KR20130047137A - Fabricating method for light emitting device package - Google Patents

Fabricating method for light emitting device package Download PDF

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Publication number
KR20130047137A
KR20130047137A KR1020110111974A KR20110111974A KR20130047137A KR 20130047137 A KR20130047137 A KR 20130047137A KR 1020110111974 A KR1020110111974 A KR 1020110111974A KR 20110111974 A KR20110111974 A KR 20110111974A KR 20130047137 A KR20130047137 A KR 20130047137A
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KR
South Korea
Prior art keywords
light emitting
emitting device
device package
manufacturing
substrate
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KR1020110111974A
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Korean (ko)
Inventor
권지나
김재욱
권호기
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엘지이노텍 주식회사
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Priority to KR1020110111974A priority Critical patent/KR20130047137A/en
Publication of KR20130047137A publication Critical patent/KR20130047137A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/631—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using photolysis and investigating photolysed fragments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Led Device Packages (AREA)

Abstract

A method of manufacturing a light emitting device package according to an embodiment includes bonding the light emitting device to a substrate; And irradiating photolysis wavelength light onto the substrate.

Description

Manufacturing method of light emitting device package {FABRICATING METHOD FOR LIGHT EMITTING DEVICE PACKAGE}

The embodiment relates to a method of manufacturing a light emitting device package.

The semiconductor package manufacturing process includes a sawing process for cutting a wafer to individualize the semiconductor chip, a die bonding process for attaching the individualized semiconductor chip to the substrate, and a wire for electrically connecting the semiconductor chip and the lead of the substrate. Bonding process, molding process surrounding the semiconductor chip to protect the internal circuit and other components of the semiconductor chip, trim / form process of cutting and bending the lead, the process It consists of a test process to check whether the finished package is defective.

During the manufacturing process, there is a problem that the body of the semiconductor package or the lead frame is oxidized or reacts with the contaminants invaded in the die bonding process or the wire bonding process, thereby causing discoloration, thereby lowering the reliability of the light emitting device package.

The embodiment relates to a method of manufacturing a light emitting device package having improved reliability.

A method of manufacturing a light emitting device package according to an embodiment includes bonding the light emitting device to a substrate; And irradiating photolysis wavelength light onto the substrate.

The photolysis wavelength light may include light generated from a UV light emitting diode or a blue light emitting diode.

The wavelength of the photolysis wavelength light may be 360 ~ 475nm.

In the step of irradiating the photolysis wavelength light, contaminants present in the light emitting device package may be photo decomposition.

Irradiating the photolysis wavelength light may be performed for 1 to 24 hours.

After bonding the light emitting device to the substrate, the method may further include electrically connecting the light emitting device to the substrate using a wire.

Bonding the light emitting device to a substrate may include one of a paste bonding using an adhesive, an eutectic bonding, or a flip chip bonding.

The substrate may comprise a lead frame, a circuit board or a package body.

The method may further include forming a molding part to cover the light emitting device.

The molding part may include a phosphor.

The molding part may have a flat surface or a dome shape.

The adhesive may comprise Ag paste, Si paste, or epoxy.

The eutectic bonding may use Au-Sn metal.

The phosphor may include a garnet-based phosphor, a silicate-based phosphor, a nitride-based phosphor, or an oxynitride-based phosphor.

The method may further include separating the light emitting device package array into individual package units.

According to the embodiment, the light emitting device package may be manufactured by preventing discoloration of the body or the lead frame of the light emitting device package and improving the reliability.

1 is a flowchart illustrating an embodiment of a method of manufacturing a light emitting device package;
2A to 2D are views illustrating a process of bonding a light emitting device to a substrate;
3A to 3C are diagrams illustrating a wire bonding process of electrically connecting a light emitting device and a substrate by using wires.
4 is a view showing a process of irradiating photolysis wavelength light onto a light emitting device package;
5A and 5B are views illustrating a molding part forming process.
FIG. 6 is a graph comparing light intensity with time of a light emitting device package and a light emitting device package according to an embodiment including a photolysis wavelength light irradiation process.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the (up) or down (on) or under) includes two elements in which the two elements are in direct contact with each other or one or more other elements are formed indirectly between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

In the drawings, the thickness or size of each component is exaggerated, omitted, or schematically illustrated for convenience and clarity of description, and does not necessarily reflect the actual size.

1 is a flowchart illustrating an embodiment of a method of manufacturing a light emitting device package.

