KR101970578B1 - Touch sensor device using coating film having high hardness and method of manufacturing the same - Google Patents

Abstract

The present invention relates to a touch sensor device and a method of manufacturing the same that can prevent damage to a black matrix due to a subsequent process using a high hardness insulating film, A black matrix disposed on the substrate; A high hardness insulating film coated on the first surface of the substrate so as to cover the black matrix; A plurality of routing lines which are located in an outer region surrounding the sensing region on the hardened insulating film and overlapped with the black matrix and connected to the touch sensor array; And a plurality of pads which overlap the black matrix and are connected to the plurality of routing lines, respectively.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a touch sensor device using a high hardness insulating film,

The present invention relates to a touch sensor, and more particularly, to a touch sensor device capable of preventing damage to a black matrix due to a subsequent process using a high-hardness insulating film and a manufacturing method thereof.

2. Description of the Related Art Today, touch sensors (touch screens, touch panels) capable of inputting information by touching on screens of various display devices are widely applied as information input devices of computer systems. The touch sensor allows the user to easily use the display information by simply touching the screen with a finger or a stylus to select or move the display information.

The touch sensor senses a touch and a touch position generated on the screen of the display device and outputs the touch information, and the computer system analyzes the touch information and executes an instruction. As a display device, a flat panel display device such as a liquid crystal display device, a plasma display panel, and an organic light emitting diode display device is mainly used.

As the touch sensor technology, there are resistance film type, capacitive type, optical type, infrared type, ultrasonic type, and electromagnetic type depending on the sensing principle. Recently, a capacitive touch sensor that recognizes a touch according to a capacitive variable is mainly used in consideration of easiness of manufacturing method and sensing power. The touch sensor may be an add-on touch sensor formed in the form of a panel and attached to the upper portion of the display device, or a touch sensor may be formed on the back surface of the cover substrate, (Modified Add-on) touch sensor.

The touch sensor forms a black matrix for preventing light leakage in a bezel portion corresponding to a non-sensing region (non-display region) surrounding the sensing region (display region). For example, a modified add-on type touch sensor first forms a black matrix on the outer bezel before forming the touch sensor array on the backside of the cover substrate.

However, in the process of forming the subsequent touch sensor array after forming the black matrix, the black matrix is chemically damaged due to the etchant, the stripper, or the like, thereby causing discoloration of the black matrix or problems such as line mismatch.

SUMMARY OF THE INVENTION The present invention has been made to solve the conventional problems, and it is an object of the present invention to provide a touch sensor device and a method of manufacturing the touch sensor device that can prevent damage to a black matrix due to a subsequent process using a high- .

According to an aspect of the present invention, there is provided a touch sensor device including: a black matrix positioned in an outer area on a first surface of a substrate; A high hardness insulating film coated on the first surface of the substrate so as to cover the black matrix; A plurality of routing lines which are located in an outer region surrounding the sensing region on the hardened insulating film and overlapped with the black matrix and connected to the touch sensor array; And a plurality of pads which overlap the black matrix and are connected to the plurality of routing lines, respectively.

The touch sensor array according to an embodiment of the present invention includes a plurality of first sensing electrode patterns connected to each other through a first connection electrode located on a high-hardness insulating film and including first sensing electrodes positioned on a high-hardness insulating film, Includes a plurality of second sensing electrode patterns which are located on an insulating film and are connected to each other through a second connection electrode intersecting the first connection electrode and the organic insulation film and include second sensing electrodes positioned on the high- do. The first connection electrode is located in contact with the high hardness insulating film and the organic insulating film is located on the high hardness insulating film so as to cover the first connection electrode. The first sensing electrodes are located on the organic insulating film and are connected to the first connecting electrode through a plurality of contact holes passing through the organic insulating film. The second connection electrode and the second sensing electrodes are spaced apart from the second sensing electrodes on the organic insulation layer.

Each of the plurality of routing lines includes a lower routing line located on the hardened insulating film, or includes a lower routing line and an upper routing line located on the hardened insulating film to cover the lower routing line.

Each of the plurality of pads includes a lower pad connected to the lower routing line and located on the first same layer and connected to the lower routing line on the hardened insulating film, And an upper pad connected to the intermediate pad through a contact hole which is located on the organic insulating film covering the pad, the lower pad and the intermediate pad and penetrates the organic insulating film.

The touch sensor device according to an embodiment further includes a passivation film positioned on the organic insulating film so as to cover the touch sensor array, the plurality of routing lines, and the plurality of pads, and the plurality of pads Each upper pad is exposed.

