KR20130049506A - Etching solution composition for a titanium nitride layer and method for etching the titanium nitride layer using the same - Google Patents

Etching solution composition for a titanium nitride layer and method for etching the titanium nitride layer using the same Download PDF

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KR20130049506A
KR20130049506A KR1020110114583A KR20110114583A KR20130049506A KR 20130049506 A KR20130049506 A KR 20130049506A KR 1020110114583 A KR1020110114583 A KR 1020110114583A KR 20110114583 A KR20110114583 A KR 20110114583A KR 20130049506 A KR20130049506 A KR 20130049506A
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titanium nitride
etching
nitride film
composition
compound
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KR1020110114583A
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Korean (ko)
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명중재
권기진
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동우 화인켐 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: An etching solution composition for a titanium nitride layer is provided to have excellent etching performance, to suppress etching of tungsten-based metals, thereby selectively etching metals when manufacturing a semiconductor device. CONSTITUTION: An etching solution composition for a titanium nitride layer comprises 0.1-2 weight% of nitride acid, 1-5 weight% of fluoroboric acid, 0.005-1 weight% of an oxidant, and residual deionized water, and additionally comprises 0.1-5 weight% of a basic compound. The oxidant is hydrogen peroxides and/or persulfate salts compound. The basic compound comprises aliphatic amine, aromatic amine, quaternary hydroxide salt, and N-containing cyclic compound. A manufacturing method of an electronic device comprises a step of etching a titanium nitride metal using the etching solution composition. [Reference numerals] (AA) Deposit W on TiN(substrate/oxid/TiN/W structure); (BB) W etching: generation of an uneven layer to the TiN layer; (CC) TiN etching: balance adjustable etching to the W layer

Description

Titanium nitride film etchant composition and method for etching titanium nitride film using the same {ETCHING SOLUTION COMPOSITION FOR A TITANIUM NITRIDE LAYER AND METHOD FOR ETCHING THE TITANIUM NITRIDE LAYER USING THE SAME}

The present invention relates to a titanium nitride film etching liquid composition and an etching method of a titanium nitride film using the same. In particular, the present invention relates to an etching liquid composition having excellent selective etching ability of titanium nitride and titanium nitride-based metal, and an etching method of a titanium nitride film using the same.

Titanium nitride (TiN), a titanium-based metal, is used for semiconductor devices, liquid crystal displays, MEMS (Micro Electro Mechanical Systems) devices, printed wiring boards, and the like as a base layer and a cap layer of precious metals, aluminum (Al), and copper (Cu) wiring. Moreover, in a semiconductor device, it may be used as a barrier metal and a gate metal.

Along with the titanium nitride or titanium nitride-based metal, tungsten or tungsten-based metals are used for liquid crystal displays, gate electrodes of thin film transistors of semiconductor devices, wiring, barrier layers, contact holes, via holes, and the like. It is also used as a tungsten heater in the field of MEMS (Micro Electro Mechanical Systems).

In particular, a nitride film such as TiN serves to prevent etching of the underlying material by inhibiting etching from the etchant composition as a barrier layer. Therefore, as a known etchant, it is difficult to etch a nitride film such as TiN. Thus, a method of removing the etchant using a chemical mechanical polishing (CMP) method that adds the chemical properties of the etchant and the physical effects of polishing is generally used.

In the case of CMP, the process is complicated, there is a limitation in the application of the process, there are many sources of other pollution, and the cost is inefficient because it is higher than the general wet process.

Accordingly, the development of an etchant composition capable of removing TiN through a wet treatment method is required. When the etchant composition of the present invention is used, the titanium nitride film is efficiently removed while controlling the etching amount of tungsten used in a process such as a via hole. It can be effectively used in device manufacturing processes such as semiconductors.

There is a Korean Patent Publication No. 10-2009-0049366 as a conventional etching solution for the wet etching. The etchant is a nitride film etching liquid composition comprising a hydroxycarboxylic acid compound, a fluorine-based compound, an oxidizing agent, and water, an etching solution composition for selectively etching SiON, SiN-based nitride film with respect to the polysilicon film, or selective etching function for titanium nitride There is a problem that does not represent.

In addition, the Republic of Korea Patent Publication No. 10-2010-0080761 provides an etchant comprising a fluorine compound, an oxidizing agent (nitric acid), water, an additional oxidizing agent, the etchant is titanium (Ti) or aluminum (Al) and alloys thereof (Al -Ti) as a batch etching solution does not have an etching function for tartan nitride, there is a problem that does not exhibit a selective etching function for this.

Accordingly, in the manufacturing process of the semiconductor device, the liquid crystal display device, and the MEMS device, when etching titanium nitride, development of an etchant composition capable of selective eating without a etching function for tungsten or tungsten alloy is required.

