developed worldwide, is a single chip type method in which a fluorescent material is combined with a blue or UV LED chip to obtain white and multi-chip. It is divided into two ways of obtaining white by combining two or three LED chips with each other.

A typical method of implementing white light emitting diodes in a multi-chip form is to combine three chips of RGB. Each chip has an uneven operating voltage and the output of each chip changes according to the ambient temperature. Is showing a problem.

Due to the above problems, the multi-chip form is suitable for a special lighting purpose that requires the production of various colors by adjusting the brightness of each LED through the circuit configuration rather than the implementation of the white light emitting diode.

Therefore, a binary system combining a blue light emitting LED which is relatively easy to manufacture and has high efficiency as a method of implementing a white light emitting diode and a phosphor which is excited by the blue light emitting LED and emits yellow light is typically used. .

In a binary system, an yttrium aluminum garnet (YAG: Yttrium Aluminum Garnet) phosphor using a blue LED as an excitation light source and Ce3 + as a activator of rare earth trivalent ions, that is, a YAG: Ce phosphor, is emitted from the blue LED. White light emitting diodes in the form of excitation with light have been mainly used.

In addition, white light emitting diodes are being used in various types of packages according to their applications, and ultra-small light emitting diode devices and electronic displays, which are typically surface mounted devices (SMDs), which are applied to backlighting of mobile phones. And vertical lamp types for solid state display elements and image display.

On the other hand, as an index used in analyzing the characteristics of white light, there are a correlated color temperature (CCT) and a color rendering index (CRI).

Correlated color temperature (CCT) means that when an object shines with visible light and the color looks the same as the color of a black body radiating at a certain temperature, the temperature of the black body is equal to the temperature of the object. The higher the color temperature, the more dazzling and blueish white it is.

That is, even if the same white light, the color temperature is low, the color feels a little warmer, if the color temperature is high it feels cold. Accordingly, by adjusting the color temperature, it is possible to satisfy even the characteristics of special lighting requiring various colors.

In the case of the white light emitting diode using the conventional YAG: Ce phosphor, the color temperature was only 6000 to 8000K. In addition, the color rendering index (CRI) indicates the degree to which the color of the object is different when irradiated with sunlight and other artificially produced lights, and the CRI value is 100 when the color of the object is the same as in sunlight. It is defined as That is, the color rendering index (CRI) is an index indicating how close to the color of the object under the artificial light when irradiated with sunlight.

In other words, the more white light source that CRI approaches 100, the more the color of the object perceived by the human eye under sunlight.

Currently, CRI of incandescent bulb is over 80 and fluorescent lamp is over 75, whereas CRI of commercially available white LED shows about 70-75.

Therefore, the white LED using the conventional YAG: Ce phosphor has a problem that the color temperature and the color rendering index are rather low.

In addition, since only YAG: Ce phosphors are used, it is difficult to control color coordinates, color temperature, and color rendering index.

As such, in relation to a light emitting diode using a phosphor, Korean Laid-Open Patent Publication No. 10-2005-0098462 or the like is disclosed.

Embodiments provide a light emitting device having improved optical characteristics and reliability.

In one embodiment, a light emitting device includes: a light emitting unit; And a light conversion unit disposed in a path of light from the light emitting unit, wherein the light conversion unit comprises: a first light conversion lens unit; And a second light conversion lens unit disposed next to the first light conversion lens unit.

In one embodiment, a light emitting device includes: a body part in which a cavity is formed; A light emitting part disposed in the cavity; A first capping part disposed in the cavity and covering the light emitting part; And a plurality of light conversion lens parts disposed on one surface of the first capping part.

In one embodiment, a light emitting device includes: a light emitting unit; A capping part covering the light emitting part; And a light conversion pattern formed on one surface of the capping part.

In one embodiment, a light emitting device includes a substrate; A light emitting part disposed on the substrate; A heat dissipation unit covering the light emitting unit; And a light conversion unit disposed on the heat dissipation unit.

The light emitting device according to the exemplary embodiment may adjust characteristics such as a direction angle of light emitted for each wavelength band by using a plurality of light-changing lens parts. That is, light of a relatively short wavelength band may be emitted from the first light conversion lens unit, and light of a relatively long wavelength band may be emitted from the second light conversion lens unit.

In this case, the size, the radius of curvature, and the concentration of the light conversion particles may be appropriately adjusted. Accordingly, the light emitting device according to the embodiment may emit light having a desired characteristic for each wavelength band.

In addition, the light emitting device according to the embodiment may easily adjust the color coordinates by adjusting the size of the first light conversion lens unit and the size of the second light conversion lens unit.

In addition, the light emitting device according to the embodiment may form the light conversion pattern with the light conversion lens parts. Accordingly, the light emitting device according to the embodiment can emit light having a desired wavelength band at a desired position from the optical axis of the light emitting portion. That is, the light emitting device according to the embodiment can appropriately adjust the position according to the wavelength band to be converted using the light conversion pattern.

Therefore, the light emitting device according to the embodiment may have improved light emission characteristics.

In addition, the light conversion lens parts include a convex curved surface or the like. In particular, the light-changing lens parts may be convex in a direction away from the light emitting part. Accordingly, the contact area between the light conversion lens parts and the capping part covering the light conversion lens parts is increased, and heat of the light conversion lens parts can be easily released to the capping part.

Accordingly, the light emitting device according to the embodiment may reduce performance degradation due to heat, and may have improved reliability and durability.

1 is a perspective view illustrating a light emitting device package according to an embodiment.
FIG. 2 is a cross-sectional view showing a section cut along AA 'in FIG. 1; FIG.
3 is a view illustrating one cross section of the light emitting unit.
4 to 6 are plan views illustrating the light conversion unit.
7 is a cross-sectional view showing a light emitting device package according to another embodiment.
8 is a plan view illustrating the heat transfer unit.
9 is a cross-sectional view showing a light emitting device package according to another embodiment.
10 is a cross-sectional view showing a light emitting device package according to another embodiment.
11 is a cross-sectional view illustrating a light emitting device package according to still another embodiment.