The touch sensor device according to an embodiment further includes a high hardness insulating film covering the entire second surface of the substrate.

A display device according to an embodiment includes a display panel and the above-described touch sensor device attached on the display panel.

The high-hardness insulating film according to one embodiment is formed simultaneously on both sides of a substrate on which a black matrix is formed through a roll-to-roll coating method.

A touch sensor device and a method of manufacturing the same according to the present invention are characterized in that a high hardness insulating film is coated on a substrate on which a black matrix is formed in a non-display area of an outer frame, a high hardness insulating film is coated on both sides of a substrate on which a black matrix is formed, Proceeding with the touch sensor array process, it is possible to prevent chemical damage of the black matrix due to etchant, stripper, etc. in the subsequent process.

1A and 1B are sectional views respectively showing touch sensor array substrates according to first and second embodiments of the present invention.
2 is a plan view showing a part of a touch sensor array substrate according to a first embodiment of the present invention.
Fig. 3 is a cross-sectional view of the touch sensor array substrate shown in Fig. 2 cut along the cutting lines I-I ', II-II', and III-III '.
4A to 4G are cross-sectional views showing steps of the method of manufacturing the touch sensor array substrate shown in Fig.
5 is a cross-sectional view illustrating a touch sensor array substrate according to a second embodiment of the present invention.
6A and 6B are cross-sectional views schematically showing a touch sensor integrated type display device according to the first and second embodiments of the present invention.
FIGS. 7A and 7B are diagrams showing the chemical damage of the conventional touch sensor array substrate according to the present invention.

1A and 1B are sectional views respectively showing touch sensor array substrates according to first and second embodiments of the present invention.

1A, a black matrix 112 for preventing light leakage is formed on a bezel corresponding to a non-sensing area (non-display area) located on an outer frame on a substrate 110, A high hardness insulating film 114 for protecting the matrix 112 is coated so as to cover the black matrix 112. [ Alternatively, the hard insulating films 114 and 116 may be coated on the back surface as well as the upper surface of the substrate 110 on which the black matrix 112 is formed as in the second embodiment shown in FIG. 1B. Next, a touch sensor array is formed on the high-hardness insulating film 114 covering the black matrix 112.

Tempered glass may be used as the substrate 110, or a plastic material such as PET (Polyethylene Terephthalate) or PC (PolyCarbonate) may be used. Particularly, when a plastic substrate is used as the substrate 110, a black matrix (not shown) is formed on the top surface of the substrate 110 before the high-hardness insulating films 114 and 116 are coated on the top and back surfaces of the substrate 110, The black matrix 112 is protected in the subsequent process by the high hardness insulating film 114 formed thereon.

The high hardness insulating films 114 and 116 include 10 wt% to 30 wt% of a high hardness binder and 70 wt% to 90 wt% of a low temperature calcination solvent. As the high hardness binder, a silicone (silicate) binder is used, for example, TEOS (TetraEthly OrthoSilicate) or SSQ (SilSesQuioxane) binder is used to maintain high hardness characteristics of 9H or more while ensuring transparency. As the solvent, a low-temperature firing solvent capable of firing at a low temperature of 150 ° C or less is used. For example, IPA (isopropylacrylate), xylene, ethyl acetate, methyl ethyl ketone ).

The hard insulating films 114 and 116 are formed on the substrate 110 on which the black matrix 112 is formed by slit coating, spin coating, bar coating or silk screen coating. In particular, when the high-hardness insulating films 114 and 116 are coated on both sides of the substrate 110 on which the black matrix 112 is formed as shown in FIG. 1B, a black matrix 112 The high hardness insulating films 114 and 116 may be simultaneously coated on both sides of the substrate 110 on which the insulating layer 110 is formed.

As described above, in the present invention, the high-hardness insulating film 114 is formed on the black matrix 112 before the subsequent step of forming the touch sensor array, so that the black matrix 112 is formed by the high-hardness insulating film 104 By this protection, it is possible to prevent the chemical damage due to the etchant, the stripper, and the like. The hard insulating films 114 and 116 serve as a cushion in a cutting or scribing process for cutting a desired size of the touch sensor array after completion of the touch sensor array to prevent cracking of the substrate 110 .

FIG. 2 is a plan view showing a part of a touch sensor array substrate according to an embodiment of the present invention. FIG. 3 is a cross-sectional view of the touch sensor array substrate shown in FIG. 2, taken along a line I - I ', II - II', III - Sectional view taken along line II-II of FIG.

