KR20130069266A - Light emitting apparatus - Google Patents
Light emitting apparatus Download PDFInfo
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- KR20130069266A KR20130069266A KR1020110136915A KR20110136915A KR20130069266A KR 20130069266 A KR20130069266 A KR 20130069266A KR 1020110136915 A KR1020110136915 A KR 1020110136915A KR 20110136915 A KR20110136915 A KR 20110136915A KR 20130069266 A KR20130069266 A KR 20130069266A
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- Prior art keywords
- light
- light emitting
- unit
- light conversion
- heat
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
A light emitting device is disclosed. The light emitting device includes a light emitting unit; And a light conversion unit disposed in a path of light from the light emitting unit, wherein the light conversion unit comprises: a first light conversion lens unit; And a second light conversion lens unit disposed next to the first light conversion lens unit.
Description
An embodiment relates to a light emitting device.
Recently, the manufacturing method of gallium nitride (GaN) -based white light emitting diodes (LEDs), which have been actively developed worldwide, is a single chip type method in which a fluorescent material is combined with a blue or UV LED chip to obtain white and multi-chip. It is divided into two ways of obtaining white by combining two or three LED chips with each other.
A typical method of implementing white light emitting diodes in a multi-chip form is to combine three chips of RGB. Each chip has an uneven operating voltage and the output of each chip changes according to the ambient temperature. Is showing a problem.
Due to the above problems, the multi-chip form is suitable for a special lighting purpose that requires the production of various colors by adjusting the brightness of each LED through the circuit configuration rather than the implementation of the white light emitting diode.
Therefore, a binary system combining a blue light emitting LED which is relatively easy to manufacture and has high efficiency as a method of implementing a white light emitting diode and a phosphor which is excited by the blue light emitting LED and emits yellow light is typically used. .
In a binary system, an yttrium aluminum garnet (YAG: Yttrium Aluminum Garnet) phosphor using a blue LED as an excitation light source and Ce3 + as a activator of rare earth trivalent ions, that is, a YAG: Ce phosphor, is emitted from the blue LED. White light emitting diodes in the form of excitation with light have been mainly used.
In addition, white light emitting diodes are being used in various types of packages according to their applications, and ultra-small light emitting diode devices and electronic displays, which are typically surface mounted devices (SMDs), which are applied to backlighting of mobile phones. And vertical lamp types for solid state display elements and image display.
On the other hand, as an index used in analyzing the characteristics of white light, there are a correlated color temperature (CCT) and a color rendering index (CRI).
Correlated color temperature (CCT) means that when an object shines with visible light and the color looks the same as the color of a black body radiating at a certain temperature, the temperature of the black body is equal to the temperature of the object. The higher the color temperature, the more dazzling and blueish white it is.
That is, even if the same white light, the color temperature is low, the color feels a little warmer, if the color temperature is high it feels cold. Accordingly, by adjusting the color temperature, it is possible to satisfy even the characteristics of special lighting requiring various colors.
In the case of the white light emitting diode using the conventional YAG: Ce phosphor, the color temperature was only 6000 to 8000K. In addition, the color rendering index (CRI) indicates the degree to which the color of the object is different when irradiated with sunlight and other artificially produced lights, and the CRI value is 100 when the color of the object is the same as in sunlight. It is defined as That is, the color rendering index (CRI) is an index indicating how close to the color of the object under the artificial light when irradiated with sunlight.
In other words, the more white light source that CRI approaches 100, the more the color of the object perceived by the human eye under sunlight.
Currently, CRI of incandescent bulb is over 80 and fluorescent lamp is over 75, whereas CRI of commercially available white LED shows about 70-75.
Therefore, the white LED using the conventional YAG: Ce phosphor has a problem that the color temperature and the color rendering index are rather low.
In addition, since only YAG: Ce phosphors are used, it is difficult to control color coordinates, color temperature, and color rendering index.
As such, in relation to a light emitting diode using a phosphor, Korean Laid-Open Patent Publication No. 10-2005-0098462 or the like is disclosed.
Embodiments provide a light emitting device having improved optical characteristics and reliability.
In one embodiment, a light emitting device includes: a light emitting unit; And a light conversion unit disposed in a path of light from the light emitting unit, wherein the light conversion unit comprises: a first light conversion lens unit; And a second light conversion lens unit disposed next to the first light conversion lens unit.
In one embodiment, a light emitting device includes: a body part in which a cavity is formed; A light emitting part disposed in the cavity; A first capping part disposed in the cavity and covering the light emitting part; And a plurality of light conversion lens parts disposed on one surface of the first capping part.
