KR20130052258A - Method for fabricating semiconductor device - Google Patents

Method for fabricating semiconductor device Download PDF

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Publication number
KR20130052258A
KR20130052258A KR1020110117608A KR20110117608A KR20130052258A KR 20130052258 A KR20130052258 A KR 20130052258A KR 1020110117608 A KR1020110117608 A KR 1020110117608A KR 20110117608 A KR20110117608 A KR 20110117608A KR 20130052258 A KR20130052258 A KR 20130052258A
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KR
South Korea
Prior art keywords
insulating film
conductive layer
semiconductor device
flowable
forming
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KR1020110117608A
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Korean (ko)
Inventor
정채오
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에스케이하이닉스 주식회사
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Priority to KR1020110117608A priority Critical patent/KR20130052258A/en
Publication of KR20130052258A publication Critical patent/KR20130052258A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: A method for manufacturing a semiconductor device is provided to stably form an insulation layer with a high insulation property by efficiently removing reactants from a flowable insulation layer. CONSTITUTION: A first conductive layer pattern(110A) and a second conductive layer pattern(120A) are formed on a substrate. A liner insulation layer(140) is formed on the substrate with a structure on which the first conductive layer pattern, the second conductive layer pattern, and a hard mask pattern are laminated. A flowable insulation layer(150) fills a space between the conductive layer patterns. The flowable insulation layer is processed with steam and is cured. A wet thermal process is performed on the flowable insulation layer.

Description

Manufacturing method of semiconductor device {METHOD FOR FABRICATING SEMICONDUCTOR DEVICE}

The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of forming an insulating film of a semiconductor device.

In general, a process of filling a space between conductive layer patterns such as metal wiring with an insulating layer is essential in manufacturing a semiconductor device, and at this time, a high density plasma (HDP) process having a high step coverage is mainly used. I use it.

However, as the degree of integration of semiconductor devices increases, design rules decrease, so that an insulating film is buried in openings such as holes and trenches having a high aspect ratio in a conventional high density plasma (HDP) process. There is a limit. Accordingly, a lot of researches on forming an insulating film using a fluid material.

On the other hand, although a spin-on-glass coating method having excellent flow characteristics has been proposed, it is difficult to secure subsequent heat treatment process conditions accompanying densification and stabilization of an insulating layer. In particular, there is a problem in that insulation characteristics are deteriorated due to the generation of voids and cracks in the insulating film in the heat treatment process, and thus a method of forming a fluid insulating film by chemical vapor deposition (CVD) has been developed.

1A and 1B are cross-sectional views illustrating a method of forming an insulating film of a semiconductor device according to the prior art, and FIG. 2 is an electron micrograph of the device of FIG. 1B.

Referring to FIG. 1A, a liner insulating layer 50 is formed on a substrate 10 having a structure in which a first conductive layer pattern 20, a second conductive layer pattern 30, and a hard mask pattern 40 are stacked. .

Referring to FIG. 1B, a flowable insulating layer 60 is formed on the liner insulating layer 50 to fill a space between a structure in which the first and second conductive layer patterns 20 and 30 and the hard mask pattern 40 are stacked. do.

The flowable insulating layer 60 may be formed of silazane, or the like, and may be converted into a silicon oxide layer SiO 2 through a subsequent heat treatment process. However, according to the related art, there is a problem in that the nitrogen (N) group, the hydrogen (H) group or the reaction products (N, H) thereof in the fluid insulating film 60 are not removed but remain to deteriorate the insulation characteristics.

Referring to FIG. 2, the nitrogen (N) group and the hydrogen (H) group, which remain in the space between the structures in which the first and second conductive layer patterns 20 and 30 and the hard mask pattern 40 are stacked, are bright. It appears as a spot of color.

Therefore, development of a method of converting a fluid insulating film into a silicon oxide film (SiO 2 ) free of nitrogen (N) groups, hydrogen (H) groups, and the like is required.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method of manufacturing a semiconductor device capable of stably forming an insulating film having excellent insulating properties by overcoming the embedding limit of the insulating film due to a reduction in design rules.

