KR20130033232A - Touch sensor using coating film having high hardness and method of manufacturing the same - Google Patents

Touch sensor using coating film having high hardness and method of manufacturing the same Download PDF

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Publication number
KR20130033232A
KR20130033232A KR1020110097188A KR20110097188A KR20130033232A KR 20130033232 A KR20130033232 A KR 20130033232A KR 1020110097188 A KR1020110097188 A KR 1020110097188A KR 20110097188 A KR20110097188 A KR 20110097188A KR 20130033232 A KR20130033232 A KR 20130033232A
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KR
South Korea
Prior art keywords
high hardness
touch sensor
insulating film
substrate
black matrix
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Application number
KR1020110097188A
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Korean (ko)
Inventor
김성희
김지혜
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엘지디스플레이 주식회사
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Priority to KR1020110097188A priority Critical patent/KR20130033232A/en
Publication of KR20130033232A publication Critical patent/KR20130033232A/en

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Abstract

PURPOSE: A touch sensor using a hard insulating film and a manufacturing method thereof are provided to prevent chemical damage to a black matrix caused by an etchant and a stripper by coating a substrate including the black matrix with the hard insulating film and progressing a touch sensor array process. CONSTITUTION: A black matrix(112) is formed on an edge unit on a first surface of a substrate(110). A hard insulating film(114) is coated on the first surface of the substrate to cover the black matrix. A touch sensor array is formed on the hard insulating film. The hard insulating film includes a silicon hard binder of 10-30wt% maintaining high hardness higher than 9H and a low fired solvent of 70-90wt% calcined in a temperature less than 105>=. The silicon hard binder uses TEOS(TetraEthly OrthoSilicate) or SSQ(SilSesQuioxane). The low fired solvent uses one of IPA(IsoPropyl Alcohol), Xylene, Ethyl acetate, and MEK(Methyl Ethyl Ketone).

Description

Touch sensor using high hardness insulating film and manufacturing method thereof {TOUCH SENSOR USING COATING FILM HAVING HIGH HARDNESS AND METHOD OF MANUFACTURING THE SAME}

The present invention relates to a touch sensor, and more particularly, to a touch sensor capable of preventing damage to a black matrix due to a subsequent process using a high hardness insulating film and a method of manufacturing the same.

Today, touch sensors (touch screens and touch panels) capable of inputting information by touch on screens of various display devices are widely applied as information input devices of computer systems. The touch sensor allows the user to easily use the display information by simply touching the screen with a finger or a stylus to select or move the display information.

The touch sensor senses a touch and a touch position generated on the screen of the display device and outputs the touch information, and the computer system analyzes the touch information and executes an instruction. As a display device, a flat panel display device such as a liquid crystal display device, a plasma display panel, and an organic light emitting diode display device is mainly used.

As the touch sensor technology, there are resistance film type, capacitive type, optical type, infrared type, ultrasonic type, and electromagnetic type depending on the sensing principle. In consideration of the ease and the sensing force of the recent manufacturing method, a capacitive touch sensor that recognizes a touch according to the capacitive variable is mainly used. The touch sensor may be configured as an add-on touch sensor manufactured in the form of a panel and attached to an upper portion of the display device, or a modified add-on attached to the upper portion of the display device by forming a touch sensor on a rear surface of the cover substrate. (Modified add-on) It consists of a touch sensor.

The touch sensor forms a black matrix for preventing light leakage in the bezel part corresponding to the non-sensing area (non-display area) surrounding the sensing area (display area). For example, a modified add-on type touch sensor first forms a black matrix on the outer bezel portion before forming the touch sensor array on the back surface of the cover substrate.

However, since the black matrix is chemically damaged by an etchant, a stripper, or the like in the subsequent process of forming the touch sensor array after forming the black matrix, the black matrix may be discolored or line mura may occur.

The present invention has been made to solve the conventional problems, the problem to be solved by the present invention relates to a touch sensor that can prevent damage to the black matrix due to a subsequent process using a high hardness insulating film and a manufacturing method thereof. .

In order to solve the above problems, the touch sensor according to the embodiment of the present invention and the black matrix formed on the outer surface on the first surface of the substrate; A high hardness insulating film coated on the first surface of the substrate to cover the black matrix; And a touch sensor array formed on the high hardness insulating film.