The touch sensor array substrate is divided into a sensing area SA where a touch sensor is formed and a non-sensing area NSA surrounding the sensing area SA. In the sensing area SA, a capacitance type touch sensor is formed that senses a touch by sensing a change in capacitance caused by a small amount of charge moving to a touch point when a conductor such as a human body or a stylus touches the substrate. A black matrix 112 for preventing light leakage is formed on the substrate 110 in the bezel portion corresponding to the non-sensing region NSA. The high hardness insulating film 114 is coated on the entire surface including the sensing area SA and the non-sensing area NSA of the substrate 110 on the substrate 110 on which the black matrix 112 is formed. The high-hardness insulating film 114 includes a high-hardness binder that maintains high hardness characteristics of 9H or more while securing the transmittance as described above.

A capacitive touch sensor array is formed on the high-hardness insulating film 114 covering the black matrix 112.

The capacitive touch sensor array includes a plurality of first sensing electrode patterns 150 formed in the sensing area SA in the row direction, a plurality of second sensing electrode patterns 160 formed in the column direction, A routing line 170 and a pad 180 connected to the first sensing electrode pattern 150 and the second sensing electrode pattern 160, respectively.

The first sensing electrode pattern 150 arranged in each row direction includes a plurality of first sensing electrodes 152 formed mainly of a rhombus pattern and a bridge 152 electrically connecting the first sensing electrodes 152 adjacent to each other in the row direction, Electrode 154 is provided. The bridge electrode 154 is formed on the high hardness insulating film 112 by the transparent electrode material and the organic insulating film 120 is formed on the bridge electrode 152. [ The organic insulating layer 120 is formed with a pair of contact holes 156 for exposing both ends of the bridge electrode 154. The first sensing electrodes 152 are formed of a transparent electrode material on the organic insulating layer 120 and the first sensing electrodes 152 are electrically connected to the bridge electrodes 154 via the contact holes 156 . Accordingly, the first sensing electrodes 152 adjacent in the row direction are electrically connected through the contact hole 156 and the bridge electrode 154 passing through the organic insulating layer 120.

The second sensing electrode pattern 160 arranged in each column direction is formed by connecting a plurality of second sensing electrodes 162 formed mainly in a rhombic pattern and second sensing electrodes 162 adjacent in the column direction to each other electrically And an electrode 164. 3, the second sensing electrode 162 and the connection electrode 164 are formed of a transparent electrode material on the organic insulating layer 120 together with the first sensing electrode 152, and the first sensing electrode 152 152 so as to be insulated from each other.

The first and second sensing electrode patterns 150 and 160 are driven by a touch controller (not shown). The first and second sensing electrode patterns 150 and 160 are formed by forming a conductive touch object and a capacitor that touch the cover substrate 110, .

The first and second sensing electrode patterns 150 and 160 are connected to a flexible printed circuit (FPC) on which a touch controller is mounted through a routing line 170 and a pad 180 formed in a non- And is electrically connected to the substrate.

The routing line 170 is composed of a lower routing line 172 and an upper routing line 174 formed on the hardened insulating film 114 and the upper routing line 174 is omitted. The lower routing line 172 is formed of a low resistance metal material on the hardened insulating film 114 and the upper routing line 174 is connected to the lower routing line 172 with a transparent metal material together with the above- And this upper routing line 174 may be omitted.

The pad 180 is electrically connected to the intermediate pad 184 through the lower pad 182 and the intermediate pad 184 formed on the hard insulating film 114 and the contact hole 186 penetrating the organic insulating film 120. [ And the upper pad 188 connected thereto, and the intermediate pad 184 may be omitted. The lower pad 182 is formed on the hardened insulating film 114 with a low resistance metal material together with the lower routing line 172 described above and the intermediate pad 184 is formed on the bridge electrode 154 and the upper routing line And the upper pad 188 is formed of a transparent metal material together with the first and second sensing electrodes 152 and 162. The contact hole 186 is formed on the organic insulating layer 120. [ And is electrically connected to the intermediate pad 184.

A passivation film 130 is further formed on the first and second sensing electrodes 150 and 160 and the routing line 170. The passivation film 130 further includes a contact hole 132 for exposing the upper pad 188 of the pad 180.

FIGS. 4A to 4G are cross-sectional views showing steps of the method of manufacturing the touch sensor array substrate shown in FIG.

Referring to FIG. 4A, a black matrix 112 is formed on a non-sensing region NSA on a substrate 110. FIG.