KR 10-2009-0049366 A KR 10-2010-0080761 A

Disclosure of Invention The present invention is to solve the problems of the prior art as described above. A titanium nitride film etchant having an excellent etching force with respect to a titanium nitride metal at the time of etching a semiconductor device and an etching inhibiting power with respect to a tungsten metal An object of the present invention is to provide a composition and an etching method of a titanium nitride film using the same.

The present invention provides a titanium nitride film etchant composition comprising (a) nitric acid, (b) fluoroboric acid, (c) oxidant and (d) residual deionized water.

In another aspect, the present invention provides a titanium nitride film etchant composition further comprising (e) a basic compound in the titanium nitride film etchant composition.

In addition, the present invention provides a method for manufacturing an electronic device, comprising the step of etching the titanium nitride-based metal by the titanium nitride film etching liquid composition.

        The titanium nitride film etchant composition of the present invention is not only excellent in the etching ability of the titanium nitride-based metal, but also can suppress the etching of the tungsten-based metal, so that the titanium nitride film etchant can be selectively etched according to the metal at the time of manufacturing the semiconductor device.

1 is a photograph of a process of etching a titanium nitride film and a tungsten film using the etchant composition of the present invention.

The titanium nitride film etchant composition of the present invention comprises (a) nitric acid, (b) fluoroboric acid, (c) oxidizing agent and (d) residual deionized water, and preferably further comprises (e) a basic compound. Can be. Each component is demonstrated below.

(a) nitric acid

The nitric acid (a) has the effect of oxidizing the titanium nitride and etching the oxidized titanium nitride by the properties of the oxidant and the acidic properties. By adding to the titanium nitride film etchant composition in the present invention it was confirmed that the etching effect of the titanium nitride film can be implemented.

The (a) nitric acid contained in the composition is not particularly limited, and the (a) silver nitrate is preferably included in an amount of 0.1 wt% to 2 wt% based on the total amount of the composition. If the amount is less than 0.1 wt%, the etching ability of the titanium nitride film is decreased, and if it is more than 2% by weight, the etching amount of the tungsten film is increased, thereby decreasing the function of selective etching.

(b) fluoroboric acid

(B) Fluoroboric acid is a strong acid represented by HBF 4 , and serves to remove the oxidized nitride film surface layer by contact between the oxidant and the nitride film. In addition, it serves to remove contaminants on the substrate, that is, fine dust. By adding to the titanium nitride film etching composition in the present invention it was confirmed that the etching effect of the titanium nitride film can be implemented.

(B) fluoroboric acid contained in the composition is not particularly limited, and may be increased or decreased depending on the object to be removed and the removal conditions, and (b) fluoroboric acid may be present in an amount of 1% by weight to 5% by weight based on the total weight of the composition. It is preferable to include. In the case of less than 1% by weight, the etching ability of the titanium nitride film is reduced, and in the case of more than 5% by weight, the additional effect is not large due to the increase in the amount added, and may cause an increase in corrosion of the polysilicon film.

(c) oxidizing agent

The (c) oxidant has an effect of increasing the amount of etching with respect to titanium nitride. By adding to the titanium nitride film etchant composition in the present invention it was confirmed that the etching effect of the titanium nitride film can be implemented.

Examples of the oxidizing agent included in the composition include hydrogen peroxide, persulfate compounds, and metal salt compounds. Examples of the persulfate compounds include ammonium persulfate, sodium persulfate, potassium persulfate, and the like. These can be mentioned, These can be used individually or in mixture of 2 or more types.

The (c) oxidant is preferably included in 0.005% by weight to 1% by weight relative to the total weight of the composition. If the amount is less than 0.005% by weight, the etching performance of the titanium nitride film may be degraded. If the amount is more than 1% by weight, the oxidizing power may be increased, thereby making it difficult to obtain a desirable etching selectivity by changing the etching amount of the nitride film.

 (d) deionized water

The (d) deionized water contained in the tungsten film removal composition of the present invention is used as a solvent for the above (a) nitric acid, (b) fuluroboric acid and (c) oxidizing agent. The (d) deionized water is preferably included in the remaining amount relative to the total weight of the composition.

(e) basic compounds

The basic compound (e) includes aliphatic amines, aromatic amines, quaternary salt hydroxides, and cyclic compounds containing N. Examples of the aliphatic amines include alkylamines and alcohol amines, and alkylamines include methylamines. , Ethylamine, propyl amine, methylethylamine and the like, and alcohol amines include mono-ethanolamine, di-ethanolamine, or tri-ethanolamine, monoisopropanolamine, butanolamine ethyldiethanolamine, and the like. Examples include aniline, o-toluidine, 2,4,6-trimethylaniline, N-methylaniline, and the like, and quaternary salt hydroxides include tetramethylammonium hydroxide and tetraethylammonium hydroxide. Examples of the cyclic compound including a morpholine compound such as morpholine, N-methyl morpholine, 2,6-dimethyl morpholine, N-ethyl morpholine, 4-methyl morpholine N-oxide, and the like Or as a combination of two or more may be mixed. In particular, the morpholine compound is a compound containing O (CH 2 CH 2 ) 2 NH and has a slightly alkaline pKa value of about 8 to 10.