SUMMARY OF THE INVENTION A method of manufacturing a semiconductor device according to a first embodiment of the present invention for solving the above problems includes forming a conductive layer pattern on a substrate; Forming a fluid insulating film filling the space between the conductive layer patterns; Performing a water vapor treatment and a curing process on the flowable insulating film; And performing a wet heat treatment process on the water vapor treated and cured flowable insulating film.

In addition, a method of manufacturing a semiconductor device according to a second embodiment of the present invention for solving the above problems comprises the steps of forming a conductive layer pattern on a substrate; Forming a fluid insulating film filling the space between the conductive layer patterns; And performing a wet heat treatment process on the flowable insulating film, wherein forming the flowable insulating film includes: depositing a flowable material; Steam treatment; And repeating the cycle consisting of performing a curing process.

According to the method of manufacturing a semiconductor device according to the present invention, it is possible to stably form an insulating film having excellent insulating properties by overcoming the embedding limit of the insulating film due to the reduction of design rules.

1A and 1B are cross-sectional views illustrating a method of forming an insulating film of a semiconductor device according to the prior art.
2 is an electron micrograph of the device of FIG. 1B.
3A to 3F are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with a first embodiment of the present invention.
4A to 4D are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with a second embodiment of the present invention.

Hereinafter, the most preferred embodiment of the present invention will be described. In the drawings, the thickness and spacing are expressed for convenience of description and may be exaggerated compared to the actual physical thickness. In describing the present invention, known configurations irrespective of the gist of the present invention may be omitted. It should be noted that, in the case of adding the reference numerals to the constituent elements of the drawings, the same constituent elements have the same number as much as possible even if they are displayed on different drawings.

3A to 3F are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with a first embodiment of the present invention.

Referring to FIG. 3A, the first conductive layer 110, the second conductive layer 120, and the hard mask layer 130 are sequentially formed on the substrate 100 having a predetermined lower structure (not shown). .

The substrate 100 may be a semiconductor substrate such as single crystal silicon.

The first conductive layer 110 may be formed of a conductive material, for example, doped polysilicon, and the second conductive layer 120 may be formed of a conductive material, for example, a metal such as tungsten (W).

The hard mask layer 130 may be formed of a nitride film-based material, and may have a thickness sufficient to remain a predetermined thickness even after the etching process for forming the first and second conductive layer patterns described later is completed.

Referring to FIG. 3B, the hard mask layer 130 is selectively etched to form the hard mask pattern 130A. The hard mask pattern 130A may have a line shape extending in a direction crossing the present cross section, and a plurality of hard mask patterns 130A may be arranged in parallel.

Subsequently, the first and second conductive layers 110 and 120 are etched using the hard mask pattern 130A as an etch mask to form the first and second conductive layer patterns 110A and 120A. In this case, the first and second conductive layer patterns 110A and 120A may be gate lines, bit lines, or source lines.

Subsequently, a liner is formed on the substrate 100 on which a structure (hereinafter, referred to as a “laminated structure”) in which the first conductive layer pattern 110A, the second conductive layer pattern 120A, and the hard mask pattern 130A are stacked is formed. The insulating film 140 is formed.

Here, the liner insulating layer 140 is formed of an oxide-based material having excellent step coverage and film quality, and may be formed of a low pressure-tetra ethyl ortho silicate (LP-TEOS) or a thermal chemical vapor phase formed in a furnace. It may be made of a silicon oxide film (SiO 2 ) using an ozone (O 3 ) -TEOS reaction of a thermal chemical vapor deposition method. In addition, the liner insulating layer 140 may be formed by chemical vapor deposition (CVD) using trisilylamine as a precursor, ammonia (NH 3 ), oxygen (O 2 ), or the like as a reactant. have. In this case, the thickness of the liner insulating layer 140 may vary depending on the spacing between the laminated structures, and for example, may be formed to a thickness of about 40% to 60% of the spacing between the laminated structures or about 100 μs to 200 μs.

