KR20130046426A - Method for manufacturing semiconductor wafer provided with adhesive layer, photosensitive adhesive, and semiconductor device - Google Patents
Method for manufacturing semiconductor wafer provided with adhesive layer, photosensitive adhesive, and semiconductor device Download PDFInfo
- Publication number
- KR20130046426A KR20130046426A KR1020137001511A KR20137001511A KR20130046426A KR 20130046426 A KR20130046426 A KR 20130046426A KR 1020137001511 A KR1020137001511 A KR 1020137001511A KR 20137001511 A KR20137001511 A KR 20137001511A KR 20130046426 A KR20130046426 A KR 20130046426A
- Authority
- KR
- South Korea
- Prior art keywords
- photosensitive adhesive
- preferable
- resin
- bis
- adhesive agent
- Prior art date
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- 239000000853 adhesive Substances 0.000 title claims abstract description 173
- 239000004065 semiconductor Substances 0.000 title claims abstract description 121
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000012790 adhesive layer Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 229920005989 resin Polymers 0.000 claims description 75
- 239000011347 resin Substances 0.000 claims description 75
- 239000010410 layer Substances 0.000 claims description 45
- 229920001187 thermosetting polymer Polymers 0.000 claims description 38
- 230000005855 radiation Effects 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 25
- 229920000642 polymer Polymers 0.000 claims description 19
- 238000007650 screen-printing Methods 0.000 claims description 16
- 239000003999 initiator Substances 0.000 claims description 11
- -1 allyl amide imide Chemical class 0.000 description 60
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 40
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 38
- 150000001875 compounds Chemical class 0.000 description 37
- 238000007639 printing Methods 0.000 description 37
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 33
- 229920001721 polyimide Polymers 0.000 description 30
- 239000009719 polyimide resin Substances 0.000 description 26
- 239000003822 epoxy resin Substances 0.000 description 24
- 229920000647 polyepoxide Polymers 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 150000004985 diamines Chemical class 0.000 description 19
- 239000000945 filler Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 18
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 18
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 18
- 125000003700 epoxy group Chemical group 0.000 description 18
- 230000009467 reduction Effects 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 150000008064 anhydrides Chemical class 0.000 description 16
- 229920003986 novolac Polymers 0.000 description 15
- 125000000524 functional group Chemical group 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 13
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 11
- 239000002313 adhesive film Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 8
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- 238000006116 polymerization reaction Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
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- 239000002994 raw material Substances 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 239000002699 waste material Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- 238000010586 diagram Methods 0.000 description 5
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- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 5
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- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 4
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
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- 239000006087 Silane Coupling Agent Substances 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
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- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- DCTOHCCUXLBQMS-UHFFFAOYSA-N 1-undecene Chemical compound CCCCCCCCCC=C DCTOHCCUXLBQMS-UHFFFAOYSA-N 0.000 description 3
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 3
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 3
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 3
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- 229910001413 alkali metal ion Inorganic materials 0.000 description 3
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 3
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 3
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- 230000000052 comparative effect Effects 0.000 description 3
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- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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Abstract
본 발명은 반도체 웨이퍼의 한쪽 표면 전체에, 스크린 인쇄법에 의해 감광성 접착제를 도포하여 감광성 접착제층을 형성시키는 공정과, 상기 감광성 접착제층을 노광에 의해 B 스테이지화하는 공정을 포함하는, 접착제층 부착 반도체 웨이퍼의 제조 방법에 관한 것이다.The present invention includes a step of applying a photosensitive adhesive to the entire surface of one surface of a semiconductor wafer to form a photosensitive adhesive layer, and a step of B-stageting the photosensitive adhesive layer by exposure. A method for manufacturing a semiconductor wafer.
Description
본 발명은 접착제층 부착 반도체 웨이퍼의 제조 방법, 감광성 접착제 및 반도체 장치에 관한 것이다. 보다 상세하게는 IC, LSI 등의 반도체 소자와 리드 프레임, 절연성 지지 기판 등의 지지 부재, 또는 반도체칩끼리를 적층할 때의 접합 재료(다이 본딩재)로서 이용되는 다이 본딩용 감광성 접착제, 그것을 이용한 반도체 웨이퍼의 제조 방법 및 반도체 장치에 관한 것이다.TECHNICAL FIELD This invention relates to the manufacturing method of a semiconductor wafer with an adhesive bond layer, the photosensitive adhesive agent, and a semiconductor device. In more detail, the photosensitive adhesive agent for die bonding used as a bonding material (die bonding material) at the time of laminating | stacking semiconductor elements, such as IC and an LSI, support members, such as a lead frame and an insulating support substrate, or a semiconductor chip, and using the same A method for manufacturing a semiconductor wafer and a semiconductor device.
IC, LSI 등의 반도체 소자와 지지 부재의 접합 재료, 또는 반도체 칩끼리를 적층할 때의 접합 재료로서 특정한 폴리이미드 수지를 이용한 접착 필름, 특정한 폴리이미드 수지에 도전성 충전재 또는 무기 충전재를 첨가한 다이 본딩용 접착 필름이 알려져 있다.Die bonding in which an electrically conductive filler or an inorganic filler is added to an adhesive film using a specific polyimide resin or a specific polyimide resin as a bonding material for laminating semiconductor elements such as IC and LSI and a supporting member, or when bonding semiconductor chips together. The adhesive film for is known.
최근, 반도체 장치의 조립 공정을 반도체 웨이퍼(이하, 간단히 「웨이퍼」라고 하는 경우가 있음) 상에서 일괄적으로 행함으로써 효율화하는 것이 검토되고 있다. 또한, 반도체 칩의 적층에 따라 웨이퍼의 두께는 박막화하는 경향이 있다. 일반적으로는 접착 필름을 이용한 공정 또는 스핀 코팅법에 의해 다이 본딩용 접착제를 반도체 웨이퍼에 도포하는 공정이 적용되고 있다.In recent years, the efficiency of the assembly process of a semiconductor device is performed by carrying out collectively on a semiconductor wafer (henceforth simply a "wafer"). In addition, the thickness of the wafer tends to be thin due to the stacking of semiconductor chips. Generally, the process of apply | coating the adhesive agent for die bonding to a semiconductor wafer by the process or spin coating method using an adhesive film is applied.
접착 필름을 이용한 공정으로서는 반도체 웨이퍼 전체면에 접착 필름을 라미네이트하고, 다이싱용 지지 필름을 더 라미네이트하여, 다이싱 공정에 의해 개편화하고, 접착 필름이 적층된 반도체 칩을 반도체 기판 또는 반도체 칩에 첩부하는 방법 등을 들 수 있다.As a process using an adhesive film, an adhesive film is laminated on the entire surface of the semiconductor wafer, a supporting film for dicing is further laminated and separated into pieces by a dicing step, and the semiconductor chip on which the adhesive film is laminated is attached to a semiconductor substrate or a semiconductor chip. And the like can be mentioned.
반도체 웨이퍼 전체면에 접착제를 도포하는 방법으로서는 반도체 웨이퍼 상의 액상 접착제를 고속 회전에 의해 전체면에 도포하는 스핀 코팅법도 널리 알려져 있다.As a method for applying the adhesive to the entire surface of the semiconductor wafer, a spin coating method for applying the liquid adhesive on the semiconductor wafer to the entire surface by high speed rotation is also widely known.
박막의 웨이퍼를 사용하는 공정에서는 웨이퍼의 강도가 저하하는 경향이 있다. 그로 인해, 웨이퍼의 백 그라인드 공정 후에는 백 그라인드 테이프를 접합한 채로 다이 본딩용 접착제를 도포하여, B 스테이지화를 행하는 것이 바람직하다.In the process of using a thin wafer, the strength of the wafer tends to decrease. Therefore, after the back grinding process of the wafer, it is preferable to apply an adhesive for die bonding while bonding the back grinding tape to perform B stage formation.
그러나, 접착 필름을 이용하는 경우, 접착 필름을 웨이퍼에 라미네이트하는 공정에서 웨이퍼 이외의 부분에서 접착 필름의 낭비가 발생하기 쉽다. 또한, 스핀 코팅법을 이용하는 경우에 있어서도 균일한 접착제의 층을 형성할 때까지 반도체 웨이퍼 상에 접착제를 공급하고, 계속해서 폐기할 필요가 있어 접착제의 낭비가 발생하기 쉽다.However, when using an adhesive film, waste of an adhesive film tends to generate | occur | produce in parts other than a wafer in the process of laminating an adhesive film to a wafer. In addition, even in the case of using the spin coating method, it is necessary to supply the adhesive on the semiconductor wafer until the uniform adhesive layer is formed, and then discard the adhesive, and the waste of the adhesive is likely to occur.
또한, 백 그라인드 테이프의 내열성은 80℃ 내지 100℃ 정도이며, 100℃ 이상의 가열에 의해 백 그라인드 테이프가 수축한다. 백 그라인드 테이프의 수축은 반도체 웨이퍼의 휘어짐의 원인이 될 수 있다. 80℃ 이하의 가열로도 백 그라인드 테이프의 열팽창률과 반도체 웨이퍼의 열팽창률의 차로부터 가열 후의 냉각 중에 반도체 웨이퍼가 휘는 경향이 있다.Moreover, the heat resistance of a back grind tape is about 80 to 100 degreeC, and a back grind tape shrinks by heating at 100 degreeC or more. Shrinkage of the back grind tape may cause bending of the semiconductor wafer. Even with heating of 80 ° C. or less, the semiconductor wafer tends to bend during cooling after heating from the difference between the thermal expansion rate of the back grind tape and the thermal expansion rate of the semiconductor wafer.
본 발명은 상기 사정을 감안하여 이루어진 것으로, 균일한 막 두께이며, 접착제의 낭비가 적게 반도체 웨이퍼 상에 접착제층을 형성할 수 있고, 나아가 접착제층의 B 스테이지화를 위한 가열에 기인하는 반도체 웨이퍼의 휘어짐을 피할 수 있는, 접착제층 부착 반도체 웨이퍼의 제조 방법, 이러한 제조 방법에 이용하는 감광성 접착제, 이러한 제조 방법에 의해 제조할 수 있는 접착제층 부착 반도체 웨이퍼를 구비한 반도체 장치 및 스크린 인쇄용 감광성 접착제를 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has a uniform film thickness, enables the formation of an adhesive layer on a semiconductor wafer with little waste of adhesive, and furthermore, a semiconductor wafer resulting from heating for the B stage of the adhesive layer. Providing a method for producing a semiconductor wafer with an adhesive layer, a photosensitive adhesive agent used in such a manufacturing method, a semiconductor device provided with a semiconductor wafer with an adhesive layer which can be produced by such a manufacturing method, and a photosensitive adhesive for screen printing, which can avoid warpage. For the purpose of
본 발명은, 반도체 웨이퍼의 한쪽 표면 전체에, 스크린 인쇄법에 의해 감광성 접착제를 도포하여 감광성 접착제층을 형성하는 공정과, 감광성 접착제층을 노광에 의해 B 스테이지화하는 공정을 포함하는, 접착제층 부착 반도체 웨이퍼의 제조 방법을 제공한다.With this adhesive layer including the process of apply | coating a photosensitive adhesive agent by the screen-printing method to the whole surface of a semiconductor wafer, and forming a photosensitive adhesive bond layer on the whole surface of a semiconductor wafer, and B-staging the photosensitive adhesive bond layer by exposure. A method for manufacturing a semiconductor wafer is provided.
상기 본 발명에 관한 제조 방법에 따르면, 균일한 막 두께이며, 접착제의 낭비가 적게 반도체 웨이퍼 상에 접착제층을 형성할 수 있고, 나아가 접착제층의 B 스테이지화를 위한 가열에 기인하는 반도체 웨이퍼의 휘어짐을 피할 수 있다.According to the above-described manufacturing method of the present invention, the adhesive layer can be formed on the semiconductor wafer with a uniform film thickness and less waste of the adhesive, and further, the semiconductor wafer is warped due to heating for the B stage of the adhesive layer. Can be avoided.
상기 감광성 접착제는 열경화성 수지, 방사선 중합성 화합물 및 광중합 개시제를 함유할 수 있다.The photosensitive adhesive may contain a thermosetting resin, a radiation polymerizable compound and a photopolymerization initiator.
상기 감광성 접착제는 열경화 개시제를 더 함유할 수 있다.The photosensitive adhesive may further contain a thermosetting initiator.
상기 감광성 접착제의 25℃에서의 점도는 1 내지 100Paㆍs이고, 상기 감광성 접착제의 틱소트로피 지수는 1.0 내지 3.0일 수 있다.The viscosity at 25 ° C. of the photosensitive adhesive may be 1 to 100 Pa · s, and the thixotropy index of the photosensitive adhesive may be 1.0 to 3.0.
본 발명에 관한 감광성 접착제는 열경화성 수지, 방사선 중합성 화합물 및 광중합 개시제를 함유하며, 상기 제조 방법에서 감광성 접착제층을 형성하기 위하여 이용된다.The photosensitive adhesive agent concerning this invention contains a thermosetting resin, a radiation polymeric compound, and a photoinitiator, and is used in order to form the photosensitive adhesive bond layer in the said manufacturing method.
본 발명은 또한 상기 본 발명에 관한 제조 방법에 의해 얻어진 접착제층 부착 반도체 웨이퍼를 개편화하여 접착제층을 갖는 반도체 칩을 얻는 공정과, 접착제층 부착 반도체 웨이퍼의 반도체 칩을 지지 부재 또는 다른 반도체 칩에 접착하는 공정을 포함하는 방법에 의해 얻어지는 반도체 장치를 제공한다.The present invention further provides a step of separating the semiconductor wafer with an adhesive layer obtained by the manufacturing method according to the present invention to obtain a semiconductor chip having an adhesive layer, and attaching the semiconductor chip of the semiconductor wafer with an adhesive layer to a supporting member or another semiconductor chip. Provided is a semiconductor device obtained by a method including a step of bonding.
또한, 본 발명은 열경화성 수지, 방사선 중합성 화합물 및 광중합 개시제를 함유하고, 25℃에서의 점도가 1 내지 100Paㆍs이고, 틱소트로피 지수가 1.0 내지 3.0인 스크린 인쇄용 감광성 접착제를 제공한다.The present invention also provides a photosensitive adhesive for screen printing containing a thermosetting resin, a radiation polymerizable compound and a photopolymerization initiator, having a viscosity at 25 ° C. of 1 to 100 Pa · s and a thixotropy index of 1.0 to 3.0.
본 발명에 따르면, 균일한 막 두께이며, 접착제의 낭비가 적게 반도체 웨이퍼 상에 접착제층을 형성할 수 있고, 나아가 접착제층의 B 스테이지화를 위한 가열에 기인하는 반도체 웨이퍼의 휘어짐을 피할 수 있는, 접착제층 부착 반도체 웨이퍼의 제조 방법, 이러한 제조 방법에 이용하는 감광성 접착제, 이러한 제조 방법에 의해 제조할 수 있는 반도체 웨이퍼를 구비한 반도체 장치 및 스크린 인쇄용 감광성 접착제가 제공된다.According to the present invention, it is possible to form the adhesive layer on the semiconductor wafer with a uniform film thickness and less waste of the adhesive, and further to avoid the bending of the semiconductor wafer due to the heating for the B stage of the adhesive layer, Provided are a method for producing a semiconductor wafer with an adhesive layer, a photosensitive adhesive used in such a manufacturing method, a semiconductor device having a semiconductor wafer that can be produced by such a manufacturing method, and a photosensitive adhesive for screen printing.
도 1은 반도체 장치의 제조 방법의 일 실시 형태를 도시하는 모식도이다.
도 2는 반도체 장치의 제조 방법의 일 실시 형태를 도시하는 모식도이다.
도 3은 반도체 장치의 제조 방법의 일 실시 형태를 도시하는 모식도이다.
도 4는 반도체 장치의 제조 방법의 일 실시 형태를 도시하는 모식도이다.
도 5는 반도체 장치의 제조 방법의 일 실시 형태를 도시하는 모식도이다.
도 6은 반도체 장치의 일 실시 형태를 도시하는 모식 단면도이다.BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram which shows one Embodiment of the manufacturing method of a semiconductor device.
It is a schematic diagram which shows one Embodiment of the manufacturing method of a semiconductor device.
3 is a schematic diagram illustrating an embodiment of a method of manufacturing a semiconductor device.
It is a schematic diagram which shows one Embodiment of the manufacturing method of a semiconductor device.
It is a schematic diagram which shows one Embodiment of the manufacturing method of a semiconductor device.
It is a schematic cross section which shows one Embodiment of a semiconductor device.
이하, 도면을 참조하면서 본 발명에 관한 접착제층 부착 반도체 웨이퍼의 제조 방법, 감광성 접착제, 반도체 장치 및 스크린 인쇄용 감광성 접착제의 바람직한 일 실시 형태에 대하여 상세하게 설명한다. 단, 본 발명은 이하의 실시 형태에 한정되는 것이 아니다.EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of the manufacturing method of the semiconductor wafer with an adhesive bond layer, the photosensitive adhesive agent, a semiconductor device, and the screen printing photosensitive adhesive agent which concerns on this invention is described in detail, referring drawings. However, this invention is not limited to the following embodiment.
본 실시 형태에 관한 반도체 장치의 제조 방법은, 반도체 웨이퍼의 한쪽 표면 전체에, 스크린 인쇄법에 의해 감광성 접착제를 도포하여 감광성 접착제층을 형성시키는 공정(감광성 접착제층 형성 공정)과, 감광성 접착제층을 노광에 의해 B 스테이지화하는 공정(B 스테이지화 공정)과, 반도체 웨이퍼를 B 스테이지화된 감광성 접착제층과 함께 절단하는 공정(다이싱 공정)을 포함한다.The manufacturing method of the semiconductor device which concerns on this embodiment is a process (photosensitive adhesive bond layer formation process) which apply | coats a photosensitive adhesive agent to the whole one surface of a semiconductor wafer by screen printing, and forms a photosensitive adhesive bond layer, and the photosensitive adhesive bond layer is used. It includes a step (B staged step) of forming a B stage by exposure, and a step (dicing step) of cutting the semiconductor wafer together with the B staged photosensitive adhesive layer.
(감광성 접착제층 형성 공정)(Photosensitive Adhesive Layer Forming Step)
도 1에 도시하는 반도체 웨이퍼(6)는, 반도체 패키지(반도체 장치)(도 6)에 내장되는 반도체 칩(13a 및 13b)(도 6)을 형성하기 위하여 이용된다. 반도체 웨이퍼(6)는 전형적으로는 실리콘 웨이퍼이다. 반도체 웨이퍼(6)에는 이미 전공정에 의해 회로가 형성되어 있을 수도 있다. 감광성 접착제층 형성 공정에서는, 예를 들면 도 1에 도시된 바와 같이 반도체 웨이퍼(6)의 회로가 형성되어 있는 면과는 반대측의 면(이면)에 감광성 접착제(5)를 스크린 인쇄법에 의해 도포(인쇄)한다. 이에 의해, 도 2에 도시한 바와 같이, 반도체 웨이퍼(6)의 이면 상에 균일한 두께의 감광성 접착제층(7)이 형성된다.The
스크린 인쇄법은 일반적으로 이하의 2가지 공법을 포함한다. 하나는 평탄한 금속판에 패터닝한 개구부를 형성한, 이른바 메탈 인쇄판을 이용한 공법이다. 상기 공법에서는 인쇄하고자 하는 대상 위에 메탈 인쇄판을 설치하고, 메탈 인쇄판 상에 탑재한 잉크를 스키지라고 불리는 금속판으로 문지름으로써 잉크가 도포된다. 이 공정에 의해 잉크는 메탈 인쇄판에 형성된 개구 패턴의 형상대로 도포된다.Screen printing methods generally include the following two methods. One is the construction method using what is called a metal printing plate in which the opening part patterned to the flat metal plate was formed. In the above method, a metal printing plate is provided on an object to be printed, and ink is applied by rubbing the ink mounted on the metal printing plate with a metal plate called skid. By this process, ink is applied in the shape of an opening pattern formed on a metal printing plate.
또 하나의 스크린 인쇄법으로서, 스테인리스, 나일론 및 폴리에스테르 등의 실을 짜서 준비한 메쉬 중 도포하고자 하는 부분만을 남기고 수지 등으로 매립한, 이른바 메쉬 인쇄판을 이용한 공법이 있다. 상기 공법에서는 메쉬 인쇄판 상에 탑재한 잉크를 스크레퍼라고 불리는 수지제 또는 금속제의 판으로 문지른다. 이 공정에 의해 잉크는 메쉬 인쇄판의 수지 등으로 매립되어 있지 않은 개구부에 침투한다. 다음에, 폴리우레탄이나 실리콘 고무 등으로 만든 스키지를 이용하여 메쉬 인쇄판 상을 문지른다. 이 공정에 의해 개구부에 침투한 잉크가 인쇄 대상 상에 전사되어 인쇄 공정이 완료된다.As another screen printing method, there is a method using a so-called mesh printing plate embedded in a resin or the like, leaving only a portion to be coated in a mesh prepared by weaving a thread such as stainless steel, nylon and polyester. In the above method, the ink mounted on the mesh printing plate is rubbed with a resin or metal plate called a scraper. By this process, the ink penetrates into the openings not embedded in the resin of the mesh printing plate or the like. Next, the skid made of polyurethane, silicone rubber or the like is rubbed onto the mesh printing plate. By this process, the ink that has penetrated the openings is transferred onto the printing object to complete the printing process.