In the description of the embodiments, it is described that each substrate, frame, sheet, layer or pattern is formed "on" or "under" each substrate, frame, sheet, In this case, "on" and "under " all include being formed either directly or indirectly through another element. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 is a perspective view illustrating a light emitting device package according to an embodiment. FIG. 2 is a cross-sectional view illustrating a cross section taken along line AA ′ in FIG. 1. 3 is a view illustrating one cross section of the light emitting unit. 4 to 6 are plan views illustrating the light conversion unit.

1 to 6, a light emitting diode package according to an embodiment includes a body part 100, a plurality of lead electrodes 210 and 220, a light emitting part 300, a first capping part 410, and a light conversion. The part 500 and the second capping part 420 are included.

The body part 100 accommodates the light emitting part 300, the filling part 400, the reflective layer 500, and the light converting part 500, and supports the lead electrodes 210 and 220. .

The body 100 may be formed of any one of a resin material such as PPA, a ceramic material, a liquid crystal polymer (LCP), a syndiotactic (SPS), a polyphenylene ether (PPS), and a silicon material. However, the material of the body 100 is not limited thereto. The body portion 100 may be integrally formed by injection molding, or may be formed in a structure in which a plurality of layers are stacked.

The body portion 100 includes a cavity (C) is open at the top. The cavity C may be formed with respect to the body portion 100 by patterning, punching, cutting or etching. In addition, the cavity (C) may be formed by a metal mold modeled after the shape of the cavity (C) during the molding of the body portion (100).

The shape of the cavity C may be formed in a cup shape, a concave container shape, or the like, and the surface thereof may be formed in a circular shape, a polygonal shape, or a random shape, but is not limited thereto.

The inner surface of the cavity C may be formed as a surface perpendicular or inclined with respect to the bottom surface of the cavity C in consideration of the light distribution angle of the light emitting diode package according to the embodiment.

The body portion 100 includes a base portion 110 and the receiving portion 120.

The base part 110 supports the receiving part 120. In addition, the base unit 110 supports the lead electrodes 210 and 220. The base portion 110 may have, for example, a rectangular parallelepiped shape.

The receiving part 120 is disposed on the base part 110. By the receiving part 120, the cavity C is defined. That is, the cavity C is a groove formed in the accommodating part 120. The accommodating part 120 surrounds the circumference of the cavity C. The receiving part 120 may have a closed loop shape when viewed from the top side. For example, the accommodation part 120 may have a wall shape surrounding the cavity C.

The receiving part 120 includes an upper surface, an outer surface, and an inner surface. The inner side surface is an inclined surface inclined with respect to the upper surface.

The lead electrodes 210 and 220 may be implemented as a lead frame, but is not limited thereto.

The lead electrodes 210 and 220 may be disposed in the body part 100, and the lead electrodes 210 and 220 may be electrically spaced apart from the bottom surface of the cavity C. Outer portions of the lead electrodes 210 and 220 may be exposed to the outside of the body portion 100.

Ends of the lead electrodes 210 and 220 may be disposed on one side of the cavity C or on the opposite side of the cavity C.

The lead electrodes 210 and 220 may be formed of a lead frame, and the lead frame may be formed during injection molding of the body part 100. The lead electrodes 210 and 220 may be, for example, a first lead electrode 210 and a second lead electrode 220.

The first lead electrode 210 and the second lead electrode 220 are spaced apart from each other. The first lead electrode 210 and the second lead electrode 220 are electrically connected to the light emitting part 300.

The light emitting unit 300 includes at least one light emitting diode chip. For example, the light emitting unit 300 may include a colored LED chip or a UV LED chip.

The light emitting unit 300 may be a horizontal light emitting diode or a vertical light emitting diode chip. As shown in FIG. 3, the light emitting part 300 includes a conductive substrate 310, a light reflecting layer 320, a first conductive semiconductor layer 330, a second conductive semiconductor layer 340, and an active layer 350. ) And the second electrode 360.

The conductive substrate 310 is made of a conductor. The conductive substrate 310 may include the light reflecting layer 320, the first conductive semiconductor layer 330, the second conductive semiconductor layer 340, the active layer 350, and the second electrode 360. I support it.

The conductive substrate 310 is connected to the first conductive semiconductor layer 330 through the light reflecting layer 320. That is, the conductive substrate 310 is a first electrode for applying an electrical signal to the first conductive semiconductor layer 330.

The light reflecting layer 320 is disposed on the conductive substrate 310. The light reflection layer 320 reflects light emitted from the active layer 350 upwards. In addition, the light reflection layer 320 is a conductive layer. Thus, the light reflecting layer 320 connects the conductive substrate 310 to the first conductive semiconductor layer 330. Examples of the material used as the light reflection layer 320 may include a metal such as silver or aluminum.

The first conductivity type semiconductor layer 330 is disposed on the light reflecting layer 320. The first conductivity type semiconductor layer 330 has a first conductivity type. The first conductive semiconductor layer 330 may be an n-type semiconductor layer. For example, the first conductivity type semiconductor layer 330 may be an n-type GaN layer.

The second conductivity type semiconductor layer 340 is disposed on the first conductivity type semiconductor layer 330. The second conductivity type semiconductor layer 340 may face the first conductivity type semiconductor layer 330 and may be a p-type semiconductor layer. The second conductivity type semiconductor layer 340 may be, for example, a p-type GaN layer.

The active layer 350 is interposed between the first conductive semiconductor layer 330 and the second conductive semiconductor layer 340. The active layer 350 has a single quantum well structure or a multiple quantum well structure. The active layer 350 may be formed with a period of an InGaN well layer and an AlGaN barrier layer or a period of an InGaN well layer and a GaN barrier layer, and the light emitting material of the active layer 350 may have an emission wavelength such as a blue wavelength, a red wavelength, or a green color. It may vary depending on the wavelength.

The second electrode 360 is disposed on the second conductivity type semiconductor layer 340. The second electrode 360 is connected to the second conductive semiconductor layer 340.

Alternatively, the light emitting unit 300 may be a horizontal LED. At this time, in order to connect the horizontal LED to the first lead electrode 210, additional wiring may be necessary.

The light emitting part 300 may be connected to the first lead electrode 210 by a bump or the like, and may be connected to the second lead electrode 220 by a wire. In particular, the light emitting part 300 may be directly disposed on the first lead electrode 210.

In addition, the light emitting unit 300 may be connected to the lead electrodes by wire bonding, die bonding, or flip bonding, but is not limited thereto.