In one embodiment, a light emitting device includes: a light emitting unit; A capping part covering the light emitting part; And a light conversion pattern formed on one surface of the capping part.
In one embodiment, a light emitting device includes a substrate; A light emitting part disposed on the substrate; A heat dissipation unit covering the light emitting unit; And a light conversion unit disposed on the heat dissipation unit.
The light emitting device according to the exemplary embodiment may adjust characteristics such as a direction angle of light emitted for each wavelength band by using a plurality of light-changing lens parts. That is, light of a relatively short wavelength band may be emitted from the first light conversion lens unit, and light of a relatively long wavelength band may be emitted from the second light conversion lens unit.
In this case, the size, the radius of curvature, and the concentration of the light conversion particles may be appropriately adjusted. Accordingly, the light emitting device according to the embodiment may emit light having a desired characteristic for each wavelength band.
In addition, the light emitting device according to the embodiment may easily adjust the color coordinates by adjusting the size of the first light conversion lens unit and the size of the second light conversion lens unit.
In addition, the light emitting device according to the embodiment may form the light conversion pattern with the light conversion lens parts. Accordingly, the light emitting device according to the embodiment can emit light having a desired wavelength band at a desired position from the optical axis of the light emitting portion. That is, the light emitting device according to the embodiment can appropriately adjust the position according to the wavelength band to be converted using the light conversion pattern.
Therefore, the light emitting device according to the embodiment may have improved light emission characteristics.
In addition, the light conversion lens parts include a convex curved surface or the like. In particular, the light-changing lens parts may be convex in a direction away from the light emitting part. Accordingly, the contact area between the light conversion lens parts and the capping part covering the light conversion lens parts is increased, and heat of the light conversion lens parts can be easily released to the capping part.
Accordingly, the light emitting device according to the embodiment may reduce performance degradation due to heat, and may have improved reliability and durability.
1 is a perspective view illustrating a light emitting device package according to an embodiment.
FIG. 2 is a cross-sectional view showing a section cut along AA 'in FIG. 1; FIG.
3 is a view illustrating one cross section of the light emitting unit.
4 to 6 are plan views illustrating the light conversion unit.
7 is a cross-sectional view showing a light emitting device package according to another embodiment.
8 is a plan view illustrating the heat transfer unit.
9 is a cross-sectional view showing a light emitting device package according to another embodiment.
10 is a cross-sectional view showing a light emitting device package according to another embodiment.
11 is a cross-sectional view illustrating a light emitting device package according to still another embodiment.
In the description of the embodiments, it is described that each substrate, frame, sheet, layer or pattern is formed "on" or "under" each substrate, frame, sheet, In this case, "on" and "under " all include being formed either directly or indirectly through another element. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.
1 is a perspective view illustrating a light emitting device package according to an embodiment. FIG. 2 is a cross-sectional view illustrating a cross section taken along line AA ′ in FIG. 1. 3 is a view illustrating one cross section of the light emitting unit. 4 to 6 are plan views illustrating the light conversion unit.
1 to 6, a light emitting diode package according to an embodiment includes a
The
The
The
The shape of the cavity C may be formed in a cup shape, a concave container shape, or the like, and the surface thereof may be formed in a circular shape, a polygonal shape, or a random shape, but is not limited thereto.
The inner surface of the cavity C may be formed as a surface perpendicular or inclined with respect to the bottom surface of the cavity C in consideration of the light distribution angle of the light emitting diode package according to the embodiment.
The
The
The receiving
The receiving
The
The
Ends of the
The
The first
The
The
The
The
The
The first conductivity
The second conductivity
The
The
Alternatively, the
The
In addition, the
In addition, a reflective layer may be formed in the cavity C. The reflective layer may be disposed on an inner side surface of the cavity C. The reflective layer may be coated on the inner surface of the cavity (C). The reflective layer may include a highly reflective material, for example, white PSR (Photo Solder Resist) ink, silver (Ag), aluminum (Al), or the like.
The
The
The
The
The
The
In addition, the
Accordingly, white light may be formed by light converted by the
As illustrated in FIGS. 2 and 4, the
The first light
The first light
The first light
The first light
The first
The first
The shell nanocrystals may be formed of two or more layers. The shell nanocrystals are formed on the surface of the core nanocrystals. The quantum dot may convert the wavelength of the light incident on the core core crystal into a long wavelength through the shell nanocrystals forming the shell layer and increase the light efficiency.
The quantum dot may include at least one of a group II compound semiconductor, a group III compound semiconductor, a group V compound semiconductor, and a group VI compound semiconductor. More specifically, the core nanocrystals may include Cdse, InGaP, CdTe, CdS, ZnSe, ZnTe, ZnS, HgTe or HgS. The shell nanocrystals may include CuZnS, CdSe, CdTe, CdS, ZnSe, ZnTe, ZnS, HgTe or HgS. The diameter of the quantum dot may be 1 nm to 10 nm.