The touch sensor further includes a second high hardness insulating film formed entirely on the second surface of the substrate.

A display device according to the present invention includes a display panel; The touch sensor attached to the display panel through an adhesive layer; In the touch sensor, the touch sensor array is attached to the display panel through the adhesive layer.

A method of manufacturing a touch sensor according to an embodiment of the present invention includes the steps of forming a black matrix formed on an outer portion on a first surface of a substrate; Coating a high hardness insulating film on the first surface of the substrate to cover the black matrix; Forming a touch sensor array on the high hardness insulating film.

The high hardness insulating film includes a 10 wt% to 30 wt% silicon-based high hardness binder that maintains a high hardness of 9H or more while ensuring permeability, and a 70 wt% to 90 wt% low temperature calcining solvent capable of baking at a low temperature of 150 ° C. or lower.

The high hardness binder uses TEOS (TetraEthly OrthoSilicate) or SSQ (SilSesQuioxane).

The low temperature calcined solvent uses any one of IPA (IsoPropyl Alcohol), xylene (Xylene), ethyl acetate (Ethyl acetate), and methyl ethyl ketone (MEK).

The high hardness insulating film is formed using a slit coating, spin coating, bar coating or silkscreen coating method.

The manufacturing method of the present invention further includes forming a second high hardness insulating film on the second surface of the substrate.

The high hardness insulating film is simultaneously formed on both surfaces of the substrate on which the black matrix is formed through a roll-to-roll coating method.

According to the present invention, a touch sensor and a method of manufacturing the same are coated with a high hardness insulating film on a substrate on which a black matrix is formed in a non-display area of the outer portion, or a high hardness insulating film is coated on both surfaces of a substrate on which a black matrix is formed, followed by subsequent touches. By proceeding with the sensor array process, it is possible to prevent chemical damage of the black matrix due to etchant and stripper in the subsequent process.

1A and 1B are cross-sectional views illustrating touch sensor array substrates according to first and second embodiments of the present invention, respectively.
2 is a plan view illustrating a portion of a touch sensor array substrate according to a first embodiment of the present invention.
FIG. 3 is a cross-sectional view of the touch sensor array substrate illustrated in FIG. 2 taken along cutting lines I-I ', II-II', and III-III '.
4A to 4G are cross-sectional views sequentially illustrating a method of manufacturing the touch sensor array substrate shown in FIG. 3.
5 is a cross-sectional view illustrating a touch sensor array substrate according to a second embodiment of the present invention.
6A and 6B are cross-sectional views schematically illustrating a touch sensor integrated display device according to first and second embodiments of the present invention.
7a and 7b is a view showing a comparison between the chemical damage of the conventional touch sensor array substrate according to the present invention.

1A and 1B are cross-sectional views illustrating touch sensor array substrates according to first and second embodiments of the present invention, respectively.

Referring to the first embodiment illustrated in FIG. 1A, a black matrix 112 for preventing light leakage is formed on a bezel portion corresponding to an unsensing region (non-display region) located at an outer portion of the substrate 110. A high hardness insulating film 114 for protecting the matrix 112 is coated to cover the black matrix 112. Alternatively, as shown in FIG. 1B, the high hardness insulating films 114 and 116 may be coated not only on the top surface but also on the rear surface of the substrate 110 on which the black matrix 112 is formed, as shown in the second embodiment. Subsequently, a touch sensor array is formed on the high hardness insulating layer 114 covering the black matrix 112.

As the substrate 110, tempered glass is used, or a plastic material such as PpolyEethylene Terephthalate (PET) or PpolyCarbonate (PC) is used. In particular, when a plastic substrate is used as the substrate 110, a black matrix is formed on the top surface of the substrate 110 before the high hardness insulating films 114 and 116 are coated on the top and back surfaces of the substrate 110 as shown in FIG. 1B. By forming the 112, the black matrix 112 is protected in a subsequent process by the high hardness insulating film 114 formed thereon.