본 실시 형태에 있어서, 어느 인쇄 공법이라도 원하는 위치, 영역에만 선택적으로 접착제를 도포할 수 있기 때문에, 접착제의 낭비를 감소시킬 수 있어 재료 수율이 우수하다.In this embodiment, since any printing method can selectively apply | coat an adhesive only to a desired position and area | region, waste of adhesive can be reduced and it is excellent in material yield.
메탈 인쇄판을 이용한 공법에서 비교적 넓은 범위에 인쇄를 행하고자 하면, 개구부에 일체의 부재가 없기 때문에 개구부에서의 스키지의 압력에 대한 인쇄판으로부터의 응력이 발생하지 않는다. 그로 인해, 스키지의 중앙에 압력이 집중하고, 스키지 중앙부가 개구부에 강하게 압입되어 개구부의 중앙에서 감광성 접착제층의 막 두께가 저하하는 경향이 있다. 즉, 일반적으로 개구부가 넓을수록 스키지의 중앙부는 보다 강하게 압입되어, 중앙에서의 감광성 접착제층의 막 두께가 저하하는 경향이 있다.When printing is to be performed in a relatively wide range in the method using a metal printing plate, since there is no integral member in the opening, the stress from the printing plate against the pressure of the skid in the opening does not occur. Therefore, the pressure concentrates in the center of the skid, the center of the skid is strongly pressed into the opening, and the film thickness of the photosensitive adhesive layer tends to decrease in the center of the opening. That is, in general, the wider the opening, the more strongly the center part of the skid is pressed, and the film thickness of the photosensitive adhesive layer in the center tends to decrease.
한편, 메쉬 인쇄판을 이용한 공법에서는 개구부에도 메쉬실이 있기 때문에, 스키지의 압력에 대한 메쉬 인쇄판으로부터의 응력이 발생한다. 즉, 스키지 중앙부에서도 개구부에 있는 메쉬실이 지지 부재로서 기능하기 때문에, 개구부에 스키지가 강하게 압입되는 일이 없다. 이로 인해, 스키지 중앙부에서도 막 두께가 저하하지 않아, 균일한 감광성 접착제층을 얻을 수 있다.On the other hand, in the construction method using a mesh printing plate, since there is a mesh thread in an opening part, the stress from the mesh printing plate with respect to the pressure of a skid generate | occur | produces. That is, since the mesh chamber in the opening also functions as a supporting member in the skid center, the skid is not strongly pressed into the opening. For this reason, a film thickness does not fall also in a skid center part, and a uniform photosensitive adhesive bond layer can be obtained.
본 실시 형태에서의 스크린 인쇄법에서는 웨이퍼의 표면 전체라고 하는 비교적 넓은 범위에 막 두께가 균일한 감광성 접착제층을 형성한다고 하는 관점에서 메쉬 인쇄판을 이용한 공법이 바람직하다.In the screen printing method of the present embodiment, a method using a mesh printing plate is preferable from the viewpoint of forming a photosensitive adhesive layer having a uniform film thickness in a relatively wide range of the entire surface of the wafer.
(B 스테이지화 공정)(B staged process)
상기 감광성 접착제층(7)은 노광에 의해 B 스테이지화된 후에 피착체에 대한 접착성을 갖는 감광성 접착제층이다. 도포된 감광성 접착제층(7)에 대하여, 노광 장치에 의해 가시광 또는 자외선을 조사하여 감광성 접착제층(7)을 구성하는 감광성 접착제(5)를 B 스테이지화한다. 이에 의해 감광성 접착제(5)에 포함되는 광중합 개시제와 방사선 중합성 화합물에 의한 중합 반응이 진행되어, B 스테이지화된 감광성 접착제층(8)은 적절한 점착성과 접착성을 갖는다. 구체적으로는, 감광성 접착제층(8)이 반도체 웨이퍼(6)에 고정된다. 이와 같이 가열이 아니라 노광에 의해 감광성 접착제층(7)의 B 스테이지화를 행함으로써, 백 그라인드 테이프를 반도체 웨이퍼(6)에 접합시킨 채의 상태로 감광성 접착제(5)의 도포 및 감광성 접착제층(7)의 B 스테이지화를 행하는 것이 가능해진다.The said photosensitive
노광은 산소에 의한 광중합 반응의 저해를 피하는 관점에서, 질소 분위기하 또는 진공 조건하 또는 감광성 접착제층(7)에 투명한 커버 필름을 라미네이트한 상태에서 행해지는 것이 바람직하다. 보다 상세하게는, 노광에 의해 B 스테이지화된 감광성 접착제층(8)은 다이싱에 의한 개편화, 및 다이싱을 행할 때의 지지체로부터의 박리를 가능하게 하는 적절한 점착성과, 반도체 칩 및 유리 기판 등의 피착체에 대한 접착성을 갖고 있다. 이러한 기능을 갖는 감광성 접착제층(8)의 상세에 대해서는 후술한다.It is preferable to perform exposure in the state which laminated | stacked the transparent cover film in the photosensitive
노광된 감광성 접착제층(8)의 30℃에서의 표면의 태크력(표면 태크력)이 200gf/cm2 이하임으로써, 감광성 접착제층(8)이 B 스테이지화된 것을 확인할 수 있다.It can be confirmed that the photosensitive adhesive bond layer 8 B staged by the tag force (surface tag force) of the surface at 30 degreeC of the exposed photosensitive
30℃에서의 표면 태크력이 200gf/cm2를 초과하면, 감광성 접착제층(8)의 실온에서의 표면의 점착성이 높아져 취급성이 저하하는 경향이 있다. 또한, 다이싱 후의 다이싱 필름과의 박리성이 저하되어 픽업성이 저하하는 경향이 있다. 또한, 30℃에서의 표면 태크력이 1gf/cm2 이하이면, 감광성 접착제의 점착성이 낮아지고, 다이싱시에 감광성 접착제와 다이싱 필름의 계면에 물이 침입하고, 칩 비산이 발생하는 경향이 있다.When surface tagging force in 30 degreeC exceeds 200 gf / cm < 2 >, the adhesiveness of the surface at room temperature of the photosensitive
노광된 감광성 접착제층(8)의 120℃에서의 표면 태크력이 200gf/cm2 이상인 것이 바람직하다. 120℃에서의 표면 태크력이 200gf/cm2 미만이면, 열압착성이 손상되어 열압착시에 공극이 발생하거나 열압착 온도가 고온화하는 등의 경향이 있다. 또한, 120℃에서의 표면 태크력이 500gf/cm2 이상인 경우, 열압착시에 감광성 접착제가 과잉으로 습윤 확산되어 칩측면에 감광성 접착제가 비어져 나오는 경향이 있다.It is preferable that the surface tag force at 120 degreeC of the exposed photosensitive
상기 표면 태크력은 이하와 같이 측정한 값이다. 감광성 접착제를 실리콘 웨이퍼 상에 스크린 인쇄법에 의해 도포하고, 얻어진 도막에 고정밀도 평행 노광기(오크 세이사꾸쇼 제조, 「EXM-1172-B-∞」(상품명))에 의해 질소 분위기하에 1000mJ/cm2로 노광을 행한다. 그 후, 레스카사 제조의 프로브 태킹 시험기를 이용하여, 프로브 직경 5.1mm, 박리 속도 10mm/s, 접촉 하중 100gf/cm2, 접촉 시간 1s의 조건에서 30℃ 및 120℃에서의 감광성 접착제층(8)의 표면의 태크력을 측정한다. 상기 고정밀도 평행 노광기 대신에 평행 노광기(가부시끼가이샤 루미나스 제조, 「ML-210FM 마스크 얼라이너」(상품명))를 이용할 수도 있다.The said surface tag force is the value measured as follows. The photosensitive adhesive agent is apply | coated on a silicon wafer by the screen printing method, and it is 1000mJ / cm in nitrogen atmosphere by the high precision parallel exposure machine (Ok Seisakusho make, "EXM-1172-B-∞" (brand name)) to the obtained coating film. 2 is exposed. Then, the photosensitive
(다이싱 공정)Dicing Process
다음에, 반도체 웨이퍼(6) 및 그의 이면 상에 형성된 감광성 접착제층(8)을 갖는 접착제층 부착 반도체 웨이퍼(20)를 웨이퍼측으로부터 다이싱하여 개편화된 반도체 칩(11)을 제작한다(도 4). 즉, 다이싱 머신에 의해 반도체 웨이퍼(6)를 절단함으로써, 반도체 웨이퍼(6)가 복수의 반도체 칩(11)으로 절단된다. 이 다이싱 공정 전에, 상기 감광성 접착제층(8)이 형성된 반도체 웨이퍼(6)의 이면에 다이싱 필름(10)이 첩부되는 것이 바람직하다. 첩부는 필요에 따라 가열하면서 행해질 수도 있다. 예를 들면, 다이싱 필름(10)에 의해 전체를 프레임(웨이퍼 링)(9)에 고정한 상태에서(도 3), 다이싱 블레이드(12)를 이용하여 행해지는 것이 바람직하다(도 4). 개편화된 감광성 접착제층을 갖는 반도체 칩(11)은 다이 본딩 장치 등을 이용하여 픽업된다(도 5).Next, the
도 6에 도시한 바와 같이, 다이싱 공정에 의해 얻어진 반도체 칩(13a)을 별도 준비한 지지 부재(14) 상에 배치한다. 또는, 반도체 칩(13a)과는 별도의 반도체 칩(13b)을 미리 지지 부재(14)에 접합된 반도체 칩(13a) 상에 배치한다. 이 때, 감광성 접착제층(16 및 17)이 열압착됨으로써, 반도체 칩(13a)과 지지 부재(14) 및 반도체 칩(13b)과 반도체 칩(13a)이 접착되고, 반도체 칩(13a 및 13b)은 지지 부재(14) 또는 반도체 칩(13a)과 접착 고정된다.As shown in FIG. 6, the
그 후, 반도체 칩(13a 및 13b) 상의 본딩 패드와 지지 부재(14)가 본딩 와이어(18)에 의해 접속되고, 반도체 칩(13a 및 13b)이 본딩 와이어(18)와 함께 밀봉재(15)로 밀봉됨으로써, 도 6에 도시한 바와 같은 반도체 패키지(반도체 장치)가 완성된다.Thereafter, the bonding pads on the
이상 설명한 반도체 장치의 제조 방법에 따르면, 반도체 칩(13a)과 지지 부재(14) 또는 반도체 칩(13a 및 13b)끼리를 접착하기 위한 감광성 접착제(5)는, 스크린 인쇄법에 의해 반도체 웨이퍼(6) 상에만 도포하는 것이 가능하다. 이에 의해, 감광성 접착제(5)의 조성에 상관없이 인쇄판의 변경에 의해 원하는 막 두께로 도포가 가능하다. 따라서, 반도체 장치 또는 접착제층 부착 반도체 웨이퍼의 제조 방법에서의 접착제의 낭비를 감소시켜, 단일한 접착제로 복수의 막 두께로 도포하는 것이 가능하다.According to the manufacturing method of the semiconductor device demonstrated above, the photosensitive
계속해서, 본 실시 형태에 관한 감광성 접착제의 바람직한 실시 형태에 대하여 설명한다. 이 감광성 접착제는, 상술한 반도체 장치의 제조 방법에서의 상기 감광성 접착제(5)로서 바람직하게 이용할 수 있다.Next, preferable embodiment of the photosensitive adhesive agent which concerns on this embodiment is demonstrated. This photosensitive adhesive agent can be used suitably as the said photosensitive
본 실시 형태에 관한 감광성 접착제는 (A) 열경화성 수지와 (B) 방사선 중합성 화합물과 (C) 광중합 개시제를 함유한다.The photosensitive adhesive agent concerning this embodiment contains (A) thermosetting resin, (B) radiation polymeric compound, and (C) photoinitiator.
(A) 열경화성 수지는 가열에 의해 가교 반응을 일으키는 반응성 화합물로 이루어지는 성분이면 특별히 한정되지 않으며, 예를 들면 에폭시 수지, 시아네이트에스테르 수지, 말레이미드 수지, 알릴나드이미드 수지, 페놀 수지, 우레아 수지, 멜라민 수지, 알키드 수지, 아크릴 수지, 불포화 폴리에스테르 수지, 디알릴프탈레이트 수지, 실리콘 수지, 레조르시놀포름알데히드 수지, 크실렌 수지, 푸란 수지, 폴리우레탄 수지, 케톤 수지, 트리알릴시아누레이트 수지, 폴리이소시아네이트 수지, 트리스(2-히드록시에틸)이소시아누레이트를 함유하는 수지, 트리알릴트리멜리테이트를 함유하는 수지, 시클로펜타디엔으로부터 합성된 열경화성 수지 및 방향족 디시아나미드의 삼량체화에 의한 열경화성 수지를 들 수 있다. 그 중에서도 폴리이미드 수지와의 조합에 있어서, 고온에서의 우수한 접착력을 갖게 할 수 있는 점에서 에폭시 수지, 말레이미드 수지 및 알릴나드이미드 수지가 바람직하다. 또한, 이들 열경화성 수지는 1종을 단독으로 또는 2종 이상을 조합하여 이용할 수 있다.(A) A thermosetting resin will not be specifically limited if it is a component which consists of reactive compounds which generate | occur | produce a crosslinking reaction by heating, For example, an epoxy resin, a cyanate ester resin, a maleimide resin, allyl amideimide resin, a phenol resin, a urea resin, Melamine resin, alkyd resin, acrylic resin, unsaturated polyester resin, diallyl phthalate resin, silicone resin, resorcinol formaldehyde resin, xylene resin, furan resin, polyurethane resin, ketone resin, triallyl cyanurate resin, poly Isocyanate resin, resin containing tris (2-hydroxyethyl) isocyanurate, resin containing triallyl trimellitate, thermosetting resin synthesized from cyclopentadiene and thermosetting resin by trimerization of aromatic dicyanamid Can be mentioned. Especially, in combination with a polyimide resin, an epoxy resin, a maleimide resin, and an allyl amide imide resin are preferable at the point which can have the outstanding adhesive force at high temperature. In addition, these thermosetting resins can be used individually by 1 type or in combination of 2 or more types.
에폭시 수지로서는 분자 내에 적어도 2개 이상의 에폭시기를 포함하는 것이 바람직하며, 열압착성, 경화성 및 경화물 특성의 점에서 페놀의 글리시딜에테르형의 에폭시 수지가 보다 바람직하다. 이러한 수지로서는, 예를 들면 비스페놀 A형(또는 AD형, S형, F형) 글리시딜에테르, 수소 첨가 비스페놀 A형 글리시딜에테르, 에틸렌옥시드 부가체 비스페놀 A형 글리시딜에테르, 프로필렌옥시드 부가체 비스페놀 A형 글리시딜에테르, 페놀노볼락 수지의 글리시딜에테르, 크레졸노볼락 수지의 글리시딜에테르, 비스페놀 A 노볼락 수지의 글리시딜에테르, 나프탈렌 수지의 글리시딜에테르, 3관능형(또는 4관능형)의 글리시딜에테르, 디시클로펜타디엔페놀 수지의 글리시딜에테르, 다이머산의 글리시딜에스테르, 3관능형(또는 4관능형)의 글리시딜아민 및 나프탈렌 수지의 글리시딜아민을 들 수 있다. 이들은 1종을 단독으로 또는 2종 이상을 조합하여 사용할 수 있다.It is preferable that an epoxy resin contains at least 2 or more epoxy groups in a molecule | numerator, and the epoxy resin of the glycidyl ether type of a phenol is more preferable at the point of thermocompression property, curability, and hardened | cured material characteristic. Examples of such resins include bisphenol A (or AD, S and F) glycidyl ethers, hydrogenated bisphenol A glycidyl ethers, ethylene oxide adduct bisphenol A glycidyl ethers, and propylene. Oxide adduct bisphenol A glycidyl ether, glycidyl ether of phenol novolak resin, glycidyl ether of cresol novolak resin, glycidyl ether of bisphenol A novolak resin, glycidyl ether of naphthalene resin , Trifunctional (or tetrafunctional) glycidyl ether, glycidyl ether of dicyclopentadiene phenol resin, glycidyl ester of dimer acid, trifunctional (or tetrafunctional) glycidylamine And glycidylamine of naphthalene resin. These may be used singly or in combination of two or more.
에폭시 수지로서는 불순물 이온인 알칼리 금속 이온, 알칼리토류 금속 이온, 할로겐 이온, 특히 염소 이온이나 가수분해성 염소 등을 300ppm 이하로 감소시킨 고순도품을 이용하는 것이 일렉트로 마이그레이션 방지나 금속 도체 회로의 부식 방지의 관점에서 바람직하다.As an epoxy resin, the use of high purity products having reduced alkali metal ions, alkaline earth metal ions, halogen ions, especially chlorine ions or hydrolyzable chlorine, such as chlorine ions or hydrolysable chlorine to 300 ppm or less, is recommended from the viewpoint of preventing electro migration and corrosion of metal conductor circuits. desirable.
에폭시 수지 등의 열경화성 수지의 양은 감광성 접착제 전량에 대하여 10 내지 80질량%인 것이 바람직하고, 감광성 접착제의 신뢰성의 관점에서 20 내지 60질량%인 것이 보다 바람직하다. 이 양이 80질량%를 초과하면, 감광성 접착제의 점도가 높아져 인쇄성이 저하하는 경향이 있다. 한편, 10질량% 미만이면, 충분한 열압착성 및 고온 접착성이 얻어지지 않게 되는 경향이 있다. 열경화성 수지의 양의 상한치 및 하한치는, 감광성 접착제 전량에 대하여 10질량%, 20질량%, 33질량%, 42.5질량%, 60질량% 또는 80질량%일 수도 있다.It is preferable that it is 10-80 mass% with respect to the photosensitive adhesive whole quantity, and, as for quantity of thermosetting resins, such as an epoxy resin, it is more preferable that it is 20-60 mass% from a viewpoint of the reliability of a photosensitive adhesive agent. When this amount exceeds 80 mass%, the viscosity of the photosensitive adhesive agent becomes high and there exists a tendency for printability to fall. On the other hand, when it is less than 10 mass%, there exists a tendency for sufficient thermocompression property and high temperature adhesiveness not to be obtained. 10 mass%, 20 mass%, 33 mass%, 42.5 mass%, 60 mass%, or 80 mass% may be sufficient as the upper limit and the lower limit of the quantity of a thermosetting resin with respect to the photosensitive adhesive whole quantity.
(A) 열경화성 수지로서는 5% 질량 감소 온도가 150℃ 이상인 것이 바람직하고, 180℃ 이상인 것이 보다 바람직하고, 200℃ 이상인 것이 보다 더 바람직하다. 여기서, 5% 질량 감소 온도란, 열경화성 수지를 시차열 열중량 동시 측정 장치(SII 나노테크놀로지 제조: TG/DTA6300)를 이용하여, 승온 속도 10℃/min, 질소 플로우(400㎖/min)하에서 측정하였을 때의 5% 질량 감소 온도이다. 5% 질량 감소 온도가 높은 열경화성 수지를 적용함으로써, 열압착 또는 열경화시에 열경화성 수지가 휘발하는 것을 억제할 수 있다. 이러한 내열성을 갖는 열경화성 수지로서는 분자 내에 방향환을 갖는 에폭시 수지를 들 수 있으며, 접착성, 내열성의 관점에서 특히 3관능형(또는 4관능형)의 글리시딜아민, 비스페놀 A형(또는 AD형, S형, F형)의 글리시딜에테르가 바람직하게 이용된다.(A) It is preferable that 5% mass reduction temperature is 150 degreeC or more as a thermosetting resin, It is more preferable that it is 180 degreeC or more, It is still more preferable that it is 200 degreeC or more. Here, the 5% mass reduction temperature is measured under a temperature increase rate of 10 ° C./min and a nitrogen flow (400 mL / min) using a differential thermal thermogravimetry simultaneous measurement device (TG / DTA6300 manufactured by SII Nanotechnology) as a thermosetting resin. It is the 5% mass reduction temperature at the time of doing. By applying the thermosetting resin with a high 5% mass reduction temperature, volatilization of the thermosetting resin at the time of thermocompression bonding or thermosetting can be suppressed. Examples of the thermosetting resin having such heat resistance include epoxy resins having an aromatic ring in the molecule, and particularly from the viewpoint of adhesiveness and heat resistance, trifunctional (or tetrafunctional) glycidylamine and bisphenol A (or AD type) , S-type, F-type) glycidyl ether is preferably used.