In one embodiment, a method of manufacturing a light emitting device package includes bonding an individual light emitting device to a substrate (S110), electrically connecting the light emitting device to a substrate using a wire (S120), and irradiating short wavelength light. (S130), forming a molding unit to cover the light emitting device (S140), separating the light emitting device package array into individual package units (S150), and testing whether the finished light emitting device package is defective. Step S160 is included.

The step (S120) of electrically connecting the light emitting device and the substrate using the wire may be omitted according to the bonding method in the step (S110) of bonding the individualized light emitting device to the substrate. This will be described later.

2A to 2D illustrate a process of bonding a light emitting device to a substrate.

The process of bonding the light emitting device to the substrate is also referred to as a die bonding process, and attaches the individualized light emitting device 200 to the substrate using a pick-up tool 230 to mechanically mount the light emitting device and the substrate. It is a process of connecting red and / or electrically (S110).

Here, the substrate may include a lead frame, a circuit board or a package body.

The die bonding process may include paste bonding using bonding agent, eutectic bonding, or flip chip bonding.

Referring to FIG. 2A, the pickup tool 230 may pick up the light emitting device 200 and bond it to the first lead frame 221 installed in the package body 210.

The package body 210 may include a silicon material, a synthetic resin material, or a metal material, and may include a cavity 211.

If the package body 210 is made of a conductive material such as a metal material, although not shown, an insulating layer is coated on the surface of the package body 210 to prevent an electrical short between the first and second lead frames 221 and 222. can do.

Sidewalls and bottom surfaces of the cavity 211 and at least a portion of the first and second lead frames 221 and 222 may be coated with a material having excellent reflectance to reflect light generated from the light emitting device 200. For example, it may be coated with silver (Ag), aluminum (Al), an alloy containing silver, or an alloy containing aluminum.

Light generated from the light emitting device 200 is reflected from the side wall of the cavity 211 of the package body 210 or reflected from the bottom surface of the cavity 211 or the first and second lead frames 221 and 222 to the upper portion of the package. By emitting, the light extraction efficiency of the package can be improved.

The light emitting device 220 may be attached to the first lead frame 221 using the bonding member 240.

The first lead frame 221 and the second lead frame 222 are electrically separated from each other, and supplies a current to the light emitting device 200. In addition, the first lead frame 221 and the second lead frame 222 may increase the light efficiency by reflecting the light generated from the light emitting device 200, the heat generated by the light emitting device 200 Can be discharged to the outside.

The bonding member 240 may be Ag paste, Si paste, or epoxy in the case of paste bonding using an adhesive. Alternatively, Ag paste or Si paste containing epoxy may be used.

Ag paste is conductive and Si paste and epoxy may be non-conductive.

As shown in FIG. 2A, when the light emitting device 200 is bonded to the first lead frame 221, a conductive paste may be used since the light emitting device 200 and the first lead frame 221 must be directly energized. .

In addition, the bonding member 240 may be Au—Sn metal in the case of eutectic bonding. Since the eutectic bonding has high thermal conductivity, heat generated from the light emitting device 200 may be transferred to the package body 210 to be released to the outside, thereby increasing reliability of the light emitting device package.

Although FIG. 2A illustrates that the light emitting device 200 is attached to the first lead frame 221 as an example, the light emitting device 200 may be attached to the second lead frame 222.

Referring to FIG. 2B, the pickup tool 230 may pick up the light emitting device 200 and bond it to the package body 210.

Unlike in FIG. 2A, the light emitting device 200 is not bonded to the first lead frame 221 or the second lead frame 222 to directly conduct electricity, but is bonded on the package body 210 and wired through a wire to be described later. It may be electrically connected to the first and second lead frames 221 and 222.

The bonding member 240 may be Ag paste, Si paste, or epoxy in the case of paste bonding using an adhesive as described above with reference to FIG. 2A, and Au-Sn metal in the case of eutectic bonding.

Referring to FIG. 2C, in a chip on board (COB) type in which a plurality of light emitting devices are directly mounted on a substrate in a chip form, the pickup tool 230 may pick up the light emitting devices 200 and bond them to the circuit board 250. Can be.

First and second electrode patterns (not shown) are formed on the circuit board 250, and the light emitting device 200 may be bonded to the first and / or second electrode patterns on the circuit board 250 to directly conduct electricity. have.