In addition, a reflective layer may be formed in the cavity C. The reflective layer may be disposed on an inner side surface of the cavity C. The reflective layer may be coated on the inner surface of the cavity (C). The reflective layer may include a highly reflective material, for example, white PSR (Photo Solder Resist) ink, silver (Ag), aluminum (Al), or the like.

The first capping part 410 is disposed in the cavity C. The first capping part 410 covers the light emitting part 300. The first capping part 410 is disposed on the bottom surface of the cavity C. In addition, the first capping part 410 covers the top and side surfaces of the light emitting part 300. The first capping part 410 covers a portion of the lead electrodes 210 and 220.

The first capping part 410 may include a curved surface. In more detail, an upper surface of the first capping part 410 facing the opened upper portion of the cavity C may include a curved surface. In more detail, the upper surface of the first capping part 410 may be formed as a convex curved surface as a whole.

The first capping part 410 may seal the light emitting part 300. The first capping unit 410 may perform a function of protecting the light emitting unit 300. The first capping part 410 is transparent. The first capping part 410 may include a material having a refractive index of 2 or less. Examples of the material used as the first capping part 410 may include a silicone resin or an epoxy resin.

The first capping unit 410 may perform a spacer function to space the light conversion unit 500 and the light emitting unit 300. In addition, the first capping unit 410 may be interposed between the light emitting unit 300 and the light conversion unit 500 to perform a heat insulation function. That is, the first capping part 410 may be formed of a material having a relatively low thermal conductivity. For example, the first capping part 410 may have a lower thermal conductivity than the second capping part 420. Accordingly, heat generated in the light emitting part 300 may be effectively blocked by the first capping part 410.

The light conversion unit 500 is disposed in the cavity C. The light converter 500 is disposed in a path of light from the light emitter 300. The light converter 500 is disposed on the light emitter 300. The light conversion part 500 is disposed on at least one surface of the first capping part 410. The light converter 500 is disposed on an upper surface of the first capping unit 410. That is, the light converter 500 may be disposed on the curved surface of the first capping unit 410. In more detail, the light conversion part 500 may be directly disposed on the curved surface of the first capping part 410.

The light converter 500 receives the light emitted from the light emitter 300 and converts the wavelength. For example, the light converter 500 may convert incident blue light into green light and red light. That is, the light conversion unit 500 converts a part of the blue light into green light having a wavelength band of about 520 nm to about 560 nm, and another part of the blue light having a wavelength band of about 630 nm to about 660 nm. Can be converted to red light. In addition, the light conversion unit 500 may convert the incident blue light into yellow light, green light, and red light.

In addition, the light conversion unit 500 may convert the ultraviolet light emitted from the light emitting unit 300 into blue light, green light, and red light. That is, the light conversion unit 500 converts a part of the ultraviolet light into blue light having a wavelength band of about 430 nm to about 470 nm, and another part of the ultraviolet light having a wavelength band of about 520 nm to about 560 nm. Green light, and another portion of the ultraviolet light to red light having a wavelength band between about 630 nm and about 660 nm.

Accordingly, white light may be formed by light converted by the light conversion unit 500 and light not converted. That is, blue light, green light, and red light may be combined to emit white light.

As illustrated in FIGS. 2 and 4, the light conversion unit 500 includes a plurality of light conversion lens units 510, 520, and 530. In more detail, the light conversion unit 500 may include a first light conversion lens unit 510, a second light conversion lens unit 520, and a third light conversion lens unit 530.

The first light conversion lens unit 510 is disposed on the first capping unit 410. The first light conversion lens unit 510 is disposed on an upper surface of the first capping unit 410. In more detail, the first light conversion lens unit 510 may be disposed on the curved surface of the first capping unit 410.

The first light conversion lens unit 510 has a curved surface 513. In more detail, the first light conversion lens unit 510 may have a convex curved surface 513 toward the open portion of the cavity C, that is, upward. The curved surface 513 of the first light conversion lens unit 510 may be spherical or aspheric. Alternatively, the first light conversion lens unit 510 may include a concave surface. That is, the first light conversion lens unit 510 may include a surface concave toward the light emitting unit 300.

The first light conversion lens unit 510 may convert light from the light emitting unit 300 into light of a first wavelength band. For example, the first light conversion lens unit 510 may convert incident light into green light. In more detail, the first light conversion lens unit 510 may convert ultraviolet light or blue light from the light emitting unit 300 into green light having a wavelength band between about 520 nm and about 560 nm.

The first light conversion lens unit 510 includes a plurality of first light conversion particles 511 and a first matrix 512.

The first light conversion particles 511 may convert blue light or ultraviolet light emitted from the light emitting part 300 into green light. That is, the first light conversion particles may convert the blue light or ultraviolet light into green light having a wavelength band between about 520 nm and about 560 nm.

The first light conversion particles 511 may be a plurality of quantum dots (QDs). The quantum dot may include a core nanocrystal and a shell nanocrystal surrounding the core nanocrystal. In addition, the quantum dot may include an organic ligand bound to the shell nanocrystal. In addition, the quantum dot may include an organic coating layer surrounding the shell nanocrystals.

The shell nanocrystals may be formed of two or more layers. The shell nanocrystals are formed on the surface of the core nanocrystals. The quantum dot may convert the wavelength of the light incident on the core core crystal into a long wavelength through the shell nanocrystals forming the shell layer and increase the light efficiency.

The quantum dot may include at least one of a group II compound semiconductor, a group III compound semiconductor, a group V compound semiconductor, and a group VI compound semiconductor. More specifically, the core nanocrystals may include Cdse, InGaP, CdTe, CdS, ZnSe, ZnTe, ZnS, HgTe or HgS. The shell nanocrystals may include CuZnS, CdSe, CdTe, CdS, ZnSe, ZnTe, ZnS, HgTe or HgS. The diameter of the quantum dot may be 1 nm to 10 nm.

The wavelength of light emitted from the quantum dots can be controlled by the size of the quantum dots or the molar ratio of the molecular cluster compound and the nanoparticle precursor in the synthesis process. The organic ligand may include pyridine, mercapto alcohol, thiol, phosphine, phosphine oxide, and the like. The organic ligands serve to stabilize unstable quantum dots after synthesis. After synthesis, a dangling bond is formed on the outer periphery, and the quantum dots may become unstable due to the dangling bonds. However, one end of the organic ligand is in an unbonded state, and one end of the unbound organic ligand bonds with the dangling bond, thereby stabilizing the quantum dot.