The high hardness insulating films 114 and 116 include a 10 wt% to 30 wt% high hardness binder and a 70 wt% to 90 wt% low temperature baking solvent. As the high hardness binder, a silicon-based binder is used to maintain a high hardness property of 9H or more, and for example, TEOS (TetraEthly OrthoSilicate) or SSQ (SilSesQuioxane) binder is used. As a solvent, a low-temperature calcining solvent which can be calcined at a low temperature below 150 ° C is used. For example, IPA (IsoPropyl Alcohol), xylene (Xylene), ethyl acetate, methyl ethyl ketone (Methyl Ethyl Ketone; MEK) ) Is used.

The high hardness insulating films 114 and 116 are formed on the substrate 110 on which the black matrix 112 is formed by using a slit coating, spin coating, bar coating, or silk screen coating method. In particular, when the high hardness insulating films 114 and 116 are coated on both surfaces of the substrate 110 on which the black matrix 112 is formed, as illustrated in FIG. 1B, the black matrix 112 is formed using a roll-to-roll coating method. The high hardness insulating films 114 and 116 may be simultaneously coated on both surfaces of the substrate 110 on which is formed.

As described above, in the present invention, the high hardness insulating film 114 is formed on the black matrix 112 before the subsequent process of forming the touch sensor array, so that the black matrix 112 is formed by the high hardness insulating film 104 in the subsequent process. This protects against chemical damage caused by etchant and stripper. In addition, the high hardness insulating films 114 and 116 serve as a cushion in a cutting or scribing process of cutting the desired size after completion of the touch sensor array to prevent cracking of the substrate 110. It plays a role.

2 is a plan view showing a portion of a touch sensor array substrate according to an exemplary embodiment of the present invention, and FIG. 3 is a cut line I-I ', II-II', or III-III 'of the touch sensor array substrate shown in FIG. It is sectional drawing which shows the cross-sectional structure cut along.

The touch sensor array substrate is divided into a sensing area SA in which a touch sensor is formed, and an unsensing area NSA of an outer portion surrounding the sensing area SA. In the sensing area SA, a capacitive touch sensor that senses a touch by sensing a change in capacitance generated when a small amount of electric charge moves to a touch point when a conductor such as a human body or a stylus touches a substrate is formed. A black matrix 112 for preventing light leakage is formed on the substrate 110 in the bezel portion corresponding to the non-sensing area NSA. The high hardness insulating layer 114 is coated on the substrate 110 on which the black matrix 112 is formed, that is, the entire surface including the sensing area SA and the non-sensing area NSA of the substrate 110. As described above, the high hardness insulating layer 114 includes a high hardness binder that maintains high hardness characteristics of 9H or more while ensuring transmittance.

A capacitive touch sensor array is formed on the high hardness insulating layer 114 covering the black matrix 112.

The capacitive touch sensor array includes a plurality of first sensing electrode patterns 150 formed in the sensing area SA in a row direction, a plurality of second sensing electrode patterns 160 formed in a column direction, and a non-sensing area. The NSA includes a routing line 170 and a pad 180 connected to the first and second sensing electrode patterns 150 and 160, respectively.

The first sensing electrode pattern 150 disposed in each row direction is a bridge that electrically connects the plurality of first sensing electrodes 152 formed mainly in a rhombus and the first sensing electrodes 152 adjacent in the row direction to each other. An electrode 154 is provided. The bridge electrode 154 is formed on the high hardness insulating layer 112, and the organic insulating layer 120 is formed on the bridge electrode 152 using a transparent electrode material. In the organic insulating layer 120, a pair of contact holes 156 exposing both ends of the bridge electrode 154 are formed. First sensing electrodes 152 are formed on the organic insulating layer 120 using a transparent electrode material, and the first sensing electrodes 152 are electrically connected to the bridge electrode 154 via the contact hole 156. . Accordingly, the first sensing electrodes 152 adjacent in the row direction are electrically connected through the contact hole 156 and the bridge electrode 154 passing through the organic insulating layer 120.

The second sensing electrode pattern 160 arranged in each column direction is a connection that electrically connects the plurality of second sensing electrodes 162 formed mainly of a rhombus and the second sensing electrodes 162 adjacent in the column direction to each other. An electrode 164 is provided. Referring to FIG. 3, the second sensing electrode 162 and the connection electrode 164 are formed of a transparent electrode material on the organic insulating layer 120 together with the first sensing electrode 152 described above, and the first sensing electrode ( It is formed at a predetermined distance so as to be insulated from the 152.