The wavelength of light emitted from the quantum dots can be controlled by the size of the quantum dots or the molar ratio of the molecular cluster compound and the nanoparticle precursor in the synthesis process. The organic ligand may include pyridine, mercapto alcohol, thiol, phosphine, phosphine oxide, and the like. The organic ligands serve to stabilize unstable quantum dots after synthesis. After synthesis, a dangling bond is formed on the outer periphery, and the quantum dots may become unstable due to the dangling bonds. However, one end of the organic ligand is in an unbonded state, and one end of the unbound organic ligand bonds with the dangling bond, thereby stabilizing the quantum dot.
Particularly, when the quantum dot has a size smaller than the Bohr radius of an exciton formed by electrons and holes excited by light, electricity or the like, a quantum confinement effect is generated to have a staggering energy level and an energy gap The size of the image is changed. Further, the charge is confined within the quantum dots, so that it has a high luminous efficiency.
Unlike general fluorescent dyes, the quantum dots vary in fluorescence wavelength depending on the particle size. That is, as the size of the particle becomes smaller, it emits light having a shorter wavelength, and the particle size can be adjusted to produce fluorescence in a visible light region of a desired wavelength. That is, the quantum dot used as the first
The quantum dot can be synthesized by a chemical wet process. Here, the chemical wet method is a method of growing particles by adding a precursor material to an organic solvent, and the quantum dots can be synthesized by a chemical wet method.
In addition, a green phosphor may be used as the first
The
The
The second light
In addition, the second light
The second light
The second light
The second light
The second
The second
In addition, a red phosphor may be used as the second
The
The
The third light
In addition, the third light
The third light
The third light
Alternatively, the third light
The third light
The third
The third
In addition, a blue phosphor may be used as the third
In contrast, when the
The
The
In addition, as illustrated in FIG. 4, a transmission area TA is disposed between the first light
The first light
Accordingly, optical characteristics of the first light
That is, the size, shape, and refractive index of the first light
For example, the light conversion lens portion that emits light in a relatively long wavelength range may be designed to have a small directivity, and the light conversion lens portion that emits light in a relatively short wavelength range may be designed to have a large orientation angle. have.
That is, the size, radius of curvature, and
In addition, the light emitting device according to the embodiment may adjust the size of the first light
5 and 6, the light
The light conversion pattern includes light
The light
In this case, the first light
The first light
Accordingly, the light emitting device according to the embodiment may emit light of a desired wavelength band at a desired position from the optical axis of the
In addition, the diameters of the first light
The
The
The
The light
Accordingly, the light emitting device according to the embodiment may reduce performance degradation due to heat, and may have improved reliability and durability.
In addition, as described above, the light emitting device according to the embodiment may emit white light having improved optical characteristics by using the light
7 is a cross-sectional view showing a light emitting device package according to another embodiment. 8 is a plan view illustrating the heat transfer unit. 9 is a cross-sectional view showing a light emitting device package according to another embodiment. In the description of the present embodiments, reference is made to the description of the above light emitting device packages. That is, the description of the foregoing light emitting device package may be essentially combined with the description of the embodiments, except for the changed part.
7 to 9, the light emitting diode package according to the present embodiment includes a
The
Accordingly, the
The
The
In addition, the first
In addition, as shown in FIG. 9, the
As such, the LED package according to the embodiment may effectively block and emit heat from the
Thus, the LED package according to the embodiment can have improved reliability and durability.
10 is a cross-sectional view showing a light emitting device package according to another embodiment. In the description of the present embodiments, reference is made to the description of the above light emitting device packages. That is, the description of the foregoing light emitting device package may be essentially combined with the description of the embodiments, except for the changed part.
Referring to FIG. 10, the
Light
Accordingly, the
Accordingly, the light emitting device package according to the present exemplary embodiment may freely adjust optical characteristics of the light
In addition, since the
Therefore, the light emitting device package according to the embodiment may have improved reliability and durability.
11 is a cross-sectional view illustrating a light emitting device package according to still another embodiment. In the description of the present embodiments, reference is made to the description of the above light emitting device packages. That is, the description of the foregoing light emitting device package may be essentially combined with the description of the embodiments, except for the changed part.