Particularly, when the quantum dot has a size smaller than the Bohr radius of an exciton formed by electrons and holes excited by light, electricity or the like, a quantum confinement effect is generated to have a staggering energy level and an energy gap The size of the image is changed. Further, the charge is confined within the quantum dots, so that it has a high luminous efficiency.

Unlike general fluorescent dyes, the quantum dots vary in fluorescence wavelength depending on the particle size. That is, as the size of the particle becomes smaller, it emits light having a shorter wavelength, and the particle size can be adjusted to produce fluorescence in a visible light region of a desired wavelength. That is, the quantum dot used as the first light conversion particles 511 may have a diameter of about 1 nm to about 3 nm to convert incident light into green light. In addition, since the extinction coefficient is 100 to 1000 times higher than that of a general dye, and the quantum yield is also high, it produces very high fluorescence.

The quantum dot can be synthesized by a chemical wet process. Here, the chemical wet method is a method of growing particles by adding a precursor material to an organic solvent, and the quantum dots can be synthesized by a chemical wet method.

In addition, a green phosphor may be used as the first light conversion particles 511. Examples of the green phosphor include zinc manganese doped zinc silicon oxide phosphors (eg, Zn 2 SiO 4: Mn), europium doped strontium gallium sulfide phosphors (eg, SrGa 2 S 4: Eu) or europium doped barium silicon oxide. Chloride-based phosphors (for example, Ba 5 Si 2 O 7 Cl 4: Eu) and the like.

The first matrix 512 receives the first light conversion particles 511. The first matrix 512 surrounds the first light conversion particles 511. The first matrix 512 disperses the first light conversion particles 511.

The first matrix 512 is transparent. The first matrix 512 may have a lens shape. The external shape of the first light conversion lens unit 510 is implemented by the first matrix 512. Examples of the material used for the first matrix 512 include silicone resins or epoxy resins.

The second light conversion lens unit 520 is disposed on the first capping unit 410. The second light conversion lens unit 520 is disposed on an upper surface of the first capping unit 410. In more detail, the second light conversion lens unit 520 may be disposed on the curved surface of the first capping unit 410.

In addition, the second light conversion lens unit 520 is disposed next to the first light conversion lens unit 510. That is, the first light conversion lens unit 510 and the second light conversion lens unit 520 may be disposed on the same plane and adjacent to each other.

The second light conversion lens unit 520 has a curved surface 523. In more detail, the second light conversion lens unit 520 may have a convex curved surface 523 toward the open portion of the cavity C, that is, upward. The curved surface 523 of the second light conversion lens unit 520 may be spherical or aspheric. Alternatively, the second light conversion lens unit 520 may include a concave surface. That is, the second light conversion lens unit 520 may include a surface concave toward the light emitting unit 300.

The second light conversion lens unit 520 may convert the light from the light emitting unit 300 into light of a second wavelength band. For example, the second light conversion lens unit 520 may convert incident light into red light. In detail, the second light conversion lens unit 520 may convert ultraviolet light or blue light from the light emitting unit 300 into red light having a wavelength band between about 630 nm and about 660 nm.

The second light conversion lens unit 520 includes a plurality of second light conversion particles 521 and a second matrix 522.

The second light conversion particles 521 may convert blue light or ultraviolet light emitted from the light emitting part 300 into red light. That is, the first light conversion particles may convert the blue light or ultraviolet light into red light having a wavelength band between about 630 nm and about 660 nm.

The second light conversion particles 521 may be a plurality of red quantum dots (QDs). The quantum dots used as the second light conversion particles 521 may have a diameter of about 4 nm to about 10 nm to convert incident light into red light.

In addition, a red phosphor may be used as the second light conversion particles 521. Examples of the red phosphor include strontium titanium oxide phosphors doped with praseodymium or aluminum (eg, SrTiO 3: Pr, Al) or calcium titanium oxide phosphors doped with praseodymium (eg, CaTiO 3: Pr). have.

The second matrix 522 receives the second light conversion particles 521. The second matrix 522 surrounds the second light conversion particles 521. The second matrix 522 disperses the second light conversion particles 521.

The second matrix 522 is transparent. The second matrix 522 may have a lens shape. The external shape of the second light conversion lens unit 520 is implemented by the second matrix 522. Examples of the material used as the second matrix 522 include silicone resins or epoxy resins.

The third light conversion lens part 530 is disposed on the first capping part 410. The third light conversion lens unit 530 is disposed on an upper surface of the first capping unit 410. In more detail, the third light conversion lens unit 530 may be disposed on the curved surface of the first capping unit 410.

In addition, the third light conversion lens unit 530 is disposed next to the first light conversion lens unit 510. In addition, the third light conversion lens unit 530 is disposed next to the second light conversion lens unit 520. That is, the first light conversion lens unit 510, the second light conversion lens unit 520, and the third light conversion lens unit 530 may be disposed on the same plane and adjacent to each other.

The third light conversion lens unit 530 has a curved surface 533. In more detail, the third light conversion lens unit 530 may have a convex curved surface 533 toward the open portion of the cavity C, that is, upward. The curved surface 533 of the third light conversion lens unit 530 may be spherical or aspheric. Alternatively, the third light conversion lens unit 530 may include a concave surface. That is, the third light conversion lens unit 530 may include a surface concave toward the light emitting unit 300.

The third light conversion lens unit 530 may convert light from the light emitting unit 300 into light of a third wavelength band. For example, when ultraviolet light is emitted from the light emitting part 300, the third light conversion lens part 530 may convert ultraviolet light into blue light. In more detail, the third light conversion lens unit 530 may convert the ultraviolet rays from the light emitting unit 300 into blue light having a wavelength band between about 430 nm and about 470 nm.

Alternatively, the third light conversion lens unit 530 may convert the blue light from the light emitting unit 300 into yellow light.

The third light conversion lens unit 530 includes a plurality of third light conversion particles 531 and a third matrix 532.

The third light conversion particles 531 may convert ultraviolet light emitted from the light emitting part 300 into blue light. That is, the first light conversion particles may convert the ultraviolet light into blue light having a wavelength band between about 430 nm and about 470 nm.