As described above with reference to FIGS. 2A and 2B, the bonding member 240 may be Ag paste, Si paste, or epoxy in the case of paste bonding using an adhesive, or Au-Sn metal in the case of eutectic bonding. Since the light emitting device 200 and the circuit board 250 must be energized, a conductive paste or Au-Sn metal may be used.

2D illustrates a flip chip bonding process.

Flip chip bonding refers to a method of directly attaching a light emitting device to a substrate in a face-down form.

As shown in FIG. 2D, the upper and lower sides of the light emitting device 200 are bonded to the substrate 260 in an inverted state.

The light emitting device 200 includes a light emitting structure 205 including a first conductivity type semiconductor layer 202, an active layer 203, and a second conductivity type semiconductor layer 204 on the growth substrate 201, and an exposed portion. The first electrode 206 on the first conductive semiconductor layer 202 and the second electrode 207 on the second conductive semiconductor layer 204 are included.

The growth substrate 201 may be formed of a material suitable for growing a semiconductor material or a carrier wafer. In addition, it may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate. The growth substrate 201 may use, for example, at least one of sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga 2 0 3 . An uneven structure may be formed on the growth substrate 201, but is not limited thereto. Impurities on the surface may be removed by wet cleaning the substrate 201.

The light emitting structure 205 may include, for example, a metal organic chemical vapor deposition (MOCVD), a chemical vapor deposition (CVD), a plasma chemical vapor deposition (PECVD), a molecular beam. Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), etc. may be formed using, but is not limited thereto.

The first conductivity-type semiconductor layer 202 may be formed of a semiconductor compound, for example, may be formed of a compound semiconductor such as Group 3-5 or Group 2-6. In addition, the first conductivity type dopant may be doped. When the first conductivity type semiconductor layer 202 is an n type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, Te as an n type dopant, but is not limited thereto. In addition, when the first conductivity type semiconductor layer 202 is a p type semiconductor layer, the first conductivity type dopant may include Mg, Zn, Ca, Sr, Ba, etc. as a p type dopant, but is not limited thereto. .

The first conductivity type semiconductor layer 202 includes a semiconductor material having a composition formula of Al x In y Ga (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). can do. The first conductive semiconductor layer 202 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

The active layer 203 is a layer where electrons and holes meet to emit light having energy determined by an energy band inherent in the active layer (light emitting layer) material.

The active layer 203 may be formed of at least one of a single well structure, a multiple well structure, a quantum-wire structure, and a quantum dot structure. For example, the active layer 203 may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The well layer / barrier layer of the active layer 203 may be formed of any one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. However, the present invention is not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

The second conductive semiconductor layer 204 may be formed of a semiconductor compound, for example, a group III-V compound semiconductor doped with a second conductive dopant. A second conductive type semiconductor layer 204, for example, having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It may include a semiconductor material. When the second conductivity type semiconductor layer 204 is a p type semiconductor layer, the second conductivity type dopant may include Mg, Zn, Ca, Sr, Ba, or the like as a p type dopant. In addition, when the second conductive semiconductor layer 204 is an n-type semiconductor layer, the second conductive dopant may include Si, Ge, Sn, Se, Te, and the like as an n-type dopant, but is not limited thereto. .

A first electrode 206 is formed on the first conductive semiconductor layer 202 exposed by mesa etching part of the first conductive semiconductor layer 202, the active layer 203, and the second conductive semiconductor layer 204. Is formed.

The second electrode 207 is formed on the second conductivity type semiconductor layer 204.

The light emitting device 200 is attached to the substrate 260 in the form of a flip chip, and an under bumper metal (UBM) 209 in an area on the substrate 260 to which the light emitting device 200 is attached. Next, the light emitting device 200 and the substrate 260 are electrically bonded with the solder 208 therebetween.

When the substrate 260 is a package body, the first electrode 206 and the second electrode 207 are bonded to the first and second lead frames 271 and 272, respectively, and the substrate 260 is a circuit board. In this case, the first electrode 206 and the second electrode 207 may be bonded to the electrode pattern formed on the circuit board.

After the die bonding process, the wire bonding process may proceed.

3A to 3C are diagrams illustrating a wire bonding process of electrically connecting a light emitting device and a substrate by using wires.

The wire bonding process is a process of electrically connecting the pattern of the light emitting device and the substrate using a wire (S120).