Referring to FIG. 11, the light emitting device package according to the present exemplary embodiment may include a
The
The
The
The
The
The
The
The first thermal
The first thermal
The first
The first
The first
Heat generated from the
The first
The first
The second
The second thermal
The second
The second
The second
The heat generated from the
The second
The second
The first
In addition, the first thermal
In addition, an insulator is used as the first
The first
The second
In addition, the second thermal
The first
The first
As described above, the
The
The
As described above, the
Therefore, the light emitting device package according to the embodiment may prevent deterioration of the
In addition, in the light emitting device package according to the embodiment, the
Therefore, the
Accordingly, the light emitting device package according to the embodiment may reduce the distance between the
In addition, the features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Claims (28)
A light conversion unit disposed in a path of light from the light emitting unit,
The light conversion unit
A first light conversion lens unit; And
And a second light conversion lens unit disposed next to the first light conversion lens unit.
And the second light conversion lens unit converts light from the light emitting unit into light of a second wavelength band.
And a third light conversion lens unit disposed next to the second light conversion lens unit to convert light from the light emitting unit into light of a third wavelength band.
And the heat transfer part is disposed in the capping part.
A light emitting part disposed in the cavity;
A first capping part disposed in the cavity and covering the light emitting part; And
And a plurality of light conversion lens parts disposed on one surface of the first capping part.
The first capping part has a higher thermal conductivity than the second capping part.
The light conversion lens unit is disposed on the curved surface of the first capping unit.
A capping part covering the light emitting part; And
Light emitting device comprising a light conversion pattern formed on one surface of the capping portion.
First light conversion particles for converting light from the light emitting part into light in a first wavelength band; And
And a second light conversion particle for converting light from the light emitting portion into light of a second wavelength band.
The light conversion pattern further comprises a yellow phosphor.
The light conversion pattern includes third light conversion particles for converting the light into the light of the third wavelength band from the light emitting portion,
The light emitting device is a light emitting device for generating ultraviolet light.
A light emitting part disposed on the substrate;
A heat dissipation unit covering the light emitting unit; And
Light emitting device comprising a light conversion unit disposed on the heat dissipation unit.
A first heat conducting layer covering the light emitting part; And
Light emitting device comprising a first heat insulating layer disposed on the first heat transfer unit.
A second heat conducting layer disposed on the first heat insulating layer; And
And a second heat insulating layer disposed on the second heat conductive layer.
The first heat conducting layer
A first heat transfer part corresponding to the first heat insulation layer; And
And a first heat dissipation unit extending from the first heat transfer unit and exposed from the first heat insulating layer.
The second heat conducting layer
A second heat transfer part corresponding to the second heat insulation layer; And
And a second heat dissipation unit extending from the second heat transfer unit and exposed from the second heat insulating layer.
The first heat insulating layer has a thickness of 1㎛ 500㎛ light emitting device.
Priority Applications (6)
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KR1020110136915A KR101338704B1 (en) | 2011-12-18 | 2011-12-18 | Light emitting apparatus |
US14/357,091 US9249963B2 (en) | 2011-11-08 | 2012-11-01 | Light emitting device |
PCT/KR2012/009140 WO2013069924A1 (en) | 2011-11-08 | 2012-11-01 | Light emitting device |
CN201280066401.6A CN104040739B (en) | 2011-11-08 | 2012-11-01 | Light-emitting device |
EP12848029.0A EP2777080B1 (en) | 2011-11-08 | 2012-11-01 | Light emitting device |
TW101141216A TWI506831B (en) | 2011-11-08 | 2012-11-06 | Light emitting device |
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KR1020110136915A KR101338704B1 (en) | 2011-12-18 | 2011-12-18 | Light emitting apparatus |
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KR101338704B1 KR101338704B1 (en) | 2013-12-06 |
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CN113013148A (en) * | 2015-05-07 | 2021-06-22 | 首尔伟傲世有限公司 | Light emitting device |
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KR102310805B1 (en) * | 2014-08-07 | 2021-10-08 | 엘지이노텍 주식회사 | Phosphor plate and lighting device including the same |
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DE102005030128B4 (en) | 2004-06-28 | 2011-02-03 | Kyocera Corp. | Light-emitting device and lighting device |
US8637883B2 (en) * | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
US8803171B2 (en) * | 2009-07-22 | 2014-08-12 | Koninklijke Philips N.V. | Reduced color over angle variation LEDs |
KR101655463B1 (en) * | 2010-03-26 | 2016-09-07 | 엘지이노텍 주식회사 | Light emitting device package and light unit having the same |
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CN113013148A (en) * | 2015-05-07 | 2021-06-22 | 首尔伟傲世有限公司 | Light emitting device |
CN113013148B (en) * | 2015-05-07 | 2024-04-26 | 首尔伟傲世有限公司 | Light emitting device |
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