Referring to FIG. 4B, a high-hardness insulating film 114 covering a black matrix 112 is coated on a substrate 110 on which a black matrix 112 is formed. The high hardness insulating film 114 includes a high hardness binder of 10 wt% to 30 wt% and a low temperature firing solvent of 70 wt% to 90 wt%. As the high hardness binder, a silicone (silicate) binder is used, for example, TEOS (TetraEthly OrthoSilicate) or SSQ (SilSesQuioxane) binder is used to maintain high hardness characteristics of 9H or more while ensuring transparency. As the solvent, a low-temperature firing solvent capable of firing at a low temperature of 150 ° C or less is used. For example, IPA (isopropylacrylate), xylene, ethyl acetate, methyl ethyl ketone ). The hard insulating film 114 is formed on the substrate 110 on which the black matrix 112 is formed by a slit coating, a spin coating, a bar coating, a roll to roll coating, or a silk screen coating method.

Referring to FIG. 4C, the lower routing line 172 and the lower pad 182 are formed of a metal material such as molybdenum (Mo) in a non-sensing region NSA on the hard insulating film 114. The lower routing line 172 and the lower pad 182 are formed by depositing a metal material on the high-hardness insulating film 114 and then patterning it by a photolithography process and an etching process.

4D, a bridge electrode 154 is formed in the sensing region SA of the hard insulating film 114 and an upper routing line 174 is formed on the lower routing line 172 of the non-sensing region NSA And an intermediate pad 184 is formed on the lower pad 182. The bridge electrode 154 and the upper routing line 174 and the intermediate pad 184 are formed by depositing a transparent metal material and then patterning by a photolithography process and an etching process. Indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), or antimony tin oxide (ATO) are used as transparent metal materials.

4E, an organic insulating layer 120 having a flat surface is formed on the high-hardness insulating layer 114 on which the bridge electrode 154 and the upper routing line 174 and the intermediate pad 184 are formed, The contact hole 156 exposing the bridge electrode 154 and the contact hole 186 exposing the intermediate pad 184 are formed by patterning the organic insulating layer 120 through the process and etching.

Referring to FIG. 4F, first and second sensing electrodes 152 and 162 and a connection electrode 164 are formed in a sensing region SA on the organic insulating layer 120, (188) are formed. The first and second sensing electrodes 152 and 162 and the upper pad 188 are formed by depositing the transparent metal material on the organic insulating layer 120 and then patterning the same by a photolithography process and an etching process. The first sensing electrodes 152 are electrically connected to the bridge electrode 154 through a contact hole 156 passing through the organic insulating layer 120. The upper pad 188 is electrically connected to the intermediate pad 184 through a contact hole 186 penetrating the organic insulating film 120.

4G, a passivation film 130 is formed on the organic insulating layer 120 having the first and second sensing electrodes 152 and 162, the connection electrode 164 and the upper pad 188, The passivation film 130 is patterned through a photolithography process and an etching process to form a contact hole 132 for exposing the upper pad 188.

5 is a cross-sectional view illustrating a touch sensor array substrate according to a second embodiment of the present invention. The touch sensor array substrate shown in FIG. 5 has a structure in which the high-hardness insulating film 114 coated on the upper surface of the substrate 110 on which the black matrix 112 is formed, as well as the touch sensor array substrate shown in FIG. 3, Since the same components are provided on the back surface except that the high-hardness insulating film 116 is further coated, a description of the overlapping components will be omitted.

The high hardness insulating films 114 and 116 shown in FIG. 5 are simultaneously coated on the back surface as well as the upper surface of the substrate 110 on which the black matrix 112 is formed by a roll-to-roll coating method. Next, a touch sensor array is formed on the high-hardness insulating film 114 covering the black matrix 112 as described above.

6A and 6B are cross-sectional views illustrating a touch sensor integrated type display device according to the first and second embodiments of the present invention.

The touch sensor integrated type display device shown in Figs. 6A and 6B includes a display panel 10 and a touch sensor device 100 attached to the display panel 10 by a first adhesive layer 20. Fig.