Meanwhile, before forming the liner insulating layer 140, a spacer nitride layer (not shown) may be additionally formed on the stack structure to protect the first and second conductive layer patterns 110A and 120A.

Referring to FIG. 3C, a flowable insulating layer 150 is formed on the liner insulating layer 140 to fill a space between the stacked structures. The flowable insulating layer 150 may be formed of a flowable material having a low content of nitrogen (N) to easily remove the nitrogen (N) group in a subsequent process.

The flowable insulating layer 150 may be trisilylamine having a fluidity as a precursor, nitrogen (N) such as water vapor (H 2 O), hydrogen peroxide (H 2 O 2 ), oxygen (O 2 ), ozone (O 3 ), and the like. (Silazane) formed by a chemical vapor deposition (CVD) method using a gas that does not contain a) group may be included, for example, may be formed to a thickness of about 3,000 kPa to 5,000 kPa. At this time, the flow rate of trisilylamine is about 400sccm to 700sccm, the flow rate of water vapor (H 2 O) and / or hydrogen peroxide (H 2 O 2 ) is about 2gram / min to 10gram / min, oxygen (O 2 ) and / or ozone The flow rate of (O 3 ) may be about 50 sccm to 150 sccm.

Referring to FIG. 3D, a curing process is performed to remove nitrogen (N) groups included in the flowable insulating layer 150.

Here, the curing process may be performed using ozone (O 3 ) at a relatively low temperature, for example, a temperature of about 150 ℃ to 200 ℃ and a pressure of about 400 Torr to 600 Torr. At this time, the flow rate of ozone (O 3 ) may proceed for about 30 seconds to 300 seconds to about 20,000 sccm to 30,000 sccm.

In particular, steam (H 2 O) treatment is performed in parallel during the curing process. At this time, the water vapor (H 2 O) the process so as to supply with a carrier gas (Carrier Gas) to vaporize H 2 O in a liquid state, the flow rate of the water vapor (H 2 O) is 2gram / min to 10gram / min 10 seconds to 60 seconds can proceed.

As a result of this process, reaction products (N, H), such as ammonia (NH 3 ), of the nitrogen (N) group and the hydrogen (H) group included in the flowable insulating layer 150 may be generated.

Referring to FIG. 3E, a purge process may be performed to first remove reaction products N and H of the nitrogen (N) group and the hydrogen (H) group included in the flowable insulating layer 150. In this case, the purge process may be performed for about 20 seconds to about 60 seconds under a pressure condition of about 1 mTorr to 9 mTorr.

In particular, performing a cycle (H 2 O) treatment, performing a purge process, performing a curing process, performing a purge process three times to repeat the cycle (Cycle) about 3 to 10 times Preferably, when the cycle is repeated, reaction products (N, H) of the nitrogen (N) group and the hydrogen (H) group included in the flowable insulating layer 150 may be more effectively removed. On the other hand, the cycle may be performed in-situ in one chamber (Chamber).

Referring to FIG. 3F, a heat treatment process is performed to secondarily remove reaction products (N, H) of nitrogen (N) and hydrogen (H) groups included in the flowable insulating film 150, and simultaneously remove the flowable insulating film 150. Densification.

Here, the heat treatment process may be carried out wet under a temperature of about 300 ° C. to 700 ° C. and a pressure of about 400 Torr to 700 Torr in a furnace of a catalytic water vapor generation (CWVG) type furnace. In particular, it is possible to heat-treat at several stages at intermediate temperatures without proceeding to the maximum temperature immediately after mounting the wafer, for example, heat treatment at 300 ° C. and heat treatment at 700 ° C. can be performed continuously. At this time, the temperature may be raised from 300 ° C to 700 ° C in a wet atmosphere, and the heat treatment time for each temperature may be about 60 minutes to about 120 minutes. In addition, the moisture fraction at 300 ° C. is about 2% to 10%, and the moisture fraction at 700 ° C. is about 80% to 90%. However, even at the same temperature, the moisture fraction may be changed in various steps.