본 실시 형태에 관한 감광성 접착제는 열경화 개시제(경화 촉진제)를 함유하는 것이 바람직하다. 열경화 개시제로서는 가열에 의해 에폭시 수지의 경화 또는 중합을 촉진하는 화합물이면 특별히 제한은 없으며, 예를 들면 페놀계 화합물, 지방족 아민, 지환족 아민, 방향족 폴리아민, 폴리아미드, 지방족 산 무수물, 지환족 산 무수물, 방향족 산 무수물, 디시안디아미드, 유기산 디히드라지드, 3불화붕소 아민 착체, 이미다졸류, 디시안디아미드 유도체, 디카르복실산 디히드라지드, 트리페닐포스핀, 테트라페닐포스포늄테트라페닐보레이트, 2-에틸-4-메틸이미다졸-테트라페닐보레이트, 2-[(3,5-디메틸피라졸릴)카르보닐아미노]에틸메타크릴레이트, 메타크릴산 2-(0-[1'-메틸프로필리덴아미노]카르복시아미노)에틸, 1,8-디아자비시클로[5,4,0]운데센-7-테트라페닐보레이트 및 제3급 아민을 들 수 있다. 이들 중에서도 용제를 함유하지 않을 때의 용해성, 분산성의 관점에서 이미다졸류가 바람직하게 이용된다. 열경화 개시제의 양은 에폭시 수지 등의 열경화성 수지 100질량부에 대하여 0.01 내지 50질량부가 바람직하다. 또한, 접착성, 내열성, 보존 안정성의 관점에서도 이미다졸류가 특히 바람직하다. 열경화 개시제의 양의 상한치 및 하한치는, 열경화성 수지 100질량부에 대하여 0.01질량부, 0.67질량부, 1질량부 또는 50질량부일 수도 있다.It is preferable that the photosensitive adhesive agent concerning this embodiment contains a thermosetting initiator (hardening accelerator). The thermosetting initiator is not particularly limited as long as it is a compound that promotes curing or polymerization of the epoxy resin by heating, and examples thereof include phenolic compounds, aliphatic amines, alicyclic amines, aromatic polyamines, polyamides, aliphatic acid anhydrides, and alicyclic acids. Anhydride, aromatic acid anhydride, dicyandiamide, organic acid dihydrazide, boron trifluoride amine complex, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate , 2-ethyl-4-methylimidazole-tetraphenylborate, 2-[(3,5-dimethylpyrazolyl) carbonylamino] ethyl methacrylate, methacrylic acid 2- (0- [1'-methyl Propylideneamino] carboxyamino) ethyl, 1,8-diazabicyclo [5,4,0] undecene-7-tetraphenylborate, and tertiary amines. Among these, imidazoles are preferably used from the viewpoint of solubility and dispersibility when no solvent is contained. As for the quantity of a thermosetting initiator, 0.01-50 mass parts is preferable with respect to 100 mass parts of thermosetting resins, such as an epoxy resin. Moreover, imidazole is especially preferable also from a viewpoint of adhesiveness, heat resistance, and storage stability. The upper limit and the lower limit of the amount of the thermosetting initiator may be 0.01 parts by mass, 0.67 parts by mass, 1 part by mass, or 50 parts by mass with respect to 100 parts by mass of the thermosetting resin.
이미다졸류로서는 반응 개시 온도가 50℃ 이상인 것이 바람직하고, 80℃ 이상인 것이 보다 바람직하고, 100℃ 이상인 것이 가장 바람직하다. 반응 개시 온도가 50℃ 미만이면 감광성 접착제의 보존 안정성이 저하하기 때문에, 감광성 접착제의 점도가 상승하여 막 두께의 제어가 곤란해지는 경향이 있다.As imidazole, it is preferable that reaction start temperature is 50 degreeC or more, It is more preferable that it is 80 degreeC or more, It is most preferable that it is 100 degreeC or more. Since the storage stability of the photosensitive adhesive agent will fall when reaction start temperature is less than 50 degreeC, there exists a tendency for the viscosity of a photosensitive adhesive agent to rise and it becomes difficult to control a film thickness.
이미다졸류로서는 바람직하게는 평균 입경 10㎛ 이하, 보다 바람직하게는 8㎛ 이하, 가장 바람직하게는 5㎛ 이하의 화합물을 사용하는 것이 바람직하다. 이러한 평균 입경의 이미다졸류를 이용함으로써 감광성 접착제의 점도 변화를 억제할 수 있고, 또한 이미다졸류의 침강을 억제할 수 있다. 또한, 감광성 접착제의 박막을 형성하였을 때에는 표면의 요철을 감소시킴으로써 균일한 막을 얻을 수 있다. 또한, 경화시에는 감광성 접착제의 경화를 균일하게 진행시킬 수 있기 때문에, 아웃 가스를 감소시킬 수 있다고 생각하고 있다. 또한, 에폭시 수지에 대한 용해성이 부족한 이미다졸을 사용함으로써 양호한 보존 안정성을 얻을 수 있다.As imidazole, Preferably, it is preferable to use the compound whose average particle diameter is 10 micrometers or less, More preferably, it is 8 micrometers or less, Most preferably, it is 5 micrometers or less. By using the imidazole of such average particle diameter, the viscosity change of the photosensitive adhesive agent can be suppressed, and sedimentation of imidazole can be suppressed. In addition, when a thin film of the photosensitive adhesive agent is formed, a uniform film can be obtained by reducing the surface irregularities. In addition, when hardening, since hardening of a photosensitive adhesive agent can be advanced uniformly, it is thought that the outgas can be reduced. In addition, good storage stability can be obtained by using an imidazole lacking solubility in an epoxy resin.
이미다졸류로서는 에폭시 수지에 용해하는 이미다졸류도 사용할 수 있다. 이러한 이미다졸류를 이용함으로써 감광성 접착제의 박막을 형성하였을 때의 표면의 요철을 보다 감소시킬 수 있다. 이러한 이미다졸류로서는 한정은 되지 않지만, 2-에틸-4-메틸이미다졸, 1-시아노에틸-2-메틸이미다졸, 1-시아노에틸-2-에틸-4-메틸이미다졸, 1-시아노에틸-2-페닐이미다졸, 1-벤질-2-메틸이미다졸, 1-벤질-2-페닐이미다졸 등을 들 수 있다.As imidazole, imidazole which melt | dissolves in an epoxy resin can also be used. By using such imidazoles, the unevenness | corrugation of the surface at the time of forming the thin film of the photosensitive adhesive agent can be reduced further. Examples of such imidazoles include, but are not limited to, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-methylimidazole, and 1-cyanoethyl-2-ethyl-4-methylimidazole. And 1-cyanoethyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole and the like.
감광성 접착제는 경화제로서 페놀계 화합물을 포함할 수도 있다. 페놀계 화합물로서는 분자 중에 적어도 2개 이상의 페놀성 수산기를 갖는 페놀계 화합물이 보다 바람직하다. 이러한 화합물로서는, 예를 들면 페놀노볼락, 크레졸노볼락, t-부틸페놀노볼락, 디시클로펜타디엔크레졸노볼락, 디시클로펜타디엔페놀노볼락, 크실릴렌 변성 페놀노볼락, 나프톨계 화합물, 트리스페놀계 화합물, 테트라키스페놀노볼락, 비스페놀 A 노볼락, 폴리-p-비닐페놀 및 페놀아르알킬 수지를 들 수 있다. 이들 중에서도 수 평균 분자량이 400 내지 4000의 범위 내인 것이 바람직하다. 이에 의해 반도체 장치의 조립에서의 가열시에 반도체 소자 또는 장치 등의 오염의 원인이 되는 가열시의 아웃 가스를 억제할 수 있다. 페놀계 화합물의 양은 열경화성 수지 100질량부에 대하여 50 내지 120질량부인 것이 바람직하고, 70 내지 100질량부인 것이 보다 바람직하다.The photosensitive adhesive may contain a phenolic compound as a curing agent. As a phenol type compound, the phenol type compound which has at least 2 or more phenolic hydroxyl group in a molecule | numerator is more preferable. As such a compound, For example, a phenol novolak, a cresol novolak, t-butyl phenol novolak, a dicyclopentadiene cresol novolak, a dicyclopentadiene phenol novolak, a xylylene modified phenol novolak, a naphthol type compound, Trisphenol type compounds, tetrakisphenol novolak, bisphenol A novolak, poly-p-vinylphenol, and a phenol aralkyl resin are mentioned. Among these, it is preferable that a number average molecular weight exists in the range of 400-4000. Thereby, the outgas at the time of heating which causes contamination of a semiconductor element, an apparatus, etc. at the time of the heating at the assembly of a semiconductor device can be suppressed. It is preferable that it is 50-120 mass parts with respect to 100 mass parts of thermosetting resins, and, as for the quantity of a phenol type compound, it is more preferable that it is 70-100 mass parts.
(B) 방사선 중합성 화합물로서는 에틸렌성 불포화기를 갖는 화합물을 들 수 있으며, 에틸렌성 불포화기로서는 비닐기, 알릴기, 프로파르길기, 부테닐기, 에티닐기, 페닐에티닐기, 말레이미드기, 나드이미드기, (메트)아크릴기 등을 들 수 있다. 반응성의 관점에서 (메트)아크릴기가 바람직하고, 단관능 (메트)아크릴레이트를 포함하는 것이 바람직하다. 단관능 (메트)아크릴레이트를 첨가함으로써, 특히 B 스테이지화를 위한 노광시에 감광성 접착제의 가교 밀도를 감소시킬 수 있고, 노광 후의 열압착성, 저응력성 및 접착성을 양호한 상태로 할 수 있다.Examples of the (B) radiation polymerizable compound include compounds having an ethylenically unsaturated group, and examples of the ethylenically unsaturated group include vinyl, allyl, propargyl, butenyl, ethynyl, phenylethynyl, maleimide and nadyi. A mid group, a (meth) acryl group, etc. are mentioned. From a reactive viewpoint, a (meth) acryl group is preferable and it is preferable to contain monofunctional (meth) acrylate. By adding monofunctional (meth) acrylate, the crosslinking density of the photosensitive adhesive agent can be reduced, especially at the time of exposure for B stage formation, and it can be made the favorable state of thermocompression property after exposure, low stress, and adhesiveness. .
단관능 (메트)아크릴레이트의 5% 질량 감소 온도는 100℃ 이상인 것이 바람직하고, 120℃ 이상인 것이 보다 바람직하고, 150℃ 이상인 것이 보다 더 바람직하고, 180℃ 이상인 것이 가장 바람직하다. 여기서, 5% 질량 감소 온도란, 단관능 (메트)아크릴레이트를 시차열 열중량 동시 측정 장치(SII 나노테크놀로지 제조: TG/DTA6300)를 이용하여, 승온 속도 10℃/min, 질소 플로우(400㎖/min)하에서 측정하였을 때의 5% 질량 감소 온도이다. 5% 질량 감소 온도가 높은 단관능 (메트)아크릴레이트를 적용함으로써, 노광에 의해 B 스테이지화한 후에 잔존한 미반응의 단관능 (메트)아크릴레이트가 열압착 또는 열경화시에 휘발하는 것을 억제할 수 있다.It is preferable that the 5% mass reduction temperature of monofunctional (meth) acrylate is 100 degreeC or more, It is more preferable that it is 120 degreeC or more, It is still more preferable that it is 150 degreeC or more, It is most preferable that it is 180 degreeC or more. Here, 5% mass reduction temperature is a monofunctional (meth) acrylate using a differential thermal thermogravimetry simultaneous measurement apparatus (SII nanotechnology company make: TG / DTA6300),
이러한 단관능 (메트)아크릴레이트이면 특별히 한정은 되지 않지만, 글리시딜기 함유 (메트)아크릴레이트, 페놀 EO 변성 (메트)아크릴레이트, 페놀 PO 변성 (메트)아크릴레이트, 노닐페놀 EO 변성 (메트)아크릴레이트, 노닐페놀 PO 변성 (메트)아크릴레이트, 페놀성 수산기 함유 (메트)아크릴레이트, 수산기 함유 (메트)아크릴레이트, 페닐페놀글리시딜에테르(메트)아크릴레이트 및 페녹시에틸(메트)아크릴레이트 등의 방향족계 (메트)아크릴레이트, 이미드기 함유 (메트)아크릴레이트, 카르복실기 함유 (메트)아크릴레이트, 이소보로닐 함유 (메트)아크릴레이트, 디시클로펜타디에닐기 함유 (메트)아크릴레이트 및 이소보로닐(메트)아크릴레이트 등을 이용할 수 있다.If it is such monofunctional (meth) acrylate, it will not specifically limit, Glycidyl group containing (meth) acrylate, phenol EO modified (meth) acrylate, phenol PO modified (meth) acrylate, nonylphenol EO modified (meth) Acrylate, nonylphenol PO modified (meth) acrylate, phenolic hydroxyl group-containing (meth) acrylate, hydroxyl group-containing (meth) acrylate, phenylphenol glycidyl ether (meth) acrylate and phenoxyethyl (meth) acrylic Aromatic (meth) acrylates, such as an acrylate, an imide group containing (meth) acrylate, a carboxyl group containing (meth) acrylate, isoboroyl containing (meth) acrylate, and dicyclopentadienyl group containing (meth) acrylate And isoboroyl (meth) acrylate can be used.
단관능 (메트)아크릴레이트로서는 B 스테이지화 후의 피착체와의 밀착성, 경화 후의 접착성, 내열성의 관점에서 우레탄기, 이소시아누르기, 이미드기 또는 수산기를 갖는 것이 바람직하며, 특히 분자 내에 이미드기를 갖는 단관능 (메트)아크릴레이트인 것이 바람직하다.As monofunctional (meth) acrylate, it is preferable to have a urethane group, an isocyanuric group, an imide group, or a hydroxyl group from a viewpoint of adhesiveness with the to-be-adhered body after B stage formation, adhesiveness after hardening, and heat resistance, and especially imide group in a molecule | numerator It is preferable that it is monofunctional (meth) acrylate which has.
에폭시기를 갖는 단관능 (메트)아크릴레이트도 바람직하게 이용할 수 있다. 에폭시기를 갖는 단관능 (메트)아크릴레이트로서는 보존 안정성, 접착성, 저아웃 가스성, 내열 신뢰성 및 내습 신뢰성의 관점에서 5% 질량 감소 온도가 150℃ 이상인 것이 바람직하고, 180℃ 이상인 것이 더욱 바람직하고, 200℃ 이상인 것이 가장 바람직하다. 이러한 에폭시기를 갖는 단관능 (메트)아크릴레이트로서는 특별히 한정은 되지 않지만, 5% 질량 감소 온도가 150℃ 이상인 다관능 에폭시 수지를 원료로서 이용함으로써 상기 내열성을 만족할 수 있다.Monofunctional (meth) acrylate which has an epoxy group can also be used preferably. As monofunctional (meth) acrylate which has an epoxy group, it is preferable that a 5% mass reduction temperature is 150 degreeC or more from a viewpoint of storage stability, adhesiveness, low outgas resistance, heat resistance reliability, and moisture resistance reliability, and it is more preferable that it is 180 degreeC or more. It is most preferable that it is 200 degreeC or more. Although it does not specifically limit as monofunctional (meth) acrylate which has such an epoxy group, The said heat resistance can be satisfy | filled by using the polyfunctional epoxy resin whose 5% mass reduction temperature is 150 degreeC or more as a raw material.
에폭시기를 갖는 단관능 (메트)아크릴레이트로서는 특별히 한정은 되지 않지만, 글리시딜메타크릴레이트, 글리시딜아크릴레이트, 4-히드록시부틸아크릴레이트글리시딜에테르, 4-히드록시부틸메타크릴레이트글리시딜에테르 외에, 에폭시기와 반응하는 관능기 및 에틸렌성 불포화기를 갖는 화합물과 다관능 에폭시 수지를 반응시켜 얻어지는 화합물 등을 들 수 있다. 상기 에폭시기와 반응하는 관능기로서는 특별히 한정은 되지 않지만, 이소시아네이트기, 카르복실기, 페놀성 수산기, 수산기, 산 무수물, 아미노기, 티올기, 아미드기 등을 들 수 있다. 이들 화합물은 1종을 단독으로 또는 2종 이상을 조합하여 사용할 수 있다.Although it does not specifically limit as monofunctional (meth) acrylate which has an epoxy group, Glycidyl methacrylate, glycidyl acrylate, 4-hydroxybutyl acrylate glycidyl ether, 4-hydroxybutyl methacrylate In addition to glycidyl ether, the compound etc. which are obtained by making the compound which has a functional group and ethylenically unsaturated group which react with an epoxy group, and polyfunctional epoxy resin react are mentioned. Although it does not specifically limit as a functional group which reacts with the said epoxy group, Isocyanate group, a carboxyl group, phenolic hydroxyl group, a hydroxyl group, an acid anhydride, an amino group, a thiol group, an amide group, etc. are mentioned. These compounds may be used singly or in combination of two or more.
에폭시기를 갖는 단관능 (메트)아크릴레이트는, 예를 들면 트리페닐포스핀이나 테트라부틸암모늄브로마이드의 존재하에 1분자 중에 적어도 2개 이상의 에폭시기를 갖는 다관능 에폭시 수지와, 에폭시기 1당량에 대하여 0.1 내지 0.9당량의 (메트)아크릴산을 반응시킴으로써 얻어진다. 또한, 디부틸주석디라우레이트의 존재하에 다관능 이소시아네이트 화합물과 히드록시기 함유 (메트)아크릴레이트 및 히드록시기 함유 에폭시 화합물을 반응시키거나, 또는 다관능 에폭시 수지와 이소시아네이트기 함유 (메트)아크릴레이트를 반응시킴으로써 글리시딜기 함유 우레탄 (메트)아크릴레이트 등이 얻어진다.The monofunctional (meth) acrylate having an epoxy group is, for example, 0.1 to 1 equivalent of a polyfunctional epoxy resin having at least two or more epoxy groups in one molecule in the presence of triphenylphosphine or tetrabutylammonium bromide, and one equivalent of an epoxy group. It is obtained by reacting 0.9 equivalent of (meth) acrylic acid. Further, by reacting a polyfunctional isocyanate compound with a hydroxy group-containing (meth) acrylate and a hydroxy group-containing epoxy compound in the presence of dibutyltin dilaurate, or by reacting a polyfunctional epoxy resin with an isocyanate group-containing (meth) acrylate Glycidyl group containing urethane (meth) acrylate etc. are obtained.
에폭시기를 갖는 단관능 (메트)아크릴레이트는 보존 안정성, 접착성, 반도체 장치의 조립 가열시 및 반도체 장치의 조립 후의 패키지의 저아웃 가스성, 내열성 및 내습성의 관점에서, 5% 질량 감소 온도가 접착 필름(감광성 접착제층) 형성시의 가열 건조에 의한 휘발 또는 표면에의 편석을 억제할 수 있는 점에서 150℃ 이상인 것이 바람직하고, 열경화시의 아웃 가스에 의한 공극 및 박리나 접착성의 저하를 억제할 수 있는 점에서 180℃ 이상인 것이 더욱 바람직하고, 200℃ 이상인 것이 보다 더 바람직하고, 리플로우시에 미반응의 성분이 휘발함에 따른 공극 및 박리를 억제할 수 있는 점에서 260℃ 이상인 것이 가장 바람직하다. 이러한 에폭시기를 갖는 단관능 (메트)아크릴레이트로서는 분자 내에 방향환을 갖는 화합물이 바람직하다.The monofunctional (meth) acrylate having an epoxy group has a 5% mass reduction temperature in terms of storage stability, adhesion, low heating gas resistance, heat resistance and moisture resistance of the package during assembling heating of the semiconductor device and after assembling the semiconductor device. It is preferable that it is 150 degreeC or more from the point which can suppress the volatilization by heat-drying at the time of adhesive film (photosensitive adhesive bond layer) formation, or segregation to the surface, and it is effective to reduce the space | gap by the outgas at the time of thermosetting, peeling, and adhesiveness fall. It is more preferable that it is 180 degreeC or more from the point which can be suppressed, It is still more preferable that it is 200 degreeC or more, It is most preferable that it is 260 degreeC or more from the point which can suppress the space | gap and peeling by volatilization of the unreacted component at the time of reflow. desirable. As monofunctional (meth) acrylate which has such an epoxy group, the compound which has an aromatic ring in a molecule | numerator is preferable.
또한, 에폭시기를 갖는 단관능 (메트)아크릴레이트로서는, 불순물 이온인 알칼리 금속 이온, 알칼리토류 금속 이온, 할로겐 이온, 특히 염소 이온이나 가수분해성 염소 등을 1000ppm 이하로 감소시킨 고순도품을 이용하는 것이 일렉트로 마이그레이션 방지나 금속 도체 회로의 부식 방지의 관점에서 바람직하다. 예를 들면, 알칼리 금속 이온, 알칼리토류 금속 이온, 할로겐 이온 등을 감소시킨 다관능 에폭시 수지를 원료로서 이용함으로써 상기 불순물 이온 농도를 만족할 수 있다. 전체 염소 함량은 JIS K7243-3에 준하여 측정할 수 있다.Moreover, as monofunctional (meth) acrylate which has an epoxy group, it is electromigration to use the high purity goods which reduced the alkali metal ion, alkaline earth metal ion, halogen ion which are impurity ion, especially chlorine ion and hydrolysable chlorine to 1000 ppm or less. It is preferable from the standpoint of prevention and corrosion prevention of the metal conductor circuit. For example, the impurity ion concentration can be satisfied by using as a raw material a polyfunctional epoxy resin having reduced alkali metal ions, alkaline earth metal ions, halogen ions and the like. The total chlorine content can be measured according to JIS K7243-3.
상기 내열성과 순도를 만족하는 에폭시기를 갖는 단관능 (메트)아크릴레이트 성분으로서는 특별히 한정은 되지 않지만, 비스페놀 A형(또는 AD형, S형, F형) 글리시딜에테르, 수소 첨가 비스페놀 A형 글리시딜에테르, 에틸렌옥시드 부가체 비스페놀 A 및/또는 F형 글리시딜에테르, 프로필렌옥시드 부가체 비스페놀 A 및/또는 F형 글리시딜에테르, 페놀노볼락 수지의 글리시딜에테르, 크레졸노볼락 수지의 글리시딜에테르, 비스페놀 A 노볼락 수지의 글리시딜에테르, 나프탈렌 수지의 글리시딜에테르, 3관능형(또는 4관능형)의 글리시딜에테르, 디시클로펜타디엔페놀 수지의 글리시딜에테르, 다이머산의 글리시딜에스테르, 3관능형(또는 4관능형)의 글리시딜아민 및 나프탈렌 수지의 글리시딜아민 등을 원료로 한 것을 들 수 있다.Although it does not specifically limit as a monofunctional (meth) acrylate component which has an epoxy group which satisfy | fills the said heat resistance and purity, Bisphenol A type (or AD type, S type, F type) glycidyl ether, hydrogenated bisphenol A type glyc Cedyl ether, ethylene oxide adduct bisphenol A and / or F glycidyl ether, propylene oxide adduct bisphenol A and / or F glycidyl ether, glycidyl ether of phenol novolak resin, cresolno Glycidyl ether of volac resin, Glycidyl ether of bisphenol A novolak resin, Glycidyl ether of naphthalene resin, Glycidyl ether of trifunctional type (or tetrafunctional type), Glyc of dicyclopentadiene phenol resin The thing which used as a raw material the cylyl ether, the glycidyl ester of dimer acid, the trifunctional (or tetrafunctional) glycidylamine, and the glycidylamine of naphthalene resin etc. is mentioned.