Referring to FIG. 3A, since the light emitting device 200 is bonded on the first lead frame 221 and directly energizes the first lead frame 221, the light emitting device 200 may be formed using only one wire 310. And the second lead frame 222 may be electrically connected.

Referring to FIG. 3B, since the light emitting device 200 is bonded to the package body 210 instead of the lead frame, the first electrode and the first lead frame of the light emitting device 200 may be formed using two wires 310, respectively. 221 may be electrically connected to each other, and the second electrode of the light emitting device 200 may be electrically connected to the second lead frame 222.

Referring to FIG. 3C, in the case of a chip on board (COB) type in which a plurality of light emitting devices are directly mounted on a substrate in a chip form, the light emitting device 200 may include a first electrode pattern or a second electrode pattern on the circuit board 250. Since it is bonded to and directly energized, it may be electrically connected to the second electrode pattern or the first electrode pattern on the circuit board 250 using only one wire 310.

As shown in FIG. 2D, when the light emitting device 200 is flip chip bonded to the substrate 260, the wire bonding process may be omitted.

After the wire bonding process, the photolysis wavelength light irradiation process may proceed.

4 is a view illustrating a process of irradiating photolysis wavelength light onto a light emitting device package.

The material constituting the package body 210 and the first and second lead frames 221 and 222, and the coating material on the package body 210 and the first and second lead frames 221 and 222 may be formed of air, moisture, or organic materials. It may react or oxidize and become discolored, and thus there is a problem in that the brightness of the light emitting device package decreases over time.

The process of irradiating the photolysis wavelength light 410 to the light emitting device package is performed by irradiating the photolysis wavelength light to the package to which the light emitting device is bonded to contaminate the organic material on the package body 210 and the first and second lead frames 221 and 222. It is a process for photodecomposition of the material (S130). Contaminants are photoly decomposed by the photolysis wavelength light irradiation process to prevent discoloration of the package body 210 and the first and second lead frames 221 and 222, thereby improving reliability.

The photolysis wavelength light 410 may be light generated from a light source having a short emission wavelength, for example, a UV light emitting diode (UV LED) or a blue light emitting diode (Blue LED).

The wavelength of the photolysis wavelength light 410 may be 360 ~ 475nm. The light emission wavelength of the UV light emitting diode is about 360 to 420 nm, and the light emission wavelength of the blue light emitting diode is about 450 to 475 nm.

The photolysis wavelength light irradiation process may be performed for about 1 to 24 hours. If the photolysis wavelength irradiation time is too short, the photolysis of the contaminant may not occur sufficiently. If the photolysis wavelength irradiation time is too long, only the manufacturing time of the light emitting device package is unnecessarily increased, and the package body and the first and second lead frames The exposure time is long, and oxidation may proceed rather.

Since the contaminant is photo-decomposed, the material may have a very small particle size, so that even if a molding part to be described later is formed, the contaminant may pass through the filling material of the molding part and diffuse out to the outside, thereby not affecting the reliability of the light emitting device package.

In the exemplary embodiment, the photolysis wavelength light irradiation process is performed after the wire bonding process, but the wire bonding process may be performed after the photolysis wavelength light irradiation process. However, if the photolysis wavelength light irradiation process is performed after the wire bonding process, the discoloration of the wire due to the organic matter or the like present in the wire may be prevented, and thus the reliability may be further improved.

After the photolysis wavelength light irradiation process, a molding part forming process may be performed.

5A and 5B are views illustrating a molding part forming process.

The molding part forming process is a process of forming the molding part 510 to cover the light emitting device 200 in order to protect the light emitting device 200 and the wire 310 (S140).

The molding part 510 may include a phosphor 515 to change the wavelength of light emitted from the light emitting device 200. That is, the light of the first wavelength region emitted from the bladder 200 may be excited by the phosphor 515 and converted into the light of the second wavelength region.

The phosphor 515 may include a garnet-based phosphor, a silicate-based phosphor, a nitride-based phosphor, or an oxynitride-based phosphor.

For example, the garnet-base phosphor is YAG (Y 3 Al 5 O 12 : Ce 3 +) or TAG: may be a (Tb 3 Al 5 O 12 Ce 3 +), wherein the silicate-based phosphor is (Sr, Ba, Mg, Ca) 2 SiO 4: Eu 2 + one can, the nitride-based fluorescent material is CaAlSiN 3 containing SiN: Eu 2 + one can, Si 6 of the oxynitride-based fluorescent material includes SiON - x Al x O x N 8 -x : Eu 2 + (0 <x <6).