Meanwhile, a pumping process is performed in parallel during the heat treatment process. In this case, the pumping process may be performed for about 20 seconds to 60 seconds under a pressure condition of 1mTorr to 9mTorr after the heat treatment at 300 ℃. In particular, it is preferable to repeat the cycle consisting of the step of performing a wet heat treatment at 300 ℃, the pumping process about 2 to 5 times, if the cycle is repeatedly performed nitrogen contained in the flowable insulating film 150 The reaction product (N, H) of the (N) group and the hydrogen (H) group can be more effectively removed.

As a result of this process, the flowable insulating film 150 can be converted into a silicon oxide film (SiO 2 ) having no nitrogen (N) group and hydrogen (H) group.

4A to 4D are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with a second embodiment of the present invention. In the description of the present embodiment, detailed description of parts substantially the same as those of the first embodiment will be omitted. First, the processes of FIGS. 3A and 3B are performed in the same manner as the first embodiment, and then the processes of FIG. 4A are performed.

Referring to FIG. 4A, a first fluid insulating layer 150A may be formed on the liner insulating layer 140 to partially fill the space between the stack structures. The first flowable insulating layer 150A may be formed of a flowable material having a low content of nitrogen (N) to easily remove the nitrogen (N) group in a subsequent process.

Here, the first fluid insulating film 150A includes trisilylamine having a fluidity as a precursor and nitrogen such as water vapor (H 2 O), hydrogen peroxide (H 2 O 2 ), oxygen (O 2 ), ozone (O 3 ), and the like. The gas containing no (N) group may include silazane formed by chemical vapor deposition (CVD), for example, and may be formed to a thickness of about 300 kPa to about 500 kPa. At this time, the flow rate of trisilylamine is about 400sccm to 700sccm, the flow rate of water vapor (H 2 O) and / or hydrogen peroxide (H 2 O 2 ) is about 2gram / min to 10gram / min, oxygen (O 2 ) and / or ozone The flow rate of (O 3 ) may be about 50 sccm to 150 sccm. Meanwhile, the first fluid insulating layer 150A may include nitrogen (N) and hydrogen (H) groups.

Referring to FIG. 4B, steam (H 2 O) treatment is performed to remove nitrogen (N) and hydrogen (H) groups included in the first flowable insulating film 150A.

Here, the water vapor (H 2 O) treatment may be carried out at a relatively low temperature, such as 50 ℃ to 150 ℃ temperature and 400 Torr to 600 Torr pressure in the curing equipment. At this time, the flow rate of the water vapor (H 2 O) can proceed to about 10 to 20 minutes to about 2 gram / min to 10 gram / min.

Subsequently, a curing process is performed on the first flow insulating film 150A treated with the water vapor (H 2 O).

Here, the curing process may be performed using ozone (O 3 ) under the same temperature and pressure as the water vapor (H 2 O) treatment. At this time, the flow rate of ozone (O 3 ) may be about 30 seconds to 300 seconds to about 20,000 sccm to 30,000 sccm, the water vapor (H 2 O) treatment and the curing process in one chamber (In -situ).

Referring to FIG. 4C, the second, third and fourth fluid insulating layers may be repeatedly formed by repeating the above-described steps of depositing the fluid material, performing a water vapor (H 2 O) treatment, and performing a curing process. (150B, 150C, 150D) are formed.

As a result of this process, the space between the laminated structures is completely filled by the first to fourth flowable insulating films 150A to 150D. On the other hand, in the present embodiment it is shown that the cycle consisting of the step of depositing the above-mentioned fluid material, the step of performing the water vapor (H 2 O) treatment, the step of performing the curing process is repeated four times, but the present invention is limited thereto. It doesn't work. In another embodiment, more or less, preferably 3 to 10 times can be repeated.