As the display panel 10, a flat panel display panel such as a liquid crystal panel, an organic light emitting diode display panel, or a plasma display panel is used. For example, when a liquid crystal panel is used as the display panel 10, the display panel 10 includes a lower substrate on which a thin film transistor array including thin film transistors and pixel electrodes is formed, a color filter array including a black matrix and a color filter A liquid crystal layer formed between the upper and lower substrates, an upper and lower polarizer plates respectively attached to outer surfaces of the upper and lower substrates, and a backlight unit positioned below the lower polarizer. The common electrode is formed on the lower substrate or the upper substrate. The liquid crystal layer is driven by a vertical electric field such as a TN (Twisted Nematic) mode or VA (Vertical Alignment) mode, or by a horizontal electric field such as an IPS (In-Plane Switching) mode or an FFS (Fringe Field Switching) mode.

The touch sensor device 100 may use a capacitive touch sensor. 6A, the touch sensor device 100 includes a black matrix 112 formed on the non-sensing area NSA on the back surface of the cover substrate 110, a high-hardness insulating film 114 covering the black matrix 112, A touch sensor array TSA formed on the hard insulating film 114 or a hard insulating film 116 may be further coated on the entire surface of the cover substrate 110 as shown in FIG. As the cover substrate 110, reinforced glass or transparent polymer plastic is used.

The touch sensor device 100 is attached on the display panel 10 by the adhesive layer 20 applied to the front surface of the display panel 10. [ As the adhesive layer 20, SVR (Super Viewing Resin) which is an optical elastic resin, for example, an acrylic ultraviolet curing type resin, is used. SVR improves visibility and has impact resistance.

FIGS. 7A and 7B are photographs comparing the conventional damage and the chemical damage of the present invention. FIG.

7A is a view illustrating a conventional substrate 110 having a black matrix 112 formed on a bezel portion of a substrate 110 after dipping the substrate 110 on a stripper for 10 minutes at room temperature. The black matrix 112 is damaged by a stripper, It can be seen that mura has occurred.

7B is a diagram illustrating a state in which the substrate 110 of the present invention coated with a high hardness insulating film on a substrate 110 on which a black matrix 112 is formed is dipped in a stripper for 10 minutes at room temperature, It can be seen that it was not damaged by the stripper.

As described above, in the present invention, the high-hardness insulating film 114 is formed on the black matrix 112 before the subsequent step of forming the touch sensor array, so that the black matrix 112 is formed by the high-hardness insulating film 104 By this protection, it is possible to prevent the chemical damage due to the etchant, the stripper, and the like. The hard insulating films 114 and 116 serve as a cushion in a cutting or scribing process for cutting a desired size of the touch sensor array after completion of the touch sensor array to prevent cracking of the substrate 110 .

10: display panel 20: adhesive layer
100: touch sensor device 112: black matrix
114, 116: high hardness insulating film 120: organic insulating film
130: passivation film 132: contact hole
150: first sensing electrode pattern 152: first sensing electrode
154: Bridge electrode 156: Contact hole
160: second sensing electrode pattern 162: second sensing electrode
164: connecting electrode 170: routing line
172: lower routing line 174: upper routing line
180: Pad 182: Lower pad
184: intermediate pad 186: contact hole
188: upper pad

Claims (19)