The first and second sensing electrode patterns 150 and 160 are driven by a touch controller (not shown), and form a conductive touch object and a capacitor that touch the cover substrate 110 to change a capacitance to indicate a touch signal. Outputs

The first and second sensing electrode patterns 150 and 160 may include a flexible printed circuit (FPC) in which a touch controller is mounted through a routing line 170 and a pad 180 formed in the non-sensing area NSA. It is electrically connected to the substrate.

The routing line 170 includes a lower routing line 172 and an upper routing line 174 formed on the high hardness insulating layer 114, and the upper routing line 174 may be omitted. The lower routing line 172 is formed of a low resistance metal material on the high hardness insulating layer 114, and the upper routing line 174 forms the lower routing line 172 with a transparent metal material together with the bridge electrode 154 described above. It is formed so as to surround the upper routing line 174 can be omitted.

The pad 180 is electrically connected to the intermediate pad 184 through the lower pad 182 and the intermediate pad 184 formed on the high hardness insulating layer 114 and the contact hole 186 penetrating through the organic insulating layer 120. The upper pad 188 is connected, and the intermediate pad 184 can be omitted. The lower pad 182 is formed on the high hardness insulating film 114 together with the lower routing line 172 described above and made of a low resistance metal material, and the intermediate pad 184 includes the bridge electrode 154 and the upper routing line (described above). The upper pad 188 is formed together with the first and second sensing electrodes 152 and 162 together with the first and second sensing electrodes 152 and 162 and the contact hole 186 on the organic insulating layer 120. It is formed so as to be electrically connected to the intermediate pad 184.

The passivation layer 130 is further formed on the first and second sensing electrodes 150 and 160 and the routing line 170. The passivation layer 130 further includes a contact hole 132 that exposes the upper pad 188 of the pad 180.

4A to 4G are cross-sectional views sequentially illustrating a method of manufacturing the touch sensor array substrate illustrated in FIG. 3.

Referring to FIG. 4A, a black matrix 112 is formed in the non-sensing region NSA on the substrate 110.

Referring to FIG. 4B, a high hardness insulating layer 114 covering the black matrix 112 is coated on the substrate 110 on which the black matrix 112 is formed. The high hardness insulating film 114 includes a 10 wt% to 30 wt% high hardness binder and a 70 wt% to 90 wt% low temperature baking solvent. As the high hardness binder, a silicon-based binder is used to maintain a high hardness property of 9H or more, and for example, TEOS (TetraEthly OrthoSilicate) or SSQ (SilSesQuioxane) binder is used. As a solvent, a low-temperature calcining solvent which can be calcined at a low temperature below 150 ° C is used. For example, IPA (IsoPropyl Alcohol), xylene (Xylene), ethyl acetate, methyl ethyl ketone (Methyl Ethyl Ketone; MEK) ) Is used. The high hardness insulating layer 114 is formed on the substrate 110 on which the black matrix 112 is formed by using a slit coating, spin coating, bar coating, roll-to-roll coating, or silk screen coating method.

Referring to FIG. 4C, the lower routing line 172 and the lower pad 182 are formed of a metal material such as molybdenum (Mo) in the non-sensing region NSA on the high hardness insulating layer 114. The lower routing line 172 and the lower pad 182 are formed by depositing a metal material on the high hardness insulating film 114 and then patterning the photolithography process and etching process.

Referring to FIG. 4D, the bridge electrode 154 is formed in the sensing area SA of the high hardness insulating layer 114, and the upper routing line 174 is formed on the lower routing line 172 of the non-sensing area NSA. The intermediate pad 184 is formed on the lower pad 182. The bridge electrode 154 and the upper routing line 174 and the intermediate pad 184 are formed by depositing a transparent metal material and then patterning the photolithography process and etching process. As the transparent metal material, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), or antimony tin oxide (ATO) is used.

Referring to FIG. 4E, an organic insulating layer 120 having a flat surface is formed on the high hardness insulating layer 114 on which the bridge electrode 154, the upper routing line 174, and the intermediate pad 184 are formed. The organic insulating layer 120 is patterned through a process and an etching process to form a contact hole 156 exposing the bridge electrode 154 and a contact hole 186 exposing the intermediate pad 184.