Referring to FIG. 4D, a heat treatment process is performed to remove reaction products (N, H) of nitrogen (N) and hydrogen (H) groups remaining in the first to fourth flowable insulating films 150A to 150D, and at the same time, the first To fourth flow insulating films 150A to 150D are densified.

Here, the heat treatment process may be performed in a catalytic steam generation (CWVG) furnace at a temperature of about 300 ℃ to 700 ℃ and a pressure of about 400 Torr to 700 Torr. In particular, it is possible to heat-treat at several stages at intermediate temperatures without proceeding to the maximum temperature immediately after mounting the wafer, for example, heat treatment at 300 ° C. and heat treatment at 700 ° C. can be performed continuously. At this time, the temperature may be raised from 300 ° C to 700 ° C in a wet atmosphere, and the heat treatment time for each temperature may be about 60 minutes to about 120 minutes. In addition, the moisture fraction at 300 ° C is about 2% to 10%, the moisture fraction at 700 ° C is about 80% to 90%, but even at the same temperature can be carried out in different steps by varying the moisture fraction.

As a result of this process, the flowable insulating film 150 including the first to fourth flowable insulating films 150A to 150D may be converted into a silicon oxide film (SiO 2 ) having no nitrogen (N) group and hydrogen (H) group.

In the second embodiment described above, the flowable insulating layer 150 is formed by repeatedly performing a cycle including depositing a flowable material, performing a water vapor (H 2 O) treatment, and performing a curing process. There is a difference from the embodiment.

According to the method for manufacturing a semiconductor device according to the first and second embodiments of the present invention described above, a wet heat treatment step is performed after depositing a flowable material having a low nitrogen (N) content and then performing a water vapor treatment and curing in parallel. By performing the above, the flowable insulating film can be converted into a silicon oxide film (SiO 2 ) having no nitrogen (N) group, hydrogen (H) group, or the like. Accordingly, it is possible to overcome the embedding limit of the insulating film due to the reduction of the design rule, and to form an insulating film having excellent insulating properties stably, thereby improving the reliability of the semiconductor device.

It should be noted that the technical spirit of the present invention has been specifically described in accordance with the above-described preferred embodiments, but the above-described embodiments are intended to be illustrative and not restrictive. In addition, it will be understood by those of ordinary skill in the art that various embodiments are possible within the scope of the technical idea of the present invention.

100 substrate 110A first conductive layer pattern
120A: second conductive layer pattern 130A: hard mask pattern
140: liner insulating film 150: flowable insulating film

Claims (5)

Forming a conductive layer pattern on the substrate;
Forming a fluid insulating film filling the space between the conductive layer patterns;
Performing a water vapor treatment and a curing process on the flowable insulating film; And
Performing a wet heat treatment process on the water vapor treated and cured flowable insulating film;
The manufacturing method of a semiconductor device.
The method according to claim 1,
The steam treatment and curing step is performed,
Performing parallel purge process
The manufacturing method of a semiconductor device.
3. The method according to claim 1 or 2,
Performing the wet heat treatment process,
Performing the pumping process in parallel
The manufacturing method of a semiconductor device.
Forming a conductive layer pattern on the substrate;
Forming a fluid insulating film filling the space between the conductive layer patterns; And
Performing a wet heat treatment process on the flowable insulating film,
The forming of the flow insulating film,
Depositing a flowable material;
Steam treatment; And
Repeating the cycle consisting of the step of performing the curing process
The manufacturing method of a semiconductor device.
The method according to claim 1 or 4,
The forming of the flow insulating film,
Using a nitrogen-free reactant
The manufacturing method of a semiconductor device.
KR1020110117608A 2011-11-11 2011-11-11 Method for fabricating semiconductor device KR20130052258A (en)

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