The third light conversion particles 531 may be a plurality of red quantum dots (QDs). The quantum dots used as the third light conversion particles 531 may have a diameter of about 1 nm to about 2 nm to convert incident light into blue light.

In addition, a blue phosphor may be used as the third light conversion particles 531.

In contrast, when the light emitter 300 generates blue light, the third light conversion particles 531 may convert blue light from the light emitter 300 into yellow light. In this case, the third light conversion particles 531 may include a yellow phosphor such as a YAG phosphor.

The third matrix 532 receives the third light conversion particles 531. The third matrix 532 surrounds the third light conversion particles 531. The third matrix 532 disperses the third light conversion particles 531.

The third matrix 532 is transparent. The third matrix 532 may have a lens shape. The external shape of the third light conversion lens unit 530 is implemented by the third matrix 532. Examples of the material used as the third matrix 532 include silicone resins or epoxy resins.

In addition, as illustrated in FIG. 4, a transmission area TA is disposed between the first light conversion lens unit 510, the second light conversion lens unit 520, and the third light conversion lens unit 530. Can be formed. That is, light from the light emitting part 300 is not converted into the transmission area TA, but may pass directly through. The area of the transmission area TA is appropriately adjusted, so that the color coordinates of the light emitting device according to the embodiment may be appropriately adjusted. In addition, the transmission area TA may be defined in an area around the first light conversion lens part 510, the second light conversion lens part 520, and the third light conversion lens part 530. .

The first light conversion lens unit 510, the second light conversion lens unit 520, and the third light conversion lens unit 530 respectively emit light having different wavelength bands. In addition, the first light conversion lens unit 510, the second light conversion lens unit 520, and the third light conversion lens unit 530 may be designed differently from each other.

Accordingly, optical characteristics of the first light conversion lens unit 510, the second light conversion lens unit 520, and the third light conversion lens unit 530 may be designed to be suitable for light in each wavelength band. have.

That is, the size, shape, and refractive index of the first light conversion lens unit 510, the second light conversion lens unit 520, and the third light conversion lens unit 530 are adjusted to be suitable for light in each wavelength band. Can be.

For example, the light conversion lens portion that emits light in a relatively long wavelength range may be designed to have a small directivity, and the light conversion lens portion that emits light in a relatively short wavelength range may be designed to have a large orientation angle. have.

That is, the size, radius of curvature, and light conversion particles 511, 521, and 531 of the first light conversion lens unit 510, the second light conversion lens unit 520, and the third light conversion lens unit 530. ) Concentration can be appropriately adjusted. Accordingly, the light emitting device according to the embodiment may emit light having a desired characteristic for each wavelength band.

In addition, the light emitting device according to the embodiment may adjust the size of the first light conversion lens unit 510, the size of the second light conversion lens unit 520, and the size of the third light conversion lens unit 530. Color coordinates can be easily adjusted.

5 and 6, the light conversion lens units 510, 520, and 530 may form a light conversion pattern. That is, the light conversion unit 500 includes the light conversion pattern. That is, the light conversion unit 500 may include light conversion lens units 510, 520, and 530 which are repeatedly repeated.

The light conversion pattern includes light conversion lens parts 510, 520, and 530 evenly disposed on the entire area of the upper surface of the first capping part 410. As illustrated in FIG. 5, the light conversion lens units 510, 520, and 530 may have a circular shape. As illustrated in FIG. 6, the light conversion lens units 510, 520, and 530 may have a rectangular shape.

The light conversion lens units 510, 520, and 530 may be a plurality of first light conversion lens units 510, a plurality of second light conversion lens units 520, and a plurality of third light conversion lens units 520. have.

In this case, the first light conversion lens parts 510 emit green light, the second light conversion lens parts 520 emit red light, and the third light conversion lens parts 520 are blue light or yellow. Can emit light.

The first light conversion lens parts 510, the second light conversion lens parts 520, and the third light conversion lens parts 520 may be alternately disposed. The first light conversion lens parts 510 may be disposed at a central portion thereof, and the second light conversion lens parts 520 may be disposed at an outer portion thereof. That is, the first light conversion lens parts 510 are disposed close to the optical axis of the light emitting part 300, and the second light conversion lens parts 520 are disposed relatively far from the optical axis of the light emitting part 300. Can be.

Accordingly, the light emitting device according to the embodiment may emit light of a desired wavelength band at a desired position from the optical axis of the light emitting unit 300. That is, the light emitting device according to the embodiment can appropriately adjust the position according to the wavelength band to be converted using the light conversion pattern.

In addition, the diameters of the first light conversion lens unit 510, the second light conversion lens unit 520, and the third light conversion lens unit 530 may be about 10 μm to about 1 mm.

The second capping part 420 covers the light conversion part 500. The second capping part 420 is disposed in the cavity C. The second capping part 420 seals the light conversion part 500. The second capping part 420 covers the light conversion lens parts 510, 520, and 530. The second capping part 420 covers the curved surfaces of the light conversion lens parts 510, 520, and 530. In more detail, the light conversion lens parts 510, 520, 530 are in direct contact with the light conversion lens parts 510, 520, 530.

The second capping part 420 is transparent. The second capping part 420 may include an inorganic material. The second capping part 420 may include silicon oxide or indium tin oxide.

The second capping part 420 may have a relatively high thermal conductivity. The second capping part 420 may have a higher thermal conductivity than the first capping part 410. In addition, the second capping unit 420 may have a higher thermal conductivity than the light conversion unit 500.

 The light conversion lens units 510, 520, and 530 include convex curved surfaces 513, 523, and 533. Accordingly, the contact area between the light conversion lens parts 510, 520, 530 and the second capping part 420 is increased, and the heat of the light conversion lens parts 510, 520, 530 is increased in the second area. Through the capping part 420, it can be easily released.

Accordingly, the light emitting device according to the embodiment may reduce performance degradation due to heat, and may have improved reliability and durability.

In addition, as described above, the light emitting device according to the embodiment may emit white light having improved optical characteristics by using the light conversion lens units 510, 520, and 530.