A black matrix positioned in an outer region on a first side of the substrate;
A high hardness insulating film coated on the first surface of the substrate so as to cover the black matrix;
A touch sensor array positioned in a sensing region on the high-hardness insulating film;
A plurality of routing lines located in the outer area surrounding the sensing area on the hardened insulating film and overlapping the black matrix and connected to the touch sensor array;
And a plurality of pads located in the outer area on the hardened insulating film and overlapping the black matrix and connected to the plurality of routing lines, respectively,
The touch sensor array
An organic insulating layer stacked on the high-hardness insulating layer and including contact holes;
And a plurality of first sensing electrodes connected to the first connection electrodes through the contact holes, the first sensing electrodes being disposed on the organic insulation layer, the first sensing electrodes being connected through first connection electrodes positioned between the hard insulating film and the organic insulation film, A first sensing electrode pattern; And
And a second connection electrode which is located on the organic insulation film and is spaced apart from the first sensing electrodes and is connected to the first connection electrodes via second connection electrodes crossing the organic insulation film, And a plurality of second sensing electrode patterns including sensing electrodes. delete The method according to claim 1,
Each of the plurality of routing lines
And a lower routing line located on the high-hardness insulating film,
And a lower routing line and an upper routing line covering the lower routing line and located on the hardened dielectric layer. The method of claim 3,
Each of the plurality of pads
A lower pad connected to the lower routing line and located on the first same layer on the hardened insulating film,
An intermediate pad which is located on the high hardness insulating layer and covers the lower pad and is located on the second same layer as the upper routing line,
And an upper pad located on the organic insulating layer covering the lower pad and the intermediate pad and connected to the intermediate pad through a contact hole penetrating the organic insulating layer and exposing the intermediate pad. The method of claim 4,
The lower routing line and the lower pad are made of the same metal material,
The upper routing line and the intermediate pad are made of the same transparent conductive material,
Wherein the first and second sensing electrodes, the second connection electrode, and the upper pad located on the organic insulating layer are formed of the transparent conductive material. The method of claim 4,
Further comprising a passivation film disposed on the organic insulating film so as to cover the touch sensor array, the plurality of routing lines, and the plurality of pads,
And an upper pad of each of the plurality of pads is exposed through a contact hole passing through the passivation film. The method according to claim 1,
And a high hardness insulating film covering the entire second surface of the substrate. A display panel;
A display device comprising the touch sensor device according to any one of claims 1 to 3, attached to the display panel. The method of claim 8,
Wherein the high hardness insulating film has a hardness of 9H or more. The high hardness insulating film according to claim 9, wherein the high hardness insulating film contains 10 wt% to 30 wt%
And a low-temperature firing solvent of 70 wt% to 90 wt% capable of firing at a low temperature of 150 DEG C or lower. The method of claim 10,
TEOS (TetraEthly OrthoSilicate) or SSQ (SilSesQuioxane) is used as the high hardness binder,
Wherein the low-temperature firing solvent is one selected from the group consisting of IPA (IsoPropyl Alcohol), Xylene, ethyl acetate, and Methyl Ethyl Ketone (MEK). Forming a black matrix in an outer region on a first side of the substrate;
Forming a high-hardness insulating film over the first surface of the substrate so as to cover the black matrix;
Forming a touch sensor array in a sensing region on the high-hardness insulating film;
Forming a plurality of routing lines and a plurality of pads overlapping the black matrix and connected to the touch sensor array in the outer area surrounding the sensing area on the hardened insulating film,
The step of forming the touch sensor array
Forming first connection electrodes on the high-hardness insulating film;
Forming an organic insulating film on the high-hardness insulating film so as to cover the first connection electrodes, and forming first contact holes passing through the organic insulating film; And
The organic light emitting display device of claim 1, further comprising first sensing electrodes connected to the first connection electrodes through the first contact holes, second connection electrodes crossing the first connection electrodes, And forming second sensing electrodes connected to the second sensing electrodes. The method of claim 12,
Wherein forming the plurality of routing lines and the plurality of pads comprises:
Forming a lower routing line of each of the plurality of routing lines and a lower pad of each of the plurality of pads on the hardened insulating film;
Forming an intermediate pad covering the lower pad of each of the plurality of pads when the first connection electrodes are formed, the upper routing line covering the lower routing line of each of the plurality of routing lines,
Forming a second contact hole through the organic insulating layer to expose the intermediate pad when the first contact holes are formed in the organic insulating layer;
When forming the first sensing electrodes, the second connection electrodes, and the second sensing electrodes on the organic insulating film, forming upper pads of each of the plurality of pads connected to the intermediate pads through the second contact holes The method comprising the steps of: 14. The method of claim 13,
The lower routing line and the lower pad are made of the same metal material,
The upper routing line and the intermediate pad are made of the same transparent conductive material,
Wherein the first sensing electrodes, the second sensing electrodes, the second connection electrodes, and the upper pad located on the organic insulating layer are formed of the transparent conductive material. 14. The method of claim 13,
Forming a passivation film on the organic insulating film so as to cover the touch sensor array, the plurality of routing lines and the plurality of pads, and forming a contact hole exposing the upper pad of each of the plurality of pads, Wherein the method comprises the steps of: The method according to any one of claims 12 to 15,
And forming a high hardness insulating film covering the entire second surface of the substrate. 18. The method of claim 16,
Wherein the first and second surfaces of the substrate on which the black matrix is formed are simultaneously formed through a roll-to-roll coating method. 18. The method of claim 16,
The high hardness insulating film has a hardness of 9H or more,
10 wt% to 30 wt% of a silicone-based high-hardness binder,
And a low-temperature firing solvent of 70 wt% to 90 wt% capable of firing at a low temperature of 150 DEG C or less. 19. The method of claim 18,
TEOS (TetraEthly OrthoSilicate) or SSQ (SilSesQuioxane) is used as the high hardness binder,
Wherein the low temperature firing solvent is one selected from the group consisting of IPA (IsoPropyl Alcohol), Xylene, ethyl acetate, and Methyl Ethyl Ketone (MEK).

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