Referring to FIG. 4F, the first and second sensing electrodes 152 and 162 and the connection electrode 164 are formed in the sensing area SA on the organic insulating layer 120 and the upper pad in the non-sensing area NSA. 188 is formed. The first and second sensing electrodes 152 and 162 and the upper pad 188 are formed by depositing the above-described transparent metal material on the organic insulating layer 120 and then patterning the photolithography process and the etching process. The first sensing electrodes 152 are electrically connected to the bridge electrode 154 through the contact hole 156 penetrating the organic insulating layer 120. The upper pad 188 is electrically connected to the intermediate pad 184 through a contact hole 186 passing through the organic insulating layer 120.

Referring to FIG. 4G, the passivation layer 130 is formed on the organic insulating layer 120 on which the first and second sensing electrodes 152 and 162, the connection electrode 164, and the upper pad 188 are formed. The passivation layer 130 is patterned through a photolithography process and etching fixing to form a contact hole 132 exposing the upper pad 188.

5 is a cross-sectional view illustrating a touch sensor array substrate according to a second embodiment of the present invention. The touch sensor array substrate shown in FIG. 5 has a high hardness insulating film 114 coated on the upper surface of the substrate 110 on which the black matrix 112 is formed as compared to the touch sensor array substrate shown in FIG. 3. Since the high hardness insulating film 116 is also coated on the rear surface, the same components are provided, and thus descriptions of the overlapping components will be omitted.

The high hardness insulating films 114 and 116 shown in FIG. 5 are simultaneously coated on the back surface as well as the top surface of the substrate 110 on which the black matrix 112 is formed using a roll-to-roll coating method. Subsequently, a touch sensor array is formed on the high hardness insulating layer 114 covering the black matrix 112 as described above.

6A and 6B are cross-sectional views illustrating a touch sensor integrated display device according to first and second embodiments of the present invention.

The touch sensor integrated display device illustrated in FIGS. 6A and 6B includes a display panel 10 and a touch sensor 100 attached by the first adhesive layer 20 on the display panel 10.

As the display panel 10, a flat panel display panel such as a liquid crystal panel, an organic light emitting diode display panel, a plasma display panel, or the like is used. For example, when the liquid crystal panel is used as the display panel 10, the display panel 10 includes a lower substrate on which a thin film transistor array including a thin film transistor and a pixel electrode is formed, and a color filter array including a black matrix and a color filter. The upper substrate, the liquid crystal layer formed between the upper and lower substrates, the upper and lower polarizing plates attached to the outer surface of the upper and lower substrates, respectively, and a backlight unit positioned below the lower polarizing plate. The common electrode is formed on the lower substrate or the upper substrate. The liquid crystal layer is driven by a vertical electric field such as a TN (Twisted Nematic) mode or VA (Vertical Alignment) mode, or by a horizontal electric field such as an IPS (In-Plane Switching) mode or an FFS (Fringe Field Switching) mode.

As the touch sensor 100, a capacitive touch sensor may be used. As illustrated in FIG. 6A, the touch sensor 100 includes a black matrix 112 formed in the non-sensing region NSA on the rear surface of the cover substrate 110, a high hardness insulating layer 114 covering the black matrix 112, and The touch sensor array TSA formed on the high hardness insulating layer 114 may be provided, or the high hardness insulating layer 116 may be further coated on the entire surface of the cover substrate 110 as shown in FIG. 6B. As the cover substrate 110, tempered glass or transparent polymer plastic is used.

The touch sensor 100 is attached onto the display panel 10 by an adhesive layer 20 applied to the front surface of the display panel 10. As the adhesive layer 20, an optical elastic resin, for example, an SVR (Super Viewing Resin), which is an acrylic ultraviolet curable resin, is used. SVR improves visibility and has impact resistance.

7a and 7b is a photograph showing a comparison between the conventional chemical damage of the present invention.

FIG. 7A is a view illustrating a conventional substrate 110 having a black matrix 112 formed on a bezel portion on a substrate 110 after dipping into a stripper for 10 minutes at room temperature. The black matrix 112 is damaged by the stripper and is thus a line. It can be seen that Mura occurred.

FIG. 7B is a diagram illustrating a 10 minute dip of the substrate 110 of the present invention coated with a high hardness insulating film on a substrate 110 on which a black matrix 112 is formed, at room temperature, for 10 minutes. It can be seen that it is not touched by the stripper.