7 is a cross-sectional view showing a light emitting device package according to another embodiment. 8 is a plan view illustrating the heat transfer unit. 9 is a cross-sectional view showing a light emitting device package according to another embodiment. In the description of the present embodiments, reference is made to the description of the above light emitting device packages. That is, the description of the foregoing light emitting device package may be essentially combined with the description of the embodiments, except for the changed part.

7 to 9, the light emitting diode package according to the present embodiment includes a heat transfer part 600.

The heat transfer part 600 is interposed between the light converter 500 and the light emitter 300. The heat transfer part 600 may have a high thermal conductivity. The heat transfer part 600 is disposed in the first capping part 410. In this case, the heat transfer part 600 is disposed in the middle of the first capping part 410.

Accordingly, the first capping part 410 may be divided into a first heat insulating part 411 and a second heat insulating part 412. That is, the heat transfer part 600 has a higher thermal conductivity than the first capping part 410. That is, the first heat insulating part 411 and the second heat insulating part 412 have a lower thermal conductivity than the heat transfer part 600 and sandwich the heat transfer part 600.

The heat transfer part 600 may be formed of a material having a high thermal conductivity. Indium tin oxide, aluminum, or silver having a high reflectance may be used as the heat transfer part 600. In this case, as shown in FIG. 8, the heat transfer part 600 may have a mesh shape. That is, the heat transfer part 600 includes a transmission part T for transmitting light. That is, the heat transfer part 600 is a light transmitting heat transfer part.

The heat transfer part 600 is connected to the body part 100. In more detail, the heat transfer part 600 is connected to a heat radiation member (not shown) disposed on the body part 100. Accordingly, the heat transfer part 600 can effectively discharge the heat generated from the light emitting part 300 to the outside.

In addition, the first heat insulating part 411 and the second heat insulating part 412 may be combined with the heat transfer part 600 to effectively block heat. That is, the first heat insulating part 411 primarily blocks heat from the light emitting part 300, and the second heat insulating part 412 discharges heat remaining after being discharged through the heat transfer part 600. Can be effectively blocked.

In addition, as shown in FIG. 9, the heat transfer part 600 may be formed of a transparent layer. For example, the heat transfer part 600 may be a transparent conductive layer. Examples of the material used as the heat transfer part 600 may include indium tin oxide or zinc oxide doped with metal.

As such, the LED package according to the embodiment may effectively block and emit heat from the light emitting unit 300 to prevent deterioration of the light conversion unit 500.

Thus, the LED package according to the embodiment can have improved reliability and durability.

10 is a cross-sectional view showing a light emitting device package according to another embodiment. In the description of the present embodiments, reference is made to the description of the above light emitting device packages. That is, the description of the foregoing light emitting device package may be essentially combined with the description of the embodiments, except for the changed part.

Referring to FIG. 10, the light conversion unit 500 may be disposed outside the body portion 100. That is, the light conversion part 500 may be disposed outside the cavity C of the body part 100. In addition, the first capping part 410 may be entirely filled in the cavity C.

Light conversion lens parts 510, 520, and 530 included in the light conversion part 500 are disposed outside the cavity C. In addition, the second capping part 420 may cover the light conversion lens parts 510, 520, and 530 in a thin film form.

Accordingly, the second capping part 420 may have the same shape as the light conversion lens parts 510, 520, and 530. That is, the second capping part 420 may have the same curved surface as the curved surfaces of the light conversion lens parts 510, 520, and 530.

Accordingly, the light emitting device package according to the present exemplary embodiment may freely adjust optical characteristics of the light conversion lens parts 510, 520, and 530 without being affected by the second capping part 420.

In addition, since the light conversion unit 500 is disposed outside the cavity C, the light conversion unit 500 may not be damaged by heat generated from the light emitting unit 300.

Therefore, the light emitting device package according to the embodiment may have improved reliability and durability.

11 is a cross-sectional view illustrating a light emitting device package according to still another embodiment. In the description of the present embodiments, reference is made to the description of the above light emitting device packages. That is, the description of the foregoing light emitting device package may be essentially combined with the description of the embodiments, except for the changed part.

Referring to FIG. 11, the light emitting device package according to the present exemplary embodiment may include a substrate 130, two lead electrodes 210 and 220, a light emitting part 300, a heat radiating part 602, and a light converting part 510 and 520. , 530 and the capping unit 430.

The substrate 130 supports the lead electrodes 210 and 220, the light emitting part 300, the heat radiating part 602, the light converting parts 510, 520, 530, and the capping part 430. do. The substrate 130 is formed of an insulator. The substrate 130 may have a plate shape. The substrate 130 may be a polymer substrate 130 or a glass substrate 130. In more detail, an epoxy resin or the like may be used as the substrate 130.

The lead electrodes 210 and 220 may penetrate the substrate 130. The lead electrodes 210 and 220 may extend from an upper surface to a lower surface of the substrate 130. The lead electrodes 210 and 220 and the substrate 130 may be formed by a dual injection process.

The light emitting part 300 is disposed on the substrate 130. The light emitting part 300 is electrically connected to the lead electrodes 210 and 220.

The heat dissipation unit 602 is disposed on the substrate 130. The heat radiating part 602 covers the light emitting part 300. The heat dissipation unit 602 covers the side surface and the top surface of the light emitting unit 300. The heat dissipation unit 602 may be in direct contact with the light emitting unit 300. The heat dissipation unit 602 may also be in direct contact with the lead electrodes 210 and 220.

The heat radiating part 602 emits heat generated from the light emitting part 300 to the outside. In more detail, the heat dissipation unit 602 may emit heat generated from the light emitting unit 300 to the side.

The heat dissipation unit 602 may be formed by stacking a plurality of thin films. In more detail, the heat dissipation unit 602 may be formed by stacking thin films having different thermal conductivity. The heat dissipation unit 602 may have a thickness of about 1 μm to about 1 mm.

The heat dissipation unit 602 includes a first heat conducting layer 610, a first heat insulating layer 620, a second heat conducting layer 630, and a second heat insulating layer 640.

The first thermal conductive layer 610 is disposed on the substrate 130. The first heat conducting layer 610 covers the light emitting part 300. In addition, the first thermal conductive layer 610 covers the top surface of the substrate 130. The first heat conducting layer 610 covers the top and side surfaces of the light emitting part 300. The first thermal conductive layer 610 may be in direct contact with the light emitting part 300. In addition, the first thermal conductive layer 610 may extend to the side surface of the substrate 130. In more detail, the first heat conducting layer 610 may extend to side and bottom surfaces of the substrate 130.