특히, 열압착성, 저응력성 및 접착성을 개선하기 위해서는 에폭시기 및 에틸렌성 불포화기의 수가 각각 3개 이하인 것이 바람직하며, 특히 에틸렌성 불포화기의 수는 2개 이하인 것이 바람직하다. 이러한 화합물로서는 특별히 한정은 되지 않지만, 하기 화학식 (1), (2), (3), (4) 또는 (5)로 표시되는 화합물 등이 바람직하게 이용된다. 하기 화학식 (1) 내지 (5)에 있어서, R12 및 R16은 수소 원자 또는 메틸기를 나타내고, R10, R11, R13 및 R14는 2가의 유기기를 나타내고, R15, R17 및 R18은 에폭시기 또는 에틸렌성 불포화기를 갖는 유기기를 나타낸다. f는 정수를 나타낸다. f는 예를 들면 1 내지 10이다.In particular, in order to improve thermocompressability, low stress and adhesion, the number of epoxy groups and ethylenically unsaturated groups is preferably 3 or less, and particularly preferably the number of ethylenically unsaturated groups is 2 or less. Although it does not specifically limit as such a compound, The compound etc. which are represented by following General formula (1), (2), (3), (4) or (5) are used preferably. In the following formulas (1) to (5), R 12 and R 16 represent a hydrogen atom or a methyl group, R 10 , R 11 , R 13 and R 14 represent a divalent organic group, and R 15 , R 17 and R 18 represents an organic group having an epoxy group or an ethylenically unsaturated group. f represents an integer. f is 1-10, for example.
상기 단관능 (메트)아크릴레이트의 양은 (B) 방사선 중합성 화합물에 대하여 20 내지 100질량%인 것이 바람직하고, 40 내지 100질량%인 것이 보다 바람직하고, 50 내지 100질량%인 것이 가장 바람직하다. 단관능 (메트)아크릴레이트를 상술한 양으로 함으로써 B 스테이지화 후의 피착체와의 밀착성 및 열압착성을 향상시킬 수 있다.It is preferable that the quantity of the said monofunctional (meth) acrylate is 20-100 mass% with respect to the (B) radiation polymeric compound, It is more preferable that it is 40-100 mass%, It is most preferable that it is 50-100 mass%. . By making monofunctional (meth) acrylate the quantity mentioned above, adhesiveness with the to-be-adhered body after B stage formation and thermocompression property can be improved.
(B) 방사선 중합성 화합물로서는 2관능 이상의 (메트)아크릴레이트를 함유할 수도 있다. 이러한 아크릴레이트로서는 특별히 제한은 되지 않지만, 디에틸렌글리콜디아크릴레이트, 트리에틸렌글리콜디아크릴레이트, 테트라에틸렌글리콜디아크릴레이트, 디에틸렌글리콜디메타크릴레이트, 트리에틸렌글리콜디메타크릴레이트, 테트라에틸렌글리콜디메타크릴레이트, 트리메틸올프로판디아크릴레이트, 트리메틸올프로판트리아크릴레이트, 트리메틸올프로판디메타크릴레이트, 트리메틸올프로판트리메타크릴레이트, 1,4-부탄디올디아크릴레이트, 1,6-헥산디올디아크릴레이트, 1,4-부탄디올디메타크릴레이트, 1,6-헥산디올디메타크릴레이트, 펜타에리트리톨트리아크릴레이트, 펜타에리트리톨테트라아크릴레이트, 펜타에리트리톨트리메타크릴레이트, 펜타에리트리톨테트라메타크릴레이트, 디펜타에리트리톨헥사아크릴레이트, 디펜타에리트리톨헥사메타크릴레이트, 스티렌, 디비닐벤젠, 4-비닐톨루엔, 4-비닐피리딘, N-비닐피롤리돈, 2-히드록시에틸아크릴레이트, 2-히드록시에틸메타크릴레이트, 1,3-아크릴로일옥시-2-히드록시프로판, 1,2-메타크릴로일옥시-2-히드록시프로판, 메틸렌비스아크릴아미드, N,N-디메틸아크릴아미드, N-메틸올아크릴아미드, 트리스(β-히드록시에틸)이소시아누레이트의 트리아크릴레이트, 하기 화학식 (6)으로 표시되는 화합물, 우레탄아크릴레이트, 우레탄메타크릴레이트 및 요소아크릴레이트 등을 들 수 있다.(B) As a radiation polymeric compound, you may contain the bifunctional or more (meth) acrylate. Although there is no restriction | limiting in particular as such an acrylate, Diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol Dimethacrylate, trimethylolpropanediacrylate, trimethylolpropanetriacrylate, trimethylolpropanedimethacrylate, trimethylolpropanetrimethacrylate, 1,4-butanedioldiacrylate, 1,6-hexanediol Diacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol dimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol Tetramethacrylate, dipentaerythritol hexaacrylate, dipentaerythr Tolhexamethacrylate, styrene, divinylbenzene, 4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 1,3- Acryloyloxy-2-hydroxypropane, 1,2-methacryloyloxy-2-hydroxypropane, methylenebisacrylamide, N, N-dimethylacrylamide, N-methylolacrylamide, tris (β Triacrylate of -hydroxyethyl) isocyanurate, the compound represented by following formula (6), urethane acrylate, urethane methacrylate, urea acrylate, etc. are mentioned.
상기 화학식 (6) 중, R19 및 R20은 각각 독립적으로 수소 원자 또는 메틸기를 나타내고, g 및 h는 각각 독립적으로 1 내지 20의 정수를 나타낸다.In said Formula (6), R <19> and R <20> represents a hydrogen atom or a methyl group each independently, and g and h each independently represent the integer of 1-20.
이들 방사선 중합성 화합물은 1종을 단독으로 또는 2종 이상을 조합하여 사용할 수 있다. 그 중에서도 상기 화학식 (6)으로 표시되는 글리콜 골격을 갖는 방사선 중합성 화합물은 경화 후의 내용제성을 충분히 부여할 수 있으며, 저점도로 높은 5% 질량 감소 온도를 갖는 점에서 바람직하다.These radiation polymerizable compounds can be used individually by 1 type or in combination of 2 or more types. Especially, the radiation polymeric compound which has a glycol skeleton represented by the said General formula (6) can fully provide the solvent resistance after hardening, and is preferable at the point which has a
관능기 당량이 높은 방사선 중합성 화합물을 이용함으로써, 보다 효과적으로 반도체 웨이퍼에 걸리는 응력의 억제(저응력화), 반도체 웨이퍼의 휘어짐의 억제(저휘어짐화)가 가능해진다. 관능기 당량이 높은 방사선 중합성 화합물은, 중합 관능기 당량이 200eq/g 이상인 것이 바람직하고, 300eq/g 이상인 것이 보다 바람직하고, 400eq/g 이상인 것이 가장 바람직하다. 중합 관능기 당량이 200eq/g 이상인 에테르 골격, 우레탄기 및/또는 이소시아누르기를 갖는 방사선 중합성 화합물을 이용함으로써 감광성 접착제의 접착성을 향상시키며, 저응력화, 저휘어짐화로 하는 것이 가능해진다. 중합 관능기 당량이 200eq/g 이상인 방사선 중합성 화합물과 중합 관능기 당량이 200eq/g 미만인 방사선 중합성 화합물을 병용할 수도 있다.By using a radiation polymerizable compound having a high functional group equivalent, it is possible to more effectively suppress the stress applied to the semiconductor wafer (lower stress) and to suppress the warpage of the semiconductor wafer (lower warpage). It is preferable that a polymerization functional group equivalent is 200 eq / g or more, it is more preferable that it is 300 eq / g or more, and, as for the radiation polymeric compound with high functional group equivalent, it is most preferable that it is 400 eq / g or more. By using the radiation polymerizable compound which has an ether skeleton, urethane group, and / or isocyanuric group whose polymerization functional group equivalent is 200 eq / g or more, it becomes possible to improve the adhesiveness of a photosensitive adhesive agent, and to make it low stress and low deflection. The radiation polymerizable compound whose polymerization functional group equivalent is 200 eq / g or more, and the radiation polymerizable compound whose polymerization functional group equivalent is less than 200 eq / g can also be used together.
(B) 방사선 중합성 화합물의 양은 감광성 접착제 전량에 대하여 10 내지 95질량%인 것이 바람직하고, 칩 압착시의 습윤 확대성의 관점에서 20 내지 90질량%인 것이 보다 바람직하고, B 스테이지화 후의 형상 유지의 관점에서 40 내지 90질량%인 것이 가장 바람직하다. (B) 성분이 10질량% 미만이면 B 스테이지화 후의 태크력이 커지는 경향이 있고, 95질량%를 초과하면 열경화 후의 접착 강도가 저하하는 경향이 있다. 방사선 중합성 화합물의 양의 상한치 및 하한치는, 감광성 접착제 전량에 대하여 10질량%, 20질량%, 40질량%, 56.7질량%, 66질량%, 90질량% 또는 95질량%일 수도 있다.(B) It is preferable that the quantity of a radiation polymeric compound is 10-95 mass% with respect to the photosensitive adhesive whole quantity, It is more preferable that it is 20-90 mass% from the viewpoint of the wet expandability at the time of chip bonding, and shape retention after B stage formation It is most preferable that it is 40-90 mass% from a viewpoint. If the component (B) is less than 10% by mass, the tag force after B stage formation tends to be large, and if it exceeds 95% by mass, the adhesive strength after thermosetting tends to decrease. 10 mass%, 20 mass%, 40 mass%, 56.7 mass%, 66 mass%, 90 mass%, or 95 mass% may be sufficient as the upper limit and the lower limit of the quantity of a radiation polymeric compound with respect to the photosensitive adhesive whole quantity.
(B) 방사선 중합성 화합물은 실온(15℃ 내지 30℃)에서 액상인 것이 바람직하며, 메쉬 인쇄판으로부터의 감광성 접착제의 누락성을 고려하면 점도는 5000mPaㆍs 이하인 것이 바람직하고, 인쇄 후의 자기 유동에 의한 평탄화를 더 고려하면 3000mPaㆍs 이하인 것이 보다 바람직하다. 점도가 5000mPaㆍs를 초과하면 감광성 접착제의 점도가 상승하여 인쇄성이 저하하는 경향이 있다.(B) The radiation polymerizable compound is preferably liquid at room temperature (15 ° C. to 30 ° C.), and in view of the omission of the photosensitive adhesive from the mesh printing plate, the viscosity is preferably 5000 mPa · s or less, and the magnetic flux after printing In consideration of further flattening, it is more preferably 3000 mPa · s or less. When viscosity exceeds 5000 mPa * s, the viscosity of a photosensitive adhesive agent rises and there exists a tendency for printability to fall.
(B) 방사선 중합성 화합물로서는 5% 질량 감소 온도가 120℃ 이상인 것이 바람직하고, 150℃ 이상인 것이 보다 바람직하고, 180℃ 이상인 것이 보다 더 바람직하다. 여기서, 5% 질량 감소 온도란, 방사선 중합성 화합물을 시차열 열중량 동시 측정 장치(SII 나노테크놀로지 제조: TG/DTA6300)를 이용하여, 승온 속도 10℃/min, 질소 플로우(400㎖/min)하에서 측정하였을 때의 5% 질량 감소 온도이다. 5% 질량 감소 온도가 높은 방사선 중합성 화합물을 적용함으로써, 미반응의 방사선 중합성 화합물이 열압착 또는 열경화시에 휘발하는 것을 억제할 수 있다.(B) It is preferable that 5% mass reduction temperature is 120 degreeC or more as a radiation polymeric compound, It is more preferable that it is 150 degreeC or more, It is still more preferable that it is 180 degreeC or more. Here, the 5% mass reduction temperature means a temperature increase rate of 10 ° C./min and a nitrogen flow (400 ml / min) using a differential thermal thermogravimetry simultaneous measurement device (SII Nanotechnology Co., Ltd .: TG / DTA6300). It is a 5% mass reduction temperature when measured under. By applying the radiation polymeric compound with a high 5% mass reduction temperature, volatilization at the time of thermocompression bonding or thermosetting can be suppressed.
(C) 광중합 개시제(광개시제)로서는 광중합의 감도 향상의 점에서 파장 365nm의 광에 대한 분자 흡광 계수가 100㎖/gㆍcm 이상인 것이 바람직하고, 200㎖/gㆍcm 이상인 것이 보다 바람직하다. 또한, 분자 흡광 계수는 샘플의 0.001질량% 아세토니트릴 용액을 제조하고, 이 용액에 대하여 분광 광도계(히따찌 하이테크놀로지사 제조, 「U-3310」(상품명))를 이용하여 흡광도를 측정함으로써 구해진다.(C) As a photoinitiator (photoinitiator), it is preferable that the molecular extinction coefficient with respect to the light of wavelength 365nm is 100 ml / g * cm or more, and it is more preferable that it is 200 ml / g * cm or more from the point of the photopolymerization sensitivity improvement. In addition, a molecular extinction coefficient is calculated | required by preparing 0.001 mass% acetonitrile solution of a sample, and measuring the absorbance with this solution using a spectrophotometer (The Hitachi High-Technologies company make, "U-3310" (brand name)). .
이러한 (C) 성분으로서는, 예를 들면 2-벤질-2-디메틸아미노-1-(4-모르폴리노페닐)-부타논-1,2,2-디메톡시-1,2-디페닐에탄-1-온, 1-히드록시-시클로헥실-페닐-케톤, 2-메틸-1-(4-(메틸티오)페닐)-2-모르폴리노프로파논-1,2,4-디에틸티오크산톤, 2-에틸안트라퀴논 및 페난트렌퀴논 등의 방향족 케톤, 벤질디메틸케탈 등의 벤질 유도체, 2-(o-클로로페닐)-4,5-디페닐이미다졸 이량체, 2-(o-클로로페닐)-4,5-디(m-메톡시페닐)이미다졸 이량체, 2-(o-플루오로페닐)-4,5-페닐이미다졸 이량체, 2-(o-메톡시페닐)-4,5-디페닐이미다졸 이량체, 2-(p-메톡시페닐)-4,5-디페닐이미다졸 이량체, 2,4-디(p-메톡시페닐)-5-페닐이미다졸 이량체 및 2-(2,4-디메톡시페닐)-4,5-디페닐이미다졸 이량체 등의 2,4,5-트리아릴이미다졸 이량체, 9-페닐아크리딘 및 1,7-비스(9,9'-아크리디닐)헵탄 등의 아크리딘 유도체, 비스(2,6-디메톡시벤조일)-2,4,4-트리메틸-펜틸포스핀옥시드 및 비스(2,4,6,-트리메틸벤조일)-페닐포스핀옥시드 등의 비스아실포스핀옥시드 및 말레이미드를 갖는 화합물 등을 들 수 있다. 이들은 1종을 단독으로 또는 2종 이상을 조합하여 사용할 수 있다.As such a component (C), for example, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2,2-dimethoxy-1,2-diphenylethane- 1-one, 1-hydroxycyclohexyl-phenyl-ketone, 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropanone-1,2,4-diethylthioke Aromatic ketones such as santone, 2-ethylanthraquinone and phenanthrenequinone, benzyl derivatives such as benzyldimethyl ketal, 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, and 2- (o- Chlorophenyl) -4,5-di (m-methoxyphenyl) imidazole dimer, 2- (o-fluorophenyl) -4,5-phenylimidazole dimer, 2- (o-methoxyphenyl ) -4,5-diphenylimidazole dimer, 2- (p-methoxyphenyl) -4,5-diphenylimidazole dimer, 2,4-di (p-methoxyphenyl) -5 2,4,5-triarylimidazole dimer, 9-phenyl, such as -phenylimidazole dimer and 2- (2,4-dimethoxyphenyl) -4,5-diphenylimidazole dimer Acridine derivatives such as acridine and 1,7-bis (9,9'-acridinyl) heptane Bisacylphosphine oxides such as bis (2,6-dimethoxybenzoyl) -2,4,4-trimethyl-pentylphosphine oxide and bis (2,4,6, -trimethylbenzoyl) -phenylphosphine oxide; and The compound which has maleimide, etc. are mentioned. These may be used singly or in combination of two or more.
상기 광중합 개시제 중에서도 용제를 함유하지 않는 감광성 접착제에서의 용해성의 점에서 2,2-디메톡시-1,2-디페닐에탄-1-온, 2-벤질-2-디메틸아미노-1-(4-모르폴리노페닐)-부타논-1,2,2-디메톡시-1,2-디페닐에탄-1-온 및 2-메틸-1-(4-(메틸티오)페닐)-2-모르폴리노프로판-1-온이 바람직하게 이용된다. 또한, 공기 분위기하에서도 노광에 의해 감광성 접착제층의 B 스테이지화가 가능해지는 점에서는 2-벤질-2-디메틸아미노-1-(4-모르폴리노페닐)-부타논-1,2,2-디메톡시-1,2-디페닐에탄-1-온 및 2-메틸-1-(4-(메틸티오)페닐)-2-모르폴리노프로판-1-온이 바람직하게 이용된다.2,2-dimethoxy-1,2-diphenylethan-1-one and 2-benzyl-2-dimethylamino-1- (4-in terms of solubility in a photosensitive adhesive agent containing no solvent among the photopolymerization initiators described above Morpholinophenyl) -butanone-1,2,2-dimethoxy-1,2-diphenylethan-1-one and 2-methyl-1- (4- (methylthio) phenyl) -2-morpholi Nopropan-1-one is preferably used. In addition, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2,2-dimethon in that the B-staging of the photosensitive adhesive layer can be achieved by exposure even under an air atmosphere. Toxy-1,2-diphenylethan-1-one and 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropan-1-one are preferably used.
(C) 성분은 방사선의 조사에 의해 에폭시 수지의 중합 및/또는 반응을 촉진하는 기능을 발현하는 광개시제를 포함할 수도 있다. 이러한 광개시제로서는, 예를 들면 방사선 조사에 의해 염기를 발생하는 광염기 발생제, 방사선 조사에 의해 산을 발생하는 광산 발생제 등을 들 수 있으며, 광염기 발생제가 특히 바람직하다.(C) component may also contain the photoinitiator which expresses the function which promotes superposition | polymerization and / or reaction of an epoxy resin by irradiation of a radiation. As such a photoinitiator, the photobase generator which generate | occur | produces a base by irradiation, the photoacid generator which generate | occur | produce an acid by irradiation, etc. are mentioned, for example, A photobase generator is especially preferable.
광염기 발생제를 이용함으로써, 감광성 접착제의 피착체에의 고온시의 접착성(고온 접착성) 및 내습성을 더 향상시킬 수 있다. 이 이유로서는 광염기 발생제로부터 생성된 염기가 에폭시 수지의 경화 촉매로서 효율적으로 작용함으로써 가교 밀도를 한층 더 높일 수 있는 것, 또한 생성된 경화 촉매가 기판 등을 부식시키는 일이 적은 것을 들 수 있다. 감광성 접착제에 광염기 발생제를 함유시킴으로써 가교 밀도를 향상시킬 수 있고, 고온 방치시의 아웃 가스를 보다 감소시킬 수 있다. 또한, 경화 공정의 온도를 저온화, 단시간화시킬 수 있다고 생각된다.By using a photobase generator, the adhesiveness (high temperature adhesiveness) and moisture resistance at the high temperature of a photosensitive adhesive agent to a to-be-adhered body can further be improved. The reason for this is that the base generated from the photobase generator effectively acts as a curing catalyst for the epoxy resin, so that the crosslinking density can be further increased, and the resulting curing catalyst rarely corrodes the substrate or the like. . By containing a photobase generator in a photosensitive adhesive agent, a crosslinking density can be improved and the outgas at the time of high temperature standing can be reduced more. Moreover, it is thought that the temperature of a hardening process can be made low temperature and short time.
광염기 발생제는 방사선 조사시에 염기를 발생시키는 화합물이면 특별히 제한은 받지 않고 이용할 수 있다. 발생하는 염기로서는 반응성, 경화 속도의 점에서 강염기성 화합물이 바람직하다.The photobase generator can be used without particular limitation as long as it is a compound that generates a base during irradiation. As a base to generate | occur | produce, a strong basic compound is preferable at the point of reactivity and hardening rate.