The molding part 510 may be formed by filling a filling material in which a curing agent and a phosphor are mixed using a dispensing tool 520 and then curing the filling material.

Referring to FIG. 5A, a molding part 510 is formed to surround the light emitting device 200 to fill a cavity of the package body 210, and the upper surface of the molding part 510 is formed in a flat shape. have.

Alternatively, as shown in FIG. 5B, an upper surface of the molding part 510 may be formed in a dome shape. An upper surface of the molding part 510 formed in a dome shape may act as a lens to change an optical path of light emitted from the light emitting device 200.

After the molding part forming process, a process of separating the light emitting device package array into individual package units may be performed.

In order to ensure the fairness of the package manufacturing process, the light emitting device package array is separated into individual package units by using a mold. In this process, the lead frame is cut and bent, so it is also called a trim / form process (S150). .

After the trim / form process, a test process for inspecting electrical and optical characteristics of the light emitting device package is performed (S160).

FIG. 6 is a graph comparing light intensity with time of a light emitting device package according to an exemplary embodiment including a photolysis wavelength light irradiation process and a conventional light emitting device package.

After irradiating for 3 hours using the light emitted from the blue light emitting diode as the photolysis wavelength light, the light emitting device package formed with the molding part was observed for 1300 hours, and the change in light intensity was measured. In the case of a conventional light emitting device package (Reference) manufactured without the step of irradiating light, the luminous intensity of the light emitting device package manufactured according to the embodiment includes a step of irradiating light with a wavelength of photodegradation after 1300 hours. In the case of (Blue LED_D / P), the luminous intensity decreased by about 35% after 1300 hours.

That is, since the pollutants such as organic matter present in the package body and the lead frame are photoly decomposed by performing the photolysis wavelength light irradiation process before the molding part forming process, discoloration of the package body and the lead frame due to reaction with the contaminants is prevented. It can be seen that the luminous intensity of the light emitting device package has increased by about 10 to 20%.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, This is possible.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below but also by the equivalents of the claims.

200: light emitting element 210: package body
221: first lead frame 222: second lead frame
230: pickup tool 240: bonding member
250: circuit board 410: photolysis wavelength light
510: molding part 520: dispensing tool

Claims (15)

Bonding the light emitting device to the substrate; And
The method of manufacturing a light emitting device package comprising the step of irradiating the photolysis wavelength light on the substrate. The method of claim 1,
The photolysis wavelength light is a method of manufacturing a light emitting device package including light emitted from a UV light emitting diode or a blue light emitting diode. The method of claim 1,
The wavelength of the photolysis wavelength light is a manufacturing method of the light emitting device package is 360 ~ 475nm. The method of claim 1,
The method of manufacturing a light emitting device package in the step of irradiating the photolysis wavelength light, the contaminants present in the light emitting device package is photo decomposition. The method of claim 1,
Irradiating the photolysis wavelength light is a method of manufacturing a light emitting device package is carried out for 1 to 24 hours. The method of claim 1,
After bonding the light emitting device to a substrate, further comprising electrically connecting the light emitting device to the substrate using a wire. The method of claim 1,
The bonding of the light emitting device to a substrate may include paste bonding using an adhesive, eutectic bonding, or flip chip bonding. The method of claim 1,
The substrate is a method of manufacturing a light emitting device package including a lead frame, a circuit board or a package body. The method of claim 1,
Forming a molding to cover the light emitting device further comprising the method of manufacturing a light emitting device package. The method of claim 9,
The molding part manufacturing method of a light emitting device package including a phosphor. The method of claim 9,
The molding part manufacturing method of a light emitting device package having an upper surface is formed in a flat (flat) or dome (dome) type. The method of claim 7, wherein
The adhesive is a method of manufacturing a light emitting device package containing Ag paste, Si paste, or epoxy. The method of claim 7, wherein
The eutectic bonding method of manufacturing a light emitting device package using Au-Sn metal. 11. The method of claim 10,
The phosphor may include a garnet-based phosphor, a silicate-based phosphor, a nitride-based phosphor, or an oxynitride-based phosphor. The method of claim 9,
The method of manufacturing a light emitting device package further comprising the step of separating the light emitting device package array into individual package units.
KR1020110111974A 2011-10-31 2011-10-31 Fabricating method for light emitting device package KR20130047137A (en)

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