The first thermal conductive layer 610 may have a thickness of about 1 μm to about 500 μm.

The first heat conducting layer 610 includes a first heat transfer part 611 and a first heat release part 612.

The first heat transfer part 611 is a portion covered by the first heat insulation layer 620. That is, the first heat transfer part 611 is a portion corresponding to the first heat insulation layer 620. The first heat transfer part 611 is a part in direct contact with the first heat insulating layer 620.

The first heat dissipation part 612 is a portion exposed by the first heat insulation layer 620. The first heat dissipation part 612 is integrally formed with the first heat transfer part 611. The first heat dissipation part 612 may be a portion exposed to the air.

Heat generated from the heat dissipation unit 602 is transferred to the first heat dissipation unit 612 through the first heat transfer unit 611, and the first heat dissipation unit 612 is the first heat. Heat transmitted from the transfer unit 611 may be released into the air.

The first heat insulating layer 620 is disposed on the first heat conductive layer 610. The first heat insulating layer 620 covers a portion of the top surface of the first heat conductive layer 610. The first heat insulating layer 620 is disposed directly on the top surface of the first heat conductive layer 610. The first heat insulating layer 620 exposes a portion of the first heat conductive layer 610. That is, the first heat insulating layer 620 may cover the first heat conducting layer 610 and expose the first heat dissipation part 612.

The first heat insulating layer 620 may have a thickness of about 1 μm to about 500 μm.

The second heat conducting layer 630 is disposed on the first heat insulating layer 620. The first heat conducting layer 610 covers the top surface of the first heat insulating layer 620. The second thermal conductive layer 630 may be in direct contact with the top surface of the first heat insulating layer 620.

The second thermal conductive layer 630 may have a thickness of about 1 μm to about 500 μm.

The second heat conducting layer 630 includes a second heat transfer part 631 and a second heat release part 632.

The second heat transfer part 631 is a portion covered by the second heat insulation layer 640. That is, the second heat transfer part 631 is a portion corresponding to the second heat insulation layer 640. The second heat transfer part 631 is a portion in direct contact with the second heat insulation layer 640.

The second heat dissipation part 632 is a portion exposed by the second heat insulation layer 640. The second heat dissipation part 632 is integrally formed with the second heat transfer part 631. The second heat dissipation part 632 may be a portion exposed to air.

The heat generated from the heat dissipating unit 602 and passing through the first heat insulating layer 620 is transferred to the second heat dissipating unit 632 through the second heat transfer unit 631 and the second heat dissipation unit 632. The heat dissipation part 632 may discharge heat transferred from the second heat transfer part 631 into the air.

The second heat insulating layer 640 is disposed on the second heat conductive layer 630. The second heat insulating layer 640 covers a portion of the top surface of the second heat conductive layer 630. The second heat insulating layer 640 is disposed directly on the top surface of the second heat conductive layer 630. The second heat insulating layer 640 exposes a portion of the second heat conductive layer 630. That is, the second heat insulating layer 640 may cover the second heat conducting layer 630 and expose the second heat dissipation part 632.

The second heat insulation layer 640 may have a thickness of about 1 μm to about 500 μm.

The first heat insulation layer 620 may be disposed to form a step on the first heat conductive layer 610. In addition, the second heat insulating layer 640 may be disposed to form a step on the second heat conductive layer 630.

In addition, the first thermal conductive layer 610 and the second thermal conductive layer 630 may include a material having a relatively high thermal conductivity. The first heat insulating layer 620 and the second heat insulating layer 640 may include a material having a low thermal conductivity. That is, the first heat insulating layer 620 and the second heat insulating layer 640 may have a lower thermal conductivity than the first heat conductive layer 610 and the second heat conductive layer 630.

In addition, an insulator is used as the first heat conducting layer 610. An insulator or a conductor may be used as the second heat conductive layer 630.

The first heat conducting layer 610 may include aluminum oxide, titanium oxide, silicon oxide, or silicon nitride. In addition, a polymer doped with metal particles or inorganic particles may be used as the first heat conductive layer 610.

The second heat conducting layer 630 may include aluminum oxide, titanium oxide, silicon oxide, or silicon nitride. In addition, a polymer doped with metal particles or inorganic particles may be used as the second heat conductive layer 630.

In addition, the second thermal conductive layer 630 may include a conductive metal oxide. For example, the second heat conducting layer 630 may include indium tin oxide, indium zinc oxide, zinc oxide doped with aluminum, or indium tin zinc oxide. In addition, the second thermal conductive layer 630 may include a metal mesh.

The first heat insulating layer 620 and the second heat insulating layer 640 may include a polymer having a low thermal conductivity such as silicone resin, acrylic resin or epoxy resin. In addition, the first heat insulating layer 620 and the second heat insulating layer 640 may include pores. In more detail, an oxide film including pores may be used for the first heat insulating layer 620 and the second heat insulating layer 640.

The first heat conducting layer 610, the first heat insulating layer 620, the second heat conducting layer 630, and the second heat insulating layer 640 may be formed by a deposition process.

As described above, the heat dissipation unit 602 has been described as being composed of four layers, but is not limited thereto. That is, the heat dissipation unit 602 may be formed of two layers or six or more layers. That is, the heat dissipation unit 602 may be formed by stacking one or more heat conductive layers and one or more heat insulating layers to each other, and as a whole, six or more thin films.

The light conversion units 510, 520, and 530 are disposed on the heat radiating unit 602. The light conversion units 510, 520, and 530 are directly disposed on the heat radiating unit 602. The light conversion units 510, 520, and 530 are disposed directly on the top surface of the heat dissipation unit 602. In more detail, the light conversion units 510, 520, and 530 are disposed on an upper surface of the second heat insulation layer 640. The light converters 510, 520, and 530 may be directly disposed on an upper surface of the second heat insulation layer 640.

The capping unit 430 covers the light conversion units 510, 520, and 530. The capping unit 430 seals the light conversion units 510, 520, and 530. The capping unit 430 may include a curved surface to perform a lens function.