이러한 방사선 조사시에 발생하는 염기로서는, 예를 들면 이미다졸, 2,4-디메틸이미다졸 및 1-메틸이미다졸 등의 이미다졸 유도체, 피페라진 및 2,5-디메틸피페라진 등의 피페라진 유도체, 피페리딘 및 1,2-디메틸피페리딘 등의 피페리딘 유도체, 프롤린 유도체, 트리메틸아민, 트리에틸아민 및 트리에탄올아민 등의 트리알킬아민 유도체, 4-메틸아미노피리딘 및 4-디메틸아미노피리딘 등의 4위치에 아미노기 또는 알킬아미노기가 치환된 피리딘 유도체, 피롤리딘 및 n-메틸피롤리딘 등의 피롤리딘 유도체, 디히드로피리딘 유도체, 트리에틸렌디아민 및 1,8-디아자비스시클로(5,4,0)운데센-1(DBU) 등의 지환식 아민 유도체, 및 벤질메틸아민, 벤질디메틸아민 및 벤질디에틸아민 등의 벤질아민 유도체를 들 수 있다.As a base which arises at the time of such irradiation, imidazole derivatives, such as imidazole, 2, 4- dimethyl imidazole, and 1-methyl imidazole, piper, such as piperazine and 2, 5- dimethyl piperazine, for example. Piperidine derivatives such as razine derivatives, piperidine and 1,2-dimethylpiperidine, proline derivatives, trialkylamine derivatives such as trimethylamine, triethylamine and triethanolamine, 4-methylaminopyridine and 4-dimethyl Pyridine derivatives substituted with amino or alkylamino groups at 4 positions such as aminopyridine, pyrrolidine derivatives such as pyrrolidine and n-methylpyrrolidine, dihydropyridine derivatives, triethylenediamine and 1,8-diazabiscyclo Alicyclic amine derivatives such as (5,4,0) undecene-1 (DBU) and benzylamine derivatives such as benzylmethylamine, benzyldimethylamine and benzyldiethylamine.
상기와 같은 염기를 방사선 조사에 의해 발생시키는 광염기 발생제로서는, 예를 들면 문헌 [Journal of Photopolymer Science and Technology 12권, 313 내지 314항(1999년)]이나 문헌 [Chemistry of Materials 11권, 170 내지 176항(1999년)] 등에 기재되어 있는 4급 암모늄염 유도체를 이용할 수 있다. 이들은 활성 광선(방사선)의 조사에 의해 고염기성의 트리알킬아민을 생성하기 때문에 에폭시 수지의 경화에는 최적이다.As a photobase generator which generates such a base by irradiation with radiation, for example, Journal of Photopolymer Science and
광염기 발생제로서는 문헌 [Journal of American Chemical Society 118권 12925쪽(1996년)]이나 문헌 [Polymer Journal 28권 795쪽(1996년)] 등에 기재되어 있는 카르밤산 유도체도 이용할 수 있다.As the photobase generator, carbamic acid derivatives described in Journal of American Chemical Society Vol. 118, pp. 12925 (1996), and Polymer Journal Vol. 28, p. 795 (1996) can also be used.
활성 광선의 조사에 의해 염기를 발생시키는 광염기 발생제로서는 2,4-디메톡시-1,2-디페닐에탄-1-온, 1,2-옥탄디온, 1-[4-(페닐티오)-2-(o-벤조일옥심)]이나 에타논 및 1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]-1-(o-아세틸옥심) 등의 옥심 유도체나 광라디칼 발생제로서 시판되고 있는 2-벤질-2-디메틸아미노-1-(4-모르폴리노페닐)-부타논-1,2,2-디메톡시-1,2-디페닐에탄-1-온, 2-메틸-1-(4-(메틸티오)페닐)-2-모르폴리노프로판-1-온, 2-벤질-2-디메틸아미노-1-(4-모르폴리노페닐)-부타논-1, 헥사아릴비스이미다졸 유도체(할로겐, 알콕시기, 니트로기 및 시아노기 등의 치환기가 페닐기에 치환되어 있을 수도 있음) 및 벤조이소옥사졸론 유도체 등을 이용할 수 있다.Examples of the photobase generator that generates a base by irradiation of active light include 2,4-dimethoxy-1,2-diphenylethan-1-one, 1,2-octanedione, and 1- [4- (phenylthio) -2- (o-benzoyloxime)], ethanone and 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (o-acetyloxime) 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2,2-dimethoxy-1,2-diphenylethane commercially available as an oxime derivative or an optical radical generator -1-one, 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropane-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl ) -Butanone-1, hexaarylbisimidazole derivatives (substituents such as halogen, alkoxy group, nitro group and cyano group may be substituted with phenyl group), benzoisoxazolone derivatives and the like can be used.
광염기 발생제로서는 고분자의 주쇄 및/또는 측쇄에 염기를 발생시키는 기를 도입한 화합물을 이용할 수도 있다. 이 경우의 분자량으로서는 감광성 접착제로서의 접착성, 유동성 및 내열성의 관점에서 중량 평균 분자량 1000 내지 100000이 바람직하고, 5000 내지 30000인 것이 보다 바람직하다.As a photobase generator, the compound which introduce | transduced the group which generate | occur | produces a base in the main chain and / or side chain of a polymer can also be used. As molecular weight in this case, the weight average molecular weights 1000-100000 are preferable from a viewpoint of adhesiveness, fluidity | liquidity, and heat resistance as a photosensitive adhesive agent, and it is more preferable that it is 5000-30000.
상기 광염기 발생제는 노광하지 않은 상태에서는 에폭시 수지와 반응성을 나타내지 않기 때문에, 실온에서의 저장 안정성이 매우 우수하다.Since the photobase generator does not exhibit reactivity with the epoxy resin in the unexposed state, the photobase generator is excellent in storage stability at room temperature.
광중합 개시제의 양은 방사선 중합성 화합물 100질량부에 대하여 5질량부 이상 또는 1질량부 이상일 수도 있다. 광중합 개시제의 양은 방사선 중합성 화합물 100질량부에 대하여 0.1질량부 이하 또는 1질량부 이하일 수도 있다.The quantity of a photoinitiator may be 5 mass parts or more or 1 mass part or more with respect to 100 mass parts of radiation polymeric compounds. The quantity of a photoinitiator may be 0.1 mass part or less or 1 mass part or less with respect to 100 mass parts of radiation polymeric compounds.
본 실시 형태에 관한 감광성 접착제는 필요에 따라 증감제를 병용할 수 있다. 이 증감제로서는, 예를 들면 캄포퀴논, 벤질, 디아세틸, 벤질디메틸케탈, 벤질디에틸케탈, 벤질디(2-메톡시에틸)케탈, 4,4'-디메틸벤질-디메틸케탈, 안트라퀴논, 1-클로로안트라퀴논, 2-클로로안트라퀴논, 1,2-벤즈안트라퀴논, 1-히드록시안트라퀴논, 1-메틸안트라퀴논, 2-에틸안트라퀴논, 1-브로모안트라퀴논, 티오크산톤, 2-이소프로필티오크산톤, 2-니트로티오크산톤, 2-메틸티오크산톤, 2,4-디메틸티오크산톤, 2,4-디에틸티오크산톤, 2,4-디이소프로필티오크산톤, 2-클로로-7-트리플루오로메틸티오크산톤, 티오크산톤-10,10-디옥시드, 티오크산톤-10-옥시드, 벤조인메틸에테르, 벤조인에틸에테르, 이소프로필에테르, 벤조인이소부틸에테르, 벤조페논, 비스(4-디메틸아미노페닐)케톤, 4,4'-비스디에틸아미노벤조페논 및 아지드기를 포함하는 화합물을 들 수 있다. 이들은 1종을 단독으로 또는 2종 이상을 병용하여 사용할 수 있다.The photosensitive adhesive agent concerning this embodiment can use a sensitizer together as needed. Examples of the sensitizer include camphorquinone, benzyl, diacetyl, benzyl dimethyl ketal, benzyl diethyl ketal, benzyl di (2-methoxyethyl) ketal, 4,4'-dimethylbenzyl-dimethyl ketal, anthraquinone, 1-chloroanthraquinone, 2-chloroanthraquinone, 1,2-benzanthraquinone, 1-hydroxyanthraquinone, 1-methylanthraquinone, 2-ethylanthraquinone, 1-bromoanthraquinone, thioxanthone, 2-isopropyl thioxanthone, 2-nitro thioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, 2,4-diethyl thioxanthone, 2,4-diisopropyl thioxide Santone, 2-chloro-7-trifluoromethyl thioxanthone, thioxanthone-10,10-oxide, thioxanthone-10-oxide, benzoin methyl ether, benzoin ethyl ether, isopropyl ether, The compound containing a benzoin isobutyl ether, benzophenone, bis (4-dimethylaminophenyl) ketone, 4,4'-bisdiethylamino benzophenone, and an azide group is mentioned. These can be used individually by 1 type or in combination of 2 or more types.
본 실시 형태에 관한 감광성 접착제에 있어서는 저응력성, 피착체와의 밀착성, 열압착성을 향상시키는 점에서 (D) 열가소성 수지를 함유할 수도 있다. (D) 성분의 유리 전이 온도(Tg)는 150℃ 이하인 것이 바람직하고, 120℃ 이하인 것이 보다 바람직하고, 100℃ 이하인 것이 보다 더 바람직하고, 80℃ 이하인 것이 가장 바람직하다. 이 Tg가 150℃를 초과하는 경우, 감광성 접착제의 점도가 상승하는 경향이 있다. 또한, 피착체에 열압착할 때에 150℃ 이상의 고온을 필요로 하며, 반도체 웨이퍼에 휘어짐이 발생하기 쉬워지는 경향이 있다.In the photosensitive adhesive agent which concerns on this embodiment, it can also contain (D) thermoplastic resin from the point which improves low stress, adhesiveness with a to-be-adhered body, and thermocompression bonding. It is preferable that the glass transition temperature (Tg) of (D) component is 150 degrees C or less, It is more preferable that it is 120 degrees C or less, It is still more preferable that it is 100 degrees C or less, It is most preferable that it is 80 degrees C or less. When this Tg exceeds 150 degreeC, there exists a tendency for the viscosity of a photosensitive adhesive agent to rise. Moreover, when thermocompression bonding with a to-be-adhered body, high temperature of 150 degreeC or more is required, and there exists a tendency for a warpage to arise easily in a semiconductor wafer.
여기서, 「Tg」란 필름화된 (D) 성분의 주 분산 피크 온도를 의미한다. 레오메트릭스사 제조의 점탄성 분석기「RSA-2」(상품명)를 이용하여, 필름 두께 100㎛, 승온 속도 5℃/min, 주파수 1Hz, 측정 온도 -150 내지 300℃의 조건에서 측정하며, 그 때 Tg 부근에서 관측되는 tanδ 피크 온도가 주 분산 피크 온도이다.Here, "Tg" means the main dispersion peak temperature of the filmed (D) component. Using a viscoelastic analyzer "RSA-2" (trade name) manufactured by Leometrics, the film thickness was measured under conditions of 100 µm, a heating rate of 5 ° C / min, a frequency of 1 Hz, and a measurement temperature of -150 to 300 ° C. The tanδ peak temperature observed in the vicinity is the main dispersion peak temperature.
(D) 성분의 중량 평균 분자량은 5000 내지 500000의 범위 내에서 제어되어 있는 것이 바람직하며, 열압착성과 고온 접착성을 고도로 양립할 수 있는 점에서 10000 내지 300000인 것이 보다 바람직하다. 여기서, 「중량 평균 분자량」이란, 시마즈 세이사꾸쇼사 제조의 고속 액체 크로마토그래피 「C-R4A」(상품명)를 이용하여, 폴리스티렌 환산으로 측정하였을 때의 중량 평균 분자량을 의미한다.It is preferable to control the weight average molecular weight of (D) component in the range of 5000-50000, and it is more preferable that it is 10000-30000 in the point which can make highly compatible thermocompression bonding and high temperature adhesiveness. Here, a "weight average molecular weight" means the weight average molecular weight when it measured by polystyrene conversion using high performance liquid chromatography "C-R4A" (brand name) by Shimadzu Corporation.
(D) 성분으로서는 폴리에스테르 수지, 폴리에테르 수지, 폴리이미드 수지, 폴리아미드 수지, 폴리아미드이미드 수지, 폴리에테르이미드 수지, 폴리우레탄 수지, 폴리우레탄이미드 수지, 폴리우레탄아미드이미드 수지, 실록산폴리이미드 수지, 폴리에스테르이미드 수지, 이들의 공중합체, 이들의 전구체(폴리아미드산 등) 외에, 폴리벤조옥사졸 수지, 페녹시 수지, 폴리술폰 수지, 폴리에테르술폰 수지, 폴리페닐렌설파이드 수지, 폴리에스테르 수지, 폴리에테르 수지, 폴리카보네이트 수지, 폴리에테르케톤 수지, 중량 평균 분자량이 1만 내지 100만인 (메트)아크릴 공중합체, 노볼락 수지 및 페놀 수지 등을 들 수 있다. 이들은 1종을 단독으로 또는 2종 이상을 조합하여 이용할 수 있다. 또한, 이들 수지의 주쇄 및/또는 측쇄에 에틸렌글리콜 및 프로필렌글리콜 등의 글리콜기, 카르복실기 및/또는 수산기가 부여된 것일 수도 있다.As the component (D), polyester resin, polyether resin, polyimide resin, polyamide resin, polyamideimide resin, polyetherimide resin, polyurethane resin, polyurethaneimide resin, polyurethaneamideimide resin, siloxane polyimide In addition to resins, polyesterimide resins, copolymers thereof, and precursors thereof (polyamic acid, etc.), polybenzoxazole resins, phenoxy resins, polysulfone resins, polyethersulfone resins, polyphenylene sulfide resins, polyesters Resins, polyether resins, polycarbonate resins, polyether ketone resins, (meth) acrylic copolymers having a weight average molecular weight of 10,000 to 1 million, novolak resins and phenol resins. These may be used singly or in combination of two or more. Furthermore, glycol groups, such as ethylene glycol and propylene glycol, carboxyl group and / or hydroxyl group, may be provided to the principal chain and / or side chain of these resin.
이들 중에서도 고온 접착성, 내열성의 관점에서 (D) 성분은 이미드기를 갖는 수지인 것이 바람직하다. 이미드기를 갖는 수지로서는, 예를 들면 폴리이미드 수지, 폴리아미드이미드 수지, 폴리에테르이미드 수지, 폴리우레탄이미드 수지, 폴리우레탄아미드이미드 수지, 실록산폴리이미드 수지, 폴리에스테르이미드 수지 및 이들의 공중합체를 들 수 있으며, 예를 들면 폴리이미드 수지는 테트라카르복실산 이무수물과 디아민을 공지된 방법으로 축합 반응시켜 얻을 수 있다. 즉, 유기 용매 중에서 테트라카르복실산 이무수물과 디아민을 등몰로, 또는 필요에 따라 테트라카르복실산 이무수물의 합계 1.0mol에 대하여 디아민의 합계를 바람직하게는 0.5 내지 2.0mol, 보다 바람직하게는 0.8 내지 1.0mol의 범위에서 조성비를 조정(각 성분의 첨가 순서는 임의임)하여 반응 온도 80℃ 이하, 바람직하게는 0 내지 60℃에서 부가 반응시킨다. 반응이 진행함에 따라 반응액의 점도가 서서히 상승하여 폴리이미드 수지의 전구체인 폴리아미드산이 생성된다. 또한, 감광성 접착제의 여러가지 특성의 저하를 억제하기 위하여, 상기 테트라카르복실산 이무수물은 무수 아세트산으로 재결정에 의한 정제 처리를 행한 것임이 바람직하다.Among these, it is preferable that (D) component is resin which has an imide group from a high temperature adhesiveness and a heat resistant viewpoint. Examples of the resin having an imide group include polyimide resins, polyamideimide resins, polyetherimide resins, polyurethaneimide resins, polyurethaneamideimide resins, siloxane polyimide resins, polyesterimide resins, and copolymers thereof. For example, a polyimide resin can be obtained by condensation reaction of tetracarboxylic dianhydride and diamine by a well-known method. That is, the sum of the diamines is preferably 0.5 to 2.0 moles, more preferably 0.8 to moles of tetracarboxylic dianhydride and diamine in an organic solvent in equimolar or 1.0 moles of tetracarboxylic dianhydride as necessary. The composition ratio is adjusted in the range of 1.0 mol (addition order of each component is arbitrary) and the addition reaction is carried out at a reaction temperature of 80 ° C or lower, preferably 0 to 60 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually rises to produce polyamic acid, which is a precursor of the polyimide resin. Moreover, in order to suppress the fall of the various characteristics of the photosensitive adhesive agent, it is preferable that the said tetracarboxylic dianhydride performed the refinement | purification process by recrystallization with acetic anhydride.
상기 축합 반응에서의 테트라카르복실산 이무수물과 디아민의 조성비에 대해서는, 테트라카르복실산 이무수물의 합계 1.0mol에 대하여 디아민의 합계가 2.0mol을 초과하면, 얻어지는 폴리이미드 수지에 아민 말단을 갖는 폴리이미드 올리고머의 양이 많아지는 경향이 있다. 또한, 폴리이미드 수지의 중량 평균 분자량이 낮아져 감광성 접착제의 내열성을 포함하는 여러가지 특성이 충분하지 않게 되는 경향이 있다. 한편, 테트라카르복실산 이무수물의 합계 1.0mol에 대하여 디아민의 합계가 0.5mol 미만이면, 산 말단(카르복실 말단)을 갖는 폴리이미드 수지 올리고머의 양이 많아지는 경향이 있다. 또한, 폴리이미드 수지의 중량 평균 분자량이 낮아져 감광성 접착제의 내열성을 포함하는 여러가지 특성이 충분하지 않게 되는 경향이 있다.About the composition ratio of tetracarboxylic dianhydride and diamine in the said condensation reaction, when the sum total of diamine exceeds 2.0 mol with respect to a total of 1.0 mol of tetracarboxylic dianhydride, the polyimide which has an amine terminal in the obtained polyimide resin The amount of oligomer tends to increase. Moreover, the weight average molecular weight of a polyimide resin becomes low, and there exists a tendency for the various characteristics including the heat resistance of a photosensitive adhesive agent to become insufficient. On the other hand, when the sum total of diamine is less than 0.5 mol with respect to 1.0 mol total of tetracarboxylic dianhydride, there exists a tendency for the quantity of the polyimide resin oligomer which has an acid terminal (carboxyl terminal) to increase. Moreover, the weight average molecular weight of a polyimide resin becomes low, and there exists a tendency for the various characteristics including the heat resistance of a photosensitive adhesive agent to become insufficient.
폴리이미드 수지는 상기 반응물(폴리아미드산)을 탈수 폐환시켜 얻을 수 있다. 탈수 폐환은 가열 처리하는 열 폐환법, 탈수제를 사용하는 화학 폐환법 등으로 행할 수 있다.The polyimide resin can be obtained by dehydrating and closing the reaction product (polyamic acid). The dehydration ring closure can be carried out by a thermal ring closure method for heat treatment, a chemical ring closure method using a dehydrating agent, or the like.