The amount of tungsten etching may be high due to acidic properties such as nitric acid used in the present invention, and the alkaline properties of the basic compound may weaken the acidity of the composition to reduce the etching of tungsten.

The content of the (e) basic compound is not particularly limited, but may be increased or decreased depending on the object to be removed and the removal conditions, and may be included in an amount of 0.1 wt% to 5 wt% with respect to the total weight of the composition, and 0.5 wt% to 3 wt%. More preferred is weight percent. If less than 0.1% by weight, the etching amount of the tungsten decreases the effect, if it exceeds 5% by weight causes a reduction in the amount of titanium nitride may be difficult to etch the preferred titanium nitride, it may be difficult to obtain the desired etching selectivity.

The titanium nitride film etching method mentioned above may be performed by a method commonly known in the art. For example, deposition, spraying, or a method using deposition and spraying may be used, in which case, as a visual condition, the temperature is usually 30 to 80 ° C, preferably 50 to 70 ° C, and deposition, spraying, or deposition and spraying The time is usually 30 seconds to 10 minutes, preferably 1 minute to 5 minutes. However, these conditions are not strictly applied and can be selected as easy or suitable conditions by those skilled in the art.

Hereinafter, the present invention will be described in more detail using examples, comparative examples, and experimental examples. However, the following Examples, Comparative Examples and Experimental Examples are for illustrating the present invention, the present invention is not limited to the following Examples, Comparative Examples and Experimental Examples can be variously modified and changed.

Examples 1-3 and Comparative Examples 1-5: Preparation of titanium nitride film etching liquid composition

The titanium nitride film etchant composition was prepared by mixing the components and contents shown in Table 1 below. All of the units of content in Table 1 are by weight.

nitric acid FBA APS Basic compound water Morpholine NMO Example-1 2 4.5 0.03 Balance Example-2 2 4.5 0.1 Balance Example-3 2 One 0.08 Balance Example-4 One 5 0.2 Balance Example 5 One 3 0.03 Balance Example-6 One 3 0.7 Balance Example-7 2 4 0.1 Balance Example-8 2 4 0.5 Balance Example-9 0.5 2 0.6 Balance Example-10 0.5 2 0.05 Balance Example-11 0.5 2 0.05 0.5 Balance Example-12 0.5 2 0.05 1.5 Balance Example-13 0.5 2 0.05 3 Balance Example-14 One 5 0.2 One Balance Example-15 One 5 0.2 3 Balance Example-16 One 5 0.2 2 One Balance Comparative Example 1 2.5 2 Balance Comparative Example 2 4 0.1 Balance Comparative Example 3 3 0.1 Balance

FBA: fluoroboric acid

APS: Ammonium Persulfate

NMO: 4-methylmorpholine N-oxide (50%) solution

Experimental Example 1 Evaluation of Titanium Nitride and Tungsten Membrane Etching Ability

The etching ability evaluation of the titanium nitride film etching liquid composition on the titanium nitride film was performed by depositing a titanium nitride film on the deposited oxide layer on the substrate, and then depositing a tungsten film on the deposited oxide layer on the substrate, whereby the nitride film and the tungsten film were respectively 200Å. , Using a substrate laminated at 500 mm 3. First, the substrate was deposited at 60 ° C. for 2 minutes on the titanium nitride film etching liquid composition prepared in Examples 1 to 16 and Comparative Examples 1 to 3 on the substrate on which the titanium nitride film and tungsten were laminated, and then washed and dried. The substrate was etched. The thickness of the titanium nitride film and tungsten film etched from the substrate was measured using a 4-point probe device (Changmin Tech CMT series). The results are shown in Table 2 below.

Etching amount of titanium nitride film (Å / min) Etching amount of tungsten
(Å / min) Example-1 50 15 Example-2 61 18 Example-3 47 13 Example-4 57 16 Example 5 40 15 Example-6 66 20 Example-7 63 21 Example-8 67 21 Example-9 71 23 Example-10 58 12 Example-11 54 8 Example-12 47 6 Example-13 44 4 Example-14 51 9 Example-15 43 6 Example-16 45 5 Comparative Example 1 20 23 Comparative Example 2 5 4 Comparative Example 3 11 15

As confirmed in Table 2, with respect to the total weight of the composition, 0.1 to 2% by weight of nitric acid, 1 to 5% by weight of fluoroboric acid, and 0.005% by weight to ammonium persulfate The titanium nitride film etching compositions of Examples 1 to 16, which contain 1% by weight, exhibit excellent etching performance with respect to the titanium nitride film, whereas Comparative Examples 1 to 3, which do not satisfy the above range, exhibit poor etching performance. In addition, it can be seen that Examples 1 to 16 using nitric acid at 2 wt% or less suppressed etching of tungsten as compared to Comparative Examples 1 and 3 using nitric acid at 2 wt% or more.