As described above, the light conversion units 510, 520, and 530 are disposed on the heat radiating unit 602. Since the heat radiating unit 602 emits heat generated from the light emitting unit 300 laterally, heat applied to the light conversion units 510, 520, and 530 may be reduced.

Therefore, the light emitting device package according to the embodiment may prevent deterioration of the light conversion particles 511, 521, and 531 included in the light conversion units 510, 520, and 530, and may have improved reliability and durability.

In addition, in the light emitting device package according to the embodiment, the light emitting unit 300 is disposed on the substrate 130, and the heat dissipating unit 602 is disposed on the light emitting unit 300. That is, since the heat dissipation unit 602 is disposed on the upper surface of the substrate 130, the heat dissipation unit 602 may be implemented in a heat dissipation structure in the form of a thin film. That is, since the heat dissipation unit 602 is disposed on the top, side, and bottom surfaces of the substrate 130, the heat dissipation unit 602 may have a stepped heat dissipation structure.

Therefore, the heat dissipation unit 602 formed on the substrate 130 may be thinner and have improved heat dissipation characteristics than the heat dissipation structure formed on the body portion of the cup structure.

Accordingly, the light emitting device package according to the embodiment may reduce the distance between the light converters 510, 520, and 530 and the light emitter 300. Therefore, the light emitting device package according to the embodiment may have a slimmer structure.

In addition, the features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (28)

A light emitting portion; And
A light conversion unit disposed in a path of light from the light emitting unit,
The light conversion unit
A first light conversion lens unit; And
And a second light conversion lens unit disposed next to the first light conversion lens unit. The light emitting device of claim 1, wherein the first light conversion lens unit and the second light conversion lens unit include a curved surface. The method of claim 1, wherein the first light conversion lens unit converts light from the light emitting unit into light of a first wavelength band,
And the second light conversion lens unit converts light from the light emitting unit into light of a second wavelength band. The method of claim 3, wherein the light conversion unit
And a third light conversion lens unit disposed next to the second light conversion lens unit to convert light from the light emitting unit into light of a third wavelength band. The light emitting device of claim 1, further comprising a capping unit interposed between the light emitting unit and the light conversion unit. The light emitting device of claim 5, wherein the heat transfer part comprises a plurality of transmission parts. The method of claim 5, further comprising a heat transfer unit disposed between the light emitting unit and the light conversion unit,
And the heat transfer part is disposed in the capping part. The light emitting device of claim 7, wherein the light conversion unit is coated on one surface of the capping part. A body portion in which a cavity is formed;
A light emitting part disposed in the cavity;
A first capping part disposed in the cavity and covering the light emitting part; And
And a plurality of light conversion lens parts disposed on one surface of the first capping part. The light emitting device of claim 9, further comprising a light transmitting heat transfer part interposed between the light emitting part and the first capping part. 10. The method of claim 9, further comprising a second capping portion covering the light conversion lens portion,
The first capping part has a higher thermal conductivity than the second capping part. The method of claim 9, wherein the first capping portion comprises a curved surface,
The light conversion lens unit is disposed on the curved surface of the first capping unit. The light emitting device of claim 9, wherein a transmissive region is formed between the light conversion lens units. The light emitting device of claim 9, wherein the light conversion lens parts have a diameter of about 10 μm to about 1 mm. A light emitting portion;
A capping part covering the light emitting part; And
Light emitting device comprising a light conversion pattern formed on one surface of the capping portion. The light emitting device of claim 15, wherein the light conversion pattern has a circular or rectangular shape. The light emitting device of claim 15, wherein the light conversion pattern comprises a curved surface convex from one surface of the capping portion. The method of claim 15, wherein the light conversion pattern is
First light conversion particles for converting light from the light emitting part into light in a first wavelength band; And
And a second light conversion particle for converting light from the light emitting portion into light of a second wavelength band. The method of claim 18, wherein the light emitting portion generates blue light,
The light conversion pattern further comprises a yellow phosphor. The method of claim 18,
The light conversion pattern includes third light conversion particles for converting the light into the light of the third wavelength band from the light emitting portion,
The light emitting device is a light emitting device for generating ultraviolet light. Board;
A light emitting part disposed on the substrate;
A heat dissipation unit covering the light emitting unit; And
Light emitting device comprising a light conversion unit disposed on the heat dissipation unit. The method of claim 21, wherein the heat dissipation unit
A first heat conducting layer covering the light emitting part; And
Light emitting device comprising a first heat insulating layer disposed on the first heat transfer unit. The method of claim 22, wherein the heat dissipation unit
A second heat conducting layer disposed on the first heat insulating layer; And
And a second heat insulating layer disposed on the second heat conductive layer. The light emitting device of claim 23, wherein the light conversion unit is disposed directly on the second heat insulating layer. The method of claim 22, wherein the first heat insulating layer covers a portion of the upper surface of the first heat conducting layer,
The first heat conducting layer
A first heat transfer part corresponding to the first heat insulation layer; And
And a first heat dissipation unit extending from the first heat transfer unit and exposed from the first heat insulating layer. The method of claim 25, wherein the second heat insulating layer covers a portion of the upper surface of the second heat conductive layer,
The second heat conducting layer
A second heat transfer part corresponding to the second heat insulation layer; And
And a second heat dissipation unit extending from the second heat transfer unit and exposed from the second heat insulating layer. The method of claim 22, wherein the thickness of the first thermal conductive layer is 1㎛ to 500㎛,
The first heat insulating layer has a thickness of 1㎛ 500㎛ light emitting device. The light emitting device of claim 21, wherein the heat dissipation part covers a side surface of the light emitting part.
KR1020110136915A 2011-11-08 2011-12-18 Light emitting apparatus KR101338704B1 (en)

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KR1020110136915A KR101338704B1 (en) 2011-12-18 2011-12-18 Light emitting apparatus
US14/357,091 US9249963B2 (en) 2011-11-08 2012-11-01 Light emitting device
PCT/KR2012/009140 WO2013069924A1 (en) 2011-11-08 2012-11-01 Light emitting device
CN201280066401.6A CN104040739B (en) 2011-11-08 2012-11-01 Light-emitting device
EP12848029.0A EP2777080B1 (en) 2011-11-08 2012-11-01 Light emitting device
TW101141216A TWI506831B (en) 2011-11-08 2012-11-06 Light emitting device

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