폴리이미드 수지의 원료로서 이용되는 테트라카르복실산 이무수물로서는 특별히 제한은 없으며, 예를 들면 피로멜리트산 이무수물, 3,3',4,4'-비페닐테트라카르복실산 이무수물, 2,2',3,3'-비페닐테트라카르복실산 이무수물, 2,2-비스(3,4-디카르복시페닐)프로판 이무수물, 2,2-비스(2,3-디카르복시페닐)프로판 이무수물, 1,1-비스(2,3-디카르복시페닐)에탄 이무수물, 1,1-비스(3,4-디카르복시페닐)에탄 이무수물, 비스(2,3-디카르복시페닐)메탄 이무수물, 비스(3,4-디카르복시페닐)메탄 이무수물, 비스(3,4-디카르복시페닐)술폰 이무수물, 3,4,9,10-페릴렌테트라카르복실산 이무수물, 비스(3,4-디카르복시페닐)에테르 이무수물, 벤젠-1,2,3,4-테트라카르복실산 이무수물, 3,4,3',4'-벤조페논테트라카르복실산 이무수물, 2,3,2',3'-벤조페논테트라카르복실산 이무수물, 3,3,3',4'-벤조페논테트라카르복실산 이무수물, 1,2,5,6-나프탈렌테트라카르복실산 이무수물, 1,4,5,8-나프탈렌테트라카르복실산 이무수물, 2,3,6,7-나프탈렌테트라카르복실산 이무수물, 1,2,4,5-나프탈렌테트라카르복실산 이무수물, 2,6-디클로로나프탈렌-1,4,5,8-테트라카르복실산 이무수물, 2,7-디클로로나프탈렌-1,4,5,8-테트라카르복실산 이무수물, 2,3,6,7-테트라클로로나프탈렌-1,4,5,8-테트라카르복실산 이무수물, 페난트렌-1,8,9,10-테트라카르복실산 이무수물, 피라진-2,3,5,6-테트라카르복실산 이무수물, 티오펜-2,3,5,6-테트라카르복실산 이무수물, 2,3,3',4'-비페닐테트라카르복실산 이무수물, 3,4,3',4'-비페닐테트라카르복실산 이무수물, 2,3,2',3'-비페닐테트라카르복실산 이무수물, 비스(3,4-디카르복시페닐)디메틸실란 이무수물, 비스(3,4-디카르복시페닐)메틸페닐실란 이무수물, 비스(3,4-디카르복시페닐)디페닐실란 이무수물, 1,4-비스(3,4-디카르복시페닐디메틸실릴)벤젠 이무수물, 1,3-비스(3,4-디카르복시페닐)-1,1,3,3-테트라메틸디시클로헥산 이무수물, p-페닐렌비스(트리멜리테이트 무수물), 에틸렌테트라카르복실산 이무수물, 1,2,3,4-부탄테트라카르복실산 이무수물, 데카히드로나프탈렌-1,4,5,8-테트라카르복실산 이무수물, 4,8-디메틸-1,2,3,5,6,7-헥사히드로나프탈렌-1,2,5,6-테트라카르복실산 이무수물, 시클로펜탄-1,2,3,4-테트라카르복실산 이무수물, 피롤리딘-2,3,4,5-테트라카르복실산 이무수물, 1,2,3,4-시클로부탄테트라카르복실산 이무수물, 비스(엑소-비시클로[2,2,1]헵탄-2,3-디카르복실산 이무수물, 비시클로-[2,2,2]-옥트-7-엔-2,3,5,6-테트라카르복실산 이무수물, 2,2-비스(3,4-디카르복시페닐)프로판 이무수물, 2,2-비스[4-(3,4-디카르복시페닐)페닐]프로판 이무수물, 2,2-비스(3,4-디카르복시페닐)헥사플루오로프로판 이무수물, 2,2-비스[4-(3,4-디카르복시페닐)페닐]헥사플루오로프로판 이무수물, 4,4'-비스(3,4-디카르복시페녹시)디페닐술피드 이무수물, 1,4-비스(2-히드록시헥사플루오로이소프로필)벤젠비스(트리멜리트산 무수물), 1,3-비스(2-히드록시헥사플루오로이소프로필)벤젠비스(트리멜리트산 무수물), 5-(2,5-디옥소테트라히드로푸릴)-3-메틸-3-시클로헥센-1,2-디카르복실산 이무수물, 테트라히드로푸란-2,3,4,5-테트라카르복실산 이무수물 및 하기 화학식 (7)로 표시되는 테트라카르복실산 이무수물을 들 수 있다. 하기 화학식 (7) 중 a는 2 내지 20의 정수를 나타낸다.There is no restriction | limiting in particular as tetracarboxylic dianhydride used as a raw material of polyimide resin, For example, pyromellitic dianhydride, 3,3 ', 4,4'-biphenyl tetracarboxylic dianhydride, 2, 2 ', 3,3'-biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane Dianhydrides, 1,1-bis (2,3-dicarboxyphenyl) ethane dianhydrides, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydrides, bis (2,3-dicarboxyphenyl) methane Dianhydrides, bis (3,4-dicarboxyphenyl) methane dianhydrides, bis (3,4-dicarboxyphenyl) sulfone dianhydrides, 3,4,9,10-perylenetetracarboxylic dianhydrides, bis ( 3,4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ', 4'-benzophenonetetracarboxylic dianhydride, 2, 3,2 ', 3'-benzophenonetetracarboxylic dianhydride, 3,3,3', 4'-benzo Nontetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetra Carboxylic acid dianhydride, 1,2,4,5-naphthalene tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene -1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8, 9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3, 3 ', 4'-biphenyltetracarboxylic dianhydride, 3,4,3', 4'-biphenyltetracarboxylic dianhydride, 2,3,2 ', 3'-biphenyltetracarboxylic acid Dianhydrides, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydrides, bis (3,4-dicarboxyphenyl) methylphenylsilane dianhydrides, non (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 1,3-bis (3,4-dicarboxyphenyl)- 1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylenebis (trimelitate anhydride), ethylenetetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride Water, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6 Tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, 1,2,3 , 4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic dianhydride, bicyclo- [2,2,2] -oct -7-ene-2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis [4- (3,4 Dicarboxyphenyl) Nil] propane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis [4- (3,4-dicarboxyphenyl) phenyl] hexafluoropropane Dianhydrides, 4,4'-bis (3,4-dicarboxyphenoxy) diphenylsulfide dianhydrides, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimelitic anhydride) , 1,3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimelitic anhydride), 5- (2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1 And 2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride and tetracarboxylic dianhydride represented by the following general formula (7). In the following general formula (7), a represents an integer of 2 to 20.
상기 화학식 (7)로 표시되는 테트라카르복실산 이무수물은, 예를 들면 무수 트리멜리트산 모노클로라이드 및 대응하는 디올로부터 합성할 수 있다. 구체적으로는 1,2-(에틸렌)비스(트리멜리테이트 무수물), 1,3-(트리메틸렌)비스(트리멜리테이트 무수물), 1,4-(테트라메틸렌)비스(트리멜리테이트 무수물), 1,5-(펜타메틸렌)비스(트리멜리테이트 무수물), 1,6-(헥사메틸렌)비스(트리멜리테이트 무수물), 1,7-(헵타메틸렌)비스(트리멜리테이트 무수물), 1,8-(옥타메틸렌)비스(트리멜리테이트 무수물), 1,9-(노나메틸렌)비스(트리멜리테이트 무수물), 1,10-(데카메틸렌)비스(트리멜리테이트 무수물), 1,12-(도데카메틸렌)비스(트리멜리테이트 무수물), 1,16-(헥사데카메틸렌)비스(트리멜리테이트 무수물) 및 1,18-(옥타데카메틸렌)비스(트리멜리테이트 무수물)을 들 수 있다.The tetracarboxylic dianhydride represented by the above formula (7) can be synthesized, for example, from trimellitic anhydride monochloride and the corresponding diol. Specifically, 1,2- (ethylene) bis (trimelitate anhydride), 1,3- (trimethylene) bis (trimelitate anhydride), 1,4- (tetramethylene) bis (trimelitate anhydride), 1,5- (pentamethylene) bis (trimelitate anhydride), 1,6- (hexamethylene) bis (trimelitate anhydride), 1,7- (heptamethylene) bis (trimelitate anhydride), 1, 8- (octamethylene) bis (trimethate anhydride), 1,9- (nonmethylene) bis (trimelitate anhydride), 1,10- (decamethylene) bis (trimelitate anhydride), 1,12- (Dodecamethylene) bis (trimellitate anhydride), 1,16- (hexadecamethylene) bis (trimelitate anhydride), and 1,18- (octadecamethylene) bis (trimelitate anhydride) are mentioned. .
테트라카르복실산 이무수물로서는 용제에의 양호한 용해성 및 내습성, 파장 365nm의 광에 대한 투명성을 부여하는 관점에서, 하기 식 (8) 또는 (9)로 표시되는 테트라카르복실산 이무수물이 바람직하다.As tetracarboxylic dianhydride, the tetracarboxylic dianhydride represented by following formula (8) or (9) is preferable from a viewpoint of providing favorable solubility and moisture resistance to a solvent, and transparency to the light of wavelength 365nm. .
이상과 같은 테트라카르복실산 이무수물은 1종을 단독으로 또는 2종 이상을 조합하여 사용할 수 있다.Such tetracarboxylic dianhydride can be used individually by 1 type or in combination of 2 or more types.
(D) 성분은 또한 접착 강도를 상승시키는 점에서 카르복실기 및/또는 페놀성 수산기 함유 폴리이미드 수지를 이용할 수 있다. 상기 카르복실기 및/또는 수산기 함유 폴리이미드 수지의 원료로서 이용되는 디아민은, 하기 식 (10), (11), (12) 또는 (13)으로 표시되는 방향족 디아민을 포함하는 것이 바람직하다.(D) component can also use a carboxyl group and / or a phenolic hydroxyl group containing polyimide resin from a point which raises adhesive strength. It is preferable that the diamine used as a raw material of the said carboxyl group and / or the hydroxyl group containing polyimide resin contains aromatic diamine represented by following formula (10), (11), (12) or (13).
상기 폴리이미드 수지의 원료로서 이용되는 그 밖의 디아민으로서는 특별히 제한은 없으며, 예를 들면 o-페닐렌디아민, m-페닐렌디아민, p-페닐렌디아민, 3,3'-디아미노디페닐에테르, 3,4'-디아미노디페닐에테르, 4,4'-디아미노디페닐에테르, 3,3'-디아미노디페닐메탄, 3,4'-디아미노디페닐메탄, 4,4'-디아미노디페닐메탄, 비스(4-아미노-3,5-디메틸페닐)메탄, 비스(4-아미노-3,5-디이소프로필페닐)메탄, 3,3'-디아미노디페닐디플루오로메탄, 3,4'-디아미노디페닐디플루오로메탄, 4,4'-디아미노디페닐디플루오로메탄, 3,3'-디아미노디페닐술폰, 3,4'-디아미노디페닐술폰, 4,4'-디아미노디페닐술폰, 3,3'-디아미노디페닐술피드, 3,4'-디아미노디페닐술피드, 4,4'-디아미노디페닐술피드, 3,3'-디아미노디페닐케톤, 3,4'-디아미노디페닐케톤, 4,4'-디아미노디페닐케톤, 2,2-비스(3-아미노페닐)프로판, 2,2'-(3,4'-디아미노디페닐)프로판, 2,2-비스(4-아미노페닐)프로판, 2,2-비스(3-아미노페닐)헥사플루오로프로판, 2,2-(3,4'-디아미노디페닐)헥사플루오로프로판, 2,2-비스(4-아미노페닐)헥사플루오로프로판, 1,3-비스(3-아미노페녹시)벤젠, 1,4-비스(3-아미노페녹시)벤젠, 1,4-비스(4-아미노페녹시)벤젠, 3,3'-(1,4-페닐렌비스(1-메틸에틸리덴))비스아닐린, 3,4'-(1,4-페닐렌비스(1-메틸에틸리덴))비스아닐린, 4,4'-(1,4-페닐렌비스(1-메틸에틸리덴))비스아닐린, 2,2-비스(4-(3-아미노페녹시)페닐)프로판, 2,2-비스(4-(3-아미노페녹시)페닐)헥사플루오로프로판, 2,2-비스(4-(4-아미노페녹시)페닐)헥사플루오로프로판, 비스(4-(3-아미노에녹시)페닐)술피드, 비스(4-(4-아미노에녹시)페닐)술피드, 비스(4-(3-아미노에녹시)페닐)술폰, 비스(4-(4-아미노에녹시)페닐)술폰, 3,3'-디히드록시-4,4'-디아미노비페닐 및 3,5-디아미노벤조산 등의 방향족 디아민, 1,3-비스(아미노메틸)시클로헥산, 2,2-비스(4-아미노페녹시페닐)프로판, 하기 화학식 (14)로 표시되는 지방족 에테르디아민, 및 하기 화학식 (15)로 표시되는 실록산디아민을 들 수 있다.There is no restriction | limiting in particular as other diamine used as a raw material of the said polyimide resin, For example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'- diamino diphenyl ether, 3,4'-diaminodiphenylether, 4,4'-diaminodiphenylether, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-dia Minodiphenylmethane, bis (4-amino-3,5-dimethylphenyl) methane, bis (4-amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoromethane , 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone , 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfide, 3,4'-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfide, 3, 3'-diaminodiphenylketone, 3,4'-diaminodiphenylketone, 4,4'-diaminodiphenylketone, 2,2-bis (3-ami Nophenyl) propane, 2,2 '-(3,4'-diaminodiphenyl) propane, 2,2-bis (4-aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoro Propane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-aminophenyl) hexafluoropropane, 1,3-bis (3-aminophenoxy) Benzene, 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 '-(1,4-phenylenebis (1-methylethylidene) )) Bisaniline, 3,4 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4'-(1,4-phenylenebis (1-methylethylidene) )) Bisaniline, 2,2-bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2- Bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminoenoxy) phenyl) sulfide, bis (4- (4-aminoenoxy) phenyl) sulfide, Bis (4- (3-aminoenoxy) phenyl) sulfone, bis (4- (4-aminoenoxy) phenyl) sulfone, 3,3'-dihydroxy Aromatic diamines such as -4,4'-diaminobiphenyl and 3,5-diaminobenzoic acid, 1,3-bis (aminomethyl) cyclohexane, 2,2-bis (4-aminophenoxyphenyl) propane, Aliphatic etherdiamine represented by the following general formula (14), and siloxane diamine represented by the following general formula (15) are mentioned.
상기 디아민 중에서도 다른 성분과의 상용성을 부여하는 점에서 하기 화학식 (14)로 표시되는 지방족 에테르디아민이 바람직하고, 에틸렌글리콜 및/또는 프로필렌글리콜계 디아민이 보다 바람직하다. 하기 화학식 (14) 중 R1, R2 및 R3은 각각 독립적으로 탄소수 1 내지 10의 알킬렌기를 나타내고, b는 2 내지 80의 정수를 나타낸다.Among the diamines, aliphatic ether diamines represented by the following general formula (14) are preferable in terms of providing compatibility with other components, and ethylene glycol and / or propylene glycol diamines are more preferable. In formula (14), R 1 , R 2 and R 3 each independently represent an alkylene group having 1 to 10 carbon atoms, and b represents an integer of 2 to 80.
이러한 지방족 에테르디아민으로서, 구체적으로는 선테크노 케미컬(주) 제조의 제파민 D-230, D-400, D-2000, D-4000, ED-600, ED-900, ED-2000, EDR-148, BASF(주) 제조의 폴리에테르아민 D-230, D-400 및 D-2000 등의 폴리옥시알킬렌디아민 등의 지방족 디아민을 들 수 있다. 이들 디아민은 전체 디아민의 20몰% 이상인 것이 바람직하며, (A) 열경화성 수지나 (B) 방사선 중합성 화합물 등의 다른 배합 성분과의 상용성, 또한 열압착성과 고온 접착성을 고도로 양립할 수 있는 점에서 50몰% 이상인 것이 보다 바람직하다.Specific examples of such aliphatic ether diamines include Jeffamine D-230, D-400, D-2000, D-4000, ED-600, ED-900, ED-2000, and EDR-148, manufactured by Sun Techno Chemical. And aliphatic diamines such as polyoxyalkylenediamines such as polyetheramines D-230, D-400, and D-2000 manufactured by BASF Corporation. It is preferable that these diamine is 20 mol% or more of all the diamine, and it is highly compatible with other compounding components, such as (A) thermosetting resin and (B) radiation polymerizable compound, and can be highly compatible with thermocompression bonding and high temperature adhesiveness. It is more preferable that it is 50 mol% or more from a point.
상기 디아민으로서는 실온에서의 밀착성, 접착성을 부여하는 점에서, 하기 화학식 (15)로 표시되는 실록산디아민이 바람직하다. 하기 화학식 (15) 중 R4 및 R9는 각각 독립적으로 탄소수 1 내지 5의 알킬렌기 또는 치환기를 가질 수도 있는 페닐렌기를 나타내고, R5, R6, R7 및 R8은 각각 독립적으로 탄소수 1 내지 5의 알킬기, 페닐기 또는 페녹시기를 나타내고, d는 1 내지 5의 정수를 나타낸다.As said diamine, the siloxane diamine represented by following General formula (15) is preferable at the point which provides adhesiveness and adhesiveness at room temperature. In formula (15), R 4 and R 9 each independently represent an alkylene group having 1 to 5 carbon atoms or a phenylene group which may have a substituent, and R 5 , R 6 , R 7 and R 8 each independently represent 1 carbon. An alkyl group, a phenyl group, or a phenoxy group of 5 is represented, d shows the integer of 1-5.
이들 디아민은 전체 디아민의 0.5 내지 80몰%로 하는 것이 바람직하며, 열압착성과 고온 접착성을 고도로 양립할 수 있는 점에서 1 내지 50몰%로 하는 것이 더욱 바람직하다. 0.5몰%를 하회하면 실록산디아민을 첨가한 효과가 작아지고, 80몰%를 상회하면 다른 성분과의 상용성, 고온 접착성이 저하하는 경향이 있다.It is preferable to make these diamine into 0.5-80 mol% of all diamine, and it is more preferable to set it as 1-50 mol% from the point which can be made highly compatible with thermocompression bonding and high temperature adhesiveness. When it is less than 0.5 mol%, the effect which added siloxane diamine becomes small, and when it exceeds 80 mol%, there exists a tendency for compatibility with other components and high temperature adhesiveness to fall.
상기 화학식 (15)로 표시되는 실록산디아민으로서, 구체적으로는 식 (15) 중의 d가 1인 것으로서 1,1,3,3-테트라메틸-1,3-비스(4-아미노페닐)디실록산, 1,1,3,3-테트라페녹시-1,3-비스(4-아미노에틸)디실록산, 1,1,3,3-테트라페닐-1,3-비스(2-아미노에틸)디실록산, 1,1,3,3-테트라페닐-1,3-비스(3-아미노프로필)디실록산, 1,1,3,3-테트라메틸-1,3-비스(2-아미노에틸)디실록산, 1,1,3,3-테트라메틸-1,3-비스(3-아미노프로필)디실록산, 1,1,3,3-테트라메틸-1,3-비스(3-아미노부틸)디실록산 및 1,3-디메틸-1,3-디메톡시-1,3-비스(4-아미노부틸)디실록산 등을 들 수 있다. 식 (15) 중의 d가 2인 것으로서 1,1,3,3,5,5-헥사메틸-1,5-비스(4-아미노페닐)트리실록산, 1,1,5,5-테트라페닐-3,3-디메틸-1,5-비스(3-아미노프로필)트리실록산, 1,1,5,5-테트라페닐-3,3-디메톡시-1,5-비스(4-아미노부틸)트리실록산, 1,1,5,5-테트라페닐-3,3-디메톡시-1,5-비스(5-아미노펜틸)트리실록산, 1,1,5,5-테트라메틸-3,3-디메톡시-1,5-비스(2-아미노에틸)트리실록산, 1,1,5,5-테트라메틸-3,3-디메톡시-1,5-비스(4-아미노부틸)트리실록산, 1,1,5,5-테트라메틸-3,3-디메톡시-1,5-비스(5-아미노펜틸)트리실록산, 1,1,3,3,5,5-헥사메틸-1,5-비스(3-아미노프로필)트리실록산, 1,1,3,3,5,5-헥사에틸-1,5-비스(3-아미노프로필)트리실록산 및 1,1,3,3,5,5-헥사프로필-1,5-비스(3-아미노프로필)트리실록산 등을 들 수 있다.As siloxane diamine represented by the said General formula (15), 1,1,3,3- tetramethyl- 1, 3-bis (4-aminophenyl) disiloxane as d in Formula (15) is 1 specifically, 1,1,3,3-tetraphenoxy-1,3-bis (4-aminoethyl) disiloxane, 1,1,3,3-tetraphenyl-1,3-bis (2-aminoethyl) disiloxane , 1,1,3,3-tetraphenyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (2-aminoethyl) disiloxane , 1,1,3,3-tetramethyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (3-aminobutyl) disiloxane And 1,3-dimethyl-1,3-dimethoxy-1,3-bis (4-aminobutyl) disiloxane. 1,1,3,3,5,5-hexamethyl-1,5-bis (4-aminophenyl) trisiloxane, and 1,1,5,5-tetraphenyl- as d in Formula (15) is 2 3,3-dimethyl-1,5-bis (3-aminopropyl) trisiloxane, 1,1,5,5-tetraphenyl-3,3-dimethoxy-1,5-bis (4-aminobutyl) tri Siloxane, 1,1,5,5-tetraphenyl-3,3-dimethoxy-1,5-bis (5-aminopentyl) trisiloxane, 1,1,5,5-tetramethyl-3,3-dimeth Oxy-1,5-bis (2-aminoethyl) trisiloxane, 1,1,5,5-tetramethyl-3,3-dimethoxy-1,5-bis (4-aminobutyl) trisiloxane, 1, 1,5,5-tetramethyl-3,3-dimethoxy-1,5-bis (5-aminopentyl) trisiloxane, 1,1,3,3,5,5-hexamethyl-1,5-bis (3-aminopropyl) trisiloxane, 1,1,3,3,5,5-hexaethyl-1,5-bis (3-aminopropyl) trisiloxane and 1,1,3,3,5,5- Hexapropyl-1,5-bis (3-aminopropyl) trisiloxane and the like.
상술한 디아민은 1종을 단독으로 또는 2종 이상을 조합하여 사용할 수 있다.The diamine mentioned above can be used individually by 1 type or in combination of 2 or more types.
상기 폴리이미드 수지는 1종을 단독으로 또는 필요에 따라 2종 이상을 혼합(블렌드)하여 이용할 수 있다.The said polyimide resin can be used individually by 1 type or in mixture (blend) of 2 or more types as needed.
상술한 바와 같이, 폴리이미드 수지의 조성을 결정할 때에는 폴리이미드 수지의 Tg가 150℃ 이하가 되도록 설계하는 것이 바람직하며, 폴리이미드 수지의 원료인 디아민으로서 상기 화학식 (14)로 표시되는 지방족 에테르디아민을 이용하는 것이 특히 바람직하다.As described above, when determining the composition of the polyimide resin, it is preferable to design the Tg of the polyimide resin to be 150 ° C. or lower, and use the aliphatic ether diamine represented by the formula (14) as a diamine as a raw material of the polyimide resin. Is particularly preferred.
상기 폴리이미드 수지의 합성시에, 하기 식 (16), (17) 또는 (18)로 표시되는 화합물과 같은 단관능 산 무수물 및/또는 단관능 아민을 축합 반응액에 투입함으로써, 중합체 말단에 산 무수물 또는 디아민 이외의 관능기를 도입할 수 있다. 또한, 이에 의해 중합체의 분자량을 낮추고, 감광성 접착제의 점도를 저하시켜 열압착성을 향상시킬 수 있다.At the time of the synthesis of the polyimide resin, a monofunctional acid anhydride and / or a monofunctional amine, such as a compound represented by the following formulas (16), (17) or (18), is added to the condensation reaction solution, whereby Functional groups other than anhydride or diamine can be introduced. Moreover, the molecular weight of a polymer can be lowered by this, the viscosity of a photosensitive adhesive agent can be reduced, and thermocompression property can be improved.