In addition, as confirmed in Table 2, the titanium nitride film etchant composition of Examples 11 to 16 further comprising a basic compound in an amount of 0.1% by weight to 5% by weight based on the total weight of the composition. It can be seen that it appeared.

From these results, the titanium nitride film etchant composition of the present invention not only has excellent etching ability of the titanium nitride film, but also has excellent ability in the corrosion resistance of the tungsten film, and it can be confirmed that the selective etching performance of the tungsten film and the titanium nitride film is excellent. .

Claims (18)

A titanium nitride film etchant composition comprising (a) nitric acid, (b) fluoroboric acid, (c) oxidant and (d) deionized water. The method according to claim 1,
(e) A titanium nitride film etchant composition further comprising a basic compound. The method according to claim 1,
In the total amount of the composition,
(A) 0.1 wt% to 2 wt% of nitric acid;
(B) 1% to 5% by weight of fluoroboric acid;
0.005% to 1% by weight of the oxidizing agent (c); And
The titanium nitride film etchant composition, characterized in that (d) comprises deionized water as a residual amount. The method according to claim 2,
(e) Titanium nitride film etching solution composition, characterized in that it further comprises 0.1 to 5% by weight of the basic compound. The method according to claim 1 or 3,
The tungsten film etchant composition according to claim (c), wherein the oxidizing agent is hydrogen peroxide. The method according to claim 1 or 3,
(C) the oxidizing agent is a tungsten film etching solution composition, characterized in that the persulfate compound. The method of claim 6,
The persulfate compound is a tungsten film etching solution composition, characterized in that any one or a mixture thereof selected from the group consisting of ammonium persulfate, sodium persulfate, potassium persulfate. The method according to claim 1 or 3,
The tungsten film etchant composition according to claim (c), wherein the oxidizing agent is a metal salt compound. The method according to claim 8,
The metal salt compound is a tungsten film etching solution composition, characterized in that any one or a mixture thereof selected from the group consisting of iron chloride and copper chloride. The method according to claim 2,
The basic compound is a titanium nitride film etchant composition, characterized in that the cyclic compound containing an aliphatic amine, aromatic amine, quaternary salt hydroxide, and N. 12. The method of claim 10,
The aliphatic amines are titanium nitride film etching solution composition, characterized in that any one or a mixture thereof selected from the group consisting of alkylamine, alcohol amine. The method according to claim 11,
The alkylamine is titanium nitride film etching liquid composition, characterized in that any one or a mixture thereof selected from the group consisting of methylamine, ethylamine, propyl amine, methylethylamine. The method according to claim 11,
The alcohol amine is a titanium nitride film, characterized in that any one or a mixture thereof selected from the group consisting of mono-ethanolamine, di-ethanolamine, tri-ethanolamine, monoisopropanolamine, butanolamine, ethyl diethanolamine Etch solution composition. 12. The method of claim 10,
The aromatic amine is any one or a mixture thereof selected from the group consisting of aniline, o-toluidine, 2,4,6-trimethylaniline, and N-methylaniline. 12. The method of claim 10,
The quaternary salt hydroxide is titanium nitride film etching liquid composition, characterized in that any one or a mixture thereof selected from the group consisting of tetramethylammonium hydroxide and tetraethylammonium hydroxide. 12. The method of claim 10,
The cyclic compound containing N is a titanium nitride film etching liquid composition, characterized in that the morpholine compound. The method of claim 16,
The morpholine compound is any one selected from the group consisting of morpholine, N-methyl morpholine, 2,6-dimethyl morpholine, N-ethyl morpholine, 4-methyl morpholine N-oxide or a mixture thereof Titanium nitride film etching solution composition, characterized in that. A method of manufacturing an electronic device, comprising the step of etching a titanium nitride metal with the titanium nitride film etchant composition of claim 1.
KR1020110114583A 2011-11-04 2011-11-04 Etching solution composition for a titanium nitride layer and method for etching the titanium nitride layer using the same KR20130049506A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150071790A (en) * 2013-12-18 2015-06-29 동우 화인켐 주식회사 Etching solution composition for a metal nitride layer
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
KR20200107139A (en) * 2019-03-06 2020-09-16 동우 화인켐 주식회사 Etchant composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150071790A (en) * 2013-12-18 2015-06-29 동우 화인켐 주식회사 Etching solution composition for a metal nitride layer
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
KR20200107139A (en) * 2019-03-06 2020-09-16 동우 화인켐 주식회사 Etchant composition

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