As described above, in the present invention, the high hardness insulating film 114 is formed on the black matrix 112 before the subsequent process of forming the touch sensor array, so that the black matrix 112 is formed by the high hardness insulating film 104 in the subsequent process. This protects against chemical damage caused by etchant and stripper. In addition, the high hardness insulating films 114 and 116 serve as a cushion in a cutting or scribing process of cutting the desired size after completion of the touch sensor array to prevent cracking of the substrate 110. It plays a role.

10: display panel 20: adhesive layer
100: touch sensor 112: black matrix
114, 116: high hardness insulating film 120: organic insulating film
130: passivation layer 132: contact hole
150: first sensing electrode pattern 152: first sensing electrode
154: bridge electrode 156: contact hole
160: second sensing electrode pattern 162: second sensing electrode
164: connection electrode 170: routing line
172: lower routing line 174: upper routing line
180: pad 182: lower pad
184: middle pad 186: contact hole
188: top pad

Claims (13)

A black matrix formed on an outer portion of the first surface of the substrate;
A high hardness insulating film coated on the first surface of the substrate to cover the black matrix;
And a touch sensor array formed on the high hardness insulating film. The method according to claim 1,
The high hardness insulating film is a silicon-based high hardness binder of 10wt% ~ 30wt% to maintain a high hardness of 9H or more while ensuring the transmittance;
Touch sensor, characterized in that it comprises a low-temperature fired solvent of 70wt% ~ 90wt% capable of firing at low temperature below 150 ℃. The method according to claim 2,
The high hardness binder is a touch sensor, characterized in that using TEOS (TetraEthly OrthoSilicate) or SSQ (SilSesQuioxane). The method according to claim 2,
The low temperature calcined solvent is any one of IPA (IsoPropyl Alcohol), xylene (Xylene), ethyl acetate (Ethyl acetate), methyl ethyl ketone (Methyl Ethyl Ketone; MEK). The method according to claim 2,
And a second high hardness insulating film formed entirely on the second surface of the substrate. A display panel;
A touch sensor according to any one of claims 1 to 6 attached on the display panel via an adhesive layer;
The touch sensor is a display device, characterized in that the touch sensor array is attached to the display panel through the adhesive layer. Forming a black matrix formed on an outer portion of the first surface of the substrate;
Coating a high hardness insulating film on the first surface of the substrate to cover the black matrix;
And forming a touch sensor array on the high hardness insulating film. The method of claim 7,
The high hardness insulating film is a silicon-based high hardness binder of 10wt% ~ 30wt% to maintain a high hardness of 9H or more while ensuring the transmittance;
A method of manufacturing a touch sensor, comprising 70 wt% to 90 wt% of a low temperature calcining solvent capable of firing even at a low temperature below 150 ° C. The method according to claim 8,
The high hardness binder is a manufacturing method of the touch sensor, characterized in that using TEOS (TetraEthly OrthoSilicate) or SSQ (SilSesQuioxane). The method according to claim 8,
The low temperature calcined solvent may be any one of IPA (IsoPropyl Alcohol), xylene (Xylene), ethyl acetate (Ethyl acetate), and methyl ethyl ketone (MEK). The method according to claim 8,
And forming a second high hardness insulating film on the second surface of the substrate. The method of claim 7,
The high hardness insulating film is a method of manufacturing a touch sensor, characterized in that formed using a slit coating, spin coating, bar coating or silk screen coating method. The method of claim 11,
The high hardness insulating film is a method of manufacturing a touch sensor, characterized in that formed on both sides of the substrate on which the black matrix is formed through a roll-to-roll coating method.
KR1020110097188A 2011-09-26 2011-09-26 Touch sensor using coating film having high hardness and method of manufacturing the same KR20130033232A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150077092A (en) * 2013-12-27 2015-07-07 엘지디스플레이 주식회사 Touch screen panel and manufacturing method thereof
EP3767445A1 (en) * 2016-11-23 2021-01-20 LG Display Co., Ltd. Display panel and touch display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150077092A (en) * 2013-12-27 2015-07-07 엘지디스플레이 주식회사 Touch screen panel and manufacturing method thereof
EP3767445A1 (en) * 2016-11-23 2021-01-20 LG Display Co., Ltd. Display panel and touch display device

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