이미다졸 등의 에폭시 수지의 경화를 촉진하는 기능을 갖는 관능기를 (D) 성분은 그 주쇄 및/또는 측쇄로서 가질 수도 있다. 예를 들면, 이미다졸 함유의 폴리이미드는 하기와 같이 얻을 수 있다. 상기에 나타낸 디아민 성분으로서, 일부를 하기 구조식으로 표시되는 바와 같은 이미다졸기 함유의 디아민을 이용하여 얻을 수 있다.The functional group (D) component which has a function which accelerates hardening of epoxy resins, such as imidazole, may have as a main chain and / or a side chain. For example, the imidazole containing polyimide can be obtained as follows. As a diamine component shown above, one part can be obtained using the imidazole group containing diamine represented by the following structural formula.
상기 폴리이미드 수지는 균일하게 B 스테이지화할 수 있는 점에서, 두께를 30㎛로 성형하였을 때의 파장 365nm의 광에 대한 투과율이 10% 이상인 것이 바람직하며, 보다 낮은 노광량으로 B 스테이지화할 수 있는 점에서 20% 이상인 것이 보다 바람직하다. 이러한 폴리이미드 수지는, 예를 들면 상기 화학식 (7)로 표시되는 산 무수물과, 상기 화학식 (14)로 표시되는 지방족 에테르디아민 및/또는 상기 화학식 (15)로 표시되는 실록산디아민을 반응시킴으로써 합성할 수 있다.Since the polyimide resin can be uniformly B-stage, it is preferable that the transmittance of light having a wavelength of 365 nm when the thickness is molded to 30 μm is 10% or more, and in that it can be B-stage at a lower exposure dose. It is more preferable that it is 20% or more. Such a polyimide resin can be synthesized by, for example, reacting an acid anhydride represented by the general formula (7) with an aliphatic etherdiamine represented by the general formula (14) and / or a siloxanediamine represented by the general formula (15). Can be.
(D) 열가소성 수지로서는 점도의 상승을 억제하고, 또한 감광성 접착제 중의 용해 잔여를 감소시키는 점에서 상온(25℃)에서 액상인 액상 열가소성 수지를 이용하는 것이 바람직하다. 이러한 열가소성 수지는 용제를 이용하지 않고, 가열하여 반응시키는 것이 가능하여 본 실시 형태와 같은 용제를 적용하지 않는 감광성 접착제에서는 용제 제거의 공정 삭감, 잔존하는 용제의 감소, 재침전 공정의 삭감의 점에서 유용하다. 또한, 액상 열가소성 수지는 반응로로부터의 취출도 용이하다. 이러한 액상 열가소성 수지로서는 특별히 한정은 되지 않지만, 폴리부타디엔, 아크릴로니트릴-부타디엔 올리고머, 폴리이소프렌 및 폴리부텐 등의 고무상 중합체, 폴리올레핀, 아크릴 중합체, 실리콘 중합체, 폴리우레탄, 폴리이미드 및 폴리아미드이미드 등을 들 수 있다. 그 중에서도 폴리이미드 수지가 바람직하게 이용된다.(D) It is preferable to use liquid liquid thermoplastic resin at normal temperature (25 degreeC) from the point which suppresses a raise of a viscosity and reduces the melt | dissolution residual in a photosensitive adhesive agent as (D) thermoplastic resin. Such a thermoplastic resin can be heated and reacted without using a solvent. In the photosensitive adhesive which does not apply the solvent as in the present embodiment, the process of solvent removal, reduction of remaining solvent, and reprecipitation process are reduced. useful. In addition, the liquid thermoplastic resin can be easily taken out from the reaction furnace. Although it does not specifically limit as such a liquid thermoplastic resin, Rubber-like polymers, such as a polybutadiene, an acrylonitrile butadiene oligomer, a polyisoprene and a polybutene, a polyolefin, an acrylic polymer, a silicone polymer, a polyurethane, a polyimide, a polyamideimide, etc. Can be mentioned. Especially, polyimide resin is used preferably.
액상의 폴리이미드 수지로서는, 예를 들면 상기 산 무수물과, 지방족 에테르디아민이나 실록산디아민을 반응시킴으로써 얻어진다. 합성 방법으로서는 용제를 첨가하지 않고, 지방족 에테르디아민이나 실록산디아민 중에 산 무수물을 분산시켜 가열함으로써 얻어진다.As a liquid polyimide resin, it is obtained, for example by making the said acid anhydride react with aliphatic ether diamine and siloxane diamine. As a synthesis | combining method, it is obtained by disperse | distributing and heating an acid anhydride in aliphatic ether diamine and siloxane diamine, without adding a solvent.
본 실시 형태에 관한 감광성 접착제는 고정밀도 평행 노광기(오크 세이사꾸쇼 제조, 「EXM-1172-B-∞」(상품명))를 이용하여 노광한 후, 20℃ 내지 300℃에서의 최저 용융 점도가 30000Paㆍs 이하인 감광성 접착제인 것이 바람직하다. 상기 고정밀도 평행 노광기 대신에 평행 노광기(가부시끼가이샤 루미나스 제조, 「ML-210FM 마스크 얼라이너」(상품명))를 이용할 수도 있다.The photosensitive adhesive agent concerning this embodiment has the minimum melt viscosity in 20 degreeC-300 degreeC, after exposing using a high precision parallel exposure machine (Ok Seisakusho make, "EXM-1172-B-∞" (brand name)). It is preferable that it is a photosensitive adhesive agent which is 30000 Pa * s or less. A parallel exposure machine ("ML-210FM mask aligner" (brand name)) can be used instead of the above-mentioned high precision parallel exposure machine.
본 명세서에 있어서, 「최저 용융 점도」란, 광량 1000mJ/cm2의 광에 의해 노광한 후의 샘플을 점탄성 측정 장치 ARES(레오메트릭스 사이언티픽 FE(주) 제조)를 이용하여 측정하였을 때의 20℃ 내지 300℃에서의 용융 점도의 최저치를 나타낸다. 또한, 측정 플레이트는 직경 8mm의 평행 플레이트를 이용한다. 승온 속도는 5℃/min, 측정 온도는 20℃ 내지 300℃, 주파수는 1Hz의 측정 조건으로 한다.In this specification, "minimum melt viscosity" is 20 degreeC when the sample after exposing with the light amount of 1000mJ / cm <2> was measured using the viscoelasticity measuring apparatus ARES (made by EOMETICS Scientific FE Co., Ltd.). The minimum value of melt viscosity in -300 degreeC is shown. In addition, the measurement plate uses the parallel plate of diameter 8mm. The temperature increase rate is 5 ° C / min, the measurement temperature is 20 ° C to 300 ° C, and the frequency is measured condition of 1 Hz.
상기 최저 용융 점도는 20000Paㆍs 이하인 것이 바람직하고, 18000Paㆍs 이하인 것이 보다 바람직하고, 15000Paㆍs 이하인 것이 보다 더 바람직하다. 상기 범위 내의 최저 용융 점도를 가짐으로써 충분한 저온 열압착성을 확보할 수 있고, 요철이 있는 기판 등에 대해서도 양호한 밀착성을 부여할 수 있다. 상기 최저 용융 점도의 하한치는 특별히 설정하지 않지만, 취급성 등의 점에서 10Paㆍs 이상인 것이 바람직하다.It is preferable that the said minimum melt viscosity is 20000 Pa * s or less, It is more preferable that it is 18000 Pa * s or less, It is still more preferable that it is 15000 Pa * s or less. By having the minimum melt viscosity in the said range, sufficient low temperature thermocompression property can be ensured and favorable adhesiveness can also be provided also to the board | substrate with an unevenness | corrugation. Although the minimum of the said minimum melt viscosity does not set in particular, It is preferable that it is 10 Pa * s or more from a viewpoint of handleability.
본 실시 형태에 관한 감광성 접착제는 필요에 따라 열라디칼 발생제를 이용할 수 있다. 열라디칼 발생제로서는 유기 과산화물인 것이 바람직하다. 유기 과산화물로서는 1분간 반감기 온도가 80℃ 이상인 것이 바람직하고, 100℃ 이상인 것이 보다 바람직하고, 120℃ 이상인 것이 가장 바람직하다. 유기 과산화물은 감광성 접착제의 제조 조건, 제막 온도, 경화(접합) 조건, 그 밖의 공정 조건, 저장 안정성 등을 고려하여 선택된다. 사용 가능한 유기 과산화물로서는 특별히 한정은 되지 않지만, 예를 들면 2,5-디메틸-2,5-디(t-부틸퍼옥시헥산), 디쿠밀퍼옥시드, t-부틸퍼옥시-2-에틸헥사네이트, t-헥실퍼옥시-2-에틸헥사네이트, 1,1-비스(t-부틸퍼옥시)-3,3,5-트리메틸시클로헥산, 1,1-비스(t-헥실퍼옥시)-3,3,5-트리메틸시클로헥산 및 비스(4-t-부틸시클로헥실)퍼옥시디카보네이트를 들 수 있으며, 이들 중 1종을 단독으로 또는 2종 이상을 혼합하여 이용할 수 있다. 유기 과산화물을 포함함으로써 노광 후에 잔존하고 있는 미반응의 방사선 중합성 화합물을 반응시킬 수 있고, 아웃 가스의 감소(저아웃 가스화), 고접착화를 도모할 수 있다.The thermal radical generating agent can be used for the photosensitive adhesive agent concerning this embodiment as needed. It is preferable that it is an organic peroxide as a thermal radical generating agent. The organic peroxide preferably has a half-life temperature of 80 ° C or higher for one minute, more preferably 100 ° C or higher, and most preferably 120 ° C or higher. The organic peroxide is selected in consideration of the production conditions of the photosensitive adhesive, film forming temperature, curing (bonding) conditions, other processing conditions, storage stability, and the like. Although it does not specifically limit as an organic peroxide which can be used, For example, 2, 5- dimethyl- 2, 5- di (t-butyl peroxy hexane), dicumyl peroxide, t-butyl peroxy-2-ethyl hexanate , t-hexyl peroxy-2-ethylhexanate, 1,1-bis (t-butylperoxy) -3,3,5-trimethylcyclohexane, 1,1-bis (t-hexylperoxy) -3 And 3,5-trimethylcyclohexane and bis (4-t-butylcyclohexyl) peroxydicarbonate. One of these may be used alone or in combination of two or more thereof. By containing an organic peroxide, the unreacted radiation polymerizable compound remaining after exposure can be made to react, and the reduction of outgas (low out gasification) and high adhesion can be attained.
열라디칼 발생제의 양은 방사선 중합성 화합물의 전량에 대하여 0.01 내지 20질량%가 바람직하고, 0.1 내지 10질량%가 더욱 바람직하고, 0.5 내지 5질량%가 가장 바람직하다. 0.01질량% 미만이면 경화성이 저하되고 첨가에 의한 효과가 작아지며, 5질량%를 초과하면 아웃 가스량의 증가, 보존 안정성의 저하가 보여지는 경향이 있다.0.01-20 mass% is preferable with respect to the whole quantity of a radiation polymerizable compound, 0.1-10 mass% is more preferable, and, as for the quantity of a thermal radical generating agent, 0.5-5 mass% is the most preferable. When it is less than 0.01 mass%, sclerosis | hardenability falls and the effect by addition becomes small, and when it exceeds 5 mass%, there exists a tendency which the increase of outgas amount and the fall of storage stability are seen.
열라디칼 발생제로서는 1분간 반감기 온도가 80℃ 이상인 화합물이면 특별히 한정은 되지 않지만, 예를 들면 퍼헥사 25B(니찌유사 제조), 2,5-디메틸-2,5-디(t-부틸퍼옥시헥산)(1분간 반감기 온도: 180℃), 퍼쿠밀 D(니찌유사 제조) 및 디쿠밀퍼옥시드(1분간 반감기 온도: 175℃)를 들 수 있다.The thermal radical generator is not particularly limited as long as it has a compound having a half-life temperature of 80 ° C. or higher for 1 minute. Hexane) (1 minute half-life temperature: 180 ° C), Percumyl D (manufactured by Nichiyu Co., Ltd.), and dicumylperoxide (1 minute half-life temperature: 175 ° C).
본 실시 형태에 관한 감광성 접착제에는 보존 안정성, 공정 적응성 또는 산화 방지성을 부여하기 위하여 퀴논류, 다가 페놀류, 페놀류, 포스파이트류 및 황류 등의 중합 금지제 또는 산화 방지제를 감광성 접착제의 경화성을 손상시키지 않는 범위에서 더 첨가할 수도 있다.In the photosensitive adhesive according to the present embodiment, polymerization inhibitors or antioxidants such as quinones, polyhydric phenols, phenols, phosphites and sulfurs are not impaired in the curability of the photosensitive adhesive agent in order to impart storage stability, process adaptability or antioxidant properties. You may add more in the range which does not.
또한, 본 실시 형태에 관한 감광성 접착제에는 적절하게 충전재를 함유시킬 수도 있다. 충전재로서는, 예를 들면 은분, 금분, 구리분 및 니켈분 등의 금속 충전재, 알루미나, 수산화알루미늄, 수산화마그네슘, 탄산칼슘, 탄산마그네슘, 규산칼슘, 규산마그네슘, 산화칼슘, 산화마그네슘, 산화알루미늄, 질화알루미늄, 결정성 실리카, 비정질성 실리카, 질화붕소, 티타니아, 유리, 산화철 및 세라믹 등의 무기 충전재, 및 카본 및 고무계 충전재 등의 유기 충전재를 들 수 있으며, 종류 및 형상 등에 상관없이 특별히 제한없이 사용할 수 있다.In addition, the photosensitive adhesive agent concerning this embodiment can also be made to contain a filler suitably. Examples of the filler include metal fillers such as silver powder, gold powder, copper powder and nickel powder, alumina, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, and nitriding. Inorganic fillers such as aluminum, crystalline silica, amorphous silica, boron nitride, titania, glass, iron oxide and ceramics, and organic fillers such as carbon and rubber fillers, and can be used without particular limitation. have.
상기 충전재는 원하는 기능에 따라 구별지어 사용할 수 있다. 예를 들면, 금속 충전재는 감광성 접착제에 도전성, 열전도성 및 틱소트로피성 등을 부여하는 목적에서 첨가된다. 비금속의 무기 충전재는 감광성 접착제층에 열전도성, 저열팽창성 및 저흡습성 등을 부여하는 목적에서 첨가되며, 유기 충전재는 감광성 접착제층에 인성 등을 부여하는 목적에서 첨가된다.The filler can be used separately according to the desired function. For example, metal fillers are added for the purpose of imparting conductivity, thermal conductivity, thixotropy and the like to the photosensitive adhesive. The nonmetallic inorganic filler is added for the purpose of imparting thermal conductivity, low thermal expansion and low hygroscopicity to the photosensitive adhesive layer, and the organic filler is added for the purpose of imparting toughness and the like to the photosensitive adhesive layer.
이들 금속 충전재, 무기 충전재 또는 유기 충전재는 1종을 단독으로 또는 2종 이상을 조합하여 사용할 수 있다. 그 중에서도 반도체 장치용 접착 재료에 요구되는 도전성, 열전도성 또는 저흡습 특성을 부여할 수 있는 점에서 금속 충전재 또는 무기 충전재가 바람직하며, 절연성을 부여할 수 있는 점에서 절연성의 충전재가 바람직하다. 무기 충전재 또는 절연성의 충전재 중에서는 감광성 접착제에 대한 분산성이 양호하며, 열시의 높은 접착력을 부여할 수 있는 점에서 실리카 충전재가 보다 바람직하다.These metal fillers, inorganic fillers or organic fillers can be used individually by 1 type or in combination of 2 or more types. Especially, a metal filler or an inorganic filler is preferable at the point which can provide the electroconductivity, thermal conductivity, or low moisture absorption characteristic required for the adhesive material for semiconductor devices, and an insulating filler is preferable at the point which can provide insulation. Among the inorganic fillers or the insulating fillers, silica fillers are more preferable in terms of good dispersibility to the photosensitive adhesive and imparting high adhesion at the time of heat.
상기 충전재는 평균 입경이 10㎛ 이하이며 최대 입경이 30㎛ 이하인 것이 바람직하고, 평균 입경이 5㎛ 이하이며 최대 입경이 20㎛ 이하인 것이 보다 바람직하다. 평균 입경이 10㎛를 초과하며 최대 입경이 30㎛를 초과하면, 파괴 인성의 향상 효과가 충분히 얻어지지 않는 경향이 있다. 평균 입경 및 최대 입경의 하한은 특별히 제한은 없지만, 통상 모두 0.001㎛ 이상이다.It is preferable that the said filler has an average particle diameter of 10 micrometers or less and a maximum particle diameter of 30 micrometers or less, It is more preferable that an average particle diameter is 5 micrometers or less and a maximum particle diameter is 20 micrometers or less. If the average particle diameter exceeds 10 µm and the maximum particle diameter exceeds 30 µm, there is a tendency that the effect of improving fracture toughness is not sufficiently obtained. The lower limit of the average particle size and the maximum particle size is not particularly limited, but is usually 0.001 µm or more.
상기 충전재의 양은 부여하는 특성 또는 기능에 따라 결정되지만, 수지 성분((A) 성분 등)과 충전재의 합계에 대하여 0 내지 50질량%가 바람직하고, 1 내지 40질량%가 보다 바람직하고, 3 내지 30질량%가 더욱 바람직하다. 충전재를 증량시킴으로써 저알파화, 저흡습화, 고탄성률화가 도모되고, 다이싱성(다이서 날에 의한 절단성), 와이어 본딩성(초음파 효율), 열시의 접착 강도를 유효하게 향상시킬 수 있다.Although the quantity of the said filler is determined by the characteristic or function to provide, 0-50 mass% is preferable with respect to the sum total of a resin component ((A) component etc.) and a filler, 1-40 mass% is more preferable, 30 mass% is more preferable. By increasing the filler, low alpha, low moisture absorption, high elastic modulus can be achieved, and dicing property (cutting property by dicer blades), wire bonding property (ultrasound efficiency), and adhesive strength at heat can be effectively improved.
충전재를 필요 이상으로 증량시키면, 감광성 접착제의 점도가 상승하거나 감광성 접착제의 열압착성이 손상되는 경향이 있기 때문에, 충전재의 양은 상기 범위 내에 두는 것이 바람직하다. 요구되는 특성의 균형을 취하기 위하여 최적의 충전재의 양을 결정한다. 충전재를 이용한 경우의 혼합 및 혼련은 통상의 교반기, 분쇄기, 삼축 롤 및 볼 밀 등의 분산기를 적절하게 조합하여 행할 수 있다.If the filler is increased more than necessary, the viscosity of the photosensitive adhesive tends to increase or the thermocompression property of the photosensitive adhesive tends to be impaired. Therefore, the amount of the filler is preferably within the above range. The optimum amount of filler is determined to balance the required properties. Mixing and kneading | mixing in the case of using a filler can be performed combining suitably dispersers, such as a normal stirrer, a grinder, a triaxial roll, and a ball mill, suitably.
본 실시 형태에 관한 감광성 접착제에는 이종 재료 사이의 계면 결합을 좋게 하기 위하여 각종 커플링제를 첨가할 수도 있다. 커플링제로서는, 예를 들면 실란계 커플링제, 티탄계 커플링제 및 알루미늄계 커플링제를 들 수 있다. 그 중에서도 효과가 높은 점에서 실란계 커플링제가 바람직하며, 에폭시기 등의 열경화성의 관능기나 메타크릴레이트 및/또는 아크릴레이트 등의 방사선 중합성의 관능기를 갖는 화합물이 보다 바람직하다. 상기 실란계 커플링제의 비점 및/또는 분해 온도는 150℃ 이상인 것이 바람직하고, 180℃ 이상인 것이 보다 바람직하고, 200℃ 이상인 것이 보다 더 바람직하다. 즉, 200℃ 이상의 비점 및/또는 분해 온도이며, 에폭시기 등의 열경화성 관능기나 메타크릴레이트 및/또는 아크릴레이트 등의 방사선 중합성의 관능기를 갖는 실란계 커플링제가 가장 바람직하게 이용된다. 상기 커플링제의 양은, 그 효과나 내열성 및 비용의 면에서 사용하는 감광성 접착제 100질량부에 대하여 0.01 내지 20질량부로 하는 것이 바람직하다.Various coupling agents can also be added to the photosensitive adhesive agent which concerns on this embodiment in order to improve the interfacial bond between different materials. As a coupling agent, a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent are mentioned, for example. Especially, a silane coupling agent is preferable at the point which has a high effect, and the compound which has thermosetting functional groups, such as an epoxy group, and radiation polymerizable functional groups, such as methacrylate and / or acrylate, is more preferable. It is preferable that the boiling point and / or decomposition temperature of the said silane coupling agent are 150 degreeC or more, It is more preferable that it is 180 degreeC or more, It is still more preferable that it is 200 degreeC or more. That is, the silane coupling agent which has a boiling point and / or decomposition temperature of 200 degreeC or more, and has a thermosetting functional group, such as an epoxy group, and a radiation polymerizable functional group, such as methacrylate and / or acrylate, is the most preferable. It is preferable that the quantity of the said coupling agent shall be 0.01-20 mass parts with respect to 100 mass parts of photosensitive adhesive agents used from the surface of the effect, heat resistance, and cost.
본 실시 형태에 관한 감광성 접착제에는 이온성 불순물을 흡착하여 흡습시의 절연 신뢰성을 좋게 하기 위하여, 이온 포착제를 더 첨가할 수도 있다. 이러한 이온 포착제로서는 특별히 제한은 없으며, 예를 들면 트리아진티올 화합물, 페놀계 환원제 등의 구리가 이온화하여 용출하는 것을 방지하기 위한 동해 방지제로서 알려져 있는 화합물, 분말상의 비스무스계, 안티몬계, 마그네슘계, 알루미늄계, 지르코늄계, 칼슘계, 티탄계, 주석계 및 이들 혼합계 등의 무기 화합물을 들 수 있다. 구체예로서는 특별히 한정은 되지 않지만, 도아 고세이(주) 제조의 무기 이온 포착제, 상품명 IXE-300(안티몬계), IXE-500(비스무스계), IXE-600(안티몬, 비스무스 혼합계), IXE-700(마그네슘, 알루미늄 혼합계), IXE-800(지르코늄계), IXE-1100(칼슘계) 등이 있다. 이들은 1종을 단독으로 또는 2종 이상을 혼합하여 이용할 수 있다. 상기 이온 포착제의 양은 첨가에 의한 효과나 내열성, 비용 등의 점에서 감광성 접착제 100질량부에 대하여 0.01 내지 10질량부가 바람직하다.An ion trapping agent may be further added to the photosensitive adhesive agent of this embodiment in order to adsorb | suck an ionic impurity and to improve insulation reliability at the time of moisture absorption. There is no restriction | limiting in particular as such an ion trapping agent, For example, the compound known as an anti-inflammatory agent for preventing copper from ionizing and eluting, such as a triazine thiol compound and a phenolic reducing agent, a powdery bismuth type, an antimony type, magnesium type And inorganic compounds such as aluminum, zirconium, calcium, titanium, tin and mixtures thereof. Although it does not specifically limit as a specific example, Toagosei Co., Ltd. inorganic ion trapping agent, brand names IXE-300 (antimony system), IXE-500 (bismuth system), IXE-600 (antimony, bismuth mixed system), IXE- 700 (magnesium, aluminum mixed system), IXE-800 (zirconium system), IXE-1100 (calcium system), and the like. These can be used individually by 1 type or in mixture of 2 or more types. As for the quantity of the said ion trapping agent, 0.01-10 mass parts is preferable with respect to 100 mass parts of photosensitive adhesive agents from an effect, heat resistance, cost, etc. by addition.
인쇄 전에 메쉬 인쇄판의 개구부에 감광성 접착제를 공급할 때에 안정적으로 공급한다고 하는 관점에서, 인쇄시의 메쉬 개구부로부터의 감광성 접착제의 누락의 관점에서, 및 인쇄 후에 감광성 접착제층의 기포나 메쉬의 흔적을 상기 감광성 접착제가 자발적으로 유동함으로써 평탄화시키는 관점에서, 감광성 접착제의 틱소트로피 지수는 1.0 내지 3.0인 것이 바람직하다. 상기 틱소트로피 지수가 1.0 이상이면, 인쇄법에 의해 공급 및 도포된 상기 감광성 접착제에서의 늘어짐 등의 발생을 억제하여 인쇄 형상을 양호하게 유지할 수 있는 경향이 있다. 또한, 이 틱소트로피 지수가 3.0 이하이면, 인쇄법에 의해 공급 및 도포된 상기 감광성 접착제에서의 「결여」나 긁힘 등의 발생을 억제할 수 있는 경향이 있다. 감광성 접착제의 틱소트로피 지수의 상한치 및 하한치는 1.0, 1.2, 1.3 또는 3.0일 수도 있다.From the point of view of stably supplying the photosensitive adhesive to the opening of the mesh printing plate before printing, in view of the omission of the photosensitive adhesive from the mesh opening at printing, and the printing of the bubbles and the trace of the mesh of the photosensitive adhesive layer after printing From the viewpoint of flattening by spontaneously flowing the adhesive, the thixotropy index of the photosensitive adhesive is preferably 1.0 to 3.0. When the thixotropy index is 1.0 or more, it tends to be able to suppress the occurrence of sagging in the photosensitive adhesive supplied and applied by the printing method and to maintain a good print shape. Moreover, when this thixotropy index is 3.0 or less, there exists a tendency which can suppress generation | occurrence | production of the "lack", a scratch, etc. in the said photosensitive adhesive agent supplied and apply | coated by the printing method. The upper and lower limits of the thixotropic index of the photosensitive adhesive may be 1.0, 1.2, 1.3 or 3.0.
감광성 접착제의 25℃에서의 점도는, 작업시에 감광성 접착제를 인쇄판 상에 공급하는 등의 감광성 접착제의 취급의 관점에서, 인쇄시의 메쉬 개구부로부터의 감광성 접착제의 누락의 관점에서, 및 인쇄 후에 감광성 접착제층의 기포나 메쉬의 흔적을 감광성 접착제가 자발적으로 유동함으로써 평탄화시키는 관점에서 1 내지 100Paㆍs인 것이 바람직하다. 감광성 접착제의 25℃에서의 점도의 상한치 및 하한치는 1Paㆍs, 8.5Paㆍs, 12.8Paㆍs, 16.0Paㆍs 또는 100Paㆍs일 수도 있다.The viscosity at 25 ° C. of the photosensitive adhesive is in terms of handling the photosensitive adhesive such as supplying the photosensitive adhesive on the printing plate at the time of operation, in view of the omission of the photosensitive adhesive from the mesh opening at printing, and the photosensitive after printing. It is preferable that it is 1-100 Pa.s from a viewpoint of planarizing the bubble of the adhesive bond layer, or the trace of a mesh by the spontaneous flow of the photosensitive adhesive agent. The upper limit and the lower limit of the viscosity at 25 ° C. of the photosensitive adhesive agent may be 1 Pa.s, 8.5 Pa.s, 12.8 Pa.s, 16.0 Pa.s or 100 Pa.s.
상기 점도는 E형 회전 점도계(도꾜 게이끼 제조)를 이용하여 3°콘, 25℃, 회전수 0.5rpm의 조건에서 측정하였을 때의 값으로 한다. 틱소트로피 지수는 E형 회전 점도계로 25℃, 회전수 1rpm의 조건에서 측정하였을 때의 값과, 25℃, 회전수 10rpm의 조건에서 측정하였을 때의 값의 비로 정의한다(틱소트로피 지수=(1rpm에서의 점도)/(10rpm에서의 점도)).The said viscosity is made into the value when it measures on the conditions of 3 degrees cone, 25 degreeC, and 0.5 rpm of rotation using the E-type rotational viscometer (made by Tokyo Keiki). The thixotropy index is defined as the ratio of the value measured under conditions of 25 ° C. and 1 rpm with an E-type rotational viscometer and the value measured under conditions of 25 ° C. and 10 rpm (the thixotropy index = (1 rpm). Viscosity at) / (viscosity at 10 rpm)).
<실시예><Examples>
이하, 실시예를 들어 본 발명에 대하여 보다 구체적으로 설명한다. 단, 본 발명은 이하의 실시예에 의해 한정되는 것이 아니다.Hereinafter, the present invention will be described in more detail by way of examples. However, this invention is not limited by the following example.
(감광성 접착제의 제조)(Production of Photosensitive Adhesive)
우선 열경화성 수지와 방사선 중합성 화합물을 유욕에 설치한 4구 세퍼러블 플라스크에 질소 분위기하에서 60℃로 가열하면서 교반하여 용해시켰다. 얻어진 용액에 각각 열경화 개시제와 광중합 개시제를 첨가하고, 분쇄기에 넣어, 혼련한 후, 5Torr 이하에서 1시간 더 탈포 혼련을 행하였다. 이어서, 방사선 중합성 화합물의 첨가와 탈포 혼련을 행함으로써 점도를 조정하고, 각 성분이 표 1에 나타내는 비율의 감광성 접착제를 얻었다. 각 감광성 접착제의 25℃에서의 점도 및 틱소트로피 지수는 표 1에 나타낸 바와 같다.First, the thermosetting resin and the radiation polymerizable compound were dissolved in a four-neck separable flask provided in an oil bath by heating to 60 ° C. under a nitrogen atmosphere. The thermosetting initiator and the photoinitiator were respectively added to the obtained solution, put into a grinder, and kneaded, and the degassing kneading was further performed for 1 hour at 5 Torr or less. Subsequently, the viscosity was adjusted by adding the radiation polymerizable compound and degassing kneading, and the photosensitive adhesive agent of the ratio which each component shows in Table 1 was obtained. The viscosity and thixotropy index in 25 degreeC of each photosensitive adhesive agent are as shown in Table 1.
(감광성 접착제층의 형성)(Formation of Photosensitive Adhesive Layer)
얻어진 감광성 접착제를 V-screen V160 메쉬 인쇄판(가부시끼가이샤 NBC 메쉬테크사 제조)을 설치한 MK-838SV 인쇄기(미나미 가부시끼가이샤 제조)를 이용하여, 크기 8인치φ, 두께 50㎛의 실리콘 웨이퍼의 이면 상에 6인치φ의 원형상으로 인쇄 도포를 행하였다. 인쇄 후의 감광성 접착제의 모습을 육안으로 확인하였더니, 긁힘 등이 없고 균일한 감광성 접착제층을 형성할 수 있었다.Using the MK-838SV printing machine (manufactured by Minami Corporation) with a V-screen V160 mesh printing plate (manufactured by NBC Mesh Tech Co., Ltd.), the obtained photosensitive adhesive was fabricated in a silicon wafer having a size of 8 inches φ and a thickness of 50 µm. Printing application | coating was performed in the circular shape of 6 inch (phi) on the back surface. When the state of the photosensitive adhesive agent after printing was visually confirmed, it was possible to form a uniform photosensitive adhesive layer without a scratch etc.
(B 스테이지화 후의 감광성 접착제층의 표면의 태크력 측정)(Tack force measurement of the surface of the photosensitive adhesive bond layer after B-stage)
실시예 1 내지 4로서 스크린 인쇄법에 의해 실리콘 웨이퍼 상에 형성된 감광성 접착제층에, 평행 노광기(가부시끼가이샤 루미나스 제조, 「ML-210FM 마스크 얼라이너」(상품명))를 이용하여, 질소 분위기하에 1000mJ/cm2로 노광을 행하여 감광성 접착제층을 B 스테이지화하였다. 이어서, 비교예 1로서 실시예 1과 동일한 감광성 접착제를 인쇄한 실리콘 웨이퍼를 준비하고, 100℃의 건조기에 1시간 투입하여 가열에 의한 B 스테이지화를 행하였다. B 스테이지화 후, 레스카사 제조의 프로브 태킹 시험기를 이용하여, 프로브 직경 5.1mm, 박리 속도 10mm/s, 접촉 하중 100gf/cm2, 접촉 시간 1s의 조건에서 30℃에서의 감광성 접착제층의 표면 태크력을 측정하였다. B 스테이지화 후의 표면 태크력은 표 1에 나타낸 바와 같다.1000 mJ under a nitrogen atmosphere using a parallel exposure machine ("ML-210FM Mask Aligner" (brand name)) manufactured on the photosensitive adhesive bond layer formed on the silicon wafer by the screen printing method as Examples 1-4. It exposed at / cm <2> and made the photosensitive adhesive bond layer B-stage. Next, as a comparative example 1, the silicon wafer which printed the photosensitive adhesive agent similar to Example 1 was prepared, it put in the drier at 100 degreeC for 1 hour, and B stage formation by heating was performed. After B staged, the surface tag of the photosensitive adhesive bond layer at 30 degreeC was carried out on condition of probe diameter 5.1mm, peeling speed 10mm / s, contact load 100gf / cm <2> , contact time 1s using the probe tagging tester by Resca company. Force was measured. The surface tag force after B stage formation is as showing in Table 1.
(B 스테이지화 후의 실리콘 웨이퍼의 휘어짐의 관찰)(Observation of Warp of Silicon Wafer After B-Stage)
상기 「B 스테이지화 후의 감광성 접착제층의 표면의 태크력 측정」에서 얻어진 B 스테이지화 후의 실리콘 웨이퍼를 관찰한 결과, 실시예 1 내지 4에서 얻어진 감광성 접착제층이 형성된 실리콘 웨이퍼에는 휘어짐이 보이지 않았다. 그러나, 비교예 1에서 얻어진 감광성 접착제층이 형성된 실리콘 웨이퍼에서는 가열에 따른 실리콘 웨이퍼의 휘어짐이 보여지고, 실리콘 웨이퍼의 단부와 중앙부의 고저차는 1.5cm 정도이었다. B 스테이지화 후의 실리콘 웨이퍼의 휘어짐의 관찰 결과는 표 1에 나타낸 바와 같다.As a result of observing the silicon wafer after B-stage obtained by the said "Measurement of tack force of the surface of the photosensitive adhesive bond layer after B-stage formation", the silicon wafer in which the photosensitive adhesive bond layer obtained in Examples 1-4 was formed was not seen to bend. However, in the silicon wafer in which the photosensitive adhesive bond layer formed in the comparative example 1 was formed, the bending of the silicon wafer with the heating was seen, and the height difference of the edge part and center part of the silicon wafer was about 1.5 cm. The observation result of the bending of the silicon wafer after B stage formation is as Table 1 showing.
(픽업성)(Pick up)
스크린 인쇄법에 의해 감광성 접착제층이 형성된 실리콘 웨이퍼의 실리콘 웨이퍼측에 다이싱 테이프를 라미네이트하여 웨이퍼 링에 설치한 후, 다이싱 장치(가부시끼가이샤 디스코 제조, 「DAD-3220」(상품명))를 이용하여 10×10mm 각(角)으로 다이싱을 행하였다. 실시예 1 내지 4에 있어서, 다이싱 후의 실리콘 웨이퍼의 모습을 확인하였더니, 실리콘 칩이 결여되지 않고 다이싱이 가능하였다. 또한, 다이싱 테이프로부터 실리콘 칩을 10개 픽업하였더니, 다이싱 테이프에의 감광성 접착제의 전사는 없고 픽업성도 양호하였다. 한편, 비교예 1에서는 B 스테이지화 후의 감광성 접착제층의 태크력이 지나치게 강하여 다이싱을 행할 수 없었다.After laminating a dicing tape on the silicon wafer side of the silicon wafer on which the photosensitive adhesive bond layer was formed by the screen printing method, and attaching it to the wafer ring, a dicing apparatus (DAD-3220 (brand name) manufactured by Disco Co., Ltd.) was used. Dicing was carried out using a 10 × 10 mm angle. In Examples 1 to 4, when the state of the silicon wafer after dicing was confirmed, dicing was possible without the lack of a silicon chip. Moreover, when 10 silicon chips were picked up from the dicing tape, there was no transfer of the photosensitive adhesive agent to the dicing tape, and pick-up property was also favorable. On the other hand, in the comparative example 1, the tagging force of the photosensitive adhesive bond layer after B-stage was too strong, and dicing could not be performed.
(전단 강도 측정)(Shear strength measurement)
상기와 마찬가지로 하여 얻어진 접착제층 부착 실리콘 칩(5×5mm 각)을 별도 준비한 실리콘 칩(8×8mm 각) 상에 열압착(200gf, 120℃, 3초)하여 오븐에서 180℃, 1시간 가열 경화를 행하였다. 얻어진 샘플을 자동 접착력 시험기(가부시끼가이샤 아크텍 제조, 「DAGE SERIES4000」(상품명))를 이용하여, 250℃에서의 전단 강도를 측정하였다. 측정 결과는 표 1에 나타낸 바와 같다.A silicon chip with an adhesive layer (5 × 5 mm each) obtained in the same manner as described above was thermocompression-bonded (200 gf, 120 ° C., 3 seconds) on a separately prepared silicon chip (8 × 8 mm each), and then cured by heating in an oven at 180 ° C. for 1 hour. Was performed. The shear strength in 250 degreeC was measured for the obtained sample using the automatic adhesion tester (the "DAGE SERIES4000" (brand name) by Aktec Co., Ltd.). The measurement results are as shown in Table 1.
표 1 중의 각각의 기호는 하기의 의미이다.Each symbol in Table 1 has the following meaning.
YDCN700-7: 도또 가세이(주), 크레졸노볼락형 에폭시 수지Ydcn700-7: Toto Kasei Co., Ltd., cresol novolak type epoxy resin
YDF-8170C: 도또 가세이(주), 비스페놀 F형 에폭시 수지YDF-8170C: Toto Kasei Co., Ltd., bisphenol F type epoxy resin
EP1032H60: JER(주), 트리스(히드록시페닐)메탄형 고형 에폭시 수지EP1032H60: JER Corporation, Tris (hydroxyphenyl) methane type solid epoxy resin
알로닉스 M-140: 도아 고세이(주), N-아크릴로일옥시에틸헥사히드로프탈이미드Alonix M-140: Toagosei Co., Ltd., N-acryloyloxyethyl hexahydrophthalimide
FA-220M: 히따찌 가세이 고교(주), 폴리에틸렌글리콜#200 디메타크릴레이트Fa-220m: hitachi kasei high school, polyethylene glycol # 200 dimethacrylate
I-819: 시바ㆍ재팬(주), 페닐비스(2,4,6-트리메틸벤조일)-포스핀옥시드I-819: Ciba Japan Co., Ltd., Phenylbis (2,4,6-trimethylbenzoyl) -phosphine oxide
I-379EG: 시바ㆍ재팬(주), 2-(디메틸아미노)-2-(4-메틸벤질)-1-(4-모르폴리노페닐)부탄-1-온I-379EG: Shiba Japan Co., Ltd., 2- (dimethylamino) -2- (4-methylbenzyl) -1- (4-morpholinophenyl) butan-1-one
1B2PZ: 시꼬꾸 가세이 고교(주), 1-벤질-2-페닐이미다졸1b2pz: Shikoku Kasei Kogyo Co., Ltd., 1-benzyl-2-phenylimidazole
1: 인쇄판 외부 프레임
2: 메쉬 인쇄판 내의 수지로 매립된 부분
3: 메쉬 인쇄판 내의 개구부
4: 스키지
5: 감광성 접착제
6: 반도체 웨이퍼
7: 감광성 접착제층
8: 노광에 의해 B 스테이지화된 감광성 접착제층
9: 프레임
10: 다이싱 필름
11: 접착제층 부착 반도체 칩
12: 다이싱 블레이드
13a: 1단째의 반도체 칩
13b: 2단째의 반도체 칩
14: 지지 부재
15: 밀봉재
16: 1단째의 반도체 칩과 지지 부재를 접합하는 감광성 접착제층
17: 2단째의 반도체 칩과 1단째의 반도체 칩을 접합하는 감광성 접착제층
18: 본딩 와이어
20: 접착제층 부착 반도체 웨이퍼1: printing plate outer frame
2: resin-embedded portion in the mesh printing plate
3: opening in mesh printing plate
4: Skiing
5: photosensitive adhesive
6: Semiconductor wafer
7: photosensitive adhesive layer
8: Photosensitive adhesive layer staged B by exposure
9: frame
10: dicing film
11: semiconductor chip with adhesive layer
12: dicing blade
13a: first-stage semiconductor chip
13b: second-stage semiconductor chip
14: Support member
15: sealing material
16: Photosensitive adhesive bond layer which bonds the 1st-stage semiconductor chip and a support member
17: The photosensitive adhesive bond layer which joins the 2nd semiconductor chip and the 1st semiconductor chip.
18: bonding wire
20: semiconductor wafer with adhesive layer
Claims (9)
상기 감광성 접착제층을 노광에 의해 B 스테이지화하는 공정
을 포함하는, 접착제층 부착 반도체 웨이퍼의 제조 방법.Forming a photosensitive adhesive layer by applying a photosensitive adhesive agent to the entirety of one surface of the semiconductor wafer by screen printing;
B-staging the said photosensitive adhesive bond layer by exposure
The manufacturing method of the semiconductor wafer with an adhesive bond layer containing these.
상기 접착제층 부착 반도체 칩의 반도체 칩을 지지 부재 또는 다른 반도체 칩에 접착하는 공정
을 포함하는 방법에 의해 얻어지는 반도체 장치.The process of individualizing the semiconductor wafer with an adhesive bond layer obtained by the manufacturing method in any one of Claims 1-4, and obtaining a semiconductor chip with an adhesive bond layer,
Bonding a semiconductor chip of the semiconductor chip with an adhesive layer to a support member or another semiconductor chip
A semiconductor device obtained by the method comprising a.
The photosensitive adhesive agent for screen printing containing a thermosetting resin, a radiation polymeric compound, and a photoinitiator, the viscosity in 25 degreeC is 1-100 Pa.s, and a thixotropy index is 1.0-3.0.
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PCT/JP2011/067494 WO2012017955A1 (en) | 2010-08-03 | 2011-07-29 | Method for manufacturing semiconductor wafer provided with adhesive layer, photosensitive adhesive, and semiconductor device |
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JP (1) | JPWO2012017955A1 (en) |
KR (1) | KR20130046426A (en) |
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TWI685515B (en) * | 2016-12-20 | 2020-02-21 | 日商旭化成股份有限公司 | 2-layer photosensitive layer reel |
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JP2007258508A (en) * | 2006-03-24 | 2007-10-04 | Sumitomo Bakelite Co Ltd | Adhesive for semiconductor, semiconductor device using the same, and manufacturing method of semiconductor device |
JP2008277803A (en) * | 2007-04-04 | 2008-11-13 | Hitachi Chem Co Ltd | Resin paste composition for die bonding, manufacturing method for semiconductor device using it, and semiconductor device |
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- 2011-07-29 KR KR1020137001511A patent/KR20130046426A/en not_active Application Discontinuation
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JPWO2012017955A1 (en) | 2013-